TWM597508U - 減低聚合物沉積的設備 - Google Patents
減低聚合物沉積的設備 Download PDFInfo
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- 230000008021 deposition Effects 0.000 title 1
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- 239000000758 substrate Substances 0.000 claims abstract description 106
- 238000005086 pumping Methods 0.000 claims description 38
- 239000010453 quartz Substances 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
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- 238000000034 method Methods 0.000 abstract description 10
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- 238000005530 etching Methods 0.000 description 5
- 238000009616 inductively coupled plasma Methods 0.000 description 4
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- 230000001154 acute effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
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- 229910052594 sapphire Inorganic materials 0.000 description 1
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- 229910010271 silicon carbide Inorganic materials 0.000 description 1
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Abstract
本揭示案的實現方式提供了一種用於靜電吸盤的處理配件。在一個實現方式中,提供了一種基板支撐組件。基板支撐組件包括靜電吸盤,靜電吸盤具有形成在靜電吸盤的上部分中的第一凹陷。處理配件環繞靜電吸盤。處理配件包括內環和設置在內環的徑向外側的外環。外環包括形成在上環的上部分中的第二凹陷。內環定位在第一凹陷和第二凹陷內並由第一凹陷和第二凹陷支撐。內環的上表面和外環的上表面是共面。
Description
本揭示案的實例整體涉及用於處理基板(諸如半導體基板)的設備。更特定而言,揭示了一種用於靜電吸盤的處理配件。
在諸如半導體基板和顯示面板之類的基板的處理中,基板放在處理腔室中的基板支撐件上,同時在處理腔室中維持合適的處理條件以在基板的表面上沉積、蝕刻、形成層或以其他方式處理基板的表面。在蝕刻製程期間,驅動蝕刻製程的電漿可能不均勻地分佈在基板表面上。不均勻性在基板表面的邊緣處特別地明顯。這樣的不均勻性產生不良處理結果。因此,一些處理腔室使用邊緣環(邊緣環也可以被稱為處理配件環),以便提高電漿均勻性並改進處理良率。
然而,已經觀察到的是,蝕刻製程可能造成聚合物材料聚積在基板表面的邊緣處。聚合物材料可能卡在基板的邊緣與處理配件環之間的間隙中並擴散到基板支撐件的靜電吸盤中。當抬起基板和/或斷開電漿時,聚合物材料可能沉積回到基板表面上,從而不利地影響基板處理。
因此,本領域中需要的是能夠解決以上所論述的問題的設備。
在一個實現方式中,提供了基板支撐組件。基板支撐組件包括靜電吸盤,靜電吸盤具有形成在靜電吸盤的上部分中的第一凹陷。處理配件環繞靜電吸盤。處理配件包括內環和設置在內環的徑向外側的外環。外環包括形成在外環的上部分中的第二凹陷。內環定位在第一凹陷和第二凹陷內並由第一凹陷和第二凹陷支撐。內環的上表面和外環的上表面是共面。
