TWM593131U - Heat dissipation structure of bare crystal (die) - Google Patents

Heat dissipation structure of bare crystal (die) Download PDF

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Publication number
TWM593131U
TWM593131U TW109200081U TW109200081U TWM593131U TW M593131 U TWM593131 U TW M593131U TW 109200081 U TW109200081 U TW 109200081U TW 109200081 U TW109200081 U TW 109200081U TW M593131 U TWM593131 U TW M593131U
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Taiwan
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heat dissipation
die
contact portion
dissipation structure
bare crystal
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TW109200081U
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Chinese (zh)
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劉漢敏
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大陸商深圳興奇宏科技有限公司
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Publication of TWM593131U publication Critical patent/TWM593131U/en

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Abstract

一種裸晶的散熱結構,係包括一散熱單元及一裸晶,該散熱單元具有一第一側及一第二側,於該第二側凸設形成一接觸部,該接觸部一端係呈一微凸曲面態樣,該裸晶具有一上表面及一下表面,所述接觸部一端與該上表面相接觸貼合,並該上表面係呈一微凹曲面態樣以與所述接觸部之微凸曲面態樣相匹配。A bare crystal heat dissipation structure includes a heat dissipation unit and a die, the heat dissipation unit has a first side and a second side, a contact portion is protrudingly formed on the second side, and one end of the contact portion is a A slightly convex curved surface, the bare crystal has an upper surface and a lower surface, one end of the contact portion is in contact with the upper surface, and the upper surface is in a slightly concave curved surface shape to contact the contact portion Match the appearance of slightly convex surfaces.

Description

裸晶的散熱結構Heat dissipation structure of die

本創作是有關於一種裸晶的散熱結構,尤指一種可大幅減少熱阻問題並有效提升散熱效能之裸晶的散熱結構。This creation is about a heat dissipation structure of a die, especially a heat dissipation structure of a die that can greatly reduce the thermal resistance problem and effectively improve the heat dissipation performance.

半導體積體電路工業已經經歷了快速增長,半導體積體電路材料和設計中的技術進展已經產生了多代半導體積體電路,每一代半導體積體電路都比前一代半導體積體電路具有更小和更複雜的電路,然而,這些進展也已增加處理和製造半導體積體電路的複雜度。 傳統的晶片係包括裸晶(Die)及封裝殼體,通常裸晶與封裝殼體利用銦焊接方式或其他結合方式將其結合,然而,該結構設計會導致裸晶與封裝殼體的界面熱阻非常大,因此,近年來隨著功率變高及熱流密度變大,為了有效提升晶片的散熱效能,晶片廠於設計上取消了包覆晶片的封裝殼體元件,想藉以減少封裝殼體材料本體的熱傳導熱阻及界面材料的熱阻,始其成為裸晶、導熱膏及散熱器的結構之設計模式,但由於此種設計的裸晶矽材料的平面度、散熱器的重量、扣合力等要求相對較高,當裸晶於高溫工作時會產生形變,使得裸晶表面呈現一微凹曲面形狀,導致與散熱器相接觸貼合時會有一間隙而仍然存在熱阻問題,使得裸晶的熱量無法被散熱器迅速帶離,造成散熱效能的提升也非常有限。 以上所述,習知具有下列之缺點: 1.嚴重的熱阻問題; 2.散熱效能較差。 是以,要如何解決上述習用之問題與缺失,即為本案之創作人與從事此行業之相關廠商所亟欲研究改善之方向所在者。 The semiconductor integrated circuit industry has experienced rapid growth, and the technological advances in semiconductor integrated circuit materials and design have produced multiple generations of semiconductor integrated circuits, each of which has a smaller size than the previous generation of semiconductor integrated circuits. More complex circuits, however, these advances have also increased the complexity of processing and manufacturing semiconductor integrated circuits. The traditional wafer system includes a die and a package case. Usually, the die and the package case are combined by indium welding or other bonding methods. However, this structural design will cause the interface heat between the die and the package case The resistance is very large. Therefore, in recent years, as the power has increased and the heat flux density has become larger, in order to effectively improve the heat dissipation efficiency of the chip, the chip factory has eliminated the package shell components covering the chip in the design, and wants to reduce the package shell material The thermal conductivity of the body and the thermal resistance of the interface material have become the design mode of the structure of the die, thermal paste and heat sink. However, due to the flatness of the bare silicon material of this design, the weight of the heat sink, and the fastening force The requirements are relatively high. When the die is operated at high temperature, it will deform, causing the surface of the die to exhibit a slightly concave curved shape, resulting in a gap when contacting with the heat sink and still having thermal resistance problems, making the die The heat cannot be quickly taken away by the radiator, resulting in very limited improvement in heat dissipation efficiency. As mentioned above, conventional knowledge has the following disadvantages: 1. Serious thermal resistance problem; 2. Poor cooling efficiency. Therefore, how to solve the above-mentioned problems and deficiencies in practice is the one where the creators of this case and the relevant manufacturers engaged in this industry are desperate to study the direction of improvement.

