TWM556870U - Grayscale mask, substrate with concave-convex photoresist pattern - Google Patents
Grayscale mask, substrate with concave-convex photoresist pattern Download PDFInfo
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Abstract
一種灰階光罩、具凹凸紋理光阻圖案的基板,其中該灰階光罩包含:一光罩基板;及一微型遮光部層,形成於該光罩基板上,該微型遮光部層具有複數組微形遮光圖案,每組微形遮光圖案不可透光且可於該基板的一光阻層以一曝光顯影製程製作出一凹凸紋理光阻結構,於硬化該凹凸紋理光阻結構後構成該凹凸紋理光阻圖案;其中,每組微形遮光圖案由複數個微形遮光部排列構成,且該些微形遮光部之間構成複數個透光區,該些透光區具有至少一主透光區與至少一次透光區,該主透光區的寬度最大;該些微形遮光部係選自為直線狀、曲線狀、環形狀、圓環狀或其任意組合。 A gray-scale reticle, a substrate having a concave-grained photoresist pattern, wherein the gray-scale reticle comprises: a reticle substrate; and a micro opaque layer formed on the reticle substrate, the micro opaque layer having a plurality of a set of micro-shielding patterns, each set of micro-shielding patterns is opaque, and a concave-convex texture resist structure can be formed on a photoresist layer of the substrate by an exposure and development process, and the concave-convex texture resist structure is cured a concave-convex texture resist pattern; wherein each of the micro-shaped light-shielding patterns is composed of a plurality of micro-shaped light-shielding portions, and the plurality of light-shielding portions form a plurality of light-transmitting regions, wherein the light-transmitting regions have at least one main light-transmitting region The region and the at least one light transmissive region have a maximum width; the microscopic light shielding portions are selected from the group consisting of a linear shape, a curved shape, a ring shape, an annular shape, or any combination thereof.
Description
本新型係關於一種光罩,特別關於一種灰階光罩、具凹凸紋理光阻圖案的基板。 The present invention relates to a reticle, and more particularly to a gray scale reticle, a substrate having a textured texture pattern.
目前,智慧型裝置如智慧型手機、智慧型手錶、智慧型醫療器材等,都搭配有大螢幕讓使用者觀看螢幕上的資訊。這些具有大螢幕的裝置,除了功能強大外,逐漸都走向個性化、美觀的造型設計,包括外觀、形狀、色彩等。這些都必須透過令人激賞的外殼設計與製造來實現。 At present, smart devices such as smart phones, smart watches, smart medical devices, etc., are equipped with large screens for users to watch the information on the screen. In addition to their powerful functions, these devices with large screens are gradually becoming personalized and beautiful, including appearance, shape and color. These must be achieved through an impressive shell design and manufacturing.
對於智慧型裝置外殼的圖案製作,有以下幾種工法:第一種工法:轉印技術。透過預先製作的平面圖樣,再轉印到目標的平面或曲面。此種工法的加工成本低,但加工速度慢、材料成本高,且圖案解析度差。第二種工法:噴墨+雷射雕刻。透過噴墨方法將顏料噴至目標的平面或曲面,再透過雷射雕刻的方式將圖案刻出。此種工法加工成本高且加工速度慢,設備成本也很高,材料成本也高,優點是,解析度高,可達20um(微米)。 For the patterning of the smart device housing, there are several methods: the first method: transfer technology. Transfer to the plane or surface of the target through the pre-made plan. The processing cost of such a method is low, but the processing speed is slow, the material cost is high, and the pattern resolution is poor. The second method: inkjet + laser engraving. The pigment is sprayed onto the plane or curved surface of the target by an inkjet method, and the pattern is carved by laser engraving. Such a method has high processing cost and slow processing speed, high equipment cost, and high material cost. The advantage is that the resolution is high, up to 20 um (micrometer).
以上的技術,都僅限於平面型的微圖案製作,也就是,圖案的呈現僅止於二維的微細圖案。如果要製作出具有凹凸紋理(三維)的微細 圖案結構的整體圖案,目前有一種作法,奈米壓印技術。其透過預先製作的微細奈米圖案的模具,來進行壓印後,再運用曝光顯影的方式,製作出所需要的立體微細圖案。此種奈米壓印技術的模具成本極高,並且,每次壓印後可能產生的光阻材料表面沾黏於模具上,導致光阻材料表面的缺陷,以及,造成模具汙染,使得下一次使用的沾黏情形更為嚴重。也就是,奈米壓印技術具有高成本、低良率的重大缺陷。 The above techniques are limited to the planar micropatterning, that is, the pattern is represented only by the two-dimensional micropattern. If you want to make a fine texture with a bumpy texture (three-dimensional) The overall pattern of the pattern structure, there is currently a practice, nano imprint technology. The embossing is performed by a mold of a fine nano-pattern which is prepared in advance, and then a desired three-dimensional fine pattern is produced by exposure and development. The mold cost of such nano imprint technology is extremely high, and the surface of the photoresist material that may be generated after each imprinting is adhered to the mold, resulting in defects on the surface of the photoresist material, and causing mold contamination, so that the next time The sticky condition used is more serious. That is, nanoimprint technology has major drawbacks of high cost and low yield.
因此,如何能開發出同時具備加工成本低、加工速度快、材料成本低、解析度高的多重優點的凹凸微細圖案,成為智慧型裝置廠商所希求的發展方向。 Therefore, how to develop a concave and convex fine pattern having both advantages of low processing cost, high processing speed, low material cost, and high resolution has become a development direction that smart device manufacturers are hoping for.
