TWM590765U - Active RGB light-emitting diode pixel element - Google Patents

Active RGB light-emitting diode pixel element Download PDF

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TWM590765U
TWM590765U TW108212292U TW108212292U TWM590765U TW M590765 U TWM590765 U TW M590765U TW 108212292 U TW108212292 U TW 108212292U TW 108212292 U TW108212292 U TW 108212292U TW M590765 U TWM590765 U TW M590765U
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circuit
emitting diode
light
via holes
layer
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李蕙如
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李蕙如
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Abstract

一種主動式RGB發光二極體像素元件,其包括一基板、一電路層、多個電晶體晶片、一防焊層及多個發光二極體晶片,電路層包括一閘極電路、一源極電路及一汲極電路,電晶體晶片具有一閘極端、一源極端及一汲極端,閘極端及源極端分別貼裝於閘極電路及源極電路,防焊層覆蓋基板、電路層及電晶體晶片,防焊層具有多個第一導通孔及多個第二導通孔,第一、第二導通孔內形成有導電層。各發光二極體晶片具有一N極電接點及一P極電接點,且第一導通孔的導電層電性連接於汲極端與N極電接點之間,第二導通孔的導電層則電性連接於汲極電路與P極電接點之間。An active RGB light-emitting diode pixel element includes a substrate, a circuit layer, a plurality of transistor chips, a solder mask, and a plurality of light-emitting diode chips. The circuit layer includes a gate circuit and a source electrode Circuit and a drain circuit, the transistor chip has a gate terminal, a source terminal and a drain terminal, the gate terminal and the source terminal are respectively mounted on the gate circuit and the source circuit, the solder mask covers the substrate, the circuit layer and the circuit In the crystal wafer, the solder resist layer has a plurality of first via holes and a plurality of second via holes. A conductive layer is formed in the first and second via holes. Each light-emitting diode chip has an N-pole electrical contact and a P-pole electrical contact, and the conductive layer of the first via hole is electrically connected between the drain terminal and the N-pole electrical contact, and the conduction of the second via hole The layer is electrically connected between the drain circuit and the P-electrode.

Description

主動式RGB發光二極體像素元件Active RGB light-emitting diode pixel element

本新型是關於一種發光二極體像素元件,特別是一種主動式發光二極體像素元件。 The invention relates to a light-emitting diode pixel element, in particular to an active light-emitting diode pixel element.

隨著微發光二極體(mini LED)技術的逐漸發展,使得發光二極體顯示器(LED display)的發展前景備受期待。 With the gradual development of mini LED technology, the development prospects of LED displays are highly anticipated.

其中,發光二極體顯示器依據驅動方式的差異可分為被動式驅動及主動式驅動兩類。被動式驅動方式需要在基板上配置行列矩陣式的掃描電極和資料電極,並直接運用掃描訊號來驅動各畫數內的發光二極體晶片,但由於掃描電極與資料電極採行列矩陣式方式排列,電路配置複雜,導致被動式發光二極體像素元件的層數通常達到六層、八層或更多層電路,導致加工成本上升。 Among them, the light emitting diode display can be divided into two types of passive driving and active driving according to the difference of driving methods. The passive driving method needs to arrange row and column matrix scanning electrodes and data electrodes on the substrate, and directly use the scanning signal to drive the light-emitting diode chips in each frame, but because the scanning electrodes and data electrodes are arranged in a row and matrix matrix, The circuit configuration is complicated, resulting in the number of layers of the passive light-emitting diode pixel element usually reaching six, eight or more layers of circuits, resulting in increased processing costs.

另一方面,主動式驅動方式則是直接在玻璃或聚醯亞胺(PI)基板上通過濺鍍方式形成多個薄膜電晶體,而可對各畫素內的發光二極體晶片各別控制,雖然主動式發光二極體顯示器通過設置薄膜電晶體的方式降低載板的層數,但以濺鍍方式形成薄膜電晶體的製程費用仍然較高,而玻璃基材有易碎的特性,聚醯亞胺基板則成本較高,使得現有的主動式發光二極體顯示器雖然較為輕薄,但仍有成本較高等其他缺失。目前,以主動式驅動方式製作RGB發光二極體像素元件的概念已被提出,但上述問題仍然存在。 On the other hand, the active driving method is to directly form a plurality of thin film transistors on the glass or polyimide (PI) substrate by sputtering, and the light-emitting diode chips in each pixel can be individually controlled Although the active light-emitting diode display reduces the number of layers of the carrier board by setting the thin film transistor, the process cost of forming the thin film transistor by sputtering is still relatively high, and the glass substrate has a fragile characteristic The amide imine substrate has a relatively high cost, so that although the existing active light-emitting diode display is relatively thin and light, there are still other deficiencies such as higher cost. At present, the concept of producing RGB light-emitting diode pixel elements by active driving has been proposed, but the above problems still exist.

