TWM524561U - Light emitting device - Google Patents

Description

Illuminating device

The present invention relates to a light-emitting device, and more particularly to a light-emitting device in which a light field type tends to be symmetrical.

With the evolution of the times, the means of illumination evolved from light sources such as torches, oil lamps and candles that use light-burning articles as light sources to incandescent light bulbs, fluorescent tubes, power-saving bulbs, and light-emitting diodes that emit light. Among them, the light-emitting diode-shaped light-emitting device has a small volume and low power consumption, so many related companies are now investing in related fields.

In a light-emitting device of a light-emitting diode, light-emitting semiconductor layers between different types of semiconductor layers emit light by energizing different types of semiconductor layers of the light-emitting chip. In the structure of the existing light-emitting device, the first type of semiconductor layer is disposed on the substrate, and the second type of semiconductor layer is offset on one side of the first type of semiconductor layer, and the light-emitting semiconductor layer interposed therebetween The second type of semiconductor layer is biased to one side of the first type of semiconductor layer. The two electrodes respectively cover the two sides of the light emitting chip to be electrically connected to the first type of semiconductor layer and the second type of semiconductor layer, respectively.

However, such a light-emitting device has an asymmetrical optical field pattern due to the asymmetrical nature of the structure of the light-emitting chip.

In view of the above problems, the present invention proposes a light-emitting device in which the light field pattern of the emitted light can be symmetrical.

The present invention provides a light emitting device including a substrate, a first semiconductor layer, a second semiconductor layer, a first electrode, and a second electrode. The first semiconductor layer is disposed on the substrate. The first semiconductor layer includes a connected body portion and a peripheral portion, and the body portion protrudes from the surrounding portion. The surrounding portion surrounds the body portion in a mirror symmetrical manner. The second semiconductor layer is disposed on the body portion, and the second semiconductor layer pattern is substantially the same as the body portion. The first electrode is at least partially disposed on the peripheral portion and electrically connected to the first semiconductor layer. The second electrode is at least partially disposed on the second semiconductor layer and electrically connected to the second semiconductor layer.

According to the light-emitting device of the present invention, the shape of the first semiconductor layer and the second semiconductor layer are symmetrically arranged, so that the light generated by the light-emitting junction formed between the first semiconductor layer and the second semiconductor layer can be It tends to be symmetrical. In addition, by projecting the surrounding portion of the body portion, at least part of the light ray diverging along the lateral direction of the illuminating junction can be separated from the substrate by reflection of the first electrode located at the surrounding portion, thereby facilitating the application of the light. The light extraction rate of the light-emitting device can be improved.

The above description of the present invention and the following description of the embodiments are intended to illustrate and explain the spirit and principles of the present invention, and to provide further explanation of the scope of the present patent application.

The detailed features and advantages of the present invention are described in detail in the following detailed description of the embodiments of the present invention. And the drawings, any one of ordinary skill in the art can readily understand the related objects and advantages of the present invention. The following examples are intended to describe the present invention in further detail, but do not limit the scope of the present invention in any way. In addition, the component ratios in the drawings are merely illustrative for the purpose of illustration and are not intended to limit the scope of the present invention.

1A, FIG. 1B and FIG. 1C, FIG. 1A is a top plan view of a light-emitting device 100 according to an embodiment of the present invention, and FIG. 1B is a side cross-sectional view of the light-emitting device 100 of FIG. 1A along a BB cross-section. 1C is a side cross-sectional view of the light emitting device 100 of FIG. 1A taken along the CC section.

In the embodiment, the light emitting device 100 includes a substrate 110, a first semiconductor layer 121, a second semiconductor layer 122, an insulating layer 130, a first electrode 141, and a second electrode 142. The substrate 110 has a first surface S1 and may be a conductor or a non-conductor. The first semiconductor layer 121 is disposed on the first surface S1 of the substrate 110 such that the first surface S1 abuts the first semiconductor layer 121.

The first semiconductor layer 121 includes a connected body portion 1211 and a peripheral portion 1212. The peripheral portion 1212 of the first semiconductor layer 121 is formed around the body portion 1211 of the first semiconductor layer 121, and the body portion 1211 protrudes from the peripheral portion 1212. That is, the height of the body portion 1211 relative to the substrate 110 is greater than the height of the peripheral portion 1212 relative to the substrate 110. The main body portion 1211 of the first semiconductor layer 121 may have a square shape in plan view, but is not limited thereto, and may be a rectangle or a number of other sides. The peripheral portion 1212 of the first semiconductor layer 121 has a peripheral portion upper surface 1212a facing away from the substrate 110 and a peripheral side surface 1212b located at a periphery of the peripheral portion 1212 of the first semiconductor layer 121.

