TWM625571U - Temperature sensing automatic tracking system and silicon carbide crystal growth equipment - Google Patents
Temperature sensing automatic tracking system and silicon carbide crystal growth equipment Download PDFInfo
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本創作涉及一種溫度感測追蹤控制,特別是涉及一種溫度感測自動追蹤系統及碳化矽長晶設備。The present invention relates to a temperature sensing tracking control, in particular to a temperature sensing automatic tracking system and silicon carbide crystal growth equipment.
碳化矽的應用領域廣泛,尤其是使用於半導體晶圓的碳化矽材料晶圓,由於碳化矽長晶製程中必須經由高溫長時間精密提煉,時常衍伸出加熱相關製程之課題,且攸關長晶產品的良率。Silicon carbide has a wide range of applications, especially for silicon carbide wafers used in semiconductor wafers. Since silicon carbide must be refined at high temperature and for a long time in the process of crystal growth, the subject of heating-related processes is often derived, and it is related to crystal growth products. yield rate.
因此針對碳化矽長晶製程中如何針對長晶過程進行溫度有效監控,是為待解決的一大課題。Therefore, how to effectively monitor the temperature of the SiC crystal growth process is a major issue to be solved.
有鑑於先前技術所提出的問題,本創作提供一種溫度感測自動追蹤系統及碳化矽長晶設備,予以解決長晶過程如何進行溫度有效監控的問題。In view of the problems raised by the prior art, the present invention provides a temperature sensing automatic tracking system and a silicon carbide crystal growth device to solve the problem of how to effectively monitor the temperature during the crystal growth process.
根據本創作的一實施例,提出了一種溫度感測自動追蹤系統,對一碳化矽長晶設備具有的一坩堝的加熱原料進行溫度自動追蹤,該系統包括:一控制器;一溫度擷取裝置,電性連接該控制器,該溫度擷取裝置設置於該碳化矽長晶設備上並對該坩堝的加熱原料進行一或多個溫度擷取,並將溫度擷取的結果回傳到該控制器;一移動裝置,電性連接該控制器,該移動裝置連接該溫度擷取裝置並控制該溫度擷取裝置的移動,其中當該移動裝置接收該控制器所傳送的溫度擷取結果的校正數據時,該移動裝置控制該溫度擷取裝置進行移動,以校正該溫度擷取裝置對該坩堝的加熱原料的溫度擷取位置。According to an embodiment of the present invention, a temperature sensing automatic tracking system is proposed, which automatically tracks the temperature of a heating material of a crucible of a silicon carbide crystal growth equipment. The system includes: a controller; a temperature acquisition device , electrically connected to the controller, the temperature acquisition device is arranged on the silicon carbide crystal growth equipment and performs one or more temperature acquisitions on the heating raw material of the crucible, and returns the temperature acquisition results to the controller a mobile device, electrically connected to the controller, the mobile device is connected to the temperature acquisition device and controls the movement of the temperature acquisition device, wherein when the mobile device receives the correction of the temperature acquisition result sent by the controller When the data is obtained, the moving device controls the temperature capturing device to move, so as to correct the temperature capturing position of the heated raw material of the crucible by the temperature capturing device.
在一實施例中,其中還包括一影像擷取器和一影像分析電路,分別電性連接該控制器,當該溫度擷取裝置對該坩堝的加熱原料進行溫度擷取時,還透過該影像擷取器擷取該坩堝加熱原料的影像,該影像分析電路接收該影像擷取器擷取該坩堝加熱原料的該影像進行影像分析,並將分析結果回傳到該控制器,該控制器根據影像分析結果的校正數據,控制該移動裝置對該溫度擷取裝置移動,以校正該溫度擷取裝置對該坩堝的加熱原料的溫度擷取位置。In one embodiment, an image capture device and an image analysis circuit are further included, which are respectively electrically connected to the controller. When the temperature capture device captures the temperature of the heating material of the crucible, the image is also transmitted through the image. The capture device captures the image of the crucible heating raw material, the image analysis circuit receives the image capture device to capture the image of the crucible heating raw material for image analysis, and returns the analysis result to the controller, the controller according to The correction data of the image analysis result is used to control the moving device to move the temperature capturing device, so as to correct the temperature capturing position of the heating material of the crucible by the temperature capturing device.