為達上述目的,本新型提供一種灰階光罩、具凹凸紋理光阻圖案的基板及其製造方法,運用灰階光罩與繞射效應來製作出具凹凸紋理光阻圖案的基板,其具有製程簡單、低成本、高良率的特殊技術功效。 In order to achieve the above object, the present invention provides a gray scale mask, a substrate with a textured texture pattern and a manufacturing method thereof, and uses a gray scale mask and a diffraction effect to fabricate a substrate having a concave-grained photoresist pattern, which has a process Simple, low-cost, high-yield special technical effects.
本新型提供一種灰階光罩,用以製作出具凹凸紋理光阻圖案的一基板,包含:一光罩基板;及一微型遮光部層,形成於該光罩基板上,該微型遮光部層具有複數組微形遮光圖案,每組微形遮光圖案不可透光且可於該基板的一光阻層以一曝光顯影製程製作出一凹凸紋理光阻結構,於硬化該凹凸紋理光阻結構後構成該凹凸紋理光阻圖案;其中,每組微形遮光圖案由複數個微形遮光部排列構成,且該些微形遮光部之間構成複數個透光區,該些透光區具有至少一主透光區與至少一次透光區,該主透光區的寬度最大;該些微形遮光部係選自為直線狀、曲線狀、環形狀、 圓環狀或其任意組合。 The present invention provides a gray scale mask for fabricating a substrate having a textured texture pattern comprising: a mask substrate; and a micro light shielding layer formed on the mask substrate, the micro light shielding layer having a plurality of micro-shielding patterns, each set of micro-shielding patterns is opaque, and a concave-convex texture resist structure can be formed on a photoresist layer of the substrate by an exposure and development process, and the concave-convex texture resist structure is hardened The concave-convex texture resist pattern; wherein each of the micro-shaped light-shielding patterns is composed of a plurality of micro-shaped light-shielding portions, and the plurality of light-shielding portions form a plurality of light-transmissive regions, and the light-transmitting regions have at least one main light-transmissive region The light region and the at least one light transmitting region have a maximum width; the micro light shielding portions are selected from the group consisting of a linear shape, a curved shape, and a ring shape. Ring shape or any combination thereof.
本新型更提供一種灰階光罩,用以製作出具凹型紋理光阻圖案的一基板,包含:一光罩基板;及一微型遮光部層,形成於該光罩基板上,該微型遮光部層具有複數組微形遮光圖案,每組微形遮光圖案不可透光且可於該基板的一光阻層以一曝光顯影製程製作出一凹型紋理光阻結構,於硬化該凹型紋理光阻結構後構成該凹型紋理光阻圖案;其中,每組微形遮光圖案由複數個微形遮光部排列構成,且該些微形遮光部之間構成複數個透光區,該些微形遮光部具有至少一主遮光部與至少一次遮光部,該主遮光部的寬度最大;該些微形遮光部係選自為直線狀、曲線狀、環形狀、圓環狀或其任意組合。 The present invention further provides a gray scale mask for fabricating a substrate having a concave texture resist pattern, comprising: a mask substrate; and a micro light shielding layer formed on the mask substrate, the micro light shielding layer Having a complex array of micro-shielding patterns, each set of micro-shielding patterns is opaque and a concave-type textured photoresist structure can be formed on a photoresist layer of the substrate by an exposure and development process, after hardening the concave-type photoresist structure Forming the concave-type texture resist pattern; wherein each set of micro-shaped light-shielding patterns is composed of a plurality of micro-shaped light-shielding portions, and the plurality of light-shielding portions constitute a plurality of light-transmissive portions, and the micro-shaped light-shielding portions have at least one main The light shielding portion and the at least one light shielding portion have a maximum width; and the micro light shielding portions are selected from a linear shape, a curved shape, a ring shape, an annular shape, or any combination thereof.
本新型另提供一種運用本新型的灰階光罩製作的具凹凸紋理光阻圖案的基板,包含:一基板;及一凹凸紋理光阻圖案,永久形成於該基板上,由複數個凹凸紋理光阻結構構成。 The invention further provides a substrate with a concave-convex texture resist pattern produced by using the gray scale mask of the present invention, comprising: a substrate; and a concave-convex texture resist pattern permanently formed on the substrate, and the plurality of concave-convex texture lights Resistive structure.
為讓本新型之上述和其他目的、特徵、和優點能更明顯易懂,下文特舉數個較佳實施例,並配合所附圖式,作詳細說明如下(實施方式)。 The above and other objects, features, and advantages of the present invention will become more apparent and understood.
