TWM586454U - High heat dissipation performance circuit board for semiconductor module - Google Patents

Abstract

A high heat dissipation performance circuit board for semiconductor module includes a ceramic substrate with top and bottom surfaces, at least on through hole formed on the ceramic substrate, a plurality of circuit patterns formed on the top and bottom surfaces of the ceramic substrate and electrically connected via the through hole, at least one semiconductor device set on the ceramic substrate and electrically connected to the plurality of circuit patterns, and a metal heat sink jointed with ceramic substrate on the bottom surface.

Description

Semiconductor module with high heat dissipation efficiency wiring substrate package

This creation is about a semiconductor package, and more specifically, it is a semiconductor module with high heat dissipation efficiency wiring substrate package.

Semiconductor devices perform a wide range of functions, such as signal processing, high-speed computing, transmitting and receiving electromagnetic signals, controlling electronic devices, converting sunlight into electrical energy, and creating visual projections for television displays. Semiconductor devices are found in the fields of entertainment, communications, power conversion, networking, computers, and consumer electronics. Semiconductor devices are also found in military applications, aviation, automotive, industrial controllers, and office equipment.

In today's life, electronics are everywhere. Semiconductor devices are common in modern electronics. Semiconductor devices vary in the number and density of electrical components. Discrete semiconductor devices typically contain more than one type of electrical component, such as light emitting diodes (LEDs), small signal transistors, resistors, capacitors, inductors, and power metal oxide semiconductor field effect transistors (MOSFETs). Integrated semiconductor devices typically contain hundreds to millions of electrical components. Examples of integrated semiconductor devices include microcontrollers, microprocessors, charge-coupled devices (CCD), solar cells, and digital micromirror devices (DMD). The transformation of many electronic products is toward the trend of thinness, miniaturization and versatility. One of the driving forces for this development is electronic packaging technology. With the miniaturization of electronic chips and the requirements of multifunctionality, the integration of chips has become quite complicated, and the packaging technology has accordingly changed with the needs of its products. The evolution from the plastic flat die carrier package used in traditional wireless products to the ball-gate array package used by the central processing unit to the flip-chip package commonly used in current high-end products shows the reform of the packaging industry.

With the rapid development of science and technology, the future electronics industry trend will be towards thin and light, high-speed and multi-functional development, such as the combination of communication cameras, Internet and space technology, etc. In order to these goals, newer process technology and new technology Materials have been continuously developed, and electronic packaging technology has also presented various changes and continuous innovation. Electronic packaging technology refers to assembling integrated circuit (IC) components and other related active and passive electronic components in a system to play the function of this system; the main purposes of electronic packaging are: (1) transmitting electrical energy and signals, (2 ) Provide heat dissipation, (3) load and protection.

The package of integrated circuit (IC) is mainly to protect the chip and to isolate moisture and dust, and the packaged lead frame can be soldered on the printed circuit board (PCB). The materials used in the packaging shell are mainly for cost and heat dissipation. Because integrated circuits generate a large amount of thermal energy during work, especially integrated circuits with more complex structures or smaller process line widths (such as CPU or DSP processing) Device), usually the higher the degree of accumulation, the more dense the complementary metal-oxide-semiconductor (CMOS) device, the greater the thermal energy generated, and the need for better heat-dissipating materials for packaging.

Figure 1 shows a schematic diagram of integrated circuit (IC) components after traditional packaging. Figure 1 (a) shows a side view of the package structure of integrated circuit (IC) components, in which IC 101 is bonded to a heat sink substrate 103, and four surrounding adhesive pads (Bond pad) 101a is connected to the lead frame 107 with gold wire 105. The lead frame 107 is actually several metal pins. The "centralized" electrical signal is "spread out", and then the epoxy resin is used to mold the mold. A molding compound 109 covers the IC 101 and the gold wire 105 to protect the IC element and its connection lines. Figure 1 (c) shows that the IC chip is encapsulated in epoxy resin and connected to a printed circuit board (PCB) through a lead frame. The figure shows the heat dissipation path of the IC chip during operation.

