TWM595726U - UVC lighting lamp - Google Patents

UVC lighting lamp Download PDF

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TWM595726U
TWM595726U TW109202155U TW109202155U TWM595726U TW M595726 U TWM595726 U TW M595726U TW 109202155 U TW109202155 U TW 109202155U TW 109202155 U TW109202155 U TW 109202155U TW M595726 U TWM595726 U TW M595726U
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uvc
light
substrate
layer
flip chip
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TW109202155U
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Chinese (zh)
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葉志庭
陳得富
藍友成
潘錫明
莊峰輝
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宏齊科技股份有限公司
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Publication of TWM595726U publication Critical patent/TWM595726U/en

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Abstract

本創作係為一種UVC發光燈管,其結構包含一中空石英燈管及一發光模組,該中空石英燈管設置有一鋁反射層,該發光模組設置於該中空石英燈管內,且該發光模組包含一電路板、至少一基板、至少一UVC覆晶晶片及至少一石英封裝件,其中該鋁反射層相對於該至少一UVC覆晶晶片之一出光面設置。The present invention is a UVC light-emitting tube. Its structure includes a hollow quartz tube and a light-emitting module. The hollow quartz tube is provided with an aluminum reflective layer. The light-emitting module is arranged in the hollow quartz tube, and the The light-emitting module includes a circuit board, at least one substrate, at least one UVC flip chip and at least one quartz package, wherein the aluminum reflective layer is disposed relative to a light emitting surface of the at least one UVC flip chip.

Description

UVC發光燈管UVC light tube

本創作係關於一種燈管結構,特別是一種UVC發光燈管。This creation is about a lamp structure, especially a UVC luminous lamp.

近年來LED技術持續發展,行業競爭不斷加劇,各大廠商開始轉戰利基市場尋找新藍海,UV LED作為高毛利的一個細分領域發展迅速。In recent years, LED technology has continued to develop, and industry competition has intensified. Major manufacturers have begun to turn to the niche market to find a new blue ocean. UV LED, as a segment of high-margin segment, is developing rapidly.

所謂的UV,亦即Ultraviolet,也就是俗稱的紫外線,其中UV LED指的是發光波長400nm以下的LED,根據發光波長的不同,UV可進一步分為UVA(320-400nm)、UVB(280-320nm)以及UVC(200-280nm)三種,詳細分類如下:The so-called UV, also known as Ultraviolet, is also commonly known as ultraviolet rays. Among them, UV LED refers to LEDs with an emission wavelength below 400nm. Depending on the emission wavelength, UV can be further divided into UVA (320-400nm) and UVB (280-320nm ) And three kinds of UVC (200-280nm), detailed classification is as follows:

UVA:波長較長,波長介於320-400nm,可穿透雲層、玻璃進入室內及車內,UVA可穿透至皮膚真皮層,會使人被曬黑,其中,UVA可再被細分為UVA-2(320-340nm)與UVA-1(340-400nm)。UVA: The wavelength is longer, the wavelength is between 320-400nm, can penetrate the cloud layer, glass into the room and the car, UVA can penetrate to the dermis layer of the skin, will make people tanned, among them, UVA can be subdivided into UVA -2 (320-340nm) and UVA-1 (340-400nm).

UVB:波長居中,波長介於280-320nm,會被臭氧層所吸收,會引起曬傷及皮膚紅、腫、熱及痛,嚴重者還會起水泡或脫皮。UVB: The wavelength is in the middle, the wavelength is between 280-320nm, it will be absorbed by the ozone layer, it will cause sunburn and skin redness, swelling, heat and pain. In severe cases, it will blisters or peel.

UVC:波長介於100-280nm,但由於在200奈米以下的波長為真空紫外線波長,故可被空氣吸收,因此,UVC可穿越大氣層的波長介於200-280nm,UVC波長越短、越危險,但又由於可被臭氧層所阻隔,只有少量會到達地球表面。UVC: The wavelength is between 100-280nm, but because the wavelength below 200nm is the vacuum ultraviolet wavelength, it can be absorbed by the air. Therefore, the wavelength that UVC can pass through the atmosphere is between 200-280nm. The shorter the UVC wavelength, the more dangerous , But because it can be blocked by the ozone layer, only a small amount will reach the surface of the earth.

