TWM609507U - Atomic layer deposition apparatus - Google Patents

Abstract

This case discloses an atomic layer deposition equipment. The atomic layer deposition equipment includes a cavity, a substrate carrier, a hollow component and a stopper, wherein the hollow component has a suction hole and a part of its bottom is correspondingly disposed on the substrate carrier. The stopper is arranged corresponding to the suction hole, wherein the stopper has a longitudinal extension portion and a transverse extension portion. Furthermore, a motor can be connected above the hollow part to form an upper suction device. When the upper air extraction device is activated, an upper air extraction path can be formed between the stopper and the hollow part, and a lower air extraction path can be formed between the stopper and the substrate carrier. The upper and lower suction paths respectively include a first longitudinal distance and a second longitudinal distance, wherein the ratio between the first and second longitudinal distances can be adjusted to adjust the process fluid (for example, precursor) in the cavity Flow field, so that the substrate in the atomic layer deposition process can be uniformly deposited by the precursor.

Description

Atomic layer deposition equipment

The present invention relates to an atomic layer deposition equipment, in particular to an atomic layer deposition equipment having hollow parts and forming upper and lower suction paths to adjust the flow field of the process fluid.

The development of integrated circuit technology has matured, and current electronic products are developing towards the trend of light, thin, short, high performance, high reliability and intelligence. The miniaturization technology of transistors in electronic products is very important. Small size transistors will have an important impact on the performance of electronic products. When the size of the transistor becomes smaller, the current transmission time and energy consumption can be reduced to achieve fast calculations. And the effect of energy saving. In today's tiny transistors, some of the key thin film layers are almost only a few atoms thick, and one of the technologies to develop these microstructures is the atomic layer deposition process (ALD process).

The atomic layer deposition process is a technique in which substances are deposited layer by layer on the surface of the substrate in the form of single atoms. In the process, the precursor of the reaction is chemically adsorbed on the surface of the substrate or the previous layer of film. Produce thin and uniform films. In the atomic layer deposition process, a uniformly deposited film is an important basis for the reduction of transistors, and how to effectively control the uniformity of the film is an important issue in the development of today's transistors.

At present, the uniformity control of the atomic layer deposition process is still not perfect. One of the problems is that the flow field of the precursor is not properly controlled (for example, how does the precursor of the atomic layer deposition process draw out of the cavity without disturbing the uniform deposition behavior? body). The current atomic layer deposition equipment is designed to use a large closed chamber, which can accommodate a large number of precursors during the atomic layer deposition process, and ensures that the precursors stay in the chamber and contact the substrate for deposition, which is closed The type of cavity design can avoid the premature loss of precursors before the deposition and reaction are completed. When the deposition and reaction are completed, the precursors in the cavity are then discharged through the suction port at the bottom of the cavity. However, such a large closed cavity needs to use a large amount of precursors, which will make the process cost too high. Furthermore, if the time control of the discharge of the precursor is improper, a single suction device (the bottom suction port) may cause the precursor to form a turbulent flow, which will adversely affect the uniformity of the substrate deposition. In order to reduce the cost of the process, one of the methods is to reduce the volume of the cavity to reduce the amount of precursors. However, this method will cause the precursors to form turbulence, which will cause the precursors to repeatedly contact the substrate, and the substrate will be deposited uniformly. decline. Therefore, how to reduce the process cost and properly control the uniformity of the precursors deposited on the substrate are issues to be overcome in the current atomic layer deposition process.

Therefore, in order to overcome the deficiencies of the prior art, the embodiment of the present invention provides an atomic layer deposition equipment, so that the precursor and/or purge gas can present a controlled slow flow field to This adjusts the uniformity of the precursors deposited on the substrate. The atomic layer deposition equipment includes a cavity, a substrate carrier, a stopper, and a plurality of hollow parts, wherein the cavity has a bottom air extraction port, each of the hollow parts has an air extraction hole, and the substrate carrier connection block Wherein the stopper has a plurality of longitudinal extensions and each of the longitudinal extensions corresponds to the suction hole of the hollow part. The hollow part can be combined with the motor to form an upper air extraction device, wherein the motor is not limited to be connected to multiple or only one hollow part at the same time to form the upper air extraction device. A part of the bottom of the hollow component is arranged above the substrate carrier. When the upper air extraction device is activated, an upper air extraction path is formed between the stopper and the bottom of the hollow part, and a lower air extraction path is formed between the stopper and the substrate carrier. The two air extraction paths can make the atomic layer The precursor and/or scrubbing gas of the deposition process presents a controlled slow flow field to control the deposition behavior of the precursor and the flow behavior when evacuating the cavity, and optimize the atomic layer deposition process. Furthermore, the first longitudinal distance between the stopper and the hollow member can be adjusted, so that the ratio of the first longitudinal distance to the second longitudinal distance (between the stopper and the substrate carrier) can be adjusted, thereby Adjust the flow field of the precursor and/or scrubbing gas to optimize the uniformity of the precursor deposition on the substrate.

