CN205721723U - Conductive structure and contact panel - Google Patents
Conductive structure and contact panel Download PDFInfo
- Publication number
- CN205721723U CN205721723U CN201620398301.9U CN201620398301U CN205721723U CN 205721723 U CN205721723 U CN 205721723U CN 201620398301 U CN201620398301 U CN 201620398301U CN 205721723 U CN205721723 U CN 205721723U
- Authority
- CN
- China
- Prior art keywords
- oxide layer
- conductive
- conductive structure
- wire
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Position Input By Displaying (AREA)
Abstract
This utility model provides a kind of conductive structure and the contact panel comprising this conductive structure.A kind of conductive structure comprises a conductive oxide layer and a dielectric oxide layer.Dielectric oxide layer is arranged on conductive oxide layer.Conductive oxide layer meets 105 ohm/side≤R≤135 ohm/side with overall sheet resistance R of dielectric oxide layer.The conductive structure that this utility model provides both can reduce the coupling electric capacity between wire, still prevents and wire short circuit.
Description
Technical field
This utility model relates to a kind of conductive structure, especially with regard to a kind of high resistivity conductive structure and
The contact panel of application.
Background technology
Typical contact panel comprises cover plate, touch-control sensing layer and wire.Touch-control sensing series of strata are arranged at lid
The visible area of plate.Wire system is arranged at the non-visible area of cover plate, and is electrically connected with touch-control sensing layer.General next
Saying, touch-control sensing layer comprises multiple first electrode array and multiple second electrode array.First electrode array and second
Electrode array separately and insulate, and the end of both electrode arrays is all connected with wire, in order to sensing
Touching signal passes to signal processing unit.
Under some form connected up, the wire connecting the first electrode array and the wire system being connected the second electrode array
Being distributed in abreast in the non-visible area of cover plate, such wire laying mode easily makes to produce between both wires
Raw coupling electric capacity, and then increase the electric capacity of the intersection of the first electrode array and the second electrode array, cause this to intersect
The electric capacity at place may be the most saturated before the most touched, and then affects the touch-control sensing function of this intersection.
Therefore, part contact panel also can comprise metallic ground structure, and this metallic ground structure system is arranged at even
Connect between the wire of the first electrode array and the wire being connected the second electrode array, to reduce between both wires
Coupling electric capacity, thus reduce the electric capacity of the intersection of the first electrode array and the second electrode array.
But, owing to the resistance of metallic ground structure is too low, therefore when metal structure and the hypotelorism of wire,
Easily short-circuit with wire.
Utility model content
Conductive structure disclosed by the embodiment of this utility model both can reduce the coupling electric capacity between wire,
Still prevent and wire short circuit.
According to one of this utility model embodiment, a kind of conductive structure comprises a conductive oxide layer and Jie
Oxide layer.Dielectric oxidation series of strata are arranged on conductive oxide layer.Conductive oxide layer is whole with dielectric oxide layer
Body sheet resistance R meets 105 ohm/side≤R≤135 ohm/side.
According to another embodiment of this utility model, a kind of contact panel comprises an euphotic cover plate, plural number electricity
Pole string, complex lead and at least one aforementioned conductive structure.These a little electrode array systems are arranged at this euphotic cover plate
Upper also mutually insulated.These a little wires are electrically connected with this little electrode arrays.Aforementioned conductive structure and electrode array
And wire insulation, and the part system of conductive structure is at this between a little wires or the one of these a little electrode arrays
And between the one of these a little wires.
In above-mentioned embodiment, overall sheet resistance R being collectively forming due to conductive oxide layer and dielectric oxide layer
Meet 105 ohm/side≤R≤135 ohm/side, therefore the overall resistivity of conductive structure can be promoted.Due to height
The conductive structure system of resistivity is between wire or between wire and electrode array, therefore not only can conduct electricity by it
Character reduces and couples electric capacity between wire or between wire with electrode array, also can be forthright by its high resistance
Matter prevents short circuit.
According to another embodiment of this utility model, a kind of contact panel comprises an euphotic cover plate, a touch-control
Inductive layer, ground structure and an external ground structure in one.Touch-control sensing series of strata are arranged on euphotic cover plate.
Interior ground structure system is arranged on euphotic cover plate, and around touch-control sensing layer, and insulate with touch-control sensing layer.