傳統習知最適合殺菌之UVC LED波長為254 nm,傳統一般使用來殺菌之燈源多為低壓汞燈的峰值波長(僅由燈的物理學決定)為253.7nm。然而在實際的使用上,位於一定範圍的UV波長之都具有殺菌作用,但是大多數的使用者認為265nm的波長是最佳的,因為此波長為DNA吸收曲線的峰值。所以,UVC是最適合用來殺菌的波段。Traditionally, the most suitable UVC LED for sterilization has a wavelength of 254 nm. The source of traditionally used sterilization lamps is mostly the peak wavelength of low-pressure mercury lamps (only determined by the physics of the lamp) of 253.7 nm. However, in actual use, all UV wavelengths in a certain range have a bactericidal effect, but most users think that the wavelength of 265nm is the best because this wavelength is the peak of the DNA absorption curve. Therefore, UVC is the most suitable band for sterilization.

從歷史上看,低壓汞燈曾是UV殺菌的唯一選擇。但是,《關於汞的水俁公約》自2017年8月16日起已對我國正式生效,公約要求,自2021年1月1日起,禁止生產和進出口所規定的含汞產品,而汞燈也在此列,因此,UVC LED就即為汞燈淘汰使用之替代物品。Historically, low-pressure mercury lamps were the only option for UV sterilization. However, the Minamata Convention on Mercury has officially entered into force in China since August 16, 2017. The Convention requires that from January 1, 2021, the production and import and export of mercury-containing products shall be prohibited. Lamps are also in this column, therefore, UVC LED is a substitute for mercury lamps.

然而,傳統的用於空氣殺菌機內部使用的UVC汞燈當做殺菌之光源,但是UVC汞燈有著環保問題以及使用壽命年限較短的問題,另外UVC汞燈多是屬於線光源,而非均勻的面光源,這樣在殺菌的效果上可能無法達到全面殺菌之功效。However, the traditional UVC mercury lamp used inside the air sterilization machine is used as a light source for sterilization. However, the UVC mercury lamp has environmental problems and a short service life. In addition, most UVC mercury lamps are linear light sources, not uniform. The surface light source may not achieve the full sterilization effect on the sterilization effect.

故,由上述可知,雖然UVC汞燈雖可有效用於殺菌消毒作用,但是仍然具有一定之缺點,且就UVC汞燈來說,價格高昂且使用壽命短,又會導致環境汙染。Therefore, as can be seen from the above, although the UVC mercury lamp can be effectively used for sterilization and disinfection, it still has certain shortcomings, and for the UVC mercury lamp, the price is high and the service life is short, and it will cause environmental pollution.

為此,如何改良傳統的UVC汞燈的殺菌方式,降低UVC汞燈的價格且延長其使用壽命,並降低導致環境汙染的問題,為本領域技術人員所欲解決的問題。Therefore, how to improve the sterilization method of the traditional UVC mercury lamp, reduce the price and extend the service life of the UVC mercury lamp, and reduce the problems that cause environmental pollution are the problems that those skilled in the art want to solve.

本創作之一目的,在於提供一種UVC發光燈管,透過使用UVC LED模組取代傳統的UVC汞燈燈管,並且透過於燈管表面鍍一金屬,使其產生大角度的光源,並且提升光均勻性。One of the purposes of this creation is to provide a UVC light-emitting tube. By using the UVC LED module to replace the traditional UVC mercury lamp tube, and by plating a metal on the surface of the tube, it generates a large-angle light source and enhances the light. Uniformity.

針對上述之目的,本創作提供一種UVC發光燈管,其係包含一中空石英燈管,設置一鋁反射層,及一發光模組,其係設置於該中空石英燈管之一內部,該發光模組係包含,一電路板,該電路板之電性連接二電極,至少一基板,其係設置於該電路板之上,並電性連接該二電極;至少一UVC覆晶晶片,其係發出波長200-280nm,其係設置於該至少一基板之上並電性連接該至少一基板,及至少一石英封裝件,其係封設於該至少一UVC覆晶晶片之上,並於兩者中間設有一空間層;其中,該鋁反射層相對於該至少一UVC覆晶晶片之一出光面設置。For the above purpose, the present invention provides a UVC light-emitting tube, which includes a hollow quartz tube, an aluminum reflective layer, and a light-emitting module, which is disposed inside one of the hollow quartz tubes, the light The module includes a circuit board, the circuit board is electrically connected to two electrodes, at least one substrate is disposed on the circuit board, and is electrically connected to the two electrodes; at least one UVC flip chip, which is The emission wavelength is 200-280 nm, which is arranged on the at least one substrate and is electrically connected to the at least one substrate, and at least one quartz package, which is sealed on the at least one UVC flip chip, and There is a space layer in the middle; wherein, the aluminum reflective layer is disposed relative to a light emitting surface of the at least one UVC flip chip.

