TWM612787U - Grating type luminous efficiency detection device - Google Patents
Grating type luminous efficiency detection device Download PDFInfo
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- TWM612787U TWM612787U TW110201471U TW110201471U TWM612787U TW M612787 U TWM612787 U TW M612787U TW 110201471 U TW110201471 U TW 110201471U TW 110201471 U TW110201471 U TW 110201471U TW M612787 U TWM612787 U TW M612787U
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Abstract
一種光柵式發光效率檢測裝置包括一置物平台、一光源、一物鏡、一光柵及一影像感測元件。置物平台用於放置一測試樣品。光源設置於置物平台之一側。物鏡設置於置物平台之一側,物鏡可移動以進行對焦。光柵設置於物鏡之一側。影像感測元件設置於光柵之一側。 A grating-type luminous efficiency detection device includes an object platform, a light source, an objective lens, a grating and an image sensing element. The storage platform is used to place a test sample. The light source is arranged on one side of the storage platform. The objective lens is arranged on one side of the object platform, and the objective lens can be moved for focusing. The grating is arranged on one side of the objective lens. The image sensing element is arranged on one side of the grating.
Description
本創作係有關於一種光柵式發光效率檢測裝置。 This creation is related to a grating-type luminous efficiency detection device.
微發光二極體(Micro LED)顯示技術為一下世代最重要的顯示科技,運用此技術所生產的微發光二極體顯示器(Micro LED Display),其相對於TFT-LCD顯示器及OLED顯示器具有高亮度、低功耗、高解析度及高飽和度等優點。微發光二極體(Micro LED)顯示技術其原理主要是將LED結構設計微小化及陣列化,將LED尺寸縮小至100微米以下等級(即原本LED的百分之一),以一台75英吋4K解析度的大型顯示器來說,至少需要使用到2400萬顆的紅藍綠微發光二極體(Micro LED)晶片,每顆紅藍綠微發光二極體(Micro LED)晶片是否能正確發光、發光強度甚至發光波長,都將大大影響微發光二極體顯示器(Micro LED Display)的影像品質,所以微發光二極體(Micro LED)晶片的檢測在生產過程中將會是極為重要的一個製程。由於微發光二極體顯示器(Micro LED Display)所使用的微發光二極體(Micro LED)晶片數量極為龐大以及微發光二極體(Micro LED)晶片極為微小,以致於測試費時且難度高,目前尚未有快速又準確的方法可用於測試微發光二極體(Micro LED)晶片是否發光及其發光強度。 Micro LED display technology is the most important display technology in the next generation. The Micro LED Display produced by this technology has a higher performance than TFT-LCD displays and OLED displays. Brightness, low power consumption, high resolution and high saturation, etc. The principle of Micro LED display technology is to miniaturize and array the LED structure design, and reduce the LED size to below 100 microns (that is, one percent of the original LED). For a large display with a 4K resolution, at least 24 million red, blue, and green micro-light-emitting diode (Micro LED) chips are required. Is each red, blue-green and micro-light-emitting diode (Micro LED) chip correct? Luminescence, luminous intensity and even luminous wavelength will greatly affect the image quality of Micro LED Display, so the inspection of Micro LED chips will be extremely important in the production process. A process. Due to the extremely large number of Micro LED chips used in Micro LED Displays and the extremely small micro LED chips, it is time-consuming and difficult to test. At present, there is no fast and accurate method for testing whether a micro-light-emitting diode (Micro LED) chip emits light and its luminous intensity.
有鑑於此,本創作之主要目的在於提供一種光柵式發光效 率檢測裝置,不需通電及接觸微發光二極體(Micro LED)晶片,即能快速的檢測微發光二極體(Micro LED)晶片是否發光及其發光強度,具有速度快與準確度高等優點,可大幅提升檢測速度及可靠度。 In view of this, the main purpose of this creation is to provide a raster-style luminous effect The rate detection device does not need to be energized and contact with the Micro LED chip, that is, it can quickly detect whether the Micro LED chip is luminous and its luminous intensity. It has the advantages of fast speed and high accuracy. , Which can greatly improve the detection speed and reliability.
本創作之光柵式發光效率檢測裝置包括一置物平台、一光源、一物鏡、一光柵及一影像感測元件。置物平台用於放置一測試樣品。光源設置於置物平台之一側。物鏡設置於置物平台之一側,物鏡可移動以進行對焦。光柵設置於物鏡之一側。影像感測元件設置於光柵之一側。 The grating-type luminous efficiency detection device of this invention includes an object platform, a light source, an objective lens, a grating and an image sensing element. The storage platform is used to place a test sample. The light source is arranged on one side of the storage platform. The objective lens is arranged on one side of the object platform, and the objective lens can be moved for focusing. The grating is arranged on one side of the objective lens. The image sensing element is arranged on one side of the grating.
其中物鏡之放大倍率可為5倍、10倍或5至10倍之間。 The magnification of the objective lens can be 5 times, 10 times, or between 5 and 10 times.
其中光源為一雷射光源或一LED光源。 The light source is a laser light source or an LED light source.
其中雷射光源波長可為375nm、405nm或532nm,LED光源波長可為375nm、405nm或532nm。 The wavelength of the laser light source can be 375nm, 405nm or 532nm, and the wavelength of the LED light source can be 375nm, 405nm or 532nm.
本創作之光柵式發光效率檢測裝置,可更包括一單模光纖及一光纖準直器,單模光纖設置於光源之一側,光纖準直器設置於單模光纖之一側,光源發出之光束先經過單模光纖傳輸,再通過光纖準直器照射至測試樣品。 The grating-type luminous efficiency detection device of this invention may further include a single-mode fiber and a fiber collimator. The single-mode fiber is set on one side of the light source, and the fiber collimator is set on one side of the single-mode fiber. The light beam is transmitted through the single-mode fiber, and then irradiated to the test sample through the fiber collimator.
其中光柵為一穿透式光柵或一反射式光柵。 The grating is a transmissive grating or a reflective grating.
其中影像感測元件可沿著一軸線移動。 The image sensing element can move along an axis.
其中影像感測元件為一電荷耦合元件(CCD)或為一互補式金氧半導體(CMOS)影像感測元件。 The image sensor is a charge coupled device (CCD) or a complementary metal oxide semiconductor (CMOS) image sensor.
其中影像感測元件解析度為1024像素×1024像素或2048像素×2048像素。 The resolution of the image sensor element is 1024 pixels×1024 pixels or 2048 pixels×2048 pixels.
為使本創作之上述目的、特徵、和優點能更明顯易懂,下 文特舉較佳實施例並配合所附圖式做詳細說明。 In order to make the above-mentioned purpose, features, and advantages of this creation more obvious and understandable, the following Wen specially gives a detailed description of the preferred embodiments in conjunction with the accompanying drawings.
1:光柵式發光效率檢測裝置 1: Grating type luminous efficiency detection device
10:置物平台 10: Storage platform
20:光源 20: light source
201:雷射 201: Laser
2011:雷射光束 2011: laser beam
202:單模光纖 202: Single-mode fiber
203:光纖準直器 203: Fiber collimator
30:物鏡 30: Objective
40:光柵 40: grating
50:影像感測元件 50: Image sensor
DUT:測試樣品 DUT: test sample
M:反射鏡 M: mirror
VLB:可見光 VLB: Visible light
第1圖係依據本創作之光柵式發光效率檢測裝置之一實施例之示意圖。 Figure 1 is a schematic diagram of an embodiment of a grating-type luminous efficiency detection device based on this creation.
第2圖係依據本創作之光柵式發光效率檢測裝置之實施例於測試時之光學路徑示意圖。 Figure 2 is a schematic diagram of the optical path of the embodiment of the grating-type luminous efficiency detection device according to the present creation during testing.
有些材料可經由高能量短波長光源直接照射,使材料發出螢光,這種由光激發而發光的過程叫做光致發光(Photoluminescence),藉由分析激發出的螢光,可由光譜特徵來得知材料的特性、載子傳輸路徑或是載子生命周期等重要資訊,所以光致發光常用於探測材料之電子結構,此方法的優點為不需接觸材料也不損壞材料。本創作之光柵式發光效率檢測裝置即利用光致發光(Photoluminescence)原理,經由量測測試樣品所發出的螢光來判斷測試樣品是否能發光、發光強度及發光波長,特別是應用在微發光二極體(Micro LED)晶片之檢測,可大幅縮短檢測時間。 Some materials can be directly irradiated by a high-energy short-wavelength light source to cause the material to emit fluorescence. This process of luminescence excited by light is called photoluminescence. By analyzing the excited fluorescence, the material can be known from the spectral characteristics. Important information such as the characteristics of the carrier, the carrier transmission path or the carrier life cycle, so photoluminescence is often used to detect the electronic structure of the material. The advantage of this method is that it does not need to contact the material and does not damage the material. The grating-type luminous efficiency detection device of this creation uses the principle of photoluminescence to determine whether the test sample can emit light, the luminous intensity, and the luminous wavelength by measuring the fluorescence emitted by the test sample, especially for micro-luminescence two The inspection of the polar body (Micro LED) chip can greatly shorten the inspection time.
