TWM607188U - Electromagnetic wave absorption structure and electronic device - Google Patents
Electromagnetic wave absorption structure and electronic device Download PDFInfo
- Publication number
- TWM607188U TWM607188U TW109212951U TW109212951U TWM607188U TW M607188 U TWM607188 U TW M607188U TW 109212951 U TW109212951 U TW 109212951U TW 109212951 U TW109212951 U TW 109212951U TW M607188 U TWM607188 U TW M607188U
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- electromagnetic wave
- conductive
- composite
- layers
- Prior art date
Links
Images
Landscapes
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
Description
本新型關於一種吸收結構,特別關於一種電磁波吸收結構與具有該電磁波吸收結構的電子裝置。The present invention relates to an absorption structure, in particular to an electromagnetic wave absorption structure and an electronic device with the electromagnetic wave absorption structure.
一般來說,電磁波輻射能量較低,不會使物質發生游離現象,也不會直接破壞環境物質,但是,在到處充滿電子設備、用品、器材的現代生活,電磁干擾卻不可掉以輕心,因為它除了可以干擾電子設備的正常運作外,還可能隨時使人面臨危害的境地。舉例來說,長時間使用手機或電腦之後,可能會讓人感到身體疲勞、眼睛疲倦、肩痛、頭痛、想睡、不安,這些都是受了電磁波的影響。電磁波還會使人的免疫機能下降、或使人體中的鈣質減少,並可能引發流產、視覺障礙、阻礙細胞分裂如癌症、白血病、腦腫瘤、…等。Generally speaking, electromagnetic wave radiation energy is low, it will not cause substances to dissociate, nor will it directly damage environmental substances. However, in the modern life full of electronic equipment, supplies, and equipment, electromagnetic interference cannot be taken lightly, because it is in addition to In addition to interfering with the normal operation of electronic equipment, it may also expose people to harm at any time. For example, after using a mobile phone or computer for a long time, people may feel physical fatigue, eye fatigue, shoulder pain, headache, sleepiness, and restlessness, all of which are affected by electromagnetic waves. Electromagnetic waves can also reduce human immune function, or reduce calcium in the human body, and may cause miscarriage, visual disturbance, and hinder cell division such as cancer, leukemia, brain tumors, etc.
本新型的目的為提供一種電磁波吸收結構與具有該電磁波吸收結構的電子裝置,除了具有良好電磁波吸收效果外,還具有輕、薄的特點,特別適用於薄型化電子產品的電磁波吸收或屏蔽需求。The purpose of the present invention is to provide an electromagnetic wave absorbing structure and an electronic device with the electromagnetic wave absorbing structure. In addition to having a good electromagnetic wave absorbing effect, it also has the characteristics of lightness and thinness, which is especially suitable for the electromagnetic wave absorption or shielding requirements of thin electronic products.
為達上述目的,依據本新型之一種電磁波吸收結構,包括至少一電磁波複合吸收層。其中,電磁波複合吸收層包括一導電複合層及與導電複合層重疊設置的一絕緣層。To achieve the above objective, an electromagnetic wave absorbing structure according to the present invention includes at least one electromagnetic wave composite absorbing layer. Wherein, the electromagnetic wave composite absorption layer includes a conductive composite layer and an insulating layer arranged overlapping the conductive composite layer.
為達上述目的,依據本新型之一種電磁波吸收結構,包括至少二個重疊設置的電磁波複合吸收層。其中,各電磁波複合吸收層包括一導電複合層及與導電複合層重疊設置的一絕緣層。To achieve the above objective, an electromagnetic wave absorbing structure according to the present invention includes at least two electromagnetic wave composite absorbing layers arranged overlappingly. Wherein, each electromagnetic wave composite absorption layer includes a conductive composite layer and an insulating layer overlapped with the conductive composite layer.
在一實施例中,電磁波吸收結構的厚度介於5微米與5000微米之間。In one embodiment, the thickness of the electromagnetic wave absorption structure is between 5 microns and 5000 microns.
在一實施例中,導電複合層的厚度介於1微米與100微米之間。In one embodiment, the thickness of the conductive composite layer is between 1 μm and 100 μm.
