TWM553496U - Light-emitting device - Google Patents

Abstract

A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer; a pad electrode on the second semiconductor layer; a current blocking layer including a first opening on the second semiconductor layer to expose a surface of the second semiconductor layer; a transparent conductive layer on the current blocking layer, the transparent conductive layer including a second opening to expose the surface of the second semiconductor layer; and an extension electrode connected to the pad electrode, wherein the extension electrode includes a first portion in the first opening and the second opening, and a second portion on the transparent conductive layer.

Description

Light-emitting element

The present invention relates to a light-emitting element, and in particular to a light-emitting element comprising an electrode pad and an extension electrode extending from the electrode pad.

A light-emitting diode (LED) is a widely used solid-state light-emitting element. The light emitting diode (LED) comprises a p-type semiconductor layer, an n-type semiconductor layer, and an active layer between the p-type semiconductor layer and the n-type semiconductor layer to emit a light. The principle of LED is to provide a current to the LED to inject electrons and holes into the active layer, and combine them in the active layer to emit light to convert the electrical energy into light energy.

A light emitting device comprises a semiconductor stack having a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer; an electrode pad on the second semiconductor layer; a current resistance The barrier layer has a first opening on the second semiconductor layer to surround the electrode pad, and the current blocking layer is in direct contact with the second semiconductor layer; a transparent conductive layer is on the current blocking layer, and the transparent conductive layer has a second opening And surrounding the electrode pad; and an extending electrode extending outward from the electrode pad, wherein the extending electrode comprises a first portion in the first opening and the second opening, and a second portion is located in the transparent conductive layer and the current blocking layer on.

A light emitting device comprises a semiconductor stack having a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer; an electrode pad on the second semiconductor layer; a current resistance The barrier layer has a first opening on the second semiconductor layer to expose one surface of the second semiconductor layer, the current blocking layer is in direct contact with the second semiconductor layer; a transparent conductive layer is on the current blocking layer, and the transparent conductive layer Having a second opening to expose a surface of the second semiconductor layer; and an extension electrode coupled to the electrode pad, wherein the electrode pad comprises a metal layer having a work function greater than 4 eV to form a Schottky contact with the second semiconductor layer.

A light emitting device comprises a semiconductor stack having a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer; an electrode pad on the second semiconductor layer; a current resistance The barrier layer has a first opening on the second semiconductor layer to expose a surface of the second semiconductor layer; and a transparent conductive layer on the current blocking layer, the transparent conductive layer having a second opening to expose the second semiconductor layer a surface, wherein the first opening comprises a first side, the second opening comprises a second side, the electrode pad comprises a third side, and the first side and the third side comprise a distance greater than 3 μm or The distance between the two sides and the third side is greater than 3 μm.

A light emitting device comprises a semiconductor stack having a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer; an electrode pad on the second semiconductor layer; a current resistance The barrier layer has a first opening on the second semiconductor layer to expose a surface of the second semiconductor layer; and a transparent conductive layer on the current blocking layer, the transparent conductive layer having a second opening to expose the second semiconductor layer The surface, wherein the first opening comprises a first width, the second opening comprises a second width, and the electrode pad comprises a third width, the first width being greater than the third width or the second width being greater than the third width.

In order to make the description of the present invention more detailed and complete, please refer to the description of the following embodiments and the related diagrams. However, the embodiments shown below are used to exemplify the light-emitting elements of the present invention, and the present invention is not limited to the following embodiments. In addition, the dimensions, materials, shapes, relative arrangements, and the like of the components described in the present specification are not limited to the description, and the scope of the present invention is not limited thereto, and is merely illustrative. Further, the size, positional relationship, and the like of the members shown in the drawings may be exaggerated for clarity of explanation. Further, in the following description, in order to omit the detailed description, the same or similar members are denoted by the same names and symbols.

Fig. 1 is a perspective view showing the structure of a light-emitting element 1 disclosed in an embodiment of the present invention. Fig. 2 is a cross-sectional view of the light-emitting element 1 taken along the line A-A' in Fig. 1. As shown in FIG. 1 and FIG. 2, the light-emitting element 1 includes a substrate 10, and a semiconductor layer 12 is disposed on the substrate 10. The semiconductor layer 12 includes a first semiconductor layer 121, a second semiconductor layer 122, and An active layer 123 is located between the first semiconductor layer 121 and the second semiconductor layer 122, and a transparent conductive layer 22 is disposed on the second semiconductor layer 122.

