TWM581289U - Batch wafer wet treatment device - Google Patents

Batch wafer wet treatment device Download PDF

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Publication number
TWM581289U
TWM581289U TW108201102U TW108201102U TWM581289U TW M581289 U TWM581289 U TW M581289U TW 108201102 U TW108201102 U TW 108201102U TW 108201102 U TW108201102 U TW 108201102U TW M581289 U TWM581289 U TW M581289U
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Taiwan
Prior art keywords
substrate
lifting
horizontal
module
driving
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TW108201102U
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Chinese (zh)
Inventor
黃立佐
吳進原
張修凱
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弘塑科技股份有限公司
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Priority to TW108201102U priority Critical patent/TWM581289U/en
Publication of TWM581289U publication Critical patent/TWM581289U/en

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Abstract

A batch wafer wet treatment device includes a tank body, a wafer lifting mechanism, a wafer rotating mechanism and a main control module. The tank is configured for accommodating a cassette and a wafer located in the cassette. The wafer lifting mechanism is disposed on the tank body to lift and lower the wafer in the wafer cassette and the wafer cassette. The wafer rotating mechanism is disposed on the wafer lifting mechanism and is configured for contacting and driving the wafer for rotation. The main control module is connected to the wafer lifting mechanism and the wafer rotating mechanism, and controls lifting of the wafer lifting mechanism and rotation of the wafer rotating mechanism. The wafer can be uniformly etched by controlling the level and rotational speed of the wafer relative to the etchant in the bath.

Description

批次基板濕式處理裝置 Batch substrate wet processing device

本新型關於基板濕蝕刻的技術領域,尤指一種批次基板濕式處理裝置,其可提升基板蝕刻的均勻度,避免基板局部區域蝕刻完全,而另外的局部區域卻蝕刻不足,造成基板成品的品質及良率下降的問題。 The invention relates to a technical field of wet etching of a substrate, in particular to a batch substrate wet processing device, which can improve the uniformity of substrate etching, avoiding complete etching of a partial region of the substrate, and insufficient etching of another partial region, resulting in a finished substrate. The problem of declining quality and yield.

現有的濕式工作台(Wet Bench)批次基板槽式浸泡方法,通常將裝有基板(或晶圓)之晶舟放置於一載有蝕刻液的槽體內,進行浸泡式循環蝕刻。然而,上述蝕刻方式,由於具有下列缺點。 In the conventional wet bench (Wet Bench) batch substrate slot immersion method, a wafer boat equipped with a substrate (or wafer) is usually placed in a tank carrying an etchant to perform immersion cycle etching. However, the above etching method has the following disadvantages.

1.槽體內流場不均勻性,造成基板蝕刻的均勻度不理想。 1. The flow field inhomogeneity in the tank causes the uniformity of substrate etching to be unsatisfactory.

2.晶舟會造成藥水循環之死角,使得基板某些部分無法接觸蝕刻藥水,進一步造成基板蝕刻的均勻度降低。 2. The boat can cause the dead angle of the syrup cycle, so that some parts of the substrate can not contact the etching syrup, which further reduces the uniformity of substrate etching.

3.槽式浸泡方法之先天缺點,在於裝有基板之晶舟向下浸入槽體內時,基板底部會最先接觸到蝕刻液,當晶舟向上脫離槽體時,基板底部最後脫離蝕刻液,因此基板底部蝕刻時間最長,而基板頂部蝕刻時間最短,進一步造成基板蝕刻的均勻度不佳。 3. The inconvenience of the trough immersion method is that when the crystal boat with the substrate is immersed into the trough body, the bottom of the substrate will first contact the etching liquid. When the boat is lifted off the trough body, the bottom of the substrate is finally separated from the etching liquid. Therefore, the etching time at the bottom of the substrate is the longest, and the etching time at the top of the substrate is the shortest, which further causes poor uniformity of substrate etching.

由於上述批次基板槽式浸泡方法的數項缺點,導致基板蝕刻的均勻度不佳,進而導致基板成品的良率降低。 Due to several shortcomings of the above-mentioned batch substrate trench immersion method, the uniformity of substrate etching is not good, and the yield of the finished substrate is lowered.

本新型創作人有鑑於現有批次基板槽式蝕刻方法對基板蝕刻的均勻度不理想的問題,改良其不足與缺失,進而創作出一種批次基板濕式處理裝置。 The novel creator has created a batch substrate wet processing device in view of the problem that the uniformity of substrate etching is not ideal due to the conventional batch substrate trench etching method, and the defects and defects thereof are improved.

本新型主要目的在於提供一種批次基板濕式處理裝置,其可提升基板蝕刻的均勻度,避免基板局部區域蝕刻完全,而另外的局部區域卻蝕刻不足,造成基板成品的品質及良率下降的問題。 The main purpose of the present invention is to provide a batch substrate wet processing device which can improve the uniformity of substrate etching, avoiding partial etching of the substrate, and insufficient etching of other local regions, resulting in deterioration of the quality and yield of the finished substrate. problem.

為達上述目的,本新型批次基板濕式處理裝置包括: 一槽體,在該槽體內形成有一容槽,該容槽用於盛載蝕刻液,且用於容納晶舟以及位於該晶舟中的基板; 一基板升降機構,設置在該槽體上,且包括一固定座、一升降驅動模組以及一升降座,該固定座固定設置在該槽體外,該升降驅動模組以可作動方式設置在該固定座上,該升降座固定設置在該升降驅動模組上,位於該容槽內,且可受到該升降驅動模組的驅動而相對該槽體上升到容槽外或是相對該槽體下降到該容槽內,該升降座用於承托該晶舟及該晶舟中的基板; 一基板旋轉機構,設置在該基板升降機構的該升降座上,且包括一旋轉驅動模組、一傳動組件以及一從動旋轉組件,該旋轉驅動模組固定設置在該升降座上,該傳動組件連接該旋轉驅動模組並可受到該旋轉驅動模組的驅動而作動,該從動旋轉組件設置在該升降座上,連接到該傳動組件,且可受到該傳動組件的驅動而旋轉,該從動旋轉組件用於接觸並帶動該基板進行旋轉;以及 一主控模組,連接該基板升降機構以及該基板旋轉機構,且 控制該基板升降機構的升降以及該基板旋轉機構的旋轉。 In order to achieve the above object, the novel batch substrate wet processing apparatus comprises: a tank body having a cavity formed therein for holding an etchant and for accommodating a boat and a substrate located in the boat; a substrate lifting mechanism is disposed on the slot body, and includes a fixing base, a lifting drive module and a lifting base. The fixing base is fixedly disposed outside the slot, and the lifting driving module is movably disposed on the The lifting base is fixedly disposed on the lifting and driving module, is located in the receiving slot, and can be driven by the lifting and driving module to rise relative to the slot body or descend relative to the slot body In the tank, the lifting seat is used to support the wafer boat and the substrate in the boat; a substrate rotating mechanism is disposed on the lifting base of the substrate lifting mechanism, and includes a rotating driving module, a transmission component and a driven rotating component, wherein the rotating driving module is fixedly disposed on the lifting seat, the transmission The component is coupled to the rotating driving module and is actuated by the driving of the rotating driving module. The driven rotating component is disposed on the lifting base, is connected to the driving component, and is rotatable by the driving component. a driven rotating assembly for contacting and driving the substrate for rotation; a main control module connecting the substrate lifting mechanism and the substrate rotating mechanism, and The lifting and lowering of the substrate elevating mechanism and the rotation of the substrate rotating mechanism are controlled.