本創作提供一實施例,其中該UVC覆晶晶片其係包含一藍寶石基板,一第一半導體層,其係設置於該藍寶石基板之下,一發光層,其係設置於該第一半導體層之下,該發光層係選擇於氮化鋁鎵、氮化鎵或上述之組合之其中之一,及一第二半導體層,其係設置於該發光層之下。This creation provides an embodiment, wherein the UVC flip chip includes a sapphire substrate, a first semiconductor layer, which is disposed under the sapphire substrate, and a light emitting layer, which is disposed on the first semiconductor layer Next, the light-emitting layer is selected from one of aluminum gallium nitride, gallium nitride, or a combination of the foregoing, and a second semiconductor layer is disposed under the light-emitting layer.

本創作提供一實施例,其中該至少一基板係為陶瓷基板或矽基板。The present invention provides an embodiment, wherein the at least one substrate is a ceramic substrate or a silicon substrate.

本創作提供一實施例,其中更包含一N電極,該N電極設置於該第一半導體層之下。The present invention provides an embodiment, which further includes an N electrode disposed under the first semiconductor layer.

本創作提供一實施例,其中更包含一P電極,該P電極係設置於該第二半導體層之下。The present invention provides an embodiment, which further includes a P electrode disposed under the second semiconductor layer.

為使 貴審查委員對本創作之特徵及所達成之功效有更進一步之瞭解與認識,謹佐以較佳之實施例及配合詳細之說明,說明如後:In order to make your reviewer have a better understanding and understanding of the characteristics of the creation and the effects achieved, I would like to use the preferred embodiments and detailed explanations as follows:

傳統的用於空氣殺菌機內部使用的UVC汞燈當做殺菌之光源,但是UVC汞燈有著環保問題以及使用壽命年限較短的問題,另外UVC汞燈多是屬於線光源,而非均勻的面光源,這樣在殺菌的效果上可能無法達到全面殺菌之功效。The traditional UVC mercury lamp used inside the air sterilization machine is used as a light source for sterilization, but the UVC mercury lamp has environmental problems and a short service life. In addition, most UVC mercury lamps are linear light sources, rather than uniform surface light sources. , In this way, the effect of sterilization may not be able to achieve full sterilization.

本創作在於提供一種UVC發光燈管,透過使用UVC LED模組取代傳統的UVC汞燈燈管,並且透過於燈管表面鍍一金屬,使其產生大角度的光源,並且提升光均勻性。This creation is to provide a UVC light-emitting tube. By using the UVC LED module to replace the traditional UVC mercury lamp tube, and by plating a metal on the surface of the tube, it generates a large-angle light source and improves the light uniformity.

在下文中,將藉由圖式來說明本創作之各種實施例來詳細描述本創作。然而本創作之概念可能以許多不同型式來體現,且不應解釋為限於本文中所闡述之例式性實施例。In the following, the present creation will be described in detail by illustrating various embodiments of the present creation by the drawings. However, the concept of this creation may be embodied in many different forms, and should not be interpreted as being limited to the exemplary embodiments set forth herein.

首先,請參閱第1A圖,其為本創作之一實施例之燈管結構示意圖,如圖所示,本創作之一UVC發光燈管1,其結構包含一中空石英燈管10、一發光模組20,該發光模組20中包含一電路板22、一空間層23、至少一基板24、至少一UVC覆晶晶片26以及至少一石英封裝件28。First, please refer to FIG. 1A, which is a schematic structural view of a lamp tube according to an embodiment of the creation. As shown in the figure, the structure of a UVC light-emitting lamp 1 of this creation includes a hollow quartz lamp tube 10 and a light-emitting mold. Group 20, the light emitting module 20 includes a circuit board 22, a space layer 23, at least one substrate 24, at least one UVC flip chip 26 and at least one quartz package 28.

