TWM587360U - Sealing ring - Google Patents

Abstract

A sealing ring disposed in a semiconductor manufacturing equipment is provided, including a main body and a first extending portion. The first extending portion protrudes from the main body toward the interior of the sealing ring. Specifically, the first extending portion is clamped between a wafer seat and a connecting layer of the semiconductor manufacturing equipment, so as to prevent the connecting layer from corrosion by a processing fluid.

Description

Seal ring

The present invention relates to a sealing ring, and more particularly to a sealing ring used in semiconductor process equipment.

First, please refer to FIGS. 1 and 2, wherein FIG. 1 shows a schematic diagram of a conventional semiconductor process equipment 1 performing a semiconductor process on a wafer 2 in a cavity 30, and FIG. 2 shows a part A in FIG. 1. Zoom in.

As shown in FIGS. 1 and 2, the aforementioned semiconductor processing equipment 1 is, for example, a plasma etching equipment, which mainly includes a crystal base 10 and an extended cover element 20. The aforementioned wafer base 10 is disposed inside a cavity 30 and includes a wafer base body 11, a fluid supply unit 13 and a carrier element 12, wherein the carrier element 12 is disposed on the wafer base body 11 and the wafer 2 is disposed on Above the carrier element 12, a fluid supply unit 13 is disposed inside the wafer body 11 and can pass through the carrier element 12 to provide a fluid 3 to the wafer 2; a groove 14 is formed in the wafer base 10. A side surface 15 of the crystal base is located at the junction between the crystal base body 11 and the bearing element 12.

Please continue to refer to FIG. 2. In the conventional technology, since there is a tiny gap at the connection between the base body 11 and the bearing element 12, the fluid 3 tends to easily leak through the gap through the gap 14.

FIG. 3 is a schematic view showing that the adhesive 14 is filled in the trench 14 in FIG. 2, and FIG. 4 is a schematic view showing that the adhesive 4 in FIG. 3 is etched by plasma particles and lost. As shown in Figure 3, in order to prevent the leakage of fluid 3, the adhesive 4 can be filled in the aforementioned groove 14. However, since the adhesive 4 will be eroded by the plasma particles during the semiconductor manufacturing process (Figure 4), It will lose its sealing effect after use. In addition, since the adhesive 4 is difficult to remove and cannot be reused after being damaged, it is not conducive to regular reinforcement or replacement, which will seriously affect the yield of the overall process.

In view of the foregoing conventional problems, an embodiment of the present invention provides a sealing ring provided in a semiconductor process device, wherein the semiconductor process device includes a connection layer and a wafer base, and the wafer base includes a wafer body and The carrier layer is used to carry a carrier element of the wafer. The connection layer is disposed between the wafer body and the carrier element and includes a metal conductor. The seal ring includes a body and a first extension portion. In particular, the first extension portion protrudes from the body toward an inside of one of the seal rings, wherein the first extension portion is embedded between the crystal base body and the metal conductor to prevent a process fluid from eroding the foregoing Connect elements such as electrodes in the layer.

In an embodiment, the sealing ring further includes a first protruding structure protruding from the first extending portion toward the inner direction, and a thickness of the first protruding structure is smaller than a thickness of the first extending portion.

In an embodiment, two recessed areas are formed between the first protruding structure and the first extending portion, and the recessed areas are located on opposite sides of the first protruding structure.

In an embodiment, the seal ring further includes a second extension portion and a groove. The second extension portion protrudes from the body toward an inside of the seal ring, and is embedded in the crystal base body and the foregoing. Between the metal conductors to prevent a process fluid from eroding the connection layer, the groove is formed between the first and second extensions to accommodate the metal conductor.

In one embodiment, the sealing ring further has a second protruding structure protruding from the second extending portion toward the inner direction, and a thickness of the second protruding structure is smaller than a thickness of the second extending portion.

In an embodiment, the sealing ring further includes a top surface, which abuts the bearing element and connects the body, the second extension portion, and the second protruding structure.

In an embodiment, a length of the first protruding portion in a radial direction of one of the seal rings is greater than or equal to a length of the second protruding portion in the radial direction.

In one embodiment, a recessed area is formed between the second protruding structure and the second extending portion, and the recessed area is adjacent to the metal conductor.

In an embodiment, the seal ring further includes a third extension portion protruding from the body toward a bottom side of the seal ring, wherein the third extension portion is exposed on an outer surface of the seal ring, and The third extension portion has a chamfered surface, which corresponds to a chamfered structure of the aforementioned crystal base body.