在本新型一實施例中,該升降驅動模組為一油壓/氣壓缸,在該油壓/氣壓缸上以可伸縮方式設置一作動桿,該作動桿連接該升降座。 In an embodiment of the present invention, the lift drive module is a hydraulic/pneumatic cylinder, and an actuating rod is disposed on the hydraulic/pneumatic cylinder in a telescopic manner, and the actuating rod is connected to the lift base.

在本新型一實施例中,該升降座上形成有一垂直板體,在該垂直板體底端形成有一水平托板以用於承托該晶舟。 In an embodiment of the present invention, a vertical plate body is formed on the lifting seat, and a horizontal plate is formed at the bottom end of the vertical plate body for supporting the boat.

在本新型一實施例中,該旋轉驅動模組為一驅動馬達而具有一驅動軸;該傳動組件包括一垂直傳動桿以及一水平傳動軸,該垂直傳動桿以可旋轉方式貫穿設置在該垂直板體上,且與該驅動軸嚙合,該水平傳動軸與該垂直傳動桿嚙合;該從動旋轉組件包括二水平旋轉帶動桿,該二水平旋轉帶動桿與該水平傳動軸嚙合,在各該水平旋轉帶動桿上形成有一接觸帶動部以用於接觸並且帶動該基板進行旋轉。 In an embodiment of the present invention, the rotary drive module has a drive shaft for a drive motor; the drive assembly includes a vertical drive rod and a horizontal drive shaft, the vertical drive rod is rotatably disposed through the vertical a horizontal drive shaft that meshes with the vertical drive rod; the driven rotary assembly includes two horizontal rotary drive rods, and the two horizontal rotary drive rods mesh with the horizontal drive shaft A horizontal driving rotating rod is formed with a contact driving portion for contacting and driving the substrate to rotate.

在本新型一實施例中,該二水平旋轉帶動桿位於同一水平位置上。 In an embodiment of the present invention, the two horizontal rotating rods are located at the same horizontal position.

在本新型一實施例中,該接觸帶動部上形成有多個軸向排列的摩擦肋條。 In an embodiment of the present invention, the contact driving portion is formed with a plurality of axially arranged friction ribs.

在本新型一實施例中,該驅動軸與該垂直傳動桿之間透過二傘形齒輪相互嚙合;該垂直傳動桿與該水平傳動軸之間透過二傘形齒輪相互嚙合;該水平傳動軸與各該水平旋轉帶動桿之間透過二齒輪相互嚙合。 In an embodiment of the present invention, the drive shaft and the vertical transmission rod are in mesh with each other through the two bevel gears; the vertical transmission rod and the horizontal transmission shaft are meshed with each other through the two bevel gears; Each of the horizontal rotating belts is meshed with each other through the two gears.

在本新型一實施例中,該批次基板濕式處理裝置進一步包括一蝕刻速率資料庫模組,該蝕刻速率資料庫模組連接該主控模組,且用於提供該基板各部位受到蝕刻的速率的歷史資料。 In an embodiment of the present invention, the batch substrate wet processing apparatus further includes an etch rate database module, the etch rate database module is coupled to the main control module, and is configured to provide etching of various portions of the substrate Historical data on the rate.

本新型另一目的在於提供一種批次基板濕式處理裝置,包 括:一槽體,在該槽體內形成有一容槽,該容槽用於盛載蝕刻液,且用於容納晶舟以及位於該晶舟中的基板;一基板升降機構,設置在該槽體上,且包括一固定座、一升降驅動模組以及一升降座,該固定座固定設置在該槽體外,該升降驅動模組以可作動方式設置在該固定座上,該升降座固定設置在該升降驅動模組上,位於該容槽內,且可受到該升降驅動模組的驅動而相對該槽體上升到容槽外或是相對該槽體下降到該容槽內,該升降座用於承托該晶舟及該晶舟中的基板;一基板旋轉機構,設置在該基板升降機構的該升降座上,且包括一旋轉驅動模組、一傳動組件以及一從動旋轉組件,該旋轉驅動模組固定設置在該升降座上,該傳動組件連接該旋轉驅動模組並可受到該旋轉驅動模組的驅動而作動,該從動旋轉組件設置在該升降座上,連接到該傳動組件,且可受到該傳動組件的驅動而旋轉,該從動旋轉組件用於接觸並帶動該基板進行旋轉;以及一主控模組,連接該基板升降機構以及該基板旋轉機構,且控制該基板升降機構的升降以及該基板旋轉機構的旋轉;其中,該升降座上形成有一垂直板體,在該垂直板體底端形成有一水平托板以用於承托該晶舟;其中,該旋轉驅動模組為一驅動馬達而具有一驅動軸;該傳動組件包括一垂直傳動桿以及一水平傳動軸,該垂直傳動桿以可旋轉方式貫穿設置在該垂直板體上,且與該驅動軸嚙合,該水平傳動軸與該垂直傳動 桿嚙合;該從動旋轉組件包括二水平旋轉帶動桿,該二水平旋轉帶動桿與該水平傳動軸嚙合,在各該水平旋轉帶動桿上形成有一接觸帶動部以用於接觸並且帶動該基板進行旋轉;其中,該二水平旋轉帶動桿位於同一水平位置上。 Another object of the present invention is to provide a batch substrate wet processing device, which comprises a tank body is formed in the tank body, a pocket is formed for holding the etching liquid, and is used for accommodating the boat and the substrate in the boat; a substrate lifting mechanism is disposed in the tank body And comprising a fixed seat, a lifting drive module and a lifting seat, the fixing seat is fixedly disposed outside the slot, the lifting driving module is movably disposed on the fixing seat, and the lifting seat is fixedly disposed on the The lifting drive module is located in the receiving slot and can be driven by the lifting driving module to rise outside the receiving slot with respect to the slot body or descend into the receiving slot relative to the slot body. Supporting the wafer boat and the substrate in the wafer boat; a substrate rotating mechanism disposed on the lifting platform of the substrate lifting mechanism, and comprising a rotary driving module, a transmission component and a driven rotating component, The rotary drive module is fixedly disposed on the lift base, the drive assembly is coupled to the rotary drive module and is actuated by the rotary drive module, and the driven rotary assembly is disposed on the lift base and connected to the drive Component And rotating by the driving component, the driven rotating component is configured to contact and drive the substrate to rotate; and a main control module, the substrate lifting mechanism and the substrate rotating mechanism are connected, and the substrate lifting mechanism is controlled And a rotation of the substrate rotating mechanism; wherein a vertical plate body is formed on the lifting seat, and a horizontal plate is formed at a bottom end of the vertical plate body for supporting the boat; wherein the rotating driving module a drive shaft for a drive motor; the drive assembly includes a vertical drive rod and a horizontal drive shaft rotatably disposed on the vertical plate body and engaged with the drive shaft, the level Drive shaft and the vertical drive a rod engaging; the driven rotating assembly includes two horizontal rotating driving rods, the two horizontal rotating driving rods are engaged with the horizontal driving shaft, and a contact driving portion is formed on each of the horizontal rotating driving rods for contacting and driving the substrate Rotation; wherein the two horizontal rotations are in the same horizontal position.