1、3、5、7‧‧‧灰階光罩 1, 3, 5, 7‧‧ ‧ grayscale mask
2、6、8‧‧‧局部放大的灰階光罩 2,6,8‧‧‧ Partially enlarged grayscale reticle
9A、9B、9C、9D‧‧‧局部 9A, 9B, 9C, 9D‧‧‧ local
10‧‧‧基板 10‧‧‧Substrate
20‧‧‧微型遮光部層 20‧‧‧Miniature shade layer
21、22、23‧‧‧微形遮光部 21, 22, 23‧‧‧ micro-shaped sunshade
30‧‧‧微型遮光部層 30‧‧‧Miniature shade layer
31、32、33、34‧‧‧微形遮光部 31, 32, 33, 34‧‧‧ micro-shaped shading
40‧‧‧微形遮光圖案 40‧‧‧Micro-Shade Pattern
41、42、43、44、45、46、47、48、49、50‧‧‧微形遮光部 41, 42, 43, 44, 45, 46, 47, 48, 49, 50‧‧‧ micro-shaped shading
60‧‧‧微形遮光圖案 60‧‧‧Micro-Shade Pattern
61、62‧‧‧微形遮光圖案 61, 62‧‧‧ micro-shading pattern
70‧‧‧微型遮光部層 70‧‧‧Miniature shade layer
71、72、73‧‧‧微形遮光部 71, 72, 73‧‧‧ micro-shaped shading
81、82、83、84‧‧‧微形遮光部 81, 82, 83, 84‧‧‧ micro-shaped shading
100A‧‧‧凸曲面紋理光阻圖案結構 100A‧‧‧ convex surface texture resist pattern structure
100B‧‧‧凹曲面紋理光阻圖案結構 100B‧‧‧ concave surface texture resist pattern structure
101‧‧‧基板 101‧‧‧Substrate
111、112‧‧‧光阻層 111, 112‧‧‧ photoresist layer
D1、D2、D3、D4、D5、D6、D7、D8、D9‧‧‧寬度 D1, D2, D3, D4, D5, D6, D7, D8, D9‧‧ Width
第1A-1C圖,本新型的灰階光罩的一個實施例的剖面圖、剖面放大圖與上視示意圖。 1A-1C is a cross-sectional view, an enlarged cross-sectional view, and a top view of an embodiment of the gray scale mask of the present invention.
第1D圖,運用第1A-1C圖的本新型的灰階光罩的實施例,於第一光強度 下製作出來的凹凸紋理光阻結構。 1D, an embodiment of the gray scale mask of the present invention using the 1A-1C diagram, at a first light intensity The concave-convex texture resist structure produced underneath.
第1E圖,運用第1A-1C圖的本新型的灰階光罩的實施例,於第二光強度下製作出來的凹凸紋理光阻結構。 Fig. 1E shows a concave-convex texture resist structure produced at a second light intensity using the embodiment of the gray scale mask of the present invention in Figs. 1A-1C.
第2A-2C圖,本新型的灰階光罩的另一個實施例的剖面圖、剖面放大圖與上視示意圖。 2A-2C is a cross-sectional view, a cross-sectional enlarged view and a top view of another embodiment of the gray scale mask of the present invention.
第2D圖,運用第2A-2C圖的本新型的灰階光罩的實施例,於第二光強度下製作出來的凹凸紋理光阻結構。 Fig. 2D is a plan view of a concave-grained photoresist structure produced at a second light intensity using an embodiment of the gray scale mask of the present invention in Figs. 2A-2C.
第3A-3B圖,本新型的灰階光罩的又一個實施例的部分放大上視圖、部分剖面放大圖。 3A-3B is a partially enlarged plan view, partially enlarged cross-sectional view showing still another embodiment of the gray scale mask of the present invention.
第3C圖,運用第3A-3B圖的本新型的灰階光罩的實施例,於第二光強度下製作出來的凹凸紋理光阻結構。 Fig. 3C shows a concave-convex texture resist structure produced at a second light intensity using the embodiment of the gray scale mask of the present invention in Figs. 3A-3B.
第4A圖,本新型的灰階光罩的再一個實施例的部分放大上視圖、部分剖面放大圖。 4A is a partially enlarged plan view, partially enlarged cross-sectional view showing still another embodiment of the gray scale mask of the present invention.
第4B圖,運用第4A圖的本新型的灰階光罩的實施例,於第二光強度下製作出來的凹凸紋理光阻結構。 Fig. 4B is a view showing a concave-convex texture resistive structure produced at a second light intensity using the embodiment of the gray scale mask of the present invention in Fig. 4A.
第5圖,本新型製造具凹凸紋理光阻圖案的基板的方法流程圖。 Fig. 5 is a flow chart showing the method of manufacturing a substrate having a textured texture pattern.
第6A、6B圖,其為本新型可製作出圓弧形凹面結構的一實施例。 6A and 6B are diagrams showing an embodiment in which a circular arc-shaped concave surface structure can be produced.
第7圖,其為採用曲線狀的微形遮光部所製作出來的灰階光罩的局部實施例。 Fig. 7 is a partial embodiment of a gray scale mask produced by using a curved micro-shield portion.
根據本新型的實施例,本新型運用繞射現象的概念來重新 定義灰階光罩,並透過控制曝光的強度以及灰階光罩與待曝光的光阻層之間的距離來製作出各種型態的凹凸紋理的光阻結構,經過硬化後,即可獲得各種型態的凹凸紋理光阻圖案。本新型的技術具有低成本、高良率、高解析度等特殊技術功效,可充分滿足未來電子產品對於各種凹凸紋理的表面製作的目的。 According to an embodiment of the present invention, the present invention re-uses the concept of diffraction phenomenon Define a gray scale mask, and by controlling the intensity of the exposure and the distance between the gray scale mask and the photoresist layer to be exposed to fabricate various types of concave and convex texture photoresist structures, after hardening, various types can be obtained. Type of textured texture resist pattern. The novel technology has the special technical effects of low cost, high yield, high resolution, etc., and can fully meet the purpose of future electronic products for surface preparation of various concave and convex textures.
請先參考第1A-1C圖,本新型的灰階光罩的一個實施例的剖面圖、剖面放大圖與上視示意圖。以下,將結合第1A-1C圖來說明本新型的灰階光罩的結構。 Please refer to FIG. 1A-1C for a cross-sectional view, an enlarged cross-sectional view and a top view of an embodiment of the gray scale mask of the present invention. Hereinafter, the structure of the gray scale mask of the present invention will be described with reference to Figs. 1A-1C.
