TWM613270U - Etching device with pre-etching process - Google Patents

Etching device with pre-etching process Download PDF

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Publication number
TWM613270U
TWM613270U TW110202255U TW110202255U TWM613270U TW M613270 U TWM613270 U TW M613270U TW 110202255 U TW110202255 U TW 110202255U TW 110202255 U TW110202255 U TW 110202255U TW M613270 U TWM613270 U TW M613270U
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Taiwan
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etching
nozzle
circuit board
nozzles
transfer
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TW110202255U
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Chinese (zh)
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蘇勝義
喬鴻培
呂理榕
蘇紹君
鍾添達
黃世達
巫坤星
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揚博科技股份有限公司
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Publication of TWM613270U publication Critical patent/TWM613270U/en

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Abstract

本新型為一種具有預蝕刻製程的蝕刻裝置,其具有併列設置的一量測機構、一整平機構、一蝕刻機構及一貫穿位在各機構內部的移送機構,該量測機構及該整平機構對待加工的電路板進行量測並以預蝕刻製程使電路板的銅箔厚度相同,該蝕刻機構以第一蝕刻部對電路板進行粗略蝕刻處理,以第二蝕刻部所噴出特定比例的蝕刻液進行較為細緻的蝕刻處理,並以所設的吸取部將電路板的蝕刻液進行去除處理,藉以達到提高蝕刻因子的功效。The model is an etching device with a pre-etching process. It has a measuring mechanism, a leveling mechanism, an etching mechanism, and a transfer mechanism penetrating inside each mechanism. The measuring mechanism and the leveling mechanism are arranged side by side. The mechanism measures the circuit board to be processed and uses the pre-etching process to make the copper foil thickness of the circuit board the same. The etching mechanism uses the first etching part to roughly etch the circuit board, and the second etching part sprays a specific proportion of etching The liquid is subjected to a more detailed etching treatment, and the etching liquid of the circuit board is removed by the suction part provided, so as to achieve the effect of increasing the etching factor.

Description

具有預蝕刻製程的蝕刻裝置Etching device with pre-etching process

本新型為印刷電路板的製造設備,尤指一種運用蝕刻技術將導電材料予以移除以製成線路或圖案的蝕刻裝置。 The new type is a manufacturing equipment for printed circuit boards, especially an etching device that uses etching technology to remove conductive materials to form lines or patterns.

現有技術的電路板,其構造在基板上設置有具導電的銅箔,基板的銅箔上在欲形成線路或圖案處塗佈有作為遮罩層的阻劑膜,沒有被阻劑膜阻隔的銅箔導電層將被蝕刻液予以去除,最後位在基板上為具有導電功能的線路或圖案。 The circuit board of the prior art is constructed with a conductive copper foil on the substrate, and the copper foil of the substrate is coated with a resist film as a mask layer at the place where the circuit or pattern is to be formed, without being blocked by the resist film The conductive layer of the copper foil will be removed by the etching solution, and finally on the substrate is a circuit or pattern with conductive function.

為了提供現有各種高科技產品的使用,電路板的體積逐漸縮小並設置有較多的線路,使得所設置線路的寬度或各線路之間的間隔大幅縮小,因此在運用蝕刻工程進行線路或圖案加工時,蝕刻裝置以蝕刻液噴灑在基板的銅箔上,蝕刻液與未受到阻劑膜遮擋保護的銅箔進行蝕刻加工,由於蝕刻液的粒徑大,無法將線路之間間隔極小的線路或圖案進行加工,導致有難以提升蝕刻因子(E/F etch factor)的缺點存在。 In order to provide the use of various existing high-tech products, the volume of the circuit board is gradually reduced and more lines are provided, so that the width of the line or the interval between the lines is greatly reduced. Therefore, the etching process is used for line or pattern processing. When the etching device sprays the etching liquid on the copper foil of the substrate, the etching liquid and the copper foil that are not shielded and protected by the resist film are etched. Due to the large particle size of the etching liquid, it is impossible to divide the lines or the lines with extremely small distances between the lines. The pattern is processed, resulting in the disadvantage that it is difficult to increase the etch factor (E/F etch factor).

為解決此缺點,現有技術公開有發明第TWI539876號「蝕刻方法及蝕刻裝置」專利案,其技術手段具備有由1流體噴嘴噴射蝕刻液而吹附在蝕刻對象物的蝕刻對象面,將蝕刻對象面進行蝕刻的第1蝕刻工程,以及將蝕刻液與氣體混合後由2流體噴嘴噴射,將蝕刻液吹附在第1蝕刻工程中所被蝕刻的蝕刻對象面,以達到將蝕刻對象面進一步蝕刻的第2蝕刻工程,第2蝕刻工程具有更為微小液滴的蝕刻液,藉由較第1蝕刻工程更強的衝擊力吹附在蝕刻對 象面,因此在有效的合併使用1流體噴嘴所噴射出的蝕刻液及2流體噴嘴所噴射出的由蝕刻液與氣體混合的混合液後,可適當的提升蝕刻因子。 In order to solve this shortcoming, the prior art discloses Invention No. TWI539876 "Etching Method and Etching Apparatus" patent. Its technical means is to spray an etching solution from a single fluid nozzle and blow it onto the etching target surface of the etching target. The first etching process in which the surface is etched, and the etching liquid and gas are mixed and sprayed from a 2-fluid nozzle, and the etching liquid is blown onto the etching target surface etched in the first etching process to further etch the etching target surface In the second etching process, the second etching process has an etching solution with a smaller droplet, which is blown on the etching pair by a stronger impact than the first etching process. The image surface, therefore, after effectively combining the etching liquid sprayed by the 1-fluid nozzle and the mixture of the etching liquid and the gas sprayed by the 2-fluid nozzle, the etching factor can be appropriately increased.

前述現有已公開發明案的技術手段雖可提升蝕刻因子,然而現有電路板為因應高科技產品的需要,所蝕刻製作的線路或圖案朝向細微化的趨勢,因此針對蝕刻因子的提升有再改善的需要。 Although the technical means of the aforementioned existing disclosed inventions can increase the etching factor, the existing circuit boards respond to the needs of high-tech products, and the etched lines or patterns tend to be miniaturized. Therefore, there are further improvements for the increase in the etching factor. need.

本新型為解決前述現有技術所存在的問題及缺點,所運用的技術手段先將待加工的電路板上的銅箔以預蝕刻製程使銅箔具有相同厚度,再以第一蝕刻部對電路板進行粗略的蝕刻處理,接著以第二蝕刻部所噴出的第二蝕刻液液體量相對於第一噴嘴及第二噴嘴所噴射出總量的比例佔55%以上,對電路板銅箔進行較為細緻的蝕刻處理,可獲得較高的蝕刻因子。 In order to solve the problems and shortcomings of the aforementioned prior art, the present invention uses a pre-etching process for the copper foil on the circuit board to be processed to make the copper foil have the same thickness, and then the first etching part is applied to the circuit board. A rough etching process is carried out, and then the ratio of the amount of the second etching liquid sprayed by the second etching part to the total amount sprayed by the first nozzle and the second nozzle accounts for more than 55%, and the copper foil of the circuit board is more detailed The etching treatment can obtain a higher etching factor.

本新型為了可達到前述的創作目的,所運用的技術手段在於提供一種具有預蝕刻製程的蝕刻裝置,其包括有一移送機構、一量測機構、一整平機構及一蝕刻機構,該移送機構貫穿位在依序排列的該量測機構、該整平機構及該蝕刻機構內部;該移送機構可用於將一待加工的電路板予以移送,其具有一機架,機架上設有相互平行設置的複數下傳送桿體,各該下傳送桿體形成為一第一橫向移送位置,機架另設有相互平行設置的複數上傳送桿體,各該上傳送桿體形成為一第二橫向移送位置且相對的位在該蝕刻機構,該第一橫向移送位置與該第二橫向移送位置之間形成有一可供電路板移送的間隔;該量測機構包括有至少一感測器並安在一架體,該感測器可對位在第一橫向移送位置的電路板的銅箔厚度進行量測,並將量測後的訊息傳送至一運算處理單元; 該整平機構具有一預蝕刻器及複數噴嘴,該預蝕刻器及各該噴嘴為對應於移送機構的運送路徑,該預蝕刻器與該運算處理單元連接,該運算處理單元可控制各該噴嘴噴出的蝕刻液,而對電路板銅箔表面進行預蝕刻;該蝕刻機構具有一蝕刻處理室,該蝕刻處理室一中空體且底部具有一槽體,該槽體內盛裝有蝕刻液,該蝕刻處理室的內部安裝有一第一蝕刻部、一第二蝕刻部及一吸取部,該第一蝕刻部及第二蝕刻部依電路板移送方向併列設置,該吸取部具有複數個吸嘴,各吸嘴為相鄰於該第一蝕刻部及該第二蝕刻部設置,該吸嘴具有至少一吸入口且對應於移送通過的電路板上方表面,以去除位在電路板上的蝕刻液;該第一蝕刻部具有一第一噴嘴,第一噴嘴噴出有第一蝕刻液,該第二蝕刻部具有一第二噴嘴,該第二噴嘴噴射出有第二蝕刻液,第二蝕刻液經泵浦加壓及以高壓導入空氣後經由管路輸送至該第二噴嘴噴射出,第二噴嘴所噴射出的第二蝕刻液液體量相對於第一噴嘴及第二噴嘴所噴射出總量的比例為佔55%以上。 In order to achieve the foregoing creative purpose, the technical means used in the present invention is to provide an etching device with a pre-etching process, which includes a transfer mechanism, a measurement mechanism, a leveling mechanism and an etching mechanism, and the transfer mechanism penetrates It is located inside the measuring mechanism, the leveling mechanism and the etching mechanism arranged in sequence; the transfer mechanism can be used to transfer a circuit board to be processed, it has a frame, and the frame is arranged parallel to each other A plurality of lower conveying rods, each of the lower conveying rods is formed as a first lateral transfer position, the frame is additionally provided with a plurality of upper conveying rods arranged parallel to each other, each of the upper conveying rods is formed as a second lateral transfer position and Oppositely located at the etching mechanism, a space for circuit board transfer is formed between the first lateral transfer position and the second lateral transfer position; the measurement mechanism includes at least one sensor and is mounted on a frame , The sensor can measure the thickness of the copper foil of the circuit board at the first lateral transfer position, and send the measured information to an arithmetic processing unit; The leveling mechanism has a pre-etcher and a plurality of nozzles, the pre-etcher and each of the nozzles are corresponding to the conveying path of the transfer mechanism, the pre-etcher is connected to the arithmetic processing unit, and the arithmetic processing unit can control each of the nozzles The etching liquid is sprayed out to pre-etch the surface of the copper foil of the circuit board; the etching mechanism has an etching processing chamber, the etching processing chamber has a hollow body and a groove at the bottom, and the groove is filled with the etching liquid. A first etching part, a second etching part and a suction part are installed inside the chamber. The first etching part and the second etching part are arranged side by side according to the transfer direction of the circuit board. The suction part has a plurality of suction nozzles, and each suction nozzle Is arranged adjacent to the first etching part and the second etching part, the suction nozzle has at least one suction port and corresponds to the upper surface of the circuit board to be transferred to remove the etching liquid on the circuit board; the first The etching part has a first nozzle, the first nozzle sprays a first etching solution, the second etching part has a second nozzle, the second nozzle sprays a second etching solution, and the second etching solution is pumped and pressurized And the air is introduced at high pressure and delivered to the second nozzle through the pipeline, and the ratio of the amount of the second etching liquid sprayed by the second nozzle to the total amount sprayed by the first nozzle and the second nozzle is 55 %the above.

所述之具有預蝕刻製程的蝕刻裝置,其中該第一噴嘴具有複數第一上噴嘴及複數第一下噴嘴,第一蝕刻液經泵浦加壓後經由管路輸送至各該第一上噴嘴及各該第一下噴嘴噴射出,第一蝕刻液的液滴可對電路板的銅箔進行粗略的蝕刻處理,第二噴嘴具有複數第二上噴嘴及複數第二下噴嘴,第二蝕刻液經泵浦加壓及以高壓導入空氣後經由管路輸送至各該第二上噴嘴及各該第二下噴嘴噴射出,第二蝕刻液為較微細化的液滴以進行細緻的蝕刻處理。 The etching device with a pre-etching process, wherein the first nozzle has a plurality of first upper nozzles and a plurality of first lower nozzles, and the first etching liquid is pumped and pressurized and then delivered to each of the first upper nozzles through a pipeline And each of the first lower nozzles ejects, the droplets of the first etching solution can roughly etch the copper foil of the circuit board, the second nozzle has a plurality of second upper nozzles and a plurality of second lower nozzles, and the second etching solution After being pumped and pressurized and air is introduced at a high pressure, it is delivered to each of the second upper nozzles and each of the second lower nozzles and sprayed out through a pipeline. The second etching liquid is a finer droplet for detailed etching treatment.

本新型藉由前述技術手段的運用,待加工的電路板經量測機構及預蝕刻機構的預蝕刻製程後,可使電路板上的銅箔厚度達到均勻相同,移送至蝕刻機構經第一蝕刻部的第一噴嘴噴出的第一蝕刻液進行粗略的蝕刻處理,再進入第二蝕刻部,第二蝕刻部的第二噴嘴噴出的第二蝕刻液液體量相對於第 一噴嘴及第二噴嘴所噴射出總量的比例佔55%以上,第二蝕刻液具有微小的液滴且可形成具有更強衝擊力,以達到使蝕刻因子(E/F)大幅增加。 Through the use of the aforementioned technical means, the circuit board to be processed after the pre-etching process of the measuring mechanism and the pre-etching mechanism can make the thickness of the copper foil on the circuit board uniform and the same, and then it is transferred to the etching mechanism for the first etching The first etching solution sprayed from the first nozzle of the second etching portion undergoes a rough etching process, and then enters the second etching portion. The amount of the second etching solution sprayed from the second nozzle of the second etching portion is relative to the first etching solution. The proportion of the total ejected by one nozzle and the second nozzle accounts for more than 55%. The second etching liquid has tiny droplets and can be formed with stronger impact force, so as to achieve a substantial increase in the etching factor (E/F).

10:移送機構 10: Transfer mechanism

11:下傳送桿體 11: Lower transmission rod

12:上傳送桿體 12: Upper transmission rod

20:量測機構 20: Measuring mechanism

21:感測器 21: Sensor

30:整平機構 30: Leveling mechanism

31:預蝕刻器 31: Pre-etcher

32:噴嘴 32: Nozzle

40:蝕刻機構 40: Etching mechanism

400:槽體 400: tank

401:蝕刻液 401: Etching Solution

41:第一蝕刻部 41: The first etching part

410:第一噴嘴 410: The first nozzle

411:第一上噴嘴 411: The first upper nozzle

412:第一下噴嘴 412: The first nozzle

42:第二蝕刻部 42: The second etching part

420:第二噴嘴 420: second nozzle

421:第二上噴嘴 421: The second upper nozzle

422:第二下噴嘴 422: The second nozzle

43:吸取部 43: Absorption Department

431:吸嘴 431: Nozzle

50:電路板 50: circuit board

51:銅箔 51: copper foil

510:線路 510: Line

511:突部 511: protruding part

52:基板 52: substrate

53:阻劑膜 53: Resist film

圖1為本新型的配置示意圖。 Figure 1 is a schematic diagram of the new configuration.

圖2為本新型之量測機構與整平機構的放大示意圖。 Figure 2 is an enlarged schematic diagram of the new measuring mechanism and leveling mechanism.

圖3為本新型之待加工電路板示意圖。 Figure 3 is a schematic diagram of a new type of circuit board to be processed.

圖4為本新型之待加工電路板位在移送機構與量測機構的示意圖。 Figure 4 is a schematic diagram of the new type of circuit board to be processed in the transfer mechanism and the measurement mechanism.

圖5為本新型之蝕刻機構放大示意圖。 Figure 5 is an enlarged schematic diagram of the new etching mechanism.

圖6為本新型之整平機構加工後電路板的示意圖。 Figure 6 is a schematic diagram of the circuit board processed by the new leveling mechanism.

圖7為電路板的線路或圖案位置施作有阻膜劑的示意圖。 Fig. 7 is a schematic diagram of a circuit board with a film resist applied to a circuit or pattern position.

圖8為經本新型之蝕刻機構蝕刻後之電路板的示意圖。 FIG. 8 is a schematic diagram of the circuit board after being etched by the etching mechanism of the present invention.