在一實施例中,其中透過該控制器控制該影像擷取器擷取該坩堝加熱原料的該影像為一即時影像或一紀錄影像時,該影像分析電路是分析該即時影像或該紀錄影像的熱光源影像的位置,該控制器透過該影像分析電路以得出該溫度擷取裝置對該坩堝的加熱原料的溫度擷取位置所需要校正的距離。In one embodiment, when the controller controls the image capture device to capture the image of the crucible heating material as a real-time image or a recorded image, the image analysis circuit analyzes the real-time image or the recorded image. For the position of the thermal light source image, the controller obtains the distance that the temperature acquisition device needs to correct for the temperature acquisition position of the heated raw material of the crucible through the image analysis circuit.
在一實施例中,其中該熱光源影像是該坩堝加熱原料的該影像中的其中一不特定光源熱點、一光源中心點或一不特定光源區域。In one embodiment, the thermal light source image is one of a hot spot of an unspecified light source, a central point of a light source, or an unspecified light source region in the image of the crucible heating the raw material.
在一實施例中,其中校正該溫度擷取裝置對該坩堝的加熱原料的溫度擷取位置是找出該熱光源影像中溫度最高的位置或範圍。In one embodiment, calibrating the temperature capturing position of the heating material of the crucible by the temperature capturing device is to find the position or range with the highest temperature in the thermal light source image.
在一實施例中,其中還包括一顯示螢幕,設置於該碳化矽長晶設備上,該顯示螢幕接收並顯示該影像擷取器擷取該坩堝加熱原料的該影像,以在該移動裝置控制對該溫度擷取裝置的移動以校正該溫度擷取裝置對該坩堝的加熱原料的溫度擷取位置時,該顯示螢幕顯示加熱原料的該影像配合該溫度擷取裝置對該坩堝的加熱原料進行溫度擷取及追蹤。In one embodiment, it further includes a display screen disposed on the silicon carbide crystal growth equipment, and the display screen receives and displays the image captured by the image capturer of the heating material in the crucible, so as to be controlled by the mobile device When the temperature capturing device is moved to correct the temperature capturing position of the heating raw material of the crucible, the display screen displays the image of the heating raw material in coordination with the temperature capturing device for the heating raw material of the crucible. Temperature capture and tracking.
在一實施例中,其中該影像分析電路接收該影像擷取器擷取該坩堝加熱原料的該影像進行影像分析時是透過灰階熱影像分析、熱成像影像分析、光譜影像分析、色彩影像分析、視覺檢測分析或圖像比對分析其中之一產生該影像分析結果,該控制器根據該影像分析結果的校正數據,控制該移動裝置對該溫度擷取裝置移動,以校正該溫度擷取裝置對該坩堝的加熱原料的溫度擷取位置。In one embodiment, when the image analysis circuit receives the image capturer to capture the image of the crucible heating raw material for image analysis, grayscale thermal image analysis, thermal image analysis, spectral image analysis, and color image analysis are used for image analysis. , one of visual inspection analysis or image comparison analysis to generate the image analysis result, the controller controls the mobile device to move the temperature capture device according to the calibration data of the image analysis result, so as to calibrate the temperature capture device The temperature of the heated feedstock for the crucible is captured at the location.
在一實施例中,其中該移動裝置為線性移動裝置,包括一或多個步進馬達,該線性移動裝置控制該溫度擷取裝置進行線性移動,以校正該溫度擷取裝置對該坩堝的加熱原料的溫度擷取位置。In one embodiment, the moving device is a linear moving device, comprising one or more stepping motors, the linear moving device controls the temperature capturing device to move linearly, so as to correct the heating of the crucible by the temperature capturing device The temperature capture position of the raw material.
在一實施例中,其中該線性移動裝置為單軸控制或雙軸控制的線性移動裝置。In one embodiment, the linear movement device is a single-axis control or a dual-axis control linear movement device.
根據本創作的另一實施例,提出了一種碳化矽長晶設備,具有所述的溫度感測自動追蹤系統。According to another embodiment of the present invention, a silicon carbide crystal growth device is provided, which has the temperature sensing automatic tracking system.