本新型的灰階光罩1,用以製作出一具凹凸紋理光阻圖案的基板,包含:基板10;及微型遮光部層20。基板10可以是玻璃基板、塑膠基板等具透光性的基板。微型遮光部層20形成於基板10上,微型遮光部層20構成複數組微形遮光圖案,每組微形遮光圖案不可透光且可於基板10以一曝光顯影製程製作出一凹凸紋理光阻結構,於硬化凹凸紋理光阻結構後構成凹凸紋理光阻圖案。每組微形遮光圖案由複數個微形遮光部21、22、23之間構成複數個透光區,這些透光區具有至少一主透光區與至少一次透光區,主透光區的寬度最大。如第1B圖所示,局部放大的灰階光罩2當中,主透光區由兩個微形遮光部23所定義,其寬度為D1,其餘的次透光區分別由微形遮光部22、23及微形遮光部21、22所定義,其寬度分別為D2、D3。 The gray scale mask 1 of the present invention is used for fabricating a substrate having a concave-convex texture resist pattern, comprising: a substrate 10; and a micro-shielding layer 20. The substrate 10 may be a translucent substrate such as a glass substrate or a plastic substrate. The micro opaque layer 20 is formed on the substrate 10, and the micro opaque layer 20 forms a multi-array micro-shielding pattern. Each set of micro-shielding patterns is opaque and can form a concave-convex texture resist on the substrate 10 by an exposure and development process. The structure forms a textured texture resist pattern after the hardened textured photoresist structure. Each set of micro-shaped light-shielding patterns comprises a plurality of light-transmissive regions between the plurality of micro-shaped light-shielding portions 21, 22, 23, and the light-transmitting regions have at least one main light-transmitting region and at least one light-transmitting region, and the main light-transmitting region The width is the largest. As shown in FIG. 1B, in the partially enlarged gray scale mask 2, the main light transmission area is defined by two micro-shaped light shielding portions 23 having a width D1, and the remaining secondary light transmission areas are respectively formed by the micro light shielding portion 22 The 23 and the micro-shielding portions 21 and 22 are defined by widths D2 and D3, respectively.
這些微形遮光部係選自為直線狀、環形狀、圓環狀、曲線狀或其任意組合。在第1A-1C圖的實施例中,微形遮光部21、22、23係為直線狀。並且,每組微形遮光圖案由兩個微形遮光部21、22、23所構成,即第1B、1C圖局部9A的範圍。 The micro-shielding portions are selected from the group consisting of a linear shape, a ring shape, an annular shape, a curved shape, or any combination thereof. In the embodiment of the first A-1C diagram, the micro-shielding portions 21, 22, and 23 are linear. Further, each set of the micro-shielding pattern is composed of two micro-shaped light-shielding portions 21, 22, and 23, that is, the range of the portion 9A of the first B and 1C.
其中,微形遮光部的寬度可介於0.5um-500um之間。以第1A-1C圖的實施例而言,微形遮光部21的寬度最大,其可做為每組微形遮光圖案的界面。微形遮光部係採取線狀設計(直線狀、環形狀、圓環狀、曲線狀或其任意組合),進而運用光的狹縫繞射原理,讓寬度較寬的主透光區的繞射光與次透光區的繞射光彼此重疊,進而構成一個曲面化、甚至構成一個圓弧形或者球形的光分佈。於是,透過適當的光照強度與適當的光罩與基板之間的間距,即可構成完美的曲面、圓弧形或者球形的光分佈,進而製作出曲面、圓弧形或者球形的凹凸紋理光阻圖案結構。如第1B圖的下方,即為採用第1B圖上方的局部放大的灰階光罩2所可能製作的圓弧形的凸曲面紋理光阻圖案結構100A,其由基板101與光阻層111所構成,光阻層111已透過局部放大的灰階光罩2的曝光,使得顯影過後的圖案成為圓弧形。 Wherein, the width of the micro-shielding portion may be between 0.5 um and 500 um. In the embodiment of the 1A-1C diagram, the width of the micro-shielding portion 21 is the largest, which can be used as an interface of each set of micro-shielding patterns. The micro-shaped light-shielding part adopts a linear design (linear, ring-shaped, annular, curved, or any combination thereof), and further uses the slit diffraction principle of light to make the diffracted light of the main light-transmissive region having a wide width. The diffracted light with the sub-transmissive region overlaps each other to form a curved surface, or even a circular or spherical light distribution. Thus, by appropriate light intensity and appropriate spacing between the reticle and the substrate, a perfect curved, circular or spherical light distribution can be formed, thereby producing a curved, circular or spherical concave-convex texture resist. Pattern structure. The lower side of FIG. 1B is a circular arc-shaped convex-surface texture resist pattern structure 100A which may be fabricated by using the partially enlarged gray scale mask 2 above the first FIG. 1B, which is composed of the substrate 101 and the photoresist layer 111. In this configuration, the photoresist layer 111 has been exposed to the partially enlarged gray scale mask 2 so that the developed pattern has a circular arc shape.
在第1A-1C圖的實施例中,至少有一個主透光區與至少一個次透光區,主透光區的寬度最大,次透光區的寬度距離主透光區越遠寬度越小。或者,這些透光區具有至少一主透光區與複數個次透光區,主透光區的寬度最大,這些次透光區的寬度與主透光區的距離成反比。 In the embodiment of FIG. 1A-1C, there is at least one main light transmitting region and at least one second light transmitting region, wherein the width of the main light transmitting region is the largest, and the width of the second light transmitting region is farther from the main light transmitting region, and the width is smaller. . Alternatively, the light transmissive regions have at least one main light transmissive region and a plurality of sub-transparent regions, wherein the width of the main light transmissive region is the largest, and the width of the sub-transparent regions is inversely proportional to the distance of the main light transmissive region.
