TWM599023U - Wafer cutting system having two adjustable fluids unit - Google Patents

Wafer cutting system having two adjustable fluids unit Download PDF

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TWM599023U
TWM599023U TW109204730U TW109204730U TWM599023U TW M599023 U TWM599023 U TW M599023U TW 109204730 U TW109204730 U TW 109204730U TW 109204730 U TW109204730 U TW 109204730U TW M599023 U TWM599023 U TW M599023U
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pipe
cutting
pressure
fluid
gas
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周海林
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大陸商京隆科技(蘇州)有限公司
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Abstract

一種具可調變二流體的晶圓切割系統:包括切割機體、水阻值產生裝置、二流體產生裝置、壓縮空氣供給單元,水阻值產生裝置設有供液管輸出調整電阻值後的切割液,壓縮空氣供給單元設有供氣管輸出高壓氣體,二流體產生裝置包括多個壓力控制單元,每個壓力控制單元連接著作為輸入端之第一支管及第二支管,以及作為每個壓力輸出控制單元輸出端之噴液管,多個第一支管並聯於供液管,多個第二支管並聯於供氣管,噴液管連接於切割機體的噴頭,輸入的切割液及高壓氣體經壓力控制單元調變後輸出氣液混合之二流體且經噴液管輸送至噴頭噴出。A wafer cutting system with adjustable two fluids: including a cutting machine body, a water resistance generating device, a two fluid generating device, and a compressed air supply unit. The water resistance generating device is equipped with a liquid supply tube to output the adjusted resistance value for cutting The compressed air supply unit is equipped with a gas supply pipe to output high-pressure gas. The two-fluid generating device includes a plurality of pressure control units. Each pressure control unit is connected to the first branch pipe and the second branch pipe as the input end, and serves as each pressure output For the liquid spray pipe at the output end of the control unit, multiple first branch pipes are connected in parallel to the liquid supply pipe, multiple second branch pipes are connected in parallel to the air supply pipe, and the spray pipe is connected to the nozzle of the cutting machine body. The input cutting fluid and high-pressure gas are controlled by pressure After the unit is modulated, it outputs the two fluids of gas-liquid mixture and transports them to the spray head to be sprayed through the spray pipe.

Description

具可調變二流體的晶圓切割系統Wafer cutting system with adjustable two fluids

本創作為一種晶圓切割系統的技術領域,尤其指一種控制切割液為二流體狀態的系統。This creation is the technical field of a wafer cutting system, especially a system for controlling the cutting fluid into a two-fluid state.

隨著半導體工藝的發展,晶片的集成度越來越高,而對應的晶片尺寸越來越小。在半導體製程中,需要將晶圓切割成一個個晶片,然後將這些晶片進行相對應的半導體封裝作業。在刀具旋轉切割過程中,會噴灑高壓切割液於刀具及切割處,利用切割液去除切割過程中產生的碎材及微粒。但隨著晶片尺寸及切割間隙的縮小,單純高壓水注形成的切割液已無法滿足產品潔淨度的品質要求,例如,CMOS影像感測器的晶圓產品,在切割時其CMOS影像感測器的玻璃表面,易沾附碎材及微粒,因此如何使切割液的液體微粒化,甚至呈水霧狀態,更有助於提昇清洗效果。另外針對切割液的電阻值如能加以調變,也能透過切割液避免晶圓上的晶片遭到靜電放電的破壞。With the development of semiconductor technology, the integration of wafers is getting higher and higher, and the corresponding wafer size is getting smaller and smaller. In the semiconductor manufacturing process, the wafers need to be cut into individual wafers, and then these wafers are subjected to corresponding semiconductor packaging operations. During the cutting process of the knife, high-pressure cutting fluid is sprayed on the knife and the cutting part, and the cutting fluid is used to remove the debris and particles generated during the cutting process. However, as the size of the chip and the cutting gap shrink, the cutting fluid formed by high-pressure water injection can no longer meet the quality requirements of product cleanliness. For example, the wafer products of CMOS image sensor, the CMOS image sensor during cutting The glass surface is easy to adhere to debris and particles, so how to make the liquid of the cutting fluid into particles, even in a water mist state, is more helpful to improve the cleaning effect. In addition, if the resistance value of the cutting fluid can be adjusted, the chip on the wafer can also be prevented from being damaged by electrostatic discharge through the cutting fluid.

