CN104425664B - Has the optoelectronic semiconductor component of barrier layer - Google Patents
Has the optoelectronic semiconductor component of barrier layer Download PDFInfo
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- CN104425664B CN104425664B CN201310404407.6A CN201310404407A CN104425664B CN 104425664 B CN104425664 B CN 104425664B CN 201310404407 A CN201310404407 A CN 201310404407A CN 104425664 B CN104425664 B CN 104425664B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 158
- 230000004888 barrier function Effects 0.000 title claims abstract description 34
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 31
- 239000002019 doping agent Substances 0.000 claims abstract description 57
- 230000005641 tunneling Effects 0.000 claims description 45
- 238000003475 lamination Methods 0.000 claims description 24
- 239000011777 magnesium Substances 0.000 claims description 15
- 230000007423 decrease Effects 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 10
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 9
- 230000003760 hair shine Effects 0.000 claims description 8
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 7
- 229910052749 magnesium Inorganic materials 0.000 claims description 7
- 229910052787 antimony Inorganic materials 0.000 claims description 5
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 5
- 230000003247 decreasing effect Effects 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 229910052714 tellurium Inorganic materials 0.000 claims description 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims 2
- 239000010410 layer Substances 0.000 description 129
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 239000004411 aluminium Substances 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 5
- 229910052733 gallium Inorganic materials 0.000 description 5
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- -1 AlGaInP) serial Chemical compound 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 230000002146 bilateral effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The present invention discloses a kind of optoelectronic semiconductor component, comprising：One barrier layer；One first semiconductor layer is located on barrier layer, and the first semiconductor layer includes one first dopant and one second dopant；And one second semiconductor layer be located under barrier layer include the second dopant, wherein in the first semiconductor layer, the concentration of first dopant is more than the concentration of the second dopant, and concentration of second dopant in the second semiconductor layer is more than the concentration in the first semiconductor layer.
Description
Technical field
The present invention relates to a kind of structures of optoelectronic semiconductor component.
Background technology
Optoelectronic semiconductor component, such as light emitting diode (LED), under brightness is constantly promoted in recent years, application field
It has expanded to the light source of all kinds of devices from traditional indicator light or decorative use or even in the near future, it is most likely that substitution
Traditional fluorescent lamp becomes the light source of lighting area of new generation.
Existing light emitting diode (LED) structure is single p-n junction structure, as shown in Figure 1, its basic structure includes one
On the substrate 13, a p-type semiconductor layer 12 is in n-type semiconductor layer 11 and one shines for substrate 13, a n-type semiconductor layer 11
Layer 10 is between p-type semiconductor layer 12 and n-type semiconductor layer 11.
In order to improve the luminous quantity in light emitting diode (LED) per unit area, as shown in Fig. 2, one shines with multilayer
First p-n junction structure I and the second p-n junction structure I I are passed through a tunneling layer 17 by light emitting diode (LED) structure of lamination
It is together in series, thus in identical unit area, the luminous quantity of per unit area will be promoted, while driving voltage can become
For twice, but driving current can't increase.This high voltage, the characteristic of low current help to be applied to illuminating product.It is existing
Tunneling layer 17 for high-concentration dopant n+ semiconductor layers and p+ semiconductor layers form, due to the n+ semiconductor layers of high-concentration dopant
And p+ semiconductor layers are poor for the penetrance of light, so usually tunneling layer 17 must be very thin to improve the penetrance of light, still
Tunneling layer 17 is too thin, and easily incorporation affects tunneling layer 17 from the dopant that other semiconductor layers are spread in manufacture craft
Function.
The content of the invention
To solve the above problems, the present invention provides a kind of optoelectronic semiconductor component, comprising：One barrier layer；One the first half leads
Body layer is located on barrier layer, and the first semiconductor layer includes one first dopant and one second dopant；And one second
Semiconductor layer is located under barrier layer comprising the second dopant, wherein in the first semiconductor layer, the first dopant it is dense
Degree is more than the concentration of the second dopant, and concentration of second dopant in the second semiconductor layer is more than in the first semiconductor layer
Concentration.