請參閱第1圖,第1圖係本創作之光柵式發光效率檢測裝置之一實施例之示意圖。光柵式發光效率檢測裝置1包括一置物平台10、一光源20、一物鏡30、一光柵40及一影像感測元件50。
Please refer to Figure 1. Figure 1 is a schematic diagram of an embodiment of the grating-type luminous efficiency detection device created by this invention. The grating-type luminous
置物平台10用於置放一測試樣品(未圖示),此測試樣品可為一微發光二極體(Micro LED)晶片。
The
光源20設置於置物平台10之一側,光源20包括一雷射201、一單模光纖202以及一光纖準直器203,單模光纖202之一端與雷射
201連接,另一端與光纖準直器203連接,雷射201發出雷射光,雷射光先耦合進入單模光纖202,單模光纖202將雷射光傳輸至另一端,最後經由光纖準直器203射出。
The
物鏡30設置於置物平台10之一側,物鏡30之放大倍率可為5倍、10倍或5至10倍之間,物鏡30用以聚焦可見光,使測試樣品(未圖示)能清晰成像。也可以改用其他放大倍率之物鏡,亦應屬本創作之範疇。
The
光柵40設置於物鏡30之一側,光柵40用以測量頻譜,光柵40可以為穿透式光柵或反射式光柵。
The grating 40 is arranged on one side of the
影像感測元件50設置於光柵40之一側,影像感測元件50可為一電荷耦合元件(CCD)或為一互補式金氧半導體(CMOS)影像感測元件,影像感測元件50接收來自物鏡30的可見光,再將可見光轉換成一影像訊號。
The
底下將更進一步詳細說明光柵式發光效率檢測裝置,應用於微發光二極體(Micro Light Emitting Diode)晶片檢測之過程。 The following will further explain the grating-type luminous efficiency detection device applied to the micro light emitting diode (Micro Light Emitting Diode) wafer detection process.
請參閱第2圖,第2圖係依據本發明之光柵式發光效率檢測裝置之實施例於測試時之光學路徑示意圖。首先將一反射鏡M置於置物平台10,打開雷射201電源,使雷射201發出雷射光,雷射光先耦合進入單模光纖202,單模光纖202將雷射光傳輸至另一端,最後經由光纖準直器203射出雷射光束2011,接著調整光纖準直器203使雷射光束2011射向反射鏡M,再移動物鏡30,以調整物鏡30與反射鏡M之距離,使得反射鏡M上被雷射光束2011照射之區域能於影像感測元件50清晰成像,此時影像感測元件50將同時輸出影像訊號至一控制電腦(未圖示),接著將影像感
測元件50沿著一軸線(未圖示)移動,使得影像感測元件50測得光譜影像,控制電腦(未圖示)即可同時測得未放置測試樣品之光譜影像訊號IO,最後關閉雷射201電源。值得注意的是,因為光通過光柵後,有些光會偏折向外,造成影像感測元件50可能會接收不到,所以需要移動影像感測元件50以接收這些光。
Please refer to FIG. 2. FIG. 2 is a schematic diagram of the optical path of the embodiment of the grating-type luminous efficiency detection device according to the present invention during testing. First place a reflector M on the
接著先將反射鏡M移開置物平台10,再將一測試樣品DUT,例如為一微發光二極體(Micro LED)晶片置於置物平台10,打開雷射201電源,使得雷射光束2011照射微發光二極體(Micro LED)晶片,當雷射光束2011照射微發光二極體(Micro LED)晶片時,基於光致發光(Photoluminescence)作用,微發光二極體(Micro LED)晶片將發出可見光VLB,可見光VLB先通過物鏡30,再通過光柵40,最後聚焦成像於影像感測元件50,影像感測元件50再將影像訊號輸出至控制電腦(未圖示),接著將影像感測元件50沿著一軸線(未圖示)移動,使得影像感測元件50測得微發光二極體(Micro LED)晶片所發出可見光VLB之光譜影像,控制電腦(未圖示)即可同時測得微發光二極體(Micro LED)晶片所發出可見光VLB之光譜影像訊號IE,最後關閉雷射201電源。
Then first move the mirror M away from the
經由光柵40所測得的光譜影像訊號強度IE,可代表微發光二極體(Micro LED)晶片所發出的可見光強度,由測量到的IE/IO之比值大小,可進一步判斷出微發光二極體(Micro LED)晶片是否明確發光、發光強度及發光波長。 The intensity of the spectral image signal I E measured by the grating 40 can represent the intensity of visible light emitted by a micro-light emitting diode (Micro LED) chip. The measured I E /I O ratio can further determine the micro Whether the light emitting diode (Micro LED) chip has clear light emission, luminous intensity and luminous wavelength.
雖然本創作已以較佳實施例揭露如上,然其並非用以限定本創作,任何於其所屬技術領域中具有通常知識者,在不脫離本創作之精 神和範圍內,仍可作些許的更動與潤飾,因此本創作之保護範圍當視後附之申請專利範圍所界定者為準。 Although this creation has been disclosed in a preferred embodiment as above, it is not intended to limit this creation. Anyone with ordinary knowledge in the technical field to which they belong will not deviate from the essence of this creation. Within the scope of Shenhe, some changes and modifications can still be made. Therefore, the scope of protection of this creation shall be subject to the scope of the attached patent application.
1:光柵式發光效率檢測裝置 1: Grating type luminous efficiency detection device
10:置物平台 10: Storage platform
20:光源 20: light source
201:雷射 201: Laser
202:單模光纖 202: Single-mode fiber
203:光纖準直器 203: Fiber collimator
30:物鏡 30: Objective
40:光柵 40: grating
50:影像感測元件 50: Image sensor
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