接著,請一併參閱第1B圖,其為本創作之一實施例之燈管俯視示意圖,如圖所示,本創作之該UVC發光燈管1其係包含該中空石英燈管10,該中空石英燈管10設置有一鋁反射層12,而該發光模組20係設置於該中空石英燈管10之一內部,該發光模組20內之該的電路板22電性連接二電極21,該電路板22上設置有該至少一基板24,該至少一基板24並電性連接至該二電極21,該至少一基板上方設有該至少一UVC覆晶晶片26,該至少一UVC覆晶晶片26其係設置於該至少一基板上24且電性連接至該至少一基板24,其中,該至少一UVC覆晶晶片26係可發出波長範圍200至280nm。Next, please also refer to FIG. 1B, which is a schematic top view of a lamp tube according to an embodiment of the creation. As shown in the figure, the UVC light-emitting lamp tube 1 of this creation includes the hollow quartz lamp tube 10, which is hollow The quartz lamp tube 10 is provided with an aluminum reflective layer 12, and the light emitting module 20 is disposed inside one of the hollow quartz lamp tubes 10. The circuit board 22 in the light emitting module 20 is electrically connected to the two electrodes 21. The circuit board 22 is provided with the at least one substrate 24, the at least one substrate 24 is electrically connected to the two electrodes 21, the at least one UVC flip chip 26 is disposed above the at least one substrate, the at least one UVC flip chip 26 is disposed on the at least one substrate 24 and electrically connected to the at least one substrate 24, wherein the at least one UVC flip chip 26 can emit a wavelength range of 200 to 280 nm.

接續上述,該至少一石英封裝件28係封設該至少一UVC覆晶晶片26且於該至少一石英封裝件28與該至少一UVC覆晶晶片26中間設有該空間層23,其中,上述之該鋁反射層12相對於該至少一UVC覆晶晶片26之一出光面OL設置。Following the above, the at least one quartz package 28 encapsulates the at least one UVC flip chip 26 and the space layer 23 is provided between the at least one quartz package 28 and the at least one UVC flip chip 26, wherein, the above The aluminum reflective layer 12 is disposed relative to a light emitting surface OL of the at least one UVC flip chip 26.

其中,請參考第2圖,其為本創作之一實施例之之UVC覆晶晶片結構示意圖,如圖所示,上述之該至少一UVC覆晶晶片26係包含一藍寶石基板262、一第一半導體層264、一發光層266以及一第二半導體層268,該第一半導體層264係設置於該藍寶石基板262之下,該發光層266係設置於該第一半導體層264之下,其中,該發光層266係選擇於氮化鋁鎵、氮化鎵或上述之組合之其中之一,而該第二半導體層268係設置於該發光層266之下,更進一步,該至少一UVC覆晶晶片266結構內更包含一N電極261,該N電極261係設置於該第一半導體層264之下,另外更包含一P電極263,該P電極263係設置於該第二半導體層268之下,該至少一UVC覆晶晶片266透過該N電極261及該P電極263分別電性連接該至少一基板24,透過該至少一基板24電性連接至該電路板之22該二電極21,使該至少一UVC覆晶晶片266可透過電力發出UV光源,達到殺菌之效果。Among them, please refer to FIG. 2, which is a schematic structural diagram of a UVC flip chip according to an embodiment of the creation. As shown in the figure, the at least one UVC flip chip 26 described above includes a sapphire substrate 262 and a first A semiconductor layer 264, a light-emitting layer 266, and a second semiconductor layer 268, the first semiconductor layer 264 is disposed under the sapphire substrate 262, the light-emitting layer 266 is disposed under the first semiconductor layer 264, wherein, The light-emitting layer 266 is selected from one of aluminum gallium nitride, gallium nitride, or a combination thereof, and the second semiconductor layer 268 is disposed under the light-emitting layer 266, and further, the at least one UVC flip chip The chip 266 structure further includes an N electrode 261 disposed under the first semiconductor layer 264, and further includes a P electrode 263 disposed under the second semiconductor layer 268 , The at least one UVC flip chip 266 is electrically connected to the at least one substrate 24 through the N electrode 261 and the P electrode 263, and is electrically connected to the two electrodes 21 of the circuit board 22 through the at least one substrate 24, so that The at least one UVC flip chip 266 can emit UV light source through electric power to achieve the effect of sterilization.