本創作的可能技術效果在於可以透過自動化的溫度感測擷取位置的校正,可以讓長晶過程的溫度感測準確度提升,避免長晶過程中進行的溫度感測沒有達到需求或不準確所造成的誤判,因此本創作可以改善長晶製程,優化長晶製程中對溫度的監控,間接提升長晶產品的良率。The possible technical effect of this creation is that the automatic temperature sensing capture position can be calibrated, which can improve the temperature sensing accuracy of the crystal growth process and avoid the temperature sensing during the crystal growth process that does not meet the requirements or is inaccurate. Therefore, this creation can improve the crystal growth process, optimize the temperature monitoring in the crystal growth process, and indirectly improve the yield of crystal growth products.
為了能更進一步瞭解本創作為達成既定目的所採取之技術及功效,請參閱以下有關本創作之詳細說明、圖式,相信本創作之目的、特徵與特點,當可由此得以深入且具體之瞭解,然而所附圖式僅提供參考與說明用,並非用來對本創作加以限制者。In order to have a further understanding of the technology and function adopted by this creation to achieve its intended purpose, please refer to the following detailed descriptions and diagrams of this creation. It is believed that the purpose, features and characteristics of this creation can be used to gain an in-depth and specific understanding. , however, the attached drawings are only for reference and description, and are not intended to limit the creation.
以下是透過特定的具體實施例來說明本創作所公開有關“溫度感測自動追蹤系統及碳化矽長晶設備”的實施方式,本領域技術人員可由本說明書所公開的內容瞭解本創作的優點與效果。本創作可透過其它不同的具體實施例加以施行或應用,本說明書中的各項細節也可基於不同觀點與應用,在不悖離本創作的構思下進行各種修改與變更。另外,本創作的附圖僅為簡單示意說明,並非依實際尺寸的描繪,事先聲明。以下的實施方式將進一步詳細說明本創作的相關技術內容,但所公開的內容並非用以限制本創作的保護範圍。The following is a description of the implementation of the "temperature sensing automatic tracking system and silicon carbide crystal growth equipment" disclosed in this creation through specific specific embodiments. Those skilled in the art can understand the advantages and disadvantages of this creation from the content disclosed in this specification. Effect. This creation can be implemented or applied through other different specific embodiments, and various details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of this creation. In addition, the drawings in this creation are only for simple schematic illustration, and are not drawn according to the actual size, and are stated in advance. The following embodiments will further describe the related technical contents of the present creation in detail, but the disclosed contents are not intended to limit the protection scope of the present creation.
爲了更清楚的說明本創作實施例中的技術方案,下面將對實施例描述中所需要使用的附圖作簡單的介紹,顯而易見地,下面描述中的附圖僅僅是本創作的一些實施例,對於本領域通常知識及普通技能技術人員來說,在不付出過多努力的前提下,還可以根據這些附圖獲得其它的附圖。In order to illustrate the technical solutions in the embodiments of the present invention more clearly, the following briefly introduces the accompanying drawings used in the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present invention. For those of ordinary knowledge and ordinary skill in the art, other drawings can also be obtained from these drawings without undue effort.
本創作公開一種溫度感測自動追蹤系統及碳化矽長晶設備,碳化矽長晶設備可配備溫度感測自動追蹤系統以進行對坩堝加熱原料的溫度進行監控,當溫度感測器對加熱原料的溫度感測位置偏離、不符合需求或不符合最佳的溫度感測位置時,本創作可及時發現並改變對加熱原料的溫度感測位置,進行溫度擷取校正,避免長晶製程的過程中對坩堝加熱原料的溫度掌握不準確,可避免人工誤判。The present invention discloses a temperature sensing automatic tracking system and silicon carbide crystal growing equipment. The silicon carbide crystal growing equipment can be equipped with a temperature sensing automatic tracking system to monitor the temperature of the crucible heating raw material. When the temperature sensing position deviates, does not meet the requirements or does not meet the optimal temperature sensing position, this creation can timely find and change the temperature sensing position of the heating material, and perform temperature acquisition and correction to avoid the process of crystal growth process. Inaccurate control of the temperature of the raw material heated by the crucible can avoid manual misjudgment.
本創作公開的溫度感測自動追蹤系統可配合移動電子裝置進行遠端監控,及時回傳加熱原料的影像分析結果及加熱原料的溫度進行即時監控,可避免人員耗時耗工進行人工監控,並且得知影像分析結果後,進行及時校正對坩堝加熱原料的溫度感測位置。其中也可配合移動電子裝置中軟體程序的使用者介面進行及時監控和及時溫度擷取校正。The temperature sensing automatic tracking system disclosed in the present creation can cooperate with mobile electronic devices for remote monitoring, timely return the image analysis results of the heating material and the temperature of the heating material for real-time monitoring, which can avoid time-consuming and labor-intensive manual monitoring by personnel, and After the image analysis result is known, the temperature sensing position of the heating raw material for the crucible is corrected in time. The user interface of the software program in the mobile electronic device can also be used for real-time monitoring and real-time temperature acquisition and correction.
本創作公開的碳化矽長晶設備所使用的碳化矽長晶方式可透過液相磊晶(Liquid Phase Epitaxy, LPE)的磊晶技術、高溫化學氣象沉積法(high temperature chemical vapor deposition, HTCVD)或高溫昇華法(physical vapor transport,PVT) 來進行長晶,可適用各種製程中坩堝的配置形式以監控長晶原料的溫度。The silicon carbide crystal growth method used by the silicon carbide crystal growth equipment disclosed in the present invention can be achieved by liquid phase epitaxy (LPE) epitaxy technology, high temperature chemical vapor deposition (HTCVD) or High temperature sublimation method (physical vapor transport, PVT) is used for crystal growth, which can be used in various crucible configurations to monitor the temperature of crystal growth raw materials.
根據本創作的一實施例,請參閱圖1,圖1呈現本創作一實施例所繪示溫度感測自動追蹤系統對碳化矽長晶設備具有的坩堝的加熱原料進行溫度自動追蹤的示意圖。According to an embodiment of the present invention, please refer to FIG. 1 , which is a schematic diagram of the temperature sensing automatic tracking system for automatically tracking the temperature of the heating material of the crucible of the silicon carbide crystal growth equipment according to the first embodiment of the present invention.
本創作提供一種溫度感測自動追蹤系統,其包括但不限於:一控制器11、一溫度擷取裝置12以及一移動裝置13。其中溫度擷取裝置12電性連接控制器11,溫度擷取裝置12設置於碳化矽長晶設備2上並對設置的一坩堝21的加熱原料210進行一或多個溫度擷取,並將溫度擷取的結果回傳到控制器11。The present invention provides an automatic tracking system for temperature sensing, which includes but is not limited to: a
而且移動裝置13電性連接控制器11,移動裝置13連接溫度擷取裝置12並控制溫度擷取裝置12的移動,其中當移動裝置13接收控制器11所傳送的溫度擷取結果的校正數據時,移動裝置13控制溫度擷取裝置12進行移動,以校正溫度擷取裝置12對坩堝21的加熱原料210的溫度擷取位置。Moreover, the
在一實施例中,移動裝置13接收控制器11所傳送的溫度擷取結果的校正數據,其校正數據可以是根據溫度擷取裝置12對坩堝21的加熱原料210在前後時間點的溫度差的校正數據,例如在第一時間點溫度擷取裝置12對坩堝21的加熱原料210的擷取溫度是800度,而在第二時間點溫度擷取裝置12對坩堝21的加熱原料210的擷取溫度是900度,因此控制器11可計算得知前後時間點的加熱原料210的溫度差是100度,因此控制器11可判斷加熱原料210已經持續加熱升溫100度或已經降溫100度,故透過前後時間點的溫度差的校正數據,如果控制器11判斷加熱原料210已經加熱上升100度變成900度,即透過移動裝置13控制溫度擷取裝置12進行移動,以校正溫度擷取裝置12對坩堝21的加熱原料210的溫度擷取位置,例如溫度擷取位置由坩堝21的加熱原料210的中心點隨機移動到中心點的附近(即相對加熱原料210中心點的其他位置)以進而判斷加熱原料210是否整體已完善加熱,或是由坩堝21的加熱原料210的非中心點移動到加熱原料210的中心點,以進行偵測加熱原料210是否完善加熱,本創作可廣泛對加熱原料210進行溫度偵測及改變溫度擷取位置,及時監控加熱原料210的加熱品質,且本創作不以前述為限。In one embodiment, the
在一實施例中,移動裝置13接收控制器11所傳送的溫度擷取結果的校正數據,其校正數據也可以是根據溫度擷取裝置12對坩堝21的加熱原料210在兩個位置的溫度差的校正數據。例如透過溫度擷取裝置12對坩堝21的加熱原料210的第一位置的擷取溫度是800度,而在溫度擷取裝置12對坩堝21的加熱原料210的第二位置擷取溫度是900度,因此控制器11經計算可得知加熱原料210的第一位置與第二位置的溫度差是100度,因此控制器11可判斷加熱原料210的第一位置加熱不足,因此透過第一位置與第二位置的溫度差的校正數據,如果控制器11判斷加熱原料210的第一位置加熱不足(為800度),即透過移動裝置13控制溫度擷取裝置12進行移動,以校正溫度擷取裝置12對坩堝21的加熱原料210的溫度擷取位置,例如溫度擷取位置12由坩堝21的加熱原料210的第二位置移動至第一位置以進而監控加熱原料210的第一位置的加熱情況或進而判斷後續是否整體已完善加熱,本創作可廣泛對加熱原料210進行溫度偵測及改變溫度擷取位置,及時監控加熱原料210的加熱品質,且本創作不以前述為限。In one embodiment, the
請繼續參閱圖2,圖2呈現本創作一實施例所繪示溫度感測自動追蹤系統還包括影像擷取器和影像分析電路的示意圖。Please continue to refer to FIG. 2 . FIG. 2 shows a schematic diagram of the temperature sensing automatic tracking system according to an embodiment of the present invention further including an image capture device and an image analysis circuit.
其中還包括一影像擷取器14和一影像分析電路15,分別電性連接控制器11,當溫度擷取裝置12對坩堝21的加熱原料210進行溫度擷取時,還透過影像擷取器14擷取坩堝21加熱原料210的影像,影像分析電路15接收影像擷取器14擷取坩堝21加熱原料210的影像進行影像分析,並將分析結果回傳到控制器11,控制器11根據影像分析結果的校正數據,控制移動裝置13對溫度擷取裝置12移動,以校正溫度擷取裝置12對坩堝21的加熱原料210的溫度擷取位置。It also includes an
配合圖3,圖3呈現本創作一實施例所繪示分析坩堝加熱原料的熱光源影像的位置的示意圖。In conjunction with FIG. 3 , FIG. 3 is a schematic diagram showing the position of the thermal light source image for analyzing the crucible heating raw material according to an embodiment of the present invention.
其中透過控制器11控制影像擷取器14擷取坩堝21加熱原料210的影像為一即時影像或一紀錄影像時,影像分析電路15是分析即時影像或紀錄影像的熱光源影像212的位置,控制器11透過影像分析電路15以得出溫度擷取裝置12對坩堝21的加熱原料210的溫度擷取位置所需要校正的距離。When the
在一實施例中, 所需要校正的距離例如是當透過影像擷取器14擷取坩堝21加熱原料210生成的影像151,並以影像分析電路15判斷熱光源影像212在影像151中的位置,該位置也例如是針對加熱原料210的影像151的影像座標位置。因此透過影像分析電路15進行影像分析找出加熱原料210的熱光源影像212的位置時,移動裝置13接收控制器11根據影像分析結果的校正數據控制溫度擷取裝置12進行移動,移動到加熱原料210的熱光源影像212的位置,以校正溫度擷取裝置12對坩堝21的加熱原料210的溫度擷取位置。In one embodiment, the distance that needs to be corrected is, for example, when the
在一實施例中,移動裝置13控制溫度擷取裝置12進行移動可根據影像151的影像座標距離進行調整,但本創作不以此為限。In one embodiment, the movement of the
繼續配合圖4,圖4呈現本創作一實施例所繪示分析熱光源影像是坩堝加熱原料的影像中不特定光源熱點、光源中心點或不特定光源區域的示意圖。Continuing with FIG. 4 , FIG. 4 shows a schematic diagram of an unspecified light source hot spot, a light source center point or an unspecified light source area in the image of the thermal light source image analyzed by the crucible heating raw material according to an embodiment of the present invention.
其中熱光源影像212是坩堝21加熱原料210的影像151中的其中一光源中心點212A、一不特定光源熱點212B或一不特定光源區域212C,甚至不排除是坩堝21加熱原料210的全面積熱光源影像。The thermal
在一實施例中,校正溫度擷取裝置12對坩堝21的加熱原料210的溫度擷取位置是找出熱光源影像212中溫度最高的位置或範圍。即影像擷取器14擷取坩堝21加熱原料210的影像151並將影像151透過影像分析電路15進行影像分析時,分析找出熱光源影像212中溫度最高的位置或範圍,以校正溫度擷取裝置12對坩堝21的加熱原料210的溫度擷取位置為坩堝21加熱原料210溫度最高的位置或範圍,以達到最佳的進行溫度擷取及監控效果,且本創作不以前述為限。In one embodiment, the calibration of the temperature acquisition position of the
在一實施例中,由於坩堝21的加熱原料210在整個製程過程中為不間斷加熱使得加熱原料210呈現相態變化,因此熱光源影像212的生成隨時間而變化,所以熱光源影像212中的不特定光源區域也可以包含加熱原料210上在加熱過程產生的特定或不特定的光源波紋、紋路或軌跡等,但本創作也不以此為限。In one embodiment, since the heating
在一實施例中,溫度擷取裝置12對坩堝21的加熱原料210所進行的溫度擷取是透過加熱原料210所散發出來的溫場變化的一或多個溫度而取得,因此移動裝置13接收控制器11所傳送的溫度擷取結果的校正數據是比對製程數據的理論基準值後而得出,但本創作不以前述為限。In one embodiment, the temperature acquisition performed by the
在一實施例中,溫度擷取裝置12對坩堝21的加熱原料210所進行溫度擷取的位置可以先設置(定義)在坩堝21的加熱原料210中心點。當碳化矽長晶設備2系統運行時,因為製程中溫度的變化、相關移動機構元件所造成的物理性震動或外力引起的震動造成溫度擷取裝置12擷取溫度的位置偏移或移動時,可配合影像擷取器14對坩堝21的加熱原料210進行擷取產生影像151後,透過影像分析電路15以二值化的灰階影像或面積分析出溫度擷取裝置12需要校正的距離,控制器11根據影像分析結果的校正數據,控制移動裝置13即時進行閉迴路控制,而控制溫度擷取裝置12的移動,以校正溫度擷取裝置12對坩堝21的加熱原料210的溫度擷取位置。In one embodiment, the position of the
在一實施例中,溫度擷取裝置12所設置(定義)的溫度擷取位置在坩堝21的加熱原料210中心點是以影像151的中心點為基準(例如影像151中的中心點原點座標以及對應設置的延伸座標)以得出溫度擷取裝置12對坩堝21的加熱原料210的溫度擷取位置的校正距離。或者可配合溫度擷取位置所設置(定義)在坩堝21的加熱原料210中心點也可以是溫度擷取裝置12相對於坩堝21的物理位置特性的中心點來進行設置,且本創作不以前述為限。因此本創作可讓溫度擷取裝置12所擷取溫度的位置隨時保持在加熱原料210的中心點(定義的)位置,且本創作也不以此為限。In one embodiment, the temperature capture position set (defined) by the
在一實施例中,也可以根據控制器11所獲得的溫度擷取裝置12的溫度擷取結果以驅動碳化矽長晶設備2的加熱系統(圖未示)進行閉迴路控制而對原料加熱,隨時讓坩堝21已經加熱的加熱原料210維持所設定的溫度,並針對加熱原料210的中心點或(定義)設定的位置即時追蹤進行溫度控制,且本創作也不以前述為限。In one embodiment, the heating system (not shown) of the SiC
請繼續參閱圖5及圖6,圖5呈現本創作一實施例所繪示溫度感測自動追蹤系統還包括顯示螢幕的示意圖。圖6呈現本創作一實施例所繪示以顯示螢幕顯示加熱原料的影像的示意圖。Please continue to refer to FIG. 5 and FIG. 6 . FIG. 5 shows a schematic diagram of the temperature sensing automatic tracking system according to an embodiment of the present invention further including a display screen. FIG. 6 is a schematic diagram illustrating an image of heating raw materials on a display screen according to an embodiment of the present invention.