本新型的主要目的在於提供一種製作成本較低且容易製作的主動 式發光二極體像素元件。 The main purpose of the new model is to provide an initiative with low production cost and easy production Type light emitting diode pixel element.

為了達成上述及其他目的,本新型提供一種主動式RGB發光二極體像素元件,其包括一基板、一電路層、三個電晶體晶片、一防焊層及三個發光二極體晶片,電路層形成於基板上且包括一閘極電路、一源極電路、一汲極電路及多個對外電接點,該些對外電接點分別電性連接該閘極電路、該源極電路及該汲極電路,各電晶體晶片則具有一閘極端、一源極端及一汲極端,該些電晶體晶片的閘極端及源極端分別貼裝於電路層的閘極電路及源極電路並分別形成電性連接,防焊層覆蓋基板、電路層及電晶體晶片,且防焊層具有多個第一導通孔及多個第二導通孔,該些第一、第二導通孔內形成有導電層。各發光二極體晶片具有一N極電接點及一P極電接點,該些發光二極體晶片貼裝於防焊層上,且該些第一導通孔的導電層分別電性連接於該些電晶體晶片的汲極端與該些發光二極體晶片的N極電接點之間,該些第二導通孔的導電層則分別電性連接於汲極電路與該些發光二極體晶片的P極電接點之間,該些發光二極體晶片分別用以發出紅、綠、藍光。 In order to achieve the above and other objects, the present invention provides an active RGB light-emitting diode pixel element, which includes a substrate, a circuit layer, three transistor chips, a solder mask, and three light-emitting diode chips, circuits The layer is formed on the substrate and includes a gate circuit, a source circuit, a drain circuit and a plurality of external electrical contacts, the external electrical contacts are electrically connected to the gate circuit, the source circuit and the Drain circuit, each transistor chip has a gate terminal, a source terminal and a drain terminal, the gate terminal and the source terminal of these transistor chips are respectively mounted on the gate circuit and the source circuit of the circuit layer and formed separately Electrically connected, the solder mask layer covers the substrate, the circuit layer and the transistor chip, and the solder mask layer has a plurality of first via holes and a plurality of second via holes, and a conductive layer is formed in the first and second via holes . Each light-emitting diode chip has an N-pole electrical contact and a P-pole electrical contact, the light-emitting diode chips are mounted on the solder mask, and the conductive layers of the first via holes are electrically connected respectively Between the drain terminals of the transistor chips and the N-pole electrical contacts of the light-emitting diode chips, the conductive layers of the second via holes are electrically connected to the drain circuit and the light-emitting diodes, respectively Between the P-electrode contacts of the body chip, the light-emitting diode chips are used to emit red, green, and blue lights, respectively.