The peripheral portion 1212 of the first semiconductor layer 121 surrounds the body portion 1211 of the first semiconductor layer 121 in a mirror-symmetrical manner. Taking FIG. 1A as an example, the body portion 1211 of the first semiconductor layer 121 has a shape center P0 corresponding to a plan view. The first axis L1 is parallel to the X-axis direction and passes through the shape center P0. The first axis L1 intersects the peripheral portion side surface 1212b at the first point P1 and the second point P2. The distance from the shape center P0 to the first point P1 is D1, and the distance from the shape center P0 to the second point P2 is D2, where D1 = D2.

In the other direction, the second axis L2 is not parallel to the first axis L1. The second axis is, for example, parallel to the Y-axis direction and passes through the shape center P0. The second axis L2 intersects the peripheral portion side surface 1212b at the third point P3 and the fourth point P4. The distance from the shape center P0 to the third point P3 is D3, and the distance from the shape center P0 to the fourth point P4 is D4, where D3 = D4. Therefore, the peripheral portion 1212 may be mirror symmetrical with respect to a plane of symmetry passing through the shape center P0 and parallel to the XZ plane. The symmetry plane of the peripheral portion 1212 with respect to the center of the shape P0 and parallel to the YZ plane may also be mirror symmetrical.

The peripheral portion upper surface 1212a of the first semiconductor layer 121 is inclined to the first surface S1 of the substrate 110. The distance D5 from the position of the peripheral portion upper surface 1212a close to the body portion 1211 to the first surface S1 of the substrate 110 is smaller than the distance D6 from the periphery of the peripheral portion upper surface 1212a to the first surface S1 of the substrate 110.

The second semiconductor layer 122 is disposed on the body portion 1211, and the pattern of the second semiconductor layer 122 is substantially the same as the pattern of the body portion 1211. The second semiconductor layer 122 has a second surface S2 that abuts the body portion 1211 of the first semiconductor layer 121. In detail, the second surface S2 of the second semiconductor layer 122 is located at the interface between the first semiconductor layer 121 and the second semiconductor layer 122. The first semiconductor layer 121 may be one of an n-type semiconductor and a p-type semiconductor, and the second semiconductor layer 122 may be the other of them. The second surface S2 between the body portion 1211 of the first semiconductor layer 121 and the second semiconductor layer 122 may form a p-n junction as a light-emitting junction. The peripheral upper surface 1212a has an included angle θ with the second surface S2, and the included angle θ may range from 45° ≦ θ ≦ 70°. The second surface S2 may be substantially parallel to the first surface S1 of the substrate 110.

The insulating layer 130 covers a portion of the first semiconductor layer 121. In detail, in the present embodiment, the insulating layer 130 may cover the surface of the body portion 1211 where the second semiconductor layer 122 is not formed, and cover the peripheral portion upper surface 1212a and the peripheral portion side surface 1212b of the peripheral portion 1212. The insulating layer 130 also covers the second semiconductor layer 122, and the insulating layer 130 has an opening 131 to expose a portion of the second semiconductor layer 122, that is, expose an upper surface S2' of a portion of the second semiconductor layer 122, wherein the upper portion of the second semiconductor layer 122 The surface S2' corresponds to the second surface S2 of the second semiconductor 122. In other words, the second surface S2 is on the opposite side of the upper surface S2'. The material of the insulating layer 130 may be a light penetrating insulating material.

One of the first electrodes 141 is partially disposed on the peripheral portion 1212 not covered by the insulating layer 130, and is electrically connected to the peripheral portion 1212. This portion of the first electrode 141 may be disposed on the peripheral portion upper surface 1212a and the peripheral portion side surface 1212b. The insulating layer 130 interrupts the first electrode 141 such that the first electrode 141 does not completely surround the first semiconductor layer 121. That is, the first electrode 141 partially covers the first semiconductor layer 121. The other portion of the first electrode 141 may extend onto the substrate 110, and the present invention is not limited thereto. The first electrode 141 has a third surface S3 and a fourth surface S4 at a portion of the peripheral portion upper surface 1212a. The third surface S3 is adjacent to the first semiconductor layer 121. The fourth surface S4 is located on the opposite side of the third surface S3. The maximum distance D7 of the fourth surface S4 of the first electrode 141 to the first surface S1 of the substrate 110 is smaller than the distance D8 of the second surface S2 of the second semiconductor layer 122 to the first surface S1 of the substrate 110. The material of the first electrode 141 may be a light reflective conductive material.

