TWM528019U - LED package structure - Google Patents
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- TWM528019U TWM528019U TW104219173U TW104219173U TWM528019U TW M528019 U TWM528019 U TW M528019U TW 104219173 U TW104219173 U TW 104219173U TW 104219173 U TW104219173 U TW 104219173U TW M528019 U TWM528019 U TW M528019U
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- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 5
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- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 5
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- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
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- OSOKRZIXBNTTJX-UHFFFAOYSA-N [O].[Ca].[Cu].[Sr].[Bi] Chemical compound [O].[Ca].[Cu].[Sr].[Bi] OSOKRZIXBNTTJX-UHFFFAOYSA-N 0.000 claims description 4
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Description
本創作係有關於一種發光二極體之結構，尤指針對於一種具有磁性薄膜之發光二極體之封裝結構。 The present invention relates to a structure of a light-emitting diode, in particular to a package structure of a light-emitting diode having a magnetic film.
目前生活上有各式各樣發光二極體的相關應用，其利用半導體的特殊性質發光，其中發光二極體發射的光為冷光。此種發光元件具有使用壽命長、重量輕及低耗能的優點，因此，此種發光元件已被使用於多種應用之中，例如交通號誌、機車尾燈、路燈、電腦指示燈、汽車頭燈等。 At present, there are various related applications of various light-emitting diodes, which utilize the special properties of semiconductors to emit light, wherein the light emitted by the light-emitting diodes is cold light. The light-emitting element has the advantages of long service life, light weight and low energy consumption. Therefore, the light-emitting element has been used in various applications, such as traffic signs, locomotive taillights, street lamps, computer indicators, and automobile headlights. Wait.
發光二極體由半導體晶片組成，這些半導體材料會透過注入或摻雜等技術以產生P型半導體層與N型半導體層架構。發光二極體內之電流可以輕易地從P型半導體層(陽極)流向N型半導體層(陰極)，僅能往一個方向導通，而相反方向則不能，即為順向偏壓，而使電洞和電子相遇而產生複合，電子會跌落到較低的能階，同時以光子的模式釋放出能量。 The light-emitting diodes are composed of semiconductor wafers which are subjected to techniques such as implantation or doping to produce a P-type semiconductor layer and an N-type semiconductor layer structure. The current in the light-emitting diode can easily flow from the P-type semiconductor layer (anode) to the N-type semiconductor layer (cathode), and can only be turned on in one direction, but not in the opposite direction, that is, forward bias, and the hole is made. When the electrons meet and recombine, the electrons will fall to a lower energy level, and the energy will be released in the photon mode.
近年來，環保意識在許多國家逐漸盛行，民眾也開始重視如何節省能源，為節省能源，使用不影響日常生活便利性，且仍具有有效節省能源的高能源效率電子裝置為一好的選擇。因此，如何增進發光元件的發光效率成為此領域中的重要議題。 In recent years, environmental awareness has become more prevalent in many countries, and the public has begun to pay attention to how to save energy. In order to save energy, it is a good choice to use high-energy-efficiency electronic devices that do not affect the convenience of daily life and still have effective energy conservation. Therefore, how to improve the luminous efficiency of a light-emitting element has become an important issue in this field.
現今的發光二極體科技已經趨近於成熟，但對於如何改善發光二 極體的發光效率得進展仍相當有限，若以固定電壓源驅動發光二極體的話，電源電壓的輕微差異或發光二極體偏壓因生產技術的離散性，都會使電流有較大的變化，由於發光二極體的發光亮度與電流有較直接關係，電流變化會導致發光二極體的亮度偏離想定值，電流若超出安全值的話會因功耗過大而使發光二極體永久損壞(二極體的整個工作區電壓基本不變，功耗大致與電流成正比)。因此，應以固定的電流驅動發光二極體，這樣發光二極體才可達至預期的亮度，及確保發光二極體不會因電流過大或功耗超出負荷而損壞，上述為傳統發光二極體的發光方式，如此僅能保證發光二極體的使用壽命，但無法使發光二極體的發光效率能夠提升，若要加大電流又會造成發光二極體的損毀，故，在不損壞發光二極體的前提之下，有關於如何提升發光二極體的發光效率，其為大家所共同追求的。 Today's LED technology is approaching maturity, but how to improve the light II The progress of the luminous efficiency of the polar body is still quite limited. If the light-emitting diode is driven by a fixed voltage source, the slight difference of the power supply voltage or the bias of the light-emitting diode due to the discreteness of the production technology will cause a large change in the current. Since the luminance of the light-emitting diode is directly related to the current, the current change may cause the brightness of the light-emitting diode to deviate from the desired value. If the current exceeds the safe value, the light-emitting diode may be permanently damaged due to excessive power consumption ( The voltage of the entire working area of the diode is basically constant, and the power consumption is roughly proportional to the current). Therefore, the light-emitting diode should be driven at a fixed current so that the light-emitting diode can reach the desired brightness, and the light-emitting diode is not damaged by excessive current or power consumption exceeding the load. The illuminating mode of the polar body can only guarantee the service life of the illuminating diode, but the luminous efficiency of the illuminating diode can not be improved. If the current is increased, the illuminating diode will be damaged. Therefore, no Under the premise of damaging the light-emitting diode, there is a question about how to improve the luminous efficiency of the light-emitting diode, which is commonly pursued by everyone.
故，本創作針對於習知技術之缺點進行改良，而提供一種發光二極體之封裝結構，以降低發光二極體內的電子通過移動速度，以提高電子電動對的複合機率，提高發光二極體之發光效率。 Therefore, the present invention aims to improve the shortcomings of the conventional technology, and provides a package structure of the light-emitting diode to reduce the electron passing speed in the light-emitting diode to improve the composite probability of the electronic electric pair and improve the light-emitting diode. The luminous efficiency of the body.
本創作之一目的，在於提供一種發光二極體之封裝結構，利用磁性薄膜設置於基座之上，該磁性薄膜能影響發光二極體內部電子移動率，透過降低該電子移動率，而提高電子與電動的複合機率，而改善發光二極體之發光效率。 The purpose of the present invention is to provide a package structure of a light-emitting diode, which is disposed on a pedestal by using a magnetic film, which can affect the internal electron mobility of the light-emitting diode and improve the electron mobility by reducing the electron mobility. The combined probability of electron and electric power improves the luminous efficiency of the light-emitting diode.
本創作之一目的，在於提供一種發光二極體之封裝結構，利用螢光粉直接排列於發光二極體晶片，而不需再額外利用封裝膠體混合螢光粉進行發光二極體晶片的封裝，以避免發光二極體的高溫 影響封裝膠體，導致封裝膠體黃化而影響發光二極體之發光效率。 One of the aims of the present invention is to provide a package structure of a light-emitting diode, which is directly arranged on a light-emitting diode wafer by using a phosphor powder, without additionally using an encapsulated colloid-mixed phosphor for encapsulation of a light-emitting diode chip. To avoid the high temperature of the light-emitting diode Affecting the encapsulation colloid, causing the encapsulation colloid to yellow and affect the luminous efficiency of the LED.