In one embodiment, the chamfered surface is an inclined surface or a curved surface.

The sealing ring of this creative embodiment will be described below. However, it can be easily understood that this creative embodiment provides many suitable creative concepts and can be implemented in a wide variety of specific backgrounds. The specific embodiments disclosed are only used to illustrate the use of the creation in a specific way, and are not intended to limit the scope of the creation.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by ordinary artisans to whom this disclosure belongs. It is understandable that these terms, such as those defined in commonly used dictionaries, should be interpreted to have a meaning consistent with the relevant technology and the background or context of this disclosure, and should not be in an idealized or overly formal manner. Interpreted, unless specifically defined here.

The foregoing and other technical contents, features, and effects of this creation will be clearly presented in the following detailed description of a preferred embodiment with reference to the drawings. The directional terms mentioned in the following embodiments, such as: up, down, left, right, front, or rear, are only directions referring to the attached drawings. Therefore, the directional terms used in the embodiments are used to explain and not to limit the present invention.

Please refer to FIG. 5 and FIG. 6 together, where FIG. 5 shows a schematic diagram of the semiconductor process equipment according to an embodiment of the present invention to implement a semiconductor process on a wafer W, and FIG. 6 shows a part of the semiconductor process equipment shown in FIG. 5 Enlarged section. As shown in FIGS. 5 and 6, the semiconductor device in this embodiment is, for example, a plasma etching device, which mainly includes a crystal base 50 and an extending covering element 60 surrounding one of the foregoing crystal bases 50. The foregoing extending covering element 60 It can include a focus ring made of ceramic, silicon carbide, or quartz to facilitate the plasma etching process.

It should be particularly noted that the aforementioned wafer base 50 mainly includes a wafer body 51, a carrier element 52, and a connection layer 53, wherein the connection layer 53 is disposed between the wafer body 51 and the carrier element 52, and the wafer W is Is arranged on the bearing element 52; in addition, an annular groove 54 is formed between the crystal base body 51, the bearing element 52 and the connection layer 53, and a replaceable seal is filled in the groove 54 Ring R to prevent process fluid (such as plasma gas) from eroding into the electrodes and other components in the connection layer 53 through the groove 54 to prevent micro-Arcing, electricity leakage, abnormal voltage, or gas (such as (Helium) leakage and other conditions.

It can be seen from FIG. 6 that two metal conductors E1 and E2 (for example, aluminum electrodes) are provided inside the connection layer 53 of this embodiment, and an adhesive G is filled around the two metal conductors E1 and E2. It is used for bonding the crystal base body 51 and the bearing element 52. In an embodiment, the aforementioned adhesive G is, for example, a thermal glue. In addition, an insulating layer C is coated on the surface of the base body 51, which may contain, for example, alumina material, and is connected to the connection layer 53 and the sealing ring R, so as to ensure that the electrodes inside the connection layer 53 do not contact the base body 51. The internal conductor is shorted.

It should be noted that a chamfered structure 511 is formed on the edge of the aforesaid wafer body 51, and the groove 54 has a trapezoidal cross-section. The seal ring R is embedded in the groove 54 and is connected to the chamfered structure 511. adaptation. However, since the chamfered structure 511 is gradually expanded toward the outer side of the groove 54, the sealing ring R may lose its elasticity after being used for a long time or is eroded and loosen along the chamfered structure 511 to reduce its sealing effect.

Please refer to FIG. 7, where FIG. 7 is an enlarged partial cross-sectional view of a semiconductor process equipment according to another embodiment of the present invention. The main difference between this embodiment and the embodiment in FIG. 6 lies in that: the metal conductors E1 and E2 inside the connection layer 53 penetrate through the adhesive G and are exposed on one side of the connection layer 53, and the seal ring R has a body R1 And an extension portion R2, wherein the extension portion R2 protrudes from the body R1 toward the inner side of the seal ring R and contacts the aforementioned metal conductors E1 and E2, wherein the thickness h of the extension portion R2 in the vertical direction is smaller than the body R1 in the vertical direction On the thickness.

It should be particularly noted that, in this embodiment, the size of the adhesive G in the horizontal direction is appropriately reduced, so that the seal ring R can further extend toward the inner direction and be clamped between the base body 51 and the bearing element 52. As a result, the bonding strength between the seal ring R and the crystal base 50 can be improved, and the sealing ring R can be prevented from falling off from the side of the crystal base 50 to greatly improve its sealing effect.