A portion of the second electrode 142 is disposed on the second semiconductor layer 122 and electrically connected to the second semiconductor layer 122 via the opening 131. Other portions of the second electrode 142 may be disposed on the insulating layer 130 and may extend onto the substrate 110. The first semiconductor layer 121 and the second electrode 142 may be electrically insulated by the insulating layer 130. The material of the second electrode 142 may be a light transmissive conductive material.

When the first electrode 141 and the second electrode 142 are biased to the first semiconductor layer 121 and the second semiconductor layer 122, respectively, the light-emitting junction between the first semiconductor layer 121 and the second semiconductor layer 122 emits light. Since the shapes of the first semiconductor layer 121 and the second semiconductor layer 122 are symmetrical, the light emitted by the light-emitting junctions tends to be symmetrical. In addition, in the light emitted by the light-emitting junction, except that the light diverging in the direction away from the substrate 110 can be directly used by the user, at least part of the light diverging along the lateral direction of the light-emitting junction can pass through the upper surface of the surrounding portion. The first electrode 141 of 1212a is reflected away from the substrate 110 for use by the user. Thereby, the light extraction rate of the light-emitting device 100 can be improved.

2A to FIG. 8A, FIG. 2B to FIG. 8B and FIG. 2C to FIG. 8C, FIG. 2A to FIG. 8A are schematic diagrams showing a planar view of the light-emitting device 100 of FIG. 1A, and FIG. 2B to FIG. 8A is a schematic side view of the manufacturing of the light-emitting device 100 along the BB section, and FIGS. 2C to 8C are schematic side views of the manufacturing of the light-emitting device 100 along the CC section of FIGS. 2A to 8A.

As shown in FIGS. 2A, 2B, and 2C, a semiconductor element 1200 is provided on the substrate 110. The semiconductor device 1200 can be obtained by wafer dicing of semiconductor wafers in which the first semiconductor layer 1210 and the second semiconductor layer 1220 are sequentially stacked. Therefore, the semiconductor device 1200 may further include a first semiconductor layer 1210 and a second semiconductor layer 1220 stacked in sequence. The first semiconductor layer 1210 is closer to the substrate 110 than the second semiconductor layer 1220.

As shown in FIG. 3A, FIG. 3B and FIG. 3C or as shown in FIGS. 4A, 4B and 4C, a photoresist for forming the resist layer 150 is provided on the second semiconductor layer 1220. The user can use the mask 161 or the mask 162 and the light of a specific wavelength to pattern the photoresist material to form the resist layer 150 having the specified pattern. The pattern of the mask 161 and the mask 162 may be mirror symmetrical. In the case of FIGS. 3A, 3B, and 3C, a positive photoresist material may be uniformly disposed on the second semiconductor layer 1220. The mask 161 is disposed at a central portion R1 at a position where the body portion 1211 of the first semiconductor layer 121 of FIG. 1B is expected to be disposed so as to be shielded from light, and the peripheral portion 1212 of the first semiconductor layer 121 of FIG. 1B is expected to be formed in the peripheral portion R2. The position is configured to allow partial light to pass. The mask 161 is in a gradation configuration in the peripheral portion R2, wherein the closer the mask 161 of the peripheral portion R2 is to the central portion R1, the more light is allowed to pass, and the mask 161 of the peripheral portion R2 is further away from the central portion R1. The less light passes.

Therefore, after the mask 161 is placed over the photoresist material and irradiated with light of a specific wavelength, the light-shielding photoresist material can be retained on the second semiconductor layer 1220, and the photoresist material that is exposed to more light remains in the first The thinner the thickness of the second semiconductor layer 1220, the thicker the photoresist which is less irradiated with light remains on the second semiconductor layer 1220. Therefore, in the resist layer 150 formed of the photoresist material, the thickness corresponding to the central portion R1 is the thickest, and the thickness of the peripheral portion R2 which is closer to the central portion R1 is the thinnest, corresponding to the thickness of the peripheral portion R2 from the thickness of the central portion R1. It gradually thickens. The corrosion resistance of the resist layer 150 is stronger as the thickness is thicker, and the thinner the thickness, the weaker.