爰此,為有效解決上述之問題,本創作之主要目的在於提供一種大幅減少熱阻問題之裸晶的散熱結構。 本創作之次要目的,在於提供一種大幅提升散熱效能之裸晶的散熱結構。 為達上述目的,本創作係提供一種裸晶的散熱結構,係包括一散熱單元及一裸晶,該散熱單元具有一第一側及一第二側,於該第二側凸設形成一接觸部(即,接觸部210形成於散熱單元第二側21凸出處的表面上),該接觸部一端係呈一微凸曲面態樣,該裸晶具有一上表面及一下表面,所述接觸部一端與該上表面相接觸貼合,並該上表面係呈一微凹曲面態樣以與所述接觸部之微凸曲面態樣相匹配。 透過本創作此結構的設計,當該裸晶開始工作時會產生熱量,使得該裸晶在高溫狀態下其上表面會產生形變而呈現一微凹曲面態樣,藉由該散熱單元的接觸部一端之結構係呈一微凸曲面態樣,令該裸晶的上表面得以完全與該接觸部相接觸貼附結合,有效降低熱阻問題,進而達到該裸晶上的熱量可迅速被該散熱單元帶離,大幅提升散熱效能。 Therefore, in order to effectively solve the above problems, the main purpose of this creation is to provide a heat dissipation structure of bare crystals that greatly reduces the problem of thermal resistance. The secondary purpose of this creation is to provide a heat dissipation structure with bare die that greatly improves the heat dissipation efficiency. In order to achieve the above purpose, the present invention provides a heat dissipation structure of a die, which includes a heat dissipation unit and a die, the heat dissipation unit has a first side and a second side, and a contact is protruded on the second side Part (that is, the contact part 210 is formed on the surface of the second side 21 of the heat dissipation unit), one end of the contact part is in the form of a slightly convex curved surface, the die has an upper surface and a lower surface, the contact part One end is in contact with and attached to the upper surface, and the upper surface is in a slightly concave curved surface shape to match the slightly convex curved surface shape of the contact portion. Through the design of this structure, heat will be generated when the die starts to work, so that the upper surface of the die will be deformed under a high temperature state and present a slightly concave curved surface shape, through the contact portion of the heat dissipation unit The structure at one end is a slightly convex curved surface, so that the upper surface of the die can be fully contacted with the contact part, effectively reducing the thermal resistance problem, and then the heat on the die can be quickly dissipated by the heat The unit is removed, greatly improving the heat dissipation efficiency.