Description of the drawings
Fig. 1 is existing light emitting diode (LED) structure diagram；
Fig. 2 is light emitting diode (LED) structure diagram of the existing lamination that shines with multilayer；
Fig. 3 is the structure diagram according to first embodiment of the invention；
Fig. 4 A~Fig. 4 B are aluminium (Al) content ratio figure according to first embodiment of the invention；
Fig. 5 A~Fig. 5 B are band gap (Ec-Ev) schematic diagram according to first embodiment of the invention；
Fig. 6 is the structure diagram according to another embodiment of the present invention.
Symbol description
1 first is semiconductor laminated
10 first luminescent layers
11 first n-type semiconductor layers
12 first p-type semiconductor layers
13 substrates
2 second is semiconductor laminated
21 second p-type semiconductor layers
22 second n-type semiconductor layers
23 second luminescent layers
3 tunneling laminations
31 first electrical tunneling layers
32 second electrical tunneling layers
4 barrier layers
51 first electrodes
52 second electrodes
53 surfaces
54 surfaces
Specific embodiment
First embodiment
Fig. 3 is the structure diagram according to first embodiment of the invention.Disclosed optoelectronic semiconductor component according to the present invention
For a pair of p-n junction structure, it is located at comprising one first semiconductor laminated 1 and one second semiconductor laminated 2 on a substrate 13, wherein
First semiconductor laminated 1 is located on second semiconductor laminated 2, and a tunneling lamination 3 is located at first semiconductor laminated 1 and the second half leads
Between body lamination 2, for a barrier layer 4 between tunneling lamination 3 and second semiconductor laminated 2, a first electrode 51 is arranged on
53 and one second electrode 52 of surface of semiconductor lamination 1 is arranged on the surface 54 of substrate 13, first electrode 51 and second
Electrode 52 passes through first semiconductor laminated 1 and second semiconductor laminated 2 for steering current.
Substrate 13 be electrically-conductive backing plate, material include silicon (Si), GaAs (GaAs), carborundum (SiC), zinc oxide (ZnO),
Gallium nitride (GaN), one kind of aluminium nitride (AlN) or metal material or its combination.
First semiconductor laminated 1, second semiconductor laminated 2, tunneling lamination 3 and barrier layer 4 can be grown up by extensional mode
On the substrate 13 or by aligning sticking method, bonded in a manner of heating, pressurizeing with substrate 13.
First semiconductor laminated 1, which includes at least one first n-type semiconductor layer 11, has the first conductive type state, and one first shines
10 and one first p-type semiconductor layer 12 of layer has the second conductive type state；Second semiconductor laminated 2 includes at least one second n-type
Semiconductor layer 22 has the first conductive type state, and one second luminescent layer 23 and one second p-type semiconductor layer 21 have the second conduction
Kenel；First semiconductor laminated 1 and second semiconductor laminated 2 sequentially epitaxial growth on substrate 13.First n-type semiconductor layer
11st, the first p-type semiconductor layer 12, the second n-type semiconductor layer 22 and the second p-type semiconductor layer 21 can be two single layer structures or two
A multilayered structure (multilayered structure refers to two layers or more than two layers).First n-type semiconductor layer 11 and the first p-type semiconductor layer 12 have
Different conductivity, electrically, polarity or according to the element of doping to provide electronics or hole；Second n-type semiconductor layer 22 and
Two p-type semiconductor layers 21 also have different conductivities, electrically, polarity or according to the element of doping to provide electronics or hole.
First luminescent layer 10 is formed between the first n-type semiconductor layer 11 and the first p-type semiconductor layer 12, and the second luminescent layer 23 is formed in
Between second n-type semiconductor layer 22 and the second p-type semiconductor layer 21, the first luminescent layer 10 and the second luminescent layer 23 are to turn electric energy
Change luminous energy into.Pass through wherein one or more layers the physics and chemistry of change first semiconductor laminated 1 and second semiconductor laminated 2
Composition, adjusts the optical wavelength sent.Common material is AlGaInP (aluminum gallium indium
Phosphide, AlGaInP) serial, aluminum indium gallium nitride (aluminum gallium indium nitride, AlGaInN) system
Row, zinc oxide are serial (zinc oxide, ZnO).First luminescent layer 10 and the second luminescent layer 23 can be single heterojunction structure (single
Heterostructure, SH), double-heterostructure (double heterostructure, DH), bilateral double heterojunction
(double-side double heterostructure, DDH), multi layer quantum well (multi-quantum well, MWQ).
