CN112289819A - Active RGB LED display carrier plate - Google Patents
Active RGB LED display carrier plate Download PDFInfo
- Publication number
- CN112289819A CN112289819A CN201910676084.3A CN201910676084A CN112289819A CN 112289819 A CN112289819 A CN 112289819A CN 201910676084 A CN201910676084 A CN 201910676084A CN 112289819 A CN112289819 A CN 112289819A
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- circuit
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- drain
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- 229910000679 solder Inorganic materials 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 24
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052802 copper Inorganic materials 0.000 claims abstract description 21
- 239000010949 copper Substances 0.000 claims abstract description 21
- 241001124569 Lycaenidae Species 0.000 claims description 8
- 235000014987 copper Nutrition 0.000 claims description 8
- 239000010410 layer Substances 0.000 description 47
- 238000007747 plating Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 238000005553 drilling Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Led Device Packages (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The application provides an active RGB light-emitting diode display carrier plate, which comprises a substrate, a circuit layer, a plurality of transistor chips, a solder mask layer and a plurality of light-emitting diode chips, wherein the circuit layer comprises a gate circuit, a source circuit and a drain circuit, the transistor chips are provided with a gate terminal, a source terminal and a drain terminal, the gate terminal and the source terminal are respectively attached to the gate circuit and the source circuit, the solder mask layer covers the substrate, the circuit layer and the transistor chips, the solder mask layer is provided with a plurality of first conducting holes and a plurality of second conducting holes, and hole copper is formed in the first conducting holes and the second conducting holes. Each LED chip has an N-pole electrical contact and a P-pole electrical contact, and the hole copper of the first via hole is electrically connected between the drain terminal and the N-pole electrical contact, and the hole copper of the second via hole is electrically connected between the drain circuit and the P-pole electrical contact.
Description
Technical Field
The present application relates to a light emitting diode display carrier, and more particularly, to an active light emitting diode display carrier.
Background
With the gradual development of micro light emitting diode (mini LED) technology, the development prospect of light emitting diode display (LED display) is expected.
The led display can be classified into a passive driving type and an active driving type according to the difference of driving modes. The passive driving method needs to arrange row-matrix scanning electrodes and data electrodes on the substrate and directly use scanning signals to drive the led chips in each frame, but the scanning electrodes and data electrodes are arranged in a row-matrix manner, which results in a complicated circuit arrangement, resulting in a number of layers of the passive led display carrier plate generally reaching six, eight or more layers of circuits, and thus, the processing cost is increased.
On the other hand, the active driving method is to form a plurality of thin film transistors directly on a glass or Polyimide (PI) substrate by sputtering, so as to individually control the led chips in each pixel, although the active led display reduces the number of layers of the carrier by disposing the thin film transistors, the process cost for forming the thin film transistors by sputtering is still higher, the glass substrate has the characteristic of fragility, the polyimide substrate has higher cost, so that the existing active led display has other disadvantages of higher cost and the like although it is lighter and thinner.
Disclosure of Invention
In view of the above, the present disclosure provides an active led display carrier with a lower manufacturing cost and fewer carrier layers than a passive led display.
In order to achieve the above and other objects, the present application provides an active RGB led display carrier, which includes a substrate, a circuit layer, a plurality of transistor chips, a solder mask layer, and a plurality of led chips, wherein the circuit layer is formed on the substrate and includes a gate circuit, a source circuit, and a drain circuit, each transistor chip has a gate terminal, a source terminal, and a drain terminal, the gate terminal and the source terminal of the transistor chip are respectively attached to the gate circuit and the source circuit of the circuit layer and respectively electrically connected to each other, the solder mask layer covers the substrate, the circuit layer, and the transistor chips, the solder mask layer has a plurality of first via holes and a plurality of second via holes, and the first via holes and the second via holes have copper holes formed therein. Each LED chip is provided with an N-pole electric contact and a P-pole electric contact, the LED chips are attached to the solder mask layer, the hole coppers of the first via holes are respectively and electrically connected between the drain electrode ends of the transistor chips and the N-pole electric contacts of the LED chips, and the hole coppers of the second via holes are respectively and electrically connected between the drain electrode circuit and the P-pole electric contacts of the LED chips.
In order to achieve the above and other objects, the present application provides an active RGB led display carrier, which includes a substrate, a circuit layer, a plurality of transistor chips, a solder mask layer, and a plurality of led chips, wherein the circuit layer is formed on the substrate and includes a gate circuit, a source circuit, and a drain circuit, each transistor chip has a gate terminal, a source terminal, and a drain terminal, the gate terminal and the source terminal of the transistor chip are respectively attached to the gate circuit and the source circuit of the circuit layer and respectively electrically connected to each other, the solder mask layer covers the substrate, the circuit layer, and the transistor chips, the solder mask layer has a plurality of first via holes and a plurality of second via holes, and the first via holes and the second via holes have copper holes formed therein. Each LED chip is provided with a P-pole electric contact and an N-pole electric contact, the LED chips are attached to the solder mask layer, the hole coppers of the first via holes are respectively and electrically connected between the drain electrode ends of the transistor chips and the P-pole electric contacts of the LED chips, and the hole coppers of the second via holes are respectively and electrically connected between the drain electrode circuit and the N-pole electric contacts of the LED chips.