本創作之上述目的及其結構與功能上的特性,將依據所附圖式之較佳實施例予以說明。 請參閱第1、2圖,係為本創作之裸晶的散熱結構之分解圖及放大示意圖,如圖所示,一種裸晶的散熱結構,係包括一散熱單元2及一裸晶3,該散熱單元2係為一散熱器、散熱基座、均溫板等具散熱之元件,其具有一第一側20及一第二側21,於該第一側20上形成有複數散熱鰭片200,於該第二側21凸設形成一接觸部210(即,接觸部210形成於散熱單元第二側21凸出處的表面上),該接觸部210一端係呈一微凸曲面態樣,於本實施例中,所述接觸部210與所述散熱單元2係以一體成形做說明,但並不限於此,使用者也可依照使用需求令該接觸部210及該散熱單元2為非一體成形,並且該接觸部210與該散熱單元2係選擇由銀、銅、鋁、鐵或其他高導熱材料所製成,該接觸部210與該散熱單元2可以是相同材質或不同材質,合先敘明。 所述裸晶3具有一上表面30及一下表面31,所述接觸部210一端與該上表面30相接觸貼合,並該上表面30係呈一微凹曲面態樣而得以與所述接觸部210之微凸曲面態樣相匹配,該下表面31則對應裝設於一基板4上。 續請參閱第2圖,本創作之散熱單元2及裸晶3的接觸面之間更形成有一微間隙(圖中未示),該微間隙對應塗佈設置一導熱塗層32,該導熱塗層32係為一導熱膏(Thermal grease)、導熱膠、導熱pad,而該導熱塗層32係用以更緊密填滿該微間隙以為了避免形成前述微間隙的產生而導致熱阻的產生。 因此,透過本創作此結構的設計,當該裸晶3開始工作時會產生熱量使得該裸晶3逐漸升溫,而由於裸晶3本身的材質及其製造過程等因素,會使該裸晶3在高溫狀態下產生形變,即,該裸晶3上表面30的中央處產生形變逐漸下凹而呈現一微凹曲面態樣,此時,透過該散熱單元2的接觸部210一端之結構係呈一微凸曲面態樣,而微凸曲面態樣與微凹曲面態樣的形狀係完全相匹配,得以令該接觸部210與該裸晶3的上表面30完全相接觸貼附,如此一來,可改善習知散熱單元的接觸界面呈平面狀與形變後的裸晶上表面之間相接觸貼合時產生的間隙而導致熱阻問題,本創作有效改善習知結構的熱阻問題,進而達到該裸晶3上的熱量可被該散熱單元2迅速帶離,大幅提升散熱效能。 需注意的是,由於該裸晶3上表面30所產生的形變(微凹曲面態樣)非常微小,其形變量通常以微米( )為單位量級,因此形變的彎曲弧度係介於50 ~70 ,而本創作所表示之圖式係以放大數倍進行說明,如此得以更加清楚明瞭本創作之結構設計,該散熱單元2接觸部210的微凸曲面態樣之彎曲弧度也是相當微小,另外,由於為微米( )量級的彎曲弧度,故該散熱單元2之第二側21係通常選擇利用研磨加工方式令該接觸部210呈一微凸曲面態樣,然而,微凸曲面態樣的製造方式並不限於研磨加工,也可利用CNC加工、刨削加工或其他加工方式,合先敘明。 以上所述,本創作相較於習知具有下列優點: 1.大幅減少熱阻問題; 2.大幅提升散熱效能。 以上已將本創作做一詳細說明,惟以上所述者,僅為本創作之一較佳實施例而已,當不能限定本創作實施之範圍,即凡依本創作申請範圍所作之均等變化與修飾等,皆應仍屬本創作之專利涵蓋範圍。 The above-mentioned object of this creation and its structural and functional characteristics will be explained based on the preferred embodiments of the attached drawings. Please refer to Figures 1 and 2 for an exploded view and an enlarged schematic diagram of the heat dissipation structure of the bare crystal for the creation. As shown in the figure, a heat dissipation structure of the bare crystal includes a heat dissipation unit 2 and a bare crystal 3. The heat dissipation unit 2 is a heat sink, a heat dissipation base, a temperature equalizing plate and other components with heat dissipation, and has a first side 20 and a second side 21 on which a plurality of heat dissipation fins 200 are formed , A contact portion 210 is protrudingly formed on the second side 21 (ie, the contact portion 210 is formed on the surface of the protrusion of the second side 21 of the heat dissipation unit), and one end of the contact portion 210 is in the form of a slightly convex curved surface. In this embodiment, the contact part 210 and the heat dissipation unit 2 are described as integrally formed, but it is not limited to this, and the user may also make the contact part 210 and the heat dissipation unit 2 non-integrally formed according to usage requirements , And the contact part 210 and the heat dissipation unit 2 are made of silver, copper, aluminum, iron or other high thermal conductivity materials. The contact part 210 and the heat dissipation unit 2 may be made of the same material or different materials. Bright. The die 3 has an upper surface 30 and a lower surface 31, one end of the contact portion 210 is in contact with the upper surface 30, and the upper surface 30 is in a slightly concave curved surface to be in contact with the surface The micro-convex surface of the portion 210 matches, and the lower surface 31 is correspondingly mounted on a substrate 4. Please refer to FIG. 2 again. A micro gap (not shown in the figure) is further formed between the contact surface of the heat dissipation unit 2 and the die 3 of this creation. The micro gap corresponds to a thermally conductive coating 32 coated thereon. The layer 32 is a thermal grease, a thermal paste, and a thermal pad, and the thermally conductive coating 32 is used to more closely fill the micro gap to avoid the formation of the aforementioned micro gap to cause thermal resistance. Therefore, through the design of this structure, when the die 3 starts to work, heat will be generated to gradually increase the temperature of the die 3, and due to the material and manufacturing process of the die 3, the die 3 The deformation occurs at a high temperature, that is, the deformation at the center of the upper surface 30 of the die 3 gradually sags down to assume a slightly concave curved surface. At this time, the structure through the end of the contact portion 210 of the heat dissipation unit 2 is A slightly convex curved surface shape, and the shape of the slightly convex curved surface shape and the slightly concave curved surface shape are completely matched, so that the contact portion 210 and the upper surface 30 of the die 3 are completely in contact with and attached, so , Can improve the gap between the contact surface of the conventional heat dissipation unit and the upper surface of the deformed die when contacting and bonding, resulting in thermal resistance problems. This creation effectively improves the thermal resistance problem of the conventional structure, and The heat reaching the die 3 can be quickly taken away by the heat dissipation unit 2 to greatly improve the heat dissipation efficiency. It should be noted that since the deformation (micro concave surface shape) generated on the upper surface 30 of the die 3 is very small, the deformation variable is usually in the order of microns ( ) as a unit, so the bending curvature of the deformation is between 50 ~70 , and the drawings shown in this creation are explained by magnification, so that the structural design of this creation can be more clearly understood, and the curved curvature of the slightly convex surface of the contact portion 210 of the heat dissipation unit 2 is also quite In addition, because of the bending curvature of the order of micrometer ( ), the second side 21 of the heat dissipation unit 2 usually chooses to use a grinding process to make the contact portion 210 assume a slightly convex curved surface, however, the slightly convex The manufacturing method of the curved surface is not limited to grinding, but can also use CNC processing, planing processing or other processing methods, which will be described first. As mentioned above, this creation has the following advantages over conventional ones: 1. Significantly reduces thermal resistance issues; 2. Significantly improves heat dissipation performance. The above has made a detailed description of this creation, but the above is only one of the preferred embodiments of this creation, but the scope of the implementation of this creation cannot be limited, that is, any equal changes and modifications made according to the scope of this creative application Etc., should still fall within the scope of the patent of this creation.

