TWM537258U - Conductive structure and touch panel using the same - Google Patents

Abstract

A conductive structure includes a conductive oxide layer and a dielectric oxide layer. The dielectric oxide layer is disposed on the conductive oxide layer. The combination of the conductive and dielectric oxide layers has sheet resistance R that satisfies 105 ohms per square ≤ R ≤ 135 ohms per square.

Description

Conductive structure and touch panel using the same

The present invention relates to a conductive structure, in particular to a high resistivity conductive structure and its use.

A typical touch panel includes a cover, a touch sensing layer, and a wire. The touch sensing layer is disposed in the visible area of the cover. The wire is disposed in the non-visible area of the cover and electrically connected to the touch sensing layer. Generally, the touch sensing layer includes a plurality of first electrode strings and a plurality of second electrode strings. The first electrode string is spaced apart from the second electrode string and insulated, and the ends of the two electrode strings are connected to the wires to facilitate the transmission of the sensed touch signals to the signal processing unit.

In some forms of wiring, the wires connecting the first electrode strings are distributed in parallel with the wires connecting the second electrode strings on the non-visible area of the cover plate. Such a wiring manner easily causes coupling between the two types of wires. The capacitance, which in turn increases the capacitance at the intersection of the first electrode string and the second electrode string, causes the capacitance at the intersection to be saturated before being touched, thereby affecting the touch sensing function at the intersection.

Therefore, part of the touch panel may further include a metal ground structure, and the metal ground structure is disposed on the wire connecting the first electrode string and the connection Between the wires of the two electrode strings to reduce the coupling capacitance between the two wires, thereby reducing the capacitance at the intersection of the first electrode string and the second electrode string.

However, since the resistance of the metal ground structure is too low, when the distance between the metal structure and the wire is too close, it is easy to short-circuit with the wire.

The conductive structure disclosed in the embodiments of the present invention can reduce the coupling capacitance between the wires and prevent short circuit with the wires.

According to an embodiment of the present invention, a conductive structure includes a conductive oxide layer and a dielectric oxide layer. The dielectric oxide layer is disposed on the conductive oxide layer. The overall square resistance R of the conductive oxide layer and the dielectric oxide layer satisfies 105 ohms/square ≦ R ≦ 135 ohms/square.

According to another embodiment of the present invention, a touch panel includes a transparent cover, a plurality of electrode strings, a plurality of wires, and at least one of the foregoing conductive structures. The electrode strings are disposed on the transparent cover and insulated from each other. The wires are electrically connected to the electrode strings. The foregoing conductive structure is insulated from the electrode string and the wire, and a portion of the conductive structure is located between the wires, or between one of the electrode strings and one of the wires.

In the above embodiment, since the overall square resistance R formed by the conductive oxide layer and the dielectric oxide layer satisfies 105 ohms/square ≦R ≦135 ohms/square, the overall resistivity of the conductive structure can be improved. Since the high-resistivity conductive structure is located between the wires or between the wires and the electrode strings, the coupling capacitance between the wires or between the wires and the electrode strings can be reduced not only by their conductive properties, but also by their high Resistivity properties to prevent short circuits.

According to another embodiment of the present invention, a touch panel includes a transparent cover, a touch sensing layer, an inner ground structure, and an outer ground structure. The touch sensing layer is disposed on the transparent cover. The inner grounding structure is disposed on the transparent cover and surrounds the touch sensing layer and is insulated from the touch sensing layer. The square resistance R of the internal ground structure satisfies 105 ohms/square ≦ R ≦ 135 ohms/square. The outer ground structure surrounds the inner ground structure. The internal ground structure has a higher resistivity than the outer ground structure.

In the above embodiment, since the inner ground structure is a high-resistivity conductive structure compared to the outer ground structure, the inner ground structure has a high resistance under the same length and cross-sectional area, so that the electrostatic discharge can be facilitated (ElectroStatic) Discharge; ESD) Exports the touch panel from the external ground structure to prevent the electrostatic discharge from affecting the wire and the touch sensing layer.