其中,主透光區的寬度介於10um-500um之間,次透光區的寬度介於0.5um-10um之間。 Wherein, the width of the main light transmission region is between 10 um and 500 um, and the width of the secondary light transmission region is between 0.5 um and 10 um.
接著,請參考第1D圖,其為運用第1A-1C圖的本新型的灰階光罩的實施例,於第一光強度(25%)下製作出來的凹凸紋理光阻結構的顯微攝影圖。請參考第1E圖,運用第1A-1C圖的本新型的灰階光罩的實施例,於第二光強度(40%)下製作出來的凹凸紋理光阻結構的顯微攝影圖。比較第1D圖與第1E圖可以發現,第1E圖的表面呈現較光滑、圓弧效果較佳的直條狀 曲面;第1D圖則呈現鋸齒狀的表面波紋的直條狀曲面。這兩種不同的結構,皆可讓具凹凸紋理光阻圖案的基板具有不同的視覺效果。重點是,其透過本新型的灰階光罩與製作方法,可運用極低的成本與製程時間,即可完成高解析度的凹凸紋理光阻圖案。 Next, please refer to FIG. 1D, which is a photomicrograph of the concave-convex texture resist structure fabricated under the first light intensity (25%) using the embodiment of the gray scale mask of the present invention in FIG. 1A-1C. Figure. Referring to FIG. 1E, a photomicrograph of the textured texture resistive structure produced at the second light intensity (40%) using the embodiment of the gray scale mask of the present invention in FIG. 1A-1C. Comparing the 1D and 1E, it can be found that the surface of the 1E is a straight strip with a smoother and more circular arc effect. The surface; the 1D image presents a straight strip of surface with a jagged surface ripple. These two different structures allow the substrate with the textured photoresist pattern to have different visual effects. The key point is that through the gray scale mask and manufacturing method of the present invention, a high-resolution textured texture pattern can be completed with extremely low cost and process time.
接著,請參考第2A-2C圖,本新型的灰階光罩的另一個實施例的剖面圖、剖面放大圖與上視示意圖。本新型的灰階光罩3,用以製作出一具凹凸紋理光阻圖案的基板,包含:基板10及微型遮光部層30。基板10可以是玻璃基板、塑膠基板等具透光性的基板。微型遮光部層30形成於基板10上,微型遮光部層30構成複數組微形遮光圖案,每組微形遮光圖案不可透光且可於基板10以一曝光顯影製程製作出一凹凸紋理光阻結構,於硬化凹凸紋理光阻結構後構成凹凸紋理光阻圖案。每組微形遮光圖案由複數個微形遮光部31、32、33、34排列構成,且這些微形遮光部31、32、33、34之間構成複數個透光區,這些透光區具有至少一主透光區與至少一次透光區,主透光區的寬度最大,其可製作出每組微形遮光圖案的波峰。如第1B圖所示,局部放大的灰階光罩2當中,主透光區由微形遮光部32、33所定義,其寬度為D4,其餘的次透光區由微形遮光部31、32,以及微形遮光部33、34所定義,其寬度為D5。 Next, please refer to FIG. 2A-2C for a cross-sectional view, an enlarged cross-sectional view and a top view of another embodiment of the gray scale mask of the present invention. The gray scale mask 3 of the present invention is used for fabricating a substrate having an uneven texture resist pattern, comprising: a substrate 10 and a micro light shielding layer 30. The substrate 10 may be a translucent substrate such as a glass substrate or a plastic substrate. The micro opaque layer 30 is formed on the substrate 10, and the micro opaque layer 30 forms a complex array of micro-shielding patterns. Each set of micro-shielding patterns is opaque and can be formed on the substrate 10 by an exposure and development process. The structure forms a textured texture resist pattern after the hardened textured photoresist structure. Each of the micro-shaped light-shielding patterns is composed of a plurality of micro-shaped light-shielding portions 31, 32, 33, and 34, and the plurality of light-shielding portions 31, 32, 33, and 34 form a plurality of light-transmitting regions, and the light-transmitting regions have At least one main light transmissive region and at least one light transmissive region have a maximum width of the main light transmissive region, which can create a peak of each set of microscopic shading patterns. As shown in FIG. 1B, in the partially enlarged gray scale mask 2, the main light transmission area is defined by the micro light shielding portions 32, 33, and the width thereof is D4, and the remaining secondary light transmission areas are formed by the micro light shielding portion 31, 32, as defined by the micro-shields 33, 34, having a width D5.
在第2A-2C圖的實施例中,微形遮光部31、32、33、34係為直線狀。並且,每組微形遮光圖案由微形遮光部31、32、33、34所構成,即第2B、2C圖的局部放大的灰階光罩4所示的範圍。 In the embodiment of the second A-2C diagram, the micro-shielding portions 31, 32, 33, and 34 are linear. Further, each set of the micro-shielding pattern is composed of the micro-shielding portions 31, 32, 33, and 34, that is, the range shown by the partially enlarged gray-scale mask 4 of FIGS. 2B and 2C.