在一實施例中,絕緣層的厚度介於0.1微米與200微米之間。In one embodiment, the thickness of the insulating layer is between 0.1 μm and 200 μm.
在一實施例中,導電複合層包括多個導電層與多個層間絕緣層,該些導電層與該些層間絕緣層交錯疊置。In one embodiment, the conductive composite layer includes a plurality of conductive layers and a plurality of interlayer insulating layers, and the conductive layers and the interlayer insulating layers are alternately stacked.
在一實施例中,導電複合層中的該些導電層與該些層間絕緣層的層數不同。In an embodiment, the number of conductive layers and the interlayer insulating layers in the conductive composite layer are different.
在一實施例中,導電層為石墨烯層、石墨層、奈米石墨微片層、碳纖維層、或奈米碳管層。In one embodiment, the conductive layer is a graphene layer, a graphite layer, a graphite nanoplatelet layer, a carbon fiber layer, or a carbon nanotube layer.
在一實施例中,導電層的厚度介於5奈米與200奈米之間。In one embodiment, the thickness of the conductive layer is between 5 nanometers and 200 nanometers.
在一實施例中,層間絕緣層的厚度介於5奈米與10000奈米之間。In one embodiment, the thickness of the interlayer insulating layer is between 5 nanometers and 10,000 nanometers.
在一實施例中,絕緣層或層間絕緣層為高分子樹脂層、樹脂/陶瓷混合層、或樹脂/金屬混合層。In one embodiment, the insulating layer or the interlayer insulating layer is a polymer resin layer, a resin/ceramic hybrid layer, or a resin/metal hybrid layer.
在一實施例中,導電層之單位面積的片電阻介於10歐姆/平方與1000歐姆/平方之間。In one embodiment, the sheet resistance per unit area of the conductive layer is between 10 ohms/square and 1000 ohms/square.
為達上述目的,依據本新型之一種電子裝置,包括上述的電磁波吸收結構。To achieve the above objective, an electronic device according to the present invention includes the above electromagnetic wave absorption structure.
承上所述,在本新型中,透過至少一電磁波複合吸收層,且電磁波複合吸收層包括導電複合層及與導電複合層重疊設置的絕緣層;或者,至少二個重疊設置的電磁波複合吸收層,且各電磁波複合吸收層包括導電複合層及與導電複合層重疊設置的絕緣層的結構設計,可使本新型的電磁波吸收結構及應用該電磁波吸收結構的電子裝置除了具有良好電磁波吸收效果外,還具有輕、薄的特點,特別適用於薄型化電子產品的電磁波吸收或屏蔽需求。As mentioned above, in the present invention, at least one electromagnetic wave composite absorbing layer is transmitted, and the electromagnetic wave composite absorbing layer includes a conductive composite layer and an insulating layer overlapping the conductive composite layer; or, at least two overlapping electromagnetic wave composite absorbing layers And the structure design of each electromagnetic wave composite absorption layer including a conductive composite layer and an insulating layer overlapped with the conductive composite layer can make the electromagnetic wave absorption structure of the present invention and the electronic device using the electromagnetic wave absorption structure have good electromagnetic wave absorption effect. It also has the characteristics of lightness and thinness, which is especially suitable for the electromagnetic wave absorption or shielding requirements of thin electronic products.
以下將參照相關圖式,說明依本新型較佳實施例之電磁波吸收結構與具有該電磁波吸收結構的電子裝置,其中相同的元件將以相同的參照符號加以說明。Hereinafter, the electromagnetic wave absorbing structure and the electronic device having the electromagnetic wave absorbing structure according to the preferred embodiment of the present invention will be described with reference to related drawings, and the same components will be described with the same reference symbols.
圖1為本新型一實施例之一種電磁波吸收結構的示意圖,圖2為圖1顯示之電磁波吸收結構的電磁波複合吸收層的放大示意圖,而圖3和圖4分別為本新型不同實施例之電磁波吸收結構的示意圖。1 is a schematic diagram of an electromagnetic wave absorption structure according to an embodiment of the new type, FIG. 2 is an enlarged schematic diagram of the electromagnetic wave composite absorption layer of the electromagnetic wave absorption structure shown in FIG. 1, and FIGS. 3 and 4 are electromagnetic waves of different embodiments of the new type. Schematic diagram of the absorbent structure.
