TWM612787U - Grating type luminous efficiency detection device - Google Patents

Grating type luminous efficiency detection device Download PDF

Info

Publication number
TWM612787U
TWM612787U TW110201471U TW110201471U TWM612787U TW M612787 U TWM612787 U TW M612787U TW 110201471 U TW110201471 U TW 110201471U TW 110201471 U TW110201471 U TW 110201471U TW M612787 U TWM612787 U TW M612787U
Authority
TW
Taiwan
Prior art keywords
grating
detection device
luminous efficiency
light source
efficiency detection
Prior art date
Application number
TW110201471U
Other languages
Chinese (zh)
Inventor
陳景翔
郭勁甫
Original Assignee
佰驟智能有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 佰驟智能有限公司 filed Critical 佰驟智能有限公司
Priority to TW110201471U priority Critical patent/TWM612787U/en
Publication of TWM612787U publication Critical patent/TWM612787U/en

Links

Images

Landscapes

  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)

Abstract

一種光柵式發光效率檢測裝置包括一置物平台、一光源、一物鏡、一光柵及一影像感測元件。置物平台用於放置一測試樣品。光源設置於置物平台之一側。物鏡設置於置物平台之一側,物鏡可移動以進行對焦。光柵設置於物鏡之一側。影像感測元件設置於光柵之一側。 A grating-type luminous efficiency detection device includes an object platform, a light source, an objective lens, a grating and an image sensing element. The storage platform is used to place a test sample. The light source is arranged on one side of the storage platform. The objective lens is arranged on one side of the object platform, and the objective lens can be moved for focusing. The grating is arranged on one side of the objective lens. The image sensing element is arranged on one side of the grating.

Description

光柵式發光效率檢測裝置 Grating type luminous efficiency detection device

本創作係有關於一種光柵式發光效率檢測裝置。 This creation is related to a grating-type luminous efficiency detection device.

微發光二極體(Micro LED)顯示技術為一下世代最重要的顯示科技,運用此技術所生產的微發光二極體顯示器(Micro LED Display),其相對於TFT-LCD顯示器及OLED顯示器具有高亮度、低功耗、高解析度及高飽和度等優點。微發光二極體(Micro LED)顯示技術其原理主要是將LED結構設計微小化及陣列化,將LED尺寸縮小至100微米以下等級(即原本LED的百分之一),以一台75英吋4K解析度的大型顯示器來說,至少需要使用到2400萬顆的紅藍綠微發光二極體(Micro LED)晶片,每顆紅藍綠微發光二極體(Micro LED)晶片是否能正確發光、發光強度甚至發光波長,都將大大影響微發光二極體顯示器(Micro LED Display)的影像品質,所以微發光二極體(Micro LED)晶片的檢測在生產過程中將會是極為重要的一個製程。由於微發光二極體顯示器(Micro LED Display)所使用的微發光二極體(Micro LED)晶片數量極為龐大以及微發光二極體(Micro LED)晶片極為微小,以致於測試費時且難度高,目前尚未有快速又準確的方法可用於測試微發光二極體(Micro LED)晶片是否發光及其發光強度。 Micro LED display technology is the most important display technology in the next generation. The Micro LED Display produced by this technology has a higher performance than TFT-LCD displays and OLED displays. Brightness, low power consumption, high resolution and high saturation, etc. The principle of Micro LED display technology is to miniaturize and array the LED structure design, and reduce the LED size to below 100 microns (that is, one percent of the original LED). For a large display with a 4K resolution, at least 24 million red, blue, and green micro-light-emitting diode (Micro LED) chips are required. Is each red, blue-green and micro-light-emitting diode (Micro LED) chip correct? Luminescence, luminous intensity and even luminous wavelength will greatly affect the image quality of Micro LED Display, so the inspection of Micro LED chips will be extremely important in the production process. A process. Due to the extremely large number of Micro LED chips used in Micro LED Displays and the extremely small micro LED chips, it is time-consuming and difficult to test. At present, there is no fast and accurate method for testing whether a micro-light-emitting diode (Micro LED) chip emits light and its luminous intensity.