In the atomic layer deposition process, the process of depositing a precursor has five steps. After the substrate is placed on the substrate carrier, firstly, the cavity is continuously pumped down through the air outlet at the bottom of the cavity. . Then, the precursor is fed into the cavity from above the cavity to react and deposit the substrate. When the injected precursor reaches a predetermined amount, the supply of the precursor to the inside of the cavity is stopped. Further, after stopping the supply of precursors to the cavity for a period of time, the scrubbing gas is sent into the cavity from above the cavity to scrub the precursors in the cavity, and the upper air suction device is synchronized to the cavity. The interior of the body is pumped up to form and control the slow flow field of the precursor through the upper and lower pumping paths, and the precursor is pumped out of the cavity. Finally, after the supply of scrubbing gas to the cavity is stopped, the upward suction of the inside of the cavity by the upper air extraction device is stopped, wherein the time of the upward suction is longer than the time of supplying the scrubbing gas. Through the above steps, the process of providing one (one) precursor in the atomic layer deposition process can be completed. Similarly, the process of providing another precursor is the same as the above, and the process of each atomic layer deposition can also be repeated. Steps to complete the complete atomic layer deposition process.

Based on at least one of the foregoing objectives, the atomic layer deposition equipment provided by the embodiment of the present invention includes a cavity, a substrate stage, a lower suction device, an upper suction device, and a stopper. The cavity has a bottom suction port. The substrate carrier is arranged in the cavity. The lower air extraction device continuously and uninterruptedly pumps air down the cavity through the air extraction port at the bottom thereof. The upper suction device has a plurality of suction holes. The stopper is used to form at least one upper suction path between the stopper and the bottom of the upper suction device, and at least a lower suction path between the substrate carrier and the stopper. The upper air extraction device performs upper air extraction on the cavity when cleaning the precursor of the cavity.

Optionally, the stopper includes a transverse extension portion and a plurality of longitudinal extension portions connected to each other, wherein the transverse extension portion is connected to the outer edge of the substrate carrier, and each of the longitudinal extension portions corresponds to the suction of the upper suction device. One of the air holes to form an upper suction path between the stopper and the bottom of the upper suction device, and a lower suction path between the substrate carrier and the stopper

Optionally, there is a first longitudinal distance between the lateral extension part and the bottom of the upper suction device, and a second longitudinal distance between the lateral extension part and the substrate carrier is smaller than the first longitudinal distance.

Optionally, the atomic layer deposition apparatus further includes a shower head assembly to provide at least one precursor or scrubbing gas into the cavity.

Based on at least one of the foregoing objectives, the atomic layer deposition apparatus provided by the embodiment of the present invention includes a cavity, a substrate carrier, a stopper, and a plurality of hollow components. The cavity has a bottom suction port. The substrate carrier is arranged in the cavity. Each of the plurality of hollow parts has an air suction hole, and a part of the bottom of each hollow part is correspondingly disposed on the substrate carrier. The air extraction hole of each hollow member is correspondingly provided with a stopper to form an upper air extraction path between the stopper and the bottom of the hollow member, and a lower air extraction path between the substrate carrier and the stopper.

Optionally, the stopper has a transverse extension and a plurality of longitudinal extensions connected to each other, wherein the transverse extension is connected to the outer edge of the substrate carrier and the transverse extension is located below the hollow member and above the substrate carrier, To form the upper and lower suction path.

Optionally, there is a first longitudinal distance between the lateral extension part and the bottom of the hollow member, and a second longitudinal distance between the lateral extension part and the substrate carrier is smaller than the first longitudinal distance.