在另一個實現方式中,提供了一種用於處理基板的基板支撐組件。基板支撐組件包括基板支撐件和設置在基板支撐件上的靜電吸盤。靜電吸盤包括形成在靜電吸盤的上部分中的第一凹陷。處理配件環繞靜電吸盤。處理配件包括內環和設置在內環的徑向外側的外環。外環包括形成在外環的上部分中的第二凹陷。內環定位在第一凹陷和第二凹陷內並由第一凹陷和第二凹陷支撐。外環的上表面高於內環的上表面。多個泵送通道穿過外環形成。泵送通道朝著遠離內環的方向向下地成角度。
在又一個實現方式中,一種基板支撐組件包括:一靜電吸盤,該靜電吸盤包括一第一凹陷,該第一凹陷形成在該靜電吸盤的一上部分中。一處理配件,環繞該靜電吸盤。該處理配件包括:一內環,該內環包括一上表面。一外環設置在該內環的徑向外側。該外環包括一第一上表面及一第二上表面。其中該第一上表面與該內環的該
上表面是共面。該第二上表面在遠離該內環的一方向上以一角度傾斜。
本揭示案的實現方式提供了一種用於基板支撐組件的處理配件,基板支撐組件包括設置在基板支撐件的頂表面上的靜電吸盤。處理配件環繞靜電吸盤並包括相對於基板支撐件同心地定位的內環和外環。內環和外環的上表面可以是共面或處於不同高度,並且外環可以包括泵送通道,以幫助從處理配件和靜電吸盤的邊緣排出不想要的聚合物材料,從而提高基板品質和處理良率。
圖1是根據本揭示案的一個實例的處理腔室100的示意性截面圖。所示的處理腔室100適於蝕刻、化學氣相沉積(chemical vapor deposition; CVD)或其他基於電漿的製程。處理腔室100包括腔室主體101和設置在腔室主體101上的蓋103。腔室主體101和蓋103一起限定內部容積。腔室主體101典型地耦接到電接地107。基板支撐組件111設置在內部容積內,以在處理期間將基板109支撐在基板支撐組件111上。處理腔室100還包括電感耦合電漿設備102和控制器155,電感耦合電漿設備102用於在處理腔室100內產生電漿,控制器155適於控制處理腔室100的操作。
基板支撐組件111包括一或多個電極153,一或多個電極153透過匹配網路120耦接到偏置源119以便於在處理期間偏置基板109。偏置源119可以是在例如約13.56 MHz的頻率下高達約1000 W(但不限於約1000 W)的RF能量的源,但是可以根據需要針對特定應用提供其他頻率和功率。偏置源119可以能夠產生連續或脈衝的功率中的任一個或兩者。在一些實例中,偏置源119可以是DC或脈衝DC源。在一些實例中,偏置源119可以能夠提供多個頻率。一或多個電極153可以耦接到吸緊電源160以便於在處理期間吸緊基板109。基板支撐組件111包括環繞基板109的處理配件(未示出)。以下將更詳細地描述處理配件的各種實現方式。
電感耦合電漿設備102設置在蓋103上方並被配置為將RF功率電感耦合到處理腔室100中,以在處理腔室100內產生電漿。電感耦合電漿設備102包括設置在蓋103上方的第一線圈110和第二線圈112。每個線圈110、112的相對位置、直徑比和/或每個線圈110、112中的匝數各自可以根據需要進行選擇,以控制正在形成的電漿的輪廓或密度。第一線圈110和第二線圈112中的每個經由RF饋電結構106透過匹配網路114耦接到RF電源108。RF電源108可以能夠在從50 kHz至13.56 MHz的範圍內的可調諧的頻率下產生高達約4000 W(但不限於4000 W),但是可以根據需要針對特定應用利用其他頻率和功率。
在一些實例中,可以在RF饋電結構106與RF電源108之間提供功率分配器105(諸如分壓電容器),以控制被提供到相應的第一線圈和第二線圈的RF功率的相對量。在一些實例中,功率分配器105可以結合到匹配網路114中。
加熱器元件113可以設置在蓋103頂上,以便於加熱處理腔室100的內部。加熱器元件113可以設置在蓋103與第一線圈110和第二線圈112之間。在一些實例中,加熱器元件113可以包括電阻加熱元件,並且可以耦接到電源115(諸如AC電源),電源115被配置為提供足夠的能量以將加熱器元件113的溫度控制在所期望的範圍內。