In addition, in the case of FIGS. 4A, 4B, and 4C, the negative photoresist material may be uniformly disposed on the second semiconductor layer 1220. The mask 162 is disposed at the central portion R1, that is, the body portion 1211 of the first semiconductor layer 121 of FIG. 1B is expected to be disposed so as not to block the light, so that the most light can pass, and the surrounding portion R2 is expected to form the first portion of FIG. 1B. The peripheral portion 1212 of the semiconductor layer 121 is positioned to allow a portion of the light to pass therethrough. The mask 161 is in a gradation configuration in the peripheral portion R2, wherein the closer the mask 161 of the peripheral portion R2 is to the central portion R1, the less light is allowed to pass, and the mask 161 at the peripheral portion R2 is further away from the central portion R1. The more light passes through.

Therefore, after the mask 162 is placed over the photoresist material and irradiated with light of a specific wavelength, the photoresist material irradiated with sufficient light can be retained on the second semiconductor layer 1220, and the photoresist is retained by the less light. The thinner the thickness on the second semiconductor layer 1220, the thicker the photoresist is exposed to the second semiconductor layer 1220. Therefore, similarly to FIG. 3B and FIG. 3C, in the resist layer 150 formed of the photoresist material, the thickness corresponding to the central portion R1 is the thickest, and the thickness of the peripheral portion R2 corresponding to the central portion R1 is the thinnest, corresponding to the periphery. The portion R2 is gradually thicker as it goes away from the thickness of the central portion R1. The corrosion resistance of the resist layer 150 is stronger as the thickness is thicker, and the thinner the thickness, the weaker.

As shown in FIGS. 5A, 5B, and 5C, the semiconductor device 1200 of FIGS. 2A, 2B, and 2C is etched by the difference in resist resistance of the resist layer 150 to be processed to have the present embodiment. The first semiconductor layer 121 and the second semiconductor layer 122 are shaped, and the remaining resist layer 150 shown in FIGS. 3B and 3C or 4B and 4C is removed. In the first semiconductor layer 121 and the second semiconductor layer 122 which are etched, the thickness of the semiconductor material corresponding to the central portion R1 is the thickest, and the thickness of the semiconductor material corresponding to the central portion R1 corresponding to the peripheral portion R2 is the thinnest, corresponding to the periphery. The thickness of the semiconductor material in which the portion R2 is farther away from the central portion R1 is gradually thickened.

Therefore, the formed first semiconductor layer 121 may include the connected body portion 1211 and the peripheral portion 1212. The peripheral portion 1212 can be formed around the body portion 1211 in a mirror symmetrical manner, and the body portion 1211 protrudes from the peripheral portion 1212. The peripheral portion upper surface 1212a is a sloped surface. The distance from the periphery of the peripheral portion upper surface 1212a to the substrate 110 is greater than the distance from the position of the peripheral portion upper surface 1212a to the body portion 1211 to the substrate 110. The second semiconductor layer 122 is disposed on the body portion 1211 and has a pattern substantially the same as the body portion 1211. A light-emitting junction may be formed between the body portion 1211 and the second semiconductor layer 122.

As shown in FIGS. 6A, 6B, and 6C, the insulating layer 130 is formed to cover the first semiconductor layer 121 and the second semiconductor layer 122. The insulating layer 130 may be formed by depositing an insulating material, or may be formed by passivating the semiconductor material of the first semiconductor layer 121 and the second semiconductor layer 122 itself.

As shown in FIGS. 7A, 7B, and 7C, a portion of the insulating layer 130 is removed to expose a portion of the peripheral portion 1212, and an opening 131 is formed on the insulating layer 130. The opening 131 may expose a portion of the second semiconductor layer 122. In detail, the opening 131 may expose a portion of the upper surface S2' of the second semiconductor layer 122. At least a portion of the insulating layer 130 extends from the second semiconductor layer 122 to the substrate 110.

As shown in FIGS. 8A, 8B, and 8C, the first electrode 141 and the second electrode 142 are formed. One of the first electrodes 141 is partially disposed on the peripheral portion 1212 and electrically connected to the peripheral portion 1212. Other portions of the first electrode 141 may extend onto the substrate 110. A portion of the second electrode 142 is disposed on the second semiconductor layer 122 and electrically connected to the second semiconductor layer 122 via the opening 131. Other portions of the second electrode 142 may be disposed on the insulating layer 130 and may extend onto the substrate 110. The first semiconductor layer 121 and the second electrode 142 may be electrically insulated by the insulating layer 130.