The above description is only for explaining the problems to be solved by the present invention, the technical means for solving the problems, the effects thereof, and the like, and the specific details of the present invention will be described in detail in the following embodiments and related drawings.

100‧‧‧Transparent cover

110‧‧‧ inner surface

112‧‧‧ opaque area

114‧‧‧Lighting area

120‧‧‧ outer surface

200‧‧‧ touch sensing layer

210‧‧‧First electrode string

212‧‧‧First electrode

214‧‧‧First connection

220‧‧‧Second electrode string

222‧‧‧second electrode

224‧‧‧Second connection

230‧‧‧Insulation block

300‧‧‧First wire

400‧‧‧second wire

500, 500a‧‧‧ conductive structure

510‧‧‧conductive oxide layer

520‧‧‧Dielectric oxide layer

530‧‧‧Contact interface

600‧‧‧Insulation structure

700‧‧‧ Grounding terminal

800‧‧‧ external grounding structure

A‧‧‧ Intersection

D1, D2‧‧‧ length direction

G1, G2‧‧‧ gap

The above and other objects, features, advantages and embodiments of the present invention will be more clearly understood. The description of the drawings is as follows: FIG. 1 is a top view of a touch panel according to an embodiment of the present invention; 2 is a cross-sectional view of the touch panel of FIG. 1 along line 2-2; and FIG. 3 is a view showing an X-ray diffraction pattern of an indium tin oxide layer formed under different oxygen fluxes; 4 is a top view of a touch panel according to another embodiment of the present invention; FIG. 5 is a top view of a touch panel according to another embodiment of the present invention; and FIG. 6 is a view of another A top view of the touch panel of the embodiment; and FIG. 7 is a top view of the touch panel according to another embodiment of the present invention.

The plural embodiments of the present invention are disclosed in the following drawings, and for the sake of clarity, a number of practical details will be described in the following description. However, it should be understood by those skilled in the art that these practical details are not necessary in some embodiments of the present invention and therefore are not intended to limit the present invention. In addition, some of the conventional structures and elements are shown in the drawings in a simplified schematic manner in order to simplify the drawings. In addition, the dimensions of the various elements in the drawings are not shown in actual scale for the convenience of the reader.

FIG. 1 is a top view of a touch panel according to an embodiment of the present invention. 2 is a cross-sectional view of the touch panel of FIG. 1 taken along line 2-2. As shown in FIGS. 1 and 2 , the touch panel includes a transparent cover 100 , a touch sensing layer 200 , a first lead 300 , a second lead 400 , and a conductive structure 500 . The touch sensing layer 200, the first wire 300, the second wire 400 and the conductive structure 500 are disposed on the same side of the transparent cover 100, and can be covered and protected by the transparent cover 100. The touch sensing layer 200 includes a first electrode string 210 and a second power Polar string 220. The first electrode string 210 and the second electrode string 220 are disposed on the transparent cover 100. The first electrode string 210 has a length direction D1. The second electrode string 220 has a length direction D2. The length direction D1 of the first electrode string 210 intersects the length direction D2 of the second electrode string 220, and the first electrode string 210 is insulated from the second electrode string 220 to prevent short-circuiting between the two. The first wire 300 is electrically connected to the first electrode string 210. The second wire 400 is electrically connected to the second electrode string 220. At least a portion of the conductive structure 500 is located between the first wire 300 and the second wire 400 and separated from the first wire 300 and the second wire 400. In other words, the first wire 300 is spaced apart from the portion of the conductive structure 500 by a gap G1, and the second wire 400 is spaced apart from the portion of the conductive structure 500 by a gap G2.