Specifically, the first luminescent layer 10 and the second luminescent layer 23 can be semiconductor neutral, that p-type or n-type are electrical.Electric current is imposed to pass through
When first semiconductor laminated 1 and second semiconductor laminated 2, the first luminescent layer 10 and the second luminescent layer 23 can shine, wherein first
The light that luminescent layer is sent has first wave length, and the light that the second luminescent layer is sent has second wave length, first wave length and second
Wavelength difference is less than 20nm.When the material of the first luminescent layer 10 and the second luminescent layer 23 based on AlGaInP (AlGaInP)
During material, the light of red, orange, yellow light amber colour system can be sent, wherein first wave length and second wave length between 600nm~620nm it
Between；When the material based on aluminum indium gallium nitride (AlGaInN), blue or green light can be sent.In the present embodiment, the first semiconductor
The material of lamination 1 and second semiconductor laminated 2 for AlGaInP (aluminum gallium indium phosphide,
AlGaInP) series, the first p-type semiconductor layer 12 and the second p-type semiconductor layer 21 magnesium-doped (Mg) or zinc (Zn) element, wherein
Magnesium (Mg) or zinc (Zn) element are more than 10 in the concentration of the first p-type semiconductor layer 12 and the second p-type semiconductor layer 2117cm-3(/
cm3), it is preferred that between 3*1017~5*1017cm-3Between；First n-type semiconductor layer 11 and the second n-type semiconductor layer 22 are mixed
Miscellaneous silicon (Si) element, wherein silicon (Si) element the concentration of the first n-type semiconductor layer 11 and the second n-type semiconductor layer 22 between
1017~1018cm-3Between, it is preferred that between 4*1017~6*1017cm-3Between.
There is a tunneling lamination 3 between first semiconductor laminated 1 and second semiconductor laminated 2.Tunneling lamination 3 can make electric current
It is passed through by tunneling effect (tunneling effect), electric current is made to flow through the first semiconductor laminated 1 and second semiconductor simultaneously
Lamination 2, material include more than one element and are selected from gallium (Ga), aluminium (Al), indium (In), phosphorus (P), arsenic (As), nitrogen (N), zinc
(Zn), the group that cadmium (Cd) is formed with selenium (Se).Tunneling lamination 3 is electrically worn comprising one first electrical tunneling layer 31 and 1 second
Tunnel layer 32, wherein, the first electrical tunneling layer 31 is close to the polarity and the 2nd p of the second semiconductor laminated 2, first electrical tunneling layer 31
Type semiconductor layer 21 is identical, and in the present embodiment, the first electrical 31 and second p-type semiconductor layer 21 of tunneling layer is all p-type semiconductor,
First electrical tunneling layer 31 be comprising aluminium (Al), gallium (Ga), arsenic (As) compound, and with the first dopant and second doping
Object, wherein the first dopant is carbon (C), the concentration of the first dopant is between 1019~1021cm-3, it is preferred that between 1019~5*
1020cm-3, the second dopant is magnesium (Mg) or zinc (Zn), and the concentration of the second dopant is less than 1018cm-3, it is preferred that it is less than
1017cm-3, the concentration of the first dopant is 10 times of the second concentration of dopant, it is preferred that more than 100 times or more.First electrically
The first dopant in tunneling layer 31, such as carbon (C) are a deliberately dopants, and the first electrical tunneling layer 31 is made to form a tool
There is the p-type semiconductor of high-concentration dopant；The second dopant in first electrical tunneling layer 31, such as magnesium (Mg) or zinc (Zn) are
One non-deliberately dopant, spreads during extension from the second p-type semiconductor layer 21.Second electrical tunneling layer 32 is close
First semiconductor laminated 1, the polarity of the second electrical tunneling layer 32 is identical with the first n-type semiconductor layer 11, in the present embodiment, second
Electrical 32 and first n-type semiconductor layer 11 of tunneling layer is all n-type semiconductor, and the second electrical tunneling layer 32 is to include indium (In), gallium
(Ga), the compound of phosphorus (P), and tellurium (Te) is adulterated, wherein the concentration of tellurium (Te) is between 1019~1021cm-3, it is preferred that between
1019~2*1020cm-3。
Barrier layer 4 between the second p-type semiconductor layer 21 and the first electrical tunneling layer 31 is to include aluminium (Al), gallium
(Ga), the compound Al of indium (In) and phosphorus (P)xGa1-xThe scope of InP, wherein x can be between 0.05~0.95, it is preferred that between
0.2~0.7, x are passed from barrier layer 4 close to the part of the second p-type semiconductor layer 21 to the part close to the first electrical tunneling layer 31
Subtract, the mode successively decreased includes linear decrease or stepped successively decreases.Therefore, aluminium (Al) concentration profile as shown in fig. 4 a and fig. 4b,
In barrier layer 4, aluminium (Al) is about 35% in the moiety content ratio close to the second p-type semiconductor layer 21, with linear decrease (figure
4A) or the stepped mode for successively decreasing (Fig. 4 B), until its content ratio of part close to the first electrical tunneling layer 31 is about 10%.