9A, 9B and 9C, FIG. 9A is a schematic top view of a light-emitting device 200 according to another embodiment of the present invention, and FIG. 9B is a side cross-sectional view of the light-emitting device 200 of FIG. 9A along a BB cross-section. 9C is a side cross-sectional view of the light emitting device 200 of FIG. 9A along the CC cross section.

The illuminating device 200 of the present embodiment is similar to the illuminating device 100 shown in FIGS. 1A, 1B, and 1C, and therefore, the differences will be described, and the same reference numerals denote like elements.

The difference between the illuminating device 200 of the present embodiment and the illuminating device 100 shown in FIG. 1A, FIG. 1B and FIG. 1C is that the portion of the first electrode 241 disposed on the peripheral portion 1212 can surround the first semiconductor layer 121. In the entire week, instead of the light-emitting device 100, the first electrode 141 is not completely around the first semiconductor layer 121. The insulating layer 230 covers the first semiconductor layer 121, the second semiconductor layer 122, and the first electrode 241. One portion of the insulating layer 230 is located between the first electrode 241 and the second electrode 242. The first electrode 241 and the second electrode 242 can be electrically insulated by the insulating layer 230. In the present embodiment, the insulating layer 230 covers the first semiconductor layer 121 and the first electrode 241 and partially covers the second semiconductor layer 122, but is not limited thereto. In other embodiments, the insulating layer 230 may cover only a portion of the first semiconductor layer 121 and a portion of the first electrode 241 under the premise that the second electrode 242 can electrically insulate the first semiconductor layer 121 and the first electrode 241.

10A to FIG. 15A, FIG. 10B to FIG. 15B, and FIG. 10C to FIG. 15C, FIG. 10A to FIG. 15A are schematic diagrams showing the top view of the light-emitting device 200 of FIG. 9A, and FIG. 10B to FIG. 15A is a schematic side view of the manufacturing of the light-emitting device 200 along the BB section, and FIGS. 10C to 15C are schematic side views of the manufacturing of the light-emitting device 200 along the CC section of FIGS. 10A to 15A.

The flow of FIGS. 10A to 11A, 10B to 11B, and 10C to 11C is similar to FIGS. 2A to 5A, 2B to 5B, and 2C to 5C. As shown in FIGS. 10A, 10B, and 10C, a semiconductor element 1200 is provided on the substrate 110. The semiconductor device 1200 can include a first semiconductor layer 1210 and a second semiconductor layer 1220 stacked in sequence. The first semiconductor layer 1210 is closer to the substrate 110 than the second semiconductor layer 1220.

As shown in FIGS. 11A, 11B, and 11C, the semiconductor element 1200 of FIGS. 10A, 10B, and 10C is etched to have the first semiconductor layer 121 and the second semiconductor layer 122 having the shape of the present embodiment. In the first semiconductor layer 121 and the second semiconductor layer 122 which are etched, the thickness of the semiconductor material corresponding to the central portion R1 is the thickest, and the thickness of the semiconductor material corresponding to the central portion R1 corresponding to the peripheral portion R2 is the thinnest, corresponding to the periphery. The thickness of the semiconductor material in which the portion R2 is farther away from the central portion R1 is gradually thickened.

As shown in FIGS. 12A, 12B, and 12C, the first electrode 241 is formed. One of the first electrodes 241 is partially disposed on the peripheral upper surface 1212a and the peripheral side surface 1212b, and is electrically connected to the peripheral portion 1212. The first electrode 241 of this portion may be completely around the peripheral portion 1212 of the first semiconductor layer 121. Other portions of the first electrode 241 may extend onto the substrate 110.

As shown in FIGS. 13A, 13B, and 13C, the insulating layer 230 is formed to cover the first semiconductor layer 121, the second semiconductor layer 122, and the first electrode 241. Wherein, the insulating layer 230 can be formed by depositing an insulating material. In this embodiment, the insulating layer 230 covers the first semiconductor layer 121, the second semiconductor layer 122, and the first electrode 241, but is not limited thereto. In other embodiments, the insulating layer 230 may also cover a portion of the first semiconductor layer 121 and a portion of the first electrode 241 corresponding to a position at which the second electrode 241 will be formed later.

As shown in Figs. 14A, 14B and 14C, an opening 231 is provided in the insulating layer 230, and the opening 231 exposes a portion of the second semiconductor layer 122, that is, exposes a portion of the upper surface S2' of the second semiconductor layer 122.

