CN210978513U

CN210978513U - Sealing ring

Info

Publication number: CN210978513U
Application number: CN201921680581.2U
Authority: CN
Inventors: 张佑语; 黄俊尧
Original assignee: MFC Sealing Technology Co Ltd
Current assignee: MFC Sealing Technology Co Ltd
Priority date: 2019-08-26
Filing date: 2019-10-09
Publication date: 2020-07-10
Anticipated expiration: 2029-10-09
Also published as: TWM587360U

Abstract

A sealing ring is arranged in semiconductor process equipment and comprises a body and a first extension part, wherein the first extension part protrudes out of the body towards the inner side direction of the sealing ring. Particularly, the first extension part is embedded between the crystal seat body of the semiconductor processing equipment and the connecting layer so as to prevent the connecting layer from being corroded by the processing fluid.

Description

Sealing ring

Technical Field

The present invention relates to a sealing ring, and more particularly to a sealing ring used in semiconductor processing equipment.

Background

Referring first to fig. 1 and 2, fig. 1 is a schematic diagram illustrating a conventional semiconductor processing apparatus 1 performing a semiconductor process on a wafer 2 in a chamber 30, and fig. 2 is an enlarged view of a portion a of fig. 1.

As shown in fig. 1 and 2, the semiconductor processing apparatus 1 is, for example, a plasma etching apparatus, and mainly includes a susceptor 10 and an extension cover assembly 20. The susceptor 10 is disposed inside the chamber 30 and includes a susceptor body 11, a fluid supply unit 13 and a carrier assembly 12, wherein the carrier assembly 12 is disposed on the susceptor body 11, the wafer 2 is disposed on the carrier assembly 12, the fluid supply unit 13 is disposed inside the susceptor body 11 and can supply the fluid 3 to the wafer 2 through the carrier assembly 12; wherein, the trench 14 is formed on the susceptor side surface 15 of the susceptor 10 and located at the connection position of the susceptor body 11 and the carrier assembly 12.

Referring to fig. 2, in the prior art, since a small gap exists at the connection between the susceptor body 11 and the carrier assembly 12, the fluid 3 tends to leak through the gap at the groove 14.

Fig. 3 shows a schematic view of filling the grooves 14 with the adhesive 4 in fig. 2, and fig. 4 shows a schematic view of the adhesive 4 in fig. 3 being etched away by the plasma particles. As shown in fig. 3, in order to prevent the fluid 3 from leaking, the groove 14 may be filled with the adhesive 4, but since the adhesive 4 is etched by plasma particles during a semiconductor process and is consumed (fig. 4), the sealing effect is lost after a long time use. In addition, the damaged viscose 4 is difficult to remove and cannot be reused, so that the viscose is not beneficial to periodic reinforcement or replacement, and the qualification rate of the whole process is seriously influenced.

SUMMERY OF THE UTILITY MODEL

In view of the foregoing problems, an embodiment of the present invention provides a sealing ring disposed in a semiconductor processing apparatus, wherein the semiconductor processing apparatus includes a connection layer and a susceptor, the susceptor includes a susceptor body and a bearing assembly for bearing the wafer, the connection layer is disposed between the susceptor body and the bearing assembly and includes a metal conductor, and the sealing ring includes a body and a first extension portion. Particularly, the first extending portion protrudes from the body toward the inner side of the seal ring, wherein the first extending portion is embedded between the susceptor body and the metal conductor to prevent the process fluid from corroding the electrode and other components in the connection layer.

In an embodiment, the seal ring further includes a first protrusion structure protruding from the first extension portion toward the inner side, and a thickness of the first protrusion structure is smaller than a thickness of the first extension portion.

In one embodiment, two recessed regions are formed between the first protruding structure and the first extending portion, and the recessed regions are located on opposite sides of the first protruding structure.

In one embodiment, the seal ring further includes a second extending portion protruding from the body toward an inner side of the seal ring and embedded between the susceptor body and the metal conductor to prevent the process fluid from corroding the connection layer, and a groove formed between the first and second extending portions to accommodate the metal conductor.

In an embodiment, the seal ring further has a second protrusion structure protruding from the second extending portion toward the inner side, and a thickness of the second protrusion structure is smaller than a thickness of the second extending portion.