為達上述所指稱之一目的及功效，本創作提供一種發光二極體之封裝結構，其包含：一基座(submount)與一發光二極體單元，該基座於一表面上分設有一第一電性連接件與一第二電性連接件，該第一電性連接件包含至少一連接件及一磁性薄膜；以及該發光二極體單元具有一第一電極與一第二電極，該第一電極電性連接該第一電性連接件，該第二電極電性連接該第二電性連接件。 In order to achieve the above-mentioned purpose and effect, the present invention provides a package structure of a light-emitting diode, comprising: a submount and a light-emitting diode unit, the base is provided on a surface a first electrical connector and a second electrical connector, the first electrical connector includes at least one connector and a magnetic film; and the LED unit has a first electrode and a second electrode. The first electrode is electrically connected to the first electrical connector, and the second electrode is electrically connected to the second electrical connector.
本創作之一實施例，在於揭露該至少一連接件為二連接件時，該磁性薄膜設置於該二連接件之間。 In one embodiment of the present invention, when the at least one connecting member is a two connecting member, the magnetic film is disposed between the two connecting members.
本創作之一實施例，在於揭露該磁性薄膜設置於該至少一連接件之下。 An embodiment of the present invention is to disclose that the magnetic film is disposed under the at least one connecting member.
本創作之一實施例，在於揭露該磁性薄膜設置於該至少一連接件之上。 An embodiment of the present invention is to disclose that the magnetic film is disposed on the at least one connecting member.
本創作之一實施例，在於揭露該磁性薄膜摻雜至少一磁性元素的至少一化合物，該至少一磁性元素包括過渡金屬、稀土金屬或其組合，而該至少一化合物包括CuAlO2、CuGaO2、AgInO2、SrCu2O2、Cd2 SnO4、In2O3、TiO2、Cu2O、ZnO、SnO2、CdO、MnSe、ZnSe、CdSe、MgSe、ZnTe、MnTe、MgTe、CdTe、CdS、ZnS、HgS、HgSe、HdTe、NiO、MnO、GaN、InN、AlN、InAs、GaAs、AlAs、GaP、InP、GaSb、AlSb、InSb、Si、Ge、SiGe、SiC、石墨烯、奈米碳管、巴克球、Bi2Te3、Bi2 Se3、Sb2Te3、Sb2Se3、釔鋇銅氧化物(yttrium barium copper oxide,YBCO)、鉍鍶鈣銅氧化物 (bismuth strontium calcium copper oxide,BSCOO)、HgBaCaCuO(HBCCO)、FeAs、SmFeAs、CeFeAs、LaFeAs、MgB或其組合。 An embodiment of the present invention is to disclose at least one compound of the magnetic film doped with at least one magnetic element, the at least one magnetic element comprising a transition metal, a rare earth metal or a combination thereof, and the at least one compound comprises CuAlO 2 , CuGa O 2 , AgInO 2 , SrCu 2 O 2 , Cd 2 SnO 4 , In 2 O 3 , TiO 2 , Cu 2 O, ZnO, SnO 2 , CdO, MnSe, ZnSe, CdSe, MgSe, ZnTe, MnTe, MgTe, CdTe, CdS, ZnS, HgS, HgSe, HdTe, NiO, MnO, GaN, InN, AlN, InAs, GaAs, AlAs, GaP, InP, GaSb, AlSb, InSb, Si, Ge, SiGe, SiC, graphene, carbon nanotubes, Buck ball, Bi 2 Te 3 , Bi 2 Se 3 , Sb 2 Te 3 , Sb 2 Se 3 , yttrium barium copper oxide (YBCO), bismuth strontium calcium copper oxide BSCOO), HgBaCaCuO (HBCCO), FeAs, SmFeAs, CeFeAs, LaFeAs, MgB or a combination thereof.
本創作之一實施例，在於揭露該至少一磁性元素的含量佔該磁性薄膜成份總量中的3%-15%，其最佳佔成份總量的6%-9%。 An embodiment of the present invention is to disclose that the content of the at least one magnetic element accounts for 3%-15% of the total amount of the magnetic film component, and preferably accounts for 6%-9% of the total component.
本創作之一實施例，在於揭露該磁性薄膜之電子濃度介於5*1017cm-3到5*1020cm-3，而最佳電子濃度為5*1018cm-3到5*1019cm-3。 An embodiment of the present invention discloses that the magnetic film has an electron concentration ranging from 5*10 17 cm -3 to 5*10 20 cm -3 , and an optimum electron concentration is 5*10 18 cm -3 to 5*10. 19 cm -3 .
本創作之一實施例，在於揭露該磁性薄膜之材料包括摻雜Co的ZnO、摻雜Mn的ZnO或其組合。 An embodiment of the present invention is to disclose that the material of the magnetic film comprises Co-doped ZnO, Mn-doped ZnO or a combination thereof.
本創作之一實施例，在於揭露該磁性薄膜之材料包括Co、Fe、Ni、Mn、NiFe、CoFe、CoFeB、SmCo、NdFeB、式Ω FeN、式Ω FeC、CrO2、Fe3O4、式La1-x Φx Mn、式Ψ 2△ Σ O6、GdN、NiMnSb、PtMnSb、Fe1-x Cox Si、Fe2CrSi、Co2MnSi、式Fe2 θ Si、Cr2O3、TbMnO3、HoMn2O5、HoLuMnO3、YMnO3、DyMnO3、LuFe2O4、BiFeO3、BiMnO3、BaTiO3、PbVO3、PrMnO3、CaMnO3、K2SeO4、Cs2Cdl4、BaNiF4、ZnCr2Se4或其組合，其中該Ω在式Ω FeN及式Ω FeC中代表Ce、Pr、Nd、Sm、Eu、Tb、Dy、Ho、Er、Tm或Yb，該Φ在式La1-x Φx Mn中代表Ca、Ba或Sr，x在式La1-x Φx Mn中大約為0.3，該Ψ在式Ψ2△ Σ O6中代表Ca、Sr、或B，該△在式Ψ2△ Σ O6中代表Co或Fe，該Σ在式Ψ2△ Σ O6中代表Mo或Re，該θ在式Fe2 θ Si中代表Cr、Mn、Fe、Co或Ni，而x在Fe1-x Cox Si中大於0且小於1。 An embodiment of the present invention is to disclose that the material of the magnetic film comprises Co, Fe, Ni, Mn, NiFe, CoFe, CoFeB, SmCo, NdFeB, Ω FeN, Ω FeC, CrO 2 , Fe 3 O 4 , La1-x Φx Mn, Ψ 2△ Σ O6, GdN, NiMnSb, PtMnSb, Fe1-x Cox Si, Fe 2 CrSi, Co 2 MnSi, Fe 2 θ Si, Cr 2 O 3 , TbMnO 3 , HoMn 2 O 5 , HoLuMnO 3 , YMnO 3 , DyMnO 3 , LuFe 2 O 4 , BiFeO 3 , BiMnO 3 , BaTiO 3 , PbVO 3 , PrMnO 3 , CaMnO 3 , K 2 SeO 4 , Cs 2 Cdl 4 , BaNiF 4 , ZnCr 2 Se 4 or a combination thereof, wherein the [Omega] Representative Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm , or Yb, and the Ω FeN formula Ω FeC formula, the formula Φ in the La1-x Φx Mn Representative Ca, Ba or Sr, x in the formula La1-x Φx Mn is approximately 0.3, the [Psi] in formula Ψ 2 △ Σ O 6 represents Ca, Sr, or B, and the △ formula Ψ 2 △ Σ O 6 in Representing Co or Fe, which represents Mo or Re in the formula Ψ 2 Δ Σ O 6 , which represents Cr, Mn, Fe, Co or Ni in the formula Fe 2 θ Si, and x in Fe 1-x Cox Si Medium is greater than 0 and less than 1.
