JP4565723B2 - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device Download PDF

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Publication number
JP4565723B2
JP4565723B2 JP2000291837A JP2000291837A JP4565723B2 JP 4565723 B2 JP4565723 B2 JP 4565723B2 JP 2000291837 A JP2000291837 A JP 2000291837A JP 2000291837 A JP2000291837 A JP 2000291837A JP 4565723 B2 JP4565723 B2 JP 4565723B2
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substrate
light emitting
electrode
external connection
emitting device
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JP2002111065A (en
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忠宏 岡崎
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Rohm Co Ltd
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Rohm Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

Description

【０００１】
【産業上の利用分野】
この発明は半導体発光装置に関し、特にたとえば第１、第２および第３発光素子チップを基板上に形成した第１、第２および第３ダイボンディング電極にダイボンディングし、かつ第１、第２および第３発光素子チップから第１、第２および第３ワイヤボンディング電極にワイヤボンディングし、その上で透光性樹脂で封止した、半導体発光装置に関する。
【０００２】
【従来の技術】
図４に示す従来のこの種の半導体発光装置１では、基板２上に異なる色（たとえば、緑色、赤色および青色）を発光する発光素子チップ（ＬＥＤチップ）３ａ、３ｂおよび３ｃがボンディングされ、ＬＥＤチップ３ａ、３ｂおよび３ｃがエポキシ樹脂のような透光性樹脂４で封止される。つまり、基板２の上面２ａには、ＬＥＤチップ３ａ、３ｂおよび３ｃのそれぞれに対応する配線パターン５が形成される。具体的には、配線パターン５は、ダイボンディング電極（リード）６ａ、６ｂおよび６ｃとワイヤボンディング電極（リード）７ａ、７ｂおよび７ｃとによって形成される。このリード６ａ、６ｂ、６ｃ、７ａ、７ｂおよび７ｃは、それぞれ個別に基板２の側面を介して基板２の裏面に形成された外部接続電極（図示せず）に連結されていた。このような半導体発光装置１は、たとえばディスプレイのような面発光装置（図示せず）を含む電子機器に適用され、複数の半導体発光装置１が面発光装置の回路基板（プリント基板）に実装される。そして、半導体発光装置１のそれぞれにおいて、選択的にＬＥＤチップ３ａ、３ｂおよび３ｃが点灯（発光）され、カラー画像を表示していた。
【０００３】
【発明が解決しようとする課題】
しかし、この従来技術では、リード６ａ、６ｂおよび６ｃを並べて形成するとともに、リード７ａ、７ｂおよび７ｃを並べて形成するため、リード６ａ、６ｂおよび６ｃ側ではそれぞれのリード間が密になってしまい、リード７ａ、７ｂおよび７ｃ側ではそれぞれのリード間が疎になってしまっていた。つまり、基板２の面積を有効に使用できていなかった。言い換えると、基板２の面積が大きくなってしまっていた。このため、半導体発光装置１自体が大きくなってしまい、さらには半導体発光装置１を実装する電子機器も大きくなってしまっていた。
【０００４】
それゆえに、この発明の主たる目的は、小型化できる、半導体発光装置を提供することである。
【０００５】
【課題を解決するための手段】
この発明は、第１、第２および第３発光素子チップを、基板上に形成した第１、第２および第３ダイボンディング電極にダイボンディングし、かつ第１、第２および第３発光素子チップから第１、第２および第３ワイヤボンディング電極にワイヤボンディングし、その上で透光性樹脂で封止した半導体発光装置において、基板の裏面に、第１、第２および第３ダイボンディング電極および第１、第２および第３ワイヤボンディング電極のそれぞれと基板の側面を介して連結される外部接続電極を備え、基板の上面の一方側に第１ダイボンディング電極、第２ワイヤボンディング電極および第３ダイボンディング電極を配置し、他方側に第１ワイヤボンディング電極、第２ダイボンディング電極および第３ワイヤボンディング電極を配置し、第１、第２および第３ダイボンディング電極をそれぞれ対向する第１、第２および第３ワイヤボンディング電極より幅広にし、さらに第２ダイボンディング電極にダイボンディングされる発光素子チップを他の発光素子チップとは逆極性の構造にしたことを特徴とする、半導体発光装置である。