在本新型一實施例中,該接觸帶動部上形成有多個軸向排列的摩擦肋條。 In an embodiment of the present invention, the contact driving portion is formed with a plurality of axially arranged friction ribs.

在本新型一實施例中,該驅動軸與該垂直傳動桿之間透過二傘形齒輪相互嚙合;該垂直傳動桿與該水平傳動軸之間透過二傘形齒輪相互嚙合;該水平傳動軸與各該水平旋轉帶動桿之間透過二齒輪相互嚙合。 In an embodiment of the present invention, the drive shaft and the vertical transmission rod are in mesh with each other through the two bevel gears; the vertical transmission rod and the horizontal transmission shaft are meshed with each other through the two bevel gears; Each of the horizontal rotating belts is meshed with each other through the two gears.

在本新型一實施例中,該批次基板濕式處理裝置進一步包括一蝕刻速率資料庫模組,該蝕刻速率資料庫模組連接該主控模組,且用於提供該基板各部位受到蝕刻的速率的歷史資料。 In an embodiment of the present invention, the batch substrate wet processing apparatus further includes an etch rate database module, the etch rate database module is coupled to the main control module, and is configured to provide etching of various portions of the substrate Historical data on the rate.

藉由上述技術手段,本新型批次基板濕式處理裝置根據基板中心部及周緣部的蝕刻速率不同,控制該基板升降到該中心部的頂緣或底緣切齊蝕刻液的液面並使環繞在該中心部外圍的該周緣部局部位於該蝕刻液液面上方,使得該基板能夠對蝕刻速率較低的中心部或周圓部進行正向蝕刻補償,而對蝕刻速率較高的另一部分進行負向蝕刻補償,進而增進基板蝕刻的均勻度,並提高基板成品良率。 According to the above technical means, the batch substrate wet processing apparatus of the present invention controls the substrate to be raised and lowered to the top edge or the bottom edge of the center portion to align the liquid surface of the etching liquid according to the etching rate of the central portion and the peripheral portion of the substrate. The peripheral portion surrounding the periphery of the center portion is partially located above the etching liquid level, so that the substrate can perform forward etching compensation for the center portion or the circumference portion with a lower etching rate, and another portion with a higher etching rate. Negative etching compensation is performed to further improve the uniformity of substrate etching and improve substrate yield.

10‧‧‧槽體 10‧‧‧

100‧‧‧容槽 100‧‧‧ 容容

20‧‧‧基板升降機構 20‧‧‧Substrate lifting mechanism

21‧‧‧固定座 21‧‧‧ Fixed seat

22‧‧‧滑軌 22‧‧‧Slide rails

23‧‧‧滑塊 23‧‧‧ Slider

24‧‧‧升降驅動模組 24‧‧‧ Lifting drive module

25‧‧‧升降座 25‧‧‧ Lifting seat

251‧‧‧垂直板體 251‧‧‧Vertical board

30‧‧‧晶舟 30‧‧‧The boat

40‧‧‧基板旋轉機構 40‧‧‧Substrate rotation mechanism

400‧‧‧傘形齒輪 400‧‧‧Umbrella gear

41‧‧‧旋轉驅動模組 41‧‧‧Rotary drive module

42‧‧‧垂直傳動桿 42‧‧‧Vertical transmission rod

43‧‧‧水平傳動軸 43‧‧‧ horizontal drive shaft

45‧‧‧水平旋轉帶動桿 45‧‧‧ horizontal rotating rod

430、450‧‧‧齒輪 430, 450‧‧‧ gears

455‧‧‧接觸帶動部 455‧‧‧Contact Drive Department

60‧‧‧蝕刻速率資料庫模組 60‧‧‧etch rate database module

70‧‧‧主控模組 70‧‧‧Master Module

80‧‧‧液面 80‧‧‧ liquid level

90‧‧‧基板 90‧‧‧Substrate

91‧‧‧中心部 91‧‧‧ Central Department

912‧‧‧頂緣 912‧‧‧Top edge

911‧‧‧底緣 911‧‧‧ bottom edge

92‧‧‧周緣部 92‧‧‧The Peripheral Department

S01、S02、S03、S04‧‧‧步驟 S01, S02, S03, S04‧‧ steps

圖1為本新型批次基板濕式處理裝置、晶舟、基板的立體外觀圖。 1 is a perspective view of a batch substrate wet processing apparatus, a boat, and a substrate.

圖2為本新型批次基板濕式處理裝置的主控模組、基板升降 機構、基板旋轉機構以及蝕刻速率資料庫模組的架構方塊圖。 Figure 2 is the main control module and substrate lifting of the batch substrate wet processing device. Architecture block diagram of the mechanism, substrate rotation mechanism, and etch rate database module.

圖3為本新型批次基板濕式處理裝置、晶舟、基板的立體剖視圖。 3 is a perspective cross-sectional view of the batch substrate wet processing apparatus, the boat, and the substrate.

圖4為本新型批次基板濕式處理裝置、晶舟、基板的立體剖視操作示意圖。 4 is a schematic perspective view showing the operation of the batch substrate wet processing device, the boat, and the substrate.

圖5為本新型批次基板濕式處理裝置、晶舟、基板的正面剖視圖。 Fig. 5 is a front cross-sectional view showing the batch substrate wet processing apparatus, wafer boat, and substrate of the present invention.

圖6為本新型批次基板濕式處理裝置、晶舟、基板的正面剖視操作示意圖。 6 is a front cross-sectional view showing the operation of the batch substrate wet processing apparatus, the boat, and the substrate.

圖7為本新型批次基板濕式處理裝置省略槽體及升降座的立體外觀圖。 Fig. 7 is a perspective view showing the trough body and the lifting base of the batch substrate wet processing apparatus of the present invention.

圖8為本新型批次基板濕式處理裝置省略槽體及升降座的立體外觀操作示意圖。 FIG. 8 is a schematic perspective view showing the operation of the batch substrate wet processing apparatus omitting the tank body and the lifting seat.

