TWM627184U - Semiconductor package structure - Google Patents

Semiconductor package structure Download PDF

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TWM627184U
TWM627184U TW110210560U TW110210560U TWM627184U TW M627184 U TWM627184 U TW M627184U TW 110210560 U TW110210560 U TW 110210560U TW 110210560 U TW110210560 U TW 110210560U TW M627184 U TWM627184 U TW M627184U
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semiconductor chip
semiconductor
package body
package
package structure
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TW110210560U
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Chinese (zh)
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周文宗
陳義文
童義興
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立碁電子工業股份有限公司
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Publication of TWM627184U publication Critical patent/TWM627184U/en

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Abstract

本創作係揭露一種半導體封裝結構,其包括一基板、第一半導體晶片、第二半導體晶片及一封裝體,其中,第一半導體晶片與第二半導體晶片係電性佈設於基板上,又,封裝體完整包覆該等半導體晶片體,其中,第一半導體晶片可進一步用以控制該第二半導體晶片的作動與否。 The present invention discloses a semiconductor package structure, which includes a substrate, a first semiconductor chip, a second semiconductor chip, and a package, wherein the first semiconductor chip and the second semiconductor chip are electrically arranged on the substrate, and the package The body completely covers the semiconductor chip bodies, wherein the first semiconductor chip can be further used to control the action or not of the second semiconductor chip.

Description

半導體封裝結構 Semiconductor package structure

本新型創作係關於一種封裝結構,特別是關於一種半導體封裝結構。 The novel creation relates to a packaging structure, in particular to a semiconductor packaging structure.

隨著科技的發展,近年來應用於資訊、通訊、消費性電子產品之產品之開發亦朝向高密度、高性能以及輕、薄、短、小之趨勢,各態樣的半導體元件也因而配合推陳出新,例如是單一發光二極體(Light Emitted Diode,LED)、小信號電晶體、電阻器、電容器、電感器、或是金屬氧化物半導體場效電晶體(Metal-Oxide-Semiconductor Field-Effect Transistor,MOSFET)等被廣泛應用在各領域中,以期能符合輕薄短小與高密度的要求。目前電子裝置常見的技術手段,通常將各半導體元件封裝模組需事先以一個一個先封裝好的方式,再設置於印刷電路板上。另外,驅動電路板上之電晶體等元件也是需要先經過封裝才能設置於驅動電路板。如此一來,十分浪費一一封裝各個元件之成本,亦無法達成微小化,且目前常見的晶圓級晶片尺寸封裝(Wafer Level Chip Scale Package,WLCSP)製程其製作費用昂貴,若使用表面黏著技術(Surface Mount Technology,SMT)製程則需考量個元件是否可準確銲固以及是否達成微小化,承上所述,如何提供一種能夠解決上述問題之半導體封裝結構,正是當前的重要課題之一。 With the development of science and technology, the development of products used in information, communication and consumer electronic products in recent years has also moved towards the trend of high density, high performance, lightness, thinness, shortness and smallness. , such as a single light-emitting diode (Light Emitted Diode, LED), small signal transistors, resistors, capacitors, inductors, or metal-oxide-semiconductor field-effect transistors (Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET) and so on are widely used in various fields, in order to meet the requirements of light, thin, short and high density. A common technical means for electronic devices at present, usually, each semiconductor element packaging module needs to be packaged one by one in advance, and then arranged on the printed circuit board. In addition, components such as transistors on the driving circuit board also need to be packaged before being disposed on the driving circuit board. As a result, the cost of packaging each component is very wasteful, and miniaturization cannot be achieved, and the current common Wafer Level Chip Scale Package (WLCSP) process is expensive to manufacture. If the surface mount technology is used The (Surface Mount Technology, SMT) process needs to consider whether each component can be soldered accurately and whether it can achieve miniaturization. As mentioned above, how to provide a semiconductor packaging structure that can solve the above problems is one of the current important issues.

有鑑於上述課題,本新型創作是針對一種可將不同性質的半導體晶片封裝於同一封裝體中,以節省封裝製程成本之半導體封裝結構。 In view of the above problems, the present invention is directed to a semiconductor packaging structure that can package semiconductor chips of different properties in the same package to save packaging process costs.