在操作期間,將基板109(諸如半導體晶圓或適於電漿處理的其他基板)放置在基板支撐組件111上,並且透過進入埠117將處理氣體從氣體面板116供應到腔室主體101的內部容積中。另外地或替代地,可以透過設置在蓋103中的進入埠(未示出)來將處理氣體供應到腔室主體101的內部容積中。在任一情況下,藉由從RF電源108向第一線圈110和第二線圈112施加功率,處理氣體在處理腔室100中被點燃成電漿118。在一些實例中,來自偏置源119(諸如RF或DC源)的功率也可以透過匹配網路120提供到在基板支撐組件111內的電極153。在處理腔室100的內部內的壓力可以使用閥121和真空泵122進行控制。腔室主體101的溫度可以使用延行穿過腔室主體101的容納液體的導管(未示出)進行控制。
控制器155被配置為在處理期間控制處理腔室100的操作。控制器155包括中央處理單元(central processing unit; CPU)123、記憶體124和用於CPU 123的支援電路125,並且便於處理腔室100的部件的控制。控制器155可以是可在工業環境中用於控制各種腔室和子處理器的任何形式的通用電腦處理器中的一種。記憶體124存儲軟體(源或目標代碼),所述軟體可以被執行或調用來以本文描述的方式控制處理腔室100的操作。
圖2是根據本文描述的一個實例的處理腔室100的基板支撐組件111的放大示意圖。基板支撐組件111包括處理配件203、基板支撐件205和靜電吸盤229。靜電吸盤229設置在基板支撐件205的頂表面上並被處理配件203環繞。基板支撐件205包括環繞絕緣板227的接地板226和組裝成豎直堆疊的設施板228。基板支撐件205還包括環繞設施板228和靜電吸盤229的套筒230,以使RF熱靜電吸盤229與接地板226絕緣。套筒230可以由石英製成。
設施板228定位在接地板226的下部分上方並介於絕緣板227與靜電吸盤229之間。靜電吸盤229可以包括嵌入絕緣材料236中的多個電極153(示出了四個電極)。電極153耦接到吸緊電源160(如圖1所示)以促進將基板109吸緊到靜電吸盤229的上表面233。可以任選地在絕緣材料236中形成一或多個加熱或冷卻通道,以便於在處理期間對基板109的溫度控制。在一些方面中,電極153是透過匹配網路120耦接到偏置源119(如圖1所示)的陰極。
處理配件203包括蓋環246、內環242和外環244,它們相對於穿過基板支撐組件111的中心的軸線同心地佈置。在一些實例中,蓋環246是任選的,並且可能不是必需的。在使用蓋環246的情況下,蓋環246可定位在外環244的上表面241上。蓋環246環繞基板109的徑向向外的邊緣。在一些實例中,蓋環246的大小設定為鄰接基板109的邊緣。蓋環246有助於在處理期間保護基板109的邊緣,並且另外地,在處理期間向基板109提供橫向支撐。蓋環246可以由石英、矽或任何其他耐電漿材料製成。內環242可以由矽或任何其他耐電漿材料製成。在特定實例中,內環242由碳化矽(SiC)製成。外環244可以由石英、矽或任何其他耐電漿材料製成。在一個實例中,內環242由矽製成,而外環244由石英製成。
外環244設置在內環242的徑向外側。外環244定位在接地板226的豎直邊緣的上表面上。外環244包括形成在外環244的底表面中的底部凹陷231,以用於接合套筒230。外環244還可以包括形成在外環244的上表面241中的上凹陷249,以便於蓋環246的定位。儘管基板109被示出為具有在內環242的上表面245上方延伸的徑向向外的邊緣,但是設想的是,基板109的徑向向外的邊緣和上表面245可不重疊。即,基板109的徑向向外的邊緣可以停止在靜電吸盤229的上部分的邊緣處。
內環242由靜電吸盤229和外環244共同地支撐。內環242以內環242的上表面245和外環244的上表面241共面方式定位。例如,內環242的一部分定位在靜電吸盤229的凹陷235內並由凹陷235支撐。凹陷235可以形成在靜電吸盤229的上部分的外周中。內環242的其餘部分定位在外環244的凹陷237內並由凹陷237支撐。凹陷237可以形成在外環244的上部分的內周中。凹陷235的頂表面和凹陷237的頂表面處於相同高度。
內環242的上表面245和外環244的上表面241是共面,或處於相同高度,以便於將不想要的聚合物材料(聚積在處理配件203與靜電吸盤229的邊緣之間)泵送到真空泵122(參見圖1)。內環242在處理期間可以相對於基板109靜止。