Due to the first epitaxial growth of barrier layer 4 on second semiconductor laminated 2 after, tunneling lamination 3 continues epitaxial growth on barrier layer 4,
In epitaxial growth process, barrier layer 4 can reduce the element adulterated in second semiconductor laminated 2, such as magnesium (Mg) or zinc (Zn),
It diffuses in the first electrical tunneling layer 31.If barrier layer free 4 is formed in the second p-type semiconductor layer 21 and the first electrical tunneling layer 31
Between, in the epitaxial process of the first electrical tunneling layer 31, the second dopant of the second p-type semiconductor layer 21, such as magnesium (Mg)
Or zinc (Zn), it will diffuse in large quantities in the first electrical tunneling layer 31, make the second dopant of the first electrical tunneling layer 31
Concentration improves, when the concentration of the second dopant is more than 1018cm-3More than, the resistance for causing the first electrical tunneling layer 31 is promoted,
So that operating voltage (the V of optoelectronic semiconductor componentf) improve, efficiency is caused to decline.
Due in barrier layer 4, the concentration of aluminium (Al) is about in the moiety content ratio close to the second p-type semiconductor layer 21
35%, linear decrease or it is stepped successively decrease until close to the first electrical tunneling layer 31 part when, content ratio is about 10%, such as
Shown in Fig. 5 A and Fig. 5 B so that band gap (Ec-Ev) declines (Fig. 5 A) or rank from the partial linear of the second p-type semiconductor layer 21
Scalariform successively decreases (Fig. 5 B) to the first electrical tunneling layer 31, and the linear or stepped of this band gap (Ec-Ev) gradually changes, can keep away
Exempt from electronics to be blocked in transmission process, to reduce operating voltage (Vf)。
Second embodiment
Second embodiment is that barrier layer 4 is comprising aluminium (Al), gallium (Ga), indium (In) or phosphorus with first embodiment difference
(P) compound, such as AlxGa1-xThe scope of InP, wherein x can be between 0.05~0.95, it is preferred that between 0.2~0.7,
And antimony dopant (Sb), wherein the concentration of antimony (Sb) is between 1017~1018cm-3Between.During extension, since barrier layer 4 is mixed
Miscellaneous antimony (Sb), can inhibit the element adulterated in second semiconductor laminated 2, such as magnesium (Mg) or zinc (Zn), diffuse to first
It in electrical tunneling layer 31, avoids in the first electrical tunneling layer 31, the concentration of the second dopant is more than 1018cm-3, it is preferred that
Avoid exceeding 1017cm-3。
Fig. 6 is the structure diagram according to another embodiment of the present invention.One bulb lamp 600 includes a lampshade 602, a lens
604th, a light emitting module 610, a lamp holder 612, a cooling fin 614, a connecting portion 616 and an electrical connecting element.Light emitting module
610 comprising the optoelectronic semiconductor component 608 described in a supporting part 606 and multiple previous embodiments on supporting part 606.
Each embodiment cited by the present invention is only to illustrate the present invention, is not used to limit the scope of the present invention.It is any
People's any modification apparent easy to know made for the present invention or change all do not depart from spirit and scope of the invention.