Optionally, the first longitudinal distance is adjustable based on the parameters of the atomic layer deposition process, and the second longitudinal distance is not adjustable.

Optionally, the atomic layer deposition equipment further includes a lifting device connected to the substrate carrier, wherein the lifting device drives the substrate carrier and the stopper to be close to or away from the hollow component to adjust the gap between the hollow component and the stopper. The first longitudinal distance.

Based on at least one of the foregoing objectives, the atomic layer deposition process method provided by the embodiment of the present invention includes step A-step E. Step A, continuous underground pumping is performed on the inside of the cavity, wherein the lower pumping is uninterrupted from the beginning to the end of the atomic layer deposition process. In step B, a precursor is provided to the substrate inside the cavity and the substrate on the substrate carrier in the cavity from above the cavity. Step C: Stop providing precursors to the cavity and the substrate in the cavity. Step D, after stopping the supply of precursors to the inside of the cavity for a period of time, provide cleaning gas to the inside of the cavity from above the cavity, wherein when the cleaning gas is started to be supplied to the inside of the cavity, the inside of the cavity is synchronized Pump up air to remove precursors. In step E, after stopping the supply of the scrubbing gas to the inside of the cavity, the upward pumping is stopped, wherein the time for the upward pumping is greater than or equal to the time for providing the scrubbing gas.

Optionally, in the step A, the inside of the cavity is pumped down through a lower pumping device. In the steps B and D, the precursor and the scrubbing gas are provided to the inside of the cavity through the nozzle assembly. In the step D, the inside of the cavity is pumped up through the upper pumping device.

Optionally, in the step D, the scrubbing gas is nitrogen.

In short, the atomic layer deposition equipment provided by the embodiments of the present invention can form an adjustable upper gas extraction path and a lower gas extraction path, so that the precursor and/or scrubbing gas in the atomic layer deposition process form a slow flow field In this way, the substrate is reacted and deposited in a dynamic manner, thereby regulating the uniformity of the substrate deposition during the atomic layer deposition process. Furthermore, the precursors that are not correctly deposited on the substrate but adhere to the substrate carrier can mostly adhere to the stopper, so that the stopper can be replaced when the machine is cleaned, avoiding direct replacement of the substrate carrier, so it can be cut costs. Therefore, the atomic layer deposition equipment of the present invention has advantages in processes and markets that require atomic layer deposition (such as integrated circuits).

In order to make the above and other objectives, features and advantages of the present invention more obvious and understandable, detailed descriptions are made as follows in conjunction with the accompanying drawings.

In order to fully understand the purpose, features and effects of the present invention, a detailed description of the present invention is given with the following specific embodiments and accompanying drawings. The description is as follows.

The model provides an atomic layer deposition equipment. The atomic layer deposition equipment creates a second air extraction device (including the upper air extraction device) that is different from the traditional deposition equipment (including only the lower air extraction device) through the hollow part and the motor, wherein the upper air extraction device is the same The stopper connected to the substrate carrier can create upper and lower suction paths. The atomic layer deposition equipment can further control the reaction and deposition of the substrate through the adjustment of the upper and lower gas extraction paths and the process (for example, the control of the time for providing precursors or scrubbing gas, or the adjustment of the time for pumping) The deposition status of the precursors further optimizes the uniformity of the substrate deposition.

