TWM614258U - Package assembly - Google Patents

Abstract

The present invention discloses a package component, which includes: a substrate, at least one flip-chip light-emitting diode, two soldering structures and multiple resin structures. The substrate has a top surface and a bottom surface. At least two conductive circuit structures and at least two bonding pad structures are formed on the top surface, and two electrodes are formed on the bottom surface, and the two electrodes are electrically connected to the conductive circuit structure. The flip-chip light-emitting diode has two pins. Each welding structure is located between one of the welding pad structures and one of the pins, and the two pins of the flip-chip light-emitting diode are fixed to each other and electrically connected to each other through the two welding structures and the two welding pad structures. A plurality of resin structures are formed on the substrate, and each resin structure is disposed adjacent to the periphery of each bonding pad structure.

Description

Package components

The present creation relates to a packaging component, in particular to a packaging component with flip-chip light-emitting diodes and a CSP (Chip Scale Package) packaging process.

Common Mini LEDs are produced using the CSP packaging process. During the production process, due to the relatively small size of the pad structure on the circuit board, it is necessary to use a solder paste containing tin balls with a smaller particle size in order to smoothly SMT technology prints solder paste on the pad structure. However, the smaller the particle size of the solder ball, the more likely it is to oxidize; if the solder ball is oxidized, the melting point of the solder paste will become 1700°C to 1800°C. In this way, the solder paste will be difficult to reflow. . When the solder ball is oxidized, even if the solder paste can barely be reflowed, the final solder structure will not be able to connect the light-emitting diode to the solder pad firmly.

This creation discloses a package component, which is mainly used to improve the conventional technology. When the solder paste containing small-diameter solder balls is used for the LED crystal bonding operation, the quality of the soldering structure is not good after the solder paste is cured into a soldering structure , And the weak connection between the light-emitting diode and the solder pad.

One of the embodiments of the present invention discloses a package assembly, which includes: a substrate, at least one flip-chip light-emitting diode, two soldering structures, and a plurality of resin structures. The substrate has a top surface and a bottom surface, at least two conductive circuit structures and at least two pad structures are formed on the top surface, and two electrodes are formed on the bottom surface, and the two electrodes are electrically connected to the conductive circuit structure; flip-chip light-emitting two The pole body has two pins; each welding structure is located between one of the pad structure and one of the pins, and the two pins of the flip-chip light-emitting diode are through two welding structures and two pad structures Each soldering structure is fixed to each other and electrically connected. Each soldering structure is formed by curing a part of a solder; a plurality of resin structures are formed on the substrate, and each resin structure is arranged adjacent to each soldering pad structure, and each resin structure is cured by a part of the solder form.

To sum up, the package assembly of the present creation can connect the pins of the flip-chip light-emitting diode to the solder pads firmly through the design of the solder structure and the resin structure, which can improve the conventional technology. There is a problem that the solder paste of the solder balls of the particle size performs the LED crystal bonding operation, and the final LED pins cannot be firmly connected to the solder pad structure.

In order to have a better understanding of the features and technical content of this creation, please refer to the following detailed descriptions and drawings about this creation, but these descriptions and drawings are only used to illustrate this creation, not to make any claims about the scope of protection of this creation. limit.

In the following description, if it is pointed out, please refer to the specific drawing or as shown in the specific drawing, it is only used to emphasize that in the subsequent description, most of the related content appears in the specific drawing. However, it is not limited that only the specific drawings can be referred to in this subsequent description.

Please refer to Figures 1 to 5 together. Figure 1 is a schematic diagram of the packaged component created, Figure 2 is a bottom view of the packaged component created, Figure 3 is a schematic diagram of the packaged component created without packaging gel, Figure 4 This is an exploded schematic diagram of the flip-chip light-emitting diode and the substrate of the package component created by this invention. FIG. 5 is a schematic diagram of the substrate 1 of the package component 100 created by this. It should be noted that FIG. 4 is an exploded schematic diagram showing the condition that two flip-chip light-emitting diodes are not soldered on the substrate.

The package assembly 100 of the present creation includes: a substrate 1, a solder resist structure 2, two flip chip light-emitting diodes 3, two soldering structures 4, a packaging gel 5, and a Zener diode 6 And multiple resin structures7. It should be noted that in different embodiments, the package assembly 100 may also include only a single flip-chip light emitting diode 3, and the package assembly 100 may not be provided with the solder resist structure 2, the packaging glue 5, and At least one of the Zener diodes 6.