本創作之一實施例，在於揭露該磁性薄膜厚度大於15nm。 An embodiment of the present invention is to disclose that the magnetic film has a thickness greater than 15 nm.
本創作之一實施例，在於揭露該磁性薄膜厚度介於30nm到200nm，最佳厚度為50nm到100nm之間。 An embodiment of the present invention is to disclose that the magnetic film has a thickness of between 30 nm and 200 nm and an optimum thickness of between 50 nm and 100 nm.
本創作之一實施例，在於揭露該磁性薄膜之面積介於100um2到10000um2。 One embodiment of the present writing, wherein the magnetic thin film to expose an area of between 100um 2 to 10000um 2.
本創作之一實施例，在於揭露該第一電性連接件之該連接件與該第二電性連接件之材料為Ti或Au。 An embodiment of the present invention is to disclose that the material of the connecting member and the second electrical connecting member of the first electrical connecting member is Ti or Au.
本創作之一實施例，在於揭露該第一電性連接件與該第二電性連接件之厚度為100nm或300nm。 An embodiment of the present invention is to disclose that the thickness of the first electrical connector and the second electrical connector is 100 nm or 300 nm.
本創作之一實施例，在於揭露該第一電極與該第二電極之材料為Ti或Au。 An embodiment of the present invention is to disclose that the material of the first electrode and the second electrode is Ti or Au.
本創作之一實施例，在於揭露該發光二極體單元為24mil2，則該發光二極體單元與該磁性薄膜面積比例為1比37，亦或是該發光二極體單元為40mil2，則該發光二極體單元與該磁性薄膜面積比例為1比103。 An embodiment of the present invention is to disclose that the light emitting diode unit is 24 mil 2 , and the ratio of the area of the light emitting diode unit to the magnetic film is 1 to 37, or the light emitting diode unit is 40 mil 2 . Then, the ratio of the area of the light emitting diode unit to the magnetic film is 1 to 103.
本創作之一實施例，在於揭露進一步將鈷元素摻入於該基座內。 An embodiment of the present invention is to disclose further incorporation of cobalt into the susceptor.
本創作之一實施例，在於揭露該發光二極體單元，係包含：一基板、一N型半導體層、一發光層與一P型半導體層，該N型半導體層設置於該基板之一側；該發光層與該第一電極一併設置相對於該N型半導體層不具有該基板之一側；以及該P型半導體層設置相對於該發光層不具有該N型半導體之一側，該第二電極設置相對於該P型半導體層不具有該發光層之一側。 An embodiment of the present invention is directed to the light emitting diode unit, comprising: a substrate, an N-type semiconductor layer, a light emitting layer and a P-type semiconductor layer, wherein the N-type semiconductor layer is disposed on one side of the substrate The light-emitting layer is disposed along with the first electrode without one side of the substrate with respect to the N-type semiconductor layer; and the P-type semiconductor layer is disposed not to have one side of the N-type semiconductor with respect to the light-emitting layer, The second electrode is disposed not to have one side of the light-emitting layer with respect to the P-type semiconductor layer.
本創作提供另一種發光二極體之封裝結構，其包含一基座 (submount)與一發光二極體單元，該基座於一表面上分設有一第一電性連接件與一第二電性連接件，該第一電性連接件摻雜至少一磁性元素；以及該發光二極體單元具有一第一電極與一第二電極，該第一電極電性連接該第一電性連接件，該第二電極電性連接該第二電性連接件。 This creation provides another package structure for a light-emitting diode, which includes a pedestal a submount and a light emitting diode unit, the base is provided with a first electrical connecting component and a second electrical connecting component on a surface, the first electrical connecting component is doped with at least one magnetic element; The illuminating diode unit has a first electrode and a second electrode. The first electrode is electrically connected to the first electrical connector, and the second electrode is electrically connected to the second electrical connector.
本創作之一實施例，在於揭露該磁性薄膜摻雜至少一磁性元素的至少一化合物，該至少一磁性元素包括過渡金屬、稀土金屬或其組合，而該至少一化合物包括CuAlO2、CuGaO2、AgInO2、SrCu2O2、Cd2 SnO4、In2O3、TiO2、Cu2O、ZnO、SnO2、CdO、MnSe、ZnSe、CdSe、MgSe、ZnTe、MnTe、MgTe、CdTe、CdS、ZnS、HgS、HgSe、HdTe、NiO、MnO、GaN、InN、AlN、InAs、GaAs、AlAs、GaP、InP、GaSb、AlSb、InSb、Si、Ge、SiGe、SiC、石墨烯、奈米碳管、巴克球、Bi2Te3、Bi2 Se3、Sb2Te3、Sb2Se3、釔鋇銅氧化物(yttrium barium copper oxide,YBCO)、鉍鍶鈣銅氧化物(bismuth strontium calcium copper oxide,BSCOO)、HgBaCaCuO(HBCCO)、FeAs、SmFeAs、CeFeAs、LaFeAs、MgB或其組合。 An embodiment of the present invention is to disclose at least one compound of the magnetic film doped with at least one magnetic element, the at least one magnetic element comprising a transition metal, a rare earth metal or a combination thereof, and the at least one compound comprises CuAlO 2 , CuGaO 2 , AgInO 2 , SrCu 2 O 2 , Cd 2 SnO 4 , In 2 O 3 , TiO 2 , Cu 2 O, ZnO, SnO 2 , CdO, MnSe, ZnSe, CdSe, MgSe, ZnTe, MnTe, MgTe, CdTe, CdS, ZnS, HgS, HgSe, HdTe, NiO, MnO, GaN, InN, AlN, InAs, GaAs, AlAs, GaP, InP, GaSb, AlSb, InSb, Si, Ge, SiGe, SiC, graphene, carbon nanotubes, Buck ball, Bi 2 Te 3 , Bi 2 Se 3 , Sb 2 Te 3 , Sb 2 Se 3 , yttrium barium copper oxide (YBCO), bismuth strontium calcium copper oxide BSCOO), HgBaCaCuO (HBCCO), FeAs, SmFeAs, CeFeAs, LaFeAs, MgB or a combination thereof.
本創作之一實施例，在於揭露該至少一磁性元素的含量佔該磁性薄膜成份總量中的3%-15%，其最佳佔成份總量的6%-9%。 An embodiment of the present invention is to disclose that the content of the at least one magnetic element accounts for 3%-15% of the total amount of the magnetic film component, and preferably accounts for 6%-9% of the total component.
本創作之一實施例，在於揭露該磁性薄膜之電子濃度介於5*1017cm-3到5*1020cm-3，而最佳電子濃度為5*1018cm-3到5*1019cm-3。 An embodiment of the present invention discloses that the magnetic film has an electron concentration ranging from 5*10 17 cm -3 to 5*10 20 cm -3 , and an optimum electron concentration is 5*10 18 cm -3 to 5*10. 19 cm -3 .
本創作之一實施例，在於揭露該磁性薄膜之材料包括摻雜Co的ZnO、摻雜Mn的ZnO或其組合。 An embodiment of the present invention is to disclose that the material of the magnetic film comprises Co-doped ZnO, Mn-doped ZnO or a combination thereof.
本創作之一實施例，在於揭露該第一電性連接件之該連接件與該第二電性連接件之材料為Ti或Au。 An embodiment of the present invention is to disclose that the material of the connecting member and the second electrical connecting member of the first electrical connecting member is Ti or Au.