First, please refer to Figure 1, Figure 2 and Figure 3. Figure 1 is a schematic diagram of an atomic layer deposition apparatus according to an embodiment of the present invention, Figure 2 is a partial schematic diagram of an atomic layer deposition apparatus according to another embodiment of the present invention, and Figure 3 It is a partial schematic diagram of an atomic layer deposition apparatus according to another embodiment of the present invention, and FIG. 3 is a partial schematic diagram of an atomic layer deposition apparatus according to another embodiment of the present invention. As shown in FIGS. 1 to 3, the atomic layer deposition apparatus 1 includes a cavity 101, a substrate stage 102, stoppers 1031, 2301, 3031, a plurality of hollow parts 103, and a shower head assembly 104. The cavity 101 has a bottom suction port O101 to discharge fluid to be discharged from the cavity. The bottom suction port O101 can form a lower suction device together with a power device (for example, a motor) to enhance the ability to discharge fluid. The substrate stage 102 is disposed in the cavity 101 for supporting the substrate W (for example, but not limited to a wafer). The outer edge of the substrate stage 102 is connected with stoppers 1031, 2301, 3031, and the stoppers 1031, 2301, 3031 include longitudinal extensions V1031, V2031, V3031 and transverse extensions H1031, H2031, H3031 connected to each other, and One of the lateral extension portions H1031, H2031, H3031 is connected to one end of the longitudinal extension portions V1031, V2031, V3031. Please refer to FIG. 4 for a more detailed description of the stopper. FIG. 4 is a schematic top view of the stopper according to the embodiment of the present invention. As shown in FIG. 4, the stopper 1301 is in a circular ring shape, and has a transverse extension H1031 and a plurality of longitudinal extensions V1031, wherein multiple positions of the transverse extension H1031 are connected to one end of the plurality of longitudinal extensions V1031, wherein The stopper 1031 is not limited to be integrally formed or composed of multiple components. Please continue to refer to FIGS. 1 to 3, there is no restriction on the appearance of the substrate carrier 102. It may have a substrate carrier portion 1021 and an outer edge portion 1022 as shown in FIG. 1, wherein the outer edge portion 1022 surrounds and connects the base The substrate carrier portion 1021 is higher than the outer edge portion 1022. In this embodiment, the substrate carrier 102 is connected to the lateral extension portion H1031 of the stopper 1031 by the substrate carrier portion 1021 thereof. The longitudinal section of the substrate stage 102 shown in FIG. 1 presents a shape similar to a "convex" shape, but the present invention is not limited to this.

Please continue to refer to FIGS. 1, 2 and 3, each of the hollow parts 103, 203, and 303 has an air extraction hole O103, O203, O303 and a top opening, and has a through air extraction hole O103, O203, O303 And a hollow area with an open top, where the hollow area can communicate with the outside. There is no restriction on the hollow path of the hollow area, and there is no restriction on the location of the air extraction holes (for example, the air extraction holes O103 and O203 of Figure 1 and Figure 2 are located at the bottom of the upper air extraction device, or the air extraction hole O303 of Figure 3 is located on the top The side of the suction device). Furthermore, the present invention does not limit the number of hollow parts. Each of the suction holes O103, O203, and O303 are individually arranged corresponding to one of the longitudinal extensions V1031, V2031, V3031 of the stoppers 1031, 2301, and 3031, so the number of the longitudinal extensions of the stoppers is the same as that of the hollow parts. The number is the same. There are adjustable first longitudinal distances d1, d3 between the lateral extensions H1031, H2031, H30131 of the stoppers 1031, 2031, and 3031 and the bottom of the hollow parts 103, 203, 303, wherein the first longitudinal distances d1, d3 , D5 is for example but not limited to 1-10 mm. In the present invention, there are no restrictions on the appearance of the hollow parts 103, 203, 303 and the stoppers 1031, 2031, 3031. For example, the hollow parts can have irregular shapes, and the outer shapes of the stoppers 1031, 2301, and 3031 can be The longitudinal section is L-shaped as shown in Figure 1, or the longitudinal section is inverted T-shaped or other shapes as shown in Figure 2. The hollow parts 103 and 203 are arranged above the substrate stages 102 and 202. More detailed description is that a part of the bottom of the hollow parts 103, 203 and 303 is correspondingly arranged on the substrate stages 102 and 202. Above 202 and 303. For example, when the substrate carrier has a "convex" shape in the longitudinal section as shown in FIG. 1, a part of the bottom of the hollow member 103 is correspondingly disposed on the outer edge of the substrate carrier 102部1022 above. Furthermore, there is a second longitudinal distance d2 between the laterally extending portion H1031 of the stopper 1031 and the outer edge portion 1022 of the substrate stage 102. Please continue to refer to FIGS. 1 to 3, the hollow parts 103, 203, and 303 can be connected to a power device (for example, a motor) through the top opening thereof to form an upper air extraction device. When the upper suction device is activated, the upper suction path P1031, P3031 can be formed between the bottom of the hollow part 103, 203, 303 of the upper suction device and the stoppers 1031, 2031, 3031, and the substrate carrier A lower pumping path P1032 is formed between 102 and the stopper 1031, wherein the upper pumping path P1031 and the lower pumping path P1032 can make the gas in the cavity 101 (for example, the precursor of the reaction) present a slow flow field, and make The gas is slowly drawn out of the cavity 101. Based on the parameters of the atomic layer deposition process, the first longitudinal distances d1, d3, d5 are adjustable, and the second longitudinal distances d2, d4, d6 are not adjustable, wherein when the first longitudinal distances d1, d3, d5 are greater than the first The two longitudinal distances d2, d4, d6 enable the upper air extraction device to achieve good control of the fluid flow field in the cavity 101, so that the atomic layer deposition equipment 1 achieves a good deposition uniformity when depositing the substrate W , Wherein the second longitudinal distance d2, d4, d6 is, for example, but not limited to 0.2-0.8 mm. More preferably, when the ratio of the first longitudinal distances d1, d3, d5 to the second longitudinal distances d2, d4, d6 is greater than 1.5, the upper air extraction device can achieve a better flow field of the fluid in the cavity 101 , And enable the atomic layer deposition equipment 1 to achieve better deposition uniformity when depositing the substrate W. Please note that the spirit of the stopper is to create the upper and lower air extraction paths together with the hollow parts, so there is no restriction on the connection and connection method of the hollow parts. The purpose of use is to create an upper and lower air extraction path. , Should be regarded as the idea and extension based on the new concept. Please continue to refer to FIG. 1A, the shower head assembly 104 is used to provide a precursor or scrubbing gas for the reaction of the atomic layer deposition process into the cavity.

