CN101373763B - Led - Google Patents
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- Publication number
- CN101373763B CN101373763B CN2007102014691A CN200710201469A CN101373763B CN 101373763 B CN101373763 B CN 101373763B CN 2007102014691 A CN2007102014691 A CN 2007102014691A CN 200710201469 A CN200710201469 A CN 200710201469A CN 101373763 B CN101373763 B CN 101373763B
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- light
- emitting diode
- backlight unit
- diode chip
- electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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Abstract
The invention relates to a light emitting diode, which comprises a base, a first electrode and a second electrode with polarity opposite to that of the first electrode. Both the first electrode and the second electrode are installed on the base. The light emitting diode further comprises at least a first light emitting diode chip, at least a second light emitting diode chip and a packaging body. Fluorescent substances are doped in part of the packaging body. The fist chip is used for emitting a light with a first wavelength to excite the fluorescent substance to generate a white light. The second chip is used for emitting a light with a second wavelength to regulate the color temperature of the white light. The range of the second wavelength is 570-670 nanometer. The first light emitting diode chip and the second light emitting diode chip provide electrical energy for the first electrode and the second electrode.
Description
Technical field
The present invention relates to a kind of light-emitting diode.
Background technology
Nowadays, light-emitting diode (Light Emitting Diode, LED) a lot of fields have been widely applied to, how to obtain the direction that the more superior light-emitting diode of performance has become people's research and development, at this, a kind of novel light-emitting diode can be referring to people such as Daniel A.Steigerwald at document IEEE Journal on Selected Topics in QuantumElectronics, Vol.8, No.2, Illumination With Solid StateLighting Technology one literary composition among the March/April 2002.Because light-emitting diode has characteristics such as luminous efficiency height, color rendering be good, to be beneficial to daily life on the street lamp required so it begins to be used in by people.
Yet, the color temperature value of the white light that existing LED source penetrates is higher, it is usually between 4500 ~ 6500K, can allow people feel cold like this and light is dazzling, color rendering also only can reach 80% simultaneously, and such color temperature value and color rendering can't reach people's requirement.Existing light-emitting diode is normally by adding fluorescent material to send white light in LED crystal particle, and the ratio of fluorescent material is promptly fixing after the light-emitting diodes pipe manufacturer is finished, therefore can not in follow-up use, the colour temperature to light-emitting diode regulate, thereby be unfavorable for people's instructions for use.
In view of this, provide the adjustable light-emitting diode of a kind of colour temperature real for necessary.
Summary of the invention
Below will the light-emitting diode that a kind of colour temperature is adjustable be described with embodiment.
A kind of light-emitting diode, it comprises: a pedestal; One first electrode and second electrode opposite with described first polarity of electrode, described first electrode and second electrode are installed on the described pedestal, it is characterized in that: described light-emitting diode also comprises at least one first light-emitting diode chip for backlight unit and at least one second light-emitting diode chip for backlight unit and a packaging body, the part is doped with fluorescent material in the described packaging body, described at least one first chip is used to penetrate the light of first wavelength to excite described fluorescent material generation white light, described at least one second chip is used to penetrate the light of second wavelength to regulate the colour temperature of described white light, the scope of described second wavelength is 570 ~ 670 nanometers, and described at least one first light-emitting diode chip for backlight unit and at least one second light-emitting diode chip for backlight unit provide electric energy by described first electrode and second electrode to it.
With respect to prior art, described light-emitting diode can penetrate white light and wave-length coverage be the light of 570 ~ 670 nanometers, make described light-emitting diode by regulate wave-length coverage be the brightness of light of 570 ~ 670 nanometers realizing regulating the colour temperature of described white light, thereby suitable raising people's comfort level.
Description of drawings
Fig. 1 is the schematic cross-section of first embodiment of the invention light-emitting diode.
Fig. 2 is the schematic cross-section of second embodiment of the invention light-emitting diode.
Fig. 3 is the schematic cross-section of third embodiment of the invention light-emitting diode.
Embodiment
The present invention is described in further detail below in conjunction with accompanying drawing.
See also Fig. 1, the light-emitting diode 10 that first embodiment of the invention provides, it comprises: 14, one second light-emitting diode chip for backlight unit 15 of 13, one first light-emitting diode chip for backlight unit of 12, one second electrodes of 11, one first electrodes of a pedestal and a packaging body 16.