為了達成上述及其他目的,本新型提供一種主動式RGB發光二極體像素元件,其包括一基板、一電路層、三個電晶體晶片、一防焊層及三個發光二極體晶片,電路層形成於基板上且包括一閘極電路、一源極電路、一汲極電路及多個對外電接點,該些對外電接點分別電性連接該閘極電路、該源極電路及該汲極電路,各電晶體晶片則具有一閘極端、一源極端及一汲極端,該些電晶體晶片的閘極端及源極端分別貼裝於電路層的閘極電路及源極電路並分別形成電性連接,防焊層覆蓋基板、電路層及電晶體晶片,且防焊層具有多個第一導通孔及多個第二導通孔,該些第一、第二導通孔內形成有導電層。各發光 二極體晶片具有一P極電接點及一N極電接點,該些發光二極體晶片貼裝於防焊層上,且該些第一導通孔的導電層分別電性連接於該些電晶體晶片的汲極端與該些發光二極體晶片的P極電接點之間,該些第二導通孔的導電層則分別電性連接於汲極電路與該些發光二極體晶片的N極電接點之間,該些發光二極體晶片分別用以發出紅、綠、藍光。 In order to achieve the above and other objects, the present invention provides an active RGB light-emitting diode pixel element, which includes a substrate, a circuit layer, three transistor chips, a solder mask, and three light-emitting diode chips, circuits The layer is formed on the substrate and includes a gate circuit, a source circuit, a drain circuit and a plurality of external electrical contacts, the external electrical contacts are electrically connected to the gate circuit, the source circuit and the Drain circuit, each transistor chip has a gate terminal, a source terminal and a drain terminal, the gate terminal and the source terminal of these transistor chips are respectively mounted on the gate circuit and the source circuit of the circuit layer and formed separately Electrically connected, the solder mask layer covers the substrate, the circuit layer and the transistor chip, and the solder mask layer has a plurality of first via holes and a plurality of second via holes, and a conductive layer is formed in the first and second via holes . Each glow The diode chip has a P-electrode contact and an N-electrode contact, the light-emitting diode chips are mounted on the solder mask, and the conductive layers of the first via holes are electrically connected to the The drain terminals of the transistor chips and the P-electrode contacts of the light-emitting diode chips, and the conductive layers of the second via holes are electrically connected to the drain circuit and the light-emitting diode chips, respectively Between the N-pole electrical contacts, the light-emitting diode chips are used to emit red, green, and blue light, respectively.

本新型藉由將電晶體晶片內埋於防焊層內,再利用導通孔使貼裝於防焊層表面的兩極分別電連接於電晶體晶片與汲極電極,不但實現了RGB發光二極體顯示器的主動式驅動設計,而且層數相較於傳統被動式發光二極體顯示器更低,而成本又比現有採用薄膜電晶體的主動式發光二極體顯示器更低,從而能夠滿足產業界對於發光二極體像素元件的輕薄化、降成本需求。 By embedding the transistor chip in the solder mask layer, and then using via holes, the two electrodes mounted on the surface of the solder mask layer are electrically connected to the transistor chip and the drain electrode respectively, which not only realizes the RGB light emitting diode The active drive design of the display, and the number of layers is lower than that of the traditional passive light-emitting diode display, and the cost is lower than the existing active light-emitting diode display using thin film transistors, which can meet the industry's The need for thinner and lighter diode elements reduces costs.

10‧‧‧基板 10‧‧‧ substrate

20‧‧‧電路層 20‧‧‧ circuit layer

21‧‧‧閘極電路 21‧‧‧Gate circuit

22‧‧‧源極電路 22‧‧‧Source circuit

23‧‧‧汲極電路 23‧‧‧ Drain circuit

24‧‧‧對外電接點 24‧‧‧External electrical contact

30‧‧‧電晶體晶片 30‧‧‧Transistor chip

31‧‧‧閘極端 31‧‧‧ Extreme

32‧‧‧源極端 32‧‧‧Source extreme

33‧‧‧汲極端 33‧‧‧ Extreme

40‧‧‧防焊層 40‧‧‧Soldering layer

41‧‧‧第一導通孔 41‧‧‧First via

42‧‧‧第二導通孔 42‧‧‧Second via

43、44‧‧‧導電層 43, 44‧‧‧ conductive layer

45‧‧‧第一電鍍層 45‧‧‧First plating layer

46‧‧‧第二電鍍層 46‧‧‧Second plating layer

47、48‧‧‧發光二極體焊墊 47, 48‧‧‧ LED pad

50‧‧‧發光二極體晶片 50‧‧‧ LED chip

51‧‧‧N極電接點 51‧‧‧N pole electric contact

52‧‧‧P極電接點 52‧‧‧P pole contact

第1圖為本新型主動式RGB發光二極體像素元件其中一實施例的局部分解立體圖。 FIG. 1 is a partially exploded perspective view of one embodiment of a novel active RGB light-emitting diode pixel device.

第2圖為本新型主動式RGB發光二極體像素元件其中一實施例的剖面示意圖。 FIG. 2 is a schematic cross-sectional view of one embodiment of a novel active RGB light-emitting diode pixel device.

第3圖為本新型主動式RGB發光二極體像素原件另一實施例的剖面示意圖。 FIG. 3 is a schematic cross-sectional view of another embodiment of the original active RGB light-emitting diode pixel original.