內環242的徑向向外的邊緣可以與凹陷237的豎直壁隔開間隙「D1」,以允許內環242和/或外環244的熱膨脹。間隙「D1」可以在約0.002英寸至約0.030英寸的範圍內,例如約0.010英寸至約0.020英寸,其可以根據用於內環242和外環244的材料而變化。可以選擇間隙「D1」的大小,以防止聚合物材料沉積在內環242的徑向向外的邊緣處。在一些實例中,內環242的徑向向外的邊緣與凹陷237的豎直壁接觸。
外環244相對於內環242和基板109同心地定位。外環244輔助內環242來為基板109提供橫向支撐並減低內環242的不期望的蝕刻。在一些實例中,內環242的上表面245可以設有多個突起243(僅示出了一個)以防止基板109在處理期間滑動。圖3示出了內環242和外環244的簡化透視圖,其示出了三個突起243圍繞內環242的圓周對稱地設置以約束基板109的移動。設想的是,可以使用任何數量的突起243。突起243可以是球形帽、圓柱體、凸起的點、或具有任何其他合適的幾何形狀。突起243可以由與內環242相同或不同的材料製成。在一個實例中,突起243由碳化矽製成。
基板支撐組件111可以任選地包括一或多個致動器247,諸如步進電機或線性致動器等等。例如,一或多個致動器247設置在接地板226中。然而,設想的是,致動器247可以定位在基板支撐組件111的外部。每個致動器247適於與一或多個推動銷248接合或對接。一或多個推動銷248從接地板226延伸穿過絕緣板227和套筒230並與外環244接觸。一或多個推動銷248的致動造成外環244、內環242和蓋環246(若使用的話)相對於基板109的上表面豎直地致動或位移。外環244的位置可以被調整到適應外環244的侵蝕的高度,以便在處理期間提高在整個基板表面上的電漿均勻性。
基板支撐組件111還包括三或更多個升降桿288,以用於提升基板109離開靜電吸盤229的表面。升降桿288從接地板226、絕緣板227、設施板228延伸並穿過靜電吸盤229到達相應升降桿孔286(圖3)。升降桿288由致動器284控制。每個致動器284適於與升降桿288接合或對接以使升降桿288向上和/或向下移動。
一或多個波紋管可以圍繞一或多個推動銷248中的每個定位,以減低在處理腔室100(如圖1所示)內的顆粒污染。另外,一或多個推動銷導引件239(諸如導引套筒或軸承)可定位在圍繞每個推動銷248設置的套筒230中,以便於每個推動銷248的致動。推動銷導引件239提供用於推動銷248的支承表面。推動銷248的致動可以由控制器155(如圖1所示)可操作地控制。
在一個實例中,一或多個致動器247是微型步進電機。在另一個實例中,一或多個致動器247是壓電電機。在一個實例中,一或多個推動銷248由石英或藍寶石製成。
在一個實例中,控制器可以是通用電腦,其包括用於存儲軟體的記憶體。軟體可以包括指令,該等指令用於檢測內環242和外環244的腐蝕並接著指示一或多個致動器247升高一或多個推動銷248,以使得內環242和外環244被升高到所期望的高度。
圖4A示出了根據一個實現方式的處理配件400的剖視圖。可以使用處理配件400代替圖2的處理配件203。處理配件400包括內環442、外環444和泵送環446。外環444設置在內環442的徑向外側。內環442和外環444在設計上與內環242和外環244類似,不同之處在於外環444的整個上表面441和內環442的整個上表面445是共面,或處於相同高度。
泵送環446設置在外環444上方。泵送環446可以具有設置在泵送環446的底表面處的三或更多個突起448。突起448在外環444與泵送環446之間產生間隙「D2」,以允許不想要的聚合物材料(聚積在處理配件400與靜電吸盤229的邊緣之間)通過,不想要的聚合物材料隨後透過真空泵122(圖1)被泵送出處理腔室。突起448可以圍繞泵送環446的圓周對稱地佈置。圖4B示出了泵送環446的透視圖,其示出了六個突起448設置在泵送環446的底表面450處。可以使用任何數量的突起以獲得所期望和/或最大的泵送面積。
間隙「D2」可以在約0.002英寸至約0.1英寸的範圍內,諸如約0.010英寸至約0.050英寸。在替代實現方式中,出於相同目的,可在外環444的上表面441處提供突起448,以產生間隙「D2」。在任一情況下,都可以選擇間隙「D2」的大小來改變泵送效率。泵送環446可以由石英、矽或任何其他耐電漿材料製成。內環442和外環444可以由與如以上論述的內環242和外環244相同的材料製成。