其中還包括一顯示螢幕16設置於碳化矽長晶設備2上,顯示螢幕16接收並顯示影像擷取器14擷取坩堝21加熱原料210的影像,以在移動裝置13控制對溫度擷取裝置12的移動以校正溫度擷取裝置12對坩堝21的加熱原料210的溫度擷取位置時,顯示螢幕16顯示加熱原料210的影像配合溫度擷取裝置12對坩堝21的加熱原料210進行溫度擷取及追蹤。It also includes a
在一實施例中,使用者或工程師可透過顯示螢幕16上顯示的加熱原料210的影像所定位出的溫度擷取位置161(即溫度擷取裝置12同時擷取溫度的位置)對坩堝21的加熱原料210進行溫度擷取及追蹤,產生即時畫面影像監控及溫度擷取追蹤的效果。In one embodiment, the user or engineer can determine the temperature of the
根據上述,在一實施例中,影像分析電路15接收影像擷取器14擷取坩堝21加熱原料210的影像進行影像分析時是透過灰階熱影像分析、熱成像影像分析、光譜影像分析、色彩影像分析、視覺檢測分析或圖像比對分析其中之一產生影像分析結果,控制器11根據影像分析結果的校正數據,控制移動裝置13對溫度擷取裝置12移動,以校正溫度擷取裝置12對坩堝21的加熱原料210的溫度擷取位置。According to the above, in one embodiment, the image analysis circuit 15 receives the image captured by the
在一實施例中,視覺檢測分析是影像分析電路15透過對原始擷取的影像151(如圖3)進行多重解析度二值化處理並去除雜訊後得出熱光源影像212的位置,以及圖像比對分析是透過對原始擷取的影像151進行與內建圖像的比對所合成的圖像中的熱光源影像212的位置,且本創作也不以前述為限。In one embodiment, the visual inspection analysis is that the image analysis circuit 15 obtains the position of the thermal
在一實施例中,為了提升校正溫度擷取裝置12對坩堝21的加熱原料210的溫度擷取位置時的精度,移動裝置13可設置為線性移動裝置,包括一或多個步進馬達,線性移動裝置控制溫度擷取裝置12進行線性移動,以校正溫度擷取裝置12對坩堝21的加熱原料210的溫度擷取位置,而且,線性移動裝置為單軸控制或雙軸控制的線性移動裝置。In an embodiment, in order to improve the accuracy of calibrating the temperature capturing position of the
〔本創作的可能技術效果〕[Possible technical effects of this creation]
本創作的可能技術效果在於可以透過自動化的溫度感測擷取位置的校正,讓長晶過程的溫度感測準確度提升,避免長晶過程中進行的溫度感測沒有達到需求或不準確所造成的誤判,因此本創作可以改善長晶製程,優化長晶製程中對溫度的監控,間接提升長晶產品的良率。The possible technical effect of this creation is that the temperature sensing accuracy of the crystal growth process can be improved through the calibration of the automatic temperature sensing capture position, so as to avoid the temperature sensing during the crystal growth process that does not meet the requirements or is inaccurate. Therefore, this creation can improve the crystal growth process, optimize the temperature monitoring in the crystal growth process, and indirectly improve the yield of crystal growth products.
針對碳化矽長晶爐(設備)以坩堝加熱材料的過程所產生的高溫熱點或區域,進行溫度感測追蹤,本創作可解決透過人工目測判斷而無法準確判斷溫度以及如何準確進行校正的問題。For the high-temperature hot spots or areas generated by the process of heating the material with the crucible in the silicon carbide crystal growth furnace (equipment), the temperature sensing and tracking are carried out. This creation can solve the problem that the temperature cannot be accurately judged through manual visual judgment and how to correct it accurately.
具體透過對坩堝長晶原料的溫度感測過程,配合影像擷取器擷取加熱原料的影像(熱光影照片)並進行影像判斷,以找出溫度感測器需要擷取溫度的位置,例如隨時找出加熱原料的溫度最高點,以做精準的監控,避免偵測到不適當的溫度位置,監控以保持加熱原料的溫度,以間接改善長晶製程的良率。Specifically, through the temperature sensing process of the crucible crystal growth raw material, the image of the heated raw material (thermal light and shadow photo) is captured with the image capture device and the image is judged to find out the position where the temperature sensor needs to capture the temperature, for example, at any time. Find the highest temperature point of the heating material for accurate monitoring, avoid detecting inappropriate temperature positions, and monitor to maintain the temperature of the heating material to indirectly improve the yield of the crystal growth process.
而且可透過溫度擷取裝置例如紅外線測溫槍的溫度擷取方式進行溫度感測,配合單軸以上控制機構以即時達到溫度擷取位置的精準校正。Moreover, the temperature can be sensed through the temperature acquisition method of a temperature acquisition device such as an infrared thermometer, and the precise correction of the temperature acquisition position can be achieved in real time with the control mechanism above a single axis.