Sheet resistance R of interior ground structure meets 105 ohm/side≤R≤135 ohm/side.External ground structure ring connects around interior
Ground structure.The resistivity of interior ground structure is higher than the resistivity of external ground structure.
In above-mentioned embodiment, owing to interior ground structure is the conduction of high resistivity compared to external ground structure
Structure, in the case of identical length and cross-sectional area, interior ground structure has higher resistance, therefore can be beneficial to
Static discharge (ElectroStatic Discharge；ESD) from external ground structure derives contact panel, thus keep away
Exempt from electrostatic discharge effect wire and touch-control sensing layer.
Accompanying drawing explanation
Fig. 1 illustrates the top view of the contact panel according to this utility model one embodiment；
Fig. 2 illustrates the contact panel profile along 2-2 line of Fig. 1；
Fig. 3 is shown in the X-ray diffraction diagram of the different lower indium tin oxide layer formed of oxygen flux；
Fig. 4 illustrates the top view of the contact panel according to another embodiment of this utility model；
Fig. 5 illustrates the top view of the contact panel according to another embodiment of this utility model；
Fig. 6 illustrates the top view of the contact panel according to another embodiment of this utility model；
Fig. 7 illustrates the top view of the contact panel according to another embodiment of this utility model.
Primary symbols illustrates:
100: euphotic cover plate
110: inner surface
112: light tight region
114: transmission region
120: outer surface
200: touch-control sensing layer
210: the first electrode arrays
212: the first electrodes
214: the first connecting portions
220: the second electrode arrays
222: the second electrodes
224: the second connecting portions
230: collets
300: the first wires
400: the second wires
500,500a: conductive structure
510: conductive oxide layer
520: dielectric oxide layer
530: contact interface
600: insulation system
700: earth terminal
800: external ground structure
A: intersection
D1, D2: length direction
G1, G2: gap
Detailed description of the invention
With detailed description of the invention, this utility model is described in further detail below in conjunction with the accompanying drawings.
Hereinafter will schematically disclose the plural number embodiment of this utility model, as clearly stated, many real
Details in business will be explained in the following description.But, be familiar with the technical staff of this area it is understood that
Arriving, in this utility model some embodiments, details in these practices not necessarily, the most should
In order to limit this utility model.Additionally, for simplify graphic for the sake of, some known usual structures and assembly exist
Graphic middle will illustrate it in the way of simple signal.It addition, for the ease of reader watch, graphic in each assembly
Size not illustrate according to actual ratio.
Fig. 1 illustrates the top view of the contact panel according to this utility model one embodiment.Fig. 2 illustrates Fig. 1
Contact panel along the profile of 2-2 line.As shown in Figures 1 and 2, contact panel comprises euphotic cover plate
100, touch-control sensing layer the 200, first wire the 300, second wire 400 and conductive structure 500.Touch-control sense
Answering layer the 200, first wire the 300, second wire 400 and conductive structure 500 is to be arranged at euphotic cover plate 100
Same side, and can be covered by euphotic cover plate 100 and protect.Touch-control sensing layer 200 comprises the first electrode
String 210 and the second electrode array 220.First electrode array 210 and the second electrode array 220 are to be arranged at euphotic cover
On plate 100.First electrode array 210 has length direction D1.Second electrode array 220 has length direction
D2.The length direction D1 of the first electrode array 210 and length direction D2 of the second electrode array 220 intersects, and
First electrode array 210 insulate with the second electrode array 220, to prevent both short circuits.First wire 300 is electrical
Connect the first electrode array 210.Second wire 400 is electrically connected with the second electrode array 220.At least part of conduction
Structure 500 is to lead between the first wire 300 and the second wire 400 and with the first wire 300 and second
Line 400 separates.In other words, the first wire 300 and partially electronically conductive structure 500 separated by gap G1, and the
Two wires 400 and this partially electronically conductive structure 500 separated by gap G2.
Owing to there is conductive structure 500 between the first wire 300 and the second wire 400, therefore conductive structure
500 can avoid the first wire 300 directly to produce with the second wire 400 couples electric capacity, thus reduces the first electricity
The electric capacity of the intersection A of pole string 210 and the second electrode array 220.Putting this another way, conductive structure 500
Electric capacity C1 is coupled, conductive structure 500 with producing between the first wire 300 of conductive structure 500
Can produce with the second wire 400 near conductive structure 500 and couple electric capacity C2.The two coupling electric capacity C1
Equivalent series capacitance can be formed with C2, and the value of this equivalent series capacitance isCompared to first
What wire 300 was directly formed with the second wire 400 couples electric capacity, what coupling electric capacity C1 Yu C2 was formed etc.