Please also refer to Figs. 8 to 10, wherein Fig. 8 shows an enlarged partial sectional view of a sealing ring 70 according to another embodiment of the present invention before being combined with a semiconductor process equipment, and Fig. 9 shows the seal in Fig. 8 An enlarged partial cross-sectional view of the ring 70 when it enters the groove 54 of the semiconductor process equipment. FIG. 10 is an enlarged partial cross-sectional view of the seal ring 70 in FIG. 8 after it is inserted into the groove 54 of the semiconductor process equipment.

The main difference between this embodiment and the embodiment of FIG. 7 lies in that: the upper surface E11 of the metal conductor E1 and the lower surface E21 of the metal conductor E2 inside the connection layer 53 are protruding from the adhesive G and are exposed on the connection layer 53. The upper and lower sides, in addition, the seal ring 70 mainly includes a body 701, a first extension 71, a second extension 72, and a third extension 73, wherein a first protrusion is formed at the end of the first extension 71 A second protruding structure 721 is formed at the end of the second extending portion 72, and a receiving portion 702 is formed between the first and second extending portions 71 and 72 to receive the metal conductors E1 and E2.

For example, the cross-section of the aforementioned sealing ring 70 has a substantially C-shaped structure, and it may contain rubber or polytetrafluoroethene (PTFE). As can be seen from the figures 8 to 10, the aforementioned first extension portion 71 protrudes out of the body 701 toward the inner side of the seal ring 70, and the first protrusion structure 711 is from the end of the first extension portion 71 toward the seal ring. 70 protrudes in the inner direction, wherein the first extension portion 71 and the first protruding structure 711 are inserted into a slit formed between the base body 51 and the metal conductor E2 after assembly (FIG. 10).

Similarly, the aforementioned second extension portion 72 also protrudes from the body 701 toward the inside of the seal ring 70, and the second protruding structure 721 protrudes from the end of the second extension portion 72 toward the inside of the seal ring 70. The second extending portion 72 and the second protruding structure 721 are inserted into the slit formed between the carrying element 52 and the metal conductor E1 after assembly (FIG. 10).

It should be particularly noted that, since the thickness of the first protruding structure 711 in this embodiment is smaller than the thickness of the first extending portion 71 and the thickness of the second protruding structure 721 is smaller than the thickness of the second extending portion 72, so when assembling First, the first and second protruding structures 711 and 721 can be inserted into the slits (as shown in FIG. 9) to help guide the first and second extensions 71 and 72 to be smoothly inserted into the slits. Within (as shown in Figure 10).

In addition, two recessed regions 712 are formed between the first protruding structure 711 and the first extending portion 71, and the two recessed regions 712 are located on opposite sides of the first protruding structure 711 (such as the eighth and tenth). (Shown in the figure); and, a recessed area 721 is formed between the second protruding structure 721 and the second extension 72, and the recessed area 721 is adjacent to the metal conductor E1 inside the connection layer 53 (as shown in FIG. 10). It should be particularly noted that the aforementioned sealing ring 70 is formed with a flat top surface 703, the aforementioned top surface 703 abuts against the bearing element 52, and is connected to the body 701, the second extending portion 72, and the second protruding structure 721, and can be transmitted through The top surface 703 is closely adhered to the bearing element 52 to prevent the process fluid from entering the connection layer 53 through the gap generated between the sealing ring 70 and the bearing element 52.

In addition, the third extension portion 73 protrudes from the body 701 toward the bottom side of the seal ring 70. The third extension portion 73 is exposed on an outer surface of the seal ring 70 and forms a chamfered surface 731. The corner surface 731 is, for example, an inclined surface or a curved surface, and corresponds to the chamfered structure 511 on the edge of the base body 51. It can be seen from FIG. 10 that after the sealing ring 70 is embedded in the groove 54 of the semiconductor processing equipment, the chamfered surface 731 can be closely attached to the chamfered structure 511 located on the edge of the wafer body 51 to prevent the process fluid. The connection layer 53 is intruded through a gap generated between the seal ring 70 and the base body 51.