請先參照圖1所示,電磁波吸收結構1包括至少一電磁波複合吸收層2。本實施例之電磁波吸收結構1是以具有一個電磁波複合吸收層2為例。在不同的實施例中,電磁波複合吸收層2的數量可例如大於一個,例如二個、三個、四個…,且彼此重疊設置。本新型並不特別限定重疊數量,視設計所需的電磁波吸收效果及厚度而定。一般來說,層數越多,吸收效果越好。在一些實施例中,電磁波吸收結構1的厚度可介於5微米(μm)與5000微米之間(包括5微米與5000微米),因此具有輕、薄的特點,特別適用於薄型化電子產品的電磁波吸收或屏蔽需求。Please refer to FIG. 1 first, the electromagnetic
電磁波複合吸收層2可包括一導電複合層21及與導電複合層21重疊設置的一絕緣層22。在一些實施例中,導電複合層21的厚度可介於1微米與100微米之間(包括1微米與100微米),而絕緣層22的厚度可介於0.1微米與200微米之間(0.1微米≤絕緣層的厚度≤200微米),例如0.1微米或30微米。The electromagnetic wave
請參照圖2所示,本實施例的導電複合層21包括多個導電層211與多個層間絕緣層212。本實施例的導電層211的數量為6個,層間絕緣層212的數量為5個,且兩個導電層211之間夾置一個層間絕緣層212,使得該些導電層211與該些層間絕緣層212為交錯疊置(亦即一導電層211、一層間絕緣層212、一導電層211、一層間絕緣層212、一導電層211、…等交錯疊置)。本實施例的導電層211與層間絕緣層212的層數不同,在不同的實施例中,兩者的層數可以相同,但彼此仍交錯疊置。另外,導電複合層21中的同一種膜層,例如該些導電層211(或該些層間絕緣層212)的厚度或材料可以完全相同或部分不同,本新型不限制。Please refer to FIG. 2, the conductive
在一些實施例中,導電層211之單位面積的片電阻可介於10歐姆/平方與1000歐姆/平方(Ohm/sq)之間,其厚度可介於5奈米(nm)與200奈米之間(5奈米≤導電層的厚度≤200奈米),而層間絕緣層212的厚度可介於5奈米與10000奈米之間。In some embodiments, the sheet resistance per unit area of the
前述的導電層211包括導電材料,其可為石墨烯、石墨、奈米石墨微片、碳纖維、或奈米碳管,或其組合,使得導電層211可為石墨烯層、石墨層、奈米石墨微片層、碳纖維層、或奈米碳管層,或是石墨烯、石墨、奈米石墨微片、碳纖維、或奈米碳管等材料組合所製成的膜層。其中,石墨烯、石墨、奈米石墨微片、碳纖維、或奈米碳管具有良好的電磁波吸收能力,可使導電層211具有良好的電磁波吸收效果,進而使得導電複合層21也具有良好的電磁波吸收效果。The aforementioned
另外,絕緣層22或層間絕緣層212可為高分子樹脂層,其材料可例如但不限於為環氧樹脂、壓克力樹脂、聚氨酯樹脂、或蠟、或其組合,或其他高分子樹脂材料。在一些實施例中,絕緣層22或層間絕緣層212也可是樹脂/陶瓷混合層。具體來說,樹脂/陶瓷混合層的材料可包括高分子樹脂與陶瓷粉,亦即將陶瓷粉混合於高分子樹脂中以形成樹脂/陶瓷混合層。陶瓷粉可例如但不限於為氧化鋁(Al
2O
3)陶瓷粉、氧化鐵(Fe
2O
3)陶瓷粉、氮化硼(BN)陶瓷粉、氮化鋁(AlN)陶瓷粉、或氮化矽(Si
3N