In an embodiment, the seal ring further includes a top surface abutting the carrier assembly and connecting the body, the second extending portion and the second protruding structure.

In an embodiment, a length of the first protrusion in the radial direction of the seal ring is greater than or equal to a length of the second protrusion in the radial direction.

In one embodiment, a recessed region is formed between the second protrusion structure and the second extension portion, and the recessed region is adjacent to the metal conductor.

In an embodiment, the seal ring further includes a third extending portion protruding from the body toward a bottom side of the seal ring, wherein the third extending portion is exposed on an outer surface of the seal ring, and the third extending portion has a chamfered surface corresponding to the chamfered structure of the susceptor body.

In an embodiment, the chamfer surface is an inclined surface or a curved surface.

Drawings

Fig. 1 is a schematic diagram of a conventional semiconductor processing apparatus 1 for performing a semiconductor process on a wafer 2 in a chamber 30.

Fig. 2 shows an enlarged view of a portion a in fig. 1.

Fig. 3 shows a schematic view of the groove 14 in fig. 2 filled with the glue 4.

Fig. 4 shows a schematic diagram of the loss of the glue 4 in fig. 3 due to etching by the plasma particles.

Fig. 5 is a schematic diagram of a semiconductor process performed on a wafer W by semiconductor processing equipment according to an embodiment of the present invention.

Fig. 6 shows an enlarged partial cross-sectional view of the semiconductor processing apparatus shown in fig. 5.

Fig. 7 is an enlarged partial cross-sectional view of semiconductor processing equipment according to another embodiment of the present invention.

Fig. 8 shows an enlarged view of a portion of a seal ring 70 according to another embodiment of the present invention in cross-section prior to being integrated with semiconductor processing equipment.

Fig. 9 shows an enlarged partial cross-sectional view of the seal ring 70 of fig. 8 as it enters the trench 54 of the semiconductor processing apparatus.

Fig. 10 shows an enlarged partial cross-sectional view of the seal ring 70 of fig. 8 after it has been embedded in the trench 54 of a semiconductor processing apparatus.

Fig. 11 is a perspective view of a seal ring 70 according to another embodiment of the present invention.

Fig. 12 and 13 are enlarged partial sectional views of the seal ring 70 in fig. 11.

Fig. 14 shows an enlarged partial cross-sectional view of a seal ring 70 according to another embodiment of the present invention.

Fig. 15 shows an enlarged partial cross-sectional view of the seal ring 70 of fig. 14 after it has been embedded in semiconductor processing equipment.

Detailed Description

The seal ring according to the embodiment of the present invention is explained below. It should be appreciated, however, that the embodiments of the invention provide many applicable inventive concepts that can be embodied in a wide variety of specific contexts. The specific embodiments disclosed are merely illustrative of specific ways to make and use the invention, and do not limit the scope of the invention.

Unless defined otherwise, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It will be understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and the present disclosure and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

The foregoing and other features, aspects and utilities of the present invention will be apparent from the following more particular description of preferred embodiments of the invention when read in conjunction with the accompanying drawings. Directional terms as referred to in the following examples, for example: up, down, left, right, front or rear, etc., are directions with reference to the attached drawings only. Therefore, the directional terms used in the embodiments are used for description and are not intended to limit the present invention.

Referring to fig. 5 and 6 together, fig. 5 is a schematic diagram illustrating a semiconductor process performed on a wafer W by a semiconductor processing apparatus according to an embodiment of the present invention, and fig. 6 is an enlarged partial sectional view of the semiconductor processing apparatus shown in fig. 5. As shown in fig. 5 and 6, the semiconductor apparatus in the present embodiment is, for example, a plasma etching apparatus, and mainly includes a susceptor 50 and an extension cover assembly 60 surrounding the susceptor 50, wherein the extension cover assembly 60 may include a focus ring (focus ring) made of ceramic, silicon carbide or quartz to facilitate the plasma etching process.

