TWM550910U - LED packaging element and multiple color temperature illumination device - Google Patents

Description

Light-emitting diode package component and multiple color temperature lighting device

The invention relates to a light-emitting diode package component and a multi-color temperature illumination device, in particular to a light-emitting diode package component and a multi-color temperature illumination device using a flip-chip light-emitting diode die.

The light-emitting diode is a commonly used light-emitting element of various lighting devices, and has the advantages of high brightness, power saving, long service life and the like. However, since the light-emitting diode is a monochromatic light source, the use of the light-emitting diode as a light-emitting source in the illumination device is more likely to be limited in the performance of the light source color. On the other hand, there are many different types of process technologies for the production of light-emitting diodes and lighting devices. However, how to continuously and effectively improve the yield and simplify the process is still a concern.

Accordingly, it is an object of the present invention to provide a light emitting diode package component that solves the aforementioned problems.

Therefore, the novel light emitting diode package component comprises a flip chip light emitting diode die and a wavelength conversion layer. The flip-chip light-emitting diode die includes a light-emitting body and two electrodes, the light-emitting body has a top surface, a bottom surface on an opposite side of the top surface, and a side surface between the top surface and the bottom surface, The electrodes are spaced apart from each other on the bottom surface of the light-emitting body. The wavelength conversion layer contains a phosphor powder and is formed in a mold-forming manner, and the wavelength conversion layer covers the top surface and the side surface of the light-emitting body without covering the electrodes.

In some embodiments, the wavelength conversion layer covers one of a rectangular parallelepiped shape and a cubic shape after the crystal chip of the flip-chip light-emitting diode.

In some embodiments, the wavelength conversion layer covers the illuminating body to a thickness of not less than 0.12 mm.

Another object of the present invention is to provide a multiple color temperature illumination device having the above-described light emitting diode package component.

Therefore, the novel multi-color temperature illumination device comprises a substrate, a conductive line disposed on the substrate, and a plurality of light emitting diode package components as described above. The light emitting diode package components are disposed on the substrate and electrically connected to the conductive line, and the light emitting color temperatures of the light emitting diode package components are different from each other. The LED package components are controlled and individually present respective switch states and brightness states.

In some implementations, the multiple color temperature illumination device includes two light emitting diode package components, wherein one of the light emitting diode package components has a light color temperature of 3000K, and the other light emitting diode package component has a light color temperature of 6500K. When the one of the light emitting diode package components is controlled to be turned on and the other is controlled to be turned off, the multiple color temperature illumination device may exhibit one of 3000K color temperature and 6500K color temperature as a whole, when the light emitting diode packages are The controlled simultaneous opening of the components causes the multiple color temperature illumination device to exhibit a color temperature between 3000K and 6500K as a whole.

The present invention has at least the following effects: the LED package component is a single chip scale package (CSP) formed by molding the flip chip diode and the wavelength conversion layer by mode formation. The component is conveniently disposed on the circuit board by surface-mount technology (SMT), and the wire bonding process and the dispensing process are eliminated, which helps to simplify the process improvement rate. By providing a plurality of light-emitting diode package elements having different light-emitting color temperatures in the multiple color temperature illumination device, it is possible to generate a light-mixing effect through the light-emission control of the light-emitting diode package element, and exhibit a variety of light-emitting colors.

Referring to FIG. 1 to FIG. 3 , an embodiment of the multi-color temperature illumination device 100 includes a substrate 1 , a conductive line 2 , and two LED package components 3 . The substrate 1 can be made of a material having good heat transfer property and electrical insulation, and a recess 11 is formed on the top surface thereof to serve as a space for accommodating the LED package elements 3. The conductive line 2 is disposed on the substrate 1 and is connected to the LED package elements 3 to electrically connect the LED package element 3 to an external circuit (not shown). In this embodiment, the guiding line 2 extends from the recess 11 to the outside of the substrate 1. However, the implementation of the guiding line 2 can be set correspondingly according to actual needs, and is not limited to the specific embodiment.

