TWM626936U - Dual e-type hall magnetic device - Google Patents

Abstract

A dual E-type Hall magnetic device is disclosed. Two E-type deep planting layers are implemented on a semiconductor substrate as a carrier layer for current conduction. The first and second E-type deep planting layers are located mirrorly facings; and that a plurality of planting layers, which are surrounded by N-well in different deep planting layers, are used to establish those magnetic sensors. Next, a plurality of conductor pads are implemented to connected to the deep planting layers electrically. The proposed magnetic device allows the bias current passed through the conductor pads and the channels to form a vertical current path and to sense the different axial magnetic field. Note that the sensing planes are generated according to the different process depth between the deep planting layers and the surface planting layers. The proposed topology not only improves the sensing sensitivity but also enhances the convenience of circuit integration.

Description

Double E-type Hall magnetic field sensing element

The present invention relates to a Hall magnetic field sensing element, especially a double E-type Hall magnetic field sensing element.

In recent years, with the vigorous development of semiconductor manufacturing process, the miniaturization and integration of various electronic components is no longer a dream.

Generally speaking, the traditional Hall magnetic field sensing element is mainly based on the principle of Lorentz force. The principle is that when an external current is applied along the horizontal axis, a Hall voltage will be generated between the vertical axes, and its voltage will change with the thickness, cross-sectional area, applied current and magnetic field of the Hall magnetic field sensing element. . If a smaller magnetic field is to be sensed, it can be achieved by increasing the applied current, changing the thickness, or changing the carrier concentration. At present, most of the Hall magnetic field sensing elements on the market are made of Bipolar Junction Transistor (BJT) technology or magnetic materials. The readout circuit and the signal processing circuit cannot be combined, so they need to be manufactured separately. This will lead to disadvantages such as increased manufacturing cost and increased product volume. On the other hand, since the output signal of the Hall magnetic field sensing element is usually small, low input offset voltage and low noise characteristics are required. Therefore, how to effectively reduce the volume and increase the convenience of the integrated circuit has become one of the problems that manufacturers are eager to solve.

To sum up, it can be seen that the problems of poor sensing sensitivity and inconvenient circuit integration have always existed in the prior art. Therefore, it is necessary to propose an improved technical means to solve this problem.

First, the present invention discloses a double E-type Hall magnetic field sensing device, which is fabricated by a standard complementary metal-oxide-semiconductor (CMOS) process. The device includes a semiconductor substrate, two E-type deep layers An implant layer, a plurality of conductor pads and a current blocking layer. Wherein, the E-type deep implantation layer is disposed on the semiconductor substrate as a carrier layer for current conduction, and the E-type deep implantation layer includes a first E-type deep implantation layer and a second E-type deep implantation layer, The position of the first E-type deep implantation layer and the position of the second E-type deep implantation layer are in a mirroring relationship with the mirror axis; each conductor pad includes a shallow implantation layer and an N-type well area ( N-well), the conductor pads are respectively arranged on the upper surfaces of the first E-type deep implantation layer and the second E-type deep implantation layer in a mirrored relationship with a mirror axis, and allow current to pass through the conductor pads The current path is formed by the wires connected in the middle of the E-type deep implantation layer; the current blocking layer covers the first E-type deep implantation layer and the second E-type deep implantation layer with a Guard Ring structure to block the current and improve the magnetic field. sensitivity.

The elements disclosed in the present invention are as above, and the difference from the prior art is that the present invention uses a first E-type deep implant layer and a second E-type deep implant layer on a semiconductor substrate to serve as a carrier layer for current conduction, wherein, The position of the first E-type deep implantation layer and the position of the second E-type deep implantation layer are in a mirroring relationship with the mirror axis, and then a plurality of conductors including the N-type well area and the shallow implantation layer are connected. The pads are respectively arranged on the upper surfaces of the first E-type deep implantation layer and the second E-type deep implantation layer and are in a mirrored relationship with the mirror axis, and then cover the first E-type deep implantation layer and the second E-type deep implantation layer with a protection ring. The E-type deep implant layer acts as a current blocking layer to block current and improve magnetic sensitivity.