圖5示出了根據一個實現方式的處理配件500的剖視圖。處理配件500包括內環542和設置在內環542的徑向外側的外環544。在此實現方式中,內環542和外環544在設計上與內環242和外環244類似,不同之處在於外環544具有第一上表面541和第二上表面543。第一上表面541與內環542的上表面545共面。第二上表面543具有朝向遠離內環542的方向的斜率。在一些實例中,外環544的整個上表面可以是斜坡。第二上表面543的縱向軸線可以相對於沿著外環544的外周表面547延伸的方向成角度「α」。在一個實現方式中,角度「α」在約35度至約85度的範圍內,諸如約45度至約75度,例如約60度。與具有整個平面上表面的外環(例如,處理配件400)相比,第二上表面543的斜率允許不想要的聚合物材料(聚積在處理配件500與靜電吸盤229的邊緣之間)被更有效地泵送到真空泵122。
圖6A示出了根據一個實現方式的處理配件600的剖視圖。處理配件600包括內環642和設置在內環642的徑向外側的外環644。在內環642的上表面645處設置多個突起643。與突起243類似,突起643可以在處理期間幫助基板(未示出)的定位。處理配件600可以任選地包括定位在外環644的上表面641上的蓋環646。內環642、外環644和蓋環646(若使用的話)在設計上與內環242、外環244和蓋環246類似,不同之處在於外環644的上表面641比內環642的上表面645高距離「D3」。在一個實現方式中,距離「D3」可以在約0.01英寸至約5英寸的範圍內,諸如約0.1英寸至約2英寸,例如約1英寸。
在可包括在本揭示案中論述的任何其他實現方式中或與其組合的一個實現方式中,外環644還包括穿過外環644形成的多個泵送通道647。泵送通道647可以從形成在外環644的上部分的內周中的凹陷637的豎直壁639延伸到外環644的外周表面653。泵送通道647可以朝著遠離內環642的方向向下地成角度。例如,泵送通道647的縱向方向可以相對於沿著外周表面653延伸的方向成角度「β」。在一個實現方式中,角度「β」在約30度至約88度的範圍內,諸如約40度至約65度,例如約50度。聚積在處理配件600與靜電吸盤229的邊緣之間的不想要的聚合物材料或顆粒可以透過泵送通道647被泵送到真空泵122(圖1)。
圖6B示出了處理配件600的一部分的透視圖,其示出了泵送通道647形成在位於外環644的上部分的豎直壁639中。泵送通道647可以圍繞外環644的圓周對稱地設置。泵送通道647可以具有任何合適的形狀,諸如圓形、方形、三角形等。泵送通道647的直徑可以在約0.1英寸至約1英寸的範圍內。
本揭示案的實現方式造成在處理腔室中處理的基板的品質的提高,因為可以透過形成在處理配件的外環中的泵送通道更有效地排出聚積在處理配件和靜電吸盤的邊緣處的不想要的聚合物材料。基板品質提高致使處理良率提高。此外,利用本揭示案的處理腔室藉由延長處理配件的使用壽命來減低用於預防性維護的停機時間。
圖7是從基板支撐件(即靜電吸盤229)的表面去除污染物的示例性方法700的流程圖。
在框704處,在內環242的上表面245上對稱地佈置多個突起243。如圖2和圖3所示,圍繞內環242的圓周對稱地設置突起243,以約束基板109的移動。在框708處,外環244的上表面241與內環242的上表面245共面地佈置。如前所述,藉由將內環242的上表面245與外環244的上表面241共面地佈置,便於泵送不想要的聚合物材料。在沿著路徑701所示的一個配置中,間隙D2(即,通道)可以在水平方向上取向,以便於泵送不想要的材料,如圖4所示。在框712處,穿過外環644提供通道647。如沿著路徑703所示,通道647被配置為將不想要的材料從基板支撐件(例如,靜電吸盤229)泵送走。如上所述,通道647還被配置為將不想要的材料從處理配件203泵送走。在圖6A至圖6B所示的實例中,通道647具有圓形或卵形橫截面區域。在另一個實例中,通道具有方形或矩形橫截面區域(未示出)。在框716處,遠離內環642以銳角「β」定位通道647。通道647的一部分可以定位在基板109下方。基板109定位在靜電吸盤229的上表面233上。上表面233與內環242的上表面245基本上共面。如上所述,相對於沿著外周表面653延伸的方向取角度「β」。路徑705展示了包括框720的另一個實例。在框720處,在外環244上在外環544的第一上表面541下方以銳角「α」提供斜表面543,如圖5所示。在框724處,在外環244上方佈置蓋環246。在框728處,在外環244的上表面241與泵送環446的底表面之間形成間隙D2。如上所述,間隙D2(即,通道)允許將不想要的聚合物材料從基板支撐件和處理配件400傳送走。如圖4所示,在至少一個實例中,突起448可以圍繞泵送環446(例如,外環244)的圓周對稱地佈置,從而產生間隙D2。