It should be noted that the susceptor 50 mainly includes a susceptor body 51, a carrier 52 and a connection layer 53, wherein the connection layer 53 is disposed between the susceptor body 51 and the carrier 52, and the wafer W is disposed on the carrier 52; in addition, an annular groove 54 is formed between the susceptor body 51, the carrier assembly 52 and the connection layer 53, and a replaceable seal ring R is filled in the groove 54 to prevent the process fluid (e.g., plasma gas) from eroding to the inner side of the groove 54 to the components such as the electrode in the connection layer 53, thereby preventing Micro-arc discharge (Micro-arc), leakage current, voltage abnormality or gas (e.g., helium gas) leakage.

As shown in fig. 6, the connection layer 53 of the present embodiment is provided with two metal conductors E1, E2 (e.g., aluminum electrodes) inside, and the two metal conductors E1, E2 are filled with adhesive G for adhering the susceptor body 51 and the carrier assembly 52; in one embodiment, the adhesive G is, for example, a thermal glue (thermal glue). In addition, an insulating layer C, which may comprise, for example, alumina, is coated on the surface of the susceptor body 51, and connects the connection layer 53 and the sealing ring R to ensure that the electrode inside the connection layer 53 does not short-circuit with the conductor inside the susceptor body 51.

Specifically, a chamfer structure 511 is formed on the edge of the susceptor body 51, and the groove 54 has a trapezoidal cross section, wherein the sealing ring R is embedded in the groove 54 and tightly contacts with the chamfer structure 511. However, since the chamfer structure 511 is gradually expanded toward the outer side of the groove 54, the sealing ring R may lose its elasticity after being used for a long time or eroded and may be loosened along the chamfer structure 511 to reduce its sealing effect.

Referring next to fig. 7, fig. 7 is an enlarged partial sectional view of semiconductor processing equipment according to another embodiment of the present invention. The main difference between this embodiment and the embodiment of fig. 6 is: the metal conductors E1, E2 in the connecting layer 53 penetrate the adhesive G and are exposed to one side of the connecting layer 53, and the sealing ring R has a main body R1 and an extension R2, wherein the extension R2 protrudes from the main body R1 toward the inner side of the sealing ring R and contacts with the metal conductors E1, E2, and the thickness h of the extension R2 in the vertical direction is smaller than the thickness h of the main body R1 in the vertical direction.

It should be noted that, in the embodiment, by appropriately reducing the size of the adhesive G in the horizontal direction, the sealing ring R can further extend towards the inner side and be clamped between the susceptor body 51 and the carrying element 52, so as to enhance the bonding strength between the sealing ring R and the susceptor 50, and thus the sealing ring R can be prevented from falling off from the side of the susceptor 50 to greatly enhance the sealing effect.

Referring to fig. 8 to 10 together, fig. 8 is a partial cross-sectional enlarged view of a sealing ring 70 according to another embodiment of the present invention before being combined with a semiconductor processing apparatus, fig. 9 is a partial cross-sectional enlarged view of the sealing ring 70 in fig. 8 entering a trench 54 of the semiconductor processing apparatus, and fig. 10 is a partial cross-sectional enlarged view of the sealing ring 70 in fig. 8 after being embedded in the trench 54 of the semiconductor processing apparatus.

The main difference between this embodiment and the embodiment of fig. 7 is: the upper surface E11 of the metal conductor E1 and the lower surface E21 of the metal conductor E2 inside the connection layer 53 protrude from the adhesive G and are exposed at the upper and lower sides of the connection layer 53, and the seal ring 70 mainly includes a body 701, a first extension portion 71, a second extension portion 72, and a third extension portion 73, wherein a first protruding structure 711 is formed at the end of the first extension portion 71, a second protruding structure 721 is formed at the end of the second extension portion 72, and a receiving portion 702 is formed between the first and

second extension portions

71, 72 for receiving the aforementioned metal conductors E1, E2.

For example, the seal ring 70 has a substantially C-shaped cross-section, and may comprise a rubber or Polytetrafluoroethylene (PTFE) material. As can be seen from fig. 8 to 10, the first extending portion 71 protrudes from the body 701 toward the inner side of the seal ring 70, and the first protruding structure 711 protrudes from the end of the first extending portion 71 toward the inner side of the seal ring 70, wherein the first extending portion 71 and the first protruding structure 711 are embedded into the slit formed between the die pad body 51 and the metal conductor E2 after assembly (fig. 10).