為解決上述之問題,本創作之主要目的是具可調變二流體的晶圓切割系統,能實現調節切割液輸出為氣液二流體狀態,並控制壓力值、電阻值及強度等,使噴灑於晶圓表面的噴霧均勻度、強度及性質皆獲得較佳控制,以提升切割時的清洗效果,提升晶圓切割的品質及良率。In order to solve the above problems, the main purpose of this creation is to have a variable two-fluid wafer cutting system, which can adjust the output of the cutting fluid to the gas-liquid two-fluid state, and control the pressure value, resistance value and intensity, etc., so that the spray The uniformity, strength and properties of the spray on the wafer surface are better controlled to improve the cleaning effect during cutting and improve the quality and yield of wafer cutting.

為達上述之目的,本創作為具可調變二流體的晶圓切割系統:包括切割機體、水阻值產生裝置、二流體產生裝置、壓縮空氣供給單元,水阻值產生裝置設有供液管輸出調整電阻值後的切割液,壓縮空氣供給單元設有供氣管輸出高壓氣體,二流體產生裝置包括多個壓力控制單元,每個壓力控制單元連接著作為輸入端之第一支管及第二支管,以及作為每個壓力控制單元輸出端之噴液管,多個第一支管並聯於供液管,多個第二支管並聯於供氣管,噴液管連接於切割機體的噴頭,輸入的切割液及高壓氣體經壓力控制單元調變後輸出氣液二流體且經噴液管輸送至噴頭噴出。In order to achieve the above purpose, this creation is a wafer cutting system with adjustable two fluids: including a cutting body, a water resistance generating device, a two fluid generating device, a compressed air supply unit, and the water resistance generating device is equipped with a liquid supply. The compressed air supply unit is equipped with an air supply pipe to output high-pressure gas. The two fluid generating device includes a plurality of pressure control units. Each pressure control unit is connected to the first branch pipe and the second pipe which are input ends. The branch pipe and the liquid spray pipe as the output end of each pressure control unit. Multiple first branch pipes are connected in parallel to the liquid supply pipe, multiple second branch pipes are connected in parallel to the air supply pipe, and the liquid spray pipe is connected to the nozzle of the cutting machine body. The liquid and high-pressure gas are adjusted by the pressure control unit and output the gas-liquid two-fluid and are transported to the spray nozzle through the spray pipe.

作為較佳優選實施方案之一,第二支管上安裝著壓力表,監控輸出的氣體壓力。As one of the preferred embodiments, a pressure gauge is installed on the second branch pipe to monitor the output gas pressure.

件為較佳優選實施方案之一,切割機體的切割刀具設有至少二噴頭,每個壓力控制單元是個別控制相對應噴頭輸出的二流體壓力值。The device is one of the preferred embodiments. The cutting tool of the cutting machine body is provided with at least two nozzles, and each pressure control unit individually controls the two fluid pressure values output by the corresponding nozzle.

作為較佳優選實施方案之一,噴液管上安裝著電磁開關。As one of the preferred embodiments, an electromagnetic switch is installed on the spray pipe.

作為較佳優選實施方案之一,供液管所連接的每個第一支管與供氣管所連接的每個第二支管上皆設有一流量控制閥。As one of the preferred embodiments, each first branch pipe connected to the liquid supply pipe and each second branch pipe connected to the air supply pipe are provided with a flow control valve.

