KR100215169B1 - Composite silicon electrode for plasma etching device - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a composite silicon electrode plate for a plasma (P1asma) etching apparatus used for etching a wafer when manufacturing a semiconductor integrated circuit. In the related art, when a support ring and an electrode ejection plate are thermally fused with lead solution, The lead solution leaking inward from the adhesive surface blocks the injection holes of the electrode ejection plate, so that a large amount of particles are generated at a predetermined value or more during plasma etching, and abnormal discharge phenomenon occurs between the support ring and the wafer. Due to severe contamination, the integrated circuit performance of the etched wafer is greatly degraded, resulting in a weak quality competitiveness.

Accordingly, the present invention is formed by supporting the leakage preventing scratches (40) to the inside of the lead bleeding (30) formed as a lead receiving groove in the center of the contact portion 12 of the support ring 10, the flange 11 is formed in the sunshade shape When the lead solution leaking inwards during the heat fusion of the ring 10 and the electrode injection plate 20 flows into the leakage preventing groove 40, the injection hole 21 of the electrode injection plate 20 is prevented from being blocked by the lead solution. As a result, when the wafer is etched, the particle generation rate can be reduced to less than the specified value, thereby providing a high quality and low cost wafer.

Description

Composite Silicon Electrode Plate for Plasma Etching Equipment

Figure 1 is a main portion transverse cross-sectional view illustrating the installation and use of the present invention

Fig. 2 (a) (b) is a sectional side view of the main portion illustrating the state before and after the heat-welding of the support ring and the electrode injection plate of the present invention;

Explanation of symbols for main parts of the drawings

10: support ring 12: contact portion

20: electrode injection plate 30: lead liquid defect

21: injection hole 40: leak prevention flaw

Detailed description of the invention

[Purpose of invention]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a composite silicon electrode plate for a plasma (P1asnn) etching apparatus used to etch a wafer when fabricating a semiconductor integrated circuit. In particular, the support ring and the electrode ejection plate forming the composite silicon electrode plate are mutually different. When bonding, lead, which is an adhesive, blocks the injection hole of the electrode injection plate beyond the adhesive surface of the support ring and the electrode injection plate, so that the particles (Partic1e) can be prevented from being generated when the etching gas is injected into the injection hole. The present invention relates to a composite silicon electrode plate for a plasma etching apparatus which can maintain a wafer at a lower cost.

[Technical field to which the invention belongs and the prior art in that field]

In general, integrated circuits of semiconductors are used to etch and manufacture the surface of a wafer. As a device for etching a wafer, a plasma etching device using a food gas is used. At the lower end, the worktable where the wafer is mounted is installed, the composite silicon electrode plate is formed by the support ring with the flange and the electrode injection plate, and the composite silicon electrode plate is installed on the wafer top of the workbench.

When the plasma etching apparatus injects the etching gas while applying the RF power to the composite silicon electrode plate while maintaining the inside of the vacuum chamber in a vacuum state, the etching gas is injected into the injection hole of the electrode ejection plate, and between the wafers of the working table. Plasma is formed in the ionized state, and the plasma is thus etched on the surface of the wafer as it hits the surface of the wafer.

In other words, the etching in the plasma state means that when the chromium discharge is performed in the gas mixture near the integrated circuit wafer, the atomic nuclei and ions are generated and the material is etched on the wafer surface. Although the impact is caused by the impact, the strength of the ion shock varies depending on the development pressure and the structure of the electrode and various other factors. It is possible.

The conventional composite silicon electrode plate formed by attaching the support ring and the electrode ejection plate with lead as described above mainly forms the electrode ejection plate with single crystal silicon and the support ring on which the flange is formed is carbon. In the composite silicon electrode plate, abnormal discharge phenomenon occurs between the carbon support ring and the wafer having high conductivity due to the particles generated above the specified value when performing plasma etching by discharging.

That is, in general, when the gas is injected into the electrode ejection plate to plasma-etch the wafer surface, the gas injected to the electrode ejection plate mainly uses fluorine gas. Particles to be produced must be generated in a size of 0.2 μm or less and 20 or less in order to provide high quality wafers.