Effect series capacitance is relatively small.Therefore, configuration conduction between the first wire 300 and the second wire 400
Structure 500 may help to reduce and couples electric capacity between the first wire 300 with the second wire 400.
Additionally, conductive structure 500 still prevents and the first wire 300 and/or the short circuit of the second wire 400.Enter
For one step, as in figure 2 it is shown, conductive structure 500 comprises conductive oxide layer 510 and dielectric oxide layer 520.
Dielectric oxide layer 520 is to be arranged on conductive oxide layer 510.Conductive oxide layer 510 and dielectric oxide layer 520
Overall resistivity more than the resistivity of material of the conductive oxide layer 510 of at least twice, in order to making conduction
Oxide layer 510 meets 105 ohm/side≤R≤135 ohm/side with overall sheet resistance R of dielectric oxide layer 520.
In other words, if the entirety of conductive structure 500 that formed of conductive oxide layer 510 and dielectric oxide layer 520
Resistivity is ρ 1, and the resistivity of the material of conductive oxide layer 510 is ρ 2, then meet ρ 1 ＞ 2* ρ 2.
The above-mentioned electrical resistivity property system of conductive structure 500 due to conductive oxide layer 510 make time oxygen lead to
Amount is produced.Furthermore, it is understood that in the manufacturing process of conductive structure 500, can be first with the side of sputter
Formula, is deposited on the conductive material of conductive oxide layer 510 on euphotic cover plate 100.During sputter,
Oxygen flux can by control between 20sccm (Standard Cubic Centimeter per Minute, per minute
Standard milliliters) and 50sccm between, preferably 30sccm to 40sccm.After conductive oxide layer 510 is formed,
Dielectric oxide layer 520 can be formed on conductive oxide layer 510, and formed with conductive oxide layer 510 and contact boundary
Face 530.After conductive oxide layer 510 is formed under such oxygen flux, on conductive oxide layer 510
When forming dielectric oxide layer 520, the overall resistivity of both can significantly surmount (exceeding twice) conductive oxide layer
The resistivity of material of 510.By such characteristic, sheet resistance R of conductive structure 500 can meet 105 ohm/
Side≤R≤135 ohm/side and there is high resistivity, and be beneficial to prevent and the first wire 300 short circuit or with the
Two wire 400 short circuits or the most short-circuit with the first wire 300 and the second wire 400.
For example, the material of conductive oxide layer 510 can comprise zinc oxide (ZnO), tin indium oxide (ITO), oxygen
Change indium zinc (IZO), indium gallium zinc (IGZO), aluminum zinc oxide (AZO), Indium sesquioxide. aluminum zinc (IAZO) or above-mentioned
Combination in any, but this utility model is not limited.The material of dielectric oxide layer 520 can comprise Si oxide,
Such as silicon dioxide (SiO2) or organic oxygen compound, but this utility model is not limited.Conduction when above-mentioned material
When oxide layer 510 is to be formed with the oxygen of high flux (such as: between 20sccm and 50sccm), then take
Join Si oxide formed thereon, the resistivity of conductive structure 500 can be effectively improved, and prevent short circuit from asking
Topic.
Specifically, in some embodiments, the material of conductive oxide layer 510 can be tin indium oxide (ITO),
And the material of dielectric oxide layer 520 can be silicon dioxide.In other words, conductive oxide layer 510 can be oxidation
Indium tin layer, and dielectric oxide layer 520 can be silicon dioxide layer.Silicon dioxide series of strata are formed at indium tin oxide layer
On, and formed after indium tin oxide layer so that indium tin oxide layer contacts with silicon dioxide layer.At Indium sesquioxide.
In the forming process of tin layers, the flow of oxygen can be between 20sccm and 50sccm.Consequently, it is possible to oxygen
Change the overall electrical resistance of indium tin layer and silicon dioxide layer to can reach at least 60 kilohms (thickness of indium tin oxide layer is
60nm), more than the resistance (about 30 kilohms) of tin indium oxide of twice.It follows that work as electric conductive oxidation
When layer 510 is to be formed with the oxygen of high flux (such as: between 20sccm and 50sccm), conductive structure
500 can have high resistivity.Following table enumerates the experimental group of conductive structure 500 and the resistance of matched group, assists
The conductive oxide layer 510 that high flux oxygen is formed is described, and after combining silicon dioxide layer, may help to significantly carry
Rise the resistivity of conductive structure 500.
In Yu Shangbiao, the conductive structure of experimental group comprises indium tin oxide layer and two be formed on indium tin oxide layer
Silicon oxide layer, and this indium tin oxide layer ties up to high flux oxygen (such as: between 20sccm and 50sccm)
Lower formation；The conductive structure of matched group one is the indium tin oxide layer of equal length and cross-sectional area, matched group
With the difference of experimental group, one is that the indium tin oxide layer of matched group one ties up to small throughput oxygen (such as 2sccm to 3
Sccm) formed under, and in Zinc oxide/indium oxide tin layers, do not cover silicon dioxide layer；The conductive structure of matched group two
Comprise the oxygen in the indium tin oxide layer of equal length and cross-sectional area, and this tin indium oxide layer formation process to lead to
Measuring identical with the oxygen flux of experimental group, the difference of matched group two and experimental group is the Indium sesquioxide. of matched group two
Silicon dioxide layer it is not covered with in tin layers；The conductive structure of matched group three comprises equal length and cross-sectional area
Indium tin oxide layer and the silicon dioxide layer being formed on indium tin oxide layer, and matched group three and the difference of experimental group
It is that the indium tin oxide layer of matched group three ties up to formation under small throughput oxygen (such as 2sccm to 3sccm).
Can be learnt by the contrast of upper table matched group one with matched group two, shape under indium tin oxide layer ties up to high flux oxygen
Cheng Shi, compared with the indium tin oxide layer formed under small throughput oxygen, resistance has small elevation, but change is not
Greatly.Can be learnt by the contrast of upper table matched group one with matched group three, the tin indium oxide formed under small throughput oxygen
Layer is in conjunction with silicon dioxide layer, and resistance is the most in a substantial change.By upper table experimental group and matched group two, three
Contrast can learn, formed when being formed under indium tin oxide layer ties up to high flux oxygen also and silicon dioxide layer
After in conjunction with, the resistance value (such as: about between 99.3 kilohms to 113.0 kilohms) of formed conductive structure, greatly
Surmount after being formed and be combined with silicon dioxide layer under indium tin oxide layer tying up to small throughput oxygen width, formed
The resistance value (such as: about between 20.3 kilohms to 22.0 kilohms) of conductive structure.Leading of this utility model
Sheet resistance R of electricity structure meets 105 ohm/side≤R≤135 ohm/side, and routine as under small throughput oxygen
Conductive structure sheet resistance R formed is 65 ohm/side≤R≤85 ohm/side.Therefore, when tin indium oxide series of strata
When being formed with high flux oxygen, and the conductive structure formed after being combined with silicon dioxide layer has bigger sheet resistance
And in the case of resistivity, namely same thickness and cross-sectional area, resistance is bigger.
In some embodiments, when conductive oxide layer 510 be with high flux (such as: between 20sccm with
Between 50sccm) oxygen formed time, the conductive oxide layer 510 degree of crystallinity on (222) crystallization direction can be more than
70% and less than 100%.For example, when conductive oxide layer 510 is indium tin oxide layer, this tin indium oxide
Layer degree of crystallinity on (222) crystallization direction can be more than 70% and less than 100%.Below with X-ray diffraction data
Helping the oxygen flux impact on degree of crystallinity is described, in this, see Fig. 3, this figure is shown in different oxygen
The X-ray diffraction diagram (XRD figure) of the lower indium tin oxide layer formed of flux.Via this figure diffraction data point
Analysis understands, and indium tin oxide layer degree of crystallinity on (222) crystallization direction can control by oxygen flux, and oxygen
Change indium tin layer degree of crystallinity on (222) crystallization direction the most positively related with oxygen flux system.Due to oxygen
Flux is the most positively related with the degree of crystallinity system on (222) crystallization direction, and oxygen flux and conductive structure 500
Resistivity be also the most positively related, therefore the overall electricity of conductive structure 500 can be judged by degree of crystallinity
Resistance rate.For example, if the indium tin oxide layer of conductive structure 500 degree of crystallinity on (222) crystallization direction is big
In 70%, then can determine that the resistivity of conductive structure 500 be high enough to be prevented from the first wire 300 and/
Or second wire 400 short circuit.It is to be understood that the corresponding degree of crystallinity of crystallization direction specifically described herein is only
For illustrating, this utility model is not limited thereto.
In some embodiments, as in figure 2 it is shown, conductive oxide layer 510 more leans on than dielectric oxide layer 520
Nearly euphotic cover plate 100.Furthermore, it is understood that in the manufacturing process of conductive structure 500, be first at high flux oxygen
Under gas, conductive oxide layer 510 is formed on euphotic cover plate 100, afterwards, then at conductive oxide layer 510
Upper formation dielectric oxide layer 520, therefore conductive oxide layer 510 can be than dielectric oxide layer 520 closer to euphotic cover plate
100.In other words, conductive oxide layer 510 is between dielectric oxide layer 520 and euphotic cover plate 100.
In some embodiments, as shown in Figures 1 and 2, euphotic cover plate 100 comprise inner surface 110 with
And outer surface 120.Inner surface 110 and outer surface 120 be back to.Outer surface 120 can be as user
Touch operation surface.In some embodiments, outer surface 120 can arrange anti-dirty, anti-fingerprint, anti-
Scrape or resist the functional layers such as dizzy.Inner surface 110 has light tight region 112 and transmission region 114.Light tight
Region 112 and transmission region 114 are adjacent.In present embodiment, light tight region 112 is interior table
The exterior lateral area (or neighboring area) in face 110, transmission region 114 be inner surface 110 inside region (or central authorities
Region), and by light tight region 112 institute around.In some embodiments, inner surface 110 and outer surface
120 can be the surface through chemically or physically strengthening, to promote the touch-control sensing layer below euphotic cover plate 100
200, the first wire the 300, second wire 400 and protected effect of conductive structure 500.In other words, touch
Control inductive layer the 200, first wire the 300, second wire 400 and conductive structure 500 are all to be arranged at euphotic cover
On the inner surface 110 of plate 100, and can be protected by euphotic cover plate 100.In some embodiments, no
Transmission region 112 can realize by arranging light shield layer (such as ink) on inner surface 110, but this utility model
It is not limited.
In some embodiments, as shown in Figures 1 and 2, conductive structure 500 is to be positioned at inner surface 110
Light tight region 112 in.But owing to the material of the conductive oxide layer 510 of conductive structure 500 can be printing opacity
Conductive material (such as tin indium oxide), and the material of dielectric oxide layer 520 can be that photo-imageable dielectric is (such as titanium dioxide
Silicon), therefore conductive structure 500 is printing opacity, without covering other assemblies, therefore, in some embodiments
In, conductive structure 500 also can be at least partially situated in the transmission region 114 of inner surface 110, and helps
Expand the area of transmission region 114, that is, the visible area area of contact panel can be expanded.It is worth explanation
Be, when conductive structure 500 is positioned at transmission region 114, conductive structure 500 at least partially can position
Between the second electrode array 220 and the first wire 300, to separate the second electrode array 220 and the first wire 300,
Thus avoid the second electrode array 220 directly to produce with the first wire 300 and couple electric capacity.In other words, when
When conductive structure 500 is positioned at transmission region 114, reduction the second electrode array 220 and the first wire can be taken into account
The effect of the coupling electric capacity of 300 and the effect expanding visible area area.
In some embodiments, as it is shown in figure 1, conductive structure 500 and the first wire 300 are at euphotic cover
Projection on the inner surface 110 of plate 100 is intersected, and conductive structure 500 insulate with the first wire 300, with
Exempt from so that touching signal produces unnecessary outflow.For example, contact panel also comprises insulation system 600.
Insulation system 600 is to be positioned at conductive structure 500 and the intersection of the first wire 300, and separates conductive structure
500 and first wire 300, so that conductive structure 500 insulate with the first wire 300.In part embodiment party
In formula, conductive structure 500 also insulate with the second wire 400 and touch-control sensing layer 200, in order to avoid making touching
Signal produces unnecessary outflow.As long as furthermore, it is understood that conductive structure 500 is within euphotic cover plate 100
Projection system on surface 110 and first electrode array the 210, second electrode array the 220, first wire 300 or the second
The wire 400 projection on inner surface 110 is intersected, then insulation system 600 can be positioned at conductive structure 500 with
Between first electrode array the 210, second electrode array the 220, first wire 300 or the second wire 400, in order to leading
Electricity structure 500 and these electrode arrays and wire insulation, in order to avoid touching signal produces unnecessary outflow.
