CN117153802A - Series diode package assembly - Google Patents
Series diode package assembly Download PDFInfo
- Publication number
- CN117153802A CN117153802A CN202210542862.1A CN202210542862A CN117153802A CN 117153802 A CN117153802 A CN 117153802A CN 202210542862 A CN202210542862 A CN 202210542862A CN 117153802 A CN117153802 A CN 117153802A
- Authority
- CN
- China
- Prior art keywords
- diode
- frame
- chip
- package assembly
- tandem
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000011084 recovery Methods 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 230000000295 complement effect Effects 0.000 claims 1
- 238000004806 packaging method and process Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 4
- 230000000712 assembly Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49537—Plurality of lead frames mounted in one device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
The invention provides a serial diode packaging assembly, which comprises a plurality of bearing frames, a plurality of diode chips and a plurality of bridging frames. Each bearing frame is provided with a chip setting part or a bridging part, or a chip setting part and a bridging part bent at the chip setting part. Each diode chip is arranged on each chip setting part. Each bridging frame is bridged between two adjacent bearing frames, and two ends of each bridging frame are respectively connected with each diode chip and each bridging part to form a serial structure.
Description
Technical Field
The present invention relates to diode packages, and more particularly to a series diode package.
Background
Diode assemblies are often used in electronic circuits to perform rectification, voltage regulation, and loop protection. To be applied to a high voltage circuit, a plurality of diode assemblies may be connected in series in the circuit.
Disclosure of Invention
The inventors believe that the prior art manner of connecting multiple diodes in series in a circuit increases the complexity of the circuit, which is detrimental to an automated process.
In view of the drawbacks of the prior art, the inventors have devised a serial diode package assembly for high voltage circuits, which simplifies the applied circuits and facilitates an automated process.
To achieve the above and other objects, the present invention provides a serial diode package assembly, which comprises a plurality of carrying frames, a plurality of diode chips and a plurality of bridging frames. Each bearing frame is provided with a chip setting part or a bridging part, or a chip setting part and a bridging part bent at the chip setting part. Each diode chip is arranged on each chip arrangement part. Each bridging frame is bridged between two adjacent bearing frames, and two ends of each bridging frame are respectively connected with each diode chip and each bridging part to form a serial structure.
In embodiments, the load-bearing frames may include an inlet frame, an outlet frame, and at least one intermediate frame disposed between the inlet frame and the outlet frame.
In an embodiment, the inlet frame has only the chip set portion, the outlet frame has only the bridging portion, and the at least one intermediate frame may have the chip set portion and the bridging portion bent to the chip set portion.
In an embodiment, the at least one intermediate frame may be L-shaped and arranged complementarily to each other between the inlet frame and the outlet frame.
In an embodiment, the carrying frames arranged complementarily to each other may have at least one turn.
In an embodiment, the tandem diode package assembly may further include a package body. The package body covers the bearing frame, the diode chip and the bridging frame to form a package structure.
In an embodiment, each of the carrier frames may be provided with a pin protruding from the package.
In an embodiment, the crossover frames may be disposed parallel to each other.
In embodiments, the diode chip may comprise a silicon (Si) -based Schottky diode, a silicon carbide (SiC) Schottky diode, a gallium nitride (GaN) diode, a gallium arsenide (GaAs) diode, a fast recovery diode, or a general PN junction diode.
Therefore, the serial diode packaging assembly of the invention can be applied to a high-voltage circuit by connecting a plurality of diode chips in series through the bearing frame and the bridging frame, so that the applied circuit is simplified and is beneficial to an automatic process.
Drawings
FIG. 1 is a schematic top perspective view of a tandem diode package assembly according to an embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of a cross-over corresponding to the inlet frame, intermediate frame, diode chip, and cross-over frame of FIG. 1;
FIG. 3 is a schematic cross-sectional view of a bridge corresponding to the two intermediate frames, diode chips and bridge frame of FIG. 1;
FIG. 4 is a schematic cross-sectional view of the outlet frame, intermediate frame, diode chip and crossover frame of FIG. 1;
FIG. 5 is a schematic top view corresponding to FIG. 1;
fig. 6 is a schematic bottom view corresponding to fig. 1.
[ symbolic description ]
100. Series diode package assembly
101. Bearing frame
102. Diode chip
103. Bridging frame
104. Chip mounting part
105. Bridging part
106. Inlet frame
107. Outlet frame
108. Intermediate frame
109. Package body
110. Pin
Detailed Description
For a full understanding of the objects, features and effects of the present invention, reference should now be made to the following detailed description of the invention taken in conjunction with the accompanying drawings, in which:
referring to fig. 1 to 4, as shown in fig. 1, an embodiment of the invention provides a serial diode package assembly 100, which includes a plurality of conductive carrier frames 101, a plurality of diode chips 102 and a plurality of conductive bridge frames 103. Each of the carrier frames 101 has a chip mounting portion 104 or a bridging portion 105, or has a chip mounting portion 104 and a bridging portion 105 bent at the chip mounting portion 104. Each of the diode chips 102 is provided on each of the chip mounting portions 104. Each bridging frame 103 spans between two adjacent carrying frames 101. Both ends of each bridge frame 103 are respectively connected to each diode chip 102 and each bridge 105 to form a series structure. The diode chip 102 includes a silicon (Si) -based Schottky diode, a silicon carbide (SiC) Schottky diode, a gallium nitride (GaN) diode, a gallium arsenide (GaAs) diode, a fast recovery diode, and a general PN junction diode. However, the present invention is not limited thereto, and other types of diode chips may be used.