本創作之一實施例，在於揭露該第一電性連接件與該第二電性連接件之厚度為100nm或300nm。 An embodiment of the present invention is to disclose that the thickness of the first electrical connector and the second electrical connector is 100 nm or 300 nm.
本創作之一實施例，在於揭露該第一電極與該第二電極之材料為Ti或Au。 An embodiment of the present invention is to disclose that the material of the first electrode and the second electrode is Ti or Au.
本創作之一實施例，在於揭露該發光二極體單元為24mil2，則該發光二極體單元與該磁性薄膜面積比例為1比37，亦或是該發光二極體單元為40mil2，則該發光二極體單元與該磁性薄膜面積比例為1比103。 An embodiment of the present invention is to disclose that the light emitting diode unit is 24 mil 2 , and the ratio of the area of the light emitting diode unit to the magnetic film is 1 to 37, or the light emitting diode unit is 40 mil 2 . Then, the ratio of the area of the light emitting diode unit to the magnetic film is 1 to 103.
本創作之一實施例，在於揭露進一步將鈷元素摻入於該基座內。 An embodiment of the present invention is to disclose further incorporation of cobalt into the susceptor.
本創作之一實施例，在於揭露該發光二極體單元，係包含：一基板、一N型半導體層、一發光層與一P型半導體層，該N型半導體層設置於該基板之一側；該發光層與該第一電極一併設置相對於該N型半導體層不具有該基板之一側；以及該P型半導體層設置相對於該發光層不具有該N型半導體之一側，該第二電極設置相對於該P型半導體層不具有該發光層之一側。 An embodiment of the present invention is directed to the light emitting diode unit, comprising: a substrate, an N-type semiconductor layer, a light emitting layer and a P-type semiconductor layer, wherein the N-type semiconductor layer is disposed on one side of the substrate The light-emitting layer is disposed along with the first electrode without one side of the substrate with respect to the N-type semiconductor layer; and the P-type semiconductor layer is disposed not to have one side of the N-type semiconductor with respect to the light-emitting layer, The second electrode is disposed not to have one side of the light-emitting layer with respect to the P-type semiconductor layer.
1‧‧‧發光二極體之封裝結構 1‧‧‧Light-emitting diode package structure
11‧‧‧基座 11‧‧‧Base
111、111A‧‧‧第一電性連接件 111, 111A‧‧‧ first electrical connector
112、112A‧‧‧第二電性連接件 112, 112A‧‧‧Second electrical connector
113‧‧‧連接件 113‧‧‧Connecting parts
12‧‧‧發光二極體單元 12‧‧‧Lighting diode unit
121‧‧‧第一電極 121‧‧‧First electrode
122‧‧‧第二電極 122‧‧‧second electrode
123‧‧‧基板 123‧‧‧Substrate
124‧‧‧N型半導體層 124‧‧‧N type semiconductor layer
125‧‧‧發光層 125‧‧‧Lighting layer
126‧‧‧P型半導體層 126‧‧‧P type semiconductor layer
13‧‧‧磁性薄膜 13‧‧‧ Magnetic film
130‧‧‧磁性元素 130‧‧‧Magnetic elements
第一圖：其係為本創作之第一實施例之發光二極體之封裝結構之示意圖；第二圖：其係為本創作之第一實施例之發光二極體之封裝結構之數據示意圖；第三圖：其係為本創作之發光二極體之封裝方法之流程圖； 第四圖：其係為本創作之第二實施例之發光二極體之封裝結構之示意圖；第五圖：其係為本創作之第三實施例之發光二極體之封裝結構之示意圖；第六圖：其係為本創作之第四實施例之發光二極體之封裝結構之示意圖；第七圖：其係為本創作之第五實施例之發光二極體之封裝結構之示意圖；以及第八圖：其係為本創作之第六實施例之發光二極體之封裝結構之示意圖。 The first figure is a schematic diagram of the package structure of the light-emitting diode of the first embodiment of the present invention; the second figure is a data diagram of the package structure of the light-emitting diode of the first embodiment of the present invention. The third picture: it is a flow chart of the packaging method of the light-emitting diode of the present invention; The fourth figure is a schematic diagram of the package structure of the light-emitting diode of the second embodiment of the present invention; the fifth figure is a schematic diagram of the package structure of the light-emitting diode of the third embodiment of the present invention; 6 is a schematic diagram of a package structure of a light-emitting diode according to a fourth embodiment of the present invention; and a seventh diagram: a schematic diagram of a package structure of a light-emitting diode according to a fifth embodiment of the present invention; And the eighth figure: it is a schematic diagram of the package structure of the light-emitting diode of the sixth embodiment of the present invention.
為使 貴審查委員對本創作之特徵及所達成之功效有更進一步之瞭解與認識，謹佐以較佳之實施例及配合詳細之說明，說明如後：習知技術中，雖然發光二極體之技術已趨近於成熟，但對於如何改善發光二極體的發光效率得進展仍相當有限，由於發光二極體的發光亮度與電流有較直接關係，電流變化會導致發光二極體的亮度偏離想定值，電流若超出安全值的話會因功耗過大而使發光二極體永久損壞，故，通常發光二極體的電流都會在一定安全值內，但是相對來說，發光二極體的發光效率也不會有所提升，所以本創作針對於如何在不改變電流大小的情況下，能夠增加發光二極體之發光效率。 In order to give your reviewers a better understanding and understanding of the characteristics of the creation and the effects achieved, please refer to the preferred embodiment and the detailed description to illustrate the following: in the prior art, although the light-emitting diode The technology has become close to maturity, but the progress in improving the luminous efficiency of the light-emitting diode is still quite limited. Since the luminance of the light-emitting diode is directly related to the current, the current change causes the brightness of the light-emitting diode to deviate. If you want to set the value, if the current exceeds the safe value, the LED will be permanently damaged due to excessive power consumption. Therefore, the current of the LED will be within a certain safe value, but relatively speaking, the illumination of the LED is relatively high. The efficiency will not increase, so this creation is aimed at how to increase the luminous efficiency of the light-emitting diode without changing the current.
請參閱第一圖，其係為本創作之第一實施例之發光二極體之封裝結構之示意圖；如圖所示，本實施例為一種發光二極體之封裝結 構1，其包含一基座11(submount)與一發光二極體單元12，並該基座11上具有一磁性薄膜13，主要透過該磁性薄膜13之磁性影響發光二極體之內部電子流的移動速度，以提升該發光二極體單元12之發光效率。 Please refer to the first figure, which is a schematic diagram of a package structure of a light-emitting diode according to a first embodiment of the present invention; as shown in the figure, this embodiment is a package junction of a light-emitting diode. The structure 1 includes a pedestal 11 and a light-emitting diode unit 12, and the susceptor 11 has a magnetic film 13 thereon. The magnetic properties of the magnetic film 13 mainly affect the internal electron flow of the light-emitting diode. The moving speed is to increase the luminous efficiency of the light emitting diode unit 12.