Specifically, the atomic layer deposition apparatus 1 further includes a lifting device (not shown), which drives the substrate stage 102 and the stopper 1031 to approach or move away from the hollow member 103, so that the gap between the hollow member 103 and the stopper 1031 The first longitudinal distances d1, d3, and d5 are adjusted. In this way, the flow of the precursor guided by the upper suction path P1031 can be adjusted, and the deposition of the precursor that will react with the substrate W can be further adjusted, so that The uniformity of the deposition of the substrate W is optimized.

Next, please refer to FIG. 5 and cooperate with the equipment of FIG. 1 to understand the flow and method of the atomic layer deposition process. FIG. 5 is a trend diagram of the steps and time of the atomic layer deposition process according to the embodiment of the present invention. As shown in Figures 1A and 5, firstly, please refer to line 5 used to indicate the activation time of the lower pumping device. After the substrate W is placed on the substrate stage 102, the lower pumping device of the atomic layer deposition equipment penetrates the cavity. The suction port O101 at the bottom of the body 101 draws down the inside of the cavity 101, wherein the self-pumping process starts and ends without interruption, and serves as the first point for controlling the flow field of the gas in the cavity 101. Next, please refer to the line 1 indicating the time for injecting the first precursor G101. The first precursor G101 is provided from the top of the cavity 101 to the inside of the cavity 101 through the nozzle assembly 104, and diffuses above the substrate W to interact with The material on the surface of the substrate W reacts and deposits. Next, please continue to refer to line 1, when the first precursor G101 is injected into the cavity 101 to reach the target amount (the target amount is determined according to the process parameters), the shower head assembly 104 stops supplying the first precursor G101 into the cavity 101. Further, please refer to the line 3 used to indicate the time of injecting the scrubbing gas G102 and the line 4 used to indicate the start time of the upper air extraction device. After stopping the supply of the first precursor G101 into the cavity 101 for a period of time, The scrubbing gas G102 (for example, but not limited to nitrogen) is provided from above the cavity 101 to the inside of the cavity 101 through the nozzle assembly 104 to purge the first precursor G101, and simultaneously, the upper air extraction device At the middle position of the cavity 101 (ie, the position close to the horizontal plane of the substrate W), the inside of the cavity 101 is pumped up as the second point for controlling the flow field of the gas in the cavity 101. At this time, the up The pumping device can control the flow field of the first precursor G101 and the scrubbing gas G102, so that the first precursor G101 exhibits a slow flow field reaction, and the first precursor G101 can react with the substrate W in a dynamic manner. During the deposition, the first precursor G101 and the scrubbing gas G102 are slowly drawn out of the cavity 101 during the reaction. When the fluid in the cavity 101 exhibits a slow flow, its flow field can be stably controlled and turbulence can be avoided. The control of the flow field by the upper and lower pumping devices and the timing of opening and closing of the two pumping devices can make the uniformity of the substrate W subjected to atomic layer deposition to be well controlled. Then, please continue to refer to the lines line3 and line4. When the scrubbing gas G102 stops supplying to the cavity 101, the upper air extraction device stops the air extraction inside the cavity 101. In the present invention, the time for upward air extraction is longer than the time for providing scrubbing gas, but the present invention is not limited by this, and the time for upward air extraction can also be the same as the time for providing scrubbing gas. Next, please continue to refer to FIGS. 1A and 5 to understand the operation flow of the atomic layer deposition apparatus 1 after the second precursor is injected into the cavity 101. The flow of the steps of injecting the second precursor