The substrate 1 has a top surface 11 and a bottom surface 12. Three conductive circuit structures, four bonding pad structures 16 and two auxiliary bonding pad structures 17 are formed on the top surface 11. The three conductive circuit structures are respectively defined as a first conductive circuit structure 13, a second conductive circuit structure 14 and a third conductive circuit structure 15. Two ends of the first conductive circuit structure 13 are connected to two pad structures 16, one end of the second conductive circuit structure 14 is connected to a pad structure 16, and the second conductive circuit structure 14 is also connected to an auxiliary pad structure 17, the third One end of the conductive circuit structure 15 is connected to another bonding pad structure 16, and the third conductive circuit structure 15 is also connected to another auxiliary bonding pad structure 17. The four soldering pad structures 16 are designed to connect to the four pins 31 of the two flip-chip light-emitting diodes 3, and the two soldering pad structures 16 are connected through the two ends of the first conductive circuit structure 13. Two flip-chip light-emitting diodes 3 can be electrically connected in series. Of course, in different embodiments, the number of conductive circuit structures and the connection relationship between the conductive circuit structure and the pad structure 16 can be changed to make the two flip-chip light-emitting diodes 3 pass through multiple conductive circuits. The structures are connected in parallel.

It is worth mentioning that through the design of electrically connecting two flip-chip light emitting diodes 3 in series, the package assembly 100 can be applied to high-voltage products. The high voltage refers to 5 volts to 12 volts. In other words, when the package assembly 100 of the present invention is applied to a high-voltage product, two flip-chip light-emitting diodes 3 may be electrically connected in series through a plurality of conductive circuit structures.

Two electrodes 18 are formed on the bottom surface 12 of the substrate 1, and the two electrodes 18 are respectively electrically connected to a plurality of conductive circuit structures. The respective electrodes 18 may be electrically connected through related conductive structures (such as copper pillars, etc.) provided in the substrate 1, for example. The material of the substrate 1 is, for example, BT, CEM-1, CEM-3, FR4, etc., which can be selected according to requirements and are not limited here. Regarding the size and appearance of the substrate 1, it is not limited to those shown in the figure, and it can be selected according to the size of the flip-chip light-emitting diode 3.

In practical applications, each flip-chip light emitting diode 3 can be a Mini LED, and the length L of the package component 100 is not more than 1.5 mm (mm), and the width W1 of the package component 100 is not more than 1.5 mm (mm) , The height H of the package component 100 is not greater than 0.7 millimeters (mm), and the distance W2 between the two pad structures 16 (as shown in FIG. 5) may be between 25 microns (μm) and 150 microns (μm) Preferably, the distance W2 between the two bonding pad structures 16 is between 80 micrometers (μm) and 120 micrometers (μm). Of course, the size of the package assembly 100 and the distance W2 between the two bonding pad structures 16 can be adjusted according to the type and size of the flip-chip light emitting diode 3, and are not limited to the above examples.

The solder resist structure 2 is arranged on the top surface 11 of the substrate 1, and the solder resist structure 2 covers the conductive circuit structure, and each solder pad structure 16 is exposed to the solder resist structure 2, and the solder resist structure 2 can reflect the flip chip light emitting diode 3 The light beam emitted. The solder mask 2 referred to here will not interact with the solder used to solder and fix the flip-chip light-emitting diode 3 to the substrate 1. In practical applications, the flip-chip light-emitting diode 3 is soldered. Before being fixed to the substrate 1, the solder mask 2 may be formed before the top surface 11 of the substrate 1. In this way, the flow direction of the molten solder can be ensured, and the random flow of the solder can prevent the flip chip light emitting diode. The positive electrode and the negative electrode of the body 3 are electrically connected.

Each flip chip light emitting diode 3 has two pins 31 (as shown in FIG. 4). Each welding structure 4 (shown in Figures 1 and 3) is located between one of the welding pad structures 16 and one of the pins 31, and the two pins 31 of the flip-chip light-emitting diode 3 are welded by two The structure 4 and the two pad structures 16 are fixed to each other and are electrically connected. The soldering structure 4 referred to here is formed by solidifying a part of the solder.

The encapsulant 5 is disposed on the top surface 11, and the encapsulant 5 covers the flip-chip light-emitting diode 3 and the Zener diode 6. The encapsulant 5 is mainly used to protect the flip-chip light-emitting diodes 3 and the Zener diode 6 and other components arranged on the substrate 1, and the shape and size of the encapsulant 5 can be changed according to requirements. The material of the encapsulant 5 can be, for example, silicon glue, epoxy, etc., which is not limited here. It is worth mentioning that in the embodiment where the flip-chip light-emitting diode 3 emits a blue light beam, light conversion particles may be arranged in the encapsulant 5, and the blue light beam emitted by the flip-chip light-emitting diode 3 It can be converted into white light by light conversion particles.

The Zener diode 6 is connected to the two auxiliary pad structures 17, and the Zener diode 6 and the flip chip light emitting diode 3 are electrically connected in series. The Zener diode 6 is mainly used to protect the flip chip light emitting diode 3. Regarding the installation position and number of the Zener diode 6, it is not limited to what is shown in the figure.

Please refer to FIG. 6, which shows a schematic diagram of the package assembly 100 of the present creation without the package compound 5 and the flip-chip light emitting diode 3 is detached. As shown in the figure, there is a resin structure 7 around each bonding pad structure 16, each resin structure 7 is formed on the substrate 1, and each resin structure 7 is generally arranged around the periphery of each bonding structure 4. Specifically, each resin structure 7 is the material left on the substrate 1 after the solder is solidified when the flip-chip light-emitting diode 3 is soldered and fixed to the two solder pad structures 16 with a solder; that is, the solder After melting and solidification, part of the material in the solder solidifies to form the solder structure 4, and part of the material in the solder flows onto the substrate 1 and solidifies to form the resin structure 7.

Furthermore, please refer to Figures 7 to 15 together, which show a simple schematic diagram of the manufacturing process of the packaged component of this creation. In these schematic diagrams, it is only used to show the manufacturing process of the packaged component of this creation. Among them, the cross-sectional relationship between the substrate, the multiple bonding pad structure, the solder mask structure, and the flip-chip light-emitting diode.

As shown in FIG. 7, first, a plurality of pad structures 16 are formed on the top surface 11 of the substrate 1. The multiple bonding pad structures 16 may be arranged in groups of two at intervals, and the two adjacent bonding pad structures 16 are used to connect to the two pins of the same flip-chip light-emitting diode. As shown in FIG. 8, next, a solder resist structure 2 is formed on the top surface 11 of the substrate 1 so that the solder resist structure 2 does not cover any solder pad structure 16.

Then, as shown in FIG. 9, a steel plate A is placed on one side of the substrate 1, and the multiple through holes A1 of the steel plate A are aligned with the multiple pad structures 16. As shown in FIG. 10, after the steel plate A is set on one side of the substrate 1, a scraper is used to fill the solder D in the groove formed by the sidewall of the through hole A1 of each steel plate A and the solder pad structure 16. The solder D is correspondingly provided on each solder pad structure 16. As shown in FIG. 11, the solder D contains a solder ball D1 and is also doped with epoxy D2. Preferably, the weight percentage of the resin D2 in the solder D is 5%-25%. It should be noted that the solder D referred to herein may not include flux or flux, and is not limited herein.

In the embodiment where the flip chip light emitting diode 3 is a Mini LED, the distance W2 between the two bonding pad structures 16 adjacent to each other is between 60 micrometers (μm) to 85 micrometers (μm), and the solder D The particle size of the solder balls D1 contained in the D1 is approximately 8 micrometers (μm); since the solder D is mixed with resin D2, and each solder ball D1 is basically covered by the resin D2, the solder ball D1 is not easy to directly interact with the air. Contact, and the solder ball D1 will not be prone to oxidation. Specifically, the solder D is doped with solder balls D1 with a D50 of 8 micrometers (μm), that is to say, 50% of all the solder balls D1 doped in the solder D are solder balls D1. The diameter is not more than 8 microns.

In other words, when the particle size of the solder ball D1 contained in the solder D is less than 10 microns (μm), if the resin D2 is not added to the solder D, the solder ball D1 will directly contact the air, and the solder ball D1 will have an oxidation problem. If the solder ball D1 has an oxidation problem, the melting point of the solder D will be as high as 1700 to 1800 degrees, and the solder D will be difficult to reflow. Therefore, by mixing the resin D2 into the solder D, the problem of oxidation of the solder ball D1 with a small particle size (particle size less than 10 microns) contained in the solder D can be greatly reduced, so that the solder D can proceed smoothly. Reflow operation.

As shown in Figure 9, it should be particularly noted that in the embodiment where the flip-chip light-emitting diode 3 is a Mini LED, the perforation A1 of the steel plate A will correspond to the size of each pad structure 16, while the steel plate A The width W3 of the perforation A1 will be between 60 microns (μm) and 85 microns (μm). Therefore, if the surface mount technology (SMT) is used, the internal particle size is 20 microns (μm) or more When printing the solder paste of the solder balls, the difference between the particle size of the solder balls and the width W3 of the perforation A1 is too small. Therefore, it may happen that the number of solder balls contained in the solder paste filled in the perforation A1 is insufficient. . When the number of solder balls contained in the solder paste filled in the through hole A1 is insufficient, after the reflow operation, a solder structure formed between the flip chip light emitting diode 3 and the solder pad structure 16 will occur , The problem that the two cannot be firmly connected to each other.

As shown in FIG. 12, after each solder pad structure 16 is coated with solder D, and the steel plate A is removed, then the two pins 31 of each flip-chip light-emitting diode 3 are placed on the two coatings. On the pad structure 16 covered with solder D. Then, as shown in FIG. 13, the substrate 1 is sent to the reflow furnace. When the temperature of the environment where the substrate 1 is located rises to the melting point of the solder, the solder will appear to be molten. When the solder D is molten, the specific gravity of tin is greater than the specific gravity of the resin. Therefore, the tin in the molten solder DX will displace the resin, and the displaced resin will move along the pad structure 16 to the substrate 1. The tin will stay on the surface of the pad structure 16 opposite to the substrate 1.

As shown in Figures 14 and 15, when the substrate 1 passes through the reflow furnace, the tin and part of the resin located between the pad structure 16 and the pins 31 will solidify into the solder structure 4 and flow The resin to the substrate 1 will be cured into the resin structure 7, and then the encapsulant 5 is made to cover each flip-chip light-emitting diode 3 and cover the solder mask 2; after the encapsulant 5 is formed, the next step is The packaging glue 5 and the substrate 1 are cut at the same time to form a plurality of packaging components 100.

Please refer to FIGS. 1 and 2 again. In the package assembly 100 manufactured through the above-mentioned manufacturing process, the four substrate side surfaces 19 included in the substrate 1 will be flush with the four package side surfaces 51 of the package compound 5. Among them, each substrate side surface 19 is connected to the top surface 11 and the bottom surface 12 of the substrate 1, each package side surface 51 is connected to a package top surface 52 of the package compound 5, and the package top surface 52 and the four package side surfaces 51 are packages. The light-emitting surface of the component 100.

To sum up, the package component of this creation, through the design of adding resin to the solder containing small particle size (less than 10 microns) solder balls, can prevent the solder from being oxidized during the manufacturing process, and can ensure The solder can be smoothly reflowed, and the quality of the solidified solder can be ensured, thereby ensuring that the pins of the flip-chip light-emitting diode are firmly connected to the solder pad structure.

The above descriptions are only the preferred and feasible embodiments of this creation, which do not limit the scope of the creation of this creation. Therefore, all equivalent technical changes made using this creation specification and schematic content are included in the scope of protection of this creation. .

100: Package components 1: substrate 11: Top surface 12: Bottom 13: The first conductive circuit structure 14: Second conductive circuit structure 15: The third conductive circuit structure 16: Pad structure 17: Auxiliary pad structure 18: Electrode 19: substrate side 2: Anti-welding structure 3: flip chip light emitting diode 31: Pin 4: Welding structure 5: Encapsulation colloid 51: package side 52: Package top surface 6: Zener diode 7: Resin structure L: length W1: width W2: Spacing W3: width H: height A: Steel plate A1: Piercing D: Solder D1: Tin ball D2: Resin DX: molten solder

Figure 1 is a schematic diagram of the packaged components created.

Figure 2 is a bottom view of the packaged components created.

Figure 3 is a schematic diagram of the package component created without the package colloid.

FIG. 4 is an exploded schematic diagram of the flip-chip light-emitting diode and the substrate of the package assembly created.

Figure 5 is a schematic diagram of the substrate of the package assembly created.

Fig. 6 is a schematic diagram of the packaged component created without the package colloid and the flip-chip light emitting diode is detached.

Figures 7 to 10 are schematic diagrams of the production process of the packaged component created.

Fig. 11 is a partial enlarged schematic diagram of Fig. 10.

Figures 12 to 14 are schematic diagrams of the production process of the packaged component created.

Fig. 15 is a partial enlarged schematic diagram of Fig. 14.

1: substrate

11: Top surface

13: The first conductive circuit structure

14: Second conductive circuit structure

15: The third conductive circuit structure

16: Pad structure

17: Auxiliary pad structure

19: substrate side

2: Anti-welding structure

4: Welding structure

6: Zener diode

7: Resin structure

Claims (10)

A packaged component, which contains: A substrate having a top surface and a bottom surface, the top surface is formed with at least two conductive circuit structures and at least two pad structures, the bottom surface is formed with two electrodes, and the two electrodes are connected to the conductive Electrical connection of circuit structure; At least one flip chip light emitting diode, which has two pins; Two soldering structures, each of the soldering structures is located between one of the soldering pad structures and one of the pins, and the two pins of the flip-chip light-emitting diode pass through two soldering The welding structure and the two welding pad structures are fixed to each other and electrically connected, and each of the welding structures is formed by solidifying a part of a solder; A plurality of resin structures are formed on the substrate, and each of the resin structures is arranged adjacent to each of the solder pad structures, and each of the resin structures is formed by curing a part of the solder. The package assembly according to claim 1, wherein the distance between the two bonding pad structures is between 25 micrometers (μm) and 150 micrometers (μm). The package assembly according to claim 2, wherein the distance between the two bonding pad structures is between 80 micrometers (μm) and 120 micrometers (μm). The package assembly according to claim 1, wherein the package assembly further includes a solder resist structure, the solder resist structure is disposed on the top surface of the substrate, and the solder resist structure covers the conductive circuit Structure, each of the solder pad structures is exposed to the solder mask structure, and the solder mask structure can reflect the light beam emitted by the flip chip light emitting diode. The packaging component according to claim 1, wherein the packaging component further comprises a packaging glue, and the packaging glue covers the flip-chip light emitting diode. The packaging assembly according to claim 5, wherein a plurality of light conversion particles are arranged in the packaging colloid, the flip-chip light-emitting diode can emit a blue light beam, and the blue light emitted by the flip-chip light-emitting diode The light beam can be converted into white light by the light conversion particles. The package assembly according to claim 5, wherein the substrate includes four substrate side surfaces, and the four substrate side surfaces are respectively connected to the top surface and the bottom surface, and the packaging compound includes a package top surface and Four package side surfaces, each of the package side surfaces is connected to the package top surface, and any one of the substrate side surfaces is flush with the adjacent package side surface. The packaging component of claim 5, wherein the length of the packaging component is not greater than 1.5 millimeters (mm), the width of the packaging component is not greater than 1.5 millimeters (mm), and the height of the packaging component is not greater than 0.7 millimeters (mm). The package assembly according to claim 5, wherein the package assembly further includes a Zener diode, the substrate further forms two auxiliary pad structures on the top surface, the Zener diode and the two The auxiliary pad structures are connected, the Zener diode is electrically connected in series with the flip-chip light-emitting diode, and the Zener diode is covered by the packaging gel. The package assembly according to claim 1, wherein the package assembly includes two flip-chip light-emitting diodes, and three conductive circuit structures and four flip-chip light-emitting diodes are formed on the top surface of the substrate. Soldering pad structure and four of the soldering structures, one of the conductive circuit structures is connected to two of the soldering pad structures at both ends, and one end of the other two conductive circuit structures is connected to the other two soldering pad structures , The four pins included in the two flip-chip light-emitting diodes are connected to the four bonding pad structures through the four welding structures, and the two flip-chip light-emitting diodes The pole bodies are electrically connected in series.

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