The transistor chip is embedded in the solder mask layer, and the two electrodes attached to the surface of the solder mask layer are respectively electrically connected to the transistor chip and the drain electrode by the via hole, so that the active driving design of the RGB light-emitting diode display is realized, the number of layers is lower than that of the traditional passive light-emitting diode display, the cost is lower than that of the existing active light-emitting diode display adopting a thin film transistor, and the requirements of lightness, thinness and cost reduction of the light-emitting diode display carrier plate in the industry can be met.
Further details regarding other functions and embodiments of the present application are described below with reference to the accompanying drawings.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments described in the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a partially exploded perspective view of an embodiment of an active RGB LED display carrier according to the present disclosure;
fig. 2 to fig. 4 are schematic cross-sectional views illustrating an embodiment of an active RGB led display carrier according to the present invention.
Description of the symbols
10: substrate 20: circuit layer
21: the gate circuit 22: source electrode circuit
23: a drain circuit 30: transistor chip
31: gate terminal 32: source terminal
33: the drain terminal 40: welding-proof layer
41: first via hole 42: second via hole
43. 44: hole copper 45: the first electroplated layer
46: second plating layers 47, 48: light emitting diode bonding pad
50: light-emitting diode chip 51: n-pole electrical contact
52: p-pole electrical contact
Detailed Description
Referring to fig. 1 and fig. 2, an embodiment of an active RGB led display carrier according to the present invention is shown, which includes a substrate 10, a circuit layer 20, a plurality of transistor chips 30, a solder mask 40, and a plurality of led chips 50.
The substrate 10 may be made of a substrate material commonly used for circuit boards, such as FR-4 grade epoxy resin.
The circuit layer 20 is formed on the substrate 10, and the circuit layer 20 includes a Gate (Gate electrode) circuit 21, a Source electrode (Source electrode) circuit 22, and a Drain electrode (Drain electrode) circuit 23. The transistor chips 30 each have three electrical contacts, a gate terminal 31, a source terminal 32 and a drain terminal 33, wherein the gate terminal 31 and the source terminal 32 are respectively attached to the gate circuit 21 and the source circuit 22 of the circuit layer 20 and are electrically connected to each other, the gate terminal 31 and the gate circuit 21 may be electrically connected to each other by a conductive adhesive or a solder ball, and the source terminal 31 and the source circuit 22 are also electrically connected to each other. In this embodiment, the circuit layer is a single-layer structure, and in other possible embodiments, the circuit layer may be a multi-layer structure, so that the circuit layer has a higher degree of freedom in design and can be used to design more complicated lines.
The solder mask layer 40 covers the substrate 10, the circuit layer 20 and the transistor chips 30, and has a plurality of first via holes 41 and a plurality of second via holes 42, wherein the first and second via holes 41 and 42 are respectively formed with via copper 43 and 44, and the first and second via holes are formed by, for example, laser drilling or mechanical drilling.
The led chips 50 each have an N-pole electrical contact 51 and a P-pole electrical contact 52, which may be flip-chip led chips, and the led chips 50 are mounted on the solder mask layer 40, the via copper 43 of the first via hole 41 is electrically connected between the drain electrode 33 of the transistor chip 30 and the N-pole electrical contact 51 of the led chip 50, and the via copper 44 of the second via hole 42 is electrically connected between the drain circuit 23 and the P-pole electrical contact 52 of the led chip 50. In order to increase the reliability of the mounting of the N-pole electrical contact 51 and the P-pole electrical contact 52, a first plating layer 45 is formed on the top surface of the hole copper 43 of the first via hole 41, a second plating layer 46 is formed on the top surface of the hole copper 44 of the second via hole 42, and the N-pole electrical contact 51 and the P-pole electrical contact 52 are mounted on the first plating layer 45 and the second plating layer 46, respectively. As a RGB LED display, the LED chips are respectively used for emitting red light, green light and blue light, three LED chips respectively emitting red light, green light and blue light form a pixel, and each RGB LED display is provided with a plurality of pixels.
In the present embodiment, the transistor chip 30 is a PNP transistor, that is, when the gate terminal 31 is in the selected state (on), the current flows through the source circuit 22, the source terminal 32 of the transistor chip 30, then flows to the drain terminal 33, and finally enters the N-terminal contact 51 to drive the light emitting diode chip 50 to emit light.