有鑑於此,本創作之主要目的在於提供一種光柵式發光效 率檢測裝置,不需通電及接觸微發光二極體(Micro LED)晶片,即能快速的檢測微發光二極體(Micro LED)晶片是否發光及其發光強度,具有速度快與準確度高等優點,可大幅提升檢測速度及可靠度。 In view of this, the main purpose of this creation is to provide a raster-style luminous effect The rate detection device does not need to be energized and contact with the Micro LED chip, that is, it can quickly detect whether the Micro LED chip is luminous and its luminous intensity. It has the advantages of fast speed and high accuracy. , Which can greatly improve the detection speed and reliability.

本創作之光柵式發光效率檢測裝置包括一置物平台、一光源、一物鏡、一光柵及一影像感測元件。置物平台用於放置一測試樣品。光源設置於置物平台之一側。物鏡設置於置物平台之一側,物鏡可移動以進行對焦。光柵設置於物鏡之一側。影像感測元件設置於光柵之一側。 The grating-type luminous efficiency detection device of this invention includes an object platform, a light source, an objective lens, a grating and an image sensing element. The storage platform is used to place a test sample. The light source is arranged on one side of the storage platform. The objective lens is arranged on one side of the object platform, and the objective lens can be moved for focusing. The grating is arranged on one side of the objective lens. The image sensing element is arranged on one side of the grating.

其中物鏡之放大倍率可為5倍、10倍或5至10倍之間。 The magnification of the objective lens can be 5 times, 10 times, or between 5 and 10 times.

其中光源為一雷射光源或一LED光源。 The light source is a laser light source or an LED light source.

其中雷射光源波長可為375nm、405nm或532nm,LED光源波長可為375nm、405nm或532nm。 The wavelength of the laser light source can be 375nm, 405nm or 532nm, and the wavelength of the LED light source can be 375nm, 405nm or 532nm.

本創作之光柵式發光效率檢測裝置,可更包括一單模光纖及一光纖準直器,單模光纖設置於光源之一側,光纖準直器設置於單模光纖之一側,光源發出之光束先經過單模光纖傳輸,再通過光纖準直器照射至測試樣品。 The grating-type luminous efficiency detection device of this invention may further include a single-mode fiber and a fiber collimator. The single-mode fiber is set on one side of the light source, and the fiber collimator is set on one side of the single-mode fiber. The light beam is transmitted through the single-mode fiber, and then irradiated to the test sample through the fiber collimator.

其中光柵為一穿透式光柵或一反射式光柵。 The grating is a transmissive grating or a reflective grating.

其中影像感測元件可沿著一軸線移動。 The image sensing element can move along an axis.

其中影像感測元件為一電荷耦合元件(CCD)或為一互補式金氧半導體(CMOS)影像感測元件。 The image sensor is a charge coupled device (CCD) or a complementary metal oxide semiconductor (CMOS) image sensor.

其中影像感測元件解析度為1024像素×1024像素或2048像素×2048像素。 The resolution of the image sensor element is 1024 pixels×1024 pixels or 2048 pixels×2048 pixels.

為使本創作之上述目的、特徵、和優點能更明顯易懂,下 文特舉較佳實施例並配合所附圖式做詳細說明。 In order to make the above-mentioned purpose, features, and advantages of this creation more obvious and understandable, the following Wen specially gives a detailed description of the preferred embodiments in conjunction with the accompanying drawings.

1:光柵式發光效率檢測裝置 1: Grating type luminous efficiency detection device

10:置物平台 10: Storage platform

20:光源 20: light source

201:雷射 201: Laser

2011:雷射光束 2011: laser beam

202:單模光纖 202: Single-mode fiber

203:光纖準直器 203: Fiber collimator

30:物鏡 30: Objective

40:光柵 40: grating

50:影像感測元件 50: Image sensor

DUT:測試樣品 DUT: test sample

M:反射鏡 M: mirror

VLB:可見光 VLB: Visible light

第1圖係依據本創作之光柵式發光效率檢測裝置之一實施例之示意圖。 Figure 1 is a schematic diagram of an embodiment of a grating-type luminous efficiency detection device based on this creation.

第2圖係依據本創作之光柵式發光效率檢測裝置之實施例於測試時之光學路徑示意圖。 Figure 2 is a schematic diagram of the optical path of the embodiment of the grating-type luminous efficiency detection device according to the present creation during testing.