The first semiconductor layer 121 and the second semiconductor layer 122 have different conductivity types, electrical properties, polarities, or doped elements to provide electrons or holes. Specifically, the first semiconductor layer 121 includes an n-type or p-type semiconductor, and when the first semiconductor layer 121 is an n-type semiconductor, the second semiconductor layer 122 may be a p-type semiconductor or when the first semiconductor layer 121 is p In the case of a type semiconductor, the second semiconductor layer 122 may be an n-type semiconductor. The active layer 123 is formed between the first semiconductor layer 121 and the second semiconductor layer 122. The active layer 123 converts electrical energy into light energy. The physical and chemical composition of one or more layers of the semiconductor stack 12 is varied to adjust the wavelength of the light. The material of the semiconductor stack 12 comprises aluminum gallium indium phosphorus (AlGaInP) or aluminum gallium indium nitride (AlGaInN). The active layer 123 comprises a single heterostructure (SH), a double heterostructure (DH), a double-side double heterostructure (DDH), or a multi-quantum well structure. MQW). Specifically, the material of the active layer 123 may be a neutral, p-type or n-type semiconductor. When a current is passed through the semiconductor stack 12, the active layer 123 emits a light. When the active layer 123 comprises a material of the aluminum gallium indium phosphorus (AlGaInP) series, the active layer 123 emits amber light, such as red light, orange light, or yellow light; when the active layer 123 contains aluminum gallium indium nitride (AlGaInN) In the case of a series of materials, the active layer 123 emits blue light, green light, or ultraviolet light. This embodiment is exemplified by a semiconductor laminate 12 having a material of an aluminum gallium indium nitride (AlGaInN) series. The laminate can be formed by a variety of methods, such as organometallic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), hydride vapor deposition (HVPE).

As shown in Fig. 1, the light-emitting element 1 includes a rectangle in a top view having a long side and a short side. The light-emitting element 1 includes a first electrode 14 and a second electrode 16, the first electrode 14 includes a first electrode pad 141, and one or more first extension electrodes 142 extend from the first electrode pad 141, and along The second electrode pad 161 extends in a direction parallel to the long side of the light-emitting element 1. The second electrode 16 includes a second electrode pad 161; and one or more second extension electrodes 162 extend from the second electrode pad 161 and extend toward the first electrode pad 141 in a direction along the long side of the light emitting element 1. . In one embodiment, the first electrode 14 and the second electrode 16 may be configured in a symmetrical structure with respect to a horizontal line, a vertical line, or a diagonal line passing through a center point of the light-emitting element 1.

The first electrode 14 and the second electrode 16 may be located on the same side of the substrate 10 or on the opposite side of the substrate 10. FIGS. 1 and 2 show an embodiment in which the first electrode 14 and the second electrode 16 are located on the same side of the substrate 10.

The semiconductor stack 12 can remove a portion of the second semiconductor layer 122 and the active layer 123 by etching to expose one surface of the first semiconductor layer 121. The first electrode 14 is formed on the exposed surface of the first semiconductor layer 121 and is electrically connected to the first semiconductor layer 121. The second electrode 16 is formed on the surface of the second semiconductor layer 122 and is electrically connected to the second semiconductor layer 122.

As shown in FIG. 1-2, the light-emitting element 1 includes a first current blocking layer 211 between the first electrode pad 141 and the first semiconductor layer 121, and one or more first current blocking layers 211' are located at the first An extension electrode 142 and the first semiconductor layer 121 are disposed, and a second current blocking layer 212 is disposed between the second semiconductor layer 122 and the second extension electrode 162. The first current blocking layer 211 has an upper surface area including a periphery 2110 on the outer side of the first electrode pad 141 to surround the first electrode pad 141.