請參考第1、2圖,所繪示者為主動式RGB發光二極體像素元件的其中一實施例,其包括一基板10、一電路層20、三個電晶體晶片30、一防焊層40及三個發光二極體晶片50。本新型的主動式RGB發光二極體像素元件都可作為一個顯示器載板上的像素單位,並可被貼裝於顯示器載板上。 Please refer to FIG. 1 and FIG. 2, which shows an embodiment of an active RGB light-emitting diode pixel device, which includes a substrate 10, a circuit layer 20, three transistor chips 30, and a solder mask 40 and three light emitting diode chips 50. The active RGB light-emitting diode pixel elements of the present invention can be used as a pixel unit on a display carrier board and can be mounted on the display carrier board.

基板10可以採用一般電路板常用的基板材質,例如FR-4等級的環氧樹脂。 The substrate 10 may use a substrate material commonly used in general circuit boards, such as FR-4 grade epoxy resin.

電路層20形成於基板10上,且電路層20包括一閘極(Gate electrode)電路21、一源極(Source electrode)電路22、一汲極(Drain electrode)電路23及多個對外電接點24,對外電接點24分別電性連接閘極電路21、源極電路22及汲極電路23,對外電接點24是作為與一外部顯示器載板電性連接的介面,其數量視各電晶體晶片30的電極端是否有共用電路而定,但對外電接點24的數量至少為三個。該些電晶體晶片30各具有一閘極端31、一源極端32及汲極端33三個電接點,其中閘極端31及源極端32分別貼裝於電路層20的閘極電路21及源極電路22並分別形成電性連接,閘極端31與閘極電路21之間可能通過導電膠或錫球形成電性連接,源極端31與源極電路22之間亦同,本文的電晶體晶片30在貼設於基板10之前即已被預置成可實現電晶體的功能者,例如由晶圓分切製成的電晶體,本文的電晶體晶片30特別排除在基板10上以印刷或蒸鍍等方式逐漸形成所述汲極端、源極端及閘極端者,例如薄膜電晶體。本實施例中,電路層是以單層結構為例,在其他可能的實施方式中,電路層也可以是積層結構,使其具有較高的設計自由度,並可用以設計較複雜的線路,惟與被動式發光二極體顯示器相較,本新型的結構層數仍會較少。 The circuit layer 20 is formed on the substrate 10, and the circuit layer 20 includes a gate electrode circuit 21, a source electrode circuit 22, a drain electrode circuit 23, and a plurality of external electrical contacts 24. The external electrical contact 24 is electrically connected to the gate circuit 21, the source circuit 22 and the drain circuit 23 respectively. The external electrical contact 24 is used as an interface for electrically connecting to an external display carrier board, the number of which depends on each electrical The electrode terminal of the crystal wafer 30 depends on whether there is a common circuit, but the number of external electrical contacts 24 is at least three. The transistor chips 30 each have three electrical contacts: a gate terminal 31, a source terminal 32, and a drain terminal 33, wherein the gate terminal 31 and the source terminal 32 are respectively mounted on the gate circuit 21 and the source electrode of the circuit layer 20 The circuit 22 also forms an electrical connection. The gate terminal 31 and the gate circuit 21 may be electrically connected by conductive glue or solder balls. The source terminal 31 and the source circuit 22 are also the same. The transistor chip 30 herein Those that have been preset to realize the function of transistors before being placed on the substrate 10, such as transistors made by wafer dicing, the transistor wafer 30 herein is specifically excluded from the substrate 10 for printing or vapor deposition In other ways, the drain terminal, the source terminal, and the gate terminal are gradually formed, such as thin film transistors. In this embodiment, the circuit layer is a single-layer structure as an example. In other possible implementations, the circuit layer may also be a laminated structure, so that it has higher design freedom and can be used to design more complicated circuits. However, compared with passive light-emitting diode displays, the number of structural layers of the new type will still be less.

防焊層40覆蓋基板10、電路層20及該些電晶體晶片30,且防焊層具有多個第一導通孔41及多個第二導通孔42,這些第一、第二導通孔41、42內分別形成有導電層43、44,第一、第二導通孔例如是以雷射穿孔或機械鑽孔方式形成。 The solder resist layer 40 covers the substrate 10, the circuit layer 20 and the transistor wafers 30, and the solder resist layer has a plurality of first via holes 41 and a plurality of second via holes 42, these first and second via holes 41, The conductive layers 43 and 44 are respectively formed in the 42. The first and second via holes are formed by laser drilling or mechanical drilling, for example.