Since the conductive structure 500 exists between the first wire 300 and the second wire 400, the conductive structure 500 can prevent the first wire 300 and the second wire 400 from directly generating a coupling capacitance, thereby reducing the first electrode string 210 and the second electrode. The capacitance at the intersection of string 220. In another way, a coupling capacitor C1 is generated between the conductive structure 500 and the first wire 300 closest to the conductive structure 500, and the conductive structure 500 and the second wire 400 closest to the conductive structure 500 generate a coupling capacitance C2. The two coupling capacitors C1 and C2 form an equivalent series capacitance, and the value of this equivalent series capacitance is . The equivalent series capacitance formed by the coupling capacitors C1 and C2 is relatively small compared to the coupling capacitance formed directly by the first wire 300 and the second wire 400. Therefore, disposing the conductive structure 500 between the first wire 300 and the second wire 400 can help reduce the coupling capacitance between the first wire 300 and the second wire 400.

In addition, the conductive structure 500 can also prevent shorting to the first wire 300 and/or the second wire 400. Further, as shown in FIG. 2, the conductive structure 500 includes a conductive oxide layer 510 and a dielectric oxide layer 520. The dielectric oxide layer 520 is disposed on the conductive oxide layer 510. The overall resistivity of the conductive oxide layer 510 and the dielectric oxide layer 520 is greater than at least twice the resistivity of the material of the conductive oxide layer 510, so that the overall square resistance R of the conductive oxide layer 510 and the dielectric oxide layer 520 satisfies 105 ohms. / square ≦ R ≦ 135 ohm / square. In other words, if the overall resistivity of the conductive structure 500 formed by the conductive oxide layer 510 and the dielectric oxide layer 520 is ρ1, and the resistivity of the material of the conductive oxide layer 510 is ρ2, ρ1>2*ρ2 is satisfied.

The above resistivity characteristics of the conductive structure 500 are due to the oxygen flux of the conductive oxide layer 510 at the time of fabrication. Further, in the manufacturing process of the conductive structure 500, the conductive material of the conductive oxide layer 510 may be deposited on the transparent cover 100 by sputtering. During the sputtering process, the oxygen flux can be controlled between 20 sccm (Standard Cubic Centimeter per Minute) and 50 sccm, preferably 30 sccm to 40 sccm. In other words, the conductive oxide layer 510 can be a sputter-formed structure. The sputter-formed structure can be formed using a flow rate of oxygen between 20 sccm and 50 sccm, preferably 30 sccm to 40 sccm. After the conductive oxide layer 510 is formed, the dielectric oxide layer 520 may be formed on the conductive oxide layer 510 to form a contact interface 530 with the conductive oxide layer 510. When the conductive oxide layer 510 is formed under such oxygen flux, and then the dielectric oxide layer 520 is formed on the conductive oxide layer 510, the overall electrical energy of the two is The resistivity will greatly exceed (more than double) the material resistivity of the conductive oxide layer 510. With such a characteristic, the square resistance R of the conductive structure 500 can satisfy 105 ohms/square ≦R ≦135 ohms/square and has high resistivity, which is advantageous for preventing short circuit with the first wire 300 or short circuit with the second wire 400, Or shorted to both the first wire 300 and the second wire 400.

For example, the conductive oxide layer 510 may include a transparent zinc oxide (ZnO) layer, an indium tin oxide (ITO) layer, an indium zinc oxide (IZO) layer, an indium gallium zinc oxide (IGZO) layer, and an aluminum zinc oxide (AZO) layer. a layer, an indium aluminum zinc oxide (IAZO) layer or any combination of the above, but the present invention is not limited thereto. The dielectric oxide layer 520 may include a tantalum oxide layer such as a cerium oxide (SiO ₂ ) layer or an organic oxide layer, but the present invention is not limited thereto. When the conductive oxide layer 510 of the above material is formed by high-flux (for example, between 20 sccm and 50 sccm) of oxygen, the yttrium oxide formed thereon is matched with the lanthanum oxide formed thereon, thereby effectively increasing the resistivity of the conductive structure 500. And to prevent short circuit problems.