與現有技術相比,本實用新型有益效果包括: 1.       二流體產生裝置連接的水阻值產生裝置及壓縮空氣供給單元, 能調節輸出之氣液二流體的切割液,以實現調節噴灑於晶圓表面的噴霧均勻度及強度,達到最佳清效果,提升切割品質及良率。 2.       可個別控制相對應噴頭輸出的氣液二流體壓力值,針對不同切割位置的提供不同且適當均勻度強度的噴霧,以提升產品的潔淨度,進一步提升切割品質。 Compared with the prior art, the beneficial effects of the present invention include: 1. The water resistance value generating device and compressed air supply unit connected to the two-fluid generating device can adjust the output of the gas-liquid two-fluid cutting fluid to adjust the uniformity and intensity of the spray sprayed on the wafer surface to achieve the best cleaning. Effect, improve cutting quality and yield. 2. The pressure values of the gas and liquid two fluids output by the corresponding nozzles can be individually controlled, and sprays with different and appropriate uniformity strengths are provided for different cutting positions to improve the cleanliness of the product and further improve the cutting quality.

下面將結合具體實施例和附圖,對本創作的技術方案進行清楚、完整地描述。需要說明的是,當元件被稱為「固定於」另一個元件,意指它可以直接在另一個元件上或者也可以存在居中的元件。當一個元件被認為是「連接」另一個元件,意指它可以是直接連接到另一個元件或者可能同時存在居中元件。在所示出的實施例中,方向表示上、下、左、右、前和後等是相對的,用於解釋本案中不同部件的結構和運動是相對的。當部件處於圖中所示的位置時,這些表示是恰當的。但是,如果元件位置的說明發生變化,那麼認為這些表示也將相應地發生變化。The technical solution of this creation will be clearly and completely described below in conjunction with specific embodiments and drawings. It should be noted that when a component is referred to as being "fixed to" another component, it means that it can be directly on the other component or there may also be a centered component. When an element is considered to be "connected" to another element, it means that it can be directly connected to the other element or there may be a central element at the same time. In the illustrated embodiment, the directions indicate that up, down, left, right, front and back, etc. are relative, and are used to explain that the structure and movement of different components in this case are relative. These representations are appropriate when the parts are in the positions shown in the figure. However, if the description of the component location changes, it is considered that these representations will also change accordingly.

除非另有定義,本文所使用的所有技術和科學術語與屬於本創作技術領域的技術人員通常理解的含義相同。本文中所使用的術語只是為了描述具體實施例的目的,不是旨在限制本創作。本文所使用的術語「和/或」包括一個或多個相關的所列項目的任意的和所有的組合。Unless otherwise defined, all technical and scientific terms used herein have the same meanings as commonly understood by those skilled in the art of creation. The terminology used herein is only for the purpose of describing specific embodiments, and is not intended to limit the creation. The term "and/or" as used herein includes any and all combinations of one or more related listed items.

如圖1所示,為本創作的系統架構圖,本創作具可調變二流體的晶圓切割系統包括切割機體1、水阻值產生裝置2、二流體產生裝置3、壓縮空氣供給單元4。As shown in Figure 1, the system architecture diagram of this creation. The wafer cutting system with adjustable two fluids in this creation includes a cutting body 1, a water resistance generating device 2, a two fluid generating device 3, and a compressed air supply unit 4. .

切割機體1為一種晶圓切割機,圖中僅表示機器中負責切割作業之刀具11所在處的示意圖,刀具11受其他機構帶動旋轉以將晶圓切割為微小的晶片。刀具11所在處另設有支架12安裝著噴頭13,噴頭13噴出方向對應於刀具11,以利在切割過程,適時由噴頭13噴出混合著空氣與水之氣液二流體的切割液,去除切割處表面的碎材及細微顆粒。The cutting machine body 1 is a wafer cutting machine. The figure only shows a schematic diagram of the cutting tool 11 in the machine. The cutting tool 11 is driven by other mechanisms to rotate to cut the wafer into tiny wafers. There is also a bracket 12 where the cutter 11 is installed with a nozzle 13, and the spray direction of the nozzle 13 corresponds to the cutter 11, so that during the cutting process, the nozzle 13 sprays the cutting fluid mixed with air and water in a timely manner to remove cutting Scattered materials and fine particles on the surface.