儘管前述內容針對的是本揭示案的實現方式,但是在不脫離本揭示案的基本範圍的情況下,可以設想本揭示案的其他和進一步實現方式。
100:處理腔室
101:腔室主體
102:電漿設備
103:蓋
105:功率分配器
106:RF饋電結構
107:電接地
108:RF電源
109:基板
110:第一線圈
111:基板支撐組件
112:第二線圈
113:加熱器元件
114:匹配網路
115:電源
116:氣體面板
117:進入埠
118:電漿
119:偏置源
120:匹配網路
121:閥
122:真空泵
123:中央處理單元(CPU)
124:記憶體
125:支援電路
153:電極
155:控制器
160:吸緊電源
203:處理配件
205:基板支撐件
226:接地板
227:絕緣板
228:設施板
229:靜電吸盤
230:套筒
231:底部凹陷
233:上表面
235:凹陷
236:絕緣材料
237:凹陷
239:推動銷導引件
241:上表面
242:內環
243:突起
244:外環
245:上表面
246:蓋環
247:致動器
248:推動銷
249:上凹陷
284:致動器
286:升降桿孔
288:升降桿
400:處理配件
441:上表面
442:內環
444:外環
445:上表面
446:泵送環
448:突起
450:底表面
500:處理配件
541:第一上表面
542:內環
543:第二上表面
544:外環
545:上表面
547:外周表面
600:處理配件
637:凹陷
639:豎直壁
641:上表面
642:內環
643:突起
644:外環
645:上表面
646:蓋環
647:泵送通道
653:外周表面
700:方法
701:路徑1
702:路徑2
703:路徑3
708:框
712:框
716:框
720:框
724:框
為了能夠詳細地理解本揭示案的上述特徵的方式,可以參考本揭示案的各方面得到以上簡要地概述的本揭示案的更特定的描述,其中一些實現方式在附圖中示出。然而,應當注意,附圖僅示出了本揭示案的典型的方面,並且因此不應視為對本揭示案的範圍的限制,因為本揭示案可允許其他等效方面。
圖1是根據本揭示案的一個實例的處理腔室的示意性截面圖。
圖2是根據本文描述的一個實例的處理腔室的基板支撐組件的放大示意圖。
圖3示出了內環的簡化透視圖,其示出了突起。
圖4A示出了根據一個實現方式的處理配件的剖視圖。
圖4B示出了泵送環的透視圖,其示出了突起。
圖5示出了根據一個實現方式的處理配件的剖視圖。
圖6A示出了根據一個實現方式的處理配件的剖視圖。
圖6B示出了處理配件的一部分的透視圖,其示出了泵送通道。
圖7是從基板支撐件的表面去除污染物的示例性方法的流程圖。
為了便於理解,已經盡可能地使用相同的元件符號標示各圖共有的相同元件。另外,一個實例中的要素可以有利地適於在本文描述的其他實例中使用。
109:基板
111:基板支撐組件
153:電極
203:處理配件
205:基板支撐件
226:接地板
227:絕緣板
228:設施板
229:靜電吸盤
230:套筒
231:底部凹陷
233:上表面
235:凹陷
236:絕緣材料
237:凹陷
239:推動銷導引件
241:上表面
242:內環
243:突起
244:外環
245:上表面
246:蓋環
247:致動器
248:推動銷
249:上凹陷
284:致動器
288:升降桿
Claims (20)
- 一種基板支撐組件,包括:一靜電吸盤,包括一第一凹陷,該第一凹陷形成在該靜電吸盤的一上部分中;以及一處理配件,環繞該靜電吸盤,其中該處理配件包括:一內環;以及一外環,設置在該內環的徑向外側,其中該外環包括一第二凹陷,該第二凹陷形成在該外環的一上部分中,並且該內環定位在該第一凹陷和該第二凹陷內並由該第一凹陷和該第二凹陷支撐,使得該內環的一上表面和該外環的一上表面是共面。
- 如請求項1所述的基板支撐組件,其中該內環由矽製成。
- 如請求項1所述的基板支撐組件,其中該外環由石英製成。
- 如請求項1所述的基板支撐組件,其中該內環的該上表面具有圍繞該內環的一圓周對稱地設置的多個突起。
- 如請求項1所述的基板支撐組件,還包括:一泵送環,設置在該外環上方。