In other possible embodiments, as shown in fig. 3, the transistor chip may be an NPN transistor, i.e., when the gate terminal 31 is in the selected state (on), the current will flow from the drain circuit 23 through the via copper 44 in the second via hole 42 into the N-pole contact 51 and drive the led chip 50 to emit light, and then flow through the drain terminal 33 and the source terminal 32 through the P-pole contact 52 sequentially through the via copper 43 in the first via hole 41, and then flow into the source circuit 22. Therefore, in the present embodiment, the via copper 43 of the first via hole 41 is electrically connected between the drain terminal 33 and the P-pole electrical contact 52, the via copper 44 of the second via hole 42 is electrically connected between the drain circuit 23 and the N-pole electrical contact 51, and the P-pole electrical contact 52 and the N-pole electrical contact 51 are respectively attached to the first and second plating layers 45, 46.
In the third embodiment shown in fig. 4, the P, N pole electrical contacts 51, 52 are not directly opposite to the first and second via holes 41, 42, but are attached to the led pads 47, 48 extending from the top of the first and second via holes 41, 42 and formed on the top surface of the solder mask layer 40.
In summary, the present application embeds the transistor chip into the solder mask layer, and then electrically connects the two electrodes attached to the surface of the solder mask layer to the transistor chip and the drain electrode respectively by using the via hole, so as to not only realize the active driving design of the RGB led display, but also have a lower number of layers compared with the conventional passive led display, and because the cost of the transistor chip is low, the cost is lower than that of the conventional active led display using the thin film transistor, thereby meeting the requirements of the industry for thinning and reducing the cost of the led display carrier plate.
The above-described embodiments and/or implementations are only illustrative of the preferred embodiments and/or implementations for implementing the technology of the present application, and are not intended to limit the implementations of the technology of the present application in any way, and those skilled in the art can make many changes or modifications to the equivalent embodiments without departing from the scope of the technology disclosed in the present application, but should still be considered as the technology or implementations substantially the same as the present application.
Claims (5)
1. An active RGB LED display carrier, comprising:
a substrate;
a circuit layer formed on the substrate, the circuit layer including a gate circuit, a source circuit and a drain circuit;
a plurality of transistor chips, each having a gate terminal, a source terminal and a drain terminal, the gate terminal and the source terminal of the transistor chips being respectively attached to the gate circuit and the source circuit of the circuit layer and being electrically connected to each other;
the solder mask layer covers the substrate, the circuit layer and the transistor chips, the solder mask layer is provided with a plurality of first through holes and a plurality of second through holes, and hole copper is respectively formed in the first through holes and the second through holes; and
the plurality of light emitting diode chips are respectively provided with an N-pole electric contact and a P-pole electric contact, the light emitting diode chips are attached to the solder mask layer, the hole coppers of the first via holes are respectively and electrically connected between the drain electrodes of the transistor chips and the N-pole electric contacts of the light emitting diode chips, and the hole coppers of the second via holes are respectively and electrically connected between the drain circuit and the P-pole electric contacts of the light emitting diode chips.
2. The active RGB led display carrier of claim 1, wherein the first via holes have a plurality of first plated layers formed on top of the hole copper, the second via holes have a plurality of second plated layers formed on top of the hole copper, and the N-electrode contacts and the P-electrode contacts of the led chips are attached to the first plated layers and the second plated layers, respectively.
3. An active RGB LED display carrier, comprising:
a substrate;
a circuit layer formed on the substrate, the circuit layer including a gate circuit, a source circuit and a drain circuit;
a plurality of transistor chips, each having a gate terminal, a source terminal and a drain terminal, the gate terminal and the source terminal of the transistor chips being respectively attached to the gate circuit and the source circuit of the circuit layer and being electrically connected to each other;
the solder mask layer covers the substrate, the circuit layer and the transistor chips, the solder mask layer is provided with a plurality of first through holes and a plurality of second through holes, and hole copper is respectively formed in the first through holes and the second through holes; and
the plurality of light emitting diode chips are respectively provided with a P-pole electric contact and an N-pole electric contact, the light emitting diode chips are attached to the solder mask layer, the hole coppers of the first via holes are respectively and electrically connected between the drain electrodes of the transistor chips and the P-pole electric contacts of the light emitting diode chips, and the hole coppers of the second via holes are respectively and electrically connected between the drain circuit and the N-pole electric contacts of the light emitting diode chips.
4. The active RGB led display carrier of claim 3, wherein the first via holes have a plurality of first plated layers formed on top of the hole copper, the second via holes have a plurality of second plated layers formed on top of the hole copper, and the P-pole electrical contacts and the N-pole electrical contacts of the led chips are attached to the first plated layers and the second plated layers, respectively.