根據本新型創作的實施例,本創作主要提供一種半導體封裝結構,其包括一基板、第一半導體晶片、第二半導體晶片及一封裝體,其中,基板具有一安裝面,第一半導體晶片與第二半導體晶片係設置於基板之安裝面上,又,封裝體完整包覆該等半導體晶片體,當第二半導體晶片至第一半導體晶片彼此電性連接後,第一半導體晶片可進一步用以控制該第二半導體晶片之開、關。 According to an embodiment of the present invention, the present invention mainly provides a semiconductor package structure, which includes a substrate, a first semiconductor chip, a second semiconductor chip, and a package, wherein the substrate has a mounting surface, and the first semiconductor chip and the first semiconductor chip have a mounting surface. The two semiconductor chips are arranged on the mounting surface of the substrate, and the package body completely covers the semiconductor chip bodies. After the second semiconductor chip and the first semiconductor chip are electrically connected to each other, the first semiconductor chip can be further used to control The opening and closing of the second semiconductor chip.

較佳地,該第一半導體晶片可為場效電晶體、金屬氧化物半導體場效電晶體。 Preferably, the first semiconductor wafer can be a field effect transistor or a metal oxide semiconductor field effect transistor.

較佳地,該第二半導體晶片可為發光二極體或雷射二極體。 Preferably, the second semiconductor chip can be a light emitting diode or a laser diode.

較佳地,該第二半導體晶片可堆疊於該第一半導體晶片上。 Preferably, the second semiconductor wafer can be stacked on the first semiconductor wafer.

較佳地,該安裝面上成型有一凹槽,該第一半導體晶片設置於該凹槽內。 Preferably, a groove is formed on the mounting surface, and the first semiconductor chip is disposed in the groove.

承上所述,因依據本新型創作之半導體封裝結構,係將第一半導體晶片與第二半導體晶片分別設置於基板,更使其位於同一封裝體內,與習知技術相較,係可降低封裝製程之成本並同時達到節省空間。 Based on the above, the first semiconductor chip and the second semiconductor chip are respectively disposed on the substrate according to the semiconductor package structure created in the present invention, and are further located in the same package body. Compared with the prior art, the package size can be reduced. Process cost and space saving at the same time.

綜上所述,本創作將以特定實施例詳述於下,以下實施例僅為舉例之用,而非限定本創作之保護範圍。熟諳此技藝者,將可輕易理解各種非關鍵參數,其可改變或調整而產生實質相同的 結果。 To sum up, the present creation will be described in detail below with specific embodiments, and the following embodiments are for illustrative purposes only, and do not limit the protection scope of the present creation. Those skilled in the art will readily understand that various non-critical parameters can be varied or adjusted to produce substantially the same result.

10:半導體封裝結構 10: Semiconductor packaging structure

101:基板 101: Substrate

1011:安裝面 1011: Mounting Surface

1012:凹槽 1012: Groove

102:第一半導體晶片 102: First semiconductor wafer

103:第二半導體晶片 103: Second semiconductor wafer

104:封裝體 104: Package body

1041:第一封裝體 1041: The first package body

1042:第二封裝體 1042: the second package

1043:出光面 1043: light-emitting surface

圖1,為本新型創作之半導體封裝結構示意圖(一)。 Figure 1 is a schematic diagram (1) of the semiconductor package structure of this novel creation.

圖2,為本新型創作之半導體封裝結構示意圖(二)。 FIG. 2 is a schematic diagram (2) of the semiconductor package structure of this novel creation.

圖3,為本新型創作之一實施例的半導體封裝結構的示意圖。 FIG. 3 is a schematic diagram of a semiconductor package structure according to an embodiment of the novel invention.

圖4,為本新型創作之另一實施例的半導體封裝結構的示意圖。 FIG. 4 is a schematic diagram of a semiconductor package structure according to another embodiment of the novel invention.