The structure of the lead frame is shown in Figure 1. One end is "centralized" connected to the bond pads around the chip with gold wires, and the other end is "spread apart" connected to the printed circuit board. The circuit (IC) must be connected to the printed circuit board (PCB) in order to work with other integrated circuits (IC). The lead frame is actually several metal pins that “spread together” the “centralized” electrical signals, mainly because the bond pads are made around the chip. The chip is very small, so the adhesive pad is also very small. (Approximately 10μm), but the wiring on the printed circuit board is usually relatively thick (approximately 100μm), so the centralized electrical signals must be dispersed by the lead frame. The disadvantage of using the lead frame is that it can only be used in "wire packaging". Therefore, the lead frame can only be used on integrated circuits with fewer metal pins.

As the size of electronic products is getting smaller and smaller, the power is getting higher and higher, so that the heat generation of electronic components is rising. If the heat from the wafer cannot be removed and dissipated in time, a large amount of heat will be accumulated inside the wafer, and its performance and reliability will be greatly reduced.

In view of this, it is necessary to propose a semiconductor module having a high-heat-dissipation wiring substrate package.

In order to provide a solution to the above problems, the present invention provides a semiconductor module with a high heat dissipation efficiency wiring substrate package, including: a ceramic substrate with upper and lower surfaces; more than one through hole is formed on the ceramic substrate; a plurality of metal circuits A pattern is formed on the upper surface and the lower surface of the ceramic substrate, and is electrically connected through the through hole; at least one integrated circuit element die is disposed on the upper surface of the ceramic substrate and is electrically coupled to the plurality of metal circuits. A pattern; and a metal heat sink is bonded to the ceramic substrate through the lower surface of the ceramic substrate.

In a preferred embodiment, the heat transfer coefficient of the ceramic substrate is greater than 100 W m ^-1 K ^-1 .

In a preferred embodiment, the aforementioned ceramic substrate may be selected from one of aluminum nitride or silicon carbide.

In one embodiment, an insulating layer is formed between the metal circuit pattern formed on the lower surface of the ceramic substrate and the metal heat sink for electrical isolation.

The above-mentioned metal circuit pattern is formed by a vacuum direct sputtering method.

In a preferred embodiment, the above-mentioned method for forming a metal circuit pattern includes: providing a ceramic substrate; pre-processing to clean the ceramic substrate; using a vacuum coating method, sputtering a metal composite layer on the ceramic substrate; Resist coating, and then perform exposure, development, etching, and film removal processes to complete the circuit fabrication; and increase the thickness of the circuit by electroplating deposition; remove the photoresist finish gold Production of the line.

These advantages and other advantages will be clearly understood by the reader from the description of the following preferred embodiments and the scope of patent application.

101‧‧‧IC

103‧‧‧ Thermal Board

101a‧‧‧Bond pad

105‧‧‧Gold Wire

107‧‧‧ lead frame

109‧‧‧ epoxy resin molding compound

200‧‧‧ Insulating ceramic substrate

201‧‧‧Circuit Pattern

(203a, 203b, 203c) ‧‧‧IC components

201a‧‧‧through hole

207‧‧‧Passive components

209‧‧‧Plug-in components

211‧‧‧Soldering

230‧‧‧printed circuit board (PCB)

301, 303, 305, 307, 309, 311‧‧‧ steps

The detailed description of the creation and the schematic diagram of the embodiment described below should make the creation more fully understood; however, it should be understood that this is limited to the reference for understanding the application of the creation, rather than limiting the creation to a specific implementation. Example.

Figure 1 shows a schematic diagram of IC components after conventional packaging of conventional technology; Figure 2 (a) shows a schematic plan view of a semiconductor module with high heat dissipation efficiency of a wiring substrate package according to an embodiment of the present invention; Figures 2 (b)-(c) Fig. 2 (d)-(e) shows a wiring board with a high heat dissipation efficiency and a printed circuit board inlaid on a printed circuit board according to an embodiment of the present invention; (PCB) A schematic cross-sectional view of a semiconductor module encapsulated in a PCB; FIG. 3 shows a direct plate copper (DPC) substrate according to an embodiment of the present invention. The DPC substrate process is taken as an example, and a detailed DPC production flow chart is shown.

The present invention will be described in detail for the specific embodiment of the creation and its viewpoints. Such description is to explain the structure or process of the creation, and it is used for explanation rather than limiting the scope of patent application of the creation. Therefore, in addition to the specific embodiments and preferred implementations in the description, this creation can also be widely implemented in other different embodiments. The following describes the implementation of this creation through specific specific embodiments. Those familiar with this technology can easily understand this creation through the content disclosed in this manual. Efficacy and its advantages. And this creation can also be applied and implemented by other specific embodiments. The details described in this specification can also be applied based on different needs, and various modifications or changes can be made without departing from the spirit of this creation.