有些材料可經由高能量短波長光源直接照射,使材料發出螢光,這種由光激發而發光的過程叫做光致發光(Photoluminescence),藉由分析激發出的螢光,可由光譜特徵來得知材料的特性、載子傳輸路徑或是載子生命周期等重要資訊,所以光致發光常用於探測材料之電子結構,此方法的優點為不需接觸材料也不損壞材料。本創作之光柵式發光效率檢測裝置即利用光致發光(Photoluminescence)原理,經由量測測試樣品所發出的螢光來判斷測試樣品是否能發光、發光強度及發光波長,特別是應用在微發光二極體(Micro LED)晶片之檢測,可大幅縮短檢測時間。 Some materials can be directly irradiated by a high-energy short-wavelength light source to cause the material to emit fluorescence. This process of luminescence excited by light is called photoluminescence. By analyzing the excited fluorescence, the material can be known from the spectral characteristics. Important information such as the characteristics of the carrier, the carrier transmission path or the carrier life cycle, so photoluminescence is often used to detect the electronic structure of the material. The advantage of this method is that it does not need to contact the material and does not damage the material. The grating-type luminous efficiency detection device of this creation uses the principle of photoluminescence to determine whether the test sample can emit light, the luminous intensity, and the luminous wavelength by measuring the fluorescence emitted by the test sample, especially for micro-luminescence two The inspection of the polar body (Micro LED) chip can greatly shorten the inspection time.

請參閱第1圖,第1圖係本創作之光柵式發光效率檢測裝置之一實施例之示意圖。光柵式發光效率檢測裝置1包括一置物平台10、一光源20、一物鏡30、一光柵40及一影像感測元件50。 Please refer to Figure 1. Figure 1 is a schematic diagram of an embodiment of the grating-type luminous efficiency detection device created by this invention. The grating-type luminous efficiency detection device 1 includes an object platform 10, a light source 20, an objective lens 30, a grating 40 and an image sensor 50.

置物平台10用於置放一測試樣品(未圖示),此測試樣品可為一微發光二極體(Micro LED)晶片。 The storage platform 10 is used to place a test sample (not shown), and the test sample may be a micro-light-emitting diode (Micro LED) chip.

光源20設置於置物平台10之一側,光源20包括一雷射201、一單模光纖202以及一光纖準直器203,單模光纖202之一端與雷射 201連接,另一端與光纖準直器203連接,雷射201發出雷射光,雷射光先耦合進入單模光纖202,單模光纖202將雷射光傳輸至另一端,最後經由光纖準直器203射出。 The light source 20 is arranged on one side of the object platform 10. The light source 20 includes a laser 201, a single-mode fiber 202, and a fiber collimator 203. One end of the single-mode fiber 202 is connected to the laser 201 is connected, and the other end is connected to the fiber collimator 203. The laser 201 emits laser light. The laser light is first coupled into the single-mode fiber 202, and the single-mode fiber 202 transmits the laser light to the other end, and finally exits through the fiber collimator 203 .

物鏡30設置於置物平台10之一側,物鏡30之放大倍率可為5倍、10倍或5至10倍之間,物鏡30用以聚焦可見光,使測試樣品(未圖示)能清晰成像。也可以改用其他放大倍率之物鏡,亦應屬本創作之範疇。 The objective lens 30 is arranged on one side of the object platform 10, and the magnification of the objective lens 30 can be 5 times, 10 times, or between 5 and 10 times. The objective lens 30 is used to focus visible light so that the test sample (not shown) can be clearly imaged. You can also use other magnification objectives, which should also fall within the scope of this creation.

光柵40設置於物鏡30之一側,光柵40用以測量頻譜,光柵40可以為穿透式光柵或反射式光柵。 The grating 40 is arranged on one side of the objective lens 30, and the grating 40 is used to measure the frequency spectrum. The grating 40 can be a transmissive grating or a reflective grating.

影像感測元件50設置於光柵40之一側,影像感測元件50可為一電荷耦合元件(CCD)或為一互補式金氧半導體(CMOS)影像感測元件,影像感測元件50接收來自物鏡30的可見光,再將可見光轉換成一影像訊號。 The image sensor 50 is disposed on one side of the grating 40. The image sensor 50 can be a charge coupled device (CCD) or a complementary metal oxide semiconductor (CMOS) image sensor. The image sensor 50 receives data from The visible light of the objective lens 30 converts the visible light into an image signal.