本創作根據上述之技術特徵,列舉下列一實際範例,以期清楚闡述本創作之UVC發光燈管結構,透過該中空石英燈管10上方設置一鋁反射層12後,將該發光模組20設置於該中空石英燈管10內,透過該發光模組20上之該至少一UVC覆晶晶片26可以發出具有200nm至280nm波長之UV光源,而該中空石英燈管10所設置之該鋁反射層12,設置之位置位於該發光面OL之相對面,此時,所發射之一光源L投射到該鋁反射層12後,該光源L再通過該鋁反射層12後,會產生一穿透光源L1以及一反射光源L2,透過穿透該鋁反射層12的該穿透光源L1,使該穿透光源L1與該鋁反射層12產生角度,由於該角度θ之影響,可使本創作之該UVC燈管透過該穿透光源L1使其轉換成為面光源,有別於習知UVC汞燈的線光源滅菌做用。Based on the above technical features, this creation enumerates a practical example below in order to clearly explain the structure of the UVC light-emitting lamp tube of this creation. After an aluminum reflective layer 12 is provided on the hollow quartz lamp tube 10, the light-emitting module 20 is placed on In the hollow quartz lamp tube 10, the at least one UVC flip chip 26 on the light emitting module 20 can emit a UV light source with a wavelength of 200nm to 280nm, and the aluminum reflective layer 12 provided in the hollow quartz lamp tube 10 , The set position is located on the opposite surface of the light-emitting surface OL, at this time, after one of the emitted light sources L is projected onto the aluminum reflective layer 12, the light source L passes through the aluminum reflective layer 12 again, will produce a penetrating light source L1 And a reflective light source L2, through the penetrating light source L1 penetrating through the aluminum reflective layer 12, the penetrating light source L1 and the aluminum reflective layer 12 are angled, and due to the influence of the angle θ, the UVC of the present creation can be made The lamp tube is converted into a surface light source through the penetrating light source L1, which is different from the conventional light source sterilization of the UVC mercury lamp.

透過UVC之片面光源,可使該滅菌之效用更加全面,且由於該發光模組20係使用該UVC覆晶晶片26,有別於習知的燈泡結構,不易被破壞,且體積較小,不容易造成環境保護問題,且該UVC覆晶晶片26之時用壽命較長,可以避免頻繁更換燈泡導致耗材成本增加之問題。Through the one-sided light source of UVC, the sterilization effect can be more comprehensive, and because the light-emitting module 20 uses the UVC flip chip 26, unlike the conventional bulb structure, it is not easy to be damaged, and the volume is small, not It is easy to cause environmental protection problems, and the UVC flip chip 26 has a long service life, which can avoid the problem of increasing the cost of consumables due to frequent lamp replacement.

以上所述之實施例,本創作之UVC燈管結構,其係一種UVC發光燈管,透過使用UVC LED模組取代傳統的UVC汞燈燈管,並且透過於燈管表面鍍一金屬,使其產生大角度的光源,並且提升光均勻性。The above-mentioned embodiment, the UVC lamp tube structure of this creation is a kind of UVC luminous lamp tube. By using the UVC LED module to replace the traditional UVC mercury lamp tube, and by plating a metal on the surface of the lamp tube to make it Produces a light source with a large angle and improves light uniformity.

惟以上所述者,僅為本創作之較佳實施例而已,並非用來限定本創作實施之範圍,舉凡依本創作申請專利範圍所述之形狀、構造、特徵及精神所為之均等變化與修飾,均應包括於本創作之申請專利範圍內。However, the above are only the preferred embodiments of this creation, and are not used to limit the scope of the implementation of this creation. Any changes and modifications based on the shape, structure, characteristics and spirit described in the scope of the patent application for this creation , Should be included in the scope of patent applications for this creation.