Therefore, the serial diode package assembly 100 according to the embodiment of the invention can be applied to a high voltage circuit (not shown) by connecting the plurality of diode chips 102 in series through the carrier frame 101 and the cross-over frame 103, so that the applied circuit is simplified and an automated process is facilitated.
As shown in fig. 1-4, in an embodiment, the load-bearing frame 101 may include an inlet frame 106, an outlet frame 107, and at least one intermediate frame 108 disposed between the inlet frame 106 and the outlet frame 107. The inlet frame 106 has only the chip set portion 104, and the outlet frame 107 has only the bridging portion 105. The at least one intermediate frame 108 may have the chip set portion 104 and the bridge portion 105 bent to the chip set portion 104. In fig. 1, the number of intermediate frames 108 is plural, and the intermediate frames 108 may be L-shaped and arranged complementarily to each other between the inlet frame 106 and the outlet frame 107, respectively, so that the formed tandem structure is integrated and the length of the bridging frame 103 is not excessively long to bridge two carrier frames 101, and fig. 1 includes one bridging frame 103 bridging between the inlet frame 106 and one intermediate frame 108, two bridging frames 103 bridging between three intermediate frames 108, and one bridging frame 103 bridging between one intermediate frame 108 and the outlet frame 107. The number of intermediate frames 108 shown in fig. 1 is three, but is not limited thereto. In the above configuration, the carrying frames 101 arranged complementarily to each other may have at least one turn, and the bridging frames 103 may be disposed parallel to each other. Both ends of each of the bridge frames 103 may be welded to one diode chip 102 and one bridge 105, respectively, but not limited thereto. The material of the load frame 101 and the crossover frame 103 may be copper or iron-nickel alloy.
As shown in fig. 1-6, in an embodiment, the tandem diode package assembly 100 may further include a package 109. The package 109 covers the carrier 101, the diode chip 102 and the bridge frame 103 to form a package structure. Each carrier 101 may have pins 110 protruding from the package 109 for electrically connecting to a circuit (not shown) on a circuit board (not shown) when the tandem diode package assembly 100 is mounted on the circuit board. As shown in fig. 5 and 6, both sides of the tandem diode package assembly 100 have a plurality of pins 110 protruding from the package 109. The package 109 may be an epoxy or other insulating packaging material.
The present invention has been disclosed in the foregoing in terms of preferred embodiments, however, it will be appreciated by those skilled in the art that the embodiments are merely illustrative of the present invention and should not be construed as limiting the scope of the invention. It should be noted that all changes and substitutions equivalent to the embodiment are intended to be included in the scope of the present invention. Accordingly, the scope of the invention is defined by the appended claims.
Claims (9)
1. A tandem diode package assembly, comprising:
the chip mounting device comprises a plurality of bearing frames, a plurality of supporting frames and a plurality of supporting frames, wherein each bearing frame is provided with a chip mounting part or a bridging part, or is provided with a chip mounting part and a bridging part bent at the chip mounting part;
a plurality of diode chips, each diode chip being disposed on each chip setting portion; and
and the two ends of each bridging frame are respectively connected with each diode chip and each bridging part so as to form a serial structure.
2. The tandem diode package assembly of claim 1, wherein the carrier frame includes an inlet frame, an outlet frame, and at least one intermediate frame disposed between the inlet frame and the outlet frame.
3. The tandem diode package assembly of claim 2, wherein the inlet frame has only the chip-mounting portion, the outlet frame has only the bridge portion, and the at least one intermediate frame has the chip-mounting portion and the bridge portion bent to the chip-mounting portion.
4. The tandem diode package assembly of claim 3, wherein the at least one intermediate frame is L-shaped and is arranged complementarily to each other between the inlet frame and the outlet frame.
5. The tandem diode package assembly of claim 4, wherein the carrier frames arranged complementary to each other have at least one turn.
6. The tandem diode package assembly of claim 1, further comprising a package covering the carrier, the diode chip, and the crossover frame to form a package structure.
7. The tandem diode package assembly of claim 6, wherein each of the carrier frames has leads protruding from the package body.
8. The tandem diode package assembly of claim 1, wherein the crossover frames are disposed parallel to one another.
9. The tandem diode package of claim 1, wherein the diode chip comprises a silicon (Si) based schottky diode, a silicon carbide (SiC) schottky diode, a gallium nitride (GaN) diode, a gallium arsenide (GaAs) diode, a fast recovery diode, or a general PN junction diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210542862.1A CN117153802A (en) | 2022-05-18 | 2022-05-18 | Series diode package assembly |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210542862.1A CN117153802A (en) | 2022-05-18 | 2022-05-18 | Series diode package assembly |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117153802A true CN117153802A (en) | 2023-12-01 |
Family
ID=88910577
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210542862.1A Pending CN117153802A (en) | 2022-05-18 | 2022-05-18 | Series diode package assembly |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117153802A (en) |
-
2022
- 2022-05-18 CN CN202210542862.1A patent/CN117153802A/en active Pending
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| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |