TWM612854U - Atomic layer deposition device - Google Patents

Abstract

The present disclosure relates to an atomic layer deposition device. The atomic layer deposition device has a chamber, a precursor inlet, a heater a tray, a hollow component and a baffle. When the heater and the tray are driven by the lifting device and approach the hollow component, the tray and the baffle will surround a reaction space, so that the flow field of the process fluid (such as, precursor or purge gas) can be adjusted stably to make a uniform deposition on the substrate.

Description

Atomic layer deposition device

The present invention relates to an atomic layer deposition device, in particular to an atomic layer deposition device that forms a reaction space through a carrier plate and a stopper to adjust the flow field of a process fluid (for example, a precursor or a scrubbing gas).

The development of integrated circuit technology has matured, and current electronic products are developing towards the trend of light, thin, short, high performance, high reliability and intelligence. The miniaturization technology of transistors in electronic products is very important. Small size transistors will have an important impact on the performance of electronic products. When the size of the transistor becomes smaller, the current transmission time and energy consumption can be reduced to achieve fast calculations. And the effect of energy saving. In today's tiny transistors, some of the key thin film layers are almost only a few atoms thick, and one of the technologies to develop these microstructures is the atomic layer deposition process (ALD process).

The atomic layer deposition process is a technique in which substances are deposited layer by layer on the surface of the substrate in the form of single atoms. In the process, the precursor of the reaction is chemically adsorbed on the surface of the substrate or the previous layer of film. Produce thin and uniform films. In the atomic layer deposition process, a uniform deposited film is an important basis for the reduction of transistors, and how to effectively control the uniformity of the film is an important issue for the development of today's transistors.

At present, the uniformity control of the atomic layer deposition process is still not perfect. One of the problems is that the flow field of the precursor is not properly controlled (for example, how does the precursor of the atomic layer deposition process draw out of the cavity without disturbing the uniform deposition behavior? body). The current atomic layer deposition equipment is designed to use a large closed chamber, which can accommodate a large number of precursors during the atomic layer deposition process, and ensures that the precursors stay in the chamber and contact the substrate for deposition, which is closed The type of cavity design can avoid the premature loss of precursors before the deposition and reaction are completed. When the deposition and reaction are completed, the precursors in the cavity are then discharged through the suction port at the bottom of the cavity.

However, such a large closed cavity requires a large amount of precursors, which will make the process cost too high. Furthermore, if the time control of the discharge of the precursor is improper, a single suction device (the bottom suction port) may cause the precursor to form a turbulent flow, which will adversely affect the uniformity of the substrate deposition.

In order to reduce the cost of the process, one of the methods is to reduce the volume of the cavity to reduce the amount of precursors. However, this method will cause the precursors to form turbulence, which will cause the precursors to repeatedly contact the substrate, and the substrate will be deposited uniformly. decline. Therefore, how to reduce the process cost and properly control the uniformity of the precursors deposited on the substrate are issues to be overcome in the current atomic layer deposition process.

Therefore, in order to overcome the shortcomings of the conventional technology, the embodiment of the present invention provides an atomic layer deposition apparatus that can reduce the amount of precursor (precursor) and enable the precursor to exhibit a controlled flow field, thereby adjusting the deposition of the precursor. For the uniformity of the substrate.

Based on at least one of the foregoing objectives, the atomic layer deposition apparatus provided by the embodiment of the present invention includes a cavity, a precursor air inlet, a heating stage, a tray, a stopper, and at least one hollow component. The cavity has an accommodating space, and the heating platform is arranged in the accommodating space of the cavity, wherein the heating platform has a top surface. The carrier plate is located on the top surface of the heating table and is used to carry the substrate. The precursor air inlet fluidly communicates with the accommodating space of the cavity, and is used to transport at least one precursor to the accommodating space. The hollow part is in fluid communication with the accommodating space of the cavity, is higher than the carrier plate, and has at least one air suction hole. The stopper is higher than the tray and surrounds the hollow part, and has a blocking part and a contact part, wherein the blocking part is connected to the cavity or the hollow part, and when the blocking part is displaced downward by gravity, the blocking part is used to restrict the blocking part In the cavity or hollow part.

Optionally, the atomic layer deposition apparatus further includes a lifting device connected to the heating platform, wherein the lifting device drives the heating platform and the carrier plate to approach the hollow part, and the carrier plate contacts the contact part of the stopper and drives the stopper to move vertically, so that The stopper and the carrier plate surround the reaction space.

Based on at least one of the foregoing objectives, the atomic layer deposition process method provided by the embodiment of the present invention applies the foregoing atomic layer deposition apparatus including a cavity, a precursor air inlet, a heating stage, a tray, a stopper, a motor, and at least A hollow part. The cavity has an accommodating space. The precursor air inlet fluidly communicates with the accommodating space of the cavity, and is used to transport at least one precursor to the accommodating space. The heating stage is arranged in the accommodating space of the cavity and has a top surface. The carrier plate is located on the top surface of the heating table and is used to carry at least one substrate. The hollow part is in fluid communication with the accommodating space and is higher than the carrier plate, and has at least one suction hole. The stopper is higher than the tray and surrounds the hollow part, and has a blocking portion and a contact portion. The motor is connected to the blocking part of the blocking member and used for driving the vertical displacement of the blocking member.

Optionally, the atomic layer deposition system further includes a lifting device connected to the heating platform, wherein the lifting device drives the heating platform and the carrier plate to approach the hollow part, and the stopper and the carrier plate surround the reaction space.

Optionally, the contact portion of the stopper further includes a shielding ring and is adjacent to the carrier plate, so as to reduce the leakage of the precursor from the stopper and the carrier plate when the stopper and the carrier plate surround the reaction space.

Optionally, the atomic layer deposition apparatus further includes a buffer unit located between the barrier portion and the contact portion of the barrier to buffer the barrier when the barrier is displaced downward.

Optionally, the buffer unit is a spring or a linear slide rail buffer unit.

Optionally, the contact part is an annular ring body, and the stopper further includes a plurality of connecting rods located between the stop part and the contact part.

Optionally, the atomic layer deposition apparatus further includes at least one opening in fluid communication with the accommodating space for introducing gas between the cavity and the stopper to prevent the precursor from being deposited on the stopper.

Optionally, the atomic layer deposition apparatus further includes at least one air suction port, which is in fluid communication with the cavity, and is opposite to the precursor air intake port for exhausting at least one fluid in the accommodating space.

Optionally, the precursor air inlet is a nozzle.

Optionally, the carrier disk is a circular disk.

In short, the atomic layer deposition apparatus provided by the embodiment of the present invention can surround the reaction space through the stopper and the carrier plate, so that the precursors in the atomic layer deposition process are drawn away from the hollow part, thereby performing dynamic alignment. The substrate undergoes reaction and deposition to control the uniformity of the substrate during deposition. Therefore, markets that require atomic layer deposition (for example, integrated circuits) have advantages.

In order to make the above and other objects, features and advantages of the present invention more obvious and understandable, detailed descriptions are made as follows in conjunction with the accompanying drawings.

In order to fully understand the purpose, features and effects of the present invention, a detailed description of the present invention is given with the following specific embodiments and accompanying drawings. The description is as follows.

First, please refer to FIGS. 1 and 2. FIG. 1 is a schematic diagram of an atomic layer deposition apparatus according to an embodiment of the present invention. As shown in FIG. 1, the atomic layer deposition apparatus 1 includes a cavity 101, a heating stage 102, a carrier plate 106, a stopper 105, at least one hollow component 103 and a precursor air inlet 104. The cavity 101 has an accommodation space S, and the precursor air inlet 104 is in fluid communication with the accommodation space S of the cavity 101 and is used to transport at least one precursor G101 to the accommodation space S. In other embodiments, the precursor air inlet 104 may also be a spray head 1041, which is embedded on the top of the cavity 101, or is arranged in the accommodating space S of the cavity 101.

The heating station 102 is arranged in the accommodating space S of the cavity 101, and the heating station 102 has a top surface, and the carrier plate 106 is located on the top surface of the heating station 102 and is used to carry at least one substrate W, wherein the carrier plate 106 It can be a disc. In one embodiment, the substrate W may be a wafer.

The hollow member 103 is in fluid communication with the accommodating space S of the cavity 101 and is higher than the carrier plate 106, and has at least one suction hole O103. The hollow part 103 can be connected with a pump (not shown) to pump out the fluid in the accommodating space S of the cavity 101, where the fluid may be air, scrubbing gas, precursor or the accommodating space left before the process starts Any substance in S. In one embodiment, the suction hole O103 is located at the bottom of the hollow member 103. In other embodiments, the suction hole O103 may also be located on the side of the hollow member 103.

The stopper 105 is higher than the tray 106 and surrounds the hollow part 103. Specifically, the stopper 105 has a stopper portion 1053 and a contact portion 1051, and the stopper portion 1053 is higher than the contact portion 1051. The blocking portion 1053 is used to limit the position of the blocking piece 105 so that the blocking piece 105 does not fall to the bottom of the cavity 101 under gravity. 1, in one embodiment, the stopper 105 is connected to the cavity 101, and when the stopper 105 is displaced downward by gravity, the stopper portion 1053 is used to restrict the stopper 105 to the cavity 101 so that the stopper 105 Does not fall. Specifically, the stopper 105 can be directly connected to the cavity 101, for example, the stopper 105 is restricted to the cavity 101 by means of locking or snapping. Alternatively, the stopper 105 can also be indirectly connected to the cavity 101, for example, the stopper 105 is connected to the cavity 101 through other components. The position where the stopper 105 is connected to the cavity 101 is not limited to the top or the side of the cavity 101.

2, in other embodiments, the stopper 105 may also be connected to the hollow member 103, and when the stopper 105 is displaced downward by gravity, the stopper 1053 is used to restrict the stopper 105 to the hollow member 103, wherein, The stopper 105 needs to surround the suction hole O103 of the hollow member 103 so that the suction hole O103 is located in the reaction space S1.

In an embodiment, a buffer unit 107 may also be provided between the blocking portion 1053 of the stopper 105 and the contact portion 1051. When the stopper 105 is displaced downward by gravity, the buffer unit 107 can buffer the stopper 105 so that the stopper 105 will not quickly move downwards. In this way, the generation of dirt caused by the rapid displacement of the stopper 105 can be reduced. In one embodiment, the buffer unit 107 may be a spring 1071, but the present invention is not limited to this.

Please refer to FIG. 3, which is a schematic diagram of the stopper of the embodiment of the present invention. In one embodiment, the stopper 105 can be connected to linear slide rails. For example, the stopper 105 is confined between the linear slide rails, and the buffer unit 107 is a linear slide rail buffer unit 1072 to slow down the stopper 105 by gravity. The speed of displacement, in this way, can reduce the chance of dirt. The linear slide rail can be arranged on the hollow part 103 to connect the stopper 105 to the hollow part 103, or the linear slide rail can also be connected to the cavity 101 to connect the stopper 105 to the cavity 101.

The atomic layer deposition apparatus 1 also has a lifting device 108, and the lifting device 108 is connected to the heating table 102. When the lifting device 108 drives the heating table 102 and the carrier plate 106 to approach the hollow member 103, the carrier plate 106 can contact the stopper 105 that hangs naturally, and drive the stopper 105 to move vertically upwards. Specifically, the carrier plate 106 contacts the contact portion 1051 of the stopper 105 and drives the stopper 105 to move vertically, so that the stopper 105 and the carrier plate 106 surround the reaction space S1.

Please refer to FIGS. 4 and 5. FIG. 4 is a top view of the stopper according to an embodiment of the present invention, and FIG. 5 is a perspective view of the stopper according to an embodiment of the present invention. Specifically, the contact portion 1051 of the stopper 105 is an annular ring body, and the stopper 105 further includes a plurality of connecting rods 1052. The connecting rods 1052 are located between the stopper portion 1053 and the contacting portion 1051, and the plurality of connecting rods 1052 are evenly arranged and arranged. Connect the contact portion 1051. When the lifting device 108 drives the heating table 102 and the carrier plate 106 to approach the hollow member 103, the carrier plate 106 will contact the contact portion 1051 of the stopper 105 and drive the stopper 105 to move upward, and the stopper 105 forms a wall surface and interacts with the carrier plate. 106 surrounds the reaction space S1. The precursor G101 can be retained in the reaction space S1 to react with the substrate W without providing the cavity 101 with a usage amount of the precursor G101 to fill the accommodating space S, so the usage of the precursor G101 can be saved.

By adjusting the distance between the lifting device 108 and the hollow member 103 through the lifting device 108, the size of the reaction space S1 can be controlled. In this way, the uniformity of the substrate W when the precursor G101 is deposited on the substrate W can be controlled. Specifically, the small reaction space S1 can reduce the turbulence of the precursor G101, and the precursor G101 can be slowly and stably drawn away by the hollow member 103. In this way, the substrate W can be subjected to uniformity after the precursor G101 is deposited. improve.

Furthermore, the hollow part 103, the carrier plate 106 and the stopper 105 can form an upper air extraction path to guide the excess precursor G101 to be drawn out of the cavity 101, which is different from the traditional deposition equipment which can only be drawn through the bottom air extraction port. In addition to excess precursor G101. With the structural design of the atomic layer deposition apparatus of the present invention, the excess precursor G101 can form a stable and slow air flow, so that the substrate W can be deposited uniformly by the precursor G101.

The atomic layer deposition apparatus 1 may also have an opening 1012 that is fluidly connected to the accommodating space S and used to introduce the gas G between the cavity 101 and the stopper 105. Specifically, the gas G is a gas that does not react with the precursor G101, such as nitrogen or an inert gas. As shown in FIG. 1, the opening 1012 can be provided at the top of the cavity 101, and the gas G is introduced between the cavity 101 and the stopper 105 to form a gas wall and prevent the precursor G101 from being deposited on the stopper 105. In one embodiment, the gas G is introduced between the cavity 101 and the blocking portion 1053 of the stopper 105, but the present invention is not limited by this. The gas G can also be introduced into the cavity 101 and the stopper through the opening 2012 105 between the connecting rods 1052, or introduced between the cavity 101 and the contact portion 1051 of the stopper 105. In other embodiments, the opening 1012 may also be provided on the side of the cavity 101 and pass the gas G between the cavity 101 and the stopper.

In one embodiment, the atomic layer deposition apparatus 1 further includes an air extraction port 1011 fluidly connected to the cavity 101, and the air extraction port 1011 and the precursor air inlet 104 are opposite to each other and used to discharge at least one fluid in the accommodating space S. The fluid may be air, scrubbing gas, precursor, or any substance left in the accommodating space S before the process starts. In one embodiment, the suction port is located at the bottom of the cavity 101 and is connected to a pump. When the suction port 1011 sucks the cavity 101 downward, a lower suction path can be formed. When the air suction port 1011 and the precursor air inlet 104 are arranged opposite to each other, the flow control of the precursor G101 or the scrubbing gas can also be improved.

Please refer to FIG. 6. FIG. 6 is a perspective view of a stopper according to still another embodiment of the present invention. In an embodiment, the contact portion 2051 of the stopper 205 further includes a plurality of openings O2051 to adjust the flow of the fluid when the fluid in the accommodating space S is discharged from the suction port 1011. Specifically, different numbers and/or different sizes of openings O2051 can be designed to adjust the flow rate and flow rate of the fluid during pumping down.

In one embodiment, the steps of the atomic layer deposition process can be described as follows. First, the accommodating space S of the cavity 101 is pumped through the suction port 1011, and the lifting device 108 drives the heating stage 102, the tray 106 and the stoppers 105, 205 to move vertically upwards, so that the tray 106 and the stoppers 105, 205 are moved upward. Surround the reaction space S1. When the contact portion 1051 of the stopper 105 does not have the opening O2051, the fluid in the accommodating space S can be drawn away from the gap between the carrier plate 106 and the stopper 105 by the suction port 1011. When the contact portion 2051 of the stopper 205 has an opening O2051, the fluid in the accommodating space S can also be drawn away from the opening O2051 by the suction port 1011.

Next, the precursor G101 is provided to the accommodating space S of the cavity 101 through the precursor air inlet 104, and diffuses above the substrate W to react and deposit with the material on the surface of the substrate W. After the precursor G101 is injected into the cavity 101 to reach the target amount (the target amount is determined according to the process parameters), the precursor gas inlet 104 stops supplying the precursor G101 to the cavity 101.

Next, a scrubbing gas (for example, but not limited to nitrogen) is provided to the accommodating space S of the cavity 101 to purge the precursor G101, and synchronously, pass through the hollow member 103, the carrier plate 106, and the stopper. The reaction space S1 formed by the components 105 and 205 and the upper air extraction path can extract the precursor G101 in the cavity 101.

Specifically, most of the precursor G101 exists in the reaction space S1, and the precursor G101 is slowly drawn off by the pump connected to the hollow member 103, so that the precursor G101 presents a slow flow field. In this way, the precursor G101 can react and deposit the substrate W in a dynamic manner. Similarly, the flow field of the scrubbing gas can also be stably controlled.

When the precursor G101 and the scrubbing gas in the cavity 101 show a slow flow, the flow field can be stably controlled, and turbulence can be avoided, so that the uniformity of the substrate W during the atomic layer deposition is improved. control.

In other embodiments, the hollow member pumping air to the accommodating space S of the cavity 101 may also be performed simultaneously with the pumping of the air suction port 1011 to the accommodating space S of the cavity 101, that is, before the substrate W is deposited, The accommodating space S of the cavity 101 is pumped synchronously through the suction port 1011 and the hollow member 103.

Next, please refer to FIG. 7, which is a schematic diagram of an atomic layer deposition apparatus according to another embodiment of the present invention. The atomic layer deposition apparatus 2 is substantially the same as the foregoing embodiment, except that the contact portion 1051 of the stopper 105 of the atomic layer deposition apparatus 2 further includes a shielding ring, and the atomic layer deposition apparatus 2 further includes a motor 109.

The shielding ring R1051 is adjacent to the carrier plate 106 and is used to close the gap between the stopper 105 and the carrier plate 106, so that when the stopper 105 and the carrier plate 106 surround the reaction space S1, the precursor G101 self-blocking component is reduced There is a leak between 105 and the carrier 106. The shielding ring R1051 can be applied to the foregoing embodiments. Similarly, the stopper 105 may include or not include the opening O2051.

Specifically, the atomic layer deposition apparatus 2 includes a cavity 101, a heating stage 102, a carrier plate 106, a stopper 105, a motor 109, at least one hollow component 103 and a precursor air inlet 104. The motor 109 is connected to the stopper 105. Specifically, the motor 109 is connected to the stopper portion 1053 of the stopper 105, and is used to drive the stopper 105 to move vertically, so that the stopper is not only moved by gravity or indirectly driven by the lifting device 108. . When the position of the stopper 105 is adjusted by the motor 109, the flow of the fluid in the cavity 101 can be further regulated.

In one embodiment, the opening 2012 is provided on the side of the cavity 101, and the gas G is introduced between the cavity 101 and the stopper 105 to form a gas wall and prevent the precursor G101 from being deposited on the stopper 105. For example, the gas G is introduced between the cavity 101 and the contact portion 1051 of the stopper 105, but the present invention is not limited to this. The gas G can also be introduced anywhere between the stopper 105 and the cavity 101. between. Alternatively, the opening 2012 may also be provided at the top of the cavity 101.

In one embodiment, the steps of the atomic layer deposition process can be described as follows. First, the accommodating space S of the cavity 101 is pumped through the suction port 1011, the lifting device 108 drives the heating stage 102, the tray 106 and the stopper 105 to move vertically upward, and the motor 109 drives the stopper 105 to move vertically downward. The carrier 106 and the stopper 105 may or may not have a gap, and the size of the gap can be controlled by adjusting the movement or driving force of the lifting device 108 and/or the motor 109, thereby adjusting the fluid in the accommodating space S The flow rate and flow rate.

Next, the precursor G101 is provided to the accommodating space S of the cavity 101 through the precursor air inlet 104, and diffuses above the substrate W to react and deposit with the material on the surface of the substrate W, and the motor 109 can drive the gear The piece 105 is displaced to adjust the flow of the precursor G101. For example, when the motor 109 drives the stopper 105 to move, so that there is a gap between the carrier plate 106 and the stopper 105, the precursor G101 can be drawn away by the air suction port 1011. By adjusting the size of the gap, the flow rate and velocity of the precursor G101 can be adjusted.

After the precursor G101 is injected into the cavity 101 to reach the target amount (the target amount is determined according to the process parameters), the precursor gas inlet 104 stops supplying the precursor G101 to the cavity 101.

Next, a scrubbing gas (for example, but not limited to nitrogen) is provided to the accommodating space S of the cavity 101 to purge the precursor G101, and synchronously, pass through the hollow member 103, the carrier plate 106, and the stopper. The reaction space S1 formed by the member 105 and the upper air extraction path can extract the precursor G101 in the cavity 101. Similarly, the motor 109 can drive the stopper 105 to move to adjust the flow of the precursor G101. For example, when the motor 109 drives the stopper 105 to displace, so that there is a gap between the carrier plate 106 and the stopper 105, the precursor G101 can be drawn away by the air suction port 1011 and the hollow member 103 at the same time. By adjusting the size of the gap, the flow rate and velocity of the precursor G101 can be adjusted.

Similarly, the precursor G101 can react and deposit the substrate W in a dynamic manner, and the flow field of the scrubbing gas can also be stably controlled. When the precursor G101 and the scrubbing gas in the cavity exhibit a slow flow, the flow field can be stably controlled and the generation of turbulence can be avoided, so that the uniformity of the atomic layer deposition of the substrate W is well controlled.

Similarly, in other embodiments, the hollow member pumping air to the accommodating space S of the cavity 101 can also be performed simultaneously with the pumping of the air suction port 1011 to the accommodating space S of the cavity 101, that is, to deposit the substrate W Previously, the accommodating space S of the cavity can be pumped synchronously through the suction port 1011 and the hollow member 103.

The atomic layer deposition apparatus 1, 2 may further include a shielding member 110 and at least one air inlet 1013. The shielding member 110 is disposed in the accommodating space S and shields a part of the inner surface S0 of the cavity 101, and the shielding member 110 There is a gap between 110 and the inner surface S0 of the cavity 101, and the gap communicates with the accommodating space S. The air inlet 1013 is located on the inner surface S0 of the cavity 101, and the shield 110 shields the air inlet 1013, and the air inlet 1013 is used to introduce the gas G between the shield 110 and the inner surface S0 of the cavity 101. The gas G is caused to diffuse into the gap between the shielding member 110 and the cavity 101, and then to the accommodating space S of the cavity 101 through the gap. The gas G is, for example, but not limited to, nitrogen or inert gas.

Specifically, the inner surface S0 includes an inner wall surface S2 and an inner bottom surface S3, the shielding member 110 shields a part of the inner wall surface S2 and a part of the inner bottom surface S3, and the gas G is introduced through the air inlet 1013 and diffused to the shielding member 110 The gap between the inner wall surface S2 and the gap between the shielding member 110 and the inner bottom surface S3 and the inner wall surface S2 is diffused to the accommodating space S through the gap.

Gas G is introduced between the inner surface S0 of the cavity 101 and the shielding member 110 through the air inlet 1013, so that the gas G flows between the inner surface S0 and the shielding member 110, and then enters the accommodating space S of the cavity 101 A positive pressure is generated to assist most of the unreacted precursor G101 to be removed by the suction port 1011 and/or the hollow member 103. The remaining small amount of unreacted precursor G101 can adhere to the shield 110 instead of the inner surface S0 of the cavity 101, so as to reduce the accumulation of dirt in the cavity 101, thereby extending the life of the cavity 101 and allowing the cleaning cycle of the equipment Can be extended.

Please refer to Table 1 and Table 2 for the effect of the atomic layer deposition apparatus 1, 2 and the process method using it. Table 1 is a table of the thickness of a 20 nanometer thin film after the atomic layer deposition process. , The thickness uniformity of the wafer is 0.368 and achieves good results. Table 2 is a table of the thickness of the wafers with a film length of 120 nanometers after the atomic layer deposition process. As shown in Table 2, the thickness uniformity of the wafer is 0.407 and achieves good results. The average thickness 19.27nm Uniformity (U%) 0.368 Δthickness (ΔTHK) 0.29nm Table 1 The average thickness 121.97nm Uniformity (U%) 0.407 Δthickness (ΔTHK) 2.38nm Table 2

In summary, compared with the prior art, the technical effects of the atomic layer deposition apparatus according to the embodiment of the present invention are described as follows.

In the prior art, the atomic layer deposition process mostly uses a large cavity and passes a large amount of reaction precursors to react and deposit the substrate, so the cost of the process is higher, and the traditional method to reduce the cost is to reduce the cavity. However, this method often causes the precursor to produce turbulence inside the cavity, resulting in poor uniformity of the substrate after deposition. On the other hand, the atomic layer deposition device of the present invention can form a reaction space through the hollow part, the stopper and the carrier plate, so as to save the amount of the process precursor, and the hollow part is pumped to make the precursor form a stable, slow and uniform flow. Field to optimize the uniformity of the substrate after deposition.

The present invention has been disclosed in preferred embodiments above. However, those familiar with the art should understand that the above-mentioned embodiments are only used to describe the present invention and should not be interpreted as limiting the scope of the present invention. It should be noted that all changes and substitutions equivalent to the foregoing embodiments should be included in the scope of the present invention.

1: Atomic layer deposition device 101: Cavity 1011: Exhaust Port 1012: opening 1013: air inlet 102: heating table 103: Hollow parts 104: Precursor air inlet 1041: print head 105, 205: stop 1051: Contact 1052: connecting rod 1053: blocking part 106: Disk 107: Buffer unit 1071: Spring 1072: Linear slide rail buffer unit 108: Lifting device 109: Motor 110: Shield G: gas G101: Precursor O103: Exhaust hole O2051: Open hole R1051: Blocking ring S: accommodating space S0: inner surface S1: reaction space S2: inner wall S3: inner bottom surface W: Substrate

Fig. 1 is a schematic diagram of an atomic layer deposition apparatus according to an embodiment of the present invention.

Fig. 2 is a schematic diagram of an atomic layer deposition apparatus according to another embodiment of the present invention.

Fig. 3 is a schematic diagram of the stopper of the embodiment of the present invention.

Fig. 4 is a schematic top view of the stopper of the embodiment of the present invention.

Fig. 5 is a three-dimensional schematic diagram of the stopper of the embodiment of the present invention.

Fig. 6 is a three-dimensional schematic diagram of a stopper according to still another embodiment of the present invention.

Fig. 7 is a schematic diagram of an atomic layer deposition apparatus according to another embodiment of the present invention.

1: Atomic layer deposition device

101: Cavity

1011: Exhaust Port

1012: opening

1013: air inlet

102: heating table

103: Hollow parts

104: Precursor air inlet

1041: print head

105: stop

1051: Contact

1052: connecting rod

1053: blocking part

106: Disk

107: Buffer unit

1071: Spring

108: Lifting device

110: Shield

G: gas

G101: Precursor

O103: Exhaust hole

S: accommodating space

S0: inner surface

S1: reaction space

S2: inner wall

S3: inner bottom surface

W: Substrate

Claims (10)

An atomic layer deposition device, including: A cavity with an accommodating space; A spray head, fluidly connected to the accommodating space of the cavity, for conveying at least one precursor to the accommodating space; A heating station, which is arranged in the accommodating space of the cavity and has a top surface; A carrier plate located on the top surface of the heating table and used to carry a substrate, wherein the carrier plate is a round plate; At least one hollow component, fluidly connected to the accommodating space and higher than the carrier plate, and having at least one suction hole; and A stopper that is higher than the tray and surrounds the hollow part, and the stopper is connected to the cavity or the hollow part, and the stopper has a stopper portion and a contact portion; A lifting device connected to the heating platform, wherein the lifting device drives the heating platform and the carrier plate to approach the hollow part, and the carrier plate contacts the contact portion of the stopper and drives the stopper to move vertically to make the stopper A reaction space is enclosed by the parts and the carrier plate. The atomic layer deposition apparatus according to claim 1, wherein when the stopper is displaced downward by gravity, the stopper of the stopper is used to restrict the stopper to the cavity or the hollow part. An atomic layer deposition device, including: A cavity with an accommodating space; A spray head, fluidly connected to the accommodating space of the cavity, for conveying at least one precursor to the accommodating space; A heating station, which is arranged in the accommodating space of the cavity and has a top surface; A carrier plate located on the top surface of the heating table and used to carry at least one substrate, wherein the carrier plate is a round plate; At least one hollow component, fluidly connected to the accommodating space and higher than the carrier plate, and having at least one suction hole; A stopper, which is higher than the tray and surrounds the hollow part, and has a blocking part and a contact part; and A motor is connected to the blocking part of the blocking member and used for driving the vertical displacement of the blocking member. The atomic layer deposition apparatus according to claim 3, further comprising a lifting device connected to the heating table, wherein the lifting device drives the heating table and the carrier plate to approach the hollow part, and the stopper and the carrier plate surround out A reaction space. The atomic layer deposition apparatus according to claim 2 or 4, wherein the contact portion of the blocking member further includes a blocking ring adjacent to the carrier plate, so that when the blocking member and the carrier plate surround the reaction space, Reduce the leakage of the precursor from between the stopper and the carrier plate. The atomic layer deposition apparatus according to claim 1 or 3, further comprising a buffer unit located between the blocking portion and the contact portion of the stopper to buffer the stopper when the stopper is displaced downward. The atomic layer deposition apparatus according to claim 6, wherein the buffer unit is a spring or a linear slide buffer unit. The atomic layer deposition apparatus according to claim 1 or 3, wherein the contact part is an annular ring body, and the stopper further includes a plurality of connecting rods located between the stop part and the contact part. The atomic layer deposition apparatus according to claim 1 or 3, further comprising at least one opening in fluid communication with the accommodating space for introducing a gas between the cavity and the stopper, so as to prevent the precursor from being deposited on The stopper. The atomic layer deposition apparatus according to claim 1 or 3, further comprising at least one suction port, which is in fluid communication with the cavity and opposite to the nozzle, for discharging at least one fluid in the accommodating space.

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