於本實施例中，發光二極體之封裝方式為覆晶式發光二極體之封裝結構，該基座11於一表面上分設有一第一電性連接件111與一第二電性連接件112，該基座11之材質可為藍寶石、玻璃或陶瓷等等材料，該第一電性連接件111代表陰極，該第二電性連接件112代表陽極，該第一電性連接件111包含至少一連接件113及該磁性薄膜13，其中該第一電性連接件111之該至少一連接件113與該第二電性連接件112之材料為Ti或Au，並該第一電性連接件111與該第二電性連接件112之厚度為100nm或300nm，於本實施例中，該至少一連接件113為二連接件113時，該磁性薄膜13設置於該二連接件113之間，其中該磁性薄膜13摻雜至少一磁性元素之至少一化合物，該至少一磁性元素包括過渡金屬、稀土金屬或其組合，而該至少一化合物包括CuAlO2、CuGaO2、AgInO2、SrCu2O2、Cd2 SnO4、In2O3、TiO2、Cu2O、ZnO、SnO2、CdO、MnSe、ZnSe、CdSe、MgSe、ZnTe、MnTe、MgTe、CdTe、CdS、ZnS、HgS、HgSe、HdTe、NiO、MnO、GaN、InN、AlN、InAs、GaAs、AlAs、GaP、InP、GaSb、AlSb、InSb、Si、Ge、SiGe、SiC、石墨烯、奈米碳管、巴克球、Bi2Te3、Bi2 Se3、Sb2Te3、Sb2Se3、釔鋇銅氧化物(yttrium barium copper oxide,YBCO)、鉍鍶鈣銅氧化物(bismuth strontium calcium copper oxide,BSCOO)、HgBaCaCuO(HBCCO)、FeAs、SmFeAs、CeFeAs、LaFeAs、MgB或其 組合，又，該至少一磁性元素的含量佔該磁性薄膜13成份總量中的3%到15%之間，其最佳佔成份總量的6%到9%之間。 In this embodiment, the package of the light-emitting diode is a package structure of the flip-chip light-emitting diode. The base 11 is provided with a first electrical connection member 111 and a second electrical connection on a surface. The material of the pedestal 11 may be sapphire, glass or ceramic. The first electrical connector 111 represents a cathode, and the second electrical connector 112 represents an anode. The first electrical connector 111 The at least one connecting member 113 and the second electrical connecting member 112 of the first electrical connecting member 111 are made of Ti or Au, and the first electrical property is included. The thickness of the connecting member 111 and the second connecting member 112 is 100 nm or 300 nm. In the embodiment, when the at least one connecting member 113 is the two connecting members 113, the magnetic film 13 is disposed on the two connecting members 113. And wherein the magnetic film 13 is doped with at least one compound of at least one magnetic element, the at least one magnetic element comprising a transition metal, a rare earth metal or a combination thereof, and the at least one compound comprises CuAlO 2 , CuGaO 2 , AgInO 2 , SrCu 2 O 2 , Cd 2 SnO 4 , In 2 O 3 , TiO 2 , Cu 2 O, ZnO, SnO 2 , CdO, MnSe, ZnSe, CdSe, MgSe, ZnTe, MnTe, MgTe, CdTe, CdS, ZnS, HgS, HgSe, HdTe, NiO, MnO, GaN, InN, AlN, InAs, GaAs , AlAs, GaP, InP, GaSb, AlSb, InSb, Si, Ge, SiGe, SiC, graphene, carbon nanotubes, buckyball, Bi 2 Te 3 , Bi 2 Se 3 , Sb 2 Te 3 , Sb 2 Se 3 , yttrium barium copper oxide (YBCO), bismuth strontium calcium copper oxide (BSCOO), HgBaCaCuO (HBCCO), FeAs, SmFeAs, CeFeAs, LaFeAs, MgB or a combination thereof, Further, the content of the at least one magnetic element is between 3% and 15% of the total amount of the magnetic film 13, and it is preferably between 6% and 9% of the total amount of the composition.
另一實施例中，該磁性薄膜13之材料包括Co、Fe、Ni、Mn、NiFe、CoFe、CoFeB、SmCo、NdFeB、式Ω FeN、式Ω FeC、CrO2、Fe3O4、式La1-x Φx Mn、式Ψ 2△ Σ O6、GdN、NiMnSb、PtMnSb、Fe1-x Cox Si、Fe2CrSi、Co2MnSi、式Fe2 θ Si、Cr2O3、TbMnO3、HoMn2O5、HoLuMnO3、YMnO3、DyMnO3、LuFe2O4、BiFeO3、BiMnO3、BaTiO3、PbVO3、PrMnO3、CaMnO3、K2SeO4、Cs2Cdl4、BaNiF4、ZnCr2Se4或其組合，其中該Ω在式Ω FeN及式Ω FeC中代表Ce、Pr、Nd、Sm、Eu、Tb、Dy、Ho、Er、Tm或Yb，該Φ在式La1-x Φx Mn中代表Ca、Ba或Sr，x在式La1-x Φx Mn中大約為0.3，該Ψ在式Ψ2△ Σ O6中代表Ca、Sr、或B，該△在式Ψ2△ Σ O6中代表Co或Fe，該Σ在式Ψ2△ Σ O6中代表Mo或Re，該θ在式Fe2 θ Si中代表Cr、Mn、Fe、Co或Ni，而x在Fe1-x Cox Si中大於0且小於1。 In another embodiment, the material of the magnetic film 13 includes Co, Fe, Ni, Mn, NiFe, CoFe, CoFeB, SmCo, NdFeB, Ω FeN, Ω FeC, CrO 2 , Fe 3 O 4 , and La1- x Φx Mn, Ψ 2△ Σ O6, GdN, NiMnSb, PtMnSb, Fe1-x Cox Si, Fe 2 CrSi, Co 2 MnSi, Fe 2 θ Si, Cr 2 O 3 , TbMnO 3 , HoMn 2 O 5 , HoLuMnO 3 , YMnO 3 , DyMnO 3 , LuFe 2 O 4 , BiFeO 3 , BiMnO 3 , BaTiO 3 , PbVO 3 , PrMnO 3 , CaMnO 3 , K 2 SeO 4 , Cs 2 Cdl 4 , BaNiF 4 , ZnCr 2 Se 4 or a combination thereof, wherein the Ω represents Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm or Yb in the formula Ω FeN and the formula Ω FeC, the Φ represents Ca in the formula La1-x Φx Mn , Ba or Sr, x in the formula La1-x Φx Mn is approximately 0.3, the [Psi] in formula Ψ 2 △ 6 represents Σ O Ca, Sr, or B, and the △ formula Ψ 2 △ Σ O 6 represents Co Or Fe, which represents Mo or Re in the formula Ψ 2 Δ Σ O 6 , which represents Cr, Mn, Fe, Co or Ni in the formula Fe 2 θ Si, and x is greater in Fe 1-x Cox Si 0 and less than 1.
再另一實施例中，該磁性薄膜13之材料包括摻雜Co的ZnO、摻雜Mn的ZnO或其組合，於本創作之中，具有上述多種可製作成該磁性薄膜13之成分組合，本創作並不限定於上述之組合，其成分或組合可依據使用者之需求做調整。 In another embodiment, the material of the magnetic film 13 includes Co-doped ZnO, Mn-doped ZnO, or a combination thereof. In the present invention, the above-mentioned various combinations of the magnetic thin films 13 can be fabricated. The creation is not limited to the above combinations, and the components or combinations thereof can be adjusted according to the needs of the user.