接著,請參考第2D圖,運用第2A-2C圖的本新型的灰階光罩的實施例,於第二光強度(40%)下製作出來的凹凸紋理光阻結構。比較第1E 圖與第2D圖可以發現,第1E圖的表面呈現較光滑、圓弧效果較佳的曲面,並且,每個圓弧面之間的界面寬度較大,因為其有較寬的微形遮光部21、28的配置;第2D圖同樣呈現較光滑、圓弧效果較佳的曲面。這兩種不同的結構,皆可讓具凹凸紋理光阻圖案的基板具有不同的視覺效果。 Next, referring to FIG. 2D, an uneven texture photoresist structure fabricated at a second light intensity (40%) using the embodiment of the gray scale mask of the present invention in FIG. 2A-2C. Compare 1E It can be found from the figure and the 2D figure that the surface of the 1E figure presents a smoother surface with a better arc effect, and the interface width between each arc surface is larger because it has a wider micro-shield portion. The configuration of 21, 28; the 2D figure also presents a smoother surface with better arc effect. These two different structures allow the substrate with the textured photoresist pattern to have different visual effects.
第1A-1E圖、第2A-2D圖的兩個實施例,說明了本新型透過運用光的繞射原理,讓本新型的灰階光罩可實現直條形的凹凸紋理光阻圖案的製作。並且,透過第2A-2D圖的最少透過區(一個主透光區與兩個第一次透光區)即可實現一個圓弧形的凹凸紋理光阻圖案。每組微形遮光圖案至少由一個主透光區與一個次透光區即可製作出曲面效果的光阻圖案。須注意,本新型的光阻圖案,係用於永久光阻層,也就是具有視覺效果的光阻圖案,並非半導體製程當中暫時存在的光阻圖案。 The two embodiments of the first 1A-1E and the second A-2D illustrate the fabrication of the straight-line concave-convex texture resist pattern by using the diffraction principle of the present invention. . Moreover, an arc-shaped concave-convex texture resist pattern can be realized by the minimum transmission area (one main light transmission area and the two first light transmission areas) of the 2A-2D figure. Each set of micro-shading patterns can be formed with a curved effect photoresist pattern by at least one main light-transmissive region and one second light-transmitting region. It should be noted that the photoresist pattern of the present invention is used for a permanent photoresist layer, that is, a photoresist pattern having a visual effect, and is not a photoresist pattern temporarily existing in a semiconductor process.
接下來,本新型將列舉一實施例來說明如何實現球面的凹凸紋理光阻圖案之製作。 Next, the present invention will exemplify an embodiment to explain how to fabricate a spherical textured texture pattern.
請參考第3A-3B圖,本新型的局部放大的灰階光罩6的又一個實施例的部分放大上視圖、部分剖面放大圖。由第3A-3B圖可以發現,本新型透過環形狀的微形遮光部41、42、43、44、45、46、47、48、49、50的設計,可以實現點狀(中心)與環狀凹凸紋理的光阻圖案,如第3C圖,運用第3A-3B圖的本新型的灰階光罩的實施例,於第二光強度下製作出來的凹凸紋理光阻結構。 Please refer to FIG. 3A-3B for a partially enlarged top view and a partial cross-sectional enlarged view of still another embodiment of the partially enlarged gray scale mask 6 of the present invention. It can be seen from Fig. 3A-3B that the novel design of the ring-shaped micro-shielding portions 41, 42, 43, 44, 45, 46, 47, 48, 49, 50 can realize point (center) and ring The resist pattern of the textured texture, as shown in Fig. 3C, is an uneven texture photoresist structure produced at a second light intensity using the embodiment of the gray scale mask of the present invention in Figs. 3A-3B.
其中,主透光區的寬度D6,由微形遮光部41、42所定義;其餘的透光區則由微形遮光部41、43,微形遮光部42、44…所定義,其寬度較D6為窄。其中,第4A、4B圖的實施例,是包含了多個主透光區的設計, 亦即,微形遮光部43、44為第二主透光區,其寬度亦較其他次透光區的寬度為大。換言之,同一個微形遮光圖案40,可以有多個主透光區,而彼此的寬度可以不同。但相同的是,一個主透光區,至少會配置一個次透光區。如此,即可藉由光繞射效應,製作出較光滑弧面的凹凸紋理光阻結構。 Wherein, the width D6 of the main light transmission area is defined by the micro light shielding portions 41, 42; the remaining light transmission areas are defined by the micro light shielding portions 41, 43, the micro light shielding portions 42, 44, ... D6 is narrow. Wherein, the embodiment of FIGS. 4A and 4B is a design including a plurality of main light transmitting regions. That is, the micro-shielding portions 43, 44 are the second main light-transmitting regions, and the width thereof is also larger than the width of the other sub-transmissive regions. In other words, the same micro-shaped light-shielding pattern 40 may have a plurality of main light-transmissive regions, and the widths of each other may be different. But the same is that a main light transmission area will be provided with at least one secondary light transmission area. In this way, a smooth curved surface resistive photoresist structure can be produced by the light diffraction effect.
前面三個實施例,說明了連續線條的凹凸紋理光阻結構與圖案的製作。運用本新型的技術,另可製作短線條、單點等非線性的凹凸紋理光阻圖案,其同樣透過運用狹縫繞射的原理來實現。 The first three embodiments illustrate the fabrication of a continuous line of textured textured structures and patterns. By using the novel technology, a non-linear concave-convex texture resist pattern such as a short line or a single point can be produced, which is also realized by applying the principle of slit diffraction.
