TWM540391U - Seal ring device - Google Patents

Description

Seal ring device

This creation relates to a seal ring device, and more particularly to a user of a plasma etch process device that can be used in semiconductors.

Generally, in the plasma etching process of semiconductor, in order to prevent helium leakage, a ring-shaped groove is usually formed on the side edge of the wafer base, and an EPOXY (epoxide) coating is laid in the groove. In order to prevent the leakage of helium. However, since the EPOXY (epoxide) coating is eroded by contact with plasma and process gas for a long time, causing leakage of helium, it is necessary to replace an entire wafer base to cause machine capacity. Losses and maintenance costs increase. Therefore, in order to improve the above-mentioned shortcomings, the creators of this case have devoted themselves to research and developed a "seal ring device" to effectively improve the shortcomings of the conventional use.

The main purpose of this creation is to apply to the plasma etching process equipment of semiconductors, to avoid the erosion of the EPOXY (epoxide) coating on the wafer pedestal, causing the leakage of helium and causing the wafer pedestal to be replaced in advance. The installation of specially designed sealing ring can achieve effective sealing, prevent helium leakage, regular replacement of the sealing ring and cost saving. For the above purposes, the present invention is a seal ring device comprising: a seal ring body having a socket region; a first surface disposed on a top surface of the seal ring body, the width of the first surface being Between 0.9 mm and 1.3 mm; a second surface disposed on the bottom surface of the sealing ring body and opposite to the first surface, the width of the second surface is between 0.9 mm and 1.3 mm; a first plane disposed on the inner edge of the sealing ring and opposite to the first plane of the sleeve, the height of the first plane is between 2.6 mm and 3.0 mm; one is disposed on the outer edge of the sealing ring and the first a plane is oppositely disposed in a second plane, the height of the second plane is between 2.6 mm and 3.0 mm; and two are respectively disposed on the first lead angle of the sealing ring body, and each first guiding angle is located at the first plane Two sides of the first surface are connected to one end of the first plane and the second plane; two are respectively disposed on the second lead angle of the sealing ring body, and each of the second guiding angles is located on both sides of the second surface and The other ends of the first plane and the second plane are connected. In an embodiment of the present invention, the sealing ring system is integrally formed with the first surface, the second surface, the first plane, the second plane, the first guiding angle and the second guiding angle. In one embodiment of the present invention, the seal ring body has a diameter of 285 mm. In one embodiment of the present invention, the sealing ring system is selected from the group consisting of high-purity, low-particle-produced DuPont perfluorinated rubber, which has excellent resistance to plasma environment and etching process gas mainly composed of fluorine and oxygen. It has high temperature stability, high mechanical strength and is suitable for both static and dynamic points. In one embodiment of the present invention, the width of the first surface is preferably 1.1 mm. In an embodiment of the present invention, the width of the second surface is preferably 1.1 mm. In one embodiment of the present invention, the height of the first plane is preferably 2.8 mm. In one embodiment of the present invention, the height of the second plane is preferably 2.8 mm. In an embodiment of the present invention, the angle R of each of the first guide angles is between 0.2 and 0.5, and 0.3 is optimal. In an embodiment of the present invention, the angle R of each of the second guide angles is between 0.2 and 0.5, and 0.3 is optimal.