As shown in FIGS. 15A, 15B, and 15C, the second electrode 242 is formed. A portion of the second electrode 242 is disposed on the second semiconductor layer 122 and electrically connected to the second semiconductor layer 122 via the opening 231 . Other portions of the second electrode 242 may be disposed on the insulating layer 230 and may extend onto the substrate 110. The first semiconductor layer 121 and the second electrode 242 may be electrically insulated by the insulating layer 230. One portion of the insulating layer 230 is located between the first electrode 241 and the second electrode 242. Therefore, the first electrode 241 and the second electrode 242 can also be electrically insulated by the insulating layer 230.

16A, FIG. 16B and FIG. 16C, FIG. 16A is a schematic top plan view of a light-emitting device 300 according to another embodiment of the present invention, and FIG. 16B is a side cross-sectional view of the light-emitting device 300 of FIG. 16A along a BB cross-section. FIG. 16C is a side cross-sectional view of the light emitting device 300 of FIG. 16A taken along the CC section.

The illuminating device 300 of the present embodiment is similar to the illuminating device 100 shown in FIGS. 1A, 1B, and 1C, and the difference is that the peripheral portion upper surface 3212a of the illuminating device 300 of the present embodiment is substantially parallel to the first of the substrate 110. Surface S1. Therefore, a portion of the insulating layer 330 located on the upper surface 3212a of the peripheral portion, a portion of the first electrode 341 at the upper surface 3212a of the peripheral portion, and a portion of the second electrode 342 at the upper surface 3212a of the peripheral portion are also substantially parallel to the substrate 110. The first surface S1.

17A, 17B and 17C, FIG. 17A is a schematic top view of a light-emitting device 400 according to another embodiment of the present invention, and FIG. 17B is a side cross-sectional view of the light-emitting device 400 of FIG. 17A along a BB cross-section. FIG. 17C is a side cross-sectional view of the light emitting device 400 of FIG. 17A taken along the CC section.

The light-emitting device 400 of the present embodiment is similar to the light-emitting device 200 shown in FIGS. 9A, 9B, and 9C, and the difference is that the peripheral portion upper surface 4212a of the light-emitting device 400 of the present embodiment is substantially parallel to the substrate 110. Therefore, a portion of the insulating layer 430 located on the upper surface 4212a of the peripheral portion, a portion of the first electrode 441 located at the upper surface 4212a of the peripheral portion, and a portion of the second electrode 442 located at the upper surface 4212a of the peripheral portion are also substantially parallel to the substrate 110.

18A, FIG. 18B and FIG. 18C, FIG. 18A is a schematic top plan view of a light-emitting device 500 according to another embodiment of the present invention, and FIG. 18B is a side cross-sectional view of the light-emitting device 500 of FIG. 18A along a BB cross-section. FIG. 18C is a side cross-sectional view of the light emitting device 500 of FIG. 18A along the CC cross section.

The light-emitting device 500 of the present embodiment is similar to the light-emitting device 100 shown in FIGS. 1A, 1B, and 1C, and the difference is that the upper surface 5212a of the peripheral portion of the light-emitting device 500 of the present embodiment is a curved surface. The arc surface may be a paraboloid, and the focus of each parabola on the paraboloid may be located on the illumination junction between the body portion 1211 and the second semiconductor layer 122. Therefore, a portion of the insulating layer 530 located on the upper surface 5212a of the peripheral portion, a portion of the first electrode 541 located at the upper surface 5212a of the peripheral portion, and a portion of the second electrode 542 located at the upper surface 5212a of the peripheral portion are also curved surfaces. Moreover, since the thickness of the insulating layer 530, the first electrode 541, and the second electrode 542 is extremely thin, when the arc surfaces of the three surfaces are paraboloids, the focus of each parabola on the paraboloids may also be located in the body portion 1211 and the second semiconductor. The illuminating junction between layers 122.

19A, 19B and 19C, FIG. 19A is a schematic top view of a light-emitting device 600 according to another embodiment of the present invention, and FIG. 19B is a side cross-sectional view of the light-emitting device 600 of FIG. 19A along a BB cross-section. 19C is a side cross-sectional view of the light emitting device 600 of FIG. 19A taken along the CC section.