水阻值產生裝置2是用以調整輸出之切割液的電阻值,一般切割液主要組成物為去離子水。由於去離子水中有很高的電阻,切割時容易在產品表面產生靜電,為了避免切割過程中產生帶電現象,可採用於切割液中加入二氧化碳的方式,調節切割液的電阻值,防止晶圓遭到靜電放電的破壞。本實施例中水阻值產生裝置2是由供液管21輸出調整電阻值後的切割液至二流體產生裝置3。The water resistance value generator 2 is used to adjust the resistance value of the output cutting fluid. Generally, the main component of the cutting fluid is deionized water. Due to the high electrical resistance in deionized water, it is easy to generate static electricity on the surface of the product during cutting. In order to avoid charging during the cutting process, carbon dioxide can be added to the cutting fluid to adjust the resistance of the cutting fluid to prevent wafer damage. To the destruction of electrostatic discharge. In this embodiment, the water resistance value generating device 2 outputs the cutting fluid with the adjusted resistance value from the liquid supply pipe 21 to the two fluid generating device 3.

壓縮空氣供給單元4是負責提供高壓氣體至二流產生裝置3,可為空氣壓縮機,或是已儲存高壓氣體的氣瓶。壓縮空氣供給單元4設有一供氣管41輸出設定壓的氣體。The compressed air supply unit 4 is responsible for supplying high-pressure gas to the second-stream generating device 3, and can be an air compressor or a gas cylinder that has stored high-pressure gas. The compressed air supply unit 4 is provided with an air supply pipe 41 for outputting gas at a set pressure.

二流體產生裝置3包括多個壓力控制單元31,每個壓力控制單元31連接著作為輸入端之第一支管311及至第二支管312,以及作為輸出端之噴液管313。第一支管311連接著供液管21,接收調整電阻值後的切割液。第二支管312連接著供氣管41,提供高壓氣體至壓力控制單元31。噴液管313連接於噴頭13。壓力控制單元31控制供液管21的水壓,配合由供氣管42輸入的氣體形成混合空氣與水之氣液二流體的切割液,之後由噴液管32輸送至噴頭13處,噴灑於晶圓表面的切割位置,如此能有效控制噴霧均勻度及強度,達到最佳的清洗效果,提升晶圓切割的品質及良率。在本實施例中每個第二支管312另安裝著壓力表314,由壓力表42監控輸出的氣體壓力。The two fluid generating device 3 includes a plurality of pressure control units 31, and each pressure control unit 31 is connected to a first branch pipe 311 and a second branch pipe 312 as an input end, and a liquid spray pipe 313 as an output end. The first branch pipe 311 is connected to the liquid supply pipe 21, and receives the cutting fluid after adjusting the resistance value. The second branch pipe 312 is connected to the gas supply pipe 41 to provide high-pressure gas to the pressure control unit 31. The spray pipe 313 is connected to the spray head 13. The pressure control unit 31 controls the water pressure of the liquid supply pipe 21, and cooperates with the gas input from the air supply pipe 42 to form a cutting fluid that mixes air and water, and then is delivered to the nozzle 13 by the liquid spray pipe 32 and sprayed on the crystal. The cutting position of the round surface can effectively control the spray uniformity and intensity, achieve the best cleaning effect, and improve the quality and yield of wafer cutting. In this embodiment, each second branch pipe 312 is additionally equipped with a pressure gauge 314, and the pressure gauge 42 monitors the output gas pressure.