The first current blocking layer 211, 211' and the second current blocking layer 212 are disposed under the first electrode 14 and the second electrode 16, so that the current injected into the first electrode 14 and the second electrode 16 is prevented from being concentrated. Below the first electrode pad 141, the first extension electrode 142, and the second extension electrode 162. The materials of the first current blocking layers 211, 211' and the second current blocking layer 212 comprise an insulating material such as hafnium oxide, tantalum nitride, or aluminum oxide. The structures of the first current blocking layers 211, 211' and the second current blocking layer 212 may be a single layer or a plurality of layers, such as a Bragg reflection layer (DBR). The material of the first current blocking layer 211, 211 ′ and the second current blocking layer 212 may form a high resistance junction or a first semiconductor layer 121 and a junction with the junction of the first electrode 14 and the second electrode 16 . The junction of the two semiconductor layers 122 forms a material of high resistance junction, such as a semiconductor material. In the embodiment, the materials of the first current blocking layer 211, 211 ′ and the second current blocking layer 212 are selected to be undoped or have a lower doping concentration than the first semiconductor layer 121 and the second semiconductor layer 122 . Materials such as undoped or low-doped aluminum gallium indium nitride series materials.

The transparent conductive layer 22 includes a first portion and a second portion. The first portion of the transparent conductive layer 22 is on the current blocking layer 212 and is not in direct contact with the surface of the second semiconductor layer 122. The second portion of the transparent conductive layer 22 is in direct contact with the surface of the second semiconductor layer 122 to uniformly diffuse the current injected into the second electrode 16 to the entire surface of the second semiconductor layer 122. The second portion of the transparent conductive layer 22 includes a surface area that is greater than a surface area of the first portion. Since the transparent conductive layer 22 is located on the light extraction surface of the light-emitting element 1, a light-transmitting conductive material is preferably selected as the transparent conductive layer 22. Specifically, the transparent conductive layer 22 is preferably selected from a metal oxide containing at least one element selected from the group consisting of zinc, indium, or tin, such as zinc oxide (ZnO), indium oxide (InO), and tin oxide (SnO). Indium tin oxide (ITO), indium zinc oxide (IZO), or gallium zinc oxide (GZO). A metal film can also be used as the transparent conductive layer 22. Preferably, the transparent conductive layer 22 has high light transmittance to the light emitted from the active layer 123, for example, 60% or more, 70% or more, 75% or more, 80% or more, or higher, and has high conductivity. material.

As shown in FIG. 2, the light-emitting element 1 includes a protective layer 20 having a plurality of openings 201, 202 for partially exposing the upper surface of the first electrode pad 141 and the second electrode pad 161. The protective layer 20 covers a portion of the upper surface and one side surface of the first electrode pad 141 and the second electrode pad 161, and completely covers one side surface of the semiconductor laminate 12. The protective layer 20 includes one end to contact an upper surface of the substrate 10. The surface of the substrate 10 adjacent to the protective layer 20 includes a roughened surface.

In another embodiment of the present invention, the surface of the substrate 10 adjacent to the first semiconductor layer 121 includes a first roughened state, and the surface of the substrate 10 adjacent to the protective layer 20 includes a second roughened type. The first roughening type and the second roughening type have different roughening patterns or different roughening heights and roughening widths.

In another embodiment of the present invention, the protective layer 20 includes openings 201, 202 to partially or completely expose the upper surfaces of the first electrode pad 141 and the second electrode pad 161. When the openings 201, 202 of the protective layer 20 completely expose the upper surfaces of the first electrode pad 141 and the second electrode pad 161, the protective layer 20 is separated from the first electrode pad 141 and the second electrode pad 161 by a distance to respectively expose the first A surface of the semiconductor layer 121 and the second semiconductor layer 122.

The protective layer 20 contains an insulating material such as hafnium oxide, tantalum nitride, or aluminum oxide. The protective layer 20 may be a single layer structure or a multilayer structure. The thickness of the protective layer 20 is between 500 Å and 5,000 Å, and more preferably between 1000 Å and 3,000 Å.

In another embodiment of the present invention, the first electrode 14 may include a plurality of first electrode pads 141; and one or more first extension electrodes 142 extend from each of the first electrode pads 141. The plurality of first extension electrodes 142 may be connected to each other or separated from each other by a distance. The second electrode 16 may include a plurality of second electrode pads 161; and one or more second extension electrodes 162 extend from each of the second electrode pads 161. The plurality of second extension electrodes 162 may be connected or separated from each other. In one embodiment of the present invention, the plurality of first extension electrodes 142 separated from each other are surrounded by second extension electrodes 162 that are connected to each other.

In one embodiment of the present invention, the first electrode pad 141 and the second electrode pad 161 each include a size, such as a width, which is greater than the widths of the first extension electrode 142 and the second extension electrode 162, such that the first electrode pad 141 and the second electrode pad 161 can be connected to a wire, solder bump or other alternative structure. The first electrode pad 141 and the second electrode pad 161 are located on opposite sides or corners of the light extraction surface of the light-emitting element 1. The first extension electrode 142 and the second extension electrode 162 extend outward from the first electrode pad 141 and the second electrode pad 161, respectively, to uniformly diffuse the injected current to the entirety of the light-emitting element 1.

In one embodiment of the present invention, the first electrode pad 141 and the second electrode pad 161 each include a wire layer for bonding the wire, a conductive layer under the wire layer, and a barrier layer at the wire layer and the conductive layer. An adhesive layer is used to increase the adhesion between the conductive layer and the transparent conductive layer 22 or the second semiconductor layer 122. The wire layer comprises a first metal, such as gold (Au). The thickness of the wire layer is between 1000 Å and 42,000 Å, preferably between 5,000 Å and 10,000 Å. The conductive layer comprises a second metal different from the first metal, and the second metal may be aluminum (Al), silver (Ag) or copper (Cu). The barrier layer comprises a third metal layer and a fourth metal layer, or a plurality of third metal layers and a plurality of fourth metal layers overlapping each other, such as titanium (Ti) / platinum (Pt) / titanium (Ti) / platinum (Pt) or titanium (Ti) / platinum (Pt) / titanium (Ti) / platinum (Pt) / titanium (Ti) / platinum (Pt). The third metal layer is preferably one to three times thicker than the fourth metal layer. The thickness of the third metal layer is between 500 Å and 1500 Å, and the thickness of the fourth metal layer is between 250 Å and 750 Å. The third metal layer and the fourth metal layer each comprise a material selected from the group consisting of chromium (Cr), platinum (Pt), titanium (Ti), titanium tungsten (TiW), tungsten (W), and zinc (Zn). The adhesive layer preferably contains chromium (Cr) or rhodium (Rh). The thickness of the adhesive layer is preferably between 5 Å and 500 Å, more preferably between 50 Å and 150 Å, so that the adhesive layer is thin enough to allow light from the active layer 123 to penetrate. In another embodiment of the present invention, the first electrode pad 141 and the second electrode pad 161 each include a barrier layer (not shown) having a moisture and corrosion resistant metal such as titanium (Ti). The outermost sides of the first electrode pad 141, the first extension electrode 142, the second electrode pad 161, and the second extension electrode 162 cover other metals inside the electrode pad. The barrier layer is formed with an opening on the first electrode pad 141 and the second electrode pad 161 to expose the wire bonding layer as a metal wire. The thickness of the barrier layer is between 50 Å and 5,000 Å, preferably between 100 Å and 1000 Å, preferably between 50 Å and 200 Å.

The barrier layer of the first electrode pad 141 and the second electrode pad 161 is located between the wire bonding layer and the protective layer 20.

In one embodiment of the present invention, the light-emitting element 1 includes an insulating layer (not shown) having moisture and corrosion resistance, such as tantalum nitride (SiNx), and is coated on the first electrode pad 141, the first extension. The outermost sides of the electrode 142, the second electrode pad 161, the second extension electrode 162, and the semiconductor laminate 12. The light-emitting element 1 further comprises a protective layer 20 on the insulating layer, wherein the protective layer 20 comprises a material different from the material of the insulating layer, for example, the protective layer 20 comprises ruthenium oxide and the insulating layer comprises tantalum nitride (SiNx). An insulating layer composed of tantalum nitride (SiNx) is located between the protective layer 20 containing germanium oxide and the wiring layer. An insulating layer made of tantalum nitride (SiNx) forms an opening on the first electrode pad 141 and the second electrode pad 161 to expose the first electrode pad 141 and the second electrode pad 161 as metal wiring positions. .