is similar to that of injecting the first precursor. Process. Please refer to line 2 indicating the time for injecting the second precursor. After the scrubbing gas G102 stops supplying to the cavity 101 for a period of time, and the upper air extraction device stops pumping the inside of the cavity 101, the second The precursor is provided from above the cavity 101 to the inside of the cavity 101 through the shower head assembly 104, and diffuses above the substrate W to react and deposit with the material on the surface of the substrate W. Then, when the second precursor is injected into the cavity 101 to reach the target amount, the shower head assembly 104 stops supplying the second precursor into the cavity 101. Further, referring to lines line 3 and line 4, after stopping the supply of the second precursor into the cavity 101 for a period of time, the scrubbing gas is supplied to the inside of the cavity 101 from the top of the cavity 101 through the nozzle assembly 104. The second precursor is scrubbed. Simultaneously, the upper air extraction device is at the middle position of the cavity 101 (that is, close to the horizontal plane of the substrate W) to pump up the inside of the cavity 101 to control the second precursor and The flow field of scrubbing gas. Next, please continue to refer to the lines line3 and line4. When the scrubbing gas is stopped from being supplied to the cavity 101, the upper air extraction device stops pumping air inside the cavity 101. In the present invention, the time for upward air extraction is longer than the time for providing scrubbing gas, but the present invention is not limited by this, and the time for upward air extraction can also be the same as the time for providing scrubbing gas. After the first precursor and the second precursor complete the reaction and deposition on the surface of the substrate W, a complete cycle of the atomic layer deposition process is reached, and the steps of each subsequent cycle are the same as the above.

Please refer to Table 1 for the effect of the atomic layer deposition equipment 1 and the process method using it. Table 1 is the wafer thickness table of the 12-inch silicon wafer after the atomic layer deposition process. After the atomic layer deposition process on the wafer, the thickness uniformity of the wafer was 0.34686 and achieved good results. Substrate: 12-inch silicon wafer Wafer center thickness 19.80nm The thickness of the right side of the wafer 19.81nm Left side thickness of wafer 19.97 nm Wafer bottom thickness 19.89nm Top thickness of wafer 19.88nm Average wafer thickness 19.87nm Wafer thickness uniformity (U%) 0.34686 Table 1

In summary, compared with the prior art, the technical effects of the atomic layer deposition equipment described in the embodiment of the present invention are described as follows.

In the prior art, the atomic layer deposition process usually uses a large cavity and passes a large amount of reaction precursors to react and deposit the substrate, so the cost of the process is higher, and the traditional method to reduce the cost is to reduce the cavity. However, this method often causes the precursor to produce turbulence in the cavity, resulting in poor uniformity of the substrate after deposition. On the other hand, the atomic layer deposition equipment of the present invention does not need to react in a large cavity, and only needs to form a stable, slow and uniform flow field of the precursor through an air extraction device to optimize the uniformity of the substrate after deposition. Furthermore, the precursors that are not correctly deposited on the substrate but adhere to the substrate carrier can mostly adhere to the stopper, so that the stopper can be replaced when the machine is cleaned, avoiding direct replacement of the substrate carrier, so it can be cut costs.

The present invention has been disclosed in preferred embodiments above. However, those familiar with the art should understand that the above-mentioned embodiments are only used to describe the present invention and should not be interpreted as limiting the scope of the present invention. It should be noted that all changes and substitutions equivalent to the foregoing embodiments should be included in the scope of the present invention.