The illuminating color temperatures of the illuminating diode packages 3 are different from each other, and are disposed in the groove 11 of the substrate 1 and electrically connected to the guiding line 2 . Each of the LED package components 3 includes a flip chip LED 4 and a wavelength conversion layer 5. The flip chip LED 4 includes a light emitting body 41 and two electrodes 42. The light-emitting body 41 is a main light-emitting structure of the flip-chip diode crystal 4, and can be made of a semiconductor light-emitting material such as gallium nitride (GaN) or gallium arsenide (GaAs). A layered stacked structure, such as an epitaxial substrate, an N-type semiconductor layer, a multiple quantum well layer, or a P-type semiconductor layer, which is not drawn in the drawing, has a rectangular parallelepiped shape or a cubic shape in appearance, and has a top surface 411, a top surface and a top surface 411 is located on the opposite side of the bottom surface 412 and a side surface 413 between the top surface 411 and the bottom surface 412. The top surface 411 and the side surface 413 are the main light-emitting surfaces of the light-emitting body 41. The electrodes 42 are spaced apart from each other on the bottom surface 412 of the light-emitting body 41, and are electrically connected to the conductive line 2 as the positive electrode of the flip-chip diode 4 With a negative electrode. The wavelength conversion layer 5 can be directly formed on the flip chip diode 4 by a mold-forming method using a transparent colloid material such as an epoxy resin, a silicone material, a glass material or a ceramic material. Specifically, the wavelength conversion layer 5 covers the top surface 411 and the side surface 413 of the light-emitting body 41 without covering the electrodes 42. The wavelength conversion layer 5 contains phosphor powder, thereby adjusting the light-emitting diode. The illuminating color temperature and luminescent color of the body package component 3.

For example, in a white light illumination application, the flip-chip light-emitting diode die 4 can adopt a blue crystal grain mainly composed of gallium nitride, and is mixed with the yellow phosphor powder in the wavelength conversion layer 5, so that The blue light emitted by the light-emitting body 41 of the flip-chip light-emitting diode die 4 and the yellow light generated by the yellow phosphor powder after being excited are combined to form white light, and the color temperature of the light-emitting color can be mixed by different colors. The light ratio is adjusted accordingly. In a specific implementation, the illuminating color temperature of one of the LED package elements 3 of the multiple color temperature illumination device 100 may be 3000K (yellow light), and the illuminating color temperature of the other LED package component 3 is 6500K (cold white light), the two LED package components 3 can be turned on and off and brightness controlled by a digital logic circuit (not shown) to control the LED package components 3 The multiple color temperature illumination device 100 can display multiple color temperature states ranging from 3000K to 6500K, for example, the logic state 1 is the color temperature of 6500K, and the light emitting diode package component is 3 points. The light-emitting diode package element 3 with a bright color temperature of 3000K is turned off to present a cool white color temperature of 6500K as a whole, and the logic state 2 is the light-emitting diode package component 3 with a color temperature of 6500K and the color temperature of 3000K is turned off. 3 lights up and presents a yellow color temperature of 3000K overall, logic state 3 is that two light-emitting diode package components 3 are all lit and the overall warm white color temperature of 4200K is presented, and logic state 4 is two light-emitting diode package elements. 3 4200K warm white color temperature which is lighted but both brightness is reduced and the overall brightness is lower. The above logic states 1~4 can be controlled by various logic circuits by various logic circuits, for example, the logic state can be made 1~ 4 sequentially switches and cycles from logic state 1 after the end of the four logic state switches, but is not limited to such an embodiment, so that multiple color temperature control suitable for various lighting applications can be realized.

On the other hand, in the embodiment, the wavelength conversion layer 5 covers one of a rectangular parallelepiped shape and a cubic shape after the flip chip light-emitting diode die 4 is covered, and the wavelength conversion layer 5 covers the light-emitting body. The thicknesses T1 and T2 of 41 are not less than 0.12 mm, which allows the light-emitting diode package component 3 to realize a small-volume chip scale package (CSP) and maintain uniform luminance and luminescent color. It is to be noted that, according to actual needs, the number of the LED package components 3 used in the multiple color temperature illumination device 100 and the illuminating color temperature of each of the LED package components 3 can be adjusted according to actual needs. Not limited to the foregoing embodiments.

Hereinafter, a method of manufacturing the LED package element 3 will be described with reference to the flowchart of FIG. 4 and other related drawings.

Referring to FIG. 3 and FIG. 5, first, in step S1, a mold 200 and a flip-chip light-emitting diode die 4 are first provided. The mold 200 can be disposed in a processing device (not shown), and The template 201 and an upper template 202 that can move up and down with respect to the lower template 201 are generally included. The top surface of the lower template 201 forms a recess 201 on an ejection mechanism 204. The specific structure of the flip-chip diode die 4 is as shown in FIG. 3, but the wavelength conversion has not been covered in this step. Layer 5.

Next, in step S2, a colloid 300 containing phosphor powder may be disposed in the recess 203 of the lower template 201 of the mold 200 as shown in FIG. 5, and the colloid 300 may be filled with fluorescence, for example, by infusion. A resin of powder is injected into the groove 201.

Referring to FIG. 6 and FIG. 7, in step S3, the flip-chip diode die 4 is placed on the central portion of the surface of the colloid 300 with the electrodes 42 and the bottom surface 412 facing upward, and then the colloid 300 is heated. The colloid 300 is slightly softened, and the upper template 202 is lowered as shown in FIG. 7 to press the flip-chip diode die 4 into the colloid 300 by the upper template 202, and the colloid 300 is made. The top surface 411 and the side surface 413 of the light emitting body 41 are covered without covering the electrodes 42.