The light-emitting device 600 of the present embodiment is similar to the light-emitting device 200 shown in FIGS. 9A, 9B, and 9C, and the difference is that the upper surface 6212a of the peripheral portion of the light-emitting device 600 of the present embodiment is a curved surface. The arc surface may be a paraboloid, and the focus of each parabola on the paraboloid may be located on the illumination junction between the body portion 1211 and the second semiconductor layer 122. Therefore, a portion of the insulating layer 630 located on the upper surface 6212a of the peripheral portion, a portion of the first electrode 641 located at the upper surface 6212a of the peripheral portion, and a portion of the second electrode 642 located at the upper surface 6212a of the peripheral portion are also curved surfaces. Moreover, since the thickness of the insulating layer 630, the first electrode 641, and the second electrode 642 is extremely thin, when the arc surfaces of the three surfaces are paraboloids, the focus of each parabola on the paraboloids may also be located in the body portion 1211 and the second semiconductor. The illuminating junction between layers 122.

In addition, please refer to FIG. 20 , which is a schematic top view of a light emitting device 700 according to another embodiment of the present invention. The illuminating device 700 of the present embodiment is similar to the illuminating device 100 shown in FIG. 1A, FIG. 1B and FIG. 1C. The main difference between the two is that the main body portion 7211 of the illuminating device 700 of the present embodiment can be round in plan view. Shape, but not limited thereto, may also be elliptical, flower-shaped, star-shaped or other symmetrical figures.

In summary, the light-emitting device of the present invention is formed by symmetrical arrangement of the shapes of the first semiconductor layer and the second semiconductor layer, so that the light-emitting junction formed between the first semiconductor layer and the second semiconductor layer is generated. The light can also tend to be symmetrical. In addition, by projecting the surrounding portion of the body portion, at least part of the light ray diverging along the lateral direction of the illuminating junction can be separated from the substrate by reflection of the first electrode located at the surrounding portion, thereby facilitating the application of the light. The light extraction rate of the light-emitting device can be improved.

Although the present invention has been disclosed above in the foregoing embodiments, it is not intended to limit the present invention. The changes and refinements of the present invention are within the scope of the patent protection of the present invention without departing from the spirit and scope of the present invention. Please refer to the attached patent application for the scope of protection defined by this new model.

100, 200, 300, 400, 500, 600, 700‧‧‧ illuminating devices
110‧‧‧Substrate
1200‧‧‧Semiconductor components
121, 1210‧‧‧ first semiconductor layer
1211, 7211‧‧‧ Body Department
1212‧‧‧ surrounding parts
1212a, 3212a, 4212a, 5212a, 6212a‧‧‧ upper surface of the surrounding area
1212b‧‧‧ peripheral side surface
122, 1220‧‧‧ second semiconductor layer
130, 230, 330, 430, 530, 630‧ ‧ insulation
131‧‧‧ openings
141, 241, 341, 441, 541, 641‧‧‧ first electrode
142, 242, 342, 442, 542, 642‧‧‧ second electrode
150‧‧‧resist
161, 162‧‧ mask
231‧‧‧ openings
D1, D2, D3, D4, D5, D6, D7, D8‧‧‧ distance
L1‧‧‧first axis
L2‧‧‧second axis
P0‧‧‧Shape Center
P1‧‧‧ first point
P2‧‧‧ second point
P3‧‧‧ third point
P4‧‧‧ fourth point
Central part of R1‧‧‧
R2‧‧‧ surrounding parts
S1‧‧‧ first surface
S2‧‧‧ second surface
S2'‧‧‧ upper surface
S3‧‧‧ third surface
S4‧‧‧ fourth surface θ‧‧‧ angle