Described first electrode 12 be installed on the described pedestal 11 with described second electrode 13 and polarity opposite.In the present embodiment, described first electrode 12 is anodal, and described second electrode 13 is a negative pole.
Described first light-emitting diode chip for backlight unit 14 is connected with described second light-emitting diode chip for backlight unit 15, and described first light-emitting diode chip for backlight unit 14 and described second light-emitting diode chip for backlight unit 15 provide electric energy by described first electrode 12 and second electrode 13 to it.In the present embodiment, described first light-emitting diode chip for backlight unit 14 is arranged on described first electrode 12, and first utmost point 141 of described first light-emitting diode chip for backlight unit 14 is connected with described first electrode, 12 routings, and described first light-emitting diode chip for backlight unit 14 is used to send the exciting light with first wavelength; Described second light-emitting diode chip for backlight unit 15 is arranged on described second electrode 13, first utmost point 151 of described second light-emitting diode chip for backlight unit 15 is connected with its first utmost point, 141 opposite polarity second utmost point, 142 routings with described first light-emitting diode chip for backlight unit 14, second utmost point 152 of described second light-emitting diode chip for backlight unit 15 directly electrically connects with described second electrode 13, described second light-emitting diode chip for backlight unit 15 is used to penetrate the light of second wavelength, and the scope of described second wavelength is 570 ~ 670 nanometers.
Described first light-emitting diode chip for backlight unit, 14 material therefors are the III-V compounds of group, and for example: aluminum indium gallium nitride (AlInGaN) etc., described second light-emitting diode chip for backlight unit, 15 material therefors are the III-V compounds of group, for example: AlGaInP (AlInGaP).
Be understandable that first light-emitting diode chip for backlight unit 14 that described light-emitting diode 10 is included and the quantity of second light-emitting diode chip for backlight unit 15 are not limited to one, it also can be a plurality of.
Described packaging body 16 comprises the first 161 that is used to seal described first light-emitting diode chip for backlight unit 14, and be used to seal the second portion 162 of described second light-emitting diode chip for backlight unit 15 and described first 161 peripheries, be doped with fluorescent material in the described first 161, the exciting light that described first light-emitting diode chip for backlight unit 14 sends can excite the extremely outside of described packaging body 16 of described fluorescent material generation white light and outgoing.Described fluorescent material can be yttrium-aluminium-garnet (YAG) fluorescent material, terbium aluminium garnet (TAG) fluorescent material, and silicate fluorescent powder, or Nitride phosphor etc.
When described first electrode 12 and second electrode 13 are connected to a driving control unit when (figure does not show), described first light-emitting diode chip for backlight unit 14 and second light-emitting diode chip for backlight unit 15 are serially connected in the electric loop, described driving control unit may command flows through the electric current of described first light-emitting diode chip for backlight unit 14 and second light-emitting diode chip for backlight unit 15 to regulate the brightness of described first light-emitting diode chip for backlight unit 14 and second light-emitting diode chip for backlight unit 15 light that sent, the exciting light that described first light-emitting diode chip for backlight unit 14 is sent can excite described fluorescent material to produce white light, and the direct outgoing of the light of described second wavelength is to the outside of described packaging body 16.At this, described driving control unit can be regulated the brightness of the light of described second wavelength by the electric current that control flows is crossed above-mentioned electric loop, thereby the colour temperature of the white light that can be sent described light-emitting diode 10 is regulated.
See also Fig. 2, the light-emitting diode 20 that second embodiment of the invention provides, the light-emitting diode 10 that itself and above-mentioned first embodiment provide is basic identical, difference is: described light-emitting diode 20 also comprises a diode chip for backlight unit 27, described diode chip for backlight unit 27 and described first light-emitting diode chip for backlight unit, 14 reverse parallel connections, promptly when described first electrode 12 is negative pole for anodal described second electrode 13, the negative pole 271 of described diode chip for backlight unit 27 electrically connects with described first electrode 12, the positive pole 272 of described diode chip for backlight unit 27 electrically connects with described second electrode 13, and described diode chip for backlight unit 27 can prevent effectively that reverse voltage is excessive and damage described first light-emitting diode chip for backlight unit 14.At this, when described first electrode 12 and second electrode 13 are connected to a driving control unit when (figure does not show), described first light-emitting diode chip for backlight unit 14 and second light-emitting diode chip for backlight unit 15 are connected in parallel in the electric loop, described driving control unit can be regulated the brightness of the light of described second wavelength by the electric current that control flows is crossed above-mentioned electric loop, thereby the colour temperature of the white light that can be sent described light-emitting diode 10 is regulated.
See also Fig. 3, the light-emitting diode 30 that third embodiment of the invention provides, it comprises: a pedestal 11, one first electrode 12, second electrode 13 that comprises first branch 131 and second branch 132,14, one second light-emitting diode chip for backlight unit 15 of one first light-emitting diode chip for backlight unit, and a packaging body 16.
Described first light-emitting diode chip for backlight unit 14 provides electric energy by first branch 131 of described first electrode 12 and second electrode 13 to it.In the present embodiment, described first light-emitting diode chip for backlight unit 14 is arranged on described first electrode 12, and first utmost point 141 of described first light-emitting diode chip for backlight unit 14 is connected with described first electrode, 12 routings, being connected with first branch, 131 routings of described second electrode 13 with its first utmost point, 141 opposite polarity second utmost points 142 of described first light-emitting diode chip for backlight unit 14, described first light-emitting diode chip for backlight unit 14 is used to send exciting light.
Described second light-emitting diode chip for backlight unit 15 provides electric energy by second branch 132 of described first electrode 12 and described second electrode 13 to it.In the present embodiment, described second light-emitting diode chip for backlight unit 15 is arranged on described first electrode 12 and is adjacent with described first light-emitting diode chip for backlight unit 14, first utmost point 151 of described second light-emitting diode chip for backlight unit 15 is connected with second branch, 132 routings of described second electrode 13, directly the electrically connecting with described first electrodes 12 with its first utmost point 151 opposite polarity second utmost points 152 of described second light-emitting diode chip for backlight unit 15.
The exciting light that described first light-emitting diode chip for backlight unit 14 sends can excite the fluorescent materials that mix in the first 161 of described packaging body 16 to produce white lights and the outgoing outside to described packaging body 16.At this, described second light-emitting diode chip for backlight unit 15 is covered by the second portion 162 of described packaging body 16, so the light of second wavelength that described second light-emitting diode chip for backlight unit 15 penetrates can be directly through the outside of described second portion 162 outgoing to described packaging body 16.
When first branch 131 of described first electrode 12 and second electrode 13 is connected to one first driving control unit (figure does not show), second branch 132 of described first electrode 12 and second electrode 13 is connected to one second driving control unit when (figure does not show), described first light-emitting diode chip for backlight unit 14 is in first electric loop of being controlled by described first driving control unit, described second light-emitting diode chip for backlight unit 15 is in second electric loop of being controlled by described second driving control unit, described first driving control unit and second driving control unit control flows are respectively crossed the electric current of described first light-emitting diode chip for backlight unit 14 and second light-emitting diode chip for backlight unit 15 to regulate the brightness of described first light-emitting diode chip for backlight unit 14 and second light-emitting diode chip for backlight unit 15 light that sent respectively, the exciting light that described first light-emitting diode chip for backlight unit 14 is sent can excite described fluorescent material to produce white light, and the direct outgoing of light of second wavelength that described second light-emitting diode chip for backlight unit 15 is sent is to the outside of described packaging body 16.At this, second driving control unit can be regulated the brightness of the light of described second wavelength by the electric current that control flows is crossed above-mentioned second electric loop, thereby the colour temperature of the white light that can be sent described light-emitting diode 10 is regulated.
In addition, those skilled in the art also can do other variation in spirit of the present invention, as long as it does not depart from technique effect of the present invention, the variation that these are done according to spirit of the present invention all should be included within the present invention's scope required for protection.
Claims (7)
1. light-emitting diode, it comprises: a pedestal; One first electrode and second electrode opposite with described first polarity of electrode, described first electrode and second electrode are installed on the described pedestal, it is characterized in that: described light-emitting diode also comprises at least one first light-emitting diode chip for backlight unit and at least one second light-emitting diode chip for backlight unit and a packaging body, the part is doped with fluorescent material in the described packaging body, described at least one first light-emitting diode chip for backlight unit is used to penetrate the light of first wavelength to excite described fluorescent material generation white light, described at least one second light-emitting diode chip for backlight unit is used to penetrate the light of second wavelength to regulate the colour temperature of described white light, the scope of described second wavelength is 570 to 670 nanometers, and described at least one first light-emitting diode chip for backlight unit and at least one second light-emitting diode chip for backlight unit provide electric energy by described first electrode and second electrode to it.
