JP3046835B2 - Semiconductor wafer cleaning equipment - Google Patents

Semiconductor wafer cleaning equipment

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Publication number
JP3046835B2
JP3046835B2 JP2301908A JP30190890A JP3046835B2 JP 3046835 B2 JP3046835 B2 JP 3046835B2 JP 2301908 A JP2301908 A JP 2301908A JP 30190890 A JP30190890 A JP 30190890A JP 3046835 B2 JP3046835 B2 JP 3046835B2
Authority
JP
Japan
Prior art keywords
semiconductor wafer
pipe
hopper
dust
way valve
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2301908A
Other languages
Japanese (ja)
Other versions
JPH04171818A (en
Inventor
益太 多田
隼明 福本
寿朗 大森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2301908A priority Critical patent/JP3046835B2/en
Publication of JPH04171818A publication Critical patent/JPH04171818A/en
Application granted granted Critical
Publication of JP3046835B2 publication Critical patent/JP3046835B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Description

【発明の詳細な説明】 [産業上の利用分野] この発明は、氷粒子を半導体ウエハに噴射して半導体
ウエハを洗浄する半導体ウエハの洗浄装置に関するもの
である。
Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor wafer cleaning apparatus for cleaning a semiconductor wafer by injecting ice particles onto the semiconductor wafer.

[従来の技術] 第2図は例えば特開昭62−226629号公報に示された従
来の半導体ウエハの洗浄装置を示す構成図であり、図に
おいて(1)は製氷容器、(2)は液体窒素源、(3)
は製氷容器(1)内に入った液体冷媒である液体窒素、
(4)は製氷容器(1)内に設けられた散気管、(5)
は熱交換器、(6)は先端部が製氷容器(1)内に臨ん
だスプレ−ノズル、(7)は純水源、(8)は氷粒子、
(9)はスクリュフィ−ダ、(10)は氷粒子ホッパ−、
(11)はブラスト装置、(12)は半導体ウエハ、(13)
は半導体ウエハ(12)上の汚染粒子である。
[Prior Art] FIG. 2 is a block diagram showing a conventional semiconductor wafer cleaning apparatus disclosed in, for example, Japanese Patent Application Laid-Open No. 62-226629, wherein (1) is an ice making container, and (2) is a liquid. Nitrogen source, (3)
Is liquid nitrogen, which is a liquid refrigerant contained in the ice making container (1),
(4) is an air diffuser provided in the ice making container (1), (5)
Is a heat exchanger, (6) is a spray nozzle whose tip faces the inside of the ice making vessel (1), (7) is a pure water source, (8) is ice particles,
(9) is a screw feeder, (10) is an ice particle hopper,
(11) is a blast device, (12) is a semiconductor wafer, (13)
Are contaminant particles on the semiconductor wafer (12).

例えば、断面積が400×400mm2で高さが1200mmの製氷
容器(1)は、液体窒素源(2)から供給された液体窒
素(3)によって高さ500mmまで満たされている。この
液体窒素(3)において、散気管(4)から窒素ガスを
300/m2・minの割合で吹き出すことによって、液体窒
素(3)の表面に数mmの波を生じさせる。この窒素ガス
は液体窒素源(2)から熱交換器(5)を介して与えら
れる。一方、製氷容器(1)の上部に設けられたスプレ
−ノズル(6)には純水源(7)から2.0kg/cm2Gの圧力
と0.1/minの流量で純水が供給されるとともに、2.0kg
/cm2Gの圧力と8N/minの流量で窒素ガスが供給され
る。そして、純水がスプレ−ノズル(6)から霧状に噴
射される。こうして、液体窒素(3)内に噴射された純
水は瞬時に微小な氷粒子(8)となる。上記の噴射条件
では約20μmレベルの氷粒子(8)が形成されるが、こ
れらの微小な氷粒子(8)は純水の噴射条件や液体窒素
中の潜在時間などを調節することによって製造すること
ができる。
For example, an ice making container (1) having a sectional area of 400 × 400 mm 2 and a height of 1200 mm is filled up to a height of 500 mm with liquid nitrogen (3) supplied from a liquid nitrogen source (2). In this liquid nitrogen (3), nitrogen gas is supplied from the air diffuser (4).
By blowing at a rate of 300 / m 2 · min, a wave of several mm is generated on the surface of liquid nitrogen (3). This nitrogen gas is provided from a liquid nitrogen source (2) via a heat exchanger (5). On the other hand, pure water is supplied from a pure water source (7) at a pressure of 2.0 kg / cm 2 G and a flow rate of 0.1 / min to a spray nozzle (6) provided at an upper portion of the ice making container (1). 2.0kg
Nitrogen gas is supplied at a pressure of / cm 2 G and a flow rate of 8 N / min. Then, pure water is sprayed from the spray nozzle (6) in a mist state. Thus, the pure water injected into the liquid nitrogen (3) instantaneously becomes fine ice particles (8). Ice particles (8) having a level of about 20 μm are formed under the above-described jetting conditions. These fine ice particles (8) are produced by adjusting the jetting conditions of pure water, the latent time in liquid nitrogen, and the like. be able to.