4)陶瓷粉、或其組合。在一些實施例中,絕緣層22或層間絕緣層212也可是樹脂/金屬混合層。具體來說,可將金屬粉或經過絕緣處理的金屬粉(即金屬粉外包覆絕緣層)混合於高分子樹脂中,以形成樹脂/金屬混合層。其中,金屬粉的材料例如但不限於為金、鋁、銅、鎳、鈀、鉑、鋅、銀、鐵矽合金、鐵矽鋁合金、或鐵矽鉻合金等合金材料,或其組合。藉由在高分子樹脂中加入陶瓷粉、金屬粉或經過絕緣處理的金屬粉,可使絕緣層22或層間絕緣層212也具有電磁波吸收效果。
In addition, the
另外,請參照圖3所示,本實施例的電磁波吸收結構1a與前述實施例的電磁波吸收結構1其元件組成及各元件的連接關係大致相同。不同的地方在於,本實施例的電磁波吸收結構1a包括至少二個重疊設置的電磁波複合吸收層2。本實施例之電磁波吸收結構1a是以具有兩個電磁波複合吸收層2彼此重疊設置為例。在不同的實施例中,電磁波複合吸收層2的重疊數量可大於兩個,但小於等於十個。舉例來說,電磁波吸收結構也可以是三個,或三個以上的電磁波複合吸收層2重疊設置,本新型並不特別限定重疊數量,視設計所需的電磁波吸收效果而定。In addition, referring to FIG. 3, the electromagnetic wave absorbing structure 1a of this embodiment and the electromagnetic
各電磁波複合吸收層2可包括一導電複合層21及與導電複合層21重疊設置的一絕緣層22。其中,兩個電磁波複合吸收層2中的同一種層的厚度或材料可以相同,也可不相同。例如,圖3中的兩個電磁波複合吸收層2中的兩個導電複合層21的名稱雖然相同,但兩者的材料可以相同、也可以不同,兩者的厚度可以相同、也可以不同。同樣地,兩個電磁波複合吸收層2中的兩個絕緣層22雖然都是絕緣層,但兩者的材料可以相同、也可以不同,兩者的厚度可以相同、也可以不同,本新型皆不限制,視實際設計而定。Each electromagnetic wave
請參照圖4所示,本實施例的電磁波吸收結構1b與前述實施例的電磁波吸收結構其元件組成及各元件的連接關係大致相同。不同的地方在於,本實施例的電磁波吸收結構1b是以具有四個電磁波複合吸收層2重疊設置為例。Referring to FIG. 4, the electromagnetic wave absorbing structure 1b of this embodiment and the electromagnetic wave absorbing structure of the previous embodiment have substantially the same component composition and connection relationship of the components. The difference lies in that the electromagnetic wave absorbing structure 1b of this embodiment is an example of having four electromagnetic wave
此外,電磁波吸收結構1a、1b中的電磁波複合吸收層2的導電複合層21與絕緣層22,以及導電複合層21的導電層211與層間絕緣層212的技術內容已於上述中詳述,在此不再贅述。In addition, the technical content of the conductive
以下再介紹本新型不同實施例的電磁波吸收結構。The electromagnetic wave absorbing structure of different embodiments of the present invention will be introduced below.
實施例一:導電層211的材料可包括石墨烯(即導電層211為石墨烯層),其厚度可為100nm,層間絕緣層212的厚度可為500nm,其材料可包括壓克力樹脂(層間絕緣層212為壓克力樹脂層),利用50層的導電層211與50層的層間絕緣層212交錯堆疊後可成為厚度為30μm的導電複合層21。另外,絕緣層22的厚度可為10μm,其材料可包括壓克力樹脂(即絕緣層22為壓克力樹脂層),再將30μm厚的導電複合層21與10μm厚的絕緣層22疊置以組成一個電磁波複合吸收層2,並且將三個電磁波複合吸收層2重疊設置,可得到總厚度為120μm的電磁波吸收結構。Embodiment 1: The material of the
實施例二:導電層211的材料可包括石墨烯(石墨烯層),其厚度可為10nm,層間絕緣層212的厚度可為50nm,其材料可包括90%的環氧樹脂混合10%的氮化硼(樹脂/陶瓷混合層),將100層的導電層211與100層的間絕緣層212交錯堆疊後可成為厚度為6μm的導電複合層21。另外,絕緣層22的厚度可為50μm,其材料可包括70%的環氧樹脂混合30%的氧化鐵(樹脂/陶瓷混合層),再將6μm厚的導電複合層21與50μm厚的絕緣層22疊置以組成一個電磁波複合吸收層2,並且將五個電磁波複合吸收層2重疊設置,可得到總厚度為280μm的電磁波吸收結構。Embodiment 2: The material of the
此外,本新型還提出一種電子裝置,其可包括前述的電磁波吸收結構1、1a、或1b、或其變化態樣。其中,電磁波吸收結構1、1a、或1b、或其變化態樣的具體技術內容可參照上述,在此不再多作說明。In addition, the present invention also provides an electronic device, which may include the aforementioned electromagnetic
電磁波吸收結構可用以吸收電子裝置的元件所發出的電磁波,避免過高的電磁波雜訊干擾其他裝置;或者,電磁波吸收結構可吸收外部入射至電子裝置的電磁波,避免影響電子裝置的正常功能;又或者,降低外部發射的電磁波強度,使電子裝置通過外部發射電磁波的安全規格檢驗。上述的電子裝置可為手機、平板、筆記型電腦、或穿戴式等行動電子裝置或是固定式裝置,或是前述行動電子裝置或是固定式裝置的內部元件、單元、或模組,並不限定。The electromagnetic wave absorbing structure can be used to absorb the electromagnetic waves emitted by the components of the electronic device to prevent excessive electromagnetic noise from interfering with other devices; or the electromagnetic wave absorbing structure can absorb the electromagnetic waves incident on the electronic device from the outside to avoid affecting the normal function of the electronic device; and Or, reduce the intensity of the electromagnetic wave emitted from the outside so that the electronic device can pass the safety standard test for the electromagnetic wave emitted from the outside. The above-mentioned electronic device can be a mobile electronic device such as a mobile phone, a tablet, a notebook computer, or a wearable or a fixed device, or an internal component, unit, or module of the aforementioned mobile electronic device or a fixed device. limited.
綜上所述,在本新型中,透過至少一電磁波複合吸收層,且電磁波複合吸收層包括導電複合層及與導電複合層重疊設置的絕緣層;或者,至少二個重疊設置的電磁波複合吸收層,且各電磁波複合吸收層包括導電複合層及與導電複合層重疊設置的絕緣層的結構設計,可使本新型的電磁波吸收結構及應用該電磁波吸收結構的電子裝置除了具有良好電磁波吸收效果外,還具有輕、薄的特點,特別適用於薄型化電子產品的電磁波吸收或屏蔽需求。To sum up, in the present invention, at least one electromagnetic wave composite absorbing layer is passed through, and the electromagnetic wave composite absorbing layer includes a conductive composite layer and an insulating layer overlapping the conductive composite layer; or, at least two overlapping electromagnetic wave composite absorbing layers And the structure design of each electromagnetic wave composite absorption layer including a conductive composite layer and an insulating layer overlapped with the conductive composite layer can make the electromagnetic wave absorption structure of the present invention and the electronic device using the electromagnetic wave absorption structure have good electromagnetic wave absorption effect. It also has the characteristics of lightness and thinness, which is especially suitable for the electromagnetic wave absorption or shielding requirements of thin electronic products.
以上所述僅為舉例性,而非為限制性者。任何未脫離本新型之精神與範疇,而對其進行之等效修改或變更,均應包含於後附之申請專利範圍中。The above description is only illustrative, and not restrictive. Any equivalent modifications or changes that do not depart from the spirit and scope of this new model shall be included in the scope of the attached patent application.