2. light-emitting diode as claimed in claim 1 is characterized in that, described at least one first light-emitting diode chip for backlight unit is connected with described at least one second light-emitting diode chip for backlight unit.
3. light-emitting diode as claimed in claim 1 is characterized in that, described light-emitting diode also comprises a diode chip for backlight unit, described diode chip for backlight unit and described at least one first light-emitting diode chip for backlight unit reverse parallel connection.
4. light-emitting diode as claimed in claim 1, it is characterized in that, described at least one first light-emitting diode chip for backlight unit and described at least one second light-emitting diode chip for backlight unit are arranged on described first electrode and adjacent setting, described second electrode comprises first branch and second branch, described at least one first light-emitting diode chip for backlight unit provides electric energy via described first branch and first electrode to it, and described at least one second light-emitting diode chip for backlight unit provides electric energy by described second branch and first electrode to it.
5. light-emitting diode as claimed in claim 1 is characterized in that, described at least one first light-emitting diode chip for backlight unit material therefor is an aluminum indium gallium nitride, and described at least one second light-emitting diode chip for backlight unit material therefor is an AlGaInP.
6. light-emitting diode as claimed in claim 1, it is characterized in that, described packaging body comprises the first that is used to seal described at least one first light-emitting diode chip for backlight unit, and be used to seal the second portion of described at least one second light-emitting diode chip for backlight unit and described first periphery, be doped with described fluorescent material in the described first.
7. light-emitting diode as claimed in claim 1 is characterized in that, described fluorescent material is a yttrium aluminium garnet fluorescent powder, terbium aluminium garnet fluorescent material, silicate fluorescent powder or Nitride phosphor.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007102014691A CN101373763B (en) | 2007-08-24 | 2007-08-24 | Led |
| US12/192,032 US20090050912A1 (en) | 2007-08-24 | 2008-08-14 | Light emitting diode and outdoor illumination device having the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007102014691A CN101373763B (en) | 2007-08-24 | 2007-08-24 | Led |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101373763A CN101373763A (en) | 2009-02-25 |
| CN101373763B true CN101373763B (en) | 2010-11-10 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007102014691A Expired - Fee Related CN101373763B (en) | 2007-08-24 | 2007-08-24 | Led |
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| Country | Link |
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| CN (1) | CN101373763B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016078012A1 (en) * | 2014-11-19 | 2016-05-26 | 史伯梅 | Led light-emitting unit |
| WO2016078013A1 (en) * | 2014-11-19 | 2016-05-26 | 史伯梅 | Led light-emitting unit |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201227920A (en) * | 2010-12-31 | 2012-07-01 | Siliconware Precision Industries Co Ltd | LED package substrate and fabrication method thereof |
| TW201320406A (en) * | 2011-11-11 | 2013-05-16 | Unity Opto Technology Co Ltd | Improved white LED packaging structure for improving light mixing effect |
| CN103617993A (en) * | 2013-11-19 | 2014-03-05 | 安徽科发信息科技有限公司 | Encapsulating method of LED light source adjustable in color temperature, color rendering index and brightness |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2696134Y (en) * | 2004-05-24 | 2005-04-27 | 葛世潮 | Color temp adjustable white-light LED |
| CN1719630A (en) * | 2004-07-08 | 2006-01-11 | 光宝科技股份有限公司 | White light illuminating method and apparatus capable of regulating colour temp. |
| CN1783521A (en) * | 2004-12-01 | 2006-06-07 | 中华映管股份有限公司 | White-light luminous diode |
-
2007
- 2007-08-24 CN CN2007102014691A patent/CN101373763B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2696134Y (en) * | 2004-05-24 | 2005-04-27 | 葛世潮 | Color temp adjustable white-light LED |
| CN1719630A (en) * | 2004-07-08 | 2006-01-11 | 光宝科技股份有限公司 | White light illuminating method and apparatus capable of regulating colour temp. |
| CN1783521A (en) * | 2004-12-01 | 2006-06-07 | 中华映管股份有限公司 | White-light luminous diode |
Non-Patent Citations (2)
| Title |
|---|
| JP特开2001-156341A 2001.06.08 |
| JP特开2005-285920A 2005.10.13 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016078012A1 (en) * | 2014-11-19 | 2016-05-26 | 史伯梅 | Led light-emitting unit |
| WO2016078013A1 (en) * | 2014-11-19 | 2016-05-26 | 史伯梅 | Led light-emitting unit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101373763A (en) | 2009-02-25 |
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