In some embodiments, as it is shown in figure 1, the length direction D1 of the first electrode array 210 and second electricity
The length direction D2 of pole string 220 can be mutually perpendicular to.Furthermore, it is understood that length direction D1 can be in Fig. 1
X direction, and length direction D2 can be the y direction in Fig. 1.First electrode array 210 can comprise plural number
First electrode 212 and plural first connecting portion 214.These first electrodes 212 with the first connecting portion 214 are
Alongst D1 is alternately arranged.Each first connecting portion 214 is connected to phase on length direction D1
Two first electrodes 212 of neighbour.Similarly, the second electrode array 220 can comprise plural second electrode 222 and answer
Several second connecting portions 224.These second electrodes 222 and the second connecting portion 224 are alongst D2
It is alternately arranged.Each second connecting portion 224 is connected to two second electrodes adjacent on length direction D2
222.In some embodiments, touch-control sensing layer 200 also comprises collets 230.Collets 230 are position
In the first electrode array 210 and the intersection A of the second electrode array 220, and separate the first electrode array 210 and
Two electrode arrays 220, so that both insulate mutually.For example, collets 230 can be located at the first electrode array
Between first connecting portion 214 and second connecting portion 224 of the second electrode array 220 of 210, to separate first even
Connect portion 214 and the second connecting portion 224.In some embodiments, first electrode the 212, first connecting portion 214,
The material of the second electrode 222 and the second connecting portion 224 can be tin indium oxide or indium zinc oxide, but this practicality is new
Type is not limited.
In some embodiments, when the material of the first electrode array 210 and the second electrode array 220 is Indium sesquioxide.
Stannum, and when the material of conductive oxide layer 510 is also tin indium oxide, both tin indium oxides are in (222) crystallization side
Degree of crystallinity upwards is different.Furthermore, it is understood that the degree of crystallinity that conductive oxide layer 510 is on (222) crystallization direction
Higher, and there is higher resistivity, in order to preventing short circuit, and due to the first electrode array 210 and the second electricity
Pole string 220 without deliberately considering the short circuit problem between wire, and can have relatively low resistivity, carry
High touch-control sensitivity, therefore the first electrode array 210 and the crystallization on (222) crystallization direction of second electrode array 220
Degree is low than the conductive oxide layer 510 degree of crystallinity on (222) crystallization direction.
Fig. 4 illustrates the top view of the contact panel according to another embodiment of this utility model.As shown in Figure 4,
Main Differences between present embodiment and aforementioned embodiments is: the contact panel of present embodiment also wraps
Containing earth terminal 700.Conductive structure 500 is electrically connected with earth terminal 700.Consequently, it is possible to conductive structure 500 is not
Only can be used to reduce and couple electric capacity between the first wire 300 with the second wire 400, may further be used to as touching
The ground structure of control panel.Thus prevent external electrostatic discharges (ESD) from affecting touch-control sensing layer 200.
Fig. 5 illustrates the top view of the contact panel according to another embodiment of this utility model.As it is shown in figure 5,
Main Differences between present embodiment and Fig. 4 illustrated embodiment is: conductive structure 500a leads with aforementioned
The shape of electricity structure 500 is different.Specifically, conductive structure 500a is ring-type, and around touch-control sensing
Layer 200.Conductive structure 500a is also electrically connected with earth terminal 700, and can be as the ground structure of contact panel.
In other words, can be used for annular conductive structure 500a of ground connection around the first electrode array 210 and the second electrode array
220, so can further prevent ESD from affecting the touch controllable function of touch-control sensing layer 200.
Fig. 6 illustrates the top view of the contact panel according to another embodiment of this utility model.As shown in Figure 6,
Main Differences between present embodiment and Fig. 5 illustrated embodiment is: conductive structure 500a the most electrically connects
Connect earth terminal.It is to say, the purposes that the loop design of conductive structure 500a is ungrounded, and mainly can play
Reduce the effect coupling electric capacity between the first wire 300 with the second wire 400.
Fig. 7 illustrates the top view of the contact panel according to another embodiment of this utility model.As it is shown in fig. 7,
Main Differences between present embodiment and Fig. 5 illustrated embodiment is: present embodiment also comprises external
Ground structure 800.External ground structure 800 is around conductive structure 500a, and the resistivity of conductive structure 500a is high
In the resistivity of external ground structure 800, thereby can be beneficial to major part ESD derives tactile from external ground structure 800
Outside control panel, and ESD is avoided to affect touch-control sensing layer the 200, first wire 300 and the second wire 400.Enter
For one step, conductive structure 500a and external ground structure 800 are all connected with earth terminal 700, and conductive structure 500a
It is by 800 cinctures of external ground structure, and can be as the interior ground structure of contact panel.Due to conductive structure
500a is around touch-control sensing layer 200, and external ground structure 800 is around conductive structure 500a, therefore conductive structure
500a than external ground structure 800 closer to touch-control sensing layer 200.But, due to the electricity of conductive structure 500a
Resistance rate is higher than the resistivity of external ground structure 800, therefore when occurring ESD in contact panel, ESD relatively holds
Easily advance toward the external ground structure 800 that resistivity is low, and be less susceptible to before the high conductive structure 500a of resistivity
Enter, consequently, it is possible to can prevent ESD from entering conductive structure 500a, and can prevent ESD from affecting further
The touch-control sensing layer 200 of conductive structure 500a institute cincture.
In some embodiments, the material of conductive structure 500a is different from the material of external ground structure 800.
Furthermore, it is understood that conductive structure 500a can have conductive oxide layer 510 and dielectric such as conductive structure 500
Oxide layer 520 (as shown in Figure 2), external ground structure 800 can be metal, but this utility model is not limited.
Conductive oxide layer 510 owing to being formed under high-throughout oxygen can make conductive structure 500a have than gold
Belong to higher resistivity, therefore the resistivity the making conductive structure 500a electricity higher than external ground structure 800 can be beneficial to
Resistance rate, thus help ESD to derive contact panel from external ground structure 800.
In some embodiments, external ground structure 800 around the first wire 300 and the second wire 400, with
Prevent ESD from affecting the first wire 300 and the second wire 400.Specifically, in some embodiments,
First wire 300 and the second wire 400 are to be at least partially situated at conductive structure 500a and external ground structure 800
Between.
The foregoing is only preferred embodiment of the present utility model, not in order to limit this utility model,
All within spirit of the present utility model and principle, any modification, equivalent substitution and improvement etc. done, all
Should be included within the scope of this utility model protection.
Claims (15)
1. a conductive structure, it is characterised in that comprise:
One conductive oxide layer；And
One dielectric oxide layer, is arranged on this conductive oxide layer, this conductive oxide layer and this dielectric oxide layer
Overall sheet resistance R meets 105 ohm/side≤R≤135 ohm/side.
2. conductive structure as claimed in claim 1, it is characterised in that this conductive oxide layer is in (222) crystallization side
Degree of crystallinity upwards is more than 70% and less than 100%.
3. conductive structure as claimed in claim 1, it is characterised in that the material of this conductive oxide layer comprises
Bright zinc oxide, tin indium oxide, indium zinc oxide, indium gallium zinc, aluminum zinc oxide, Indium sesquioxide. aluminum zinc
Or above-mentioned combination in any.
4. the conductive structure as described in claim 1 or 3, it is characterised in that this dielectric oxide layer comprises silica
Compound or organic oxygen compound.
5. conductive structure as claimed in claim 1, it is characterised in that this conductive oxide layer is a tin indium oxide
Layer, this dielectric oxide layer is a silicon dioxide layer, and this indium tin oxide layer contacts with this silicon dioxide layer.
6. the conductive structure as described in claim 1 or 5, it is characterised in that this conductive oxide layer passes through sputter
Being formed, during this sputter, the flow of oxygen is between 20sccm and 50sccm.
7. a contact panel, it is characterised in that comprise:
One euphotic cover plate；
Plural number electrode array, is arranged on this euphotic cover plate, those electrode array mutually insulateds；
Complex lead, is electrically connected with those electrode arrays；And
At least just like the conductive structure according to any one of claim 1 to 6, this conductive structure and those electricity
Pole string and those wire insulations, and this conductive structure be at least partially between those wires,
Or between the one of those electrode arrays and the one of those wires.