In one embodiment of the present invention, the first electrode pad 141, the second electrode pad 161, the first extension electrode 142, and the second extension electrode 162 are formed on the light extraction surface of the light-emitting element 1 in the same step or in different steps. on. The first electrode pad 141, the second electrode pad 161, the first extension electrode 142, and the second extension electrode 162 comprise a thickness between 0.5 μm and 5 μm.

As shown in FIG. 1, the first electrode 14 includes a first electrode pad 141; and the first extension electrode 142 extends from the first electrode pad 141. The first electrode pad 141 can be used as a wire pad or pad for the packaging process, including a perimeter 1410. In a top view of the light-emitting element 1, the perimeter 1410 of the first electrode pad 141 can be circular, elliptical, or rectangular, wherein the rectangle can include one or more arcuate corners. The second electrode 16 includes a second electrode pad 161; and the second extension electrode 162 extends from the second electrode pad 161. The second electrode pad 161 includes a perimeter 1610. The upper boundary 1610 of the second electrode pad 161 may be circular, elliptical, or rectangular, wherein the rectangle may include one or more arc angles. .

In one embodiment of the present invention, the second electrode pad 161 and the second extension electrode 162 comprise the same material, and the second electrode pad 161 comprises a metal layer to be in direct contact with the second semiconductor layer 122. The metal layer has a work function greater than 4 eV or comprises a metal material selected from the group consisting of titanium (Ti), tungsten (W), niobium (Nb), aluminum (A1), tin (Sn), hafnium (Hf), and niobium (Y). , iron (Fe), zirconium (Zr), vanadium (V), manganese (Mn), gadolinium (Gd), iridium (Ir), platinum (Pt), ruthenium (Ru), ruthenium (Ta) and chromium (Cr) Which constitutes a group. When the second semiconductor layer 122 is a p-type semiconductor, the metal layer forms a high resistance contact with the second semiconductor layer, such as a Schottky contact. One current is injected through the second electrode pad 161, and is not directly injected into the second semiconductor layer 122 by the second electrode pad 161 with respect to other current paths, mainly through the second extension electrode 162 and the transparent conductive layer 22 to be diffused to The second semiconductor layer 122.

In one embodiment of the present invention, the first electrode pad 141 and the second electrode pad 161 comprise the same metal material. The first electrode pad 141 includes a metal layer to be in direct contact with the first semiconductor layer 121. The metal layer of the first electrode pad 141 comprises a metal material selected from the group consisting of titanium (Ti), tungsten (W), niobium (Nb), aluminum ( A1), tin (Sn), hafnium (Hf), yttrium (Y), iron (Fe), zirconium (Zr), vanadium (V), manganese (Mn), gadolinium (Gd), iridium (Ir), platinum ( A group consisting of Pt), ruthenium (Ru), tantalum (Ta), and chromium (Cr). When the first semiconductor layer 121 is an n-type semiconductor, the metal layer of the first electrode pad 141 forms a low resistance contact with the first semiconductor layer, such as an ohmic contact.

Fig. 3 is a partially enlarged view of the light-emitting element 1 taken along the line B-B' in Fig. 1. In one embodiment of the present invention, as shown in FIG. 1 and FIG. 3, the second current blocking layer 212 is located between the transparent conductive layer 22 and the second semiconductor layer 122, and includes a first opening 2120 to be exposed. The surface of the second semiconductor layer 122, the transparent conductive layer 22 covering the second current blocking layer 212 includes a second opening 220 to expose the surface of the second semiconductor layer 122, and the second opening 220 of the transparent conductive layer 22 includes a second opening 220. The second width is the same as the first width of the first opening 2120 of the second current blocking layer 212. The second electrode pad 161 includes a third width, and the second extension electrode 162 includes a fourth width, the first width is greater than the third width or the second width is greater than the third width, and the third width is greater than the fourth width. In other words, as shown in FIG. 3, one side surface 2120s of the second current blocking layer 212 is substantially flush with one side surface 220s of the transparent conductive layer 22, and is located on the same plane. A distance between the side surface 220s of the transparent conductive layer 22 and the side surface 161s of the second electrode pad 161 and a distance between the side surface 2120s of the second current blocking layer 212 and the side edge 161s of the second electrode pad 161 Roughly the same.