圖9為本新型批次基板濕式處理裝置的傳動組件及從動旋轉組件的放大立體外觀圖。 9 is an enlarged perspective view of the transmission assembly and the driven rotating assembly of the batch substrate wet processing apparatus of the present invention.

圖10為本新型批次基板濕式處理裝置的傳動組件及從動旋轉組件的另一放大立體外觀圖。 10 is another enlarged perspective view of the transmission assembly and the driven rotating assembly of the batch substrate wet processing apparatus of the present invention.

圖11為本新型批次基板濕式處理方法的步驟流程圖。 Figure 11 is a flow chart showing the steps of the wet processing method of the batch substrate of the present invention.

圖12為本新型批次基板濕式處理方法的執行示意圖,顯示當該基板的該中心部的蝕刻速率高於該周緣部的蝕刻速率時,該基板高度調整步驟及該基板旋轉步驟的執行狀況。 12 is a schematic view showing the execution of the wet processing method of the batch substrate of the present invention, showing the substrate height adjustment step and the execution state of the substrate rotation step when the etching rate of the central portion of the substrate is higher than the etching rate of the peripheral portion .

圖13為本新型批次基板濕式處理方法的執行示意圖,顯示當 該基板的該周緣部的蝕刻速率高於該中心部的蝕刻速率時,該基板高度調整步驟及該基板旋轉步驟的執行狀況。 13 is a schematic view showing the execution of the wet processing method of the batch substrate of the present invention, showing When the etching rate of the peripheral portion of the substrate is higher than the etching rate of the central portion, the substrate height adjusting step and the execution state of the substrate rotating step.

請參照圖1至圖3,本新型批次基板濕式處理裝置包括:一槽體10、一基板升降機構20、一基板旋轉機構40、一主控模組70以及一蝕刻速率資料庫模組60。 Referring to FIG. 1 to FIG. 3 , the batch substrate wet processing apparatus comprises: a tank body 10 , a substrate lifting mechanism 20 , a substrate rotating mechanism 40 , a main control module 70 , and an etching rate database module . 60.

該槽體10內形成有一容槽100,該容槽100用於盛載蝕刻液,且用於容納晶舟30以及位於該晶舟30中的基板(或晶圓)90。 A cavity 100 is formed in the tank body 10 for holding the etching liquid and for accommodating the boat 30 and the substrate (or wafer) 90 located in the boat 30.

該基板升降機構20設置在該槽體10上,且包括一固定座21、一升降驅動模組24以及一升降座25。 The substrate lifting mechanism 20 is disposed on the slot body 10 and includes a fixing base 21, a lifting drive module 24 and a lifting base 25.

該固定座21固定設置在該槽體10外,可透過螺栓或是鉚釘等固定件而固定設置在該槽體10上。在本新型一實施例中,該固定座21與該槽體10是共同設置在其他設備或台座上。 The fixing base 21 is fixedly disposed outside the groove body 10, and can be fixedly disposed on the groove body 10 through a fixing member such as a bolt or a rivet. In an embodiment of the present invention, the fixing base 21 and the trough body 10 are disposed together on other equipment or pedestals.

請參照圖3、5及7,該升降驅動模組24以可作動方式設置在該固定座21上。 Referring to FIGS. 3, 5 and 7, the lift drive module 24 is movably disposed on the mount 21.

該升降座25固定設置在該升降驅動模組24上,位於該容槽100內,且可受到該升降驅動模組24的驅動而相對該槽體10上升到容槽100外或是相對該槽體10下降到該容槽100內。該升降座25用於承托晶舟30及該晶舟30中的基板90。在圖3、5及7中,該升降座25是位於較下方位置,使得該晶舟30及該基板90能位於蝕刻液的較深處而完全被蝕刻液浸泡。請進一步參照圖4、6及8,在圖4、6及8中,該升降座25被上升到位於較上方位置,使得該晶舟30及該基板90能位於蝕刻液的較淺處或是上方處而部分或完全 脫離蝕刻液。 The lifting base 25 is fixedly disposed on the lifting and lowering drive module 24, and is located in the receiving slot 100, and can be driven by the lifting and lowering driving module 24 to rise relative to the slot body 10 or to the slot 100. The body 10 is lowered into the pocket 100. The lifting seat 25 is used to support the wafer boat 30 and the substrate 90 in the boat 30. In Figures 3, 5 and 7, the lifter 25 is located at a lower position such that the boat 30 and the substrate 90 can be located deeper into the etchant and completely immersed in the etchant. 4, 6 and 8, in FIG. 4, 6 and 8, the lifting seat 25 is raised to an upper position so that the boat 30 and the substrate 90 can be located at a shallower level of the etching solution or Above and partially or completely Remove the etchant.

在本新型一實施例中,該升降驅動模組24為一油壓/氣壓缸,在該油壓/氣壓缸上以可伸縮方式設置一作動桿241,如圖7所示,該作動桿241連接該升降座25。此外,該油壓/氣壓缸外接一油壓/液壓源,以便驅動該油壓/氣壓缸的作動桿241進行伸縮。在本新型一實施例中,該升降座25上形成有一垂直板體251,在該垂直板體251底端形成有一水平托板253以用於承托該晶舟30,如圖3所示。 In an embodiment of the present invention, the lift drive module 24 is a hydraulic/pneumatic cylinder, and an actuating rod 241 is disposed on the hydraulic/pneumatic cylinder in a telescopic manner. As shown in FIG. 7, the actuating rod 241 is shown in FIG. The lifting seat 25 is connected. In addition, the hydraulic/pneumatic cylinder is externally connected to a hydraulic/hydraulic source for driving the hydraulic rod/pneumatic cylinder actuating rod 241 to expand and contract. In an embodiment of the present invention, a vertical plate body 251 is formed on the lifting base 25, and a horizontal plate 253 is formed at the bottom end of the vertical plate body 251 for supporting the boat 30, as shown in FIG.

在本新型一實施例中,該固定座21上設置有二滑軌22,該升降座25上設置有二滑塊23,該二滑塊23分別以可滑動方式結合在該二滑軌22上。滑軌22與滑塊23的配置可使該升降座25穩定的垂直移動。 In the embodiment of the present invention, the fixing base 21 is provided with two sliding rails 22, and the lifting base 25 is provided with two sliding blocks 23, and the two sliding blocks 23 are slidably coupled to the two sliding rails 22, respectively. . The arrangement of the slide rails 22 and the sliders 23 allows the lift base 25 to move stably vertically.

該基板旋轉機構40設置在該基板升降機構20的該升降座25上,且包括一旋轉驅動模組41、一傳動組件以及一從動旋轉組件。 The substrate rotating mechanism 40 is disposed on the lifting base 25 of the substrate lifting mechanism 20 and includes a rotary driving module 41, a transmission component and a driven rotating component.