請參考第4A圖,本新型局部放大的灰階光罩8的再一個實施例的上視圖、剖面圖。微形遮光圖案60由微形遮光圖案61、62所排列構成,其中,為微形遮光圖案61為由一個較寬的中央微形遮光部與兩側各兩個微形遮光部所構成的圖案。這導致了兩旁的兩個較寬的主透光區與寬度漸小的各兩個次透光區。此種微形遮光圖案的設計,可製作出如第4B圖的短線條凹槽紋理結構。 Referring to FIG. 4A, a top view and a cross-sectional view of still another embodiment of the partially enlarged gray scale mask 8 of the present invention. The micro-shielding pattern 60 is formed by arranging the micro-shielding patterns 61 and 62, wherein the micro-shielding pattern 61 is a pattern formed by a wide central micro-shaped light-shielding portion and two micro-shaped light-shielding portions on both sides. . This results in two wider main light transmissive areas on both sides and two sub-transmission areas of decreasing width. The design of such a micro-shading pattern can produce a short-line groove texture structure as shown in FIG. 4B.
由以上的多個實施例可知,本新型的微形遮光圖案可製作出的凹凸紋理光阻結構可以是:一圓弧形凸面結構、一圓弧形凹面結構、一半圓球形凸面結構或一半圓球形凹面結構。而這些結構可以彼此連續或不連續,或者交錯組合。這都端視不同的微形遮光圖案之間彼此如何配置。 It can be seen from the above various embodiments that the concave-convex texture resistive structure that can be fabricated by the micro-shielding pattern of the present invention may be: a circular arc convex structure, a circular arc concave structure, a semi-spherical convex structure or a half circle. Spherical concave structure. These structures may be continuous or discontinuous, or interlaced, with each other. This is how the different micro-shading patterns are arranged relative to each other.
因此,本新型可以製作出一種具凹凸紋理光阻圖案的基板,包含:一基板;及一凹凸紋理光阻圖案,永久形成於基板上,由複數個凹凸紋理光阻結構構成。其中該些凹凸紋理光阻結構係選自:一圓弧形凸面結構、一圓弧形凹面結構、一半圓球形凸面結構或一半圓球形凹面結構,各結構可以是線型、曲線或短線條。其中,凹凸紋理光阻結構的最小 寬度介於0.5um-500um之間。 Therefore, the present invention can produce a substrate having a textured texture pattern comprising: a substrate; and a textured photoresist pattern permanently formed on the substrate and composed of a plurality of textured textured photoresist structures. The concave-convex texture resistive structure is selected from the group consisting of: a circular arc-shaped convex structure, a circular arc-shaped concave structure, a semi-spherical convex structure or a semi-spherical concave structure, and each structure may be a line shape, a curve or a short line. Among them, the minimum of the uneven texture photoresist structure The width is between 0.5um and 500um.
接著,請參考第5圖,本新型製造具凹凸紋理光阻圖案的基板的方法流程圖。 Next, please refer to FIG. 5, a flow chart of a method for manufacturing a substrate having a textured texture pattern.
步驟101:提供一基板;任何型態的基板皆可,塑膠基板、玻璃基板、金屬基板、曲面基板。 Step 101: providing a substrate; any type of substrate, plastic substrate, glass substrate, metal substrate, curved substrate.
步驟102:形成一負型光阻層於該基板上;運用負型光阻可於曝光顯影製程後,構成永久材料層,也就是本新型所想製作出來的具凹凸紋理圖案效果的標的。 Step 102: Forming a negative photoresist layer on the substrate; and using the negative photoresist to form a permanent material layer after the exposure and development process, that is, the target of the concave and convex texture pattern effect which the present invention wants to produce.
步驟103:提供請求項1的該灰階光罩,該灰階光罩具有複數組微形遮光圖案,每組微形遮光圖案可製作出一個凹凸紋理光阻結構。 Step 103: The gray-scale reticle of claim 1 is provided. The gray-scale reticle has a complex array of micro-shielding patterns, and each set of micro-shielding patterns can produce a concave-convex texture resist structure.
步驟104:調整該灰階光罩與該負型光阻層之一間距;間距不同,也會使得繞射的效果不同,進而製作出不同形狀的該些凹凸紋理光阻結構。 Step 104: Adjusting the spacing between the gray scale mask and the negative photoresist layer; the different pitches may also make the diffraction effects different, thereby fabricating the uneven texture photoresist structures of different shapes.
步驟105:曝光;控制曝光強度,可製作出不同形狀的該些凹凸紋理光阻結構。 Step 105: Exposure; controlling the exposure intensity, the uneven texture photoresist structures of different shapes can be fabricated.
步驟106:顯影該負型光阻,使複數個凹凸紋理光阻結構形成於該基板上。 Step 106: Developing the negative photoresist to form a plurality of textured textured photoresist structures on the substrate.
步驟107:硬化該些凹凸紋理光阻結構,以形成一凹凸紋理光阻圖案於該基板上。 Step 107: Harden the uneven textured photoresist structures to form a textured textured photoresist pattern on the substrate.
綜上所述,運用本新型的灰階光罩所製作出的具凹凸紋理光阻圖案的基板,具有低成本、高良率、高解析度等特殊技術功效,可充分滿足未來電子產品對於各種凹凸紋理的表面製作的目的。 In summary, the substrate with the concave-convex texture resist pattern produced by the gray scale mask of the present invention has special technical effects such as low cost, high yield, high resolution, etc., and can fully satisfy the future electronic products for various bumps and the like. The purpose of the surface of the texture.