4 is a modification of FIG. 3. As shown in FIG. 4, the second current blocking layer 212 is located between the transparent conductive layer 22 and the second semiconductor layer 122, and includes a first opening 2120 to expose the first The surface of the second semiconductor layer 122, the transparent conductive layer 22 covering the second current blocking layer 212 includes a second opening 220 to expose the surface of the second semiconductor layer 122, and the first opening 2120 of the second current blocking layer 212. A second width including a first width greater than the second opening 220 of the transparent conductive layer 22 is included. In other words, as shown in FIG. 3, one side surface 2120s of the second current blocking layer 212 is covered by the transparent conductive layer 22. The side surface 220s of the transparent conductive layer 22 is closer to the side 161s of the second electrode pad 161 than the side surface 2120s of the second current blocking layer 212. The side surface 220s of the transparent conductive layer 22 and the side surface 2120s of the second current blocking layer 212 comprise a distance greater than 3 μm or between 1 μm and 6 μm.

FIG. 5 is a modification of FIG. 3. As shown in FIG. 5, the second current blocking layer 212 is located between the transparent conductive layer 22 and the second semiconductor layer 122, and includes a first opening 2120 to expose the first The surface of the second semiconductor layer 122, the transparent conductive layer 22 overlying the second current blocking layer 212 includes a second opening 220 to expose the surface of the second semiconductor layer 122 and a portion of the second current blocking layer 212. The first opening 2120 of the second current blocking layer 212 includes a first width that is smaller than a second width of the second opening 220 of the transparent conductive layer 22. In other words, as shown in FIG. 5, one side surface 2120s of the second current blocking layer 212 and one side surface 220s of the transparent conductive layer 22 are misaligned. The side surface 2120s of the second current blocking layer 212 is closer to the side edge 161s of the second electrode pad 161 than the side surface 220s of the transparent conductive layer 22. The side surface 220s of the transparent conductive layer 22 and the side surface 2120s of the second current blocking layer 212 comprise a distance greater than 3 μm or between 1 μm and 6 μm.

In another embodiment of the present invention, in the embodiment of the third, fourth, and fifth embodiments, the second electrode pad 161 is located at the first opening 220 of the transparent conductive layer 22 and the first opening of the second current blocking layer 212. In 2120, the first opening 2120 and/or the second opening 220 may be extended to cover the transparent conductive layer 22 and/or the current blocking layer 212.

In another embodiment of the present invention, the side surface 220s of the transparent conductive layer 22 is a slope (not shown), and the angle between the side surface 220s and the surface of the second semiconductor layer 122 is an acute angle.

In another embodiment of the present invention, the side surface 2120s of the second current blocking layer 212 is a slope (not shown), and the angle between the side surface 2120s and the surface of the second semiconductor layer 122 is an acute angle.

In another embodiment of the present invention, the side surface 2120s of the second current blocking layer 212 includes two surface regions of different slopes (not shown), wherein a surface region closer to the surface of the second semiconductor layer 122 has One slope is greater than the other surface area.

In another embodiment of the present invention, as shown in FIG. 1, the second extension electrode 162 includes a first portion 1621 located at the first opening 2120 of the second current blocking layer 212 and a second of the transparent conductive layer 22. The opening 220 and a second portion 1622 are located on the transparent conductive layer 22 and the second current blocking layer 212.

In another embodiment of the present invention, as shown in FIG. 1, the second extension electrode 162 includes a first portion 1621 and a second portion 1622. The first portion 1621 includes a first end directly connected to The second electrode pad 161 and a second end are connected to the second portion 1622 of the second extension electrode 162. The first end includes a width greater than a width of the second end.

In another embodiment of the present invention, as shown in FIG. 1, the second extension electrode 162 includes a first portion 1621 and a second portion 1622. The first portion 1621 includes a thickness or a width. The two electrode pads 161 gradually become smaller toward the second portion 1622 of the second extension electrode 162.