Referring to FIG. 8 and FIG. 9, the colloid 300 can be cured by heating in step S4. At this time, the colloid 300 is cured to become the wavelength conversion layer 5 of the LED package component 3. The light emitting diode package component 3 is completed in a substantially processed manner. Finally, in step S5, the LED package component 3 can be ejected upward by the ejecting mechanism 204 as shown in FIG. 9, so that the LED package component 3 is exposed outside the top surface of the lower template 201. However, the LED package component 3 can be removed from the lower die plate 201 by adhesive film bonding or the like to complete all processing procedures of the LED package component 3.

According to the foregoing description, the LED package element 3 of the present invention is formed into a chip scale package by a series of die-forming methods of the flip-chip diode die 4 and the wavelength conversion layer 5 . A single component, referred to as CSP, can be easily placed on the circuit board by surface-mount technology (SMT), eliminating the need for wire bonding and dispensing processes, which helps simplify process yield. In addition, by providing a plurality of light-emitting diode package elements 3 having different light-emitting color temperatures in the multiple color temperature illumination device 100, it is possible to generate a light-mixing effect through the light-emission control of each of the light-emitting diode package elements 3, and exhibit a variety of colors. Luminous color. Therefore, the novel light-emitting diode package element 3 and its manufacturing method, and the embodiment of the multiple color temperature illumination device 100 having the light-emitting diode package element 3 can achieve the object of the present invention.

However, the above is only the embodiment of the present invention, and when it is not possible to limit the scope of the present invention, all the simple equivalent changes and modifications according to the scope of the patent application and the contents of the patent specification are still This new patent covers the scope.

100‧‧‧Multi color temperature lighting device
200‧‧‧Mold
201‧‧‧Next template
202‧‧‧Upper template
203‧‧‧ Groove
204‧‧‧Out of the agency
300‧‧‧colloid
1‧‧‧Substrate
11‧‧‧ Groove
2‧‧‧Guided line
3‧‧‧Lighting diode package components
4‧‧‧Flip-chip luminescent diode grain
41‧‧‧Lighting subject
411‧‧‧ top surface
412‧‧‧ bottom
413‧‧‧ side
42‧‧‧Electrode
5‧‧‧wavelength conversion layer
S1~S5‧‧‧ Process steps
T1‧‧‧ thickness
T2‧‧‧ thickness

Other features and effects of the present invention will be apparent from the following description of the drawings, wherein: FIG. 1 is a top view illustrating an embodiment of the novel multi-color temperature illumination device; FIG. 2 is a view along FIG. FIG. 3 is a side view illustrating an embodiment of the novel light emitting diode package component; FIG. 4 is a flow chart illustrating an implementation of the method of fabricating the light emitting diode package component; Examples: Figures 5 to 9 are schematic views showing the steps of fabricating the LED package components.

100‧‧‧Multi color temperature lighting device

1‧‧‧Substrate

11‧‧‧ Groove

2‧‧‧Guided line

3‧‧‧Lighting diode package components

Claims (5)

A light-emitting diode package component comprising: a flip-chip light-emitting diode die comprising a light-emitting body and two electrodes, the light-emitting body having a top surface, a bottom surface on an opposite side of the top surface, and a a side surface between the top surface and the bottom surface, the electrodes are spaced apart from each other on the bottom surface of the light emitting body; and a wavelength conversion layer is formed in a mold forming manner, the wavelength conversion layer covering the top of the light emitting body The surface and the side surface are not covered by the electrodes, and the wavelength conversion layer contains phosphor powder. The light-emitting diode package device according to claim 1, wherein the wavelength conversion layer covers one of a rectangular parallelepiped shape and a cubic shape after covering the crystal chip of the flip-chip light-emitting diode. The light emitting diode package component of claim 1, wherein the wavelength conversion layer covers the light emitting body to have a thickness of not less than 0.12 mm. A multiple color temperature illumination device comprising: a substrate; a conductive line disposed on the substrate; and a plurality of light emitting diode package components according to any one of claims 1 to 3, disposed on the base The light-emitting color temperature of the light-emitting diode package components is different from each other, and the light-emitting diode package components are controlled to individually display corresponding switch states and brightness states. The multiple color temperature illumination device of claim 4, comprising two light emitting diode package components, wherein the light emitting color temperature of one light emitting diode package component is 3000K, and the light emitting color temperature of another light emitting diode package component is 6500K, When the one of the light emitting diode package components is controlled to be turned on and the other is controlled to be turned off, the multiple color temperature illumination device may exhibit one of 3000K color temperature and 6500K color temperature as a whole, when the light emitting diode packages are The controlled simultaneous opening of the components causes the multiple color temperature illumination device to exhibit a color temperature between 3000K and 6500K as a whole.