TWM625389U - Micro speaker structure - Google Patents

Abstract

The present invention discloses a miniature speaker structure. The micro-speaker structure includes a base layer, a first conductive circuit layer, a second conductive circuit layer and an insulating layer. The base layer forms an opening. The first conductive circuit layer covers the opening, the first conductive circuit layer includes a plurality of first micro-segment elements, and the first conductive circuit layer is doped with magnetic conductive material. A second conductive trace layer is formed over the first conductive trace layer, and the second conductive trace layer includes a plurality of second micro-segment elements. The insulating layer is formed between the first conductive circuit layer and the second conductive circuit layer, and the insulating layer is used to separate the first conductive circuit layer and the second conductive circuit layer, so that the first conductive circuit layer and the second conductive circuit layer are not in contact . An air chamber is formed between the insulating layer and the first conductive circuit layer, and the air chamber communicates with the opening.

Description

Micro speaker structure

The present invention relates to a speaker structure, in particular to a miniature speaker structure.

Speakers convert electrical frequencies into sound. Speakers are composed of magnets, coils and speaker diaphragms. When the current is passed through the coil to generate an electromagnetic field, the electromagnetic field interacts with the magnetic field of the magnet to drive the horn diaphragm to vibrate, which in turn pushes the surrounding air to vibrate, thereby producing sound.

At present, the existing speakers all have a certain volume and weight, and cannot be further miniaturized. If the existing loudspeaker is used in an electronic device, the electronic device often becomes heavier. Therefore, if the speaker device is to be used in an electronic device that needs to be miniaturized, a magnetic element made of a special material and a special process needs to be installed in the device, so that the speaker device can be miniaturized.

Therefore, how to overcome the above-mentioned defects through structural improvement and process design has become one of the important issues to be solved in this field.

The technical problem to be solved by this creation is to provide a miniaturized speaker structure in view of the deficiencies of the prior art.

In order to solve the above-mentioned technical problems, one of the technical solutions adopted in this creation is to provide a micro-speaker structure, which includes a base layer, a first conductive circuit layer, a second conductive circuit layer and an insulating layer. The base layer forms an opening. The first conductive circuit layer covers the opening, the first conductive circuit layer includes a plurality of first micro-segment elements, and the first conductive circuit layer is doped with magnetic conductivity material, and the surface of the first conductive circuit layer can be coated with a coating film. A second conductive trace layer is formed over the first conductive trace layer, and the second conductive trace layer includes a plurality of second micro-segment elements. The insulating layer is formed between the first conductive circuit layer and the second conductive circuit layer, and the insulating layer is used to separate the first conductive circuit layer and the second conductive circuit layer, so that the first conductive circuit layer and the second conductive circuit layer are not in contact . An air chamber is formed between the insulating layer and the first conductive circuit layer, and the air chamber communicates with the opening.

One of the beneficial effects of the present invention is that the micro-speaker structure provided by the present invention can pass through “the first conductive circuit layer includes a plurality of first micro-segment elements” and “the second conductive circuit layer includes a plurality of second micro-segment elements” components” and the technical scheme of “the insulating layer is used to separate the first conductive circuit layer and the second conductive circuit layer, so that the first conductive circuit layer and the second conductive circuit layer are not in contact”, so as to pass the first micro-segment element and the second conductive circuit layer. Each of the two micro-segment elements is energized to generate different electromagnetic fields, which drive the vibrating film formed by the first conductive circuit layer to vibrate, and push the surrounding air to vibrate to generate sound.

In order to further understand the features and technical content of this creation, please refer to the following detailed descriptions and drawings about this creation, however, the provided drawings are only for reference and description, and are not intended to limit this creation.

Z: Micro speaker structure

1: basal layer

11: Thin oxide layer

2: The first conductive circuit layer

20: The first through hole

21: The first micro-segment element

3: The second conductive circuit layer

30: Second through hole

31: The second micro-segment element

4: Insulation layer

40: The third through hole

S: air chamber

U: open

51: The first electrode pad

52: Second electrode pad

6: Folding structure

E1: first etching material layer

E2: Second etching material layer

M10~M19: Metal segment

M21: first electrode

M22: Second electrode

L: etching solution

S1~S6, S51, S52: Steps

FIG. 1 to FIG. 6 are schematic diagrams of the micro-speaker structure of the inventive embodiment at different process stages.

FIG. 7 is a schematic diagram of the structure of a micro-speaker according to an embodiment of the invention.

FIG. 8 is a schematic diagram of a first micro-segment element and a second micro-segment element according to an embodiment of the invention.

FIG. 9 and FIG. 10 are schematic diagrams of steps of a method for fabricating a micro-speaker structure according to a creative embodiment.

The following is a description of the implementation of the "miniature speaker structure" disclosed in the present creation through specific specific embodiments, and those skilled in the art can understand the advantages and effects of the present creation from the content disclosed in this specification. This creation can be implemented or applied through other different specific embodiments, and various details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of this creation. In addition, the drawings in this creation are only for simple schematic illustration, and are not drawn according to the actual size, and are stated in advance. The following embodiments will further describe the related technical contents of the present creation in detail, but the disclosed contents are not intended to limit the protection scope of the present creation. Additionally, it should be understood that, although the terms "first," "second," "third," etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are primarily used to distinguish one element from another. In addition, the term "or", as used herein, should include any one or a combination of more of the associated listed items, as the case may be. In addition, the term "or", as used herein, should include any one or a combination of more of the associated listed items, as the case may be.

[Example]

Referring to FIG. 7 , FIG. 1 to FIG. 6 are schematic diagrams of the micro-speaker structure of the inventive embodiment at different process stages, and FIG. 7 is a schematic diagram of the micro-speaker structure of the inventive embodiment. The fabrication method of the micro-speaker structure Z of the present invention will be further described below. Please refer to FIG. 7 first, the present invention provides a micro speaker structure Z, which mainly includes: a base layer 1 , a first conductive circuit layer 2 , a second conductive circuit layer 3 and an insulating layer 4 . The first conductive circuit layer 2 includes a plurality of first micro-segment elements, and the second conductive circuit layer 3 includes a plurality of second micro-segment elements (the first micro-segment element 21 and the second micro-segment element 31 are not shown in FIG. 7 . , please refer to Figure 8 and Figure 9 first). The base layer 1 forms an opening U, and the first conductive circuit layer 2 covers the opening U. The second conductive trace layer 3 is formed over the first conductive trace layer 2 , and the insulating layer 4 is formed between the first conductive trace layer 2 and the second conductive trace layer 3 . Specifically, the lower surface of the second conductive circuit layer 3 is coated with an insulating layer 4, so that the insulating layer 4 can separate the first conductive circuit layer 2 and the second conductive circuit layer 3, and the first conductive circuit layer 2 and the second conductive circuit layer The conductive trace layers 3 are not in contact. In addition, an air chamber S is formed between the insulating layer 4 and the first conductive circuit layer 2 , and the air chamber S communicates with the opening U.

Continuing to refer to FIG. 7 , the micro-speaker structure Z provided by the present invention further includes a first electrode pad 51 and a second electrode pad 52 . The first electrode pad 51 is disposed on one side of the first conductive circuit layer 2 and is electrically connected to the first conductive circuit layer 2 , and the first electrode pad 51 serves as the positive and negative electrodes of the first conductive circuit layer 2 , and the second electrode pad 52 is provided On one side of the second conductive circuit layer 3 and electrically connected to the second conductive circuit layer 3 , the second electrode pad 52 serves as the positive and negative electrodes of the second conductive circuit layer 3 . In addition, for example, in this embodiment, the first electrode pad 51 and the second electrode pad 52 are disposed on opposite sides of the micro-speaker structure Z, but the invention is not limited thereto. It is worth mentioning that since the first conductive circuit layer 2 and the second conductive circuit layer 3 are not in contact with each other due to being separated from the insulating layer 4 , there is no generation between the first electrode pad 51 and the second electrode pad 52 . Electrical connection.

Based on the above, a plurality of first through holes 20 are respectively formed on both sides of the first conductive circuit layer 2 , and the plurality of first through holes are used to communicate the air chamber S and the opening U. The second conductive circuit layer 3 includes a plurality of second through holes 30 , the insulating layer 4 includes a plurality of third through holes 40 corresponding to the plurality of second through holes 30 , and a plurality of second through holes 30 and a plurality of third through holes 30 The hole 40 communicates with the air chamber S. In addition, both sides of the second conductive circuit layer 3 and the insulating layer 4 respectively have a folded structure 6, and a thin oxide layer 11 is formed on the upper surface of the base layer 1 (the thin oxide layer 11 is formed on the base layer 1 and the first conductive layer 1). between circuit layers 2). For example, the material of the thin oxide layer 11 is silicon oxide or silicon nitride, but the present invention is not limited thereto. In addition, the upper surface and the lower surface of the first conductive circuit layer 2 may be doped with a magnetically conductive material, and the magnetically conductive material includes but is not limited to soft iron or nickel.

In addition, it should be noted that this creation does not use each element in the micro-speaker structure Z The components of the parts are limited. For example, in this embodiment, the material of the base layer 1 includes silicon (specifically, a silicon wafer). The conductive circuit layers (the first conductive circuit layer 2 and the second conductive circuit layer 3 ) include a diaphragm layer and a circuit layer on the diaphragm layer (ie, the first micro-segment element 21 and the second micro-segment element 31 to be described later). The material of the diaphragm layer includes but is not limited to polysilicon, silicon oxide, silicon nitride or gallium arsenide, and the material of the circuit layer includes metals with high electrical conductivity such as aluminum and copper. The material of the insulating layer 4 includes silicon nitride, silicon oxide or tetraethoxysilane.

Next, the manufacturing method of the micro-speaker structure Z of the present invention will be described. Referring to FIG. 1 to FIG. 6, and referring to FIG. 9 and FIG. 10 together, FIG. 9 and FIG. 10 are schematic diagrams of steps of a manufacturing method of a micro-speaker structure according to a creative embodiment. This creative embodiment provides a method for manufacturing a miniature speaker structure Z, which at least includes the following steps:

Step S1 : forming a thin oxide layer 11 on a silicon substrate, and then forming a first etching material layer E1 on the thin oxide layer 11 .

Step S2 : forming a first conductive circuit layer 2 including a plurality of first micro-segment elements 21 on the first etching material layer E1 , and forming a plurality of first through holes 20 on both sides of the first conductive circuit layer 2 respectively , the first conductive circuit layer 2 covers the upper surface and the side surface of the first etching material layer E1.

Step S3 : forming a second etching material layer E2 on the first conductive circuit layer 2 .

Step S4 : an insulating layer 4 is formed on the second etching material layer E2 , and the insulating layer 4 covers the second etching material layer E2 and the first conductive circuit layer 2 .

Step S5 : forming a second conductive circuit layer 3 including a plurality of second micro-segment elements 31 on the insulating layer 4 , forming a plurality of second through holes 30 on the second conductive circuit layer 3 , and forming a plurality of second through holes 30 on the insulating layer 4 The plurality of third through holes 40 correspond to the plurality of second through holes 30 , and the plurality of second through holes 30 and the plurality of third through holes 40 communicate with each other.

As mentioned above, step S5 further includes step S51 and step S52.

Step S51 : forming two first electrode pads 51 on the first conductive circuit layer 2 and Two second electrode pads 52 are formed on the second conductive circuit layer 3, and the plurality of first micro-segment elements 21 are electrically connected to the two first electrode pads 51 (the two first electrode pads 51 are respectively used as positive and negative electrodes), and many The two second micro-segment elements 31 are electrically connected to the two second electrode pads 52 (the two second electrode pads 52 are used as positive and negative electrodes respectively).

Step S52 : forming a folded structure 6 on both sides of the second conductive circuit layer 3 and the insulating layer 4 , respectively.

Step S6: an opening U is formed on the silicon substrate, and an etching solution L is injected from the second through hole 30, so that the etching solution L passes through the third through hole 40 to remove the second etching material layer E2 to form a gas chamber S, And the etching solution L is passed through the first through hole 20 to remove the first etching material layer E1 , and the opening U is communicated with the gas chamber S through the first through hole 20 .