Please refer to the "Figures 1, 2, 3 and 4" for the three-dimensional appearance of the creation, the schematic diagram of the profile of the creation, the schematic diagram of the combination of the creation and the wafer base, and the creation and wafer. Schematic diagram of the profile state after the pedestal is combined. As shown in the figure: the present invention is a seal ring device comprising at least a seal ring body 1, a first surface 2, a second surface 3, a first plane 4, a second plane 5, and a second guide. An angle 6 and two second guide angles 7 are formed, and the seal ring body 1 is coupled to the first surface 2, the second surface 3, the first plane 4, the second plane 5, and the first guide angle 6 And the second lead angle 7 is integrally formed. The seal ring body 1 mentioned above has a set of joints 11 and the diameter of the seal ring body is 285 mm, and the seal ring body 1 is selected from high-purity, low-particle-produced DuPont perfluorinated rubber. It has excellent resistance to plasma environment and etching process gas mainly composed of fluorine and oxygen. It has high temperature stability and high mechanical strength. It is a suitable material for static and dynamic points. The first surface 2 is disposed on the top surface of the sealing ring body 1, and the width of the first surface 2 is between 0.9 mm and 1.3 mm, and most preferably 1.1 mm. The second surface 3 is disposed on the bottom surface of the sealing ring body 1 and disposed opposite to the first surface 2, and the width of the second surface 3 is between 0.9 mm and 1.3 mm, and is 1.1 mm. For the best. The first plane 4 is disposed on the inner edge of the sealing ring body 1 and opposite to the socket region 11, and the height of the first plane 4 is between 2.6 mm and 3.0 mm, and 2.8 mm is optimal. . The second plane 5 is disposed on the outer edge of the sealing ring body 1 and disposed opposite to the first plane 4, and the height of the second plane 5 is between 2.6 mm and 3.0 mm, and is 2.8. Mm is the best. Each of the first guiding angles 6 is disposed on the sealing ring body 1 , and each of the first guiding angles 6 is located on both sides of the first surface 2 and is connected to one end of the first plane 4 and the second plane 5 , and The angle R of each of the first guide angles 6 is between 0.2 and 0.5, and is preferably 0.3. Each of the second lead angles 7 is disposed on the seal ring body 1 , and each of the second lead angles 7 is located on both sides of the second surface 3 and is connected to the other ends of the first plane 4 and the second plane 5 . The angle R of each of the second lead angles 7 is between 0.2 and 0.5, and the optimum is 0.3. If so, a completely new sealing ring device is constructed by the above structure. When the present invention is used, the sealing ring body 1 can be sleeved in the receiving groove 81 of a wafer base 8 by using the socket region 11 and one surface of the first plane 4 (not shown). During the introduction, it is necessary to maintain the non-rotating surface of the sealing ring body 1. After preliminary installation, the gap of the sealing ring body 1 is inspected by hand, so that the sealing ring body 1 utilizes its first plane 4, the first guiding angle 6 and the second guiding angle 7 In combination with the mating groove 81 of the wafer base 8, the width of the first surface 2 and the second surface 3 is utilized to avoid affecting the mounting of the parts beside the wafer base 8, and at the same time the first plane 4 and the second In addition to the margin of the plane 5 to prevent helium leakage, it can also resist the erosion of the plasma, so that the sealing ring body 1 can be tightly coupled with the wafer base 8 when installed, and completely covered with electricity. The plasma etching process equipment (not shown) achieves an effective seal. Since the sealing ring body 1 of the present invention has high purity, low particle generation and plasma resistance, it can be applied to the OTCH process of the Oxygen/Fluorine atmosphere to prevent helium leakage, and the wafer base 8 is prevented from being electrically charged. The slurry is eroded and the sealing ring body 1 can be replaced periodically and the cost saving effect is achieved. In summary, the creation of the sealing ring device can effectively improve various shortcomings of the conventional use, and can be applied to the plasma etching process equipment of the semiconductor, and avoid the leakage of the EPOXY (epoxide) coating of the wafer base caused by the erosion of the helium gas. Leading to the wafer base replacement in advance, and by installing a specially designed sealing ring, it can achieve effective sealing, prevent helium leakage, periodically replace the sealing ring and save cost; thus making the creation of this creation more progressive and practical It is more in line with the needs of consumers, and it has indeed met the requirements for the creation of a patent application, and has filed a patent application in accordance with the law. However, the above descriptions are only preferred embodiments of the present invention, and the scope of the present invention cannot be limited by this; therefore, the simple equivalent changes and modifications made by the scope of the patent application and the contents of the new manual are All should remain within the scope of this creation patent.

1‧‧‧Seal ring body 2‧‧‧ first surface 3‧‧‧ second surface 4‧‧‧ first plane 5‧‧‧ second plane 6‧‧‧ first lead angle 7‧‧‧ second guide Corner 8‧‧‧ wafer base 81‧‧‧ inlay slot

Figure 1 is a schematic view of the three-dimensional appearance of the creation. Figure 2 is a schematic diagram of the profile state of the creation. Figure 3 is a schematic diagram of the combination of the creation and the wafer pedestal. Figure 4 is a schematic diagram showing the state of the profile after the creation of the wafer base.

1‧‧‧Seal ring body

2‧‧‧ first surface

3‧‧‧ second surface

4‧‧‧ first plane

5‧‧‧ second plane

6‧‧‧First lead angle

7‧‧‧second lead angle

Claims (10)

A seal ring device comprising: a seal ring body having a set of joint regions; a first surface disposed on a top surface of the seal ring body, wherein the first surface has a width of between 0.9 mm and 1.3 a second surface disposed on the bottom surface of the sealing ring body and disposed opposite to the first surface, and the width of the second surface is between 0.9 mm and 1.3 mm; The plane is disposed on the inner edge of the sealing ring body and opposite to the socket area, and the height of the first plane is between 2.6 mm and 3.0 mm; and a second plane is disposed on the body of the sealing ring The outer edge is disposed opposite to the first plane, and the height of the second plane is between 2.6 mm and 3.0 mm; the second first lead angle is respectively disposed on the sealing ring body, and each first a guiding angle is located on both sides of the first surface and connected to one end of the first plane and the second plane; and two second guiding angles are respectively disposed on the sealing ring body, and each second guiding angle is located at the Both sides of the second surface are connected to the other ends of the first plane and the second plane. The seal ring device of claim 1, wherein the seal ring system and the first surface, the second surface, the first plane, the second plane, the first guide angle, and the first The two lead angles are integrally formed. The seal ring device of claim 2, wherein the seal ring body has a diameter of 285 mm. The seal ring device according to claim 3, wherein the seal ring system is selected from the group consisting of high-purity, low-particle-produced DuPont perfluorinated rubber for plasma environment and etching mainly composed of fluorine and oxygen. The process gas has excellent resistance; it has high temperature stability and high mechanical strength, and is a material suitable for static and dynamic points. The seal ring device of claim 4, wherein the width of the first surface is preferably 1.1 mm. The seal ring device of claim 5, wherein the width of the second surface is preferably 1.1 mm. The seal ring device of claim 6, wherein the height of the first plane is 2.8 mm. The seal ring device of claim 7, wherein the height of the second plane is 2.8 mm. The seal ring device according to claim 8, wherein the angle R of each of the first guide angles is between 0.2 and 0.5, and 0.3 is optimal. The seal ring device according to claim 9, wherein the angle R of each of the second guide angles is between 0.2 and 0.5, and 0.3 is optimal.