However, when the plasma etching is performed as described above, the carbon support ring is chipped and carbon particles are generated. Also, when the support ring forming the composite silicon electrode plate and the electrode injection plate are bonded with lead, Particle1e is generated even when the etching gas is injected into the injection hole by blocking the injection hole at the edge of the electrode injection plate beyond the adhesive surface of the support ring and the electrode injection plate. Will occur.

As described above, when a large amount of particles generated above a specified value falls on the wafer surface during plasma etching, abnormal discharge phenomenon occurs between the support ring and the wafer, and the surface of the wafer is severely contaminated with the remaining particles. The performance of the integrated circuit of the wafer is greatly reduced, resulting in a weakening of the quality competitiveness.

Therefore, in order to reduce the generation of particles, the support ring is often formed of a silicon material, which is considerably more expensive than carbon. The silicon support ring has a low wear resistance compared to the carbon support ring, and thus has a short lifespan. Due to the large cost burden, there is a problem that price competitiveness falls.

In other words, since silicon is currently being unable to supply demand both at home and abroad, it is very difficult to obtain the quantity and the price is high, and also the surface roughness after processing has occurred more defective rate by chipping than carbon in the processing surface. Better than carbon, the support ring or electrode ejection plate made of silicon has a short lifespan, but in the case of a large diameter of 12 or more, there is a problem in that it is difficult to obtain the replacement work because it is difficult to obtain.

Also, in the generation of particles, the number of particles generated by the lead solution blocking the injection hole of the electrode ejection plate occupies a greater proportion than the particles generated by the surface of the support ring being scraped, so that both the support ring and the electrode ejection plate Even if it is made of silicon, there is a limit to improve the wafer quality.

[Technical problem to be achieved]

Accordingly, in the present invention, when the support ring and the electrode injection plate constituting the composite silicon electrode plate are bonded to each other, the lead solution, which is an adhesive, does not deviate from the adhesive surface of the support ring and the electrode injection plate, so that the injection hole of the electrode injection plate is not blocked by the lead solution. The purpose of the present invention is to provide a composite silicon electrode plate for plasma etching apparatus which can reduce wafer incidence to minimize wafer incidence while maintaining wafer production cost at low cost.

[Configuration and Function of Invention]

In the above object of the present invention, in the form of a composite silicon electrode plate by heat-sealing a flanged support ring in a sunshade shape and an electrode spray plate having a plurality of injection holes with lead, the lead silicon is contained in the center of the contact portion of the support ring. It is achieved by forming a leak-proof flaw inside the lead liquid flaw to be formed by forming a composite silicon electrode plate for the plasma etching apparatus.

In the present invention, the lead is placed in the lead flap of the contact and the face part while the support ring is placed so that the contact part faces upwards, and the electrode injection plate is folded to overflow the leaded groove. It spreads to the inside and the outside along the gap, in which the present invention is formed with a leak-proof flap inside the lead flaw, so that the lead liquids flowing toward the inside of the electrode ejection plate flows into the leak-proof flaw along the contact part gap. There is no fear that the injection holes of the electrode ejection plate located at the lead is blocked, and accordingly, it is possible to prevent the generation of particles during plasma etching as in the prior art, thereby effectively achieving the above object.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT Hereinafter, the technical configuration and operation capable of effectively achieving the object of the present invention will be described in detail by the accompanying drawings as preferred embodiments.

Example 1

After forming the support ring 10 in which the flange 11 is formed in the sunshade form of carbon material and the electrode injection plate 20 in which the plurality of injection holes 21 are formed in the unitary silicon material is heated with lead solution. While fusion is formed to form a leak-proof groove (40) into the inside of the solder liquid (30) formed in the center of the contact portion 12 of the support ring (10). In the figure, reference numeral 50 denotes a wafer, 51 denotes a working table on which the wafer 50 is rolled up, and 60 denotes a vacuum vessel.