Specifically, in some embodiments, the material of the conductive oxide layer 510 may be indium tin oxide (ITO), and the material of the dielectric oxide layer 520 may be germanium dioxide. In other words, the conductive oxide layer 510 can be an indium tin oxide layer, and the dielectric oxide layer 520 can be a hafnium oxide layer. The ruthenium dioxide layer is formed on the indium tin oxide layer and formed after the indium tin oxide layer, so that the indium tin oxide layer is in contact with the ruthenium dioxide layer. During the formation of the indium tin oxide layer, the flow rate of oxygen may be between 20 sccm and 50 sccm. As a result, the overall resistance of the indium tin oxide layer to the hafnium oxide layer can be at least 60 kilo ohms (the thickness of the indium tin oxide layer is 60 nm), and more than twice the resistance of indium tin oxide (about 30 kilo ohms). It can be seen that when the conductive oxide layer 510 is high in flux (for example: between The conductive structure 500 may have a high electrical resistivity when oxygen is formed between 20 sccm and 50 sccm. The following table lists the electrical resistance of the experimental group and the control group of the conductive structure 500 to assist in illustrating the conductive oxide layer 510 formed by the high-flux oxygen, and in combination with the cerium oxide layer, can help to greatly increase the resistivity of the conductive structure 500.

In the above table, the conductive structure of the experimental group comprises an indium tin oxide layer and a ceria layer formed on the indium tin oxide layer, and the indium tin oxide layer is in a high-flux oxygen (for example, between 20 sccm and 50 sccm) The conductive structure of the control group is an indium tin oxide layer of the same length and cross-sectional area, and the difference between the control group and the experimental group is that the indium tin oxide layer of the control group is in low-flux oxygen (for example Oxidized from 2sccm to 3sccm) The indium tin layer is not covered with the ruthenium dioxide layer; the conductive structure of the second control layer comprises an indium tin oxide layer of the same length and cross-sectional area, and the oxygen flux during the formation of the indium tin oxide layer and the oxygen flux of the experimental group Similarly, the difference between the control group 2 and the experimental group is that the indium tin oxide layer of the second control layer is not covered with the cerium oxide layer; the conductive structure of the third control group contains the indium tin oxide layer of the same length and cross-sectional area and formed in the indium oxide layer. The ruthenium dioxide layer on the tin layer, while the control group 3 differed from the experimental group in that the indium tin oxide layer of the control group was formed under low-flux oxygen (for example, 2 sccm to 3 sccm). From the comparison between the control group of the above table and the control group 2, when the indium tin oxide layer is formed under high-flux oxygen, the resistance value will be compared with the indium tin oxide layer formed under low-flux oxygen. Small increase, but little change. From the comparison between the control group of the above table and the control group 3, it can be known that the indium tin oxide layer formed under the low-flux oxygen is combined with the cerium oxide layer, and the resistance value is not greatly changed. From the comparison between the experimental group of the above table and the second and third groups of the control group, it can be known that when the indium tin oxide layer is formed under high-flux oxygen and formed in combination with the ceria layer, the resistance value of the formed conductive structure ( For example, it is about 99.3 kilohms to 113.0 kilohms, which greatly exceeds the resistance value of the conductive structure formed when the indium tin oxide layer is formed under low-flux oxygen and combined with the ceria layer (eg: It is between 20.3 kilo ohms and 22.0 kilo ohms. The square resistance R of the conductive structure of the present invention satisfies 105 ohms/square ≦R ≦135 ohms/square, while the conventional conductive structure R, formed under low-flux oxygen, has a square resistance R of 65 ohms/square ≦ R ≦ 85 ohms/square. . Therefore, when the indium tin oxide layer is formed by high-flux oxygen, and the conductive structure formed by combining with the ceria layer has a large square resistance and electrical resistivity, that is, the same thickness and cross-sectional area, The resistance is large.