1: Atomic layer deposition equipment 101: Cavity 102, 202, 302: substrate stage 1021: Substrate bearing part 1022: Outer edge 103: Hollow parts 1031, 2031, 3031: stopper 104: print head assembly d1, d3, d5: the first longitudinal distance d2, d4, d6: second longitudinal distance G101: The first precursor G102: scrubbing gas H1031, H2031, H3031: horizontal extension Line1~Line5: Line O101: Bottom suction port O103, O203, O303: suction hole P1031, P3031: Upper air extraction path P1032: Lower suction path V1031, V2031, V3031: longitudinal extension W: Substrate

Fig. 1 is a schematic diagram of an atomic layer deposition apparatus according to an embodiment of the present invention.

Fig. 2 is a partial schematic diagram of an atomic layer deposition apparatus according to another embodiment of the present invention.

Fig. 3 is a partial schematic diagram of an atomic layer deposition apparatus according to another embodiment of the present invention.

Fig. 4 is a schematic top view of the stopper of the embodiment of the present invention.

FIG. 5 is a diagram showing the trend relationship between the steps of the atomic layer deposition process and the time in the embodiment of the present invention.

1: Atomic layer deposition equipment

101: Cavity

102: substrate stage

1021: Substrate bearing part

1022: Outer edge

103: Hollow parts

1031: stop

104: print head assembly

d1: first longitudinal distance

d2: second longitudinal distance

G101: scrubbing gas

H1031: Lateral extension

O101: Bottom suction port

O103: Exhaust hole

P1031: Upper exhaust path

P1032: Lower suction path

V1031: Longitudinal extension

W: Substrate

Claims (10)

An atomic layer deposition equipment, including: A cavity with a bottom suction port; A substrate carrier set in the cavity; The bottom air extraction device continuously and uninterruptedly pumps down the cavity through the bottom air extraction port; An upper air extraction device with a plurality of air extraction holes; and A stopper is arranged in the cavity, wherein at least one upper suction path is formed between the stopper and the upper suction device. The atomic layer deposition apparatus according to claim 1, wherein the stopper includes a lateral extension portion and a plurality of longitudinal extension portions connected to each other, the lateral extension portion is connected to the outer edge of the substrate carrier, and the longitudinal extension portions are respectively Corresponding to the suction hole of the upper suction device, the upper suction path is formed between the stopper and the bottom of the upper suction device, and a lower suction path is formed between the substrate carrier and the stopper . The atomic layer deposition apparatus according to claim 2, wherein there is a first longitudinal distance between the lateral extension portion and the bottom of the upper suction device, and the width between the lateral extension portion and the substrate carrier is smaller than the first longitudinal distance A second longitudinal distance of a longitudinal distance. The atomic layer deposition equipment as described in claim 1, further including: A nozzle assembly provides at least one precursor or a scrubbing gas into the cavity. The atomic layer deposition apparatus according to claim 1, wherein the air extraction hole is located at the bottom or side of the upper air extraction device. An atomic layer deposition equipment, including: A cavity with a bottom suction port; A substrate carrier set in the cavity; A plurality of hollow parts, the hollow parts have an air suction hole, and the bottom of the hollow parts is arranged above the substrate carrier; and A stopper is arranged in the cavity, wherein the air extraction holes of the hollow parts correspond to the stopper, and an upper air extraction path is formed between the stopper and the hollow part. The atomic layer deposition apparatus according to claim 6, wherein the stopper has a lateral extension portion and a plurality of longitudinal extension portions connected to each other, and the lateral extension portion is connected to the outer edge of the substrate carrier and is located between the hollow member and Between the substrate carrier. The atomic layer deposition apparatus according to claim 7, wherein there is a first longitudinal distance between the laterally extending portion and the bottom of the hollow member, and a distance between the laterally extending portion and the substrate carrier is smaller than the first A second longitudinal distance of the longitudinal distance. The atomic layer deposition apparatus according to claim 8, wherein the atomic layer deposition apparatus further includes a lifting device connected to the substrate carrier, wherein the lifting device drives the substrate carrier and the stopper to approach or move away from the hollow Part to adjust the first longitudinal distance between the hollow part and the stopper. The atomic layer deposition apparatus according to claim 6, wherein the air extraction hole is located at the bottom or side of the upper air extraction device.

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