【０００６】
【作用】
この発明の半導体発光装置では基板に第１、第２および第３ＬＥＤチップがボンディングされ、これらのＬＥＤチップはエポキシ樹脂のような透光性樹脂で封止される。第１チップは、第１ダイボンディング電極にダイボンディングされ、第１ワイヤボンディング電極にワイヤボンディングされる。また、第２チップは、第２ダイボンディング電極にダイボンディングされ、第２ワイヤボンディング電極にワイヤボンディングされる。さらに、第３チップは、第３ダイボンディング電極にダイボンディングされ、第３ワイヤボンディング電極にワイヤボンディングされる。このような半導体発光装置では、たとえば、基板の上面の一方側に第１ダイボンディング電極、第２ワイヤボンディング電極および第３ダイボンディング電極が配置され、他方側に第１ワイヤボンディング電極、第２ダイボンディング電極および第３ワイヤボンディング電極が配置される。つまり、ダイボンディング電極とワイヤボンディング電極とが交互に設けられる。したがって、ダイボンディング電極とワイヤボンディング電極とを個別にまとめて対極に設ける場合に比べて、基板面積を有効に使用することができる。つまり、基板を小さくすることができる。
【０００７】
たとえば、基板の裏面には、第１、第２、第３ダイボンディング電極および第１、第２、第３ワイヤボンディング電極のそれぞれと連結される外部接続電極が設けられる。したがって、この半導体発光装置をディスプレイなどの面発光装置を含む電子機器の回路基板（プリント基板）に実装することができる。
【０００８】
この外部接続電極は、基板の側面を介して第１、第２、第３ダイボンディング電極および第１、第２、第３ワイヤボンディング電極に連結される。
【０００９】
したがって、第２ダイボンディング電極にダイボンディングされるＬＥＤチップを他の２つのＬＥＤチップとは逆極性の構造にすれば、従来のプリント基板の配線パターンを大幅に変更せずに実装することができる。
【００１０】
また、基板にその表面から裏面に貫通する２つの孔を設ければ、基板の両端のそれぞれで極性が揃うように、外部接続電極はそれぞれの孔を介して第２ダイボンディング電極および第２ワイヤボンディング電極に連結することができる。
【００１１】
なお、この場合には、３つのＬＥＤチップは同じ構造のものを使用することができる。
【００１２】
たとえば、赤色、青色、緑色を発光する第１、第２および第３ＬＥＤチップをボンディングすれば、それぞれのＬＥＤチップを単独で発光させて、３つの色を選択的に発光させることができる。また、任意の組み合わせでＬＥＤチップを発光させれば、加色法によって紫色、黄色、藍色または白色を発光させることもできる。
【００１３】
【発明の効果】
この発明によれば、基板を小さくすることができるので、装置自体の小型化を図ることができる。
【００１４】
この発明の上述の目的，その他の目的，特徴および利点は、図面を参照して行う以下の実施例の詳細な説明から一層明らかとなろう。
【００１５】
【実施例】
図１を参照して、この実施例の半導体発光装置（以下、単に「発光装置」という。）１０は、ガラスエポキシあるいはセラミックで形成された絶縁性基板（以下、単に「基板」という。）１２を含む。基板１２上には、たとえば発光色が互いに異なる３つの発光素子チップ（ＬＥＤチップ）１４ａ、１４ｂおよび１４ｃがボンディングされる。
【００１６】
たとえば、この実施例では、ＬＥＤチップ１４ａが緑色（Ｇ）を発光し、またＬＥＤチップ１４ｂが赤色（Ｒ）を発光し、そして、ＬＥＤチップ１４ｃが青色（Ｂ）を発光する。また、図示は省略するが、この実施例では、ＬＥＤチップ１４ａおよび１４ｃは、ｐ層が上側に設けられ、ｎ層が下側に設けられるｐｎ接合を有するＬＥＤで形成され、ＬＥＤチップ１４ｂは、ｐ層が下側に設けられ、ｎ層が上側に設けられるｐｎ接合を有するＬＥＤで形成される。
【００１７】
また、図２（Ａ）からもよく分かるように、基板１２の上面１２ａには、３つのＬＥＤ１４ａ、１４ｂおよび１４ｃのそれぞれをボンディングするための配線パターン１６が形成される。この配線パターン１６は、たとえば銅箔で形成され、ダイボンディング電極（リード）１８ａ、１８ｂおよび１８ｃとワイヤボンディング電極（リード）２０ａ、２０ｂおよび２０ｃとを含み、基板１２の上面１２ａの一方側にはリード１８ａ、リード２０ｂおよびリード１８ｃが配置され、他方側にはリード２０ａ、リード１８ｂおよびリード２０ｃが配置される。つまり、ダイボンディング電極とワイヤボンディング電極とが交互に設けられる。
【００１８】
このような配線パターン１６に、図１で示したように、ＬＥＤチップ１４ａ、１４ｂおよび１４ｃがボンディングされる。具体的には、ＬＥＤチップ１４ａは、リード１８ａに銀ペーストのような接着剤（図示せず）でダイボンディング（接着）され、金線のようなボンディングワイヤ（以下、単に「ワイヤ」という。
）２２ａによって、リード２０ａにワイヤボンディングされる。また、ＬＥＤチップ１４ｂは、リード１８ｂに接着剤でダイボンディングされ、ワイヤ２２ｂによって、リード２０ｂにワイヤボンディングされる。さらに、ＬＥＤチップ１４ｃは、リード１８ｃに接着剤でダイボンディングされ、ワイヤ２２ｃによって、リード２０ｃにワイヤボンディングされる。