An embodiment described in the specification means that a particular feature, method, or characteristic described in relation to this embodiment is included in at least some embodiments. Therefore, the implementation of each aspect of an embodiment or multiple embodiments is not necessarily the same embodiment. In addition, the features, methods, or characteristics related to this creation may be appropriately combined in one or more embodiments.

Plastics, especially epoxy resins, dominate the electronics market until now due to their relatively good economics, but many special areas such as high temperature, linear expansion coefficient mismatch, air tightness, stability, mechanical properties, etc. are obviously Not suitable. Especially in high-power, high-density packaging, the heat generated by electronic components and chips during operation cannot pass through plastics, such as epoxy resin, to effectively dissipate the heat, which will seriously affect the electronic components and chips. Operational efficiency. A large amount of heat will be accumulated inside the chip, and its performance and reliability will be greatly reduced.

With the miniaturization of electronic chips and the requirements of multifunctionality, the integration of chips has become quite complicated, and the packaging technology has accordingly changed with the needs of its products. Nowadays, in the application of electronic components, due to the miniaturization of electronic chips and the requirements of multifunctionalization and high speed, IC chips with different functions, such as RF-IC, digital-IC, and power-IC chips, are often integrated. Into a multi-chip module.

In order to achieve integration into a multi-chip module and solve the heat dissipation problem caused by the operation of IC chips, this creation provides a wiring substrate with high heat dissipation efficiency, which uses an insulating material with a high heat transfer coefficient, and its heat transfer coefficient is> 100Wm ^-1 K ^{-1 is} used as a substrate or embedded in a printed circuit board (PCB) as a highly thermally conductive medium. In a preferred embodiment, it can be an aluminum nitride (AlN) insulating ceramic With a heat transfer coefficient of 170 ~ 230Wm ^-1 K ^-1 , AlN ceramics have high thermal conductivity and are suitable for high-power semiconductor substrates. Natural cooling can achieve the purpose during the heat dissipation process. At the same time, it has good mechanical strength, Excellent electrical performance.

In another preferred embodiment, it can be a silicon carbide (SiC) insulating ceramic, which has a thermal coefficient of 140 ~ 170Wm ^-1 K ^-1 , and has the advantage of a low thermal expansion coefficient, which is consistent with the thermal expansion coefficient of electronic components. Can withstand the deformation caused by external forces, and can reduce electromagnetic interference.

Compared with plastic materials, ceramic materials also play an important role in the electronics industry. It has high resistance, outstanding high frequency characteristics, and has the advantages of high thermal conductivity, good chemical stability, high thermal stability and high melting point. These properties are very needed in the design and manufacture of electronic circuits. Therefore, ceramics are widely used in different thick film, thin film or circuit substrate materials. They can also be used as insulators, as heat conduction paths in circuits with demanding thermal performance, and To manufacture various electronic components, multiple ICs can be soldered on this substrate to bond the die with the substrate circuit in a bonding wire or flip-chip manner to integrate homogeneous or heterogeneous IC functions and achieve high heat dissipation efficiency, combined with PCB and devices in Components on the system to achieve system-level or sub-system-level functional output.

Referring to FIG. 2 (a), a plurality of ICs (203a, 203b, and 203c) can be soldered to this substrate by plating a lead circuit pattern 201 on an insulating ceramic substrate 200, and bonded to the substrate circuit by a bonding wire 205 or a flip-chip method. A structure that integrates homogeneous IC or heterogeneous IC functions, and also integrates other electronic components, such as passive components 207, plug-in components 209, etc., and achieves high heat dissipation efficiency. In a preferred embodiment, as shown in FIG. 2 (b), a schematic cross-sectional structure diagram of a plated wire circuit pattern 201 on an IC component and an insulating ceramic substrate 200 is shown. The plated wire circuit pattern 201 is a copper wire circuit and has a vertical mutual connection. The through-hole 201a is used to connect the copper wires on the upper and lower surfaces of the substrate. IC components (203a, 203b), passive components 207, and plug-in components 209 are soldered to the circuit 201 of the substrate with solder 211. This occurs during the operation of the IC. The heat can be conducted through the insulating ceramic substrate 200 to a metal heat sink (not shown) bonded to the external ceramic substrate 200, and an insulating structure (not shown) is used to isolate the plated wire circuit pattern 201 from the heat sink.