再者，該發光二極體單元12具有一第一電極121、一第二電極122、一基板123、一N型半導體層124、一發光層125與一P型半導體層126，該基板123之材質可為藍寶石、玻璃或陶瓷等等材料，本實施例以藍寶石基板為例，該基板123、該N型半導體層124、該發光層125與該P型半導體層126依序堆疊設置，該第一電極121設置於該N型半導體層124，並位於該發光層125之一側，該第一電 極121為該N型半導體層124之電性連接點，該第二電極122設置於該P型半導體層126相對於該發光層125之另一側，該第二電極122為該P型半導體層126之電性連接點，其中該第一電極121與該第二電極122之厚度為100nm或300nm。 Furthermore, the LED unit 12 has a first electrode 121, a second electrode 122, a substrate 123, an N-type semiconductor layer 124, a light-emitting layer 125 and a P-type semiconductor layer 126. The material may be sapphire, glass, or ceramics. In this embodiment, the sapphire substrate is used as an example. The substrate 123, the N-type semiconductor layer 124, the luminescent layer 125, and the P-type semiconductor layer 126 are sequentially stacked. An electrode 121 is disposed on the N-type semiconductor layer 124 and located on one side of the light-emitting layer 125. The first electrode The pole 121 is an electrical connection point of the N-type semiconductor layer 124. The second electrode 122 is disposed on the other side of the P-type semiconductor layer 126 with respect to the light-emitting layer 125. The second electrode 122 is the P-type semiconductor layer. The electrical connection point of 126, wherein the thickness of the first electrode 121 and the second electrode 122 is 100 nm or 300 nm.
於本實施例中，該發光二極體單元12為覆晶式結構，其整體顛倒設置於該基座11，其中該第一電極121(N型)電性連接該第一電性連接件111(陰極)，該第二電極122(P型)電性連接該第二電性連接件112(陽極)。又，更進一步將鈷元素摻入於該基座11內。 In the present embodiment, the LED unit 12 is a flip-chip structure, and is integrally disposed on the pedestal 11 in an inverted manner. The first electrode 121 (N-type) is electrically connected to the first electrical connector 111. (Cathode), the second electrode 122 (P-type) is electrically connected to the second electrical connector 112 (anode). Further, a cobalt element is further incorporated in the susceptor 11.
另外，本實施例也針對於兩種尺寸之該發光二極體單元12界定相關數值範圍，該發光二極體單元12為24mil2，則該發光二極體單元12與該磁性薄膜13面積比例為1比37，亦或是該發光二極體單元12為40mil2，則該發光二極體單元12與該磁性薄膜13面積比例為1比103。 In addition, the present embodiment also defines a relevant numerical range for the two-dimensional size of the light-emitting diode unit 12, and the light-emitting diode unit 12 is 24 mil 2 , and the area ratio of the light-emitting diode unit 12 to the magnetic film 13 is When the ratio is 1 to 37, or the light-emitting diode unit 12 is 40 mil 2 , the area ratio of the light-emitting diode unit 12 to the magnetic thin film 13 is 1 to 103.
本實施例中，該基座11之該第一電性連接件111(陰極)施加負電壓，負極性載子(電子)從陰極流向陽極，其係為電子通過該第一電性連接件111而導入該第一電極121(N型)，當該電子通過該第一電性連接件111時，該電子受到該第一電性連接件111之該磁性薄膜13之影響，因該磁性薄膜13施加磁場，而磁場影響導入該發光二極體單元12之電子流，使電子的移動速率下降，於此狀態下，電子導入該第一電極121(N型)，進而導入於該N型半導體層124，該基座11之該第二電性連接件112(陽極)施加正電壓，電流則是由陽極流向陰極，其係為電流通過該第二電性連接件112而導入該第二電極122(P型)，並於該P型半導體層126產生正極性載子(電洞)，如此電子從該N型半導體層124流向該P型半導體層126， 進而電子會結合於該P型半導體層126靠近該N型半導體層124一側之電洞，其中利用該磁性薄膜13降低電子的移動速率，即提高電子通過該發光層125所需的時間，改良不對稱的載子流動，驅使電子能夠更加容易的與電洞結合，增加電子電洞對的複合機率，而伴隨著電子與電洞的結合，兩者的能量被轉變為光和熱的形式放出。 In this embodiment, the first electrical connecting member 111 (cathode) of the susceptor 11 applies a negative voltage, and the negative polarity carrier (electron) flows from the cathode to the anode, and the electrons pass through the first electrical connecting member 111. The first electrode 121 (N-type) is introduced, and when the electron passes through the first electrical connector 111, the electron is affected by the magnetic film 13 of the first electrical connector 111, because the magnetic film 13 When a magnetic field is applied, the magnetic field affects the flow of electrons introduced into the light-emitting diode unit 12, and the rate of movement of electrons is lowered. In this state, electrons are introduced into the first electrode 121 (N-type) and further introduced into the N-type semiconductor layer. 124. The second electrical connector 112 (anode) of the susceptor 11 applies a positive voltage, and the current flows from the anode to the cathode, and the current is introduced into the second electrode 122 through the second electrical connector 112. (P-type), and a positive polarity carrier (hole) is generated in the P-type semiconductor layer 126, such that electrons flow from the N-type semiconductor layer 124 to the P-type semiconductor layer 126, Further, electrons are coupled to the hole of the P-type semiconductor layer 126 near the side of the N-type semiconductor layer 124, wherein the magnetic film 13 is used to reduce the rate of movement of electrons, that is, to increase the time required for electrons to pass through the light-emitting layer 125, and to improve Asymmetric carrier flow drives electrons to be more easily combined with holes, increasing the composite probability of electron hole pairs, and with the combination of electrons and holes, the energy of both is converted into light and heat. .
請一併參閱第二圖，其係為本創作之第一實施例之發光二極體之封裝結構之數據示意圖；如圖所示，本實施例中，該磁性薄膜13標示為M-film，本實施例係將未具有該磁性薄膜13之該發光二極體(A)與具有該磁性薄膜13之該發光二極體單元12(B)進行霍爾量測電子移動率的變化，並於此兩種(A)與(B)分組下，各分別有(1)~(6)組數據，而(1)~(6)組數據中又可細分為三個比對項目，A項目之數據係在於比對該磁性薄膜13之磁性元素含量變化，其量測數據分別為(1)0%、(2)5%、(3)5.5%%與(4)6%，其厚度皆為100nm，其可以得知具有該磁性薄膜13之發光二極體的電子移動率相較於不具有該磁性膜膜13發光二極體的電子移動率低。B項目之數據係在於比對該磁性薄膜13之厚度變化，其量測厚度分別為(2)100nm與(5)30nm，其可以得知發光二極體之該磁性薄膜13的厚度越厚，則電子移動率越低。C項目之數據係在於比對該磁性薄膜13之摻雜濃度變化，其厚度皆為100nm，其量測數據分別為(2)c.c.=2.0519cm-3與(6)c.c.=1.1120cm-3，其可以得知發光二極體之該磁性薄膜13的摻雜濃度越大，則電子移動率越低。 Please refer to the second figure, which is a data diagram of the package structure of the light-emitting diode of the first embodiment of the present invention; as shown in the figure, in the embodiment, the magnetic film 13 is labeled as M-film. In this embodiment, the light-emitting diode (A) not having the magnetic film 13 and the light-emitting diode unit 12 (B) having the magnetic film 13 are subjected to Hall measurement electronic mobility change, and Under the two groups (A) and (B), there are (1)~(6) groups of data, and the data of (1)~(6) group can be subdivided into three comparison items. The data is based on the change in the content of the magnetic elements of the magnetic film 13, and the measured data are (1) 0%, (2) 5%, (3) 5.5%%, and (4) 6%, respectively. At 100 nm, it can be seen that the electron mobility of the light-emitting diode having the magnetic film 13 is lower than that of the light-emitting diode without the magnetic film 13. The data of the B item is based on the thickness variation of the magnetic film 13, and the measured thicknesses are (2) 100 nm and (5) 30 nm, respectively, and it can be known that the thicker the thickness of the magnetic film 13 of the light-emitting diode is, The lower the electron mobility. The data of the C item is based on the change of the doping concentration of the magnetic film 13, and the thickness thereof is 100 nm, and the measured data are (2) cc = 2.05 19 cm -3 and (6) cc = 1.11 20 cm - respectively. 3. It can be known that the larger the doping concentration of the magnetic thin film 13 of the light-emitting diode, the lower the electron mobility.