In another embodiment of the present invention, as shown in FIG. 1, in the stacking direction of one of the semiconductor layers 12, the upper surface of the first portion 1621 of the second extension electrode 162 and the second portion 1622 A first step difference is included between the upper surfaces.

In another embodiment of the present invention, a side surface 2120s of the second current blocking layer 212 and a side edge 161s of the second electrode pad 161 include a side surface 220s having a distance greater than 3 μm and/or the transparent conductive layer 22. A distance greater than 3 μm is included between the side edges 161s of the second electrode pad 161.

In another embodiment of the present invention, a side surface 2120s of the second current blocking layer 212 and a side edge 161s of the second electrode pad 161 comprise a distance greater than 3 [mu]m and less than 10 [mu]m. The side surface 220s of the transparent conductive layer 22 and the side edge 161s of the second electrode pad 161 comprise a distance greater than 3 μm and less than 10 μm.

In another embodiment of the present invention, as shown in FIG. 1, the first electrode pad 141 and the first extension electrode 142 are surrounded by the second semiconductor layer 122, and one of the first electrode pad 141 and the second semiconductor layer 122 A first shortest distance is included between the side edges, and a second shortest distance is included between the first extension electrode 142 and one of the sides of the second semiconductor layer 122. The first shortest distance is greater than or less than the second shortest distance. In another embodiment of the present creation, the first shortest distance is the same as the second shortest distance.

In another embodiment of the present invention, as shown in FIG. 1, the first electrode pad 141 and the first extension electrode 142 are surrounded by the second semiconductor layer 122, and the first side 1421 and the first side of the first extension electrode 142 A first shortest distance is included between the first side 1221 of the second semiconductor layer 122, and a fourth shortest distance is included between the second side 1422 of the first extension electrode 142 and the second side 1222 of the second semiconductor layer 122. The third shortest distance and the fourth shortest distance may be the same or different. The third shortest distance or the fourth shortest distance comprises a distance between 1 μm and 10 μm, preferably between 1 μm and 6 μm.

In another embodiment of the present invention, as shown in FIG. 1, a first short side of the first side 1221 of the second semiconductor layer 122 and the first side S1 of the transparent conductive layer 22 includes a fifth shortest distance, wherein The five shortest distances comprise a distance between 1 μm and 15 μm, preferably between 3 μm and 8 μm.

In another embodiment of the present invention, as shown in FIG. 1, a first shortest distance is included between the first side 1421 of the first extension electrode 142 and the first side 1221 of the second semiconductor layer 122. The first short side of one of the first side 1221 of the second semiconductor layer 122 and the first side S1 of the transparent conductive layer 22 includes a fifth shortest distance, wherein the third shortest distance is the same as the fifth shortest distance, and the third shortest distance is greater than the fifth The shortest distance or the third shortest distance is less than the fifth shortest distance.

As shown in Figs. 1 and 2, a plurality of current blocking layers 211' are discontinuously formed on the surface of the first semiconductor layer 121. A plurality of current blocking layers 211' and current blocking layers 211 are discontinuously formed on the surface of the first semiconductor layer 121. The first electrode pad 141 and the first extension electrode 142 cover the current blocking layer 211 and the plurality of current blocking layers 211'.

Figure 6 is a schematic view showing the structure of a bulb 4 according to another embodiment of the present invention. The light bulb 4 includes a lamp cover 602, a mirror 604, a light emitting module 610, a lamp holder 612, a heat sink 614, a connecting portion 616, and an electrical connection member 618. The light emitting module 610 includes a carrying portion 606, and one or more light emitting units 608 are located on the carrying portion 606. One or a plurality of the light emitting units 608 can be the light emitting elements 1 in the foregoing embodiments.

The examples are set forth to illustrate the present invention and are not intended to limit the scope of the present invention. Any changes or modifications to this creation that are made by anyone without departing from the spirit and scope of this creation.