如圖2所示,為本創作第二種實施例圖。在本實施例中,每個切割機體1的刀具11位置,設有至少兩個噴嘴13,相對地二流體產生裝置3內部也設有相同數目的壓力控制單元31及噴液管313與噴嘴13連接,在本實施例中每個噴液管313另安裝著電磁開關315,由電磁開關315控制管路的開或閉。其中不同的壓力控制單元31可控制噴嘴13輸出不同壓力值的二流體切割液,針對不同切割位置的提供不同且適當均勻度強度的噴霧,亦可調整二流體切割液之液氣混合比,進一步提升切割品質。其中不同位置的電磁開關315則能在噴頭13停止噴出時同步關閉,避免後續切割過程中部份污水進入噴嘴13回流污染管路。As shown in Figure 2, this is the second embodiment of the creation. In this embodiment, at least two nozzles 13 are provided at the position of the cutter 11 of each cutting machine body 1, and the same number of pressure control units 31, spray pipes 313, and nozzles 13 are also provided inside the two fluid generating devices 3. In this embodiment, an electromagnetic switch 315 is installed in each spray pipe 313, and the electromagnetic switch 315 controls the opening or closing of the pipeline. The different pressure control units 31 can control the nozzle 13 to output two-fluid cutting fluid with different pressure values, provide different and appropriate uniformity sprays for different cutting positions, and can also adjust the liquid-gas mixing ratio of the two-fluid cutting fluid. Improve cutting quality. The electromagnetic switches 315 in different positions can be turned off synchronously when the nozzle 13 stops spraying, so as to prevent some sewage from entering the nozzle 13 and contaminating the pipeline during the subsequent cutting process.

如圖3所示,為本創作第三種實施例圖。在本實施例與第二種實施例在於,供液管21所連接的每個第一支管311與供氣管41所連接的每個第二支管312設有流量控制閥316,可分別調整第一支管311與第二支管312的液氣流量。經流量控制閥316調節流量完成的第一支管311與第二支管312,分別流入壓力控制單元31,用以混合特定液氣比例的二流體的切割液。壓力控制單元31亦可調節流入噴液管313內二流體的切割液壓力,藉此特定液氣混合比與特定壓力的二流體切割液,經壓力控制單元31調節壓力後,由噴嘴13噴灑於晶圓表面,以提高去除晶圓表面之碎材及微粒的能力。As shown in Figure 3, this is the third embodiment of the creation. In this embodiment and the second embodiment, each first branch pipe 311 connected to the liquid supply pipe 21 and each second branch pipe 312 connected to the air supply pipe 41 are provided with a flow control valve 316, which can be adjusted separately. The liquid and gas flow of the branch pipe 311 and the second branch pipe 312. The first branch pipe 311 and the second branch pipe 312 whose flow is adjusted by the flow control valve 316 respectively flow into the pressure control unit 31 for mixing the cutting fluid of two fluids with a specific liquid-gas ratio. The pressure control unit 31 can also adjust the cutting fluid pressure of the two fluids flowing into the spray pipe 313, so that the specific liquid-gas mixture ratio and the specific pressure of the two fluid cutting fluid are adjusted by the pressure control unit 31 and sprayed on by the nozzle 13 Wafer surface to improve the ability to remove debris and particles on the wafer surface.

接著如圖4A~圖4D所示,為圖2中具有多個噴嘴13於配合刀具11進行晶圓5切割作業的示意圖。如圖4A、圖4B及圖4C所示,由二流體產生裝置3設有多個壓力控制單元31,能個別控制不同位置的噴嘴13噴出適當強度的二流體切割液,避免相鄰的嘴噴13同時噴出使水霧叉干擾,影響水霧清洗效果。當然此時多個壓力控制單元31也能提供不同的輸出壓力值,使得清洗效果提升。又如圖4D所示,雖然多個嘴噴13同時噴出水霧,但由於強度已作調整,能減少交叉干擾情形,水霧量加大讓清洗效果更好。Next, as shown in FIGS. 4A to 4D, it is a schematic diagram of the wafer 5 cutting operation with a plurality of nozzles 13 in cooperation with the cutter 11 in FIG. 2. As shown in Figures 4A, 4B and 4C, the two-fluid generator 3 is provided with a plurality of pressure control units 31, which can individually control the nozzles 13 at different positions to spray the two-fluid cutting fluid with appropriate strength to prevent adjacent nozzles from spraying 13 Simultaneous spraying makes the water mist fork interfere and affect the water mist cleaning effect. Of course, at this time, multiple pressure control units 31 can also provide different output pressure values, so that the cleaning effect is improved. As shown in FIG. 4D, although multiple nozzles 13 spray water mist at the same time, the intensity has been adjusted to reduce cross-interference, and the increase in the amount of water mist makes the cleaning effect better.