承上所述，本實施例針對該磁性薄膜13的相關細部特徵與範圍如下，該磁性薄膜13厚度大於15nm，其較佳厚度介於30nm到200nm ，最佳厚度為50nm到100nm之間，而該磁性薄膜13之面積介於100um2到10000um2，該磁性薄膜13之電子濃度介於5*1017cm-3到5*1020cm-3，而最佳電子濃度為5*1018cm-3到5*1019cm-3。 As described above, the relevant detailed features and ranges of the magnetic film 13 of the present embodiment are as follows. The magnetic film 13 has a thickness of more than 15 nm, a preferred thickness of 30 nm to 200 nm, and an optimum thickness of 50 nm to 100 nm. The magnetic film 13 has an area of 100 um 2 to 10000 um 2 , and the magnetic film 13 has an electron concentration of 5*10 17 cm -3 to 5*10 20 cm -3 , and the optimum electron concentration is 5*10 18 cm. -3 to 5*10 19 cm -3 .
本實施例針對於習知技術進行改良，現今的發光二極體科技已經趨近於成熟，但對於如何改善發光二極體的發光效率得進展仍相當有限，電流與發光亮度有較直接關係，電流輸出若超出安全值的話，其會因功耗過大而使發光二極體永久損壞，且提高輸出功率就代表著需要耗費更多能源，如此情況下，並不會有較好的結果產生，如何不須多加耗費能源的情況下，改善原有發光二極體的發光效率，是本案目的之一，故，本實施例透過於該基座11上之該第一電性連接件111(陰極)具有該磁性薄膜13，透過該磁性薄膜13之磁場影響該發光二極體單元12，其改良不對稱載子流動，且增加電子電洞對之複合機率，如此情形下，能夠提高該發光二極體單元12之發光效率。 This embodiment is directed to the improvement of the prior art, and the current light-emitting diode technology has become close to maturity, but the progress of how to improve the luminous efficiency of the light-emitting diode is still quite limited, and the current has a direct relationship with the brightness of the light. If the current output exceeds the safe value, the LED will be permanently damaged due to excessive power consumption, and increasing the output power means that more energy is needed. In this case, there is no good result. It is one of the purposes of the present invention to improve the luminous efficiency of the original light-emitting diode without excessive energy consumption. Therefore, the first electrical connecting member 111 (cathode) is transparent to the susceptor 11 in this embodiment. The magnetic film 13 is provided, and the magnetic field transmitted through the magnetic film 13 affects the light-emitting diode unit 12, which improves the flow of the asymmetric carrier and increases the composite probability of the electron hole pair. In this case, the light-emitting diode can be improved. The luminous efficiency of the polar body unit 12.
請參閱第三圖，其係為本創作之發光二極體之封裝方法之流程圖；如圖所示，本實施例係用於說明第一實施例之實施方式，本實施例依下列步驟為之，於第一步驟S100中，取該基座11(submount)；於第二步驟S200中，分別鍍設該第一電性連接件111與該第二電性連接件112於該基座11上，其中該第一電性連接件111包含至少一連接件113與該磁性薄膜13，依序將該至少一連接件113與該磁性薄膜13鍍設於該基座11；於第三步驟S300中，取該發光二極體單元12，其包含該第一電極121與該第二電極122，將該發光二極體單元12已覆晶方式鍍設於該基座11上，該第一電極連121連接該第一電性連接件111，該第二電極122連接該第 二電性連接件112。 Please refer to the third figure, which is a flowchart of the encapsulation method of the light-emitting diode of the present invention; as shown in the figure, the embodiment is used to explain the embodiment of the first embodiment, and the following steps are In the first step S100, the pedestal 11 is taken (submount); in the second step S200, the first electrical connecting member 111 and the second electrical connecting member 112 are respectively plated on the pedestal 11 The first electrical connector 111 includes at least one connecting member 113 and the magnetic film 13, and the at least one connecting member 113 and the magnetic film 13 are sequentially plated on the base 11; in a third step S300 The illuminating diode unit 12 includes the first electrode 121 and the second electrode 122. The illuminating diode unit 12 is plated on the susceptor 11 and the first electrode. The connection 121 connects the first electrical connector 111, and the second electrode 122 connects the first Two electrical connectors 112.
承上所述，本創作之實施方式係透過將該第一電性連接件111鍍設於該基座11，使該至少一連接件113與該磁性薄膜13皆設置於基座11上，本創作之製程方法係為了避免將該磁性薄膜13鍍設於該發光二極體單元12上之缺點，若將該磁性薄膜13鍍設於該發光二極體單元12，其需要利用到高溫回火，才能使該磁性薄膜13產生足夠的附著力，而附著於該發光二極體單元12上，但此種情況下，高溫會影響到該發光二極體單元12之接面電阻與電性問題，且也要一併考慮到該磁性薄膜13之附著力因素，不但會造成製程上的麻煩，也會降低生產良率，故，將該磁性薄膜13鍍設於該基座11上，其不需要考慮電性問題，所以利用高溫回火處理該磁性薄膜13時，該基座11不會受到任何影響，如此以提高生產良率。另外，將該磁性薄膜13設置於該基座11上，能夠不限制該發光二極體單元12的型式，該基座11於選擇使用該發光二極體單元12上，具有較大的包容性。 As described above, in the embodiment of the present invention, the first electrical connector 111 is plated on the susceptor 11, and the at least one connector 113 and the magnetic film 13 are disposed on the pedestal 11. In order to avoid the disadvantage that the magnetic film 13 is plated on the light-emitting diode unit 12, the magnetic film 13 is plated on the light-emitting diode unit 12, and it is required to use high-temperature tempering. In order to make the magnetic film 13 have sufficient adhesion to adhere to the LED unit 12, in this case, the high temperature may affect the junction resistance and electrical properties of the LED unit 12. Moreover, the adhesion factor of the magnetic film 13 is also taken into consideration, which not only causes trouble in the process, but also reduces the production yield. Therefore, the magnetic film 13 is plated on the susceptor 11, which is not The electrical problem needs to be considered, so when the magnetic film 13 is treated by high temperature tempering, the susceptor 11 is not affected at all, so as to improve the production yield. In addition, the magnetic thin film 13 is disposed on the susceptor 11, and the type of the illuminating diode unit 12 can be not limited. The susceptor 11 has a large inclusiveness when the illuminating diode unit 12 is selectively used. .
請參閱第四圖，其係為本創作之第二實施例之發光二極體之封裝結構之示意圖；如圖所示，本實施例與第一實施例之差異在於，本實施例之該第一電性連接件111包含該至少一連接件113與該磁性薄膜13，該至少一連接件113為單一連接件113時，該連接件113設置於該基座11上，而該磁性薄膜13設置於該連接件113之上。 Please refer to the fourth figure, which is a schematic diagram of the package structure of the light-emitting diode according to the second embodiment of the present invention; as shown in the figure, the difference between the embodiment and the first embodiment is that the first embodiment of the present embodiment An electrical connector 111 includes the at least one connecting member 113 and the magnetic film 13. When the at least one connecting member 113 is a single connecting member 113, the connecting member 113 is disposed on the base 11, and the magnetic film 13 is disposed. Above the connector 113.
請參閱第五圖，其係為本創作之第三實施例之發光二極體之封裝結構之示意圖；如圖所示，本實施例與第二實施例之差異在於，本實施例之該至少一連接件113與該磁性薄膜13之設置方式相反 ，該磁性薄膜13設置於該基座11上，而該連接件113設置於該連接件113之上。 Please refer to FIG. 5 , which is a schematic diagram of a package structure of a light-emitting diode according to a third embodiment of the present invention; as shown in the figure, the difference between this embodiment and the second embodiment is that at least the embodiment A connecting member 113 is disposed opposite to the magnetic film 13 The magnetic film 13 is disposed on the base 11 , and the connecting member 113 is disposed on the connecting member 113 .
請參閱第六圖，其係為本創作之第四實施例之發光二極體之封裝結構之示意圖；如圖所示，本實施例與第二實施例之差異在於，本實施例為水平式發光二極體結構，該發光二極體單元12之該基板123設置於該基座11上，而該發光二極體單元12之該第一電極121銲線連接於該第一電性連接件111之該磁性薄膜13，該第二電極122銲線連接於該第二電性連接件112。 Please refer to the sixth figure, which is a schematic diagram of the package structure of the light-emitting diode according to the fourth embodiment of the present invention; as shown in the figure, the difference between the embodiment and the second embodiment is that the embodiment is horizontal a light-emitting diode structure, the substrate 123 of the light-emitting diode unit 12 is disposed on the base 11 , and the first electrode 121 of the light-emitting diode unit 12 is wire-bonded to the first electrical connector The magnetic film 13 of the 111, the second electrode 122 is wire bonded to the second electrical connector 112.
請參閱第七圖，其係為本創作之第五實施例之發光二極體之封裝結構之示意圖；如圖所示，本實施例與第一實施例之差異在於，本實施例之一第一電性連接件111A係摻雜至少一磁性元素130，而並非以分層方式設置，該發光二極體單元12也是以覆晶式發光二極體結構之設置方式，該發光二極體單元12以覆晶方式設置於該基座11，並分別電性連接於該第一電性連接件111A與一第二電性連接件112A，其它結構皆相同於第一實施例，故，於此不再贅述。 Please refer to the seventh figure, which is a schematic diagram of a package structure of a light-emitting diode according to a fifth embodiment of the present invention; as shown in the figure, the difference between this embodiment and the first embodiment is that one of the embodiments is An electrical connector 111A is doped with at least one magnetic element 130, and is not disposed in a layered manner. The LED unit 12 is also arranged in a flip-chip LED structure. 12 is disposed on the pedestal 11 in a flip chip manner, and is electrically connected to the first electrical connecting member 111A and the second electrical connecting member 112A respectively. The other structures are the same as in the first embodiment. No longer.
請參閱第八圖，其係為本創作之第六實施例之發光二極體之封裝結構之示意圖；如圖所示，本實施例與第五實施例之差異在於，本實施例之該發光二極體單元12係以水平式發光二極體結構之設置方式，該發光二極體單元12以銲線方式分別連接於該第一電性連接件111A與該第二電性連接件112A。 Please refer to FIG. 8 , which is a schematic diagram of a package structure of a light-emitting diode according to a sixth embodiment of the present invention; as shown in the figure, the difference between this embodiment and the fifth embodiment lies in that the light of the embodiment is The diode unit 12 is arranged in a horizontal LED structure, and the LED unit 12 is respectively connected to the first electrical connector 111A and the second electrical connector 112A by wire bonding.
綜上所述，本創作為一種發光二極體之封裝結構，其包含一基座(submount)與一發光二極體單元，該基座(submount)於一表面 上分設有一第一電性連接件與一第二電性連接件，該第一電性連接件包含至少一連接件及一磁性薄膜；以及該發光二極體單元具有一第一電極與一第二電極，該第一電極電性連接該第一電性連接件，該第二電極電性連接該第二電性連接件。本創作將該磁性薄膜鍍設於該基座(submount)，該發光二極體單元電性連接於該磁性薄膜，其中該發光二極體單元之設置方式可為覆晶式或水平式，如此能在不影響電壓的情況下，能降低N載子(電子)的移動率，改良不對稱載子流動，如此以增加電子電洞對之複合機率，而提升發光二極體的光輸出功率。另外，該第一電性連接件也能以摻雜該至少一磁性元素，以達成該磁性薄膜之相同目的。 In summary, the present invention is a package structure of a light emitting diode comprising a submount and a light emitting diode unit, the submount being on a surface a first electrical connector and a second electrical connector are disposed on the upper portion, the first electrical connector includes at least one connector and a magnetic film; and the LED unit has a first electrode and a The second electrode is electrically connected to the first electrical connector, and the second electrode is electrically connected to the second electrical connector. In the present invention, the magnetic film is plated on the submount, and the light emitting diode unit is electrically connected to the magnetic film, wherein the light emitting diode unit can be arranged in a flip chip or a horizontal manner. It can reduce the mobility of N carriers (electrons) and improve the flow of asymmetric carriers without affecting the voltage, so as to increase the composite probability of electron holes and improve the light output power of the LEDs. In addition, the first electrical connector can also dope the at least one magnetic element to achieve the same purpose of the magnetic film.
惟以上所述者，僅為本新型一較佳實施例而已，並非用來限定本新型實施之範圍，故舉凡依本新型申請專利範圍所述之形狀、構造、特徵及精神所為之均等變化與修飾，均應包括於本新型之申請專利範圍內。 However, the above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Therefore, the shapes, structures, features, and spirits described in the scope of the present patent application are equally changed. Modifications are intended to be included in the scope of the present patent application.
故本創作實為一具有新穎性、進步性及可供產業上利用者，應符合我國專利法專利申請要件無疑，爰依法提出新型專利申請，祈 鈞局早日賜至准專利，至感為禱。 Therefore, this creation is a novelty, progressive and available for industrial use. It should be in line with the patent application requirements of China's patent law. It is undoubtedly a new type of patent application, and the Prayer Council will grant the patent as soon as possible. .
1‧‧‧發光二極體之封裝結構 1‧‧‧Light-emitting diode package structure
11‧‧‧基座 11‧‧‧Base
111‧‧‧第一電性連接件 111‧‧‧First electrical connector
112‧‧‧第二電性連接件 112‧‧‧Second electrical connector
113‧‧‧連接件 113‧‧‧Connecting parts
12‧‧‧發光二極體單元 12‧‧‧Lighting diode unit
121‧‧‧第一電極 121‧‧‧First electrode
122‧‧‧第二電極 122‧‧‧second electrode
123‧‧‧基板 123‧‧‧Substrate
124‧‧‧N型半導體層 124‧‧‧N type semiconductor layer
125‧‧‧發光層 125‧‧‧Lighting layer
126‧‧‧P型半導體層 126‧‧‧P type semiconductor layer
13‧‧‧磁性薄膜 13‧‧‧ Magnetic film
Claims (29)
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