1,1a,1b:電磁波吸收結構 2:電磁波複合吸收層 21:導電複合層 211:導電層 212:層間絕緣層 22:絕緣層 1,1a,1b: electromagnetic wave absorption structure 2: Electromagnetic wave composite absorption layer 21: Conductive composite layer 211: conductive layer 212: Interlayer insulation layer 22: Insulation layer
圖1為本新型一實施例之一種電磁波吸收結構的示意圖。 圖2為圖1顯示之電磁波吸收結構的電磁波複合吸收層的放大示意圖。 圖3和圖4分別為本新型不同實施例之電磁波吸收結構的示意圖。 Fig. 1 is a schematic diagram of an electromagnetic wave absorbing structure according to an embodiment of the new type. FIG. 2 is an enlarged schematic diagram of the electromagnetic wave composite absorption layer of the electromagnetic wave absorption structure shown in FIG. 1. 3 and 4 are schematic diagrams of electromagnetic wave absorbing structures in different embodiments of the new type.
1:電磁波吸收結構 1: Electromagnetic wave absorption structure
2:電磁波複合吸收層 2: Electromagnetic wave composite absorption layer
21:導電複合層 21: Conductive composite layer
22:絕緣層 22: Insulation layer
Claims (13)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW109212951U TWM607188U (en) | 2020-09-30 | 2020-09-30 | Electromagnetic wave absorption structure and electronic device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW109212951U TWM607188U (en) | 2020-09-30 | 2020-09-30 | Electromagnetic wave absorption structure and electronic device |
Publications (1)
Publication Number | Publication Date |
---|---|
TWM607188U true TWM607188U (en) | 2021-02-01 |
Family
ID=75782736
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW109212951U TWM607188U (en) | 2020-09-30 | 2020-09-30 | Electromagnetic wave absorption structure and electronic device |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWM607188U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI745108B (en) * | 2020-09-30 | 2021-11-01 | 吳豐宇 | Electromagnetic wave absorption structure and electronic device |
-
2020
- 2020-09-30 TW TW109212951U patent/TWM607188U/en unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI745108B (en) * | 2020-09-30 | 2021-11-01 | 吳豐宇 | Electromagnetic wave absorption structure and electronic device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Li et al. | Reversible crumpling of 2D titanium carbide (MXene) nanocoatings for stretchable electromagnetic shielding and wearable wireless communication | |
Li et al. | Ti3C2Tx/PANI/liquid metal composite microspheres with 3D nanoflower structure: Preparation, characterization, and applications in EMI shielding | |
CN107592783A (en) | A kind of electromagnetic shielding film and preparation method thereof | |
US20240130097A1 (en) | Electromagnetic wave absorption structure | |
TW201512346A (en) | Electromagnetic wave shielding film and electronic component mounting substrate | |
TWI330400B (en) | ||
JP3969618B2 (en) | Electromagnetic wave absorbing heat conductive silicone gel molded sheet and method for producing the same | |
TWM607188U (en) | Electromagnetic wave absorption structure and electronic device | |
WO2020244184A1 (en) | Ultrasonic probe | |
JP7005851B2 (en) | Multilayer anisotropic conductive film | |
KR20150142927A (en) | Thermal diffusion sheet having a flexible layer of ceramic-carbon composite | |
JP2013080916A (en) | Sheet and manufacturing method of the same | |
Kang et al. | Full integration of highly stretchable inorganic transistors and circuits within molecular-tailored elastic substrates on a large scale | |
KR101992570B1 (en) | Method of manufacturing material to shield electromagnetic wave by using carbon nano tube sheet | |
JP5720358B2 (en) | Radio wave suppression sheet, electronic device including the sheet, and radio wave suppression component | |
Sun et al. | Multilayer Three‐Dimensional Woven Silver Nanowire Networks for Absorption‐Dominated Electromagnetic Interference Shielding | |
TW200929459A (en) | Semiconductor package | |
TWM553100U (en) | Electromagnetic shielding film | |
JPH1126977A (en) | Sheet for absorbing electromagnetic wave | |
Gao et al. | A method for simultaneously preparing crack-based and composite-based PDMS strain sensors by mixing AgNWs and Ag microparticles | |
US20170238447A1 (en) | Electromagnetic wave shielding tape using nanomaterials | |
TWM395240U (en) | Flexible flat cable | |
TWI729965B (en) | Composite laminate plate, housing and mobile communication device | |
KR20160013602A (en) | Hybrid sheet for digitizer, method of manufacturing the same and apparatus having the same | |
JP2022074642A (en) | Optical sensor and manufacturing method thereof |