1:UVC燈管 10:中空石英燈管 12:鋁反射層 20:發光模組 21:電極 22:電路板 23:空間層 24:基板 26:UVC覆晶晶片 261:N電極 262:藍寶石基板 263:P電極 264:第一半導體層 266:發光層 268:第二半導體層 28:石英封裝件 OL:發光面 L:光源 L1:穿透光源 L2:反射光源 1: UVC lamp 10: Hollow quartz tube 12: Aluminum reflective layer 20: Light emitting module 21: electrode 22: circuit board 23: Space layer 24: substrate 26: UVC flip chip 261: N electrode 262: Sapphire substrate 263: P electrode 264: first semiconductor layer 266: Luminous layer 268: Second semiconductor layer 28: Quartz package OL: luminous surface L: light source L1: penetrating light source L2: reflective light source

第1A圖:其為本創作之一實施例之燈管結構示意圖; 第1B圖:其為本創作之一實施例之燈管俯視示意圖;以及 第2圖:其為本創作之一實施例之之UVC覆晶晶片結構示意圖。 Figure 1A: This is a schematic diagram of the lamp structure according to one embodiment of the creation; Figure 1B: This is a schematic top view of a lamp according to an embodiment of the creation; and Figure 2: This is a schematic diagram of the structure of a UVC flip chip as an embodiment of the creation.

1:UVC燈管 1: UVC lamp

10:中空石英燈管 10: Hollow quartz tube

12:鋁反射層 12: Aluminum reflective layer

20:發光模組 20: Light emitting module

22:電路板 22: circuit board

23:空間層 23: Space layer

24:基板 24: substrate

26:UVC覆晶晶片 26: UVC flip chip

261:N電極 261: N electrode

263:P電極 263: P electrode

28:石英封裝件 28: Quartz package

OL:發光面 OL: luminous surface

L:光源 L: light source

L1:穿透光源 L1: penetrating light source

L2:反射光源 L2: reflective light source

Claims (5)

一種UVC發光燈管,其係包含: 一中空石英燈管,設置一鋁反射層;及 一發光模組,其係設置於該中空石英燈管之一內部,該發光模組係包含: 一電路板,該電路板之電性連接二電極; 至少一基板,其係設置於該電路板之上,並電性連接該二電極; 至少一UVC覆晶晶片,其係發出波長200-280nm,其係設置於該至少一基板之上並電性連接該至少一基板;及 至少一石英封裝件,其係封設於該至少一UVC覆晶晶片之上,並於兩者中間設有一空間層; 其中,該鋁反射層相對於該至少一UVC覆晶晶片之一出光面設置。 A UVC luminous tube, which includes: A hollow quartz lamp tube with an aluminum reflective layer; and A light-emitting module is disposed inside one of the hollow quartz lamp tubes. The light-emitting module includes: A circuit board, the circuit board is electrically connected to two electrodes; At least one substrate, which is disposed on the circuit board and electrically connected to the two electrodes; At least one UVC flip chip, which emits a wavelength of 200-280 nm, which is disposed on the at least one substrate and electrically connected to the at least one substrate; and At least one quartz package, which is sealed on the at least one UVC flip chip, and a space layer is provided between the two; Wherein, the aluminum reflective layer is disposed relative to a light emitting surface of the at least one UVC flip chip. 如請求項1所述之UVC發光燈管,其中該UVC覆晶晶片其係包含: 一藍寶石基板; 一第一半導體層,其係設置於該藍寶石基板之下; 一發光層,其係設置於該第一半導體層之下,該發光層係選擇於氮化鋁鎵、氮化鎵或上述之組合之其中之一;及 一第二半導體層,其係設置於該發光層之下。 The UVC light emitting tube according to claim 1, wherein the UVC flip chip includes: A sapphire substrate; A first semiconductor layer disposed under the sapphire substrate; A light-emitting layer disposed under the first semiconductor layer, the light-emitting layer is selected from one of aluminum gallium nitride, gallium nitride, or a combination of the foregoing; and A second semiconductor layer is disposed under the light-emitting layer. 如請求項1所述之UVC發光燈管,其中該至少一基板係為陶瓷基板或矽基板。The UVC light emitting tube according to claim 1, wherein the at least one substrate is a ceramic substrate or a silicon substrate. 如請求項2所述之UVC發光燈管,其中更包含一N電極,該N電極設置於該第一半導體層之下。The UVC light emitting tube according to claim 2, further comprising an N electrode, the N electrode is disposed under the first semiconductor layer. 如請求項2所述之UVC發光燈管,其中更包含一P電極,該P電極係設置於該第二半導體層之下。The UVC light emitting tube according to claim 2, further comprising a P electrode, the P electrode is disposed under the second semiconductor layer.
TW109202155U 2020-02-26 2020-02-26 UVC lighting lamp TWM595726U (en)

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