該旋轉驅動模組41固定設置在該升降座25上。在本新型一實施例中,該旋轉驅動模組41為一驅動馬達而具有一驅動軸。 The rotary drive module 41 is fixedly disposed on the lift base 25. In an embodiment of the invention, the rotary drive module 41 has a drive shaft for a drive motor.

該傳動組件連接該旋轉驅動模組41並可受到該旋轉驅動模組41的驅動而作動,該從動旋轉組件設置在該升降座25上,連接到該傳動組件,且可受到該傳動組件的驅動而旋轉。在本新型一實施例中,該傳動組件包括一垂直傳動桿42以及一水平傳動軸43。該垂直傳動桿42以可旋轉方式貫穿設置在該垂直板體251上,且與該驅動軸嚙合,該水平傳動軸43與該垂直傳動桿42嚙合。 The transmission assembly is coupled to the rotary drive module 41 and is actuated by the rotation of the rotary drive module 41. The driven rotary assembly is disposed on the lift base 25, coupled to the drive assembly, and is receivable by the drive assembly Drive and rotate. In an embodiment of the invention, the transmission assembly includes a vertical drive rod 42 and a horizontal drive shaft 43. The vertical transmission rod 42 is rotatably disposed on the vertical plate body 251 and engaged with the drive shaft, and the horizontal transmission shaft 43 is engaged with the vertical transmission rod 42.

請參照圖9及10,該從動旋轉組件用於接觸並帶動該基板90進行旋轉。在本新型一實施例中,該從動旋轉組件包括二水平旋轉帶動桿 45,該二水平旋轉帶動桿45與該水平傳動軸43嚙合,在各該水平旋轉帶動桿45上形成有一接觸帶動部455以用於接觸並且帶動該基板90進行旋轉。在本新型一實施例中,該二水平旋轉帶動桿45位於同一水平位置上。在本新型一實施例中,該接觸帶動部455上形成有多個軸向排列的摩擦肋條以能夠提供該基板90良好摩擦力而幫助帶動該基板90旋轉。 Referring to Figures 9 and 10, the driven rotating assembly is used to contact and drive the substrate 90 for rotation. In an embodiment of the present invention, the driven rotating component comprises two horizontal rotating rods 45. The two horizontal rotation driving rods 45 are engaged with the horizontal transmission shaft 43, and a contact driving portion 455 is formed on each of the horizontal rotation driving rods 45 for contacting and driving the substrate 90 to rotate. In an embodiment of the present invention, the two horizontal rotating rods 45 are located at the same horizontal position. In an embodiment of the present invention, the contact driving portion 455 is formed with a plurality of axially arranged friction ribs to provide good friction of the substrate 90 to help drive the substrate 90 to rotate.

在本新型一實施例中,該驅動軸與該垂直傳動桿42之間透過二傘形齒輪400相互嚙合;該垂直傳動桿42與該水平傳動軸43之間透過二傘形齒輪400相互嚙合;該水平傳動軸43與各該水平旋轉帶動桿45之間透過二齒輪430、450相互嚙合。 In an embodiment of the present invention, the drive shaft and the vertical transmission rod 42 are meshed with each other through the two bevel gears 400; the vertical transmission rod 42 and the horizontal transmission shaft 43 are meshed with each other through the two bevel gears 400; The horizontal transmission shaft 43 and each of the horizontal rotation driving rods 45 mesh with each other through the two gears 430 and 450.

該主控模組70連接該基板升降機構20以及該基板旋轉機構40,可控制該基板升降機構20的升降以及該基板旋轉機構40的旋轉。在本新型一實施例中,該主控模組70為一電腦而具有一中央處理器、一記憶體、一儲存器、一輸入介面及輸出介面,並於該儲存器內載有一主控軟體,該電腦通過執行該主控軟體以自動執行或是受使用者操控而驅動該基板升降機構20及/或該基板旋轉機構40以使該基板90升降及/或旋轉。 The main control module 70 is connected to the substrate elevating mechanism 20 and the substrate rotating mechanism 40, and can control the lifting and lowering of the substrate elevating mechanism 20 and the rotation of the substrate rotating mechanism 40. In an embodiment of the present invention, the main control module 70 is a computer having a central processing unit, a memory, a storage, an input interface, and an output interface, and a main control software is loaded in the storage. The computer drives the substrate lifting mechanism 20 and/or the substrate rotating mechanism 40 to perform lifting and/or rotation of the substrate 90 by executing the main control software or automatically by a user.

該蝕刻速率資料庫模組60連接該主控模組70,且用於提供該基板各部位受到蝕刻的速率的歷史資料。在本新型一實施例中,該蝕刻速率資料模組60為一資料庫模組,用於提供該基板各部位受到蝕刻的速率的歷史資料數據給該主控模組70,該主控模組70根據該基板各部位的蝕刻速率資料數據來驅動該基板升降機構20及該基板旋轉機構40,將該基板90升降到特定位置並調節該基板90的旋轉轉速。 The etch rate database module 60 is coupled to the main control module 70 and is used to provide historical data on the rate at which portions of the substrate are etched. In an embodiment of the present invention, the etch rate data module 60 is a database module for providing historical data of the rate at which portions of the substrate are etched to the main control module 70. The main control module The substrate elevating mechanism 20 and the substrate rotating mechanism 40 are driven based on the etching rate data of each portion of the substrate, and the substrate 90 is raised and lowered to a specific position to adjust the rotational speed of the substrate 90.

請參照圖11至13,本新型批次基板濕式處理方法,包括:一 裝置提供步驟S01、一基板浸泡步驟S02、一基板高度調整步驟S03以及一基板旋轉步驟S04。 Referring to FIGS. 11 to 13, the present invention relates to a batch substrate wet processing method, comprising: The device provides a step S01, a substrate soaking step S02, a substrate height adjusting step S03, and a substrate rotating step S04.

該裝置提供步驟S01,包括提供一批次基板濕式處理裝置,如圖1至10所示。該批次基板濕式處理裝置包括:一槽體10,在該槽體10內形成有一容槽100,其中,該容槽100盛載有蝕刻液;一基板升降機構20,設置在該槽體10上,用於承托晶舟30及該晶舟30中的基板90,並用於升高或下降該晶舟30及該晶舟30中的該基板90,使該基板90可位於不同高度而能完全位於該蝕刻液中、部分位於蝕刻液中或是完全位於蝕刻液之上;一基板旋轉機構40,設置在該基板升降機構20上,且用於接觸並帶動該基板90進行旋轉;一主控模組70,連接該基板升降機構20以及該基板旋轉機構40,可控制該基板升降機構20的升降以及該基板旋轉機構40的旋轉;以及一蝕刻速率資料庫模組60,連接該主控模組70,用於收集並提供該基板90各部位受到蝕刻的速率的歷史資料。 The apparatus provides a step S01 comprising providing a batch of substrate wet processing apparatus, as shown in Figures 1 to 10. The batch substrate wet processing apparatus comprises: a tank body 10 in which a tank 100 is formed, wherein the tank 100 carries an etching liquid; and a substrate lifting mechanism 20 is disposed in the tank body 10, for supporting the wafer boat 30 and the substrate 90 in the wafer boat 30, and for raising or lowering the wafer boat 30 and the substrate 90 in the wafer boat 30, so that the substrate 90 can be located at different heights. The substrate rotating mechanism 40 is disposed on the substrate lifting mechanism 20 and is used for contacting and driving the substrate 90 for rotation; The main control module 70 is connected to the substrate lifting mechanism 20 and the substrate rotating mechanism 40, and can control the lifting and lowering of the substrate lifting mechanism 20 and the rotation of the substrate rotating mechanism 40; and an etching rate database module 60 connecting the main The control module 70 is configured to collect and provide historical data of the rate at which portions of the substrate 90 are etched.