Through the above-mentioned technical means, the present invention can achieve the technical effect of improving the sensitivity of magnetic field sensing and the convenience of circuit integration.

The following will describe the implementation of the present creation in detail with the drawings and examples, so as to fully understand and implement the implementation process of how to apply technical means to solve technical problems and achieve technical effects in the present creation.

Before describing the double E-type Hall magnetic field sensing element disclosed in this creation, the mesh points of this creation drawing will be explained first. In actual implementation, in order to simplify the description and simplify the drawing, the same mesh point is used in this creation drawing. or symbol to represent the same element, material or structure.

The following diagrams are used to further describe the dual E-type Hall magnetic field sensing element of this creation. Please refer to "Figure 1" first. "FIG. 1" is a schematic diagram of a first embodiment of creating a double-E-type Hall magnetic field sensing device. The double-E-type Hall magnetic field sensing device 100 is fabricated by a standard CMOS process, and its components include: semiconductor The substrate 110 , two E-type deep implant layers ( 111 , 112 ), a plurality of conductor pads 120 and a current blocking layer 130 . The E-type deep implantation layers (111, 112) are disposed on the semiconductor substrate 110 as a carrier layer for current conduction, wherein the E-type deep implantation layers (111, 112) include a first E-type deep implantation In the layer 111 and the second E-type deep implant layer 112 , the position of the first E-type deep implant layer 111 and the position of the second E-type deep implant layer 112 are in a mirroring relationship with the mirror axis 113 . In practical implementation, the corners of the E-type deep implant layers (111, 112) are the R angles, which are used to reduce the probability that the carriers are deflected and hit the implant layers when the current is intervened by the magnetic field. The R angle radius can be 1.8μm. In addition, the E-type deep implant layers ( 111 , 112 ) are made of polysilicon Hall planes, and the current blocking layers 130 are covered thereon. In fact, the width of the E-type deep implantation layer (111, 112) can be selected from 15 μm to 30 μm, respectively, and the first E-type deep implantation layer 111 and the second E-type deep implantation layer 112 respectively includes three protruding portions 140 parallel to each other, and the length of the protruding portions 140 minus the width of the conductor pads 120 is between 0 μm and 30 μm. In addition, the E-type deep implantation layers (111, 112) are N-type well area (N-well) implantation layers, T-well implantation layers and P-well area (P-well) distribution layers At least one of the implanted layers, when the E-type deep implanted layers (111, 112) are N-well implanted layers or T-well implanted layers, the current blocking layer 130 is a P+ barrier layer and a P+ guard ring structure, When the E-type deep implant layers ( 111 , 112 ) are P-well implant layers, the current blocking layer 130 is an N+ blocking layer and an N+ guard ring structure.

A plurality of conductor pads 120, each conductor pad 120 includes a shallow implantation layer 121 and an N-type well region 122, the conductor pads 120 are respectively disposed on the first E-type deep implantation layer 111 and the second E-type deep implantation layer 120 The upper surface of the E-type deep implantation layer 112 is in a mirrored relationship with the mirror axis 113, and the conductors (151, 152) that allow current to pass through the middle of the E-type deep implantation layer (111, 112) through the conductor pads 120 are connected. ) form the current path. In practical implementation, the conductor pad 120 includes a bias current source input terminal (I _bias + ), a bias current source output terminal (I _bias − ), a first voltage sensing terminal (V _H1 ) and a second voltage Sensing end (V _H2 ), the conductor pad 120 is an N+ implant layer, and the length and width are respectively selected from 15 μm to 30 μm, the wires ( 151 , 152 ) are conductive wires (eg: metal wire). In addition, the length of the current path can also be selected from 15 μm to 30 μm.