發光二極體晶片50各別具有一N極電接點51及一P極電接點52,其 可為覆晶發光二極體晶片,且發光二極體晶片50貼裝於防焊層40上,第一導通孔41的導電層43分別電性連接於電晶體晶片30的汲極端33及發光二極體晶片50的N極電接點51之間,第二導通孔42的導電層44則分別電性連接於汲極電路23與發光二極體晶片50的P極電接點52之間。為了增加N極電接點51及P極電接點52貼裝的可靠性,可在第一導通孔41的導電層43頂面形成第一電鍍層45,並在第二導通孔42的導電層44頂面形成一第二電鍍層46,使N極電接點51及P極電接點52分別貼裝於第一、電鍍層45、46。作為一種RGB發光二極體像素元件,所貼裝的發光二極體晶片分別用以發出紅光、綠光及藍光,以此組成一個畫素單位。 The light-emitting diode chips 50 each have an N-pole electrical contact 51 and a P-pole electrical contact 52, which It may be a flip chip light emitting diode chip, and the light emitting diode chip 50 is mounted on the solder resist layer 40, and the conductive layer 43 of the first via hole 41 is electrically connected to the drain terminal 33 and the light emitting of the transistor chip 30, respectively Between the N-electrode contacts 51 of the diode chip 50, the conductive layer 44 of the second via 42 is electrically connected between the drain circuit 23 and the P-electrode contacts 52 of the light-emitting diode chip 50, respectively . In order to increase the reliability of the mounting of the N-pole electrical contact 51 and the P-pole electrical contact 52, a first plating layer 45 may be formed on the top surface of the conductive layer 43 of the first via hole 41 and conductive in the second via hole 42 A second plating layer 46 is formed on the top surface of the layer 44 so that the N-pole electrical contact 51 and the P-pole electrical contact 52 are mounted on the first and plating layers 45 and 46, respectively. As an RGB light-emitting diode pixel element, the mounted light-emitting diode chips are used to emit red light, green light and blue light, respectively, to form a pixel unit.

本實施例中,電晶體晶片30為PNP型電晶體,亦即,當閘極端31為選擇狀態(開)時,電流會依序流經源極電路22、電晶體晶片30的源極端32而後流向汲極端33,最後進入N極電接點51並驅動發光二極體晶片50發光。 In this embodiment, the transistor chip 30 is a PNP transistor, that is, when the gate terminal 31 is in the selected state (open), current will flow through the source circuit 22 and the source terminal 32 of the transistor chip 30 in sequence. It flows to the drain terminal 33 and finally enters the N-pole electrical contact 51 and drives the light-emitting diode chip 50 to emit light.

如第3圖所示,在其他可能的實施方式中,電晶體晶片可以是NPN型電晶體,亦即,當閘極端31為選擇狀態(開)時,電流會從汲極電路23經由第二導通孔42內的導電層44進入N極電接點51並驅動發光二極體晶片50發光,而後經由P極電接點52依序經由第一導通孔41的導電層43流經汲極端33及源極端32,而後進入源極電路22。因此,本實施方式中,第一導通孔41的導電層43電性連接於汲極端33與P極電接點52之間,第二導通孔42的導電層44電性連接於汲極電路23與N極電接點51之間,P極電接點52及N極電接點51則分別貼裝於第一、第二電鍍層45、46上。 As shown in FIG. 3, in other possible implementations, the transistor wafer may be an NPN transistor, that is, when the gate terminal 31 is in the selected state (open), current will flow from the drain circuit 23 via the second The conductive layer 44 in the via hole 42 enters the N-pole electrical contact 51 and drives the light-emitting diode chip 50 to emit light, and then flows through the drain electrode 33 through the P-electrode contact 52 through the conductive layer 43 of the first via hole 41 in sequence And the source terminal 32, and then enter the source circuit 22. Therefore, in this embodiment, the conductive layer 43 of the first via 41 is electrically connected between the drain terminal 33 and the P-electrode contact 52, and the conductive layer 44 of the second via 42 is electrically connected to the drain circuit 23 Between the N-electrode contact 51, the P-electrode contact 52 and the N-electrode contact 51 are mounted on the first and second plating layers 45 and 46, respectively.

