TWM522419U - Fingerprint recognition sensor - Google Patents

Description

Fingerprint sensor

A fingerprint identification sensor, in particular, a fingerprint identification sensor that separately sets a fingerprint sensing unit for sensing a fingerprint sensing signal and an integrated circuit chip for processing a fingerprint sensing signal by different methods.

With the development of technology, electronic systems such as mobile phones, personal notebook computers or tablets have become a must-have tool in life, and the information stored in these electronic systems, such as contacts and photos, has become quite personal. specialty. Therefore, in order to avoid the loss or misappropriation of important information, the presence of fingerprint recognition sensors in electronic systems has become a trend.

At present, the common fingerprint recognition sensor senses the fingerprint of the user's finger through the fingerprint sensing chip, and the fingerprint sensing chip manufactures the sensing electrode and the processing circuit for fingerprint identification on the surface of the semiconductor wafer through the integrated circuit process. In general, the larger the contact area between the finger and the fingerprint chip, the larger the fingerprint sensing area, and the more complete the fingerprint information that the fingerprint sensing chip can acquire. In order to maintain a certain degree of recognition of the finger fingerprint, the area of the semiconductor wafer obtained by cutting the wafer needs to be approximately the same as the size of the finger fingerprint area. As a result, the cost of manufacturing integrated circuit processes on semiconductor wafers is also high.

An embodiment of the present invention provides a fingerprint identification sensor including an insulating substrate, a fingerprint sensing unit, and an integrated circuit chip. The insulating substrate has a surface and a bottom surface opposite to the surface. The fingerprint sensing unit is disposed on a surface of the insulating substrate. The fingerprint sensing unit divides the sensing area and the circuit area. The fingerprint sensing unit includes at least one sensing element located in the sensing area and at least one switching element located in the circuit area. The fingerprint sensing unit includes a polysilicon layer formed on the insulating substrate, a first conductive layer, and a second conductive layer. The first conductive layer is between the polysilicon layer and the second conductive layer, wherein the polysilicon layer comprises at least one polysilicon pattern, the first conductive layer comprises a first electrode, and the second conductive layer comprises at least a second electrode pattern and a second electrode. The polysilicon pattern and the electrode patterns constitute a switching element, the first electrode and the second electrode constitute a sensing element, and the sensing element is configured to sense the texture of the finger to generate a fingerprint sensing signal and transmit the signal to the switching element, and the switching element outputs Fingerprint sensing signal. The integrated circuit chip is disposed on the surface of the insulating substrate and electrically connected to the switching element of the fingerprint sensing unit. The integrated circuit chip receives the fingerprint sensing signal and processes the output result signal.

In one embodiment, the polysilicon layer of the fingerprint sensor is located on a surface of the insulating substrate, the first conductive layer is formed on the polysilicon layer, and the second conductive layer is formed on the first conductive layer.

In one embodiment, the fingerprint sensing unit of the fingerprint recognition sensor includes a plurality of sensing elements, and the sensing elements form an electrode array structure and the sensing elements are respectively connected to a transmitting source and a receiving source. Sexually connected, when the sensing elements of one of the electrode array structures receive the voltage signal emitted by the transmitting source, the sensing elements of the other rows of the electrode array structure are grounded or electrically floating.

In an embodiment, the second conductive layer of the fingerprint recognition sensor includes at least two second electrodes, and the position of the first electrode is between the positions corresponding to the two adjacent second electrodes.

In one embodiment, the integrated circuit chip of the fingerprint recognition sensor includes an operational amplifier, and the operational amplifier is electrically connected to the fingerprint sensing unit. The operational amplifier has a positive input terminal, a negative input terminal, and an output terminal, and the positive input terminal The terminal is grounded, the negative input terminal is electrically connected to the second electrode, the output terminal is electrically connected to the first