Specifically, the fabrication method of the micro-speaker structure Z provided by the present invention is to first use a silicon wafer (ie, a silicon substrate) as the base layer 1, and then form a thin oxide layer 11 thereon. Materials of the base layer 1 include but are not limited to silicon, glass, sapphire, LDS (Laser Direct Structuring) plastic, germanium wafer (Ge), gallium arsenide (GaAs), indium phosphide (InP), and gallium nitride (GaN), Silicon carbide (SiC), zinc selenide (ZnSe), etc. Next, a first silicon dioxide build-up layer is performed on the thin oxide layer 11 to form a first etching material layer E1, as shown in FIG. 1 . Next, as shown in FIG. 2, a first polysilicon (or silicon nitride) build-up layer is performed on the first etching material layer E1 and the thin oxide layer 11, and a metal coil is fabricated on the polysilicon (or silicon nitride) layer. circuit to form a first conductive circuit layer 2 including a plurality of first micro-segment elements 21 , and the first conductive circuit layer 2 covers the first etching material layer E1 and the thin oxide layer 11 . The polysilicon build-up layer in the first conductive circuit layer 2 is mainly used as the diaphragm of the micro-speaker structure Z, and the metal coil circuit is the circuit 2 (Diaphragm circuit) on the diaphragm, that is, the first micro-segment element 21, which is used as a circuit 2 (Diaphragm circuit) on the diaphragm. Microspeaker structure Z's voice coil. In addition, it is worth mentioning that the surface of the first conductive circuit layer 2 can be coated with a coating film, and the present invention does not limit the material of the coating film. For example, the coating can be made of metal or non-metallic materials, such as gold, silver, aluminum, aluminum-magnesium, ceramics, diamonds, etc., to change the surface material of the diaphragm, so that the diaphragm can vibrate differently. range of sounds.

Based on the above, as shown in FIG. 3 , holes are dug on both sides of the first conductive circuit layer 2 , that is, a plurality of first through holes 20 are formed, and a second silicon dioxide build-up layer is performed to form a second etching material layer E2 . Next, as shown in FIG. 4 , a layer of silicon nitride _{( SixNy} ) is coated on the second etching material layer E2 to form an insulating layer 4 (or a passivation layer). Next, as shown in FIG. 5, a second polysilicon (or silicon nitride) build-up layer is performed on the insulating layer 4, and a metal coil circuit is fabricated on the polysilicon (or silicon nitride) layer to form a plurality of first The second conductive circuit layer 3 of the two micro-segment elements 31 . It should be noted that the insulating layer 4 is used to isolate the first conductive circuit layer 2 and the second conductive circuit layer 3 .

Based on the above, referring to FIG. 5 , a first electrode pad 51 is formed on the first conductive circuit layer 2 and a second electrode pad 52 is formed on the second conductive circuit layer 3 . The present invention is not limited by the number of the first electrode pads 51 and the second electrode pads 52. Preferably, the first electrode pads 51 and the second electrode pads 52 are at least two groups (ie, the first electrode pads 51 and the second electrode pads 52). The number of pads 52 is at least two). The plurality of first micro-segment elements 21 are electrically connected to the two first electrode pads 51 (the two first electrode pads 51 are used as positive and negative electrodes respectively), and the plurality of second micro-segment elements 31 are electrically connected to the two second electrode pads 52 (The two second electrode pads 52 serve as positive and negative electrodes, respectively). Next, as shown in FIG. 6 , the second conductive circuit layer 3 and the insulating layer 4 below it are dug to form a plurality of second through holes 30 and a plurality of third through holes 40 , and each second through hole is 30 corresponds to each third through hole 40 , so that each second through hole 30 communicates with the corresponding third through hole 40 .