Next, please refer to FIGS. 11 to 13 together, wherein FIG. 11 shows a perspective view of a seal ring 70 according to another embodiment of the present invention, and FIGS. 12 and 13 show an enlarged partial sectional view of the seal ring 70 in FIG. 11. . The main difference between this embodiment and the embodiment of FIGS. 8 to 10 is that the length of the first protruding portion 711 in the radial direction of the seal ring 70 in this embodiment is greater than that of the second protruding portion 721 in the radial direction. On the length. Among them, by making the protruding lengths of the first and second protruding portions 711 and 721 different, or making the ends thereof at different positions in the radial direction of the seal ring 70, the seal ring 70 and the seat 50 can be elastically adjusted. The degree of fitting between them can take into account the dual advantages of easy disassembly and effective close fitting.

Please refer to FIGS. 14 to 15 together, where FIG. 14 shows an enlarged partial sectional view of a seal ring 70 according to another embodiment of the present invention, and FIG. 15 shows that the seal ring 70 in FIG. 14 is embedded in a semiconductor process An enlarged view of a partial section behind the device. The main difference between this embodiment and the embodiment of FIGS. 8 to 10 is that the upper surface E11 of the metal conductor E1 inside the connection layer 53 is not exposed on the upper side of the connection layer 53 because it is covered with the adhesive G. In addition, the seal ring 70 Only the first extending portion 71 and the first protruding structure 711 are formed, and the second extending portion 72 and the second protruding structure 721 shown in FIGS. 8 to 10 are not formed; An inner edge of the surface 731 is formed with a chamfered surface 704 adjacent to the load-bearing element 52.

As shown in FIGS. 14 to 15, since the seal ring 70 of this embodiment is formed with only the first extension portion 71 and the first protruding structure 711, the second extension portion 72 shown in FIGS. 8 to 10 is not formed. And the second protruding structure 721, so that the sealing ring 70 can be more easily disassembled and assembled. Among them, by forming a chamfered surface 704 on the inner edge of the top surface 731 of the sealing ring 70, the sealing ring can be more effectively prevented. The mechanical interference between the 70 and the bearing element 52 during assembly can greatly improve the assembly efficiency, while taking into account the dual advantages of convenient assembly and effective sealing.

In summary, by creating a replaceable sealing ring in the groove on the side of the semiconductor process equipment, this creation can effectively prevent the process fluid (such as plasma gas) from eroding into the connection layer through the groove, so as to avoid Micro-Arcing, leakage, abnormal voltage, or gas (such as helium) leaks. The seal ring can be made of rubber or Teflon, and is formed with at least one convex inward The extended portion is used to improve the bonding strength between the seal ring and the crystal seat, so that the seal ring can be prevented from falling off, and the sealing effect can be greatly improved and the maintenance cost can be reduced.

Although the embodiments and advantages of this creation have been disclosed as above, it should be understood that anyone with ordinary knowledge in the technical field can make changes, substitutions, and decorations without departing from the spirit and scope of this creation. In addition, the scope of protection of this creation is not limited to the process, machine, manufacture, material composition, device, method, and steps in the specific embodiments described in the description. Anyone with ordinary knowledge in the technical field can disclose the content from this creation. To understand the current or future development of processes, machines, manufacturing, material composition, devices, methods and steps, as long as they can implement almost the same functions or obtain substantially the same results in the embodiments described herein, they can be used according to this creation. Therefore, the scope of protection of this creation includes the above-mentioned processes, machines, manufacturing, material composition, devices, methods and steps. In addition, each patent application scope constitutes a separate embodiment, and the protection scope of this creation also includes the combination of each patent application scope and embodiment.

Although this creation has been disclosed above with a preferred embodiment, it is not intended to limit this creation. Anyone who is familiar with this craft can make some changes and decorations without departing from the spirit and scope of this creation. The scope of protection of this creation shall be determined by the scope of the attached patent application.

1‧‧‧ semiconductor process equipment
2‧‧‧ wafer
3‧‧‧ fluid
4‧‧‧ Adhesive
10‧‧‧ Crystal Block
11‧‧‧ crystal body
12‧‧‧ load bearing element
13‧‧‧fluid supply unit
14‧‧‧ Trench
15‧‧‧ Side of the crystal seat
20‧‧‧Extended cover element
30‧‧‧ Cavity
50‧‧‧ Crystal Block
51‧‧‧ crystal body
511‧‧‧ chamfer structure
52‧‧‧bearing element
53‧‧‧ Connection layer
54‧‧‧Groove
60‧‧‧Extended cover element
70 、 R‧‧‧seal ring
701‧‧‧ Ontology
702‧‧‧ accommodation
703‧‧‧Top
704‧‧‧ chamfered surface
71‧‧‧First extension
712, 722‧‧‧ sunken area
711‧‧‧The first protruding structure
72‧‧‧second extension
721‧‧‧Second protruding structure
73‧‧‧Third Extension
731‧‧‧ chamfered surface
E1, E2‧‧‧ metal conductor
C‧‧‧ Insulation
G‧‧‧Viscose
h‧‧‧ thickness
W‧‧‧ Wafer