該基板浸泡步驟S02,包括放置一晶舟30及該晶舟30內的基板90到該容槽100內,使該晶舟30及該晶舟30內的該基板被該升降座25所承托,並使該基板90完全位於該蝕刻液中,其中,該基板90包括一中心部91以及一環繞該中心部91的周緣部92。 The substrate soaking step S02 includes placing a wafer boat 30 and a substrate 90 in the wafer boat 30 into the cavity 100, so that the wafer boat 30 and the substrate in the boat 30 are supported by the lifting seat 25. And the substrate 90 is completely located in the etching liquid, wherein the substrate 90 includes a central portion 91 and a peripheral portion 92 surrounding the central portion 91.

該基板高度調整步驟S03,包括通過該主控模組70驅動該基板升降機構20升高或降低該基板90,使該基板90完全位於該蝕刻液中、部分位於蝕刻液中或是完全位於蝕刻液之上。 The substrate height adjusting step S03 includes driving the substrate lifting mechanism 20 to raise or lower the substrate 90 by the main control module 70, so that the substrate 90 is completely located in the etching liquid, partially in the etching liquid or completely in the etching. Above the liquid.

該基板旋轉步驟S04,包括通過該主控模組70驅動該基板旋轉機構40帶動該基板90進行旋轉。 The substrate rotating step S04 includes driving the substrate rotating mechanism 40 to drive the substrate 90 to rotate by the main control module 70.

請參照圖12,當該基板90的該中心部91的蝕刻速率高於該周緣部92的蝕刻速率時,通過執行該基板高度調整步驟S03而使該基板90的該中心部91被上升到完全位於該蝕刻液之上且使該中心部91的底緣911切齊該蝕刻液之液面80,並通過執行該基板旋轉步驟S04而使該基板90進行旋轉以增加該周緣部92的蝕刻量並同時減少該中心部91的蝕刻量。 Referring to FIG. 12, when the etching rate of the central portion 91 of the substrate 90 is higher than the etching rate of the peripheral portion 92, the central portion 91 of the substrate 90 is raised to the full extent by performing the substrate height adjusting step S03. Located on the etching liquid, the bottom edge 911 of the center portion 91 is aligned with the liquid surface 80 of the etching liquid, and the substrate 90 is rotated by performing the substrate rotation step S04 to increase the etching amount of the peripheral portion 92. At the same time, the etching amount of the center portion 91 is reduced.

請參照圖13,當該基板90的該周緣部92的蝕刻速率高於該中心部91的蝕刻速率時,通過執行該基板高度調整步驟S03而使該基板90的中心部91被下降到完全位於該蝕刻液之下且使該中心部91的頂緣912切齊該蝕刻液的液面80,並通過執行該基板旋轉步驟S04而使該基板90進行旋轉以增加該中心部91的蝕刻量並同時減少該周緣部92的蝕刻量。 Referring to FIG. 13, when the etching rate of the peripheral portion 92 of the substrate 90 is higher than the etching rate of the central portion 91, the central portion 91 of the substrate 90 is lowered to be completely positioned by performing the substrate height adjusting step S03. Under the etching liquid, the top edge 912 of the central portion 91 is aligned with the liquid surface 80 of the etching liquid, and the substrate 90 is rotated by performing the substrate rotating step S04 to increase the etching amount of the central portion 91. At the same time, the amount of etching of the peripheral portion 92 is reduced.

在本新型一實施例中,該基板90的該中心部91的半徑為一浮動值,是根據該蝕刻速率資料庫模組60所提供到該基板90上各部位的蝕刻速率而改變,且該中心部91的半徑是0到該基板90的半徑。舉例而言,假設該基板90的半徑為R,當該蝕刻速率資料庫模組60的歷史資料顯示該基板90的圓心到半徑為R/2處的較中心區域的蝕刻速率較為一致,而該基板90的R/2到R之間的較周緣區域的蝕刻速率較為一致,且該較中心區域及該較周緣區域兩區域的蝕刻速率有落差時,該主控裝置即設定該具有R/2半徑的較中心區域為中心部91,並設定該介於R/2到R之間的較周緣區域為周緣部92。該主控裝置可即時根據該基板90各部位蝕刻速率的變化而隨時重新設定該中心部91及該周緣部92的範圍。 In an embodiment of the present invention, the radius of the central portion 91 of the substrate 90 is a floating value, which is changed according to the etching rate of the portions of the substrate 90 provided to the substrate 90. The radius of the central portion 91 is 0 to the radius of the substrate 90. For example, assuming that the radius of the substrate 90 is R, when the historical data of the etch rate database module 60 indicates that the etch rate of the center of the substrate 90 to the center region having a radius of R/2 is relatively uniform, When the etching rate of the peripheral region between R/2 and R of the substrate 90 is relatively uniform, and the etching rate of the two regions of the more central region and the peripheral region is different, the main control device sets the R/2. The center portion of the radius is the center portion 91, and the peripheral portion between the R/2 and R is set as the peripheral portion 92. The main control device can instantly reset the range of the central portion 91 and the peripheral portion 92 according to the change in the etching rate of each portion of the substrate 90.

在本新型一實施例中,該基板高度調整步驟S03及該基板旋轉步驟S04同時執行或先後執行,該基板高度調整步驟S03可重複執行,該 基板旋轉步驟S04可重複執行。 In an embodiment of the present invention, the substrate height adjustment step S03 and the substrate rotation step S04 are performed simultaneously or sequentially, and the substrate height adjustment step S03 can be repeatedly performed. The substrate rotation step S04 can be repeatedly performed.