Claims (22)
1. a kind of optoelectronic semiconductor component, comprising：
Barrier layer；
First semiconductor layer, on the barrier layer, which includes the first dopant and the second dopant
Matter；
Second semiconductor layer includes second dopant under the barrier layer；
First luminous lamination, comprising the first luminescent layer, on first semiconductor layer；
Second shines lamination, comprising the second luminescent layer, under the barrier layer, and this second shine lamination include this second half
Conductor layer, second semiconductor layer are located between second luminescent layer and the barrier layer；And
Tunneling lamination, positioned at this first shine between lamination and the barrier layer, and the tunneling lamination include first semiconductor layer,
Wherein in first semiconductor layer, the concentration of first dopant is more than the concentration of second dopant, and this
Concentration of two dopants in second semiconductor layer is more than the concentration in first semiconductor layer,
Wherein this first shines lamination also comprising the first p-type semiconductor layer, on first luminescent layer and the first n-type half
Conductor layer, under first luminescent layer；This second shines lamination also comprising the second n-type semiconductor, second shines positioned at this
Under layer, wherein second semiconductor layer is a p-type semiconductor；The tunneling lamination also comprising the 3rd semiconductor layer, positioned at this
Between semi-conductor layer and the first luminous lamination.
2. optoelectronic semiconductor component as described in claim 1, wherein first dopant are dense in the first semiconductor layer
Degree is more than 10 times of the concentration of second semiconductor layer in the first semiconductor layer or more.
3. optoelectronic semiconductor component as claimed in claim 2, wherein first dopant include carbon (C).
4. optoelectronic semiconductor component as described in claim 1, wherein second dopant are dense in the first semiconductor layer
Degree is less than 1018cm-3。
5. optoelectronic semiconductor component as claimed in claim 4, wherein second dopant include magnesium (Mg) or zinc (Zn).
6. optoelectronic semiconductor component as described in claim 1, the wherein barrier layer include AlGaInP (AlxGa1-xInP),
And x scopes are 0.2≤x≤0.7.
7. optoelectronic semiconductor component as claimed in claim 6, wherein x are from the barrier layer close to the part of second semiconductor layer
Successively decrease to the part close to first semiconductor layer.
8. the decreasing fashion of optoelectronic semiconductor component as claimed in claim 7, wherein x is linear decrease.
9. the decreasing fashion of optoelectronic semiconductor component as claimed in claim 7, wherein x successively decreases to be stepped.
10. optoelectronic semiconductor component as described in claim 1, the wherein barrier layer include antimony (Sb), and the concentration of antimony (Sb)
Between 1017~1018cm-3Between.
11. optoelectronic semiconductor component as described in claim 1, wherein the 3rd semiconductor layer include the 3rd dopant, with this
Second dopant is different.
12. optoelectronic semiconductor component as claimed in claim 11, wherein the 3rd dopant include tellurium (Te), and the 3rd
The concentration of dopant is more than 1019cm-3。
13. optoelectronic semiconductor component as described in claim 1, also comprising substrate, led positioned at the first semiconductor layer or the second half
Body layer side.
14. optoelectronic semiconductor component as described in claim 1, the light that wherein first luminescent layer is sent has first wave
Long, the light which is sent has second wave length, which is less than 20nm with the second wave length difference.
15. optoelectronic semiconductor component as claimed in claim 14, the wherein first wave length and the second wave length between 600nm~
Between 620nm.
16. optoelectronic semiconductor component as described in claim 1, the wherein concentration of first dopant are second dopant
10 times or more.
17. optoelectronic semiconductor component as described in claim 1, the wherein barrier layer include group iii elements, the group iii elements
Ratio of components is decremented to close to the part of second semiconductor layer close to the part of first semiconductor layer from the barrier layer.
18. optoelectronic semiconductor component as described in claim 1, wherein first dopant are same lead with second dopant
Electrical dopant.
19. the energy rank of optoelectronic semiconductor component as described in claim 1, the wherein barrier layer is from close to second semiconductor layer
Part successively decrease to close to the part of first semiconductor layer.
20. the energy rank of optoelectronic semiconductor component as claimed in claim 19, the wherein barrier layer is close to second semiconductor layer
Be partially interposed between 2.3eV~2.5eV, be partially interposed in close to first semiconductor layer between 1.9eV~2.1eV.
21. first dopant in optoelectronic semiconductor component as described in claim 1, wherein first semiconductor layer is
One deliberately dopant, second dopant are a non-deliberately dopant.
22. second dopant in optoelectronic semiconductor component as claimed in claim 21, wherein second semiconductor layer
For a deliberately dopant.
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| US5740192A (en) * | 1994-12-19 | 1998-04-14 | Kabushiki Kaisha Toshiba | Semiconductor laser |
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|---|---|---|---|---|
| US5740192A (en) * | 1994-12-19 | 1998-04-14 | Kabushiki Kaisha Toshiba | Semiconductor laser |
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