【００１９】
一方、図２（Ｂ）から分かるように、基板１２の裏面１２ｂには、３つのＬＥＤ１４ａ、１４ｂおよび１４ｃのそれぞれに対応して外部接続電極２４ａ〜２４ｆが形成される。この外部接続電極２４ａ〜２４ｆは、図２（Ａ）および図２（Ｂ）から分かるように、基板１２の側面１２ｃを介して、対応するリード１８ａ〜１８ｃおよびリード２０ａ〜２０ｃに接続（連結）される。具体的には、リード１８ａが外部接続電極２４ａと連結され、リード２０ｂが外部接続電極２４ｂと連結され、リード１８ｃが外部接続電極２４ｃと連結される。また、リード２０ａが外部接続電極２４ｄと連結され、リード１８ｂが外部接続電極２４ｅと連結され、リード２０ｃが外部接続電極２４ｆと連結される。
【００２０】
なお、外部接続電極２４ａ〜２４ｆも、リード１８ａ〜１８ｃおよびリード２０ａ〜２０ｃと同様に、銅箔で形成される。
【００２１】
また、図１および図２（Ａ）、（Ｂ）においては、分かり易く示すために、リードおよび外部接続電極には厚みを付けてある。
【００２２】
さらに、リード１８ａ〜１８ｃ、２４ａ〜２４ｃと外部接続電極２４ａ〜２４ｆとを基板１２の側面１２ｃに設けられたスルーホールを介して連結するように図示してあるが、スルーホールを設けずに側面１２ｃを介して連結するようにしてもよい。
【００２３】
図１に戻って、発光装置１０はまた、エポキシ樹脂のような透光性樹脂２６を含み、透光性樹脂２６は基板１２の上面１２ａ側に形成される。つまり、透光性樹脂２６は、ＬＥＤチップ１４ａ〜１４ｃおよびワイヤ２２ａ〜２２ｃを封止している。
【００２４】
なお、図１および図２（Ａ）、（Ｂ）から分かるように、透光性樹脂２６の形成時に、透光性樹脂２６が基板１２の裏面１２ｂ側に流れないように、リード１８ａ〜１８ｃおよびリード２０ａ〜２０ｃは基板１２の側面１２ｃに形成されたスルーホールを塞ぐように残されている。
【００２５】
たとえば、発光装置１０は、ディスプレイにカラー画像を表示するような面発光装置を含む電子機器（図示せず）に用いられる。たとえば、複数の発光装置１０は、格子状に並べられ、電子機器の回路基板（プリント基板）に実装される。
つまり、複数の発光装置１０がプリント基板の所定位置にマウントされ、半田リフロー処理が施される。このようにして、発光装置１０のそれぞれに設けられた外部接続電極２４ａ〜２４ｆが、プリント基板に形成された配線パターン（電極）に接続される。したがって、発光素子１０をそれぞれ所望の色で発光させることにより、カラー画像をディスプレイに表示することができる。
【００２６】
つまり、外部接続電極２４ａ（リード１８ａ）と外部接続電極２４ｄ（リード２０ａ）との間に電圧を印加した場合には、緑色が発光される。また、外部接続電極２４ｂ（リード２０ｂ）と外部接続電極２４ｅ（リード）１８ｂとの間に電圧を印加した場合には、赤色が発光される。さらに、外部接続電極２４ｃ（リード１８ｃ）と外部接続電極２４ｆ（リード２０ｃ）との間に電圧を印加した場合には、青色が発光される。
【００２７】
また、ＬＥＤチップ１４ａ〜１４ｃを２つ以上の組み合わせで発光させることにより、加色法によって他の色を発光（照射）させることもできる。つまり、ＬＥＤ１４ａとＬＥＤ１４ｂとを発光させた場合には、黄色を照射させることができる。また、ＬＥＤ１４ｂとＬＥＤ１４ｃとを発光させた場合には、紫色（マゼンタ）を照射させることができる。さらに、ＬＥＤ１４ａとＬＥＤ１４ｃとを発光させた場合には、藍色（シアン）を照射させることができる。さらにまた、ＬＥＤ１４ａ、１４ｂおよび１４ｃを発光させた場合には、白色を照射させることができる。
【００２８】
このように、発光装置１０は、ＬＥＤ１４ａ〜１４ｃのいずれかを単独で発光させたり、また任意の組み合わせで発光させたりすることにより、複数の色を選択的に発光させることができる。
【００２９】
この実施例によれば、ダイボンディング電極とワイヤボンディング電極とを交互に設けるので、基板面積を有効に利用することができ、従来に比べて基板を小さくすることができる。したがって、発光装置自体を小型化することができる。
このため、面発光装置を含む電子機器も小型化することができる。また、従来と同じ大きさの電子機器を作る場合には、発光装置の数を増やすことができるので、カラー画像の解像度を高くすることができる。
【００３０】
また、ＬＥＤチップ１４ｂは、ＬＥＤ１４ａおよび１４ｃとは極性が反転された構造を有するチップを用いるようにしているので、基板１２の一方側で外部接続電極２４ａ〜２４ｃの極性を揃えることができ、また基板１２の他方側で外部接続電極２４ｄ〜２４ｆの極性を揃えることができる。したがって、電子機器のプリント基板の配線パターンを大幅な変更なしに発光装置１０を使用（実装）することができる。
【００３１】
ただし、上側にｐ層を有し、下側にｎ層を有するＬＥＤチップ１４ｂと下側にｐ層を有し、上側にｎ層を有するＬＥＤチップ１４ａおよび１４ｃとを用いるようにしてよい。
【００３２】
他の実施例の発光装置１０は、上側にｐ層を有し、下側にｎ層を有するＬＥＤチップ１４ａ〜１４ｃを使用し、基板１２、配線パターン１６および外部接続電極２４ｂ、２４ｅを変更して、外部接続電極２４ａ〜２４ｃの極性を揃え、外部接続電極２４ｄ〜２４ｆの極性を揃えるようにした以外は図１実施例と同じであるため、重複した説明は省略する。