接著,請參考第6A、6B圖,其為本新型可製作出圓弧形凹面結構的一實施例。在第6A圖中,本新型的灰階光罩5,用以製作出一具凹凸紋理光阻圖案的基板,包含:基板10;及微型遮光部層70。基板10可以是玻璃基板、塑膠基板等具透光性的基板。微型遮光部層70形成於基板10上,微型遮光部層70構成複數組微形遮光圖案,每組微形遮光圖案不可透光且可於基板10以一曝光顯影製程製作出一凹凸紋理光阻結構,於硬化凹凸紋理光阻結構後構成凹凸紋理光阻圖案。每組微形遮光圖案由複數個微形遮光部71、72、73之間構成複數個透光區。為了要形成第7B圖的圓弧形凹面結構,局部放大的灰階光罩5當中,由主微形遮光部71、次微形遮光部72、73所構成,其概念即為第1A-1E圖的實施例的相反。 Next, please refer to FIGS. 6A and 6B, which is an embodiment of the present invention in which a concave arc-shaped concave structure can be produced. In FIG. 6A, the gray scale mask 5 of the present invention is used to fabricate a substrate having a concave-convex texture resist pattern, comprising: a substrate 10; and a micro-shielding layer 70. The substrate 10 may be a translucent substrate such as a glass substrate or a plastic substrate. The micro opaque layer 70 is formed on the substrate 10, and the micro opaque layer 70 forms a multi-array micro-shielding pattern. Each set of micro-shielding patterns is opaque and can be formed on the substrate 10 by an exposure and development process. The structure forms a textured texture resist pattern after the hardened textured photoresist structure. Each set of micro-shading patterns is formed by a plurality of light-transmissive regions between a plurality of micro-shaped light-shielding portions 71, 72, 73. In order to form the arcuate concave structure of FIG. 7B, the partially enlarged gray scale mask 5 is composed of a main micro-shaped light-shielding portion 71 and a sub-micro-shaped light-shielding portion 72, 73, and the concept thereof is 1A-1E. The opposite of the embodiment of the figure.
其中,微形遮光部71、72、73的寬度可介於0.5um-500um之間。以第6A-6B圖的實施例而言,微形遮光部71為主遮光部,寬度最大,其可製作出每組微形遮光圖案的波谷。而微形遮光部71、72定義出第一透光部,微形遮光部72、73定義出第二透光部,兩個微形遮光部73之間定義出第三透光部。第三透光部的寬度,可定義出兩個凹曲面的頂端的平台寬度大小。 The width of the micro-shielding portions 71, 72, 73 may be between 0.5 um and 500 um. In the embodiment of Figs. 6A-6B, the micro-shielding portion 71 is a main shading portion having the largest width, and it is possible to create a trough of each group of micro-shielding patterns. The micro light-shielding portions 71 and 72 define a first light-transmitting portion, and the micro-light-shielding portions 72 and 73 define a second light-transmitting portion, and a third light-transmitting portion is defined between the two micro-shaped light-shielding portions 73. The width of the third light transmitting portion defines the width of the platform of the top end of the two concave curved surfaces.
同樣的,微形遮光部採取線狀設計(直線狀、環形狀、圓環狀、曲線狀或其任意組合),進而運用光的狹縫繞射原理,讓寬度較寬的主透光區的繞射光與次透光區的繞射光彼此重疊,進而構成一個凸曲面光分佈,進而製作出凹曲面紋理光阻圖案結構,如第6B圖的下方,即為採用第1B圖上方的局部放大的灰階光罩2所可能製作的圓弧形的凹曲面紋理光阻圖案結構100B,其由基板101與光阻層112所構成,光阻層112已透過灰階光 罩5的曝光,使得顯影過後的圖案成為圓弧形凹曲面。 Similarly, the micro-shaped light-shielding portion adopts a linear design (linear, ring-shaped, annular, curved, or any combination thereof), and then uses the slit diffraction principle of light to allow a wide width of the main light-transmissive region. The diffracted light and the diffracted light of the sub-transmissive region overlap each other to form a convex curved surface light distribution, thereby forming a concave curved texture resist pattern structure, as shown in the lower part of FIG. 6B, that is, a partial enlargement above the first FIG. The arc-shaped concave curved surface texture resist pattern structure 100B which may be fabricated by the gray scale mask 2 is composed of the substrate 101 and the photoresist layer 112, and the photoresist layer 112 has transmitted gray scale light. The exposure of the cover 5 is such that the developed pattern becomes a circular arc-shaped concave curved surface.
接下來,請參考第7圖,其為採用曲線狀的微形遮光部81、82、83、84所製作出來的灰階光罩7的局部9D實施例,其為對應於第2C圖的直線狀微形遮光部的實施例,可製作出曲線凸面光阻結構。同樣地,透過光強度的調整,可製作出不同質地的曲線凸面光阻結構。曲線狀同樣可應用於第1A-1E圖、第3A、3C圖、第4A-4B圖的對應實施例。 Next, please refer to FIG. 7, which is a partial 9D embodiment of the gray scale mask 7 produced by the curved micro-shielding portions 81, 82, 83, 84, which is a line corresponding to the 2Cth diagram. In the embodiment of the micro-shaped light-shielding portion, a curved convex photoresist structure can be fabricated. Similarly, by adjusting the light intensity, curved convex photoresist structures of different textures can be produced. The curved shape can also be applied to the corresponding embodiments of the 1A-1E, 3A, 3C, and 4A-4B drawings.
雖然本新型的技術內容已經以較佳實施例揭露如上,然其並非用以限定本新型,任何熟習此技藝者,在不脫離本新型之精神所作些許之更動與潤飾,皆應涵蓋於本新型的範疇內,因此本新型之保護範圍當視後附之申請專利範圍所界定者為準。 Although the technical content of the present invention has been disclosed in the above preferred embodiments, it is not intended to limit the present invention, and any modifications and refinements made by those skilled in the art without departing from the spirit of the present invention should be encompassed by the present invention. Therefore, the scope of protection of this new type is subject to the definition of the scope of the patent application.
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