有關本新型創作之前述及其他技術內容、特點與功效,在以下配合參考圖式之各實施例的詳細說明中,將可清楚的呈現。以下實施例中所提到的方向用語,例如:「上」、「下」、「前」、「後」、「左」、「右」等,僅是參考附加圖式的方向。因此,使用的方向用語是用來說明,而並非用來限制本新型創作。並且,在下列各實施例中,相同或相似的元件將採用相同或相似的標號。 The aforementioned and other technical contents, features and effects of the novel creation will be clearly presented in the following detailed description of each embodiment with reference to the drawings. The directional terms mentioned in the following embodiments, such as "up", "down", "front", "rear", "left", "right", etc., only refer to the directions of the attached drawings. Therefore, the directional terms used are intended to illustrate, rather than limit, the present invention. Also, in the following embodiments, the same or similar elements will be given the same or similar reference numerals.

以下將參照相關圖式,說明依本創作較佳實施例之半導體封裝結構,其中相同的元件將以相同的參照符號加以說明。請同時參照圖1與圖2所示,為本新型創作之半導體封裝結構示意圖(一)、(二),半導體封裝結構10包含一基板101、一第一半導體晶片102、第二半導體晶片103以及一封裝體104,其中,第一半導體晶片102與第二半導體晶片103係位於同一封裝體104內,於本實施例中,基板101並無限制,該基板101可為印刷電路板、金屬基板、陶瓷基板、石英基板、藍寶石基板或玻纖基板(如FR-4、FR-5、G-10、G-11等),在本實施例中之基板101係選用輕薄的印刷電路板製作, 在基板101之安裝面1011上鋪設有一線路層(未繪製),而封裝體104之材質為一透明或透光材質,例如透明的環氧樹脂(epoxy resin)、壓克力樹脂,或矽膠(silicone)等,不以此為限,在本實施例中所述之第一半導體晶片102,可為一場效應電晶體、金屬氧化物半導體場效電晶體、接面場效電晶體等,但不以此為限,又,在本實施例中,所述之第二半導體晶片103係可以包含一III-V族化合物半導體或一II-VI族化合物半導體,例如:包含氮化鎵(GaN)、氮化銦(InN)、氮化鋁(AlN)、氮化銦鎵(InGaN)、氮化鋁鎵(AlGaN)、氮化鋁銦鎵(InAlGaN)、氮化鋁銦(AlInN)、砷化鋁鎵(AlGaAs)、砷化銦鎵(InGaAs)、砷化鋁銦鎵(AlInGaAs)、磷化鎵(GaP)、磷化鋁鎵(AlGaP)、磷化銦鎵(InGaP)、磷化鋁銦鎵(AlInGaP)或磷化銦(InP)其中至少一項,並以晶片或晶粒(裸晶,die)的形式,直接設置於基板101上,又,第二半導體晶片103與第一半導體晶片102透過打線方式(bonding wire)相互電性連接並設置於基板101之安裝面1011上,所述的打線方式可以使用金線、銅線、導電合金線或是其他導電性佳且不易產生氧化或化學作用的金屬線以連接方式相互導通,進而使第一半導體晶片102可控制第二半導體晶片103的作動與否,在本實施例中半導體封裝結構10受一外部電力導通後,當一外部訊號控制該第一半導體晶片102呈「開啟狀態」時,使其電流可經過第二半導體晶片103,進而讓半導體封裝結構10呈現發光狀態,反之,當第一半導體晶片102呈「關閉狀態」時,其電流無法經過第二半導體晶片103,進而讓半導體封裝結構10呈現不發光狀態,透過上述方式,可將不同性質的半導體晶片設置於同一封裝體上,進而改善習知需各自將單一元件設置於電路板,藉此達成微小化。 The semiconductor package structure according to the preferred embodiment of the present invention will be described below with reference to the related drawings, wherein the same components will be described with the same reference symbols. Please refer to FIG. 1 and FIG. 2 at the same time, which are schematic diagrams (1) and (2) of the semiconductor package structure of the novel creation. The semiconductor package structure 10 includes a substrate 101 , a first semiconductor chip 102 , a second semiconductor chip 103 and A package body 104, wherein the first semiconductor chip 102 and the second semiconductor chip 103 are located in the same package body 104. In this embodiment, the substrate 101 is not limited, and the substrate 101 can be a printed circuit board, a metal substrate, Ceramic substrate, quartz substrate, sapphire substrate or glass fiber substrate (such as FR-4, FR-5, G-10, G-11, etc.), in this embodiment, the substrate 101 is made of a thin and light printed circuit board, A circuit layer (not shown) is laid on the mounting surface 1011 of the substrate 101 , and the package body 104 is made of a transparent or light-transmitting material, such as transparent epoxy resin, acrylic resin, or silicone ( silicone), etc., not limited to this, the first semiconductor chip 102 described in this embodiment can be a field effect transistor, a metal oxide semiconductor field effect transistor, a junction field effect transistor, etc., but not Limited to this, and in this embodiment, the second semiconductor chip 103 may include a III-V group compound semiconductor or a II-VI group compound semiconductor, such as gallium nitride (GaN), Indium Nitride (InN), Aluminum Nitride (AlN), Indium Gallium Nitride (InGaN), Aluminum Gallium Nitride (AlGaN), Aluminum Indium Gallium Nitride (InAlGaN), Aluminum Indium Nitride (AlInN), Aluminum Arsenide Gallium (AlGaAs), Indium Gallium Arsenide (InGaAs), Aluminum Indium Gallium Arsenide (AlInGaAs), Gallium Phosphide (GaP), Aluminum Gallium Phosphide (AlGaP), Indium Gallium Phosphide (InGaP), Aluminum Indium Gallium Phosphide At least one of (AlInGaP) or indium phosphide (InP) is directly disposed on the substrate 101 in the form of a wafer or a crystal grain (die), and the second semiconductor wafer 103 and the first semiconductor wafer 102 They are electrically connected to each other and disposed on the mounting surface 1011 of the substrate 101 through bonding wires. The bonding methods can use gold wires, copper wires, conductive alloy wires or other wires with good conductivity and are not easy to produce oxidation or chemical reactions. The active metal wires are connected to each other in a connection manner, so that the first semiconductor chip 102 can control the action of the second semiconductor chip 103. In this embodiment, after the semiconductor package structure 10 is turned on by an external power, when an external signal controls When the first semiconductor chip 102 is in the "on state", the current can pass through the second semiconductor chip 103, so that the semiconductor package structure 10 is in a light-emitting state. On the contrary, when the first semiconductor chip 102 is in the "off state", its The current cannot pass through the second semiconductor chip 103, so that the semiconductor package structure 10 exhibits a non-luminous state. Through the above method, semiconductor chips with different properties can be arranged on the same package, thereby improving the conventional one that requires a single element to be arranged in the circuit. board, thereby achieving miniaturization.