Similarly, the second extending portion 72 protrudes from the body 701 toward the inner side of the sealing ring 70, and the second protruding structure 721 protrudes from the end of the second extending portion 72 toward the inner side of the sealing ring 70, wherein the second extending portion 72 and the second protruding structure 721 are embedded into the slit formed between the carrier assembly 52 and the metal conductor E1 after being assembled (fig. 10).

It should be noted that, since the thickness of the first protruding structure 711 is smaller than the thickness of the first extending portion 71 and the thickness of the second protruding structure 721 is smaller than the thickness of the second extending portion 72 in the present embodiment, the first and

second protruding structures

711 and 721 can be inserted into the slit (as shown in fig. 9) during assembly to help guide the first and second extending

portions

71 and 72 to be smoothly inserted into the slit (as shown in fig. 10).

Furthermore, two recessed regions 712 are formed between the first protruding structure 711 and the first extending portion 71, and the two recessed regions 712 are located on opposite sides of the first protruding structure 711 (as shown in fig. 8 and 10); also, a recessed region 722 is formed between the second protruding structure 721 and the second extension 72, and the recessed region 722 abuts against the metal conductor E1 inside the connection layer 53 (as shown in fig. 10). It should be noted that, the sealing ring 70 is formed with a flat top surface 703, the top surface 703 abuts against the carrier 52, and the connecting body 701, the second extending portion 72 and the second protruding structure 721 are assembled, so that the top surface 703 and the carrier 52 are tightly sealed to prevent the process fluid from entering the connecting layer 53 through the gap between the sealing ring 70 and the carrier 52.

Furthermore, the third extending portion 73 protrudes from the body 701 toward the bottom side of the sealing ring 70, wherein the third extending portion 73 is exposed on the outer side surface of the sealing ring 70 and forms a chamfered surface 731, wherein the chamfered surface 731 is, for example, an inclined surface or a curved surface, corresponding to the chamfered structure 511 on the edge of the susceptor body 51. As can be seen from fig. 10, after the sealing ring 70 is inserted into the trench 54 of the semiconductor processing apparatus, the chamfered surface 731 may be tightly attached to the chamfered structure 511 at the edge of the susceptor body 51 to prevent the process fluid from invading into the connection layer 53 through the gap generated between the sealing ring 70 and the susceptor body 51.

Next, referring to fig. 11 to 13, wherein fig. 11 is a perspective view of a seal ring 70 according to another embodiment of the present invention, and fig. 12 and 13 are enlarged partial sectional views of the seal ring 70 shown in fig. 11. The main differences between this embodiment and the embodiments of fig. 8 to 10 are: the length of the first projecting structure 711 in the radial direction of the seal ring 70 in this embodiment is larger than the length of the second projecting structure 721 in the radial direction. By making the protruding lengths of the first and second protruding

structures

711 and 721 different or making the ends thereof located at different positions in the radial direction of the sealing ring 70, the degree of engagement between the sealing ring 70 and the susceptor 50 can be elastically adjusted, thereby achieving the dual advantages of easy assembly and disassembly and effective sealing.

Referring to fig. 14 to 15, fig. 14 is an enlarged partial sectional view of a seal ring 70 according to another embodiment of the present invention, and fig. 15 is an enlarged partial sectional view of the seal ring 70 of fig. 14 after being embedded in semiconductor processing equipment. The main differences between this embodiment and the embodiments of fig. 8 to 10 are: the upper surface E11 of the metal conductor E1 in the connection layer 53 is not exposed on the upper side of the connection layer 53 because it is covered by the adhesive G, and the seal ring 70 is formed with only the first extension portion 71 and the first protrusion structure 711, but not the second extension portion 72 and the second protrusion structure 721 shown in fig. 8-10; also, a chamfered surface 704 is formed on the inner edge of the top surface 731 of the seal ring 70 to abut the carrier assembly 52.

As shown in fig. 14 to 15, since the sealing ring 70 of the present embodiment is formed with only the first extending portion 71 and the first protruding structure 711, and is not formed with the second extending portion 72 and the second protruding structure 721 shown in fig. 8 to 10, it is easier to assemble and disassemble the sealing ring 70, wherein the chamfer 704 is formed on the inner edge of the top surface 731 of the sealing ring 70, so as to effectively prevent the mechanical interference between the sealing ring 70 and the carrier assembly 52 during assembly, thereby greatly improving the assembly efficiency and simultaneously achieving the dual advantages of assembly convenience and effective sealing.