With the above in mind, continue to refer to FIG. 6 and also refer to FIG. 7 . An opening U is formed on the base layer 1 , and then an etching solution L is injected into the plurality of second through holes 30 . The material of the etching solution L mainly includes hydrofluoric acid (HF), and the etching solution L passes through the plurality of second through holes 30 . and a plurality of third through holes 40 to remove the second etching material layer E2 , so that an air chamber S is formed between the insulating layer 4 and the first conductive circuit layer 2 . Next, the etching solution L passes through the plurality of first through holes 20 to remove the first etching material layer E1 , so that the first conductive circuit layer 2 is exposed, and the fabrication of the micro-speaker structure Z is completed. by the way However, after the second conductive circuit layer 3 and the insulating layer 4 are formed, a folded structure 6 is formed on both sides of the second conductive circuit layer 3 and the insulating layer 4, respectively, to strengthen the second conductive circuit layer 3 and the insulating layer. 4. Elasticity and structural strength.

Next, referring to FIG. 8 and FIG. 9 , FIG. 8 is a schematic diagram of the first micro-segment element and the second micro-segment element of the creative embodiment, and FIG. 9 is the first micro-segment element and the second micro-segment element of the creative embodiment. Schematic representation of the electrode layers of a line segment element. Specifically, the material of the first micro-segment element 21 and the second micro-segment element 31 is a substrate doped with magnetically conductive elements. As shown in FIG. 8 , each first micro-segment element 21 and each second micro-segment element 21 and each second The micro-segment element 31 respectively includes a plurality of metal segments M10 to M19 that start from a starting point and form multiple continuous wirings around the starting point. The two ends of each metal segment are a first electrode end and a second electrode end, wherein The starting point is a first electrode M21 of the micro-segment element, and the ends of the multi-segment metal line segments forming multiple turns of continuous wiring are a second electrode M22 of the micro-segment element. The two first electrode pads 51 serve as positive and negative electrodes to collect the first electrode end and the second electrode end of each metal line segment of the multi-segment metal line segments in each first micro-line segment element 21 respectively. The two second electrode pads 52 are used as positive and negative electrodes to collect the first electrode end and the second electrode end of each metal line segment of the multi-segment metal line segments in each second micro-line segment element 31 respectively. Furthermore, the multi-segment metal line segments in the first micro-segment element 21 can be directly collected to the first electrode pad 51 in the first conductive circuit layer 2 , or the multi-segment metal line segments in the first micro-segment element 21 can also pass through the first electrode pad 51 . The vias between the diaphragm layer (polysilicon) of the conductive circuit layer 2 and the diaphragm layer (polysilicon) of the second conductive circuit layer 3 are connected together with the multi-segment metal line segments in the second micro-segment element 31 to the first The two conductive circuit layers 3 are then collected to the first electrode pad 51 and the second electrode pad 52 respectively. However, it should be noted that the first micro-segment element 21 and the second micro-segment element 31 are separated from each other and are not electrically connected.

It should be noted that the present invention is not limited to the number, shape, size and arrangement of the first micro-segment element 21 and the second micro-segment element 31. For example, the first micro-segment element 21 The second micro-segment element 31 can be square, circular or polygonal, and a plurality of first micro-segment elements 21 can be formed on the first conductive circuit layer 2 to form an array-type micro-segment element, and the second conductive circuit layer 3 can also be formed. A plurality of second micro-segment elements 31 are formed to form an array-type micro-segment element. In addition, the circuit designs of the first micro-segment element 21 and the second micro-segment element 31 may be the same or different.

Therefore, in the present invention, a plurality of first micro-segment elements 21 and a plurality of second micro-segment elements 31 are formed on the first conductive circuit layer 2 and the second conductive circuit layer 3 respectively, and by The element 21 and the plurality of second micro-segment elements 31 are connected with electric current to generate an electromagnetic field. Through the interaction of the different magnetic fields generated by the first micro-segment element 21 and the second micro-segment element 31, the vibrating membrane (ie, the first conductive circuit layer 2) is driven to vibrate, thereby pushing the surrounding air to vibrate to generate sound. The sound is then emitted from the opening U to the external environment.