【００３３】
図３（Ａ）から分かるように、基板１２の上面１２ａに形成される配線パターン１６は、図２（Ａ）で示した上述の実施例と同じである。つまり、ダイボンディング電極とワイヤボンディング電極とが交互に配置されるように、リード１８ａ〜１８ｃおよびリード２０ａ〜２０ｃが設けられる。
【００３４】
一方、基板１２の裏面１２ｂには、図３（Ｂ）に示すような、外部接続電極２４ａ〜２４ｆが形成される。ただし、外部接続電極２４ａ、２４ｃ、２４ｄおよび２４ｆは、上述の実施例と同じに形成され、基板１２の側面１２ｃを介して対応するリード１８ａ、１８ｃ、２０ａおよび２０ｃにそれぞれ連結される。
【００３５】
外部接続電極２４ｂは、その先端の一部が外部接続電極２４ｅ側に延びて形成され、図３（Ｂ）のIII Ｃ−III Ｃ断面図である図３（Ｃ）に示すような、基板１２に設けられた孔（スルーホール）１２ｄを介してリード１８ｂに連結される。また、外部接続電極２４ｅは、その先端の一部が外部接続電極２４ｂ側に延びて形成され、基板１２に設けられたスルーホール１２ｅを介してリード２０ｂに連結される。
【００３６】
このようにして、基板１２の一方側で外部接続電極２４ａ〜２４ｃの極性を揃えることができ、また基板１２の他方側で外部接続電極２４ｄ〜２４ｆの極性を揃えることもできる。したがって、電子機器のプリント基板に形成された配線パターンを大幅に変更することなく発光装置１０を実装することができる。
【００３７】
なお、他の実施例では、外部電極２４ｂをスルーホール１２ｄを介してリード１８ｂに連結し、外部接続電極２４ｅをスルーホール１２ｅを介してリード２０ｂに連結するようにしてあるが、ＬＥＤチップ１４ｂに対応するリードおよび外部接続電極を図１実施例のように基板１２の側面１２ｃで連結し、他のＬＥＤチップ１４ａおよびＬＥＤチップ１４ｃに対応するリードおよび外部接続を図３（Ｂ）および図３（Ｃ）で示したように連結するようにしてもよい。
【００３８】
他の実施例によれば、上述の実施例と同様にボンディング電極とワイヤボンディング電極とを交互に設けることができので、基板を小さくすることができる。
したがって、発光装置を小型化することができる。
【００３９】
なお、これらの実施例では、外部接続電極２４ａ〜２４ｆを個別に形成するようにしたが、ＬＥＤチップをカソードコモンあるいはアノードコモンにする場合には、外部接続電極２４ａ〜２４ｃあるいは外部接続電極２４ｄ〜２４ｆを一体的に形成すればよい。
【００４０】
また、これらの実施例では、Ｇ、ＲおよびＢを発光するＬＥＤチップ１４ａ、１４ｂおよび１４ｃをボンディングするようにしたが、他の色を発光するＬＥＤチップをボンディングするようにしてもよい。
【００４１】
さらに、これらの実施例では、３つのＬＥＤチップ１４ａ〜１４ｃを備える発光装置１０についてのみ示したが、４つ以上のＬＥＤチップを備える発光装置についても適用することができる。この場合には、ボンディングするＬＥＤチップの個数に応じたダイボンディング電極とワイヤボンディング電極とを基板上に交互に設けるようにすればよい。
【図面の簡単な説明】
【図１】この発明の一実施例を示す図解図である。
【図２】図１実施例に示す基板に形成された配線パターンおよび外部接続電極を示す図解図である。
【図３】この発明の他の実施例に適用される基板、基板に形成された配線パターンおよび外部接続電極を示す図解図である。
【図４】従来の半導体発光装置の一例を示す図解図である。
【符号の説明】
１０ …半導体発光装置
１２ …基板
１４ａ，１４ｂ，１４ｃ …ＬＥＤチップ
１６ …配線パターン
１８ａ，１８ｂ，１８ｃ，２０ａ，２０ｂ，２０ｃ …リード
２２ａ，２２ｂ，２２ｃ …ワイヤ
２４ａ，２４ｂ，２４ｃ，２４ｄ，２４ｅ，２４ｆ …外部接続電極
２６ …透光性樹脂[0001]
[Industrial application fields]
The present invention relates to a semiconductor light emitting device, and more particularly, for example, first, second and third light emitting element chips are die-bonded to first, second and third die bonding electrodes formed on a substrate, and the first, second and third The present invention relates to a semiconductor light emitting device in which wire bonding is performed from a third light emitting element chip to first, second and third wire bonding electrodes and then sealed with a translucent resin.