綜合上述,本新型藉由將電晶體晶片內埋於防焊層內,再利用導通孔使貼裝於防焊層表面的兩極分別電連接於電晶體晶片與汲極電極,不但實現了RGB發光二極體像素元件的主動式驅動設計,而且層數相較於傳統被動式 發光二極體顯示器更少,而由於電晶體晶片的造價低,因此成本又比現有採用薄膜電晶體的主動式發光二極體顯示器更低,從而能夠滿足產業界對於發光二極體像素元件的輕薄化、降成本需求。 In summary, by embedding the transistor chip in the solder mask layer, and then using via holes, the two electrodes mounted on the surface of the solder mask layer are electrically connected to the transistor chip and the drain electrode, which not only achieves RGB light emission The active driving design of the diode pixel device, and the number of layers is compared with the traditional passive There are fewer light-emitting diode displays, and because of the low cost of transistor chips, the cost is lower than that of existing active light-emitting diode displays using thin-film transistors, which can meet the industry's requirements for light-emitting diode pixel elements. Lightweight and cost-saving requirements.

10‧‧‧基板 10‧‧‧ substrate

20‧‧‧電路層 20‧‧‧ circuit layer

21‧‧‧閘極電路 21‧‧‧Gate circuit

22‧‧‧源極電路 22‧‧‧Source circuit

23‧‧‧汲極電路 23‧‧‧ Drain circuit

24‧‧‧對外電接點 24‧‧‧External electrical contact

30‧‧‧電晶體晶片 30‧‧‧Transistor chip

31‧‧‧閘極端 31‧‧‧ Extreme

32‧‧‧源極端 32‧‧‧Source extreme

33‧‧‧汲極端 33‧‧‧ Extreme

40‧‧‧防焊層 40‧‧‧Soldering layer

41‧‧‧第一導通孔 41‧‧‧First via

42‧‧‧第二導通孔 42‧‧‧Second via

43、44‧‧‧導電層 43, 44‧‧‧ conductive layer

45‧‧‧第一電鍍層 45‧‧‧First plating layer

46‧‧‧第二電鍍層 46‧‧‧Second plating layer

50‧‧‧發光二極體晶片 50‧‧‧ LED chip

51‧‧‧N極電接點 51‧‧‧N pole electric contact

52‧‧‧P極電接點 52‧‧‧P pole contact

Claims (4)