- 如請求項5所述的基板支撐組件,其中該泵送環具有多個突起,該些突起設置在該泵送環的一底表面處。
- 如請求項1所述的基板支撐組件,其中該第一凹陷的一頂表面和該第二凹陷的一頂表面處於一相同高度。
- 一種用於處理一基板的基板支撐組件,該基板支撐組件包括:一基板支撐件;一靜電吸盤,設置在該基板支撐件上,其中該靜電吸盤包括一第一凹陷,該第一凹陷形成在該靜電吸盤的一上部分中;以及一處理配件,環繞該靜電吸盤,其中該處理配件包括:一內環;一外環,設置在該內環的徑向外側,其中該外環包括一第二凹陷,該第二凹陷形成在該外環的一上部分中,其中該內環定位在該第一凹陷和該第二凹陷內並由該第一凹陷和該第二凹陷支撐,並且該外環的一上表面高於該內環的一上表面;以及多個泵送通道,穿過該外環形成,其中該泵送通道朝著遠離該內環的一方向向下地成角度。
- 如請求項8所述的基板支撐組件,其中該內環由矽製成。
- 如請求項8所述的基板支撐組件,其中該外環由石英製成。
- 如請求項8所述的基板支撐組件,其中該內環的該上表面具有多個突起,該些突起圍繞該內環的一圓周對稱地設置。
- 如請求項8所述的基板支撐組件,其中該泵送通道的一縱向方向相對於沿著該外環的一外周表面延伸的一方向成角度。
- 如請求項12所述的基板支撐組件,其中該角度在約30度至約88度的範圍內。
- 如請求項8所述的基板支撐組件,還包括:一蓋環,設置在該外環上方。
- 如請求項14所述的基板支撐組件,其中該蓋環由石英或矽製成。
- 一種基板支撐組件,包括:一靜電吸盤,包括一第一凹陷,該第一凹陷形成在該靜電吸盤的一上部分中;以及一處理配件,環繞該靜電吸盤,其中該處理配件包括: 一內環,包括一上表面;以及一外環,設置在該內環的徑向外側,該外環包括一第一上表面及一第二上表面,其中該第一上表面與該內環的該上表面是共面,且該第二上表面在遠離該內環的一方向上以一角度傾斜。
- 如請求項16所述的基板支撐組件,其中該內環由矽製成。
- 如請求項16所述的基板支撐組件,其中該外環由石英製成。
- 如請求項16所述的基板支撐組件,其中該角度為約35度至約85度。
- 如請求項16所述的基板支撐組件,其中該內環的該上表面具有多個突起,該些突起圍繞該內環的一圓周對稱地設置。
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US20230066418A1 (en) * | 2021-08-30 | 2023-03-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Focus ring for a plasma-based semiconductor processing tool |
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US6344105B1 (en) * | 1999-06-30 | 2002-02-05 | Lam Research Corporation | Techniques for improving etch rate uniformity |
US7338578B2 (en) * | 2004-01-20 | 2008-03-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Step edge insert ring for etch chamber |
US7670436B2 (en) | 2004-11-03 | 2010-03-02 | Applied Materials, Inc. | Support ring assembly |
US7520969B2 (en) * | 2006-03-07 | 2009-04-21 | Applied Materials, Inc. | Notched deposition ring |
US20090221150A1 (en) * | 2008-02-29 | 2009-09-03 | Applied Materials, Inc. | Etch rate and critical dimension uniformity by selection of focus ring material |
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