In some embodiments, when the conductive oxide layer 510 is Qualcomm When the amount of oxygen (for example, between 20 sccm and 50 sccm) is formed, the crystal structure of the conductive oxide layer 510 may have a crystallinity in the (222) crystal direction of more than 70% and less than 100%. For example, when the conductive oxide layer 510 is an indium tin oxide layer, the crystal structure of the indium tin oxide layer may have a crystallinity in the (222) crystal direction of more than 70% and less than 100%. The X-ray diffraction data is used below to help explain the effect of oxygen flux on crystallinity. For this, see Figure 3, which shows the X-ray diffraction of the indium tin oxide layer formed under different oxygen fluxes. Figure (XRD chart). According to the analysis of the diffraction data of the figure, the crystallinity of the crystal structure of the indium tin oxide layer in the (222) crystal direction can be controlled by the oxygen flux, and the crystal structure of the indium tin oxide layer is crystallized at (222). The crystallinity in the direction is approximately positively correlated with the oxygen flux. Since the oxygen flux is substantially positively correlated with the crystallinity of the crystal structure in the (222) crystal direction, and the oxygen flux is substantially positively correlated with the resistivity of the conductive structure 500, it can be determined by crystallinity. The overall resistivity of the conductive structure 500 is judged. For example, if the crystal structure of the indium tin oxide layer of the conductive structure 500 has a crystallinity greater than 70% in the (222) crystal direction, it can be determined that the resistivity of the conductive structure 500 is sufficiently high to prevent the first lead 300 and / or the second wire 400 is shorted. It can be understood that the crystal orientation and the corresponding crystallinity described herein are merely examples, and the present invention is not limited thereto.

In some embodiments, as shown in FIG. 2 , the conductive oxide layer 510 is closer to the transparent cover 100 than the dielectric oxide layer 520 . Further, in the manufacturing process of the conductive structure 500, the conductive oxide layer 510 is formed on the transparent cover 100 under high-flux oxygen, and then a dielectric oxide layer is formed on the conductive oxide layer 510. 520, so the conductive oxide layer 510 will be dielectric The oxide layer 520 is closer to the transparent cover 100. In other words, the conductive oxide layer 510 is located between the dielectric oxide layer 520 and the transparent cover 100.

In some embodiments, as shown in FIGS. 1 and 2, the light transmissive cover 100 includes an inner surface 110 and an outer surface 120. The inner surface 110 is opposite the outer surface 120. The outer surface 120 can be used as a touch operation surface of the user. In some embodiments, the outer surface 120 may be provided with a functional layer such as anti-stain, anti-fingerprint, anti-scratch or anti-glare. The inner surface 110 has an opaque region 112 and a light transmissive region 114. The opaque region 112 is adjacent to the light transmissive region 114. In the present embodiment, the opaque region 112 is an outer region (or a peripheral region) of the inner surface 110, and the light transmissive region 114 is an inner region (or a central region) of the inner surface 110, and is surrounded by the opaque region 112. . In some embodiments, the inner surface 110 and the outer surface 120 may be chemically or physically strengthened surfaces to enhance the touch sensing layer 200, the first wire 300, the second wire 400, and the conductive layer under the transparent cover plate 100. The protective effect of the structure 500. In other words, the touch sensing layer 200, the first wire 300, the second wire 400, and the conductive structure 500 are disposed on the inner surface 110 of the transparent cover 100, and can be protected by the transparent cover 100. In some embodiments, the opaque region 112 can be implemented by providing a light shielding layer (such as ink) on the inner surface 110, but the present invention is not limited thereto.

In some embodiments, as shown in FIGS. 1 and 2, the electrically conductive structure 500 is located within the opaque region 112 of the inner surface 110. However, since the material of the conductive oxide layer 510 of the conductive structure 500 may be a light-transmitting conductive material (such as indium tin oxide), and the material of the dielectric oxide layer 520 may be a light-transmitting dielectric material (such as cerium oxide), the conductive structure 500 is light transmissive, and does not shield other components. Therefore, in some embodiments, the conductive structure 500 can also be at least partially located on the inner surface. In the light-transmitting region 114 of the 110, the area of the light-transmitting region 114 is expanded, that is, the visible area of the touch panel can be enlarged. It should be noted that when the conductive structure 500 is located in the transparent region 114, at least a portion of the conductive structure 500 may be located between the second electrode string 220 and the first conductive line 300 to separate the second electrode string 220 from the first conductive line. 300, thereby preventing the second electrode string 220 from directly generating a coupling capacitance with the first wire 300. In other words, when the conductive structure 500 is located in the light-transmitting region 114, the effect of reducing the coupling capacitance of the second electrode string 220 and the first wire 300 and the effect of enlarging the visible area can be achieved.

In some embodiments, as shown in FIG. 1 , the conductive structure 500 intersects the projection of the first wire 300 on the inner surface 110 of the transparent cover 100 , and the conductive structure 500 is insulated from the first wire 300 to avoid touching The signal number creates an unnecessary outflow. For example, the touch panel further includes an insulating structure 600. The insulating structure 600 is located at the intersection of the conductive structure 500 and the first conductive line 300, and separates the conductive structure 500 from the first conductive line 300, thereby insulating the conductive structure 500 from the first conductive line 300. In some embodiments, the conductive structure 500 is also insulated from the second conductive line 400 and the touch sensing layer 200 to prevent unnecessary outflow of the touch signal. Further, as long as the projection of the conductive structure 500 on the inner surface 110 of the transparent cover 100 and the first electrode string 210, the second electrode string 220, the first wire 300 or the second wire 400 on the inner surface 110 When the projections intersect, the insulating structure 600 is located between the conductive structure 500 and the first electrode string 210, the second electrode string 220, the first conductive line 300 or the second conductive line 400, so that the conductive structure 500 is insulated from the electrode strings and the wires. So as not to touch the signal to generate unnecessary outflow.

In some embodiments, as shown in FIG. 1, the first electrode string The length direction D1 of 210 and the length direction D2 of the second electrode string 220 may be perpendicular to each other. Further, the longitudinal direction D1 may be the horizontal axis direction in the first drawing, and the longitudinal direction D2 may be the vertical axis direction in the first drawing. The first electrode string 210 may include a plurality of first electrodes 212 and a plurality of first connecting portions 214. The first electrodes 212 and the first connecting portions 214 are alternately arranged along the longitudinal direction D1. Each of the first connecting portions 214 is connected to the two first electrodes 212 adjacent in the longitudinal direction D1. Similarly, the second electrode string 220 can include a plurality of second electrodes 222 and a plurality of second connections 224. The second electrode 222 and the second connecting portion 224 are alternately arranged along the longitudinal direction D2. Each of the second connecting portions 224 is connected to the two second electrodes 222 adjacent in the longitudinal direction D2. In some embodiments, the touch sensing layer 200 further includes an insulating block 230. The insulating block 230 is located at the intersection A of the first electrode string 210 and the second electrode string 220, and separates the first electrode string 210 from the second electrode string 220 to insulate the two. For example, the insulating block 230 may be located between the first connecting portion 214 of the first electrode string 210 and the second connecting portion 224 of the second electrode string 220 to partition the first connecting portion 214 from the second connecting portion 224. In some embodiments, the material of the first electrode 212, the first connecting portion 214, the second electrode 222, and the second connecting portion 224 may be indium tin oxide or indium zinc oxide, but the present invention is not limited thereto.

In some embodiments, when the material of the first electrode string 210 and the second electrode string 220 is indium tin oxide, and the material of the conductive oxide layer 510 is also indium tin oxide, the crystal structures of the two indium tin oxides are ( 222) The degree of crystallinity in the crystal direction is different. Further, the crystal structure of the conductive oxide layer 510 has a higher crystallinity in the (222) crystal direction and a higher resistivity to prevent short circuit, and the first electrode string 210 and the second electrode string 220 are No need to deliberately consider The short circuit problem between the wires and the wires can have a lower resistivity and improve the touch sensitivity. Therefore, the crystal structure of the first electrode string 210 and the second electrode string 220 can be more crystalline than the conductive oxide in the (222) crystal direction. The crystal structure of the layer 510 has a low crystallinity in the (222) crystal direction.

4 is a top view of a touch panel according to another embodiment of the present invention. As shown in FIG. 4 , the main difference between the present embodiment and the foregoing embodiment is that the touch panel of the present embodiment further includes a ground end 700 . The conductive structure 500 is electrically connected to the ground end 700. In this way, the conductive structure 500 can be used not only to reduce the coupling capacitance between the first wire 300 and the second wire 400, but also to serve as a grounding structure of the touch panel. Thereby, external electrostatic discharge (ESD) is prevented from affecting the touch sensing layer 200.

FIG. 5 is a top view of a touch panel according to another embodiment of the present invention. As shown in FIG. 5, the main difference between the present embodiment and the embodiment shown in FIG. 4 is that the conductive structure 500a is different in shape from the conductive structure 500 described above. Specifically, the conductive structure 500a is annular and surrounds the touch sensing layer 200. The conductive structure 500a is also electrically connected to the grounding end 700, and can be used as a grounding structure of the touch panel. In other words, the annular conductive structure 500a that can be used for grounding surrounds the first electrode string 210 and the second electrode string 220, so that the ESD can be further prevented from affecting the touch function of the touch sensing layer 200.

FIG. 6 is a top view of a touch panel according to another embodiment of the present invention. As shown in Fig. 6, the main difference between the present embodiment and the embodiment shown in Fig. 5 is that the conductive structure 500a is not electrically connected to the ground. That is, the annular design of the conductive structure 500a is used for non-grounding, and mainly serves to reduce the coupling between the first wire 300 and the second wire 400. The role of the capacitor.

FIG. 7 is a top view of a touch panel according to another embodiment of the present invention. As shown in Fig. 7, the main difference between the present embodiment and the embodiment shown in Fig. 5 is that the present embodiment further includes an outer ground structure 800. The outer ground structure 800 surrounds the conductive structure 500a, and the resistivity of the conductive structure 500a is higher than the resistivity of the outer ground structure 800, thereby facilitating most of the ESD to be exported from the outer ground structure 800, and avoiding ESD affecting the touch. The sensing layer 200, the first wire 300 and the second wire 400. Further, the conductive structure 500a and the external ground structure 800 are both connected to the grounding end 700, and the conductive structure 500a is surrounded by the external grounding structure 800, and can be used as an inner grounding structure of the touch panel. Since the conductive structure 500a surrounds the touch sensing layer 200 and the outer ground structure 800 surrounds the conductive structure 500a, the conductive structure 500a is closer to the touch sensing layer 200 than the outer ground structure 800. However, since the resistivity of the conductive structure 500a is higher than that of the external ground structure 800, when ESD occurs in the touch panel, the ESD is easier to advance toward the outer ground structure 800 having a low resistivity, and is less likely to be resistivity. The high conductive structure 500a advances, so that the ESD can be prevented from entering the conductive structure 500a, and the ESD can be further prevented from affecting the touch sensing layer 200 surrounded by the conductive structure 500a.

In some embodiments, the material of the conductive structure 500a is different from the material of the outer ground structure 800. Further, the conductive structure 500a may have a conductive oxide layer 510 and a dielectric oxide layer 520 (as shown in FIG. 2) as the conductive structure 500. The external ground structure 800 may be a metal, but the present invention is not limited thereto. Since the conductive oxide layer 510 formed under high-flux oxygen can make the conductive structure 500a have a higher resistivity than the metal, it can be beneficial for The resistivity of the conductive structure 500a is made higher than the resistivity of the outer ground structure 800, thereby helping the ESD to be derived from the outer ground structure 800 outside the touch panel.