藉由上述技術手段,本新型批次基板濕式處理裝置以及批次基板濕式處理方法根據基板90中心部91及周緣部92的蝕刻速率不同,控制該基板90升降到該中心部91的頂緣912,或底緣911切齊蝕刻液的液面80並使環繞在該中心部91外圍的該周緣部92局部位於該蝕刻液液面80上方,使得該基板90能夠對蝕刻速率較低的中心部91或周圓部進行正向蝕刻補償,而對蝕刻速率較高的另一部分進行負向蝕刻補償,進而增進基板90蝕刻的均勻度,並提高基板90成品良率。 According to the above technical means, the batch substrate wet processing apparatus and the batch substrate wet processing method control the substrate 90 to rise to the top of the center portion 91 according to the etching rate of the central portion 91 and the peripheral portion 92 of the substrate 90. The edge 912, or the bottom edge 911 cuts the liquid surface 80 of the etching liquid and partially surrounds the peripheral portion 92 surrounding the center portion 91 above the etching liquid level 80, so that the substrate 90 can have a lower etching rate. The central portion 91 or the peripheral portion is subjected to forward etching compensation, and the other portion having a higher etching rate is subjected to negative etching compensation, thereby improving the uniformity of etching of the substrate 90 and improving the yield of the substrate 90.

Claims (12)

一種批次基板濕式處理裝置,包括:一槽體,在該槽體內形成有一容槽,該容槽用於盛載蝕刻液,且用於容納晶舟以及位於該晶舟中的基板;一基板升降機構,設置在該槽體上,且包括一固定座、一升降驅動模組以及一升降座,該固定座固定設置在該槽體外,該升降驅動模組以可作動方式設置在該固定座上,該升降座固定設置在該升降驅動模組上,位於該容槽內,且可受到該升降驅動模組的驅動而相對該槽體上升到容槽外或是相對該槽體下降到該容槽內,該升降座用於承托該晶舟及該晶舟中的基板;一基板旋轉機構,設置在該基板升降機構的該升降座上,且包括一旋轉驅動模組、一傳動組件以及一從動旋轉組件,該旋轉驅動模組固定設置在該升降座上,該傳動組件連接該旋轉驅動模組並可受到該旋轉驅動模組的驅動而作動,該從動旋轉組件設置在該升降座上,連接到該傳動組件,且可受到該傳動組件的驅動而旋轉,該從動旋轉組件用於接觸並帶動該基板進行旋轉;以及一主控模組,連接該基板升降機構以及該基板旋轉機構,且控制該基板升降機構的升降以及該基板旋轉機構的旋轉。 A batch substrate wet processing apparatus includes: a tank body having a cavity formed therein for holding an etchant, and for accommodating a boat and a substrate located in the boat; The substrate lifting mechanism is disposed on the slot body, and includes a fixing base, a lifting drive module and a lifting seat. The fixing seat is fixedly disposed outside the slot, and the lifting driving module is movably disposed on the fixing body. The lifting seat is fixedly disposed on the lifting drive module, is located in the receiving slot, and can be driven by the lifting driving module to rise relative to the slot body or descend to the slot body The lifting seat is configured to support the wafer boat and the substrate in the boat; a substrate rotating mechanism is disposed on the lifting platform of the substrate lifting mechanism, and includes a rotating driving module and a transmission And a driven rotating component fixedly disposed on the lifting base, the driving component is coupled to the rotating driving module and is actuated by the driving of the rotating driving module, wherein the driven rotating component is disposed at a lifting base coupled to the transmission assembly and rotatable by the driving assembly, the driven rotating assembly for contacting and driving the substrate to rotate; and a main control module connecting the substrate lifting mechanism and the The substrate rotating mechanism controls the lifting and lowering of the substrate lifting mechanism and the rotation of the substrate rotating mechanism. 如請求項1所述的批次基板濕式處理裝置,其中該升降驅動模組為一油壓/氣壓缸,在該油壓/氣壓缸上以可伸縮方式設置一作動桿,該作動桿連接該升降座。 The batch substrate wet processing apparatus according to claim 1, wherein the lifting drive module is a hydraulic/pneumatic cylinder, and an operating rod is disposed on the hydraulic/pneumatic cylinder in a telescopic manner, and the operating rod is connected. The lift seat. 如請求項1所述的批次基板濕式處理裝置,其中該升降座上形成有一垂直板體,在該垂直板體底端形成有一水平托板以用於承托該晶舟。 The batch substrate wet processing apparatus according to claim 1, wherein a vertical plate body is formed on the lifting seat, and a horizontal plate is formed at a bottom end of the vertical plate body for supporting the boat. 如請求項3所述的批次基板濕式處理裝置,其中該旋轉驅動模組為一驅動馬達而具有一驅動軸;該傳動組件包括一垂直傳動桿以及一水平傳動軸,該垂直傳動桿以可旋轉方式貫穿設置在該垂直板體上,且與該驅動軸嚙合,該水平傳動軸與該垂直傳動桿嚙合;該從動旋轉組件包括二水平旋轉帶動桿,該二水平旋轉帶動桿與該水平傳動軸嚙合,在各該水平旋轉帶動桿上形成有一接觸帶動部以用於接觸並且帶動該基板進行旋轉。 The batch substrate wet processing apparatus of claim 3, wherein the rotary drive module is a drive motor and has a drive shaft; the drive assembly includes a vertical drive rod and a horizontal drive shaft, the vertical drive rod Rotatingly disposed on the vertical plate body and engaging with the drive shaft, the horizontal drive shaft is engaged with the vertical transmission rod; the driven rotation assembly includes two horizontal rotation driving rods, and the two horizontal rotation driving rods The horizontal drive shaft is engaged, and a contact driving portion is formed on each of the horizontal rotary driving rods for contacting and driving the substrate to rotate. 如請求項4所述的批次基板濕式處理裝置,其中該二水平旋轉帶動桿位於同一水平位置上。 The batch substrate wet processing apparatus of claim 4, wherein the two horizontal rotating rods are located at the same horizontal position. 如請求項4所述的批次基板濕式處理裝置,其中該接觸帶動部上形成有多個軸向排列的摩擦肋條。 The batch substrate wet processing apparatus according to claim 4, wherein the contact driving portion is formed with a plurality of axially arranged friction ribs. 如請求項5所述的批次基板濕式處理裝置,其中該驅動軸與該垂直傳動桿之間透過二傘形齒輪相互嚙合;該垂直傳動桿與該水平傳動軸之間透過二傘形齒輪相互嚙合;該水平傳動軸與各該水平旋轉帶動桿之間透過二齒輪相互嚙合。 The batch substrate wet processing apparatus according to claim 5, wherein the drive shaft and the vertical transmission rod are meshed with each other through two bevel gears; and the vertical transmission rod and the horizontal transmission shaft pass through the two bevel gears Inter-engagement; the horizontal transmission shaft and each of the horizontal rotation-driven rods mesh with each other through the two gears. 如請求項1至7中任一項所述的批次基板濕式處理裝置,其中該批次基板濕式處理裝置進一步包括一蝕刻速率資料庫模組,該蝕刻速率資料庫模組連接該主控模組,且用於提供該基板各部位受到蝕刻的速率的歷史資料。 The batch substrate wet processing apparatus according to any one of claims 1 to 7, wherein the batch substrate wet processing apparatus further comprises an etch rate database module, wherein the etch rate database module is connected to the main The control module is configured to provide historical data on the rate at which portions of the substrate are etched. 