一種主動式RGB發光二極體像素元件,包括:一基板;一電路層,形成於該基板上,該電路層包括一閘極電路、一源極電路、一汲極電路及至少三個對外電接點,該些對外電接點分別電性連接該閘極電路、該源極電路及該汲極電路;三個電晶體晶片,各具有一閘極端、一源極端及一汲極端,該些電晶體晶片的閘極端及源極端分別貼裝於該電路層的所述閘極電路及所述源極電路並分別形成電性連接;一防焊層,覆蓋該基板、該電路層及該些電晶體晶片,該防焊層具有多個第一導通孔及多個第二導通孔,該些第一、第二導通孔內分別形成有導電層;以及三個發光二極體晶片,各具有一N極電接點及一P極電接點,該些發光二極體晶片貼裝於該防焊層上,且該些第一導通孔的導電層分別電性連接於該些電晶體晶片的所述汲極端與該些發光二極體晶片的N極電接點之間,該些第二導通孔的導電層分別電性連接於該汲極電路與該些發光二極體晶片的P極電接點之間,該些發光二極體晶片分別用以發出紅、綠、藍光。 An active RGB light-emitting diode pixel element includes: a substrate; a circuit layer formed on the substrate, the circuit layer includes a gate circuit, a source circuit, a drain circuit and at least three external power Contacts, the external electrical contacts are electrically connected to the gate circuit, the source circuit and the drain circuit respectively; the three transistor chips each have a gate terminal, a source terminal and a drain terminal, the The gate terminal and the source terminal of the transistor chip are respectively mounted on the gate circuit and the source circuit of the circuit layer and form an electrical connection; a solder mask layer covers the substrate, the circuit layer and these Transistor wafer, the solder resist layer has a plurality of first via holes and a plurality of second via holes, a conductive layer is formed in the first and second via holes, respectively, and three light emitting diode chips, each having An N-pole electrical contact and a P-pole electrical contact, the light-emitting diode chips are mounted on the solder resist layer, and the conductive layers of the first via holes are electrically connected to the transistor chips, respectively Between the drain terminals and the N-pole electrical contacts of the light emitting diode chips, the conductive layers of the second via holes are electrically connected to the drain circuit and the P of the light emitting diode chips, respectively Between the electrode contacts, the light-emitting diode chips are used to emit red, green, and blue light, respectively. 如請求項1所述的主動式RGB發光二極體像素元件,其中該些第一導通孔的導電層頂面分別形成有多個第一電鍍層,該些第二導通孔的導電層頂面分別形成有多個第二電鍍層,該些發光二極體晶片的所述N極電接點及所述P極電接點是分別貼裝於該些第一電鍍層及該些第二電鍍層。 The active RGB light-emitting diode pixel device according to claim 1, wherein a plurality of first electroplating layers are formed on the top surfaces of the conductive layers of the first via holes, respectively, and a top surface of the conductive layers of the second via holes A plurality of second electroplating layers are formed respectively, and the N-electrode contacts and the P-electrode contacts of the light-emitting diode chips are respectively mounted on the first electroplating layers and the second electroplating Floor. 一種主動式RGB發光二極體像素元件,包括: 一基板;一電路層,形成於該基板上,該電路層包括一閘極電路、一源極電路、一汲極電路及至少三個對外電接點,該些對外電接點分別電性連接該閘極電路、該源極電路及該汲極電路;三個電晶體晶片,各具有一閘極端、一源極端及一汲極端,該些電晶體晶片的閘極端及源極端分別貼裝於該電路層的所述閘極電路及所述源極電路並分別形成電性連接;一防焊層,覆蓋該基板、該電路層及該些電晶體晶片,該防焊層具有多個第一導通孔及多個第二導通孔,該些第一、第二導通孔內分別形成有導電層;以及三個發光二極體晶片,各具有一P極電接點及一N極電接點,該些發光二極體晶片貼裝於該防焊層上,且該些第一導通孔的導電層分別電性連接於該些電晶體晶片的所述汲極端與該些發光二極體晶片的P極電接點之間,該些第二導通孔的導電層分別電性連接於該汲極電路與該些發光二極體晶片的N極電接點之間,該些發光二極體晶片分別用以發出紅、綠、藍光。 An active RGB light-emitting diode pixel element, including: A substrate; a circuit layer formed on the substrate, the circuit layer includes a gate circuit, a source circuit, a drain circuit and at least three external electrical contacts, the external electrical contacts are electrically connected respectively The gate circuit, the source circuit, and the drain circuit; the three transistor chips each have a gate terminal, a source terminal, and a drain terminal, and the gate terminals and source terminals of the transistor chips are mounted on The gate circuit and the source circuit of the circuit layer form electrical connections respectively; a solder mask layer covers the substrate, the circuit layer and the transistor chips, the solder mask layer has a plurality of first A via hole and a plurality of second via holes, a conductive layer is formed in the first and second via holes; and three light-emitting diode chips, each having a P-electrode contact and an N-electrode contact The light-emitting diode chips are mounted on the solder mask layer, and the conductive layers of the first via holes are electrically connected to the drain terminals of the transistor chips and the light-emitting diode chips, respectively Between the P-electrode contacts, the conductive layers of the second via holes are electrically connected between the drain circuit and the N-electrode contacts of the light-emitting diode chips, respectively, the light-emitting diodes The chips are used to emit red, green and blue light respectively. 如請求項3所述的主動式RGB發光二極體像素元件,其中該些第一導通孔的導電層頂面分別形成有多個第一電鍍層,該些第二導通孔的導電層頂面分別形成有多個第二電鍍層,該些發光二極體晶片的所述P極電接點及所述N極電接點是分別貼裝於該些第一電鍍層及該些第二電鍍層。 The active RGB light-emitting diode pixel device according to claim 3, wherein a plurality of first electroplating layers are formed on the top surfaces of the conductive layers of the first via holes, respectively, and a top surface of the conductive layers of the second via holes A plurality of second electroplating layers are formed respectively, and the P-electrode contacts and the N-electrode contacts of the light-emitting diode chips are respectively mounted on the first electroplating layers and the second electroplating Floor.
TW108212292U 2019-09-17 2019-09-17 Active RGB light-emitting diode pixel element TWM590765U (en)

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