FIG. 1 is a schematic diagram showing a conventional semiconductor process equipment 1 performing a semiconductor process on a wafer 2 in a cavity 30.
FIG. 2 shows an enlarged view of part A in the first figure.
FIG. 3 is a schematic view showing that the adhesive 14 is filled in the trench 14 in FIG. 2.
FIG. 4 is a schematic diagram showing that the adhesive 4 in FIG. 3 is etched by plasma particles and is lost.
FIG. 5 is a schematic diagram illustrating a semiconductor process performed on a wafer W by a semiconductor process apparatus according to an embodiment of the present invention.
FIG. 6 is an enlarged partial cross-sectional view of the semiconductor process equipment shown in FIG. 5.
FIG. 7 is an enlarged partial cross-sectional view of a semiconductor process equipment according to another embodiment of the present invention.
FIG. 8 shows an enlarged partial sectional view of a seal ring 70 according to another embodiment of the present invention before it is combined with a semiconductor process equipment.
FIG. 9 is an enlarged partial cross-sectional view of the sealing ring 70 in FIG. 8 when it enters the groove 54 of the semiconductor process equipment.
FIG. 10 is an enlarged partial cross-sectional view of the seal ring 70 in FIG. 8 after it is inserted into the groove 54 of the semiconductor process equipment.
FIG. 11 is a perspective view of a seal ring 70 according to another embodiment of the present invention.
Figures 12 and 13 show enlarged partial sectional views of the seal ring 70 in Figure 11.
FIG. 14 is an enlarged partial sectional view of a seal ring 70 according to another embodiment of the present invention.
FIG. 15 shows an enlarged partial cross-sectional view of the sealing ring 70 in FIG. 14 after it is embedded in a semiconductor process equipment.

Claims (10)

A sealing ring is provided in a semiconductor process equipment, wherein the semiconductor process equipment includes a connection layer and a wafer seat, the wafer seat includes a wafer body and a carrier element for carrying the wafer, the connection layer is provided A metal conductor is included between the base body and the supporting element, wherein the sealing ring includes:
A body; and a first extension portion protruding from the body toward an inside of the sealing ring, wherein the first extension portion is embedded between the crystal base body and the metal conductor to prevent a process fluid from eroding The connection layer. The sealing ring according to item 1 of the scope of patent application, wherein the sealing ring further includes a first protruding structure protruding from the first extending portion toward the inner side, and the thickness of the first protruding structure is smaller than the The thickness of the first extension. The sealing ring according to item 2 of the scope of patent application, wherein two recessed areas are formed between the first protruding structure and the first extending portion, and the recessed areas are located on opposite sides of the first protruding structure . The sealing ring according to item 2 of the scope of patent application, wherein the sealing ring further includes a second extension portion and a receiving portion, and the second extension portion protrudes from the body toward an inner side of the seal ring, and is inserted into the body. It is arranged between the crystal base body and the metal conductor to prevent the process fluid from attacking the connection layer, wherein the receiving portion is formed between the first and second extension portions to receive a part of the metal conductor. The sealing ring according to any one of claims 1 to 4, wherein the sealing ring further has a second protruding structure, which protrudes from the second extension toward the inner direction, and the second convex The thickness of the out structure is smaller than the thickness of the second extension portion. The sealing ring according to item 5 of the scope of patent application, wherein the sealing ring further includes a top surface, which abuts the bearing element and connects the body, the second extension portion, and the second protruding structure. The sealing ring according to item 5 of the application, wherein a recessed area is formed between the second protruding structure and the second extension, and the recessed area is adjacent to the metal conductor. The sealing ring according to item 5 of the scope of patent application, wherein a length of the first protruding portion in a radial direction of the sealing ring is greater than a length of the second protruding portion in the radial direction. The sealing ring according to any one of claims 1 to 4, wherein the sealing ring further includes a third extending portion protruding from the body toward a bottom side of the sealing ring, wherein the third The extension portion is exposed on an outer surface of the seal ring, and the third extension portion has a chamfered surface corresponding to a chamfered structure of the base body. The sealing ring according to item 9 of the scope of the patent application, wherein the chamfered surface is an inclined surface or a curved surface.