一種批次基板濕式處理裝置,包括:一槽體,在該槽體內形成有一容槽,該容槽用於盛載蝕刻液,且用於容納晶舟以及位於該晶舟中的基板;一基板升降機構,設置在該槽體上,且包括一固定座、一升降驅動模組 以及一升降座,該固定座固定設置在該槽體外,該升降驅動模組以可作動方式設置在該固定座上,該升降座固定設置在該升降驅動模組上,位於該容槽內,且可受到該升降驅動模組的驅動而相對該槽體上升到容槽外或是相對該槽體下降到該容槽內,該升降座用於承托該晶舟及該晶舟中的基板;一基板旋轉機構,設置在該基板升降機構的該升降座上,且包括一旋轉驅動模組、一傳動組件以及一從動旋轉組件,該旋轉驅動模組固定設置在該升降座上,該傳動組件連接該旋轉驅動模組並可受到該旋轉驅動模組的驅動而作動,該從動旋轉組件設置在該升降座上,連接到該傳動組件,且可受到該傳動組件的驅動而旋轉,該從動旋轉組件用於接觸並帶動該基板進行旋轉;以及一主控模組,連接該基板升降機構以及該基板旋轉機構,且控制該基板升降機構的升降以及該基板旋轉機構的旋轉;其中,該升降座上形成有一垂直板體,在該垂直板體底端形成有一水平托板以用於承托該晶舟;其中,該旋轉驅動模組為一驅動馬達而具有一驅動軸;該傳動組件包括一垂直傳動桿以及一水平傳動軸,該垂直傳動桿以可旋轉方式貫穿設置在該垂直板體上,且與該驅動軸嚙合,該水平傳動軸與該垂直傳動桿嚙合;該從動旋轉組件包括二水平旋轉帶動桿,該二水平旋轉帶動桿與該水平傳動軸嚙合,在各該水平旋轉帶動桿上形成有一接觸帶動部以用於接觸並且帶動該基板進行旋轉;其中,該二水平旋轉帶動桿位於同一水平位置上。 A batch substrate wet processing apparatus includes: a tank body having a cavity formed therein for holding an etchant, and for accommodating a boat and a substrate located in the boat; a substrate lifting mechanism disposed on the slot body and including a fixing base and a lifting drive module And a lifting base fixedly disposed on the outside of the slot, the lifting and driving module is movably disposed on the fixing base, and the lifting seat is fixedly disposed on the lifting driving module, and is located in the receiving slot And being driven by the lifting and driving module to rise outside the cavity with respect to the groove body or descending into the cavity relative to the groove body, the lifting seat is used for supporting the wafer boat and the substrate in the boat a substrate rotating mechanism is disposed on the lifting base of the substrate lifting mechanism, and includes a rotating driving module, a transmission component and a driven rotating component, wherein the rotating driving module is fixedly disposed on the lifting seat, The transmission assembly is coupled to the rotary drive module and is actuated by the rotary drive module. The driven rotary assembly is disposed on the lift base, coupled to the drive assembly, and rotatable by the drive assembly. The driven rotating component is configured to contact and drive the substrate for rotation; and a main control module is connected to the substrate lifting mechanism and the substrate rotating mechanism, and controls the lifting and lowering of the substrate lifting mechanism And rotating the substrate rotating mechanism; wherein the lifting seat is formed with a vertical plate body, and a horizontal plate is formed at the bottom end of the vertical plate body for supporting the boat; wherein the rotary driving module is The drive motor has a drive shaft; the drive assembly includes a vertical drive rod and a horizontal drive shaft rotatably disposed on the vertical plate body and engaged with the drive shaft, the horizontal drive shaft Engaging with the vertical transmission rod; the driven rotation assembly includes two horizontal rotation driving rods, and the two horizontal rotation driving rods are engaged with the horizontal transmission shaft, and a contact driving portion is formed on each of the horizontal rotation driving rods for contact and The substrate is driven to rotate; wherein the two horizontal rotating rods are located at the same horizontal position. 如請求項9所述的批次基板濕式處理裝置,其中該接觸帶動部上形 成有多個軸向排列的摩擦肋條。 The batch substrate wet processing apparatus according to claim 9, wherein the contact driving portion is shaped There are a plurality of axially arranged friction ribs. 如請求項9所述的批次基板濕式處理裝置,其中該驅動軸與該垂直傳動桿之間透過二傘形齒輪相互嚙合;該垂直傳動桿與該水平傳動軸之間透過二傘形齒輪相互嚙合;該水平傳動軸與各該水平旋轉帶動桿之間透過二齒輪相互嚙合。 The batch substrate wet processing apparatus according to claim 9, wherein the drive shaft and the vertical transmission rod are meshed with each other through two bevel gears; and the vertical transmission rod and the horizontal transmission shaft pass through the two bevel gears Inter-engagement; the horizontal transmission shaft and each of the horizontal rotation-driven rods mesh with each other through the two gears. 如請求項9至11中任一項所述的批次基板濕式處理裝置,其中該批次基板濕式處理裝置進一步包括一蝕刻速率資料庫模組,該蝕刻速率資料庫模組連接該主控模組,且用於提供該基板各部位受到蝕刻的速率的歷史資料。 The batch substrate wet processing apparatus according to any one of claims 9 to 11, wherein the batch substrate wet processing apparatus further comprises an etch rate database module, wherein the etch rate database module is connected to the main The control module is configured to provide historical data on the rate at which portions of the substrate are etched.
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI690991B (en) * 2019-01-23 2020-04-11 弘塑科技股份有限公司 Batch substrate wet treatment device and batch substrate wet treatment method
CN113035751A (en) * 2021-03-02 2021-06-25 桂林雷光科技有限公司 Chip rotating device of stress-relief etching machine and equipment thereof
TWI776110B (en) * 2019-10-14 2022-09-01 新加坡商Pyxis Cf有限公司 Wet processing equipment and method of operation
TWI803003B (en) * 2021-09-24 2023-05-21 弘塑科技股份有限公司 Wet wafer process device and wafer cassette

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI690991B (en) * 2019-01-23 2020-04-11 弘塑科技股份有限公司 Batch substrate wet treatment device and batch substrate wet treatment method
TWI776110B (en) * 2019-10-14 2022-09-01 新加坡商Pyxis Cf有限公司 Wet processing equipment and method of operation
US11810797B2 (en) 2019-10-14 2023-11-07 Pyxis Cf Pte. Ltd. Wetting processing apparatus and operation method thereof
CN113035751A (en) * 2021-03-02 2021-06-25 桂林雷光科技有限公司 Chip rotating device of stress-relief etching machine and equipment thereof
CN113035751B (en) * 2021-03-02 2022-08-19 桂林雷光科技有限公司 Chip rotating device of stress-relief etching machine and equipment thereof
TWI803003B (en) * 2021-09-24 2023-05-21 弘塑科技股份有限公司 Wet wafer process device and wafer cassette

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