2:散熱單元 20:第一側 200:散熱鰭片 21:第二側 210:接觸部 3:裸晶 30:上表面 31:下表面 32:導熱塗層 4:基板 2: cooling unit 20: First side 200: cooling fins 21: Second side 210: contact 3: die 30: upper surface 31: Lower surface 32: Thermally conductive coating 4: substrate

第1圖係為本創作裸晶的散熱結構之分解圖; 第2圖係為本創作裸晶的散熱結構之放大示意圖。 Figure 1 is an exploded view of the heat dissipation structure of the bare crystal creation; Figure 2 is an enlarged schematic diagram of the heat dissipation structure of the bare die.

2:散熱單元 2: cooling unit

20:第一側 20: First side

200:散熱鰭片 200: cooling fins

21:第二側 21: Second side

210:接觸部 210: contact

3:裸晶 3: die

30:上表面 30: upper surface

31:下表面 31: Lower surface

4:基板 4: substrate

Claims (7)

一種裸晶的散熱結構,係包括: 一散熱單元,具有一第一側及一第二側,於該第二側凸設形成一接觸部,該接觸部一端係呈一微凸曲面;及 一裸晶,具有一上表面及一下表面,所述接觸部一端與該上表面相接觸貼合,並該上表面係呈一微凹曲面以與所述接觸部之微凸曲面相匹配。 A bare crystal heat dissipation structure includes: A heat dissipation unit having a first side and a second side, a contact portion is protrudingly formed on the second side, and one end of the contact portion is a slightly convex curved surface; and A die has an upper surface and a lower surface. One end of the contact portion is in contact with the upper surface, and the upper surface is a slightly concave curved surface to match the slightly convex curved surface of the contact portion. 如請求項1所述之裸晶的散熱結構,其中所述散熱單元及裸晶間更形成一微間隙,該微間隙塗設一導熱塗層。The heat dissipation structure of the bare crystal according to claim 1, wherein a micro gap is further formed between the heat dissipation unit and the bare crystal, and the micro gap is coated with a thermal conductive coating. 如請求項1所述之裸晶的散熱結構,其中所述接觸部與所述散熱單元係為一體成形或非一體成形其中任一。The heat dissipation structure of the bare crystal according to claim 1, wherein the contact portion and the heat dissipation unit are formed integrally or non-integrally. 如請求項1所述之裸晶的散熱結構,其中所述微凸曲面及微凹曲面之彎曲弧度係介於0.05mm~0.07mm。The heat dissipation structure of the bare crystal according to claim 1, wherein the curved curvature of the micro convex surface and the micro concave surface is between 0.05 mm and 0.07 mm. 如請求項1所述之裸晶的散熱結構,其中所述散熱單元更形成有複數散熱鰭片,該等散熱鰭片係間隔排列於所述第一側上。The heat dissipation structure of the bare crystal according to claim 1, wherein the heat dissipation unit is further formed with a plurality of heat dissipation fins, and the heat dissipation fins are arranged on the first side at intervals. 如請求項1所述之裸晶的散熱結構,其中所述裸晶之下表面係對應裝設於一基板上。The heat dissipation structure of the die according to claim 1, wherein the lower surface of the die is correspondingly mounted on a substrate. 如請求項1所述之裸晶的散熱結構,其中所述散熱單元之接觸部係透過研磨加工方式令該接觸部一端呈一微凸曲面。The heat dissipation structure of the bare crystal according to claim 1, wherein the contact portion of the heat dissipation unit is made to have a slightly convex curved surface by grinding.
TW109200081U 2020-01-03 2020-01-03 Heat dissipation structure of bare crystal (die) TWM593131U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI711135B (en) * 2020-01-03 2020-11-21 大陸商深圳興奇宏科技有限公司 Die heat dissipation structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI711135B (en) * 2020-01-03 2020-11-21 大陸商深圳興奇宏科技有限公司 Die heat dissipation structure

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