5. The active RGB LED display carrier of any one of claims 1-4, wherein the LED chips are flip-chip LED chips。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910676084.3A CN112289819A (en) | 2019-07-25 | 2019-07-25 | Active RGB LED display carrier plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910676084.3A CN112289819A (en) | 2019-07-25 | 2019-07-25 | Active RGB LED display carrier plate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112289819A true CN112289819A (en) | 2021-01-29 |
Family
ID=74418824
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910676084.3A Pending CN112289819A (en) | 2019-07-25 | 2019-07-25 | Active RGB LED display carrier plate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112289819A (en) |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020191140A1 (en) * | 2001-06-13 | 2002-12-19 | Seiko Epson Corporation | Substrate assembly, method of testing the substrate assembly, electrooptical device, method of manufacturing the electrooptical device, and electronic equipment |
| KR20130046175A (en) * | 2011-10-27 | 2013-05-07 | 서울반도체 주식회사 | Multi chip type light emitting diode package |
| US20140231852A1 (en) * | 2013-02-15 | 2014-08-21 | Seoul Viosys Co., Ltd. | Led chip resistant to electrostatic discharge and led package including the same |
| TWI588919B (en) * | 2016-03-04 | 2017-06-21 | 尼克森微電子股份有限公司 | Semiconductor package structure and manufacturing method thereof |
| US20170207249A1 (en) * | 2016-01-18 | 2017-07-20 | Lg Electronics Inc. | Display device using semiconductor light emitting device |
| CN107578709A (en) * | 2016-07-05 | 2018-01-12 | 群创光电股份有限公司 | The manufacture method of display device and display device |
| GB201721243D0 (en) * | 2016-12-20 | 2018-01-31 | Lg Display Co Ltd | Light emitting diode chip and light emitting diode display apparatus comprising the same |
| US20180211991A1 (en) * | 2017-01-26 | 2018-07-26 | Acer Incorporated | Light emitting diode display and fabricating method thereof |
| CN208014702U (en) * | 2018-02-14 | 2018-10-26 | 同泰电子科技股份有限公司 | Micro light-emitting diode module |
| CN109728141A (en) * | 2017-10-27 | 2019-05-07 | 隆达电子股份有限公司 | Dot structure |
| CN109904186A (en) * | 2019-02-28 | 2019-06-18 | 京东方科技集团股份有限公司 | A kind of display base plate and preparation method thereof, display device |
-
2019
- 2019-07-25 CN CN201910676084.3A patent/CN112289819A/en active Pending
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020191140A1 (en) * | 2001-06-13 | 2002-12-19 | Seiko Epson Corporation | Substrate assembly, method of testing the substrate assembly, electrooptical device, method of manufacturing the electrooptical device, and electronic equipment |
| KR20130046175A (en) * | 2011-10-27 | 2013-05-07 | 서울반도체 주식회사 | Multi chip type light emitting diode package |
| US20140231852A1 (en) * | 2013-02-15 | 2014-08-21 | Seoul Viosys Co., Ltd. | Led chip resistant to electrostatic discharge and led package including the same |
| US20170207249A1 (en) * | 2016-01-18 | 2017-07-20 | Lg Electronics Inc. | Display device using semiconductor light emitting device |
| TWI588919B (en) * | 2016-03-04 | 2017-06-21 | 尼克森微電子股份有限公司 | Semiconductor package structure and manufacturing method thereof |
| CN107578709A (en) * | 2016-07-05 | 2018-01-12 | 群创光电股份有限公司 | The manufacture method of display device and display device |
| GB201721243D0 (en) * | 2016-12-20 | 2018-01-31 | Lg Display Co Ltd | Light emitting diode chip and light emitting diode display apparatus comprising the same |
| US20180211991A1 (en) * | 2017-01-26 | 2018-07-26 | Acer Incorporated | Light emitting diode display and fabricating method thereof |
| CN109728141A (en) * | 2017-10-27 | 2019-05-07 | 隆达电子股份有限公司 | Dot structure |
| CN208014702U (en) * | 2018-02-14 | 2018-10-26 | 同泰电子科技股份有限公司 | Micro light-emitting diode module |
| CN109904186A (en) * | 2019-02-28 | 2019-06-18 | 京东方科技集团股份有限公司 | A kind of display base plate and preparation method thereof, display device |
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Effective date of registration: 20210816 Address after: Room 306, No. 6, West Zhufeng Avenue, Doumen District, Zhuhai City, Guangdong Province Applicant after: Guangdong Zecheng Technology Co.,Ltd. Address before: No. 15, Lane 2, Liyuan Road, Linkou District, Xinbei City, Taiwan, China Applicant before: Li Huiru |
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