In the case of forming in this way, as shown in FIG. 2 (a), when the lead solution is put into the lead solution groove 30 of the support ring 10 and the contact portion 12, the electrode injection plate 20 is contacted and pressed. ), The better lead solution spreads inward and outward along the gap between the electrode ejection plate 20 and the support ring 10. In this case, the present invention provides a leak-proof groove 40 formed inside the lead defect 30. Therefore, the lead liquids that were directed toward the inside of the electrode injection plate 20 flow in the leak-proof flaw 40 as shown in FIG.

Therefore, when the lead liquids leaking inward along the contact portion 12 of the support ring 10 and the electrode injection plate 20 are effectively blocked by the leakage preventing defect 40 as described above, the electrode located inside the contact portion 12. There is no fear that the injection holes 21 of the injection plate 20 are clogged with lead solution, thereby preventing particles from being generated due to the lead solution blocking the injection holes 2l during plasma etching. Even if it is made of cheap carbon material, it is possible to provide high quality wafers with a party's incidence below the prescribed value and significantly reduce the production cost of the wafers, thereby increasing the price competitiveness.

Example 2

The support ring 10 in which the flange 11 is formed in the sunshade shape is formed of a single crystal or polycrystalline silicon material, and the electrode injection plate 20 in which the plurality of injection holes 21 are formed is formed of a single crystal silicon material. The lead liquid into the support ring 10 of the single crystal or polycrystalline material (10) is put into the lead solder lead (30), and the electrode injection plate 20 is folded in contact with the lead bleeding lead solder leak (30) when leaking along the contact portion (12) Since the total amount of the leaked leakage into the leak-proof defect 40, the injection holes 21 of the electrode ejection plate 20 is not at all feared to be blocked by the lead liquid leaked inward along the contact portion 12.

In the present invention according to the second embodiment as described above, the processing cost due to the material of the support ring 10 (single or polycrystalline silicon material) is more expensive than the carbon support ring of Example 1 and the lifespan is shorter. Compared with the prior art, the production cost of the wafer is higher than that of the conventional wafer, which is not much improved in terms of price competitiveness.

However, it is possible to effectively prevent the generation of a large amount of particles due to the lead solution blocking the injection hole 21 during the plasma etching as in the prior art, and the support ring 10 is made of a single crystal or polycrystalline silicon material in the support ring 10 It is possible to provide a high quality wafer compared to the first embodiment because it is possible to prevent the occurrence of the party can be said to be preferable in terms of quality competitiveness.

[Effects of the Invention]

As described above, in the present invention, when the support ring and the electrode ejection plate are thermally fused with lead solution, the lead solution leaking into the ground plane of the support ring and the electrode ejection plate when the composite silicon electrode plate is formed is leak-proof. Since the injection hole of the electrode ejection plate is effectively blocked by the lead solution, there is no fear of clogging the lead solution, and it is a very useful invention that can provide a high quality and low cost wafer because the incidence of particles can be reduced as much as possible by etching the wafer.

Claims (3)

Support ring (10) with flange 11 in the shape of sunshade and electrode injection plate 20 through which a plurality of injection holes 21 are thermally fused with lead to form a composite silicon electrode plate. At the time of thermal fusion of the support ring 10 and the electrode ejection plate 20 by forming a leak-proof flaw 40 inside the lead flaw 30 formed in the center of the contact portion 12 of the lead part 10 for accommodating the lead liquid. Composite silicon electrode plate for plasma etching apparatus, characterized in that the injection hole 21 of the electrode injection plate 20 is prevented from clogging the lead liquid. The method of claim 1, wherein the lead ring (30) and the leak-proof seal (40) is provided with a support material (10) made of a carbon material and the electrode injection plate 20 is formed of a unitary silicon material and heat-sealed The composite silicon electrode plate for plasma etching apparatus, characterized in that the injection hole 21 of the electrode injection plate 20 is not blocked by the lead solution. According to claim 1, wherein the lead ring 30 and the support ring 10 is provided with a leak-proof groove 40 is formed of a single crystal or polycrystalline silicon material and the electrode injection plate 20 is made of a unitary silicon The composite silicon electrode plate for plasma etching apparatus, characterized in that the injection hole 21 of the electrode injection plate 20 is formed so as not to be blocked by the lead solution during thermal fusion.