請接續參照圖3所示,為本新型創作之一實施例的半導體封 裝結構的示意圖,基板101之一安裝面1011成型有一凹槽1012,第一半導體晶片102係電性連接設置於凹槽1012內,而第二半導體晶片103係堆疊設置於第一半導體晶片102上,且相互電性連接,又,封裝體104設置於基板101上覆蓋至少部分之線路層(未繪製),且完整包覆所述之第一半導體晶片102與第二半導體晶片103,如圖所示,當第二半導體晶片103係堆疊設置於第一半導體晶片102上時,不僅可縮減基板101之面積,且可避免第二半導體晶片103所發射之光線被遮蔽,進而提升出光效率,較佳地,透過上述堆疊方式,可使基板101的尺寸低於1毫米乘以1毫米的範圍內。 Please continue to refer to FIG. 3 , which is a semiconductor package according to an embodiment of the new invention. A schematic diagram of the mounting structure, a mounting surface 1011 of the substrate 101 is formed with a groove 1012 , the first semiconductor chip 102 is electrically connected and disposed in the groove 1012 , and the second semiconductor chip 103 is stacked on the first semiconductor chip 102 , and are electrically connected to each other, and the package body 104 is disposed on the substrate 101 to cover at least part of the circuit layer (not shown), and completely encapsulate the first semiconductor chip 102 and the second semiconductor chip 103, as shown in the figure As shown, when the second semiconductor chip 103 is stacked on the first semiconductor chip 102, not only the area of the substrate 101 can be reduced, but also the light emitted by the second semiconductor chip 103 can be prevented from being shielded, thereby improving the light extraction efficiency. In addition, through the above-mentioned stacking method, the size of the substrate 101 can be made smaller than the range of 1 millimeter by 1 millimeter.