For another preferred embodiment, referring to FIG. 2 (c), a schematic cross-sectional structure diagram of a plated wire circuit pattern 201 on an IC element and an insulating ceramic substrate 200 is shown. The plated wire circuit pattern 201 is a copper wire circuit and has a vertical The interconnect via 201a connects the copper wires on the upper and lower surfaces of the substrate. IC components (203a, 203b), passive components 207, and plug-in components 209 are soldered to the circuit 201 of the substrate with solder 211. IC components The grains of (203a, 203b) are filled and solidified with liquid glue 215 in the stopper 213 to protect the grains of the IC device (203a, 203b). The heat generated during the operation of the IC can be conducted to the metal heat sink (not shown) bonded to it through the insulating ceramic substrate 200 and outward. discharge.

For another preferred embodiment, referring to Figs. 2 (d)-(e), which respectively correspond to Figs. 2 (b)-(c), show the IC components (203a, 203b) and the electroplated wires on the insulating ceramic substrate 200. Circuit pattern 201 is a schematic cross-sectional structure diagram embedded in a printed circuit board (PCB) 230. The circuit pattern 201 is a copper wire circuit and has vertical interconnection vias 201a to connect copper on the upper and lower surfaces of the substrate. Line circuit circuit pattern 201. Figures 2 (d)-(e) show IC components (203a, 203b), passive components 207, and plug-in components 209, etc. The components are soldered to the circuit 201 of the substrate with solder 211; and Figure 2 The IC element die (203a, 203b) in (e) is filled and solidified with liquid glue 215 in the stopper 213 to protect the IC element die (203a, 203b). The heat generated during the operation of the IC can be conducted through the insulating ceramic substrate 200 to a metal heat sink (not shown) bonded to the ceramic substrate 200 and discharged to the outside.

The introduced insulation layer (insulating ceramic substrate 200) needs to be capable of solving thermoelectric separation to achieve the best heat dissipation effect. In a preferred embodiment, the insulating ceramic substrate 200 may be a direct plate copper (DPC) substrate. The ceramic substrate that can solve the problem of thermoelectric separation should have the following characteristics: first, it must have high thermal conductivity, its thermal conductivity is several orders of magnitude higher than that of resin; second, it must have high insulation strength; third, high circuit analysis It can be co-connected or flipped vertically with the chip without problems; the fourth is the high surface flatness and there will be no voids when soldering; the fifth is the high adhesion of ceramics and metals; The sixth is the vertical interconnection vias, so that the chip package can be realized, and the circuit is led from the back to the front.

DPC (Direct Plate Copper) is also called direct copper substrate. The DPC substrate manufacturing process is taken as an example. The detailed DPC production flow chart is shown in Figure 3: First, the ceramic substrate is pre-treated and cleaned (step 301), and the thin film professional manufacturing technology-vacuum coating is used. Methods, such as vacuum sputtering, sputter bonding to a copper-metal composite layer on a ceramic substrate (step 303), and then covering it with a photoresist of yellow light lithography (step 305), and then performing exposure, development, etching, and film removal processes to complete the circuit Manufacture (step 307), and finally increase the thickness of the circuit by electroplating / electroless plating (step 309). After the photoresist is removed, the metallization circuit is completed (step 311).

Ceramic circuit boards have the following advantages:

(1) Higher thermal conductivity: The thermal conductivity of traditional aluminum-based circuit board MCPCB is 1 ~ 2W m ^-1 K ^-1 , and the thermal conductivity of copper itself is 383.8W m ^-1 K ^-1 but the insulation layer The thermal conductivity is only about 1.0W m ^-1 K ^-1 and a better one can reach 1.8W m ^-1 K ^-1 . Thermal conductivity of alumina ceramics: 15 ~ 35W m ^-1 K ^-1 , thermal conductivity of aluminum nitride ceramics: 170 ~ 230W m ^-1 K ^-1 , thermal conductivity of copper-based circuit board 2W m ^-1 K ^-1 ; Aluminum / copper-based circuit board: Aluminum has high thermal conductivity, but there is an insulating layer on the aluminum / copper-based circuit board, which causes the thermal conductivity of the entire board to decrease. We can replace the insulating layer with a ceramic base, with aluminum / copper as the substrate, and a ceramic base as the insulating layer.

(2) More matched thermal expansion coefficients: The thermal expansion coefficients of ceramics and wafers are close to each other, which will not cause too much deformation when the temperature difference changes sharply, causing problems such as circuit desoldering and internal stress.

(3) Stronger, lower resistance metal film layer: The bonding strength between the metal layer and the ceramic substrate on the product is high, which can reach a maximum of 45 MPa (greater than the strength of the 1 mm thick ceramic sheet itself); the metal layer has good conductivity, for example, The volume resistivity of the obtained copper is less than 2.5 × 10 ^-6 Ω. cm, the heat is small when the current passes.

The above description is a preferred embodiment of this creation. Artists in this field should be able to understand that it is used to describe this creation and not to limit the scope of patent rights claimed by this creation. The scope of its patent protection shall depend on the scope of the attached patent application and its equivalent fields. Anyone skilled in this field, without departing from the spirit or scope of this patent, changes or retouches are equivalent changes or designs made under the spirit disclosed in this creation, and should be included in the scope of patent application below Inside.

Claims (10)

A semiconductor module with a high heat dissipation efficiency wiring substrate package includes: a ceramic substrate having upper and lower surfaces; more than one through hole is formed on the ceramic substrate; and a plurality of metal circuit patterns are formed on the ceramic substrate. The surface and the lower surface are in electrical communication with each other through the through hole; at least one integrated circuit element die is disposed on the upper surface of the ceramic substrate and is electrically coupled to the plurality of metal circuit patterns; and a metal The heat sink is bonded to the ceramic substrate through the lower surface of the ceramic substrate. According to the request for the semiconductor module packaged with a high-heat-dissipation efficiency wiring substrate package described in item 1, wherein the above-mentioned ceramic substrate has a heat transfer coefficient greater than 100 W m ^-1 K ^-1 . According to the request for the semiconductor module packaged with a high-heat-dissipation wiring substrate package as described in item 1, the ceramic substrate may be selected from one of aluminum nitride or silicon carbide. According to the request for the semiconductor module packaged with a high-heat-dissipation wiring substrate package according to item 1, wherein the metal circuit pattern formed on the lower surface of the ceramic substrate and the metal heat sink have an insulating layer for As electrically isolated. According to the request for the semiconductor module with high heat dissipation efficiency of the wiring substrate package described in item 1, wherein the above-mentioned metal circuit pattern is formed by a vacuum direct sputtering method. According to the request for the semiconductor module with high heat dissipation efficiency wiring substrate package described in item 1, wherein the above-mentioned ceramic substrate is embedded in a printed circuit board having upper and lower surfaces, wherein the printed circuit board includes: more than one A through hole is formed on the printed circuit board; a plurality of metal circuit patterns are formed on the upper surface and the lower surface of the printed circuit board, and are electrically communicated with each other through the through hole. According to the request for the semiconductor module packaged with a high-heat-dissipation wiring substrate package according to item 5, wherein the method for forming a metal circuit pattern includes: providing a ceramic substrate; pre-processing to clean the ceramic substrate; using a vacuum coating method, A metal composite layer is sputtered on the ceramic substrate; it is covered with a photoresist of yellow light lithography, and then exposed, developed, etched, and film-removed to complete the circuit production; and the thickness of the circuit is increased by electroplating and deposition; the photoresist is removed to complete the metallization The making of the line. According to the request for the semiconductor module with high heat dissipation efficiency of the wiring substrate package described in item 1, wherein the semiconductor module further includes at least one interposer component disposed on the upper surface of the ceramic substrate and electrically coupled to the ceramic substrate. A plurality of metal circuit patterns. According to the request for the semiconductor module with high heat dissipation efficiency of the wiring substrate package described in item 1, wherein the semiconductor module further includes at least one passive component disposed on the upper surface of the ceramic substrate and electrically coupled to the plurality of Metal circuit pattern. According to the request for the semiconductor module with high heat dissipation efficiency of the wiring substrate package described in item 6, wherein the semiconductor module further includes at least a passive component or a plug-in component disposed on the upper surface of the printed circuit board, and The plurality of metal circuit patterns are electrically coupled to the printed circuit board.