底下將更進一步詳細說明光柵式發光效率檢測裝置,應用於微發光二極體(Micro Light Emitting Diode)晶片檢測之過程。 The following will further explain the grating-type luminous efficiency detection device applied to the micro light emitting diode (Micro Light Emitting Diode) wafer detection process.

請參閱第2圖,第2圖係依據本發明之光柵式發光效率檢測裝置之實施例於測試時之光學路徑示意圖。首先將一反射鏡M置於置物平台10,打開雷射201電源,使雷射201發出雷射光,雷射光先耦合進入單模光纖202,單模光纖202將雷射光傳輸至另一端,最後經由光纖準直器203射出雷射光束2011,接著調整光纖準直器203使雷射光束2011射向反射鏡M,再移動物鏡30,以調整物鏡30與反射鏡M之距離,使得反射鏡M上被雷射光束2011照射之區域能於影像感測元件50清晰成像,此時影像感測元件50將同時輸出影像訊號至一控制電腦(未圖示),接著將影像感 測元件50沿著一軸線(未圖示)移動,使得影像感測元件50測得光譜影像,控制電腦(未圖示)即可同時測得未放置測試樣品之光譜影像訊號IO,最後關閉雷射201電源。值得注意的是,因為光通過光柵後,有些光會偏折向外,造成影像感測元件50可能會接收不到,所以需要移動影像感測元件50以接收這些光。 Please refer to FIG. 2. FIG. 2 is a schematic diagram of the optical path of the embodiment of the grating-type luminous efficiency detection device according to the present invention during testing. First place a reflector M on the object platform 10, turn on the laser 201 power, make the laser 201 emit laser light, the laser light is first coupled into the single-mode fiber 202, the single-mode fiber 202 transmits the laser light to the other end, and finally through The optical fiber collimator 203 emits the laser beam 2011, and then the optical fiber collimator 203 is adjusted to make the laser beam 2011 directed to the mirror M, and then the objective lens 30 is moved to adjust the distance between the objective lens 30 and the reflector M so that the reflector M is on The area irradiated by the laser beam 2011 can be clearly imaged on the image sensor element 50. At this time, the image sensor element 50 will simultaneously output image signals to a control computer (not shown), and then the image sensor element 50 along a line The axis (not shown) moves so that the image sensor 50 measures the spectral image, and the computer (not shown) can be controlled to simultaneously measure the spectral image signal I O of the unplaced test sample, and finally the laser 201 is turned off. It is worth noting that after the light passes through the grating, some of the light will be deflected outwards, which may cause the image sensor 50 not to receive it. Therefore, the image sensor 50 needs to be moved to receive the light.

接著先將反射鏡M移開置物平台10,再將一測試樣品DUT,例如為一微發光二極體(Micro LED)晶片置於置物平台10,打開雷射201電源,使得雷射光束2011照射微發光二極體(Micro LED)晶片,當雷射光束2011照射微發光二極體(Micro LED)晶片時,基於光致發光(Photoluminescence)作用,微發光二極體(Micro LED)晶片將發出可見光VLB,可見光VLB先通過物鏡30,再通過光柵40,最後聚焦成像於影像感測元件50,影像感測元件50再將影像訊號輸出至控制電腦(未圖示),接著將影像感測元件50沿著一軸線(未圖示)移動,使得影像感測元件50測得微發光二極體(Micro LED)晶片所發出可見光VLB之光譜影像,控制電腦(未圖示)即可同時測得微發光二極體(Micro LED)晶片所發出可見光VLB之光譜影像訊號IE,最後關閉雷射201電源。 Then first move the mirror M away from the stage 10, and then place a test sample DUT, such as a micro-light emitting diode (Micro LED) chip on the stage 10, turn on the power of the laser 201, so that the laser beam 2011 is irradiated Micro LED chip, when the laser beam 2011 irradiates the Micro LED chip, based on the photoluminescence function, the Micro LED chip will emit Visible light VLB, visible light VLB first passes through the objective lens 30, and then through the grating 40, and finally focuses the image on the image sensor 50. The image sensor 50 outputs the image signal to the control computer (not shown), and then the image sensor 50 moves along an axis (not shown), so that the image sensor 50 can measure the spectral image of the visible light VLB emitted by the Micro LED chip, which can be measured at the same time by controlling the computer (not shown) The visible light VLB spectral image signal I E emitted by the Micro LED chip, and finally the laser 201 power is turned off.

經由光柵40所測得的光譜影像訊號強度IE,可代表微發光二極體(Micro LED)晶片所發出的可見光強度,由測量到的IE/IO之比值大小,可進一步判斷出微發光二極體(Micro LED)晶片是否明確發光、發光強度及發光波長。 The intensity of the spectral image signal I E measured by the grating 40 can represent the intensity of visible light emitted by a micro-light emitting diode (Micro LED) chip. The measured I E /I O ratio can further determine the micro Whether the light emitting diode (Micro LED) chip has clear light emission, luminous intensity and luminous wavelength.

雖然本創作已以較佳實施例揭露如上,然其並非用以限定本創作,任何於其所屬技術領域中具有通常知識者,在不脫離本創作之精 神和範圍內,仍可作些許的更動與潤飾,因此本創作之保護範圍當視後附之申請專利範圍所界定者為準。 Although this creation has been disclosed in a preferred embodiment as above, it is not intended to limit this creation. Anyone with ordinary knowledge in the technical field to which they belong will not deviate from the essence of this creation. Within the scope of Shenhe, some changes and modifications can still be made. Therefore, the scope of protection of this creation shall be subject to the scope of the attached patent application.

1:光柵式發光效率檢測裝置 1: Grating type luminous efficiency detection device

10:置物平台 10: Storage platform

20:光源 20: light source

201:雷射 201: Laser

202:單模光纖 202: Single-mode fiber

203:光纖準直器 203: Fiber collimator

30:物鏡 30: Objective

40:光柵 40: grating

50:影像感測元件 50: Image sensor

Claims (9)

一種光柵式發光效率檢測裝置,包括: A raster type luminous efficiency detection device, including: 一置物平台; A storage platform; 一光源; A light source; 一物鏡; An objective lens 一光柵;以及 A grating; and 一影像感測元件; An image sensing element; 其中該置物平台用於放置一測試樣品; The storage platform is used to place a test sample; 其中該光源設置於該置物平台之一側; The light source is arranged on one side of the storage platform; 其中該物鏡設置於該置物平台之一側,該物鏡可移動以進行對焦; The objective lens is arranged on one side of the object platform, and the objective lens can be moved for focusing; 其中該光柵設置於該物鏡之一側; The grating is arranged on one side of the objective lens; 其中該影像感測元件設置於該光柵之一側。 The image sensing element is arranged on one side of the grating. 如申請專利範圍第1項所述之光柵式發光效率檢測裝置,其中該物鏡之放大倍率可為5倍、10倍或5至10倍之間。 According to the grating-type luminous efficiency detection device described in item 1 of the scope of patent application, the magnification of the objective lens can be 5 times, 10 times, or between 5 and 10 times. 如申請專利範圍第1項所述之光柵式發光效率檢測裝置,其中該光源為一雷射光源或一LED光源。 According to the grating-type luminous efficiency detection device described in item 1 of the scope of patent application, the light source is a laser light source or an LED light source. 如申請專利範圍第3項所述之光柵式發光效率檢測裝置,其中該雷射光源波長可為375nm、405nm或532nm,該LED光源波長可為375nm、405nm或532nm。 For the grating-type luminous efficiency detection device described in item 3 of the scope of patent application, the wavelength of the laser light source can be 375nm, 405nm or 532nm, and the wavelength of the LED light source can be 375nm, 405nm or 532nm. 如申請專利範圍第1項所述之光柵式發光效率檢測裝置,其更包括一單模光纖以及一光纖準直器,該單模光纖設置於該光源之一側,該光纖準 直器設置於該單模光纖之一側,該光源發出之光束先經過該單模光纖傳輸,再通過該光纖準直器照射至該測試樣品。 The grating-type luminous efficiency detection device described in item 1 of the scope of patent application further includes a single-mode fiber and a fiber collimator. The single-mode fiber is arranged on one side of the light source, and the fiber is collimated. The straightener is arranged on one side of the single-mode optical fiber, and the light beam emitted by the light source is first transmitted through the single-mode optical fiber, and then irradiates the test sample through the optical fiber collimator. 如申請專利範圍第1項所述之光柵式發光效率檢測裝置,其中該光柵為一穿透式光柵或一反射式光柵。 According to the grating-type luminous efficiency detection device described in item 1 of the scope of patent application, the grating is a transmissive grating or a reflective grating. 如申請專利範圍第1項所述之光柵式發光效率檢測裝置,其中該影像感測元件可沿著一軸線移動。 According to the grating-type luminous efficiency detection device described in the first item of the scope of patent application, the image sensing element can move along an axis. 如申請專利範圍第1項所述之光柵式發光效率檢測裝置,其中該影像感測元件為一電荷耦合元件(CCD)或為一互補式金氧半導體(CMOS)影像感測元件。 According to the grating-type luminous efficiency detection device described in the first item of the patent application, the image sensor is a charge coupled device (CCD) or a complementary metal oxide semiconductor (CMOS) image sensor. 如申請專利範圍第1項所述之光柵式發光效率檢測裝置,其中該影像感測元件解析度為1024像素×1024像素或2048像素×2048像素。 According to the grating-type luminous efficiency detection device described in the first item of the scope of patent application, the resolution of the image sensor element is 1024 pixels×1024 pixels or 2048 pixels×2048 pixels.
TW110201471U 2021-02-05 2021-02-05 Grating type luminous efficiency detection device TWM612787U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW110201471U TWM612787U (en) 2021-02-05 2021-02-05 Grating type luminous efficiency detection device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW110201471U TWM612787U (en) 2021-02-05 2021-02-05 Grating type luminous efficiency detection device

Publications (1)

Publication Number Publication Date
TWM612787U true TWM612787U (en) 2021-06-01

Family

ID=77518711

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110201471U TWM612787U (en) 2021-02-05 2021-02-05 Grating type luminous efficiency detection device

Country Status (1)

Country Link
TW (1) TWM612787U (en)

Similar Documents

Publication Publication Date Title
JP5276643B2 (en) A method for optimizing inspection speed without sacrificing signal-to-noise ratio, resolution, or focus quality in low light and fluorescent light applications
JP2975815B2 (en) Apparatus and method for evaluating semiconductor light emitting device
TWI685652B (en) System and method for determining information for defects on wafers
CN108072609A (en) For the lighting unit, micro spectrometer and mobile terminal device of micro spectrometer
CN113008849B (en) Ultraviolet-near infrared broadband micro-region photoluminescence spectrum testing device
KR101533588B1 (en) Apparatus and method for inspecting defect of light emitting diode
TWM578381U (en) Measuring device for array type lighting unit
TWM612787U (en) Grating type luminous efficiency detection device
TWI770809B (en) Rapid luminous efficiency testing method
KR101801032B1 (en) Photoluminescence Intensity Mapping Instrument using Central Wavelength Tracking
KR102602029B1 (en) Micro LED Inspection Device for Performing Photoluminescence Inspection and Automatic Optical Inspection Simultaneously
JP2007263624A (en) Instrument and method for measuring internal quantum efficiency
TWI758088B (en) Array luminous efficiency testing method
US20170254756A1 (en) Method and apparatus for optical measurement of liquid sample
CN115266758B (en) Wafer detection system, wafer detection method, electronic device and storage medium
TWM596869U (en) System for large-area microscopic photoluminescence scanning and side profile measurement
TWI808707B (en) Optical detection system and optical detection method
CN111406208A (en) Determining the specific gravity of a sample
CN110455804A (en) Optical Synthetic test device for appreciation
CN112670201B (en) Detection device
CN110006860A (en) A kind of burnt multichannel fluorescence detecting system of copolymerization
CN204679249U (en) A kind of proving installation of multi-illuminating unit semiconductor laser spatial beam profile
WO2022264521A1 (en) Measuring device
US10823669B2 (en) Inspecting an object that includes a photo-sensitive polyimide layer
TWI714301B (en) Defect of photoresist chip detection system and method thereof