請接續參照圖4所示,為本新型創作之另一實施例的半導體封裝結構的示意圖,基板101之一安裝面1011成型有一凹槽1012,第一半導體晶片102係電性連接設置於凹槽1012內,而第二半導體晶片103係堆疊設置於第一半導體晶片102上並相互電性連接,相較於上述實施例,本實施例不同之處在於:封裝體104包含第一封裝體1041及第二封裝體1042,其中,第一封裝體1041用以包覆第一半導體晶片102,第二封裝體1042用以包覆第二半導體晶片103,具體而言,當第一半導體晶片102設置於凹槽1012內後,第一封裝體1041將包覆封裝該第一半導體晶片102,並填滿該凹槽1012,進一步而言,第一封裝體1041之高度需高於該基板101之安裝面1011,較佳地,第一封裝體1041之高度與該安裝面1011之差距低於0.5毫米,又,第二半導體晶片103設置於第一封裝體1041上,第二封裝體1042再包覆封裝該第二半導體晶片103及其覆蓋至少部分電路層,如圖所示,所述之第一封裝體1041為一透光或非透光材質,且第二封裝體1042為一透光材質,當第一封裝體1041為非透光材質時,可避免第二半導體晶片103所發射之光線被 影響,且該第一封裝體1041之折射率與該第二封裝體1042之折射率的差值小於0.2,較佳地,兩者折射率的差值介於0.01~0.1,此外,在本實施例中,第二封裝體1042的表面可為一出光面1043,且該出光面1043可為球面、非球面、弧形面、拋物面、雙曲面或自由曲面。 Please continue to refer to FIG. 4 , which is a schematic diagram of a semiconductor package structure according to another embodiment of the novel invention. A mounting surface 1011 of the substrate 101 is formed with a groove 1012 , and the first semiconductor chip 102 is electrically connected to the groove. In 1012 , the second semiconductor chip 103 is stacked on the first semiconductor chip 102 and is electrically connected to each other. Compared with the above-mentioned embodiment, this embodiment is different in that the package body 104 includes the first package body 1041 and the The second package body 1042, wherein the first package body 1041 is used to cover the first semiconductor chip 102, and the second package body 1042 is used to cover the second semiconductor chip 103. Specifically, when the first semiconductor chip 102 is disposed on the After entering the groove 1012 , the first package body 1041 will encapsulate the first semiconductor chip 102 and fill the groove 1012 . Further, the height of the first package body 1041 needs to be higher than the mounting surface of the substrate 101 . 1011, preferably, the height of the first package body 1041 and the distance between the mounting surface 1011 are less than 0.5 mm, and the second semiconductor chip 103 is disposed on the first package body 1041, and the second package body 1042 is then encapsulated and packaged The second semiconductor chip 103 and its covering at least part of the circuit layer, as shown in the figure, the first package body 1041 is made of a light-transmitting or non-light-transmitting material, and the second package body 1042 is a light-transmitting material. When the first package body 1041 is made of a non-translucent material, the light emitted by the second semiconductor chip 103 can be prevented from being damaged. influence, and the difference between the refractive index of the first package body 1041 and the refractive index of the second package body 1042 is less than 0.2, preferably, the difference between the refractive indexes of the two is between 0.01 and 0.1. For example, the surface of the second package body 1042 may be a light emitting surface 1043, and the light emitting surface 1043 may be a spherical surface, an aspherical surface, an arcuate surface, a paraboloid, a hyperboloid or a free-form surface.

雖然本新型創作已以實施例揭露如上,然其並非用以限定本新型創作,任何所屬技術領域中具有通常知識者,在不脫離本新型創作的精神和範圍內,當可作些許的更動與潤飾,故本新型創作的保護範圍當視後附的申請專利範圍所界定者為準。 Although the present invention has been disclosed above with examples, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field may make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the new creation should be determined by the scope of the appended patent application.