綜合以上所述,本創作具可調變二流體的晶圓切割系統是利用二流體產生裝置的壓力控制單元可實現調節二流體的水氣比例,以達最佳的清洗效果。加上本創作又能針對不同位置的噴嘴個別調整控制壓力值或直接關閉,讓不同切割位置獲得所需強度的水霧,提升潔淨度也提升切割品質。Based on the above, the wafer cutting system with adjustable two fluids in this invention uses the pressure control unit of the two fluid generating device to adjust the water-air ratio of the two fluids to achieve the best cleaning effect. In addition, this creation can individually adjust the control pressure value or directly close the nozzles at different positions, so that different cutting positions can obtain the required strength of water mist, improve cleanliness and improve cutting quality.

然而,上述實施例僅例示性說明本創作的功效,而非用於限制本創作,任何熟習此技術領域的人士均可在不違背本創作的精神及範疇下,對上述實施例進行修飾與改變。此外,在上述實施例中的元件的數量僅為例示性說明,也非用於限制本創作。因此本創作的權利保護範圍,應如以下的申請專利範圍所列。However, the above-mentioned embodiments are only illustrative of the effects of this creation, not for limiting this creation. Anyone familiar with this technical field can modify and change the above-mentioned embodiments without departing from the spirit and scope of this creation. . In addition, the number of elements in the above-mentioned embodiments is merely illustrative, and is not used to limit the creation. Therefore, the scope of protection of the rights of this creation should be listed in the following patent scope.

1:切割機體 11:刀具 12:支架 13:噴嘴 2:水阻值產生裝置 21:供液管 3:二流體產生裝置 31:壓力控制單元 311:第一支管 312:第二支管 313:噴液管 314:壓力表 315:電磁開關 316:流量控制閥 4:壓縮空氣供給單元 41:供氣管 5:晶圓 1: Cutting body 11: Tool 12: Bracket 13: Nozzle 2: Water resistance value generating device 21: Liquid supply pipe 3: Two fluid generating device 31: Pressure control unit 311: The first pipe 312: second pipe 313: Spray pipe 314: Pressure gauge 315: Electromagnetic switch 316: Flow control valve 4: Compressed air supply unit 41: air supply pipe 5: Wafer

圖1為本創作第一實施例的系統架構圖。Figure 1 is a system architecture diagram of the first embodiment of the creation.

圖2為本創作第二實施例的系統架構圖。Figure 2 is a system architecture diagram of the second embodiment of the authoring.

圖3為本創作第三實施例的系統架構圖。Figure 3 is a system architecture diagram of the third embodiment of the authoring.

圖4A本創作進行晶圓切割時的運作示意圖。Figure 4A is a schematic diagram of the operation of this creation during wafer cutting.

圖4B本創作進行晶圓切割時的運作示意圖。Figure 4B is a schematic diagram of the operation of this creation during wafer cutting.

圖4C本創作進行晶圓切割時的運作示意圖。Figure 4C is a schematic diagram of the operation of this creation during wafer cutting.

圖4D本創作進行晶圓切割時的運作示意圖。Figure 4D is a schematic diagram of the operation of this creation during wafer cutting.