1A is a top plan view of a light emitting device in accordance with an embodiment of the present invention. 1B is a side cross-sectional view of the light-emitting device of FIG. 1A taken along line B-B. 1C is a side cross-sectional view of the light-emitting device of FIG. 1A taken along line C-C. 2A-8A are schematic top plan views showing the manufacture of the light emitting device of FIG. 1A. 2B to FIG. 8B are schematic side views showing the process of manufacturing the light-emitting device of FIG. 2A to FIG. 8A along the line B-B. 2C to FIG. 8C are schematic side views showing the process of manufacturing the light-emitting device of FIG. 2A to FIG. 8A along the line C-C. FIG. 9A is a schematic top view of a light emitting device according to another embodiment of the present invention. 9B is a side cross-sectional view of the light emitting device of FIG. 9A taken along line B-B. 9C is a side cross-sectional view of the light emitting device of FIG. 9A taken along line C-C. 10A-15A are schematic top plan views showing the manufacture of the light-emitting device of FIG. 9A. 10B to FIG. 15B are schematic side views showing the process of manufacturing the light-emitting device of FIG. 10A to FIG. 15A along the line B-B. 10C to FIG. 15C are schematic side views showing the process of manufacturing the light-emitting device of FIG. 10A to FIG. 15A along the line C-C. FIG. 16A is a top plan view of a light emitting device according to another embodiment of the present invention. 16B is a side cross-sectional view of the light emitting device of FIG. 16A taken along line B-B. Figure 16C is a side cross-sectional view of the light-emitting device of Figure 16A taken along line C-C. 17A is a top plan view of a light emitting device in accordance with another embodiment of the present invention. 17B is a side cross-sectional view of the light-emitting device of FIG. 17A taken along line B-B. 17C is a side cross-sectional view of the light-emitting device of FIG. 17A taken along line C-C. FIG. 18A is a schematic top plan view of a light emitting device according to another embodiment of the present invention. 18B is a side cross-sectional view of the light-emitting device of FIG. 18A taken along line B-B. 18C is a side cross-sectional view of the light-emitting device of FIG. 18A taken along line C-C. FIG. 19A is a schematic top plan view of a light emitting device according to another embodiment of the present invention. 19B is a side cross-sectional view of the light-emitting device of FIG. 19A taken along line B-B. 19C is a side cross-sectional view of the light emitting device of FIG. 19A taken along the line C-C. 20 is a top plan view of a light emitting device in accordance with another embodiment of the present invention.

100‧‧‧Lighting device

110‧‧‧Substrate

121‧‧‧First semiconductor layer

1211‧‧‧ Body Department

1212‧‧‧ surrounding parts

1212a‧‧‧Top surface of the surrounding part

1212b‧‧‧ peripheral side surface

122‧‧‧Second semiconductor layer

130‧‧‧Insulation

131‧‧‧ openings

141‧‧‧First electrode

142‧‧‧second electrode

D5, D6, D7, D8‧‧‧ distance

S1‧‧‧ first surface

S2‧‧‧ second surface

S2’‧‧‧ upper surface

S3‧‧‧ third surface

S4‧‧‧ fourth surface

Θ‧‧‧ angle

Claims (11)

A light-emitting device comprising: a substrate; a first semiconductor layer disposed on the substrate, the first semiconductor layer comprising a body portion and a surrounding portion, the body portion protruding from the peripheral portion, wherein the peripheral portion Surrounding the body portion in a mirror symmetrical manner; a second semiconductor layer is disposed on the body portion, and the second semiconductor layer pattern is substantially identical to the body portion; a first electrode is at least partially disposed at the periphery portion And electrically connected to the first semiconductor layer; and a second electrode disposed at least partially on the second semiconductor layer and electrically connected to the second semiconductor layer. The illuminating device of claim 1, wherein the material of the first electrode is a light reflective conductive material. The illuminating device of claim 1, wherein the second electrode is made of a light-transmitting conductive material. The illuminating device of claim 1, further comprising an insulating layer covering a portion of the first semiconductor layer, the second electrode being electrically insulated from the first semiconductor layer via the insulating layer. The illuminating device of claim 1, further comprising an insulating layer covering the first semiconductor layer, the second semiconductor layer and the first electrode, the insulating layer having an opening exposing at least a portion of the second semiconductor a layer, the second electrode is electrically connected to the second semiconductor layer via the opening. The illuminating device of claim 5, wherein one of the insulating layers is partially located between the first electrode and the second electrode. The illuminating device of claim 1, wherein the peripheral portion has an upper surface facing away from a peripheral portion of the substrate, the peripheral portion upper surface being substantially parallel to the substrate. The illuminating device of claim 1, wherein the peripheral portion has an upper surface facing away from a peripheral portion of the substrate, and an interface between the first semiconductor layer and the second semiconductor layer, the upper surface of the peripheral portion There is an angle θ with the junction mask, where 45° ≦ θ ≦ 70°. The illuminating device of claim 1, wherein the substrate has a first surface, the first surface is adjacent to the first semiconductor layer, and the second semiconductor layer has a second surface, the second surface is adjacent to the first semiconductor a layer, the first electrode on the peripheral portion has a third surface and a fourth surface, the third surface is adjacent to the first semiconductor layer, the fourth surface is located on the opposite side of the third surface, wherein the first electrode The distance from the fourth surface to the first surface of the substrate is less than the distance from the second surface of the second semiconductor layer to the first surface of the substrate. The illuminating device of claim 1, wherein the peripheral portion has an upper surface facing away from a peripheral portion of the substrate, the upper surface of the peripheral portion being a paraboloid. The illuminating device of claim 1, wherein the body portion is polygonal or circular.