こうして製造された氷粒子(8)は、たとえばスクリ
ュフィ−ダ(9)によって氷粒子ホッパ−(10)内に輸
送される。氷粒子ホッパ−(10)内の氷粒子(8)は次
にブラスト装置(11)に供給される。このブラスト装置
(11)は、たとえば高圧気体エジェクタ方式のものであ
って、5kg/cm2Gの高圧で1N/minの流量の窒素ガスによ
って、氷流量(8)を0.3/minの割合で噴射させる。
この噴射された氷粒子(8)を半導体ウエハ(12)の表
面に吹き付けることによって、汚染粒子(13)や汚れを
洗浄除去する。
The ice particles (8) thus produced are transported into an ice particle hopper (10) by, for example, a screw feeder (9). The ice particles (8) in the ice particle hopper (10) are then fed to a blasting device (11). The blast device (11) is, for example, of a high-pressure gas ejector type, and injects an ice flow (8) at a rate of 0.3 / min with nitrogen gas at a high pressure of 5 kg / cm 2 G and a flow rate of 1 N / min. Let it.
The sprayed ice particles (8) are sprayed on the surface of the semiconductor wafer (12) to wash and remove contaminant particles (13) and dirt.

[発明が解決しようとする課題] 従来の半導体ウエハの洗浄装置は以上のように構成さ
れ、液体窒素が冷媒配管である窒素配管(20)等で蒸発
して気体混合となるときに窒素配管(20)等の内壁に衝
撃を与え、また内壁材質を削ることにより、ダストが発
生し、製氷容器(1)内の液体窒素(3)中に混在し、
このダストが氷粒子(8)に付着し、最終的には半導体
ウエハ(12)に付着してしまう問題点があった。
[Problems to be Solved by the Invention] A conventional semiconductor wafer cleaning apparatus is configured as described above, and when liquid nitrogen evaporates in a nitrogen pipe (20) or the like as a refrigerant pipe and becomes a gas mixture, a nitrogen pipe ( 20) Impacts on the inner wall, etc., and shaving of the inner wall material generates dust, which is mixed in the liquid nitrogen (3) in the ice making container (1),
There is a problem that the dust adheres to the ice particles (8) and finally adheres to the semiconductor wafer (12).

この発明は、上記のような問題点を解消するためにな
されたもので、液体冷媒中にダストが混在した場合、す
みやかにそれを検知し、クリ−ンな液体冷媒のみが製氷
容器内に導入することができる半導体ウエハの洗浄装置
を得ることを目的とする。
SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problems. When dust is mixed in a liquid refrigerant, the dust is immediately detected, and only a clean liquid refrigerant is introduced into the ice making container. It is an object of the present invention to obtain a semiconductor wafer cleaning apparatus that can perform the cleaning.