The current blocking layer 130 covers the first E-type deep implant layer 111 and the second E-type deep implant layer 112 with a guard ring structure to block current and improve magnetic sensitivity. In practice, the current blocking layer 130 is a P+ barrier layer, an N+ barrier layer, an N-well implant layer, a T-well implant layer, and a P-well implant layer at least one of the layers.

It should be noted that the double-E-type Hall magnetic field sensing element 100 in “FIG. 1” is arranged in a standard size (or referred to as code name: F30_31.8) structure, and is implemented in a square structure. Among them, "30" and "31.8" represent 30μm and 31.8μm respectively (ie: 30μm plus R corner radius of 1.8μm). In actual implementation, three more specifications can be extended based on the standard size. The first extension specification (or code name for short: F15_16.8), its width and side length are reduced to half, the R corner radius is 1.8μm unchanged; the second extension specification (or code name for short: F30_1.8), It maintains the conductor pad width of 30μm, cancels the 30μm side length, and only retains the R corner radius of 1.8μm; the third extension specification (or simply called code: F15_1.8), its conductor pad width is 15μm, and the additional side length is only 1.8μm. Retain the R angle radius of 1.8μm, and the following three specifications will be explained with the drawings.

Please refer to “FIG. 2”, “FIG. 2” is a schematic diagram of a second embodiment of creating a double E-type Hall magnetic field sensing device. In this embodiment, the double-E-type Hall magnetic field sensing element 200 (the specification of which is code: F15_16.8) is similar to the double-E-type Hall magnetic field sensing element 100 shown in "Fig. 1". The drawings and descriptions are simplified, and the same parts will not be repeated. The difference between the two is that the length of the protrusion minus the width of the conductor pad is set at 15 μm, and the width of the E-type deep implantation layer is indicated in the lower left. The same is 15 μm, which is different from the double E-type Hall magnetic field sensing element 100 shown in “FIG. 1”, which is 30 μm.

Please refer to “FIG. 3”, “FIG. 3” is a schematic diagram of a third embodiment of creating a double E-type Hall magnetic field sensing device. In this embodiment, the specification of the double-E-type Hall magnetic field sensing element 300 is code: F30_1.8, which is similar to the double-E-type Hall magnetic field sensing element 100 shown in “FIG. 1”. The drawings and descriptions are simplified, and the same parts will not be repeated. The difference between the two is that the length of the protrusion minus the width of the conductor pad is set at 1.8μm, that is, only the R corner radius is left. As for the E type The width of the deep implantation layer is indicated on the lower left, which is the same as the double E-type Hall magnetic field sensing element 100 shown in "Fig. 1", which is 30 μm.

Please refer to "FIG. 4". "FIG. 4" is a schematic diagram of a fourth embodiment of creating a double E-type Hall magnetic field sensing device. In this embodiment, the specification of the double-E-type Hall magnetic field sensing element 400 is code: F15_1.8, which is similar to the double-E-type Hall magnetic field sensing element 300 shown in FIG. The drawings and descriptions are simplified, the same parts will not be repeated, and the difference between the two is that the width of the E-type deep implantation layer of the double E-type Hall magnetic field sensing element 400 is marked as 15 μm in the lower left. 30 μm of the double E-type Hall magnetic field sensing element 300 shown in “FIG. 3”.

In practice, the dual E-type Hall magnetic field sensing elements (100, 200, 300 and 400) are implanted using the process technology and specifications of "UMC 0.18 UM Mixed-Mode and RFCMOS 1.8V/3.3V 1P6M Metal Capacitor Process" Layer design to form a one-dimensional double E-type Hall magnetic field sensing element based on the magnetoresistance effect (Magnetoresistance, MR) in the vertical direction of the Z axis. It should be added that three implantation structures can be used in the above four embodiments: (1) The N-type well area is covered with the P+ implantation layer as the barrier layer, the N-well implantation layer is used as the current conduction carrier, and the N+ implantation layer is used as the current conduction carrier. The implantation layer is used as a conductor pad connecting the N-well implantation layer, and the current blocking layer (or isolation layer) of the P+ guard ring is used as the insulation between the components to block the current blocking layer; (2) T-well cloth is used. The implanted layer covers the P+ implanted layer as a barrier layer, and the N+ implanted layer is used as the conductor pad connecting the N-well implanted layer. The insulation between the components also uses the current blocking layer of the P+ guard ring structure as the current blocking layer. (3) The N+ implantation layer is covered with a P-type well region (P-well) as a barrier layer, which uses the P-well implantation layer as a current conduction carrier and N+ as a current blocking layer.

Next, in the constant voltage measurement of the planar Hall magnetic field sensing element, on the basis of the measurement results of the magnetic field change in the Z-axis direction perpendicular to the semiconductor substrate under the constant voltage of 1.8V and 3.3V, The constant voltage measurement parameters of the two are shown in Table 1 and Table 2 respectively:

Table 1: Comparison of 1.8V constant voltage measurement parameters of dual E-type Hall magnetic field sensing elements Magnetic field sensing element code Voltage Sensitivity (S _RV ) (V/VT) Current Sensitivity (S _RI ) (V/AT) Linearity error (Lin+) (%) Symmetry Error (Sym) (%) F30_31.8 170.8 1459.58 3.009/1.338 1.998 F30_1.8 129.11 535.09 1.733/1.374 -0.294 F15_16.8 152.11 1290.62 1.742/1.377 -0.345 F15_1.8 109.6 412.52 1.998/1.398 -0.47 F15_1.8P 58.33 109.49 1618/1.487 -0.192

Table 2: Comparison of 3.3V constant voltage measurement parameters of dual E-type Hall magnetic field sensing elements Magnetic field sensing element code Voltage Sensitivity (S _RV ) (V/VT) Current Sensitivity (S _RI ) (V/AT) Linearity error (Lin+) (%) Symmetry Error (Sym) (%) F30_31.8 93.38 786.5 1.793/1.364 -0.353 F30_1.8 69.92 281.79 1.759/1.358 -0.27 F15_16.8 82.69 685.03 1.752/1.366 -0.354 F15_1.8 61.5 241.4 1743/1.395 -0.228 F15_1.8P 28.3 55.7 -4.033/2.944 -2.747

Table 1 and Table 2 above are the comparison of the measurement parameters of 1.8V and 3.3V constant voltage respectively. In the five specifications of the planar structure ("F15_1.8P" is the structure of parallel "F15_1.8"), the magnetic field sensing The current sensitivity of the component codes "F30_31.8" and "F15_16.8" is the best, and the code "F15_16.8" occupies the smallest area, and the linearity error and symmetry error are more prominent. In addition, compared with the difference in operating voltage, increasing the voltage from 1.8V to 3.3V not only did not improve the voltage sensitivity and current sensitivity, but even greatly reduced the sensitivity.

To sum up, it can be seen that the difference between the present invention and the prior art is that the first E-type deep implantation layer and the second E-type deep implantation layer are provided on the semiconductor substrate as the carrier layer for current conduction, wherein the first E-type deep implantation layer and the second E-type deep implantation layer are arranged on the semiconductor substrate. The position of an E-type deep implant layer and the position of the second E-type deep implant layer are in a mirrored relationship with a mirror axis, and then a plurality of conductor pads including the N-type well area and the shallow implant layer are connected They are respectively arranged on the upper surfaces of the first E-type deep implantation layer and the second E-type deep implantation layer and in a mirroring relationship with the mirror axis, and then cover the first E-type deep implantation layer and the second E-type deep implantation layer with a protection ring The deep implanted layer acts as a current blocking layer to block current and improve magnetic sensitivity. By this technical means, the problems existing in the prior art can be solved, thereby achieving the technical effect of improving magnetic field sensing sensitivity and convenience of circuit integration.

Although this creation is disclosed in the above-mentioned embodiments, it is not intended to limit this creation. Anyone who is familiar with the similar arts can make some changes and modifications without departing from the spirit and scope of this creation. The scope of patent protection shall be determined by the scope of the patent application attached to this specification.

100, 200, 300, 400: Double E-type Hall magnetic field sensing element 110: Semiconductor substrate 111,112: E-type deep implantation layer 113: Mirror axis 120: Conductor pads 121: Shallow Implant Layer 122: N-type well area 130: Current blocking layer 140: Protrusion 151, 152: Wire

FIG. 1 is a schematic diagram of a first embodiment of creating a double E-type Hall magnetic field sensing device. FIG. 2 is a schematic diagram of a second embodiment of creating a double E-type Hall magnetic field sensing device. FIG. 3 is a schematic diagram of a third embodiment of creating a double E-type Hall magnetic field sensing device. FIG. 4 is a schematic diagram of a fourth embodiment of creating a double E-type Hall magnetic field sensing device.

100: Double E-type Hall magnetic field sensing element

110: Semiconductor substrate

111,112: E-type deep implantation layer

113: Mirror axis

120: Conductor pads

121: Shallow Implant Layer

122: N-type well area

130: Current blocking layer

140: Protrusion

151, 152: Wire

Claims (10)

A double E-type Hall magnetic field sensing element is fabricated by standard CMOS process, and the element includes: a semiconductor substrate; Two E-type deep implant layers are disposed on the semiconductor substrate as carrier layers for current conduction, wherein the E-type deep implant layers include a first E-type deep implant layer and a second E-type deep implant layer implantation layer, the position of the first E-type deep implantation layer and the position of the second E-type deep implantation layer are in a mirrored relationship with a mirror axis; A plurality of conductor pads, each conductor pad includes a shallow implantation layer and an N-well region (N-well), the conductor pads are respectively arranged on the first E-type deep implantation layer and the The upper surface of the second E-type deep implant layer is in a mirrored relationship with the mirror axis, and allows current to form a current path through the conductor pads through the wires connected in the middle of the E-type deep implant layer; and a current blocking layer covering the first E-type deep implant layer and the second E-type deep implant layer with a guard ring structure to block current and improve magnetic sensitivity. The double E-type Hall magnetic field sensing element according to claim 1, wherein the rotation angle of the E-type deep implant layer is an R angle, which is used to reduce the probability that the carriers are deflected and hit the implant layer when the current is intervened by the magnetic field . The double E-type Hall magnetic field sensing element according to claim 2, wherein the R corner radius is 1.8 μm. The dual E-type Hall magnetic field sensing element of claim 1, wherein the conductor pads comprise a bias current source input end, a bias current source output end, a first voltage sensing end and a second voltage sensing end. The double E-type Hall magnetic field sensing element as claimed in claim 1, wherein the lengths of the current paths are selected from 15 μm to 30 μm respectively. The double E-type Hall magnetic field sensing element according to claim 1, wherein the first E-type deep implantation layer and the second E-type deep implantation layer respectively comprise three protruding parts parallel to each other, and the protruding parts are The length minus the width of the conductor pad is between 0 μm and 30 μm. The double E-type Hall magnetic field sensing element according to claim 1, wherein the E-type deep implantation layer is an N-well implantation layer, a T-well implantation layer, and a P-well implantation layer (P-well) at least one of the implanted layers. The double E-type Hall magnetic field sensing element of claim 1, wherein when the E-type deep implant layer is an N-well implant layer or a T-well implant layer, the current blocking layer is a P+ blocking layer and a T-well implant layer. P+ guard ring structure, when the E-type deep implant layer is a P-well implant layer, the current blocking layer is an N+ block layer and an N+ guard ring structure. The double-E-type Hall magnetic field sensing element according to claim 1, wherein the conductor pads are N+ implanted layers, and the length and width are respectively selected from 15 μm to 30 μm. The double E-type Hall magnetic field sensing element according to claim 1, wherein the current blocking layer is a P+ blocking layer, an N+ blocking layer, an N-well implantation layer, and a T-well implantation layer and at least one of the implanted layers in the P-well area.

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