In some embodiments, the outer ground structure 800 surrounds the first wire 300 and the second wire 400 to prevent the ESD from affecting the first wire 300 and the second wire 400. Specifically, in some embodiments, the first wire 300 and the second wire 400 are at least partially located between the conductive structure 500a and the outer ground structure 800.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Any one skilled in the art can make various changes and retouchings without departing from the spirit and scope of the present invention. The scope is subject to the definition of the scope of the patent application attached.

100‧‧‧Transparent cover

110‧‧‧ inner surface

112‧‧‧ opaque area

114‧‧‧Lighting area

200‧‧‧ touch sensing layer

210‧‧‧First electrode string

212‧‧‧First electrode

214‧‧‧First connection

220‧‧‧Second electrode string

222‧‧‧second electrode

224‧‧‧Second connection

230‧‧‧Insulation block

300‧‧‧First wire

400‧‧‧second wire

500‧‧‧Electrical structure

600‧‧‧Insulation structure

D1, D2‧‧‧ length direction

Claims (15)

An electrically conductive structure comprising: a conductive oxide layer; and a dielectric oxide layer disposed on the conductive oxide layer, the overall square resistance R of the conductive oxide layer and the dielectric oxide layer satisfying 105 ohms/square R 135 Ohm / square. The conductive structure according to claim 1, wherein the crystal structure of the conductive oxide layer has a crystallinity in the (222) crystal direction of more than 70% and less than 100%. The conductive structure of claim 1, wherein the conductive oxide layer comprises a transparent zinc oxide layer, an indium tin oxide layer, an indium zinc oxide layer, an indium gallium zinc oxide layer, an aluminum zinc oxide layer, and an oxidation. Indium aluminum zinc layer or any combination of the above. The conductive structure of claim 1 or 3, wherein the dielectric oxide layer comprises a tantalum oxide layer or an organic oxide layer. The conductive structure of claim 1, wherein the conductive oxide layer is an indium tin oxide layer, the dielectric oxide layer is a hafnium oxide layer, and the indium tin oxide layer is in contact with the hafnium oxide layer. The conductive structure of claim 1 or 5, wherein the conductive oxide layer is a sputter-formed structure, and the shape of the sputter-formed structure The flow rate of oxygen used is between 20 sccm and 50 sccm. A touch panel includes: a transparent cover; a plurality of electrode strings disposed on the transparent cover, the electrode strings are insulated from each other; and a plurality of wires electrically connected to the electrode strings; and at least one request The conductive structure of any one of items 1 to 6, wherein the conductive structure is insulated from the electrode strings and the wires, and at least a portion of the conductive structures are located between the wires or one of the electrode strings Between the one of the wires. The touch panel of claim 7, wherein the conductive oxide layer is closer to the transparent cover than the dielectric oxide layer. The touch panel of claim 7, wherein the conductive structure is annular and surrounds the electrode strings. The touch panel of claim 7, further comprising a grounding end, the conductive structure being electrically connected to the grounding end. The touch panel of claim 7, further comprising an outer ground structure surrounding the conductive structure, wherein the conductive structure has a resistivity higher than a resistivity of the outer ground structure. The touch panel of claim 7, wherein the conductive structure is transparent, and some or all of the components are located in a visible area of the touch panel. A touch panel includes: a transparent cover; a touch sensing layer disposed on the transparent cover; an inner grounding structure disposed on the transparent cover and surrounding the touch sensing layer And insulated from the touch sensing layer, the square resistance R of the inner ground structure satisfies 105 ohms/square ≦R ≦ 135 ohms/square; and an external ground structure surrounding the inner ground structure, wherein the resistivity of the inner ground structure Higher than the resistivity of the outer ground structure. The touch panel of claim 13, wherein the inner ground structure comprises a conductive oxide layer and a dielectric oxide layer, the dielectric oxide layer is disposed on the conductive oxide layer, wherein the conductive oxide layer has a crystal structure The degree of crystallinity in the (222) crystal direction is more than 70%. The touch panel of claim 13, wherein the inner ground structure is transparent, and some or all of the light is located in a visible area of the touch panel.