[課題を解決するための手段] この発明に係る半導体ウエハの洗浄装置は、冷媒配管
から分岐して設けられたサンプリング配管と、このサン
プリング配管からサンプリングした液体冷媒中のダスト
量を測定するダストカウンタ−と、前記冷媒配管に設け
られ前記ダストカウンタ−と連動して動作する三方弁
と、この三方弁に先端部が接続され他端部がホッパーの
外部に接続されたブロー配管とを備えたものである。
Means for Solving the Problems A semiconductor wafer cleaning apparatus according to the present invention includes a sampling pipe branched from a refrigerant pipe, and a dust counter for measuring an amount of dust in a liquid refrigerant sampled from the sampling pipe. And a three-way valve provided in the refrigerant pipe and operating in conjunction with the dust counter; and a blow pipe having a tip connected to the three-way valve and the other end connected to the outside of the hopper. It is.

[作 用] この発明における半導体ウエハの洗浄装置は、サンプ
リング配管からサンプリングした液体冷媒中のダスト量
を測定し、所定量以上のときには三方弁の動作により製
氷容器内への液体冷媒の供給を停止し、液体冷媒をブロ
ー配管を通じてホッパーの外部に導き、ホッパー内部の
氷粒子の昇温を防止する。
[Operation] The semiconductor wafer cleaning apparatus according to the present invention measures the amount of dust in the liquid refrigerant sampled from the sampling pipe, and stops the supply of the liquid refrigerant into the ice making container by operating a three-way valve when the amount is equal to or more than a predetermined amount. Then, the liquid refrigerant is guided to the outside of the hopper through the blow pipe to prevent the temperature of ice particles inside the hopper from rising.

[実施例] 以下、この発明の実施例を図について説明する。第1
図はこの発明の一実施例を示す構成で、第2図と同一ま
たは相当部分は同一符号を付し、その説明は省略する。
Hereinafter, an embodiment of the present invention will be described with reference to the drawings. First
The figure shows a configuration of one embodiment of the present invention, and the same or corresponding parts as those in FIG.

図において、(14)は一端が液体窒素源(2)と接続
された窒素配管(20)に取り付けられた三方弁、(15)
は三方弁に先端が接続されたブロ−配管、(16)は窒素
配管(20)から分岐されたサンプリング配管、(17)は
ダストカウンタ−である。
In the figure, (14) is a three-way valve attached to a nitrogen pipe (20) connected at one end to a liquid nitrogen source (2), (15)
Is a blow pipe having a tip connected to a three-way valve, (16) is a sampling pipe branched from a nitrogen pipe (20), and (17) is a dust counter.

次に、動作について説明する。液体窒素(3)は、ス
プレ−ノズル(6)から微噴霧された純水を凍結させて
微小な氷粒子を得るための冷媒に使用するが、その際、
窒素配管(20)中の液体窒素に混在したダストを常にダ
ストカウンタ−(17)により計測している。そして、ダ
ストの発生が起こった場合、三方弁(14)の切換によ
り、液体窒素は製氷容器(1)のホッパ−(1a)の外部
に導入されるようにし製氷容器(1)内への液体窒素
(3)の導入は停止される。また、その際、製氷容器
(1)内の液体窒素(3)の供給は停止されるため、ス
プレ−ノズル(6)からの純水の供給も同時に停止され
る。ここで、液体窒素は製氷容器(1)のホッパ−(1
a)の外部に導入することにより、ホッパ−(1a)を冷
却し、ホッパ−(1a)内部の氷粒子(8)が昇温するこ
とを防止している。
Next, the operation will be described. The liquid nitrogen (3) is used as a refrigerant for freezing pure water finely sprayed from the spray nozzle (6) to obtain fine ice particles.
Dust mixed in liquid nitrogen in the nitrogen pipe (20) is always measured by the dust counter (17). When dust is generated, the three-way valve (14) is switched so that liquid nitrogen is introduced to the outside of the hopper (1a) of the ice making container (1) so that the liquid nitrogen enters the ice making container (1). The introduction of nitrogen (3) is stopped. Also, at this time, the supply of liquid nitrogen (3) in the ice making container (1) is stopped, so that the supply of pure water from the spray nozzle (6) is also stopped. Here, the liquid nitrogen was supplied to the hopper (1) of the ice making container (1).
The hopper (1a) is cooled by introducing it to the outside of (a), and the temperature of the ice particles (8) inside the hopper (1a) is prevented from rising.