[0002]
[Prior art]
In this conventional semiconductor light emitting device 1 shown in FIG. 4, light emitting element chips (LED chips) 3a, 3b, and 3c that emit different colors (for example, green, red, and blue) are bonded on a substrate 2 to form an LED. The chips 3a, 3b and 3c are sealed with a light-transmitting resin 4 such as an epoxy resin. That is, the wiring pattern 5 corresponding to each of the LED chips 3a, 3b and 3c is formed on the upper surface 2a of the substrate 2. Specifically, the wiring pattern 5 is formed by die bonding electrodes (leads) 6a, 6b and 6c and wire bonding electrodes (leads) 7a, 7b and 7c. The leads 6a, 6b, 6c, 7a, 7b, and 7c were individually connected to external connection electrodes (not shown) formed on the back surface of the substrate 2 through the side surfaces of the substrate 2. Such a semiconductor light emitting device 1 is applied to an electronic apparatus including a surface light emitting device (not shown) such as a display, for example, and a plurality of semiconductor light emitting devices 1 are mounted on a circuit board (printed circuit board) of the surface light emitting device. The In each of the semiconductor light emitting devices 1, the LED chips 3a, 3b and 3c are selectively lit (emitted) to display a color image.
[0003]
[Problems to be solved by the invention]
However, in this prior art, since the leads 6a, 6b and 6c are formed side by side and the leads 7a, 7b and 7c are formed side by side, the leads 6a, 6b and 6c side become dense between the respective leads. On the leads 7a, 7b and 7c side, the space between the leads is sparse. That is, the area of the substrate 2 could not be used effectively. In other words, the area of the substrate 2 has increased. For this reason, the semiconductor light emitting device 1 itself has become large, and further, the electronic equipment on which the semiconductor light emitting device 1 is mounted has also become large.
[0004]
Therefore, a main object of the present invention is to provide a semiconductor light emitting device that can be miniaturized.
[0005]
[Means for Solving the Problems]
In the present invention, first, second and third light emitting element chips are die-bonded to first, second and third die bonding electrodes formed on a substrate, and the first, second and third light emitting element chips are bonded. In the semiconductor light emitting device in which the first, second and third wire bonding electrodes are wire-bonded to each other and sealed with a translucent resin , the first, second and third die bonding electrodes and An external connection electrode connected to each of the first, second, and third wire bonding electrodes via the side surface of the substrate is provided, and the first die bonding electrode, the second wire bonding electrode, and the third electrode are provided on one side of the upper surface of the substrate. place the die bonding electrode, the first wire bonding electrode, the second die bonding electrode and the third wire bonding electrodes are arranged on the other side, the , First the opposing second and third die bonding electrodes respectively, and wider than the second and third wire bonding electrode, and still another light-emitting element chips emitting element chips die-bonded to the second die bonding electrode A semiconductor light emitting device having a reverse polarity structure .
[0006]
[Action]
In the semiconductor light emitting device of the present invention, the first, second and third LED chips are bonded to the substrate, and these LED chips are sealed with a translucent resin such as an epoxy resin. The first chip is die bonded to the first die bonding electrode and wire bonded to the first wire bonding electrode. The second chip is die bonded to the second die bonding electrode and wire bonded to the second wire bonding electrode. Further, the third chip is die bonded to the third die bonding electrode and wire bonded to the third wire bonding electrode. In such a semiconductor light emitting device, for example, the first die bonding electrode, the second wire bonding electrode, and the third die bonding electrode are disposed on one side of the upper surface of the substrate, and the first wire bonding electrode and the second die are disposed on the other side. A bonding electrode and a third wire bonding electrode are disposed. That is, die bonding electrodes and wire bonding electrodes are provided alternately. Therefore, the substrate area can be effectively used as compared with the case where the die bonding electrode and the wire bonding electrode are separately provided and provided on the counter electrode. That is, the substrate can be made small.
[0007]
For example, on the back surface of the substrate, external connection electrodes connected to the first, second, and third die bonding electrodes and the first, second, and third wire bonding electrodes are provided. Therefore, this semiconductor light emitting device can be mounted on a circuit board (printed circuit board) of an electronic device including a surface light emitting device such as a display.
[0008]
The external connection electrode is connected to the first, second, and third die bonding electrodes and the first, second, and third wire bonding electrodes through the side surface of the substrate.
[0009]
Therefore, if the LED chip die-bonded to the second die-bonding electrode has a reverse polarity structure to the other two LED chips, it can be mounted without significantly changing the wiring pattern of the conventional printed circuit board. .
[0010]
Further, if the substrate is provided with two holes penetrating from the front surface to the back surface, the external connection electrodes are connected to the second die bonding electrode and the second wire through the holes so that the polarities are aligned at both ends of the substrate. It can be connected to a bonding electrode.
[0011]
In this case, the three LED chips having the same structure can be used.
[0012]
For example, if the first, second, and third LED chips that emit red, blue, and green are bonded, each LED chip can emit light alone, and three colors can be selectively emitted. Further, if the LED chip emits light in an arbitrary combination, purple, yellow, indigo or white can be emitted by the additive color method.
[0013]
【The invention's effect】
According to the present invention, since the substrate can be made small, the size of the device itself can be reduced.
[0014]
The above object, other objects, features and advantages of the present invention will become more apparent from the following detailed description of embodiments with reference to the drawings.
[0015]
【Example】
Referring to FIG. 1, a semiconductor light emitting device (hereinafter simply referred to as “light emitting device”) 10 of this embodiment is an insulating substrate (hereinafter simply referred to as “substrate”) 12 formed of glass epoxy or ceramic. including. On the substrate 12, for example, three light emitting element chips (LED chips) 14a, 14b and 14c having different emission colors are bonded.
[0016]
For example, in this embodiment, the LED chip 14a emits green (G), the LED chip 14b emits red (R), and the LED chip 14c emits blue (B). Although not shown, in this embodiment, the LED chips 14a and 14c are formed of LEDs having a pn junction in which the p layer is provided on the upper side and the n layer is provided on the lower side. The p-layer is formed on the lower side, and the n-layer is formed on the LED having a pn junction provided on the upper side.
[0017]
As can be seen from FIG. 2A, a wiring pattern 16 for bonding each of the three LEDs 14a, 14b and 14c is formed on the upper surface 12a of the substrate 12. The wiring pattern 16 is formed of, for example, copper foil and includes die bonding electrodes (leads) 18a, 18b and 18c and wire bonding electrodes (leads) 20a, 20b and 20c. The lead 18a, the lead 20b, and the lead 18c are disposed, and the lead 20a, the lead 18b, and the lead 20c are disposed on the other side. That is, die bonding electrodes and wire bonding electrodes are provided alternately.
[0018]
As shown in FIG. 1, the LED chips 14a, 14b and 14c are bonded to the wiring pattern 16 as described above. Specifically, the LED chip 14a is die-bonded (adhered) to the lead 18a with an adhesive (not shown) such as silver paste, and is bonded wire (hereinafter simply referred to as “wire”) such as a gold wire.
) 22a is wire bonded to the lead 20a. The LED chip 14b is die-bonded to the lead 18b with an adhesive, and is wire-bonded to the lead 20b with a wire 22b. Further, the LED chip 14c is die-bonded to the lead 18c with an adhesive, and is wire-bonded to the lead 20c with a wire 22c.
[0019]
On the other hand, as can be seen from FIG. 2B, external connection electrodes 24a to 24f are formed on the back surface 12b of the substrate 12 corresponding to the three LEDs 14a, 14b and 14c, respectively. As can be seen from FIGS. 2A and 2B, the external connection electrodes 24a to 24f are connected (linked) to the corresponding leads 18a to 18c and the leads 20a to 20c via the side surface 12c of the substrate 12. Is done. Specifically, the lead 18a is connected to the external connection electrode 24a, the lead 20b is connected to the external connection electrode 24b, and the lead 18c is connected to the external connection electrode 24c. The lead 20a is connected to the external connection electrode 24d, the lead 18b is connected to the external connection electrode 24e, and the lead 20c is connected to the external connection electrode 24f.
[0020]
The external connection electrodes 24a to 24f are also formed of copper foil, like the leads 18a to 18c and the leads 20a to 20c.
[0021]
In FIGS. 1 and 2A and 2B, the leads and the external connection electrodes are provided with thicknesses for easy understanding.
[0022]
Further, although the leads 18a to 18c, 24a to 24c and the external connection electrodes 24a to 24f are illustrated to be connected through the through holes provided in the side surface 12c of the substrate 12, the side surfaces are provided without providing the through holes. You may make it connect via 12c.