To sum up, the utility model discloses borrow by setting up removable sealing ring in the slot of semiconductor process equipment side, can prevent effectively that process fluid (for example plasma gas) from corroding the articulamentum to the inboard via the slot, thereby can avoid situations such as Micro-arc discharge (Micro-arc), electric leakage, voltage anomaly or gas (for example helium) leakage to produce, wherein aforementioned sealing ring can adopt rubber or indisputable fluorine dragon (Teflon) material, and be formed with at least one towards the convex extension of inboard direction, in order to promote the bonding strength between sealing ring and the crystal base, thereby can prevent that the sealing ring from droing, can promote its sealed effect and reduce cost of maintenance simultaneously by a wide margin.

Although the embodiments of the present invention and their advantages have been disclosed, it should be understood that various changes, substitutions and alterations can be made herein by those skilled in the art without departing from the spirit and scope of the invention. Moreover, the scope of the present application is not intended to be limited to the particular embodiments of the process, machine, manufacture, composition of matter, means, methods and steps described in the specification, but rather, the process, machine, manufacture, composition of matter, means, methods and steps described in connection with the embodiment disclosed herein will be understood to one skilled in the art from the disclosure to be included within the scope of the present application as presently claimed in the art to which the present invention relates. Accordingly, the scope of the present disclosure includes the processes, machines, manufacture, compositions of matter, means, methods, and steps described above. In addition, each claim constitutes a separate embodiment, and the scope of protection of the present invention also includes combinations of the respective claims and embodiments.

Although the present invention has been described with reference to preferred embodiments, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims.

[ notation ] to show

Crystal seat 50

Crystal base body 51

Load bearing assembly 52

Connecting layer 53

Groove 54

Extension cover assembly 60

Sealing ring R

A wafer W.

Claims

1. A seal ring disposed in a semiconductor processing apparatus, wherein the semiconductor processing apparatus comprises a connection layer and a susceptor, the susceptor comprises a susceptor body and a carrier assembly for carrying a wafer, the connection layer is disposed between the susceptor body and the carrier assembly and comprises a metal conductor, wherein the seal ring comprises:

a body; and

the first extending part protrudes out of the body towards the inner side direction of the sealing ring, wherein the first extending part is embedded between the crystal seat body and the metal conductor to prevent the process fluid from corroding the connecting layer.

2. The seal ring of claim 1, wherein the seal ring further comprises a first protrusion protruding from the first extension in the inner direction, and a thickness of the first protrusion is less than a thickness of the first extension.

3. The seal ring of claim 2, wherein two recessed regions are formed between the first projecting structure and the first extension, the recessed regions being located on opposite sides of the first projecting structure.

4. The seal ring of claim 2, further comprising a second extension portion protruding from the body toward an inner side of the seal ring and embedded between the susceptor body and the metal conductor to prevent the process fluid from corroding the connection layer, and a receiving portion formed between the first and second extension portions to receive a portion of the metal conductor.

5. The seal ring of any one of claims 1 to 4, wherein the seal ring further has a second protrusion structure protruding from the second extension portion toward the inner side, and a thickness of the second protrusion structure is smaller than a thickness of the second extension portion.

6. The seal ring of claim 5, wherein the seal ring further comprises a top surface abutting the carrier assembly and connecting the body, the second extension, and the second projection structure.

7. The seal ring of claim 5, wherein a recessed region is formed between the second protruding structure and the second extension, and the recessed region is adjacent to the metal conductor.

8. The seal ring of claim 5, wherein a length of the first tab in a radial direction of the seal ring is greater than a length of the second tab in the radial direction.

9. The seal ring of any one of claims 1 to 4, wherein the seal ring further comprises a third extension protruding from the body toward the bottom side of the seal ring, wherein the third extension is exposed at an outer side surface of the seal ring, and the third extension has a chamfered surface corresponding to the chamfered structure of the susceptor body.

10. The seal ring of claim 9, wherein the chamfered surface is a chamfer or a curved surface.