參看圖1所示,本新型為具有預蝕刻製程的蝕刻裝置,其包括有一移送機構10、一量測機構20、一整平機構30及一蝕刻機構40,該移送機構10為貫穿設置在依序排列的該量測機構20、該整平機構30及該蝕刻機構40內部,待加工的電路板50位在該移送機構10上並朝向該量測機構20、該整平機構30及該蝕刻機構40移動並進行加工。 Referring to Figure 1, the present invention is an etching device with a pre-etching process, which includes a transfer mechanism 10, a measurement mechanism 20, a leveling mechanism 30, and an etching mechanism 40. The transfer mechanism 10 is installed in Yi The measuring mechanism 20, the leveling mechanism 30, and the etching mechanism 40 are arranged in sequence, and the circuit board 50 to be processed is positioned on the transfer mechanism 10 and facing the measuring mechanism 20, the leveling mechanism 30, and the etching mechanism. The mechanism 40 moves and performs processing.

配合參看圖2、圖3及圖4所示,該移送機構10為設置在一機架上,該機架為一現有技術的架體,圖中未示出。待加工的電路板50可經由該移送機構10予以移送,圖中所示的移送機構10為現有技術可用以移送待加工之電路板50的其中一種實施例,其構造概略在機架上設有複數的下傳送桿體11,各 該下傳送桿體11為相互平行設置,使得待加工之電路板50位在一平面移送,各該下傳送桿體11形成為一第一橫向移送位置。參看圖5所示,在相對於該蝕刻機構40的機架上設有複數的上傳送桿體12,各該上傳送桿體12為相互平行設置位在另一移送平面,各該上傳送桿體12形成為一第二橫向移送位置,各該下傳送桿體11與各該上傳送桿體12之間形成有一間隔,電路板50可位在第一橫向移送位置的各該下傳送桿體11上方移動,或位在各該上傳送桿體12與各該下傳送桿體11之間形成的間隔空間移送。 As shown in FIGS. 2, 3 and 4, the transfer mechanism 10 is arranged on a frame, which is a frame of the prior art, which is not shown in the figure. The circuit board 50 to be processed can be transferred through the transfer mechanism 10. The transfer mechanism 10 shown in the figure is one of the embodiments that can be used to transfer the circuit board 50 to be processed in the prior art, and its structure is roughly arranged on the frame Multiple lower transmission rods 11, each The lower conveying rods 11 are arranged in parallel to each other, so that the circuit board 50 to be processed is transferred in a plane, and each of the lower conveying rods 11 is formed as a first lateral transfer position. Referring to FIG. 5, a plurality of upper conveying rods 12 are provided on the frame relative to the etching mechanism 40, and each of the upper conveying rods 12 is arranged in parallel with each other on another conveying plane, and each of the upper conveying rods The body 12 is formed as a second lateral transfer position, a gap is formed between each of the lower transfer rod bodies 11 and each of the upper transfer rod bodies 12, and the circuit board 50 can be located in each of the lower transfer rod bodies in the first lateral transfer position. 11 moves upward, or moves in the space formed between each of the upper conveying rods 12 and each of the lower conveying rods 11.

該量測機構20包括有至少一感測器21,可設置在一現有技術的架體,各該感測器21的偵測方向為朝向移送機構10,如圖中所示的具體實施例為向下偵測所通過的電路板50,電路板50在通過量測機構20時,感測器21可針對電路板50的銅箔51位在各不同位置處的厚度進行量測,量測後的訊息傳送至一運算處理單元,該運算處理單元為現有技術,故圖中未示出。 The measuring mechanism 20 includes at least one sensor 21, which can be set on a frame of the prior art, and the detection direction of each sensor 21 is toward the transfer mechanism 10. The specific embodiment shown in the figure is Downward detection of the circuit board 50 passed. When the circuit board 50 passes the measuring mechanism 20, the sensor 21 can measure the thickness of the copper foil 51 of the circuit board 50 at various positions. The message is sent to an arithmetic processing unit, which is a prior art, so it is not shown in the figure.

該量測機構20的其中一種具體實施例,可為現有技術所使用的射頻式測銅儀,各該感測器21可投射出射頻及接收射頻,所投射出的該等射頻範圍為相互重疊,並可完全覆蓋電路板50的表面,以量測銅箔51的厚度。電路板50在基板上所設置的銅箔51,由於銅箔51的厚度在各不同區域並非為完全相同,如圖3所示,銅箔51具有複數突部511,各該突部511區域的厚度較其它區域處的厚度為厚,電路板50置放在移送機構10上並運送至量測機構20時,各感測器21對電路板50的銅箔51的各區域進行量測,量測機構20可偵測取得對應於各該突部511處的位置訊息。 One of the specific embodiments of the measuring mechanism 20 may be a radio frequency copper measuring instrument used in the prior art. Each of the sensors 21 can project and receive radio frequencies, and the projected radio frequency ranges overlap each other. , And can completely cover the surface of the circuit board 50 to measure the thickness of the copper foil 51. The thickness of the copper foil 51 provided on the circuit board 50 on the substrate is not exactly the same in different areas. As shown in FIG. 3, the copper foil 51 has a plurality of protrusions 511, and the area of each protrusion 511 is The thickness is thicker than the thickness in other areas. When the circuit board 50 is placed on the transfer mechanism 10 and transported to the measuring mechanism 20, each sensor 21 measures each area of the copper foil 51 of the circuit board 50. The detecting mechanism 20 can detect and obtain the position information corresponding to each of the protrusions 511.

該整平機構30,其具有一預蝕刻器31及複數噴嘴32,該預蝕刻器31對應於移送機構10的運送路徑,各該噴嘴32設置在該預蝕刻器31並朝向位在移送機構10的電路板50,該預蝕刻器31所安裝的噴嘴32數量可依據需要進行調整安裝設置,該整平機構30的預蝕刻器31可與該運算處理單元連接,可將量 測機構20所偵測到電路板50的突部511位置的訊息傳送至整平機構30的預蝕刻器31處,預蝕刻器31啟動對應於電路板50突部511處的噴嘴32,噴嘴32噴出的蝕刻液可對銅箔51上的各該突部511進行蝕刻,藉以將銅箔51厚度予以修整,完成後電路板50上的銅箔51厚度各位置處的厚度可趨近於均勻相同。 The leveling mechanism 30 has a pre-etcher 31 and a plurality of nozzles 32, the pre-etcher 31 corresponds to the conveying path of the transfer mechanism 10, and each of the nozzles 32 is arranged on the pre-etcher 31 and faces the transfer mechanism 10 The number of nozzles 32 installed in the pre-etcher 31 can be adjusted and installed according to needs. The pre-etcher 31 of the leveling mechanism 30 can be connected to the arithmetic processing unit, and the quantity The information of the position of the protrusion 511 of the circuit board 50 detected by the measuring mechanism 20 is sent to the pre-etcher 31 of the leveling mechanism 30, and the pre-etcher 31 activates the nozzle 32 corresponding to the protrusion 511 of the circuit board 50. The nozzle 32 The sprayed etching solution can etch each of the protrusions 511 on the copper foil 51, thereby trimming the thickness of the copper foil 51. After completion, the thickness of the copper foil 51 on the circuit board 50 can be approximately uniform in each position. .

配合參看圖6所示,電路板50完成前述加工作業後,電路板50之基板52表面的銅箔51厚度為相同,完成後進行線路或圖案製作,如圖7所示,在電路板50的銅箔51表面且在欲製作成型有線路或圖案的表面處覆設有阻劑膜53,完成該半成品的電路板50由移送機構10朝向下一個加工站移送。 As shown in FIG. 6, after the circuit board 50 completes the foregoing processing operations, the thickness of the copper foil 51 on the surface of the substrate 52 of the circuit board 50 is the same. After the completion, the circuit or pattern is made, as shown in FIG. 7, on the circuit board 50 The surface of the copper foil 51 is covered with a resist film 53 on the surface where the circuit or pattern is to be formed, and the semi-finished circuit board 50 is transferred by the transfer mechanism 10 toward the next processing station.

配合參看圖5所示,該蝕刻機構40具有一蝕刻處理室,其為一中空體,蝕刻處理室的內部安裝有一第一蝕刻部41、一第二蝕刻部42及一吸取部43,該蝕刻機構40的箱體底部具有一槽體400,槽體400內部盛裝有蝕刻液401,第一蝕刻部41及第二蝕刻部42依電路板50位在移送機構10的運送方向併列設置,該吸取部43具有複數個吸嘴431,該吸取部43為相鄰於該第一蝕刻部41及該第二蝕刻部42設置,該吸嘴431具有至少一吸入口,各該吸嘴431的吸入口為對應於移送通過的電路板50上方表面,實施時,該槽體400內部的蝕刻液401以管路輸送至第一蝕刻部41及第二蝕刻部42對電路板50進行蝕刻,蝕刻後的蝕刻液401流至槽體400內,殘留在電路板50上的蝕刻液在通過吸取部43,吸取部43的吸嘴431吸取殘留的蝕刻液,使得蝕刻液與電路板50表面分離,以避免在移送機構10傳送過程中造成非預期的過度蝕刻。 As shown in FIG. 5, the etching mechanism 40 has an etching processing chamber, which is a hollow body. The inside of the etching processing chamber is installed with a first etching portion 41, a second etching portion 42 and a suction portion 43. The bottom of the box body of the mechanism 40 has a tank 400 in which the etching solution 401 is contained. The first etching part 41 and the second etching part 42 are arranged side by side in the conveying direction of the transfer mechanism 10 according to the position of the circuit board 50. The suction The portion 43 has a plurality of suction nozzles 431, the suction portion 43 is disposed adjacent to the first etching portion 41 and the second etching portion 42, the suction nozzle 431 has at least one suction port, and the suction port of each suction nozzle 431 In order to correspond to the upper surface of the circuit board 50 being transferred, during implementation, the etching solution 401 in the tank 400 is transported to the first etching part 41 and the second etching part 42 to etch the circuit board 50. The etching solution 401 flows into the tank 400, and the etching solution remaining on the circuit board 50 passes through the suction portion 43, and the suction nozzle 431 of the suction portion 43 sucks the remaining etching solution, so that the etching solution is separated from the surface of the circuit board 50 to avoid Unexpected over-etching is caused during the transfer process of the transfer mechanism 10.

該第一蝕刻部41具有一第一噴嘴410,第一噴嘴410噴出有第一蝕刻液,第一噴嘴410具有複數第一上噴嘴411及複數第一下噴嘴412,第一噴嘴410所噴出的第一蝕刻液的液滴為較大。第一蝕刻液經泵浦加壓後經由管路輸送至各該第一上噴嘴411及各該第一下噴嘴412噴射出,各該第一上噴嘴411設置在移送機構10的上方位置且所噴出的第一蝕刻液為向下噴灑出,各該第一 下噴嘴412設置在移送機構10的下方位置且所噴出的第一蝕刻液為向上噴灑出,由於第一噴嘴410所噴射出的第一蝕刻液的液滴為較大,可對電路板50的銅箔51進行粗略的蝕刻處理。 The first etching part 41 has a first nozzle 410, and the first nozzle 410 sprays a first etching solution. The first nozzle 410 has a plurality of first upper nozzles 411 and a plurality of first lower nozzles 412. The droplets of the first etching solution are relatively large. The first etching solution is pumped and pressurized and then delivered to each of the first upper nozzles 411 and each of the first lower nozzles 412 to be sprayed out. Each of the first upper nozzles 411 is arranged at an upper position of the transfer mechanism 10 and The sprayed first etching liquid is sprayed downwards, each of the first The lower nozzle 412 is arranged at the lower position of the transfer mechanism 10 and the sprayed first etching liquid is sprayed upwards. Since the droplets of the first etching liquid sprayed by the first nozzle 410 are relatively large, it can affect the circuit board 50 The copper foil 51 undergoes a rough etching process.

該第二蝕刻部42具有一第二噴嘴420,該第二噴嘴420噴射出有第二蝕刻液,第二噴嘴420具有複數第二上噴嘴421及複數第二下噴嘴422,第二蝕刻液經泵浦加壓及以高壓導入空氣後經由管路輸送至各該第二上噴嘴421及各該第二下噴嘴422噴射出,各該第二上噴嘴421設置在移送機構10的上方位置且所噴射出混合有氣體的第二蝕刻液為向下噴灑出,各該第二下噴嘴422設置在移送機構10的下方位置且所噴出混合有氣體的第二蝕刻液為向上噴灑出。本新型第二噴嘴420所噴射出的第二蝕刻液混合有高壓空氣再由第二噴嘴420噴射出,由於第二蝕刻部42的第二蝕刻液為較微細化的液滴,所噴射出的第二蝕刻液較第一蝕刻液具有更為微小的液滴且可形成具有更強衝擊力,以微小蝕刻液液滴對電路板50的銅箔51進行較為細緻的蝕刻處理,因此可獲得較小寬度的線路或細緻圖案。 The second etching part 42 has a second nozzle 420 which sprays a second etching liquid. The second nozzle 420 has a plurality of second upper nozzles 421 and a plurality of second lower nozzles 422. The second etching liquid passes through The pump is pressurized and the air is introduced at high pressure and then delivered through a pipeline to each of the second upper nozzles 421 and each of the second lower nozzles 422 to spray out. Each of the second upper nozzles 421 is arranged at an upper position of the transfer mechanism 10 and The second etching liquid mixed with gas is sprayed downward, and each of the second lower nozzles 422 is arranged at a position below the transfer mechanism 10 and the second etching liquid mixed with gas is sprayed upward. The second etching liquid ejected by the second nozzle 420 of the present invention is mixed with high-pressure air and then ejected from the second nozzle 420. Since the second etching liquid of the second etching portion 42 is a finer droplet, the ejected The second etching solution has smaller droplets than the first etching solution and can form a stronger impact force. The copper foil 51 of the circuit board 50 is etched more delicately with the minute etching solution droplets, so that more Small width lines or detailed patterns.

該吸取部43包括有複數吸嘴431,各該吸嘴431位在移送機構10所運送的電路板50的上方,吸嘴431一端的吸入口緊鄰於電路板50的上表面,另一端與一吸取設備連接,該吸取設備為現有技術(圖中未示),例如:吸取設備為一負壓產生裝置可使吸嘴431的吸入口具有一吸力,各該吸嘴431可將位在電路板50上方的蝕刻液吸取。 The suction portion 43 includes a plurality of suction nozzles 431, each of the suction nozzles 431 is located above the circuit board 50 conveyed by the transfer mechanism 10, the suction port at one end of the suction nozzle 431 is adjacent to the upper surface of the circuit board 50, and the other end is connected to the upper surface of the circuit board 50. The suction device is connected. The suction device is of the prior art (not shown in the figure). For example, the suction device is a negative pressure generating device that can make the suction port of the suction nozzle 431 have a suction force, and each of the suction nozzles 431 can be positioned on the circuit board The etching solution above 50 is sucked.

該第二蝕刻部42的第二噴嘴420所噴出的第二蝕刻液是由蝕刻液與高壓空氣混合組成,第二蝕刻液經泵浦加壓後經由管路輸送至第二噴嘴420,另以空氣管路將經加壓的空氣輸送至噴嘴420處,混合後含有高壓空氣的第二蝕刻液經由各該第二上噴嘴421及各該第二下噴嘴422噴射出,將電路板50 未受到阻劑膜53覆蓋的銅箔51予以蝕刻,完成後電板板50具有所設計的線路510或圖案。 The second etching liquid sprayed by the second nozzle 420 of the second etching part 42 is composed of a mixture of etching liquid and high-pressure air. The second etching liquid is pumped and pressurized and then delivered to the second nozzle 420 via a pipeline. The air pipeline transports the pressurized air to the nozzle 420, and the mixed second etching liquid containing high-pressure air is sprayed out through each of the second upper nozzles 421 and each of the second lower nozzles 422, and the circuit board 50 The copper foil 51 that is not covered by the resist film 53 is etched, and after completion, the electric board 50 has the designed circuit 510 or pattern.

本新型於實施製作電路板50,首先將半成品電路板50經由該量測機構20及該整平機構30的加工作業,使得銅箔51的厚度可趨於相同厚度,電路板50移送至蝕刻機構40時,以第一蝕刻部41的第一噴嘴410所噴出的第一蝕刻液對沒有被阻劑膜53遮蓋的銅箔51進行蝕刻,由於第一蝕刻液液滴為較大,可對電路板50的銅箔51進行粗略的蝕刻處理,半成品電路板50再移送經由第二蝕刻部42的第二噴嘴420所噴出的第二蝕刻液進行蝕刻,由較第一蝕刻液具有更為微小的液滴且可形成具有更強衝擊力,使得所蝕刻製作出的線路寬度或圖案可較為微小細緻。 In the implementation of the present invention, the circuit board 50 is manufactured. First, the semi-finished circuit board 50 is processed by the measuring mechanism 20 and the leveling mechanism 30, so that the thickness of the copper foil 51 can be the same thickness, and the circuit board 50 is transferred to the etching mechanism At 40 o'clock, the copper foil 51 that is not covered by the resist film 53 is etched with the first etching liquid sprayed from the first nozzle 410 of the first etching part 41. Since the droplets of the first etching liquid are relatively large, the circuit can be The copper foil 51 of the board 50 undergoes a rough etching process, and the semi-finished circuit board 50 is then transferred to the second etching solution sprayed from the second nozzle 420 of the second etching part 42 for etching, which has a smaller amount than the first etching solution. The droplets can be formed with stronger impact force, so that the width or pattern of the etched circuit can be smaller and more detailed.

本新型的蝕刻機構40對電路板進行蝕刻試驗,蝕刻試驗方式與先前技術所提出的發明第TWI539876號為相同。以下表格為對形成有二種不同線路或圖案的電路板進行測試,其中一種為對具有18μm銅箔的電路板進行L/S=20/20μm的線路或圖案形成,另一種為對35μm銅箔的電路板進行L/S=50/50μm的線路或圖案形成,配合參看圖8所示,前述L係表示作為阻劑膜53與基板52之間的線路510或圖案的寬度,S係表示作為兩相互鄰接的阻劑膜53且位於阻劑膜53與基板52之間的線路510或圖案之間的間隔距離。 The etching mechanism 40 of the present invention performs an etching test on the circuit board, and the etching test method is the same as the invention No. TWI539876 proposed by the prior art. The following table is to test the circuit boards with two different lines or patterns, one of which is to form a circuit or pattern with L/S=20/20μm on a circuit board with 18μm copper foil, and the other is to form a 35μm copper foil The circuit board is L/S=50/50μm line or pattern formation, with reference to Figure 8, the aforementioned L represents the width of the line 510 or pattern between the resist film 53 and the substrate 52, and S represents the width of the line 510 or pattern between the resist film 53 and the substrate 52. The distance between two resist films 53 adjacent to each other and between the lines 510 or patterns between the resist film 53 and the substrate 52.

Figure 110202255-A0305-02-0010-1
Figure 110202255-A0305-02-0010-1

Figure 110202255-A0305-02-0011-2
Figure 110202255-A0305-02-0011-2

例如,表格中所記載為L/S=20/20μm的試驗實例,其線路510或圖案的寬度與兩相互鄰接線路510或圖案之間的間隔距離均為20μm。再者試驗實例的蝕刻條件將第一噴嘴410的第一蝕刻液壓力設定為0.2Mpa,將第二噴嘴420的第二飾刻液壓力設定為0.3Mpa。前述經改變第二噴嘴420所噴射出的第二蝕刻液液體量相對於第一噴嘴410及第二噴嘴420所噴射出的液體總量比例分別為0.0%、2.0%、6.0%、12.1%、24.1%、44.1%、55.0%、75.1%及100.0%,測試得到的蝕刻因子(E/F)分別為4.7、5.9、6.5、6.9、7.1、7.2、7.5、7.7及7.8。 For example, in the test example described in the table as L/S=20/20 μm, the width of the line 510 or pattern and the separation distance between two adjacent lines 510 or patterns are both 20 μm. Furthermore, in the etching conditions of the test example, the pressure of the first etching liquid of the first nozzle 410 was set to 0.2Mpa, and the pressure of the second etching liquid of the second nozzle 420 was set to 0.3Mpa. The ratio of the amount of the second etching liquid sprayed by the changed second nozzle 420 to the total amount of liquid sprayed by the first nozzle 410 and the second nozzle 420 are 0.0%, 2.0%, 6.0%, 12.1%, respectively. 24.1%, 44.1%, 55.0%, 75.1%, and 100.0%, and the tested etching factors (E/F) are 4.7, 5.9, 6.5, 6.9, 7.1, 7.2, 7.5, 7.7, and 7.8, respectively.

由試驗後的表格內容所得到的試驗結果,以使用第二噴嘴420所噴射出的第二蝕刻液液體量相對於第一噴嘴410及第二噴嘴420所噴射出液體總量的比例以佔55%以上為最佳,其蝕刻因子(E/F)大幅增加,具有較適當的蝕刻因子(E/F)。 According to the test results obtained from the contents of the table after the test, the ratio of the amount of the second etching liquid sprayed by the second nozzle 420 to the total amount of the liquid sprayed by the first nozzle 410 and the second nozzle 420 accounts for 55 % Or more is the best, the etching factor (E/F) is greatly increased, and it has a more appropriate etching factor (E/F).

10:移送機構 10: Transfer mechanism

20:量測機構 20: Measuring mechanism

21:感測器 21: Sensor

30:整平機構 30: Leveling mechanism

31:預蝕刻器 31: Pre-etcher

32:噴嘴 32: Nozzle

40:蝕刻機構 40: Etching mechanism

400:槽體 400: tank

401:蝕刻液 401: Etching Solution

41:第一蝕刻部 41: The first etching part

410:第一噴嘴 410: The first nozzle

42:第二蝕刻部 42: The second etching part

420:第二噴嘴 420: second nozzle

431:吸嘴 431: Nozzle

50:電路板 50: circuit board

Claims (2)

一種具有預蝕刻製程的蝕刻裝置,其包括有一移送機構、一量測機構、一整平機構及一蝕刻機構,該移送機構貫穿位在依序排列的該量測機構、該整平機構及該蝕刻機構內部;該移送機構可用於將一待加工的電路板予以移送,其具有一機架,機架上設有相互平行設置的複數下傳送桿體,各該下傳送桿體形成為一第一橫向移送位置,機架另設有相互平行設置的複數上傳送桿體,各該上傳送桿體形成為一第二橫向移送位置且相對的位在該蝕刻機構,該第一橫向移送位置與該第二橫向移送位置之間形成有一可供電路板移送的間隔;該量測機構包括有至少一感測器並安裝在一架體,該感測器可對位在第一橫向移送位置的電路板的銅箔厚度進行量測,並將量測後的訊息傳送至一運算處理單元;該整平機構具有一預蝕刻器及複數噴嘴,該預蝕刻器及各該噴嘴為對應於移送機構的運送路徑,該預蝕刻器與該運算處理單元連接,該運算處理單元可控制各該噴嘴噴出的蝕刻液,而對電路板銅箔表面進行預蝕刻;該蝕刻機構具有一蝕刻處理室,該蝕刻處理室為一中空體且底部具有一槽體,該槽體內盛裝有蝕刻液,該蝕刻處理室的內部安裝有一第一蝕刻部、一第二蝕刻部及一吸取部,該第一蝕刻部及第二蝕刻部依電路板移送方向併列設置,該吸取部具有複數個吸嘴,各該吸嘴為相鄰於該第一蝕刻部及該第二蝕刻部設置,該吸嘴具有至少一吸入口且對應於移送通過的電路板上方表面,以去除位在電路板上的蝕刻液;該第一蝕刻部具有一第一噴嘴,第一噴嘴噴出有第一蝕刻液,該第二蝕刻部具有一第二噴嘴,該第二噴嘴噴射出有第二蝕刻液,第二蝕刻液經泵浦加壓及以高壓導入空氣後經由管路輸送至該第二噴嘴噴射出,第二噴嘴所噴射出的 第二蝕刻液液體量相對於第一噴嘴及第二噴嘴所噴射出液體總量的比例為佔55%以上。 An etching device with a pre-etching process includes a transfer mechanism, a measurement mechanism, a leveling mechanism, and an etching mechanism. The transfer mechanism penetrates the measurement mechanism, the leveling mechanism, and the Inside the etching mechanism; the transfer mechanism can be used to transfer a circuit board to be processed. It has a frame on which a plurality of lower transfer rods arranged parallel to each other are arranged, and each of the lower transfer rods is formed as a first In the horizontal transfer position, the frame is additionally provided with a plurality of upper transfer rods arranged in parallel with each other. Each of the upper transfer rods is formed as a second transverse transfer position and is located opposite to the etching mechanism. The first transverse transfer position is opposite to the first transverse transfer position. A space is formed between the two lateral transfer positions for the circuit board to be transferred; the measuring mechanism includes at least one sensor and is mounted on a frame, and the sensor can be aligned with the circuit board at the first lateral transfer position The thickness of the copper foil is measured, and the measured information is sent to an arithmetic processing unit; the leveling mechanism has a pre-etcher and a plurality of nozzles, and the pre-etcher and each nozzle are corresponding to the conveying mechanism Path, the pre-etcher is connected with the arithmetic processing unit, the arithmetic processing unit can control the etching liquid sprayed by each nozzle, and pre-etch the copper foil surface of the circuit board; the etching mechanism has an etching processing chamber, and the etching processing The chamber is a hollow body and has a tank at the bottom. The tank is filled with etching solution. The etching processing chamber is equipped with a first etching part, a second etching part and a suction part. The first etching part and the second etching part are installed inside the etching processing chamber. The two etching parts are arranged side by side according to the transfer direction of the circuit board, the suction part has a plurality of suction nozzles, each of the suction nozzles is arranged adjacent to the first etching part and the second etching part, and the suction nozzle has at least one suction port and Corresponding to the upper surface of the circuit board being transferred to remove the etching liquid on the circuit board; the first etching part has a first nozzle, the first nozzle sprays the first etching liquid, and the second etching part has a first etching liquid. Two nozzles, the second nozzle sprays the second etching liquid, the second etching liquid is pumped and pressurized and the air is introduced at a high pressure and then transported through the pipeline to the second nozzle to be sprayed. The second nozzle sprays The ratio of the liquid amount of the second etching liquid to the total amount of liquid ejected by the first nozzle and the second nozzle is 55% or more. 如請求項1所述之具有預蝕刻製程的蝕刻裝置,其中該第一噴嘴具有複數第一上噴嘴及複數第一下噴嘴,第一蝕刻液經泵浦加壓後經由管路輸送至各該第一上噴嘴及各該第一下噴嘴噴射出,第一蝕刻液的液滴可對電路板的銅箔進行粗略的蝕刻處理,第二噴嘴具有複數第二上噴嘴及複數第二下噴嘴,第二蝕刻液經泵浦加壓及以高壓導入空氣後經由管路輸送至各該第二上噴嘴及各該第二下噴嘴噴射出,第二蝕刻液為較微細化的液滴以進行細緻的蝕刻處理。 The etching device having a pre-etching process according to claim 1, wherein the first nozzle has a plurality of first upper nozzles and a plurality of first lower nozzles, and the first etching liquid is pumped and pressurized and then delivered to each of the The first upper nozzle and each of the first lower nozzles are ejected. The droplets of the first etching solution can roughly etch the copper foil of the circuit board. The second nozzle has a plurality of second upper nozzles and a plurality of second lower nozzles. The second etching liquid is pumped and pressurized and air is introduced at a high pressure, and then transported to each of the second upper nozzles and each of the second lower nozzles through the pipeline to be sprayed out. The second etching liquid is a finer droplet for fineness.的etching treatment.
TW110202255U 2021-03-02 2021-03-02 Etching device with pre-etching process TWM613270U (en)

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