[0023]
Returning to FIG. 1, the light emitting device 10 also includes a translucent resin 26 such as an epoxy resin, and the translucent resin 26 is formed on the upper surface 12 a side of the substrate 12. That is, the translucent resin 26 seals the LED chips 14a to 14c and the wires 22a to 22c.
[0024]
As can be seen from FIG. 1 and FIGS. 2A and 2B, the leads 18 a to 18 c are arranged so that the translucent resin 26 does not flow to the back surface 12 b side of the substrate 12 when the translucent resin 26 is formed. The leads 20a to 20c are left so as to close the through holes formed in the side surface 12c of the substrate 12.
[0025]
For example, the light emitting device 10 is used in an electronic device (not shown) including a surface light emitting device that displays a color image on a display. For example, the plurality of light emitting devices 10 are arranged in a lattice pattern and mounted on a circuit board (printed board) of an electronic device.
That is, the plurality of light emitting devices 10 are mounted at predetermined positions on the printed circuit board and subjected to solder reflow processing. In this way, the external connection electrodes 24a to 24f provided in each of the light emitting devices 10 are connected to the wiring patterns (electrodes) formed on the printed board. Therefore, a color image can be displayed on the display by causing each light emitting element 10 to emit light in a desired color.
[0026]
That is, when a voltage is applied between the external connection electrode 24a (lead 18a) and the external connection electrode 24d (lead 20a), green light is emitted. Further, when a voltage is applied between the external connection electrode 24b (lead 20b) and the external connection electrode 24e (lead) 18b, red light is emitted. Further, when a voltage is applied between the external connection electrode 24c (lead 18c) and the external connection electrode 24f (lead 20c), blue light is emitted.
[0027]
In addition, by emitting the LED chips 14a to 14c in a combination of two or more, it is possible to emit (irradiate) other colors by the additive method. That is, when the LED 14a and the LED 14b are caused to emit light, yellow can be emitted. Moreover, when LED14b and LED14c are made to light-emit, purple (magenta) can be irradiated. Further, when the LED 14a and the LED 14c are caused to emit light, indigo (cyan) can be irradiated. Furthermore, when the LEDs 14a, 14b, and 14c are caused to emit light, white light can be irradiated.
[0028]
Thus, the light-emitting device 10 can selectively emit a plurality of colors by causing any one of the LEDs 14a to 14c to emit light alone or in any combination.
[0029]
According to this embodiment, since the die bonding electrode and the wire bonding electrode are alternately provided, the substrate area can be used effectively, and the substrate can be made smaller than the conventional one. Therefore, the light emitting device itself can be reduced in size.
For this reason, the electronic device including the surface light emitting device can also be reduced in size. In addition, when an electronic device having the same size as that of a conventional device is manufactured, the number of light emitting devices can be increased, so that the resolution of a color image can be increased.
[0030]
Further, since the LED chip 14b uses a chip having a structure in which the polarity is reversed from that of the LEDs 14a and 14c, the polarities of the external connection electrodes 24a to 24c can be made uniform on one side of the substrate 12, The polarities of the external connection electrodes 24d to 24f can be made uniform on the other side of the substrate 12. Therefore, the light emitting device 10 can be used (mounted) without significant change in the wiring pattern of the printed circuit board of the electronic device.
[0031]
However, the LED chip 14b having the p layer on the upper side and the n layer on the lower side and the LED chips 14a and 14c having the p layer on the lower side and the n layer on the upper side may be used.
[0032]
The light emitting device 10 of another embodiment uses LED chips 14a to 14c having a p layer on the upper side and an n layer on the lower side, and changing the substrate 12, the wiring pattern 16 and the external connection electrodes 24b and 24e. Since the external connection electrodes 24a to 24c have the same polarity and the external connection electrodes 24d to 24f have the same polarity, the redundant description is omitted.
[0033]
As can be seen from FIG. 3A, the wiring pattern 16 formed on the upper surface 12a of the substrate 12 is the same as the above-described embodiment shown in FIG. That is, the leads 18a to 18c and the leads 20a to 20c are provided so that the die bonding electrodes and the wire bonding electrodes are alternately arranged.
[0034]
On the other hand, external connection electrodes 24a to 24f are formed on the back surface 12b of the substrate 12 as shown in FIG. However, the external connection electrodes 24a, 24c, 24d and 24f are formed in the same manner as in the above-described embodiment, and are connected to the corresponding leads 18a, 18c, 20a and 20c via the side surface 12c of the substrate 12, respectively.
[0035]
The external connection electrode 24b is formed such that a part of the tip of the external connection electrode 24b extends toward the external connection electrode 24e, and the substrate 12 as shown in FIG. 3C, which is a sectional view taken along line III-C-IIIC of FIG. It is connected to the lead 18b through a hole (through hole) 12d provided in the lead. The external connection electrode 24e is formed such that a part of its tip extends to the external connection electrode 24b side, and is connected to the lead 20b through the through hole 12e provided in the substrate 12.
[0036]
In this way, the polarities of the external connection electrodes 24 a to 24 c can be made uniform on one side of the substrate 12, and the polarities of the external connection electrodes 24 d to 24 f can be made uniform on the other side of the substrate 12. Therefore, the light emitting device 10 can be mounted without significantly changing the wiring pattern formed on the printed circuit board of the electronic device.
[0037]
In another embodiment, the external electrode 24b is connected to the lead 18b through the through hole 12d, and the external connection electrode 24e is connected to the lead 20b through the through hole 12e. Corresponding leads and external connection electrodes are connected at the side surface 12c of the substrate 12 as in the embodiment of FIG. 1, and the leads and external connections corresponding to the other LED chips 14a and LED chips 14c are shown in FIGS. You may make it connect as shown by C).
[0038]
According to another embodiment, the bonding electrode and the wire bonding electrode can be alternately provided as in the above-described embodiment, and thus the substrate can be made small.
Therefore, the light emitting device can be reduced in size.
[0039]
In these embodiments, the external connection electrodes 24a to 24f are individually formed. However, when the LED chip is set to the cathode common or the anode common, the external connection electrodes 24a to 24c or the external connection electrodes 24d to 24d are used. What is necessary is just to form 24f integrally.
[0040]
In these embodiments, LED chips 14a, 14b, and 14c that emit G, R, and B are bonded, but LED chips that emit other colors may be bonded.
[0041]
Further, in these examples, only the light emitting device 10 including the three LED chips 14a to 14c is shown, but the present invention can also be applied to a light emitting device including four or more LED chips. In this case, die bonding electrodes and wire bonding electrodes corresponding to the number of LED chips to be bonded may be alternately provided on the substrate.
[Brief description of the drawings]
FIG. 1 is an illustrative view showing one embodiment of the present invention;
FIG. 2 is an illustrative view showing a wiring pattern and external connection electrodes formed on the substrate shown in FIG. 1 embodiment;
FIG. 3 is an illustrative view showing a substrate, a wiring pattern formed on the substrate, and external connection electrodes applied to another embodiment of the present invention.
FIG. 4 is an illustrative view showing one example of a conventional semiconductor light emitting device.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 10 ... Semiconductor light-emitting device 12 ... Board | substrate 14a, 14b, 14c ... LED chip 16 ... Wiring pattern 18a, 18b, 18c, 20a, 20b, 20c ... Lead 22a, 22b, 22c ... Wire 24a, 24b, 24c, 24d, 24e, 24f ... external connection electrode 26 ... translucent resin

Claims (2)

第１、第２および第３発光素子チップを、基板上に形成した第１、第２および第３ダイボンディング電極にダイボンディングし、かつ前記第１、第２および第３発光素子チップから第１、第２および第３ワイヤボンディング電極にワイヤボンディングし、その上で透光性樹脂で封止した半導体発光装置において、
前記基板の裏面に、前記第１、第２および第３ダイボンディング電極および前記第１、第２および第３ワイヤボンディング電極のそれぞれと前記基板の側面を介して連結される外部接続電極を備え、
前記基板の上面の一方側に前記第１ダイボンディング電極、前記第２ワイヤボンディング電極および前記第３ダイボンディング電極を配置し、他方側に前記第１ワイヤボンディング電極、前記第２ダイボンディング電極および前記第３ワイヤボンディング電極を配置し、
前記第１、第２および第３ダイボンディング電極をそれぞれ対向する前記第１、第２および第３ワイヤボンディング電極より幅広にし、さらに
前記第２ダイボンディング電極にダイボンディングされる前記発光素子チップを他の前記発光素子チップとは逆極性の構造にしたことを特徴とする、半導体発光装置。The first, second, and third light emitting element chips are die-bonded to first, second, and third die bonding electrodes formed on the substrate, and the first, second, and third light emitting element chips are first bonded. In the semiconductor light-emitting device, which is wire-bonded to the second and third wire-bonding electrodes and then sealed with a translucent resin,
An external connection electrode connected to each of the first, second, and third die bonding electrodes and each of the first, second, and third wire bonding electrodes on a back surface of the substrate through a side surface of the substrate;
The first die bonding electrode, the second wire bonding electrode, and the third die bonding electrode are disposed on one side of the upper surface of the substrate, and the first wire bonding electrode, the second die bonding electrode, and the second die bonding electrode are disposed on the other side. A third wire bonding electrode is disposed ;
Making the first, second and third die bonding electrodes wider than the opposing first, second and third wire bonding electrodes, respectively ;
A semiconductor light-emitting device, wherein the light-emitting element chip die-bonded to the second die bonding electrode has a structure with a polarity opposite to that of the other light-emitting element chips . 前記発光素子チップのそれぞれは異なる光を発光する、請求項１記載の半導体発光装置。Each emit different light of the light emitting element chip, the semiconductor light-emitting device according to claim 1 Symbol placement.
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