上記のように窒素配管(20)にダストが発生した場合
には、三方弁(14)を切換えて液体窒素をブロ−してい
るが、ダストカウンタ−(17)の計測値が基準値を下回
った場合には、三方弁(14)の切換えにより、液体窒素
を製氷容器(1)内に導入し、またスプレ−ノズル
(6)からの純水の供給も再開する。
When dust is generated in the nitrogen pipe (20) as described above, the three-way valve (14) is switched to blow liquid nitrogen, but the measured value of the dust counter (17) falls below the reference value. In this case, by switching the three-way valve (14), liquid nitrogen is introduced into the ice making vessel (1), and the supply of pure water from the spray nozzle (6) is restarted.

なお、上記実施例では、流体冷媒として液体窒素を用
いた場合について説明したが、勿論これに限定されるも
のではなく、例えば、液体ヘリウムでもよい。また、サ
ンプリング配管(16)から採取される液体窒素のダスト
量の測定を自動的に計測し、所定量を上回ったときに三
方弁(14)に動作信号が伝わり、三方弁(14)は自動的
に動作し、液体窒素を製氷容器(1)のホッパ−(1a)
の外部に導くようにしてもよい。
In the above-described embodiment, the case where liquid nitrogen is used as the fluid refrigerant has been described. However, the present invention is not limited to this case. For example, liquid helium may be used. In addition, the measurement of the amount of liquid nitrogen dust collected from the sampling pipe (16) is automatically measured, and when the amount exceeds a predetermined amount, an operation signal is transmitted to the three-way valve (14), and the three-way valve (14) is automatically operated. Hopper (1a) of the ice-making container (1) that operates liquid nitrogen
May be guided to the outside.

[発明の効果] 以上説明したように、この発明の半導体ウエハの洗浄
装置によれば、サンプリング配管からサンプリングした
液体冷媒中のダスト量を測定し、所定量以上のときには
製氷容器内への液体冷媒の供給を停止するようになって
いるので、氷粒子にダストが付着することは防止され、
半導体ウエハをクリ−ンに洗浄することができるという
効果がある。また、ダストカウンターの値が所定値を超
えた場合には三方弁の動作により液体冷媒がブロー配管
を通じてホッパーの外部に導かれ、ホッパー内部の氷粒
子の昇温が防止される。
[Effects of the Invention] As described above, according to the apparatus for cleaning a semiconductor wafer of the present invention, the amount of dust in the liquid refrigerant sampled from the sampling pipe is measured. Since the supply of ice is stopped, dust is prevented from adhering to the ice particles,
There is an effect that the semiconductor wafer can be cleaned cleanly. When the value of the dust counter exceeds a predetermined value, the operation of the three-way valve guides the liquid refrigerant to the outside of the hopper through the blow pipe, thereby preventing the temperature of ice particles inside the hopper from rising.

【図面の簡単な説明】[Brief description of the drawings]

第1図はこの発明の一実施例による半導体ウエハの洗浄
装置を示す構成図、第2図は従来の半導体ウエハの洗浄
装置の一例を示す構成図である。 図において、(1)は製氷容器、(3)は液体冷媒、
(6)はスプレ−ノズル、(8)は氷粒子、(12)は半
導体ウエハ、(14)は三方弁、(16)はサンプリング配
管、(17)はダストカウンタ−、(20)は窒素配管であ
る。 なお、各図中、同一符号は同一、または相当部分を示
す。
FIG. 1 is a block diagram showing a semiconductor wafer cleaning apparatus according to one embodiment of the present invention, and FIG. 2 is a block diagram showing an example of a conventional semiconductor wafer cleaning apparatus. In the figure, (1) is an ice making container, (3) is a liquid refrigerant,
(6) spray nozzle, (8) ice particles, (12) semiconductor wafer, (14) three-way valve, (16) sampling pipe, (17) dust counter, (20) nitrogen pipe It is. In the drawings, the same reference numerals indicate the same or corresponding parts.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 大森 寿朗 兵庫県伊丹市瑞原4丁目1番地 三菱電 機株式会社エル・エス・アイ研究所内 (56)参考文献 特開 昭63−283133(JP,A) 特開 昭63−153825(JP,A) (58)調査した分野(Int.Cl.7,DB名) H01L 21/304 ──────────────────────────────────────────────────続 き Continuation of the front page (72) Inventor Toshiro Omori 4-1-1 Mizuhara, Itami-shi, Hyogo Mitsubishi Electric Corporation LSI Research Institute (56) References JP-A-63-283133 (JP, A JP-A-63-153825 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) H01L 21/304