本創作可以找出加熱原料在加熱過程中特定或不特定的光源熱點、中心點或是區域,以即時進行溫度擷取位置的校正及溫度感測,藉以維持製程的可靠度。The invention can find out the specific or unspecified light source hot spot, center point or area during the heating process of the heating material, so as to perform the correction of the temperature acquisition position and the temperature sensing in real time, so as to maintain the reliability of the process.
本創作的溫度感測及溫度擷取位置的校正,可透過顯示螢幕進行監控,透過碳化矽長晶設備的顯示螢幕即時監控,以利於使用者或工程師,隨時進行溫度感測的視覺化監控。The temperature sensing of this creation and the correction of the temperature capture position can be monitored through the display screen, and the real-time monitoring through the display screen of the silicon carbide crystal growth equipment is convenient for users or engineers to conduct visual monitoring of temperature sensing at any time.
最後需要說明的是,於前述說明中,儘管已將本創作技術的概念以多個示例性實施例具體地示出與闡述,然而在此項技術之領域中具有通常知識者將理解,在不背離由以下申請專利範圍所界定的本創作技術的概念之範圍的條件下,可對其作出形式及細節上的各種變化。Finally, it should be noted that, in the foregoing description, although the concept of the present creation technology has been specifically shown and described with a number of exemplary embodiments, those with ordinary knowledge in the field of this technology will understand that without Various changes in form and details may be made therein without departing from the scope of the concept of the inventive technology as defined by the following claims.
1:溫度感測自動追蹤系統
11:控制器
12:溫度擷取裝置
13:移動裝置
14:影像擷取器
15:影像分析電路
151:影像
16:顯示螢幕
161:溫度擷取位置
2:碳化矽長晶設備
21:坩堝
210:加熱原料
212:熱光源影像
212A:光源中心點
212B:不特定光源熱點
212C:不特定光源區域
1: Temperature sensing automatic tracking system
11: Controller
12: Temperature capture device
13: Mobile Devices
14: Image grabber
15: Image analysis circuit
151: Video
16: Display screen
161: Temperature capture location
2: Silicon carbide crystal growth equipment
21: Crucible
210: heating raw materials
212: Thermal
圖1呈現本創作一實施例所繪示溫度感測自動追蹤系統對碳化矽長晶設備具有的坩堝的加熱原料進行溫度自動追蹤的示意圖。FIG. 1 is a schematic diagram of the temperature sensing automatic tracking system for automatically tracking the temperature of the heating material of the crucible included in the silicon carbide crystal growth equipment according to an embodiment of the present invention.
圖2呈現本創作一實施例所繪示溫度感測自動追蹤系統還包括影像擷取器和影像分析電路的示意圖。FIG. 2 shows a schematic diagram of the temperature sensing automatic tracking system further comprising an image capture device and an image analysis circuit according to an embodiment of the present invention.
圖3呈現本創作一實施例所繪示分析坩堝加熱原料的熱光源影像的位置的示意圖。FIG. 3 is a schematic diagram showing the position of the image of the thermal light source for analyzing the crucible heating the raw material according to an embodiment of the present invention.
圖4呈現本創作一實施例所繪示分析熱光源影像是坩堝加熱原料的影像中不特定光源熱點、光源中心點或不特定光源區域的示意圖。FIG. 4 is a schematic diagram illustrating a hot spot of a light source, a center point of a light source, or an area of an unspecified light source in an image of an unspecified light source in an image of a thermal light source that is analyzed by a crucible heating raw material according to an embodiment of the present invention.
圖5呈現本創作一實施例所繪示溫度感測自動追蹤系統還包括顯示螢幕的示意圖。FIG. 5 is a schematic diagram of the temperature sensing automatic tracking system further comprising a display screen according to an embodiment of the present invention.
圖6呈現本創作一實施例所繪示以顯示螢幕顯示加熱原料的影像的示意圖。FIG. 6 is a schematic diagram illustrating an image of heating raw materials on a display screen according to an embodiment of the present invention.
1:溫度感測自動追蹤系統 1: Temperature sensing automatic tracking system
11:控制器 11: Controller
12:溫度擷取裝置 12: Temperature capture device
13:移動裝置 13: Mobile Devices
2:碳化矽長晶設備 2: Silicon carbide crystal growth equipment
21:坩堝 21: Crucible
210:加熱原料 210: heating raw materials
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