10:半導體封裝結構 10: Semiconductor packaging structure

101:基板 101: Substrate

102:第一半導體晶片 102: First semiconductor wafer

103:第二半導體晶片 103: Second semiconductor wafer

104:封裝體 104: Package body

Claims (10)

一種半導體封裝結構,其包括: A semiconductor packaging structure, comprising: 一基板,其中一面形成有一安裝面; a base plate, one side of which is formed with a mounting surface; 一第一半導體晶片,電性佈設於該安裝面上; a first semiconductor chip electrically arranged on the mounting surface; 一第二半導體晶片,電性佈設於該安裝面上,與該第一半導體晶片呈電性連接;以及 a second semiconductor chip electrically disposed on the mounting surface and electrically connected to the first semiconductor chip; and 一封裝體,將該第一半導體晶片及該第二半導體晶片完整包覆; a package body that completely covers the first semiconductor chip and the second semiconductor chip; 其中,該第一半導體晶片用以同步控制該第二半導體晶片的作動與否。 Wherein, the first semiconductor chip is used for synchronously controlling the action of the second semiconductor chip. 如請求項1所述之半導體封裝結構,其中,該第一半導體晶片與該第二半導體晶片呈串聯導通。 The semiconductor package structure of claim 1, wherein the first semiconductor chip and the second semiconductor chip are connected in series. 如請求項2所述之半導體封裝結構,其中,該第一半導體晶片為金屬氧化物半導體場效電晶體,該第二半導體晶片為發光二極體晶片。 The semiconductor package structure of claim 2, wherein the first semiconductor chip is a metal oxide semiconductor field effect transistor, and the second semiconductor chip is a light emitting diode chip. 一種半導體封裝結構,其包括: A semiconductor packaging structure, comprising: 一基板,其中一安裝面形成有一凹槽; a base plate, wherein a mounting surface is formed with a groove; 一第一半導體晶片,電性佈設於該凹槽; a first semiconductor chip electrically arranged in the groove; 一第二半導體晶片,與該第一半導體晶片呈電性連接;以及 a second semiconductor chip electrically connected to the first semiconductor chip; and 一封裝體,將該第一半導體晶片及第二半導體晶片完整包覆; a package body, which completely wraps the first semiconductor chip and the second semiconductor chip; 其中,該第一半導體晶片用以控制該第二半導體晶片的作動與否。 Wherein, the first semiconductor chip is used to control the action or not of the second semiconductor chip. 如請求項4所述之半導體封裝結構,其中,該第一半導體晶片與該第二半導體晶片呈串聯導通。 The semiconductor package structure of claim 4, wherein the first semiconductor chip and the second semiconductor chip are connected in series. 如請求項5所述之半導體封裝結構,其中,該第一半導體晶片為金屬氧化物半導體場效電晶體,該第二半導體晶片為發光二極體晶片。 The semiconductor package structure of claim 5, wherein the first semiconductor chip is a metal oxide semiconductor field effect transistor, and the second semiconductor chip is a light emitting diode chip. 如請求項4所述之半導體封裝結構,其中,該封裝體更包括一第一封裝體及一第二封裝體,該第一封裝體用以包覆該第一半導體晶片,該第二封裝體用以包覆該第二半導體晶片。 The semiconductor package structure according to claim 4, wherein the package body further comprises a first package body and a second package body, the first package body is used to encapsulate the first semiconductor chip, and the second package body for wrapping the second semiconductor chip. 如請求項7所述之半導體封裝結構,其中,該第一封裝體的高度高於該安裝面。 The semiconductor package structure of claim 7, wherein the height of the first package body is higher than the mounting surface. 如請求項8所述之半導體封裝結構,其中,該第一封裝體之折射率與該第二封裝體之折射率的差值小於0.2。 The semiconductor package structure of claim 8, wherein the difference between the refractive index of the first package body and the refractive index of the second package body is less than 0.2. 如請求項8所述之半導體封裝結構,其中,該第一封裝體可為一透光或不透光材質。 The semiconductor package structure of claim 8, wherein the first package body can be a light-transmitting or opaque material.
TW110210560U 2021-09-06 2021-09-06 Semiconductor package structure TWM627184U (en)

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