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】冷媒配管を通して液体冷媒が供給されると
ともに内部にホッパーが設けられた製氷容器内に、スプ
レーノズルから純水を霧状に噴射して超微小な氷粒子を
製造し、この氷粒子を半導体ウエハに噴射して半導体ウ
エハを洗浄する半導体ウエハの洗浄装置において、前記
冷媒配管から分岐して設けられたサンプリング配管と、
このサンプリング配管からサンプリングした液体冷媒中
のダスト量を測定するダストカウンターと、前記冷媒配
管に設けられ前記ダストカウンターと連動して動作する
三方弁と、この三方弁に先端部が接続され他端部が前記
ホッパーの外部に接続されたブロー配管とを備え、前記
ダストカウンターの値が所定値を超えた場合には前記三
方弁の動作により前記液体冷媒が前記ブロー配管を通じ
て前記ホッパーの外部に導かれ、ホッパー内部の前記氷
粒子の昇温を防止するようになっている半導体ウエハの
洗浄装置。
A liquid refrigerant is supplied through a refrigerant pipe and pure water is sprayed from a spray nozzle into an ice making container provided with a hopper therein to produce ultra-fine ice particles. In a semiconductor wafer cleaning apparatus for cleaning a semiconductor wafer by injecting ice particles onto the semiconductor wafer, a sampling pipe branched from the refrigerant pipe,
A dust counter for measuring the amount of dust in the liquid refrigerant sampled from the sampling pipe, a three-way valve provided in the refrigerant pipe and operating in conjunction with the dust counter, and a distal end connected to the three-way valve and the other end A blow pipe connected to the outside of the hopper, and when the value of the dust counter exceeds a predetermined value, the liquid refrigerant is guided to the outside of the hopper through the blow pipe by the operation of the three-way valve. A semiconductor wafer cleaning apparatus adapted to prevent the temperature of the ice particles inside the hopper from rising.
JP2301908A 1990-11-05 1990-11-05 Semiconductor wafer cleaning equipment Expired - Fee Related JP3046835B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2301908A JP3046835B2 (en) 1990-11-05 1990-11-05 Semiconductor wafer cleaning equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2301908A JP3046835B2 (en) 1990-11-05 1990-11-05 Semiconductor wafer cleaning equipment

Publications (2)

Publication Number Publication Date
JPH04171818A JPH04171818A (en) 1992-06-19
JP3046835B2 true JP3046835B2 (en) 2000-05-29

Family

ID=17902562

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2301908A Expired - Fee Related JP3046835B2 (en) 1990-11-05 1990-11-05 Semiconductor wafer cleaning equipment

Country Status (1)

Country Link
JP (1) JP3046835B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3343013B2 (en) * 1995-12-28 2002-11-11 大日本スクリーン製造株式会社 Substrate cleaning method and apparatus
JP5755465B2 (en) * 2011-02-28 2015-07-29 ホシザキ電機株式会社 Automatic ice machine

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4828660A (en) * 1986-10-06 1989-05-09 Athens Corporation Method and apparatus for the continuous on-site chemical reprocessing of ultrapure liquids
JPS63283133A (en) * 1987-05-15 1988-11-21 Mitsubishi Electric Corp Device for formation of fine ice particle

Also Published As

Publication number Publication date
JPH04171818A (en) 1992-06-19

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