[Advantageous effects of the embodiment]

One of the beneficial effects of the present invention is that the micro-speaker structure Z provided by the present invention can pass through "the first conductive circuit layer 2 includes a plurality of first micro-segment elements 21" and "the second conductive circuit layer 3 includes a plurality of first micro-segment elements 21". The second micro-segment element 31" and the technical solution of "the insulating layer 4 is used to separate the first conductive circuit layer 2 and the second conductive circuit layer 3, so that the first conductive circuit layer 2 and the second conductive circuit layer 3 are not in contact" , so as to generate different electromagnetic fields by energizing the first micro-segment element 21 and the second micro-segment element 31 respectively, drive the diaphragm formed by the first conductive circuit layer 2 to vibrate, and push the surrounding air to vibrate to generate sound.

The contents disclosed above are only the preferred and feasible embodiments of this creation, and are not intended to limit the scope of the patent application of this creation. Therefore, any equivalent technical changes made by using the descriptions and drawings of this creation are included in the application for this creation. within the scope of the patent.

Z: Micro speaker structure

1: basal layer

11: Thin oxide layer

2: The first conductive circuit layer

20: The first through hole

3: The second conductive circuit layer

30: Second through hole

4: Insulation layer

40: The third through hole

S: air chamber

U: open

51: The first electrode pad

52: Second electrode pad

6: Folding structure

Claims (9)

A miniature loudspeaker structure comprising: a base layer, forming an opening; a first conductive circuit layer covering the opening, the first conductive circuit layer including a plurality of first micro-segment elements, the first conductive circuit layer doped with magnetic conductive material, and the first conductive circuit layer The surface of the circuit layer can be coated with a layer of coating; a second conductive trace layer formed over the first conductive trace layer, the second conductive trace layer including a plurality of second micro-segment elements; and An insulating layer is formed between the first conductive circuit layer and the second conductive circuit layer, and the insulating layer is used to separate the first conductive circuit layer and the second conductive circuit layer, so that the The first conductive circuit layer is not in contact with the second conductive circuit layer; Wherein, an air chamber is formed between the insulating layer and the first conductive circuit layer, and the air chamber communicates with the opening. The miniature speaker structure according to claim 1, further comprising a first electrode pad and a second electrode pad, the first electrode pad is electrically connected to the first conductive circuit layer, and the second electrode pad is electrically connected connecting the second conductive circuit layer. The micro-speaker structure according to claim 2, wherein each of the first micro-segment element and each of the second micro-segment elements comprises: The multiple segments start from a starting point and surround the starting point to form a plurality of continuous wiring metal line segments. The two ends of each metal line segment are a first electrode end and a second electrode end, wherein the starting point is a first electrode of the first micro-segment element or the second micro-segment element, and the end of the plurality of segments of the metal segment is a second electrode of the first micro-segment element or the second micro-segment element , the first electrode pad is used for collecting the first electrode ends in the plurality of segments of the metal line, and the second electrode pad is used for collecting the second electrode ends in the plurality of the metal line segments. The micro-speaker structure according to claim 1, wherein a plurality of first through holes are respectively formed on both sides of the first conductive circuit layer, and the plurality of first through holes are used to communicate the air chamber and the Open your mouth. The micro-speaker structure according to claim 1, wherein the second conductive circuit layer includes a plurality of second through holes, and the insulating layer includes a plurality of third through holes corresponding to the plurality of the second through holes, And a plurality of the second through holes and a plurality of the third through holes communicate with the air chamber. The micro-speaker structure according to claim 1, wherein the surface of the first conductive circuit layer is plated with a layer of metal or non-metallic material; wherein, the second conductive circuit layer and the two sides of the insulating layer respectively have A folded structure. The micro-speaker structure of claim 1, wherein the material of the base layer comprises silicon. The micro-speaker structure according to claim 1, wherein the materials of the first conductive circuit layer and the second conductive circuit layer include polysilicon, silicon oxide, silicon nitride or gallium arsenide, and a plurality of the first conductive circuit layers include polysilicon, silicon oxide, silicon nitride or gallium arsenide. The material of the micro-segment element and the plurality of the second micro-segment elements includes a metal with high electrical conductivity, and the metal with high electrical conductivity includes aluminum or copper. The micro-speaker structure of claim 1, wherein the material of the insulating layer comprises silicon nitride, silicon oxide or tetraethoxysilane.

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