1‧‧‧Lighting elements
10‧‧‧Substrate
12‧‧‧Semiconductor laminate
121‧‧‧First semiconductor layer
122‧‧‧Second semiconductor layer
1221‧‧‧ first side
1222‧‧‧ second side
123‧‧‧Active layer
14‧‧‧First electrode
141‧‧‧First electrode pad
142‧‧‧First extended electrode
1421‧‧‧ first side
1422‧‧‧ second side
16‧‧‧second electrode
161‧‧‧Second electrode pad
161s‧‧‧ side
162‧‧‧Second extension electrode
1621‧‧‧ first part
1622‧‧‧Part 2
20‧‧‧Protective layer
201‧‧‧ openings
202‧‧‧ openings
211‧‧‧First current barrier layer
2120‧‧‧ openings
2120s‧‧‧ side surface
211'‧‧‧First current barrier layer
212‧‧‧Second current blocking layer
22‧‧‧Transparent conductive layer
220‧‧‧ openings
220s‧‧‧ side surface
S1‧‧‧ first side
S2‧‧‧ second side
4‧‧‧Light bulb
602‧‧‧shade
604‧‧‧Mirror
606‧‧‧Loading Department
608‧‧‧Lighting unit
610‧‧‧Lighting Module
612‧‧‧ lamp holder
614‧‧‧ Heat sink
616‧‧‧Connecting Department
618‧‧‧Electrical connection elements

Fig. 1 is a perspective view of a light-emitting element 1 disclosed in an embodiment of the present invention.

Fig. 2 is a cross-sectional view of the light-emitting element 1 taken along the line A-A' in Fig. 1.

Fig. 3 is a partially enlarged view of the light-emitting element 1 taken along the line B-B' in Fig. 1.

Fig. 4 is a partially enlarged view of the light-emitting element 1 disclosed in Fig. 1 in an embodiment of the present invention.

Fig. 5 is a partially enlarged view of the light-emitting element 1 disclosed in Fig. 1 in an embodiment of the present invention.

Figure 6 is a schematic view showing the structure of a bulb 4 disclosed in an embodiment of the present invention.

122‧‧‧Second semiconductor layer

161‧‧‧Second electrode pad

161s‧‧‧ side surface

212‧‧‧ Current Barrier

2120s‧‧‧ side surface

2120‧‧‧ first opening

22‧‧‧Transparent conductive layer

220s‧‧‧ side surface

220‧‧‧second opening

Claims (10)

a light emitting device comprising: a semiconductor stack having a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer; an electrode pad located on the second semiconductor layer a current blocking layer having a first opening on the second semiconductor layer to surround the electrode pad; a transparent conductive layer on the current blocking layer, the transparent conductive layer having a second opening to surround the electrode And an extension electrode extending outward from the electrode pad, wherein the extension electrode includes a first portion in the first opening and the second opening, and a second portion is on the transparent conductive layer. The light-emitting element of claim 1, wherein the electrode pad comprises a metal layer having a work function greater than 4 eV to form a Schottky contact with the second semiconductor layer. The illuminating element of claim 1, wherein the first opening comprises a first side, the second opening comprises a second side, and the electrode pad comprises a third side, the first side A distance greater than 3 μm is included between the edge and the third side. The illuminating device of claim 1, wherein the first opening comprises a first width, the second opening comprises a second width, the electrode pad comprises a third width, and the extension electrode comprises a fourth a width, the first width being greater than the third width and the fourth width. The illuminating element of claim 1, wherein the first opening comprises a first width, and the second opening comprises a second width, the first width being different from the second width. The illuminating device of claim 1, wherein the extending electrode comprises a first portion and a second portion, and the first portion of the extending electrode comprises a first end connected to the electrode pad, The first end includes a second end having a width greater than the first portion, and the second end is coupled to the second portion of the extended electrode. The light-emitting element according to claim 1, wherein the electrode pad comprises a circle or a rectangle, and the rectangle comprises an arc angle. The light-emitting element of claim 5, wherein in an stacking direction of one of the semiconductor layers, between an upper surface of the first portion of the extended electrode and an upper surface of the second portion Contains a first order difference. The light-emitting element of claim 6, wherein the electrode pad comprises a perimeter, the first portion of the extended electrode comprises a thickness or a width from the perimeter of the electrode pad to the extended electrode The second part is getting smaller. The illuminating element of claim 1, wherein the first opening of the current blocking layer and the second opening of the transparent conductive layer each comprise a side surface, the side surface being a slope.