1:切割機體 1: Cutting body

11:刀具 11: Tool

12:支架 12: Bracket

13:噴嘴 13: Nozzle

2:水阻值產生裝置 2: Water resistance value generating device

21:供液管 21: Liquid supply pipe

3:二流體產生裝置 3: Two fluid generating device

31:壓力控制單元 31: Pressure control unit

311:第一支管 311: The first pipe

312:第二支管 312: second pipe

313:噴液管 313: Spray pipe

314:壓力表 314: Pressure gauge

4:壓縮空氣供給單元 4: Compressed air supply unit

41:供氣管 41: air supply pipe

Claims (5)

一種具可調變二流體的晶圓切割系統:包括切割機體、水阻值產生裝置、二流體產生裝置、壓縮空氣供給單元,該水阻值產生裝置設有供液管輸出調整電阻值後的切割液,該壓縮空氣供給單元設有供氣管輸出高壓氣體,該二流體產生裝置包括多個壓力控制單元,每個該壓力控制單元連接著作為輸入端之第一支管及第二支管,以及作為每個該壓力控制單元輸出端之噴液管,多個該第一支管並聯於該供液管,多個該第二支管並聯於該供氣管,該噴液管連接於該切割機體的噴頭,輸入的切割液及高壓氣體經該壓力控制單元調變後,輸出氣液二流體且經該噴液管輸送至該噴頭噴出。A wafer cutting system with adjustable two fluids: including a cutting machine body, a water resistance value generating device, a two fluid generating device, and a compressed air supply unit. The water resistance value generating device is provided with a liquid supply pipe that outputs the adjusted resistance value. Cutting fluid, the compressed air supply unit is provided with an air supply pipe to output high-pressure gas, the two fluid generating devices include a plurality of pressure control units, each of the pressure control units is connected to a first branch pipe and a second branch pipe that are used as input ends, and as For each liquid spray pipe at the output end of the pressure control unit, a plurality of the first branch pipes are connected in parallel with the liquid supply pipe, a plurality of the second branch pipes are connected in parallel with the air supply pipe, and the liquid spray pipe is connected with the spray head of the cutting machine body, After the input cutting fluid and high-pressure gas are adjusted by the pressure control unit, the gas-liquid two-fluid is output and delivered to the spray head through the spray pipe. 如請求項1所述之具可調變二流體的晶圓切割系統,其中該第二支管上安裝著壓力表,監控輸出的氣體壓力。The wafer cutting system with adjustable two fluids according to claim 1, wherein a pressure gauge is installed on the second branch pipe to monitor the output gas pressure. 如請求項1所述之具可調變二流體的晶圓切割系統,其中該噴液管上安裝著電磁開關。The wafer cutting system with adjustable two fluids according to claim 1, wherein an electromagnetic switch is installed on the liquid spray pipe. 如申請項1所述之具可調變二流體的晶圓切割系統,其中該切割機體的切割刀具設有至少二噴頭,每個該壓力控制單元是個別控制相對應該噴頭輸出的氣液二流體壓力值。The wafer cutting system with adjustable two fluids as described in application item 1, wherein the cutting tool of the cutting machine body is provided with at least two nozzles, and each pressure control unit individually controls the gas, liquid, and two fluids output by the corresponding nozzle Pressure value. 如請求項1所述之具可調變二流體的晶圓切割系統,其中該供液管所連接的每個該第一支管與該供氣管所連接的每個該第二支管上皆設有一流量控制閥。The wafer cutting system with adjustable two fluids according to claim 1, wherein each of the first branch pipe connected to the liquid supply pipe and each second branch pipe connected to the gas supply pipe is provided with a Flow control valve.
TW109204730U 2020-04-17 2020-04-21 Wafer cutting system having two adjustable fluids unit TWM599023U (en)

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CN202020579949.2U CN211993637U (en) 2020-04-17 2020-04-17 Wafer cutting system capable of adjusting two fluids

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI807500B (en) * 2021-03-04 2023-07-01 日商斯庫林集團股份有限公司 Substrate processing apparatus and substrate processing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI807500B (en) * 2021-03-04 2023-07-01 日商斯庫林集團股份有限公司 Substrate processing apparatus and substrate processing method

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