8. contact panel as claimed in claim 7, it is characterised in that this conductive oxide layer is than this dielectric oxidation
Layer is closer to this euphotic cover plate.
9. contact panel as claimed in claim 7, it is characterised in that this conductive structure is ring-type, and ring
Around those electrode arrays.
10. contact panel as claimed in claim 7, it is characterised in that further including an earth terminal, this conduction is tied
Structure is electrically connected with this earth terminal.
11. contact panels as claimed in claim 7, it is characterised in that further include an external ground structure, around
This conductive structure, wherein the resistivity of this conductive structure is higher than the resistivity of this external ground structure.
12. contact panels as claimed in claim 7, it is characterised in that this conductive structure is transparent, partly
Or it is entirely located in the visible area of this contact panel.
13. 1 kinds of contact panels, it is characterised in that comprise:
One euphotic cover plate；
One touch-control sensing layer, is arranged on this euphotic cover plate；
Ground structure in one, is arranged on this euphotic cover plate, and around this touch-control sensing layer, and with this touch-control
Inductive layer insulate, and sheet resistance R of this interior ground structure meets 105 ohm/side≤R≤135 ohm/side；
And
One external ground structure, around this interior ground structure, wherein the resistivity of this interior ground structure is outer higher than this
The resistivity of ground structure.
14. contact panels as claimed in claim 13, it is characterised in that this interior ground structure comprises a conduction
Oxide layer and a dielectric oxide layer, these dielectric oxidation series of strata are arranged on this conductive oxide layer, wherein
This conductive oxide layer degree of crystallinity on (222) crystallization direction big sub 70%.
15. contact panels as claimed in claim 13, it is characterised in that this conductive structure is transparent, portion
Part or be entirely located in the visible area of this contact panel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620398301.9U CN205721723U (en) | 2016-04-28 | 2016-04-28 | Conductive structure and contact panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620398301.9U CN205721723U (en) | 2016-04-28 | 2016-04-28 | Conductive structure and contact panel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205721723U true CN205721723U (en) | 2016-11-23 |
Family
ID=57303420
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620398301.9U Expired - Fee Related CN205721723U (en) | 2016-04-28 | 2016-04-28 | Conductive structure and contact panel |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205721723U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107329635A (en) * | 2016-04-28 | 2017-11-07 | 宸美（厦门）光电有限公司 | Conductive structure and contact panel |
-
2016
- 2016-04-28 CN CN201620398301.9U patent/CN205721723U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107329635A (en) * | 2016-04-28 | 2017-11-07 | 宸美（厦门）光电有限公司 | Conductive structure and contact panel |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104915077B (en) | Touch sensible display device | |
| US9977544B2 (en) | Touch device and method for fabricating thereof | |
| CN201867785U (en) | Capacitance touch induction device | |
| CN101634922B (en) | Wiring structure and manufacturing method of capacitive touch screen | |
| WO2020029372A1 (en) | Touch screen and oled display panel | |
| KR102194607B1 (en) | Touch screen panel | |
| US9477358B2 (en) | Touch screen panel and method of manufacturing the same | |
| CN104656984B (en) | Contact panel | |
| WO2017020496A1 (en) | Base panel, manufacturing method thereof and display device | |
| CN103941895B (en) | Contact panel | |
| CN103376928A (en) | Touch panel and production method thereof | |
| US20180239471A1 (en) | Touch-sensor structures and methods of forming the same | |
| TWI588688B (en) | Touch panel and touch display panel | |
| US10437398B2 (en) | Touch substrate and method for manufacturing the same and touch screen | |
| CN108475152B (en) | Touch screen sensor | |
| CN111176485A (en) | Self-contained touch display panel | |
| CN101639749B (en) | Wiring and manufacturing method of capacitive touch screen | |
| CN205721723U (en) | Conductive structure and contact panel | |
| CN103677388A (en) | Touch control panel | |
| CN104076969A (en) | Touch panel and manufacturing method thereof | |
| CN102707834B (en) | The manufacture method of contact panel and touching inductive layer thereof | |
| CN203414929U (en) | Touch control panel | |
| CN101587408A (en) | Capacitance touch screen and method for preparing the same | |
| CN202735993U (en) | Touch panel | |
| US11126314B2 (en) | Touch substrate, touch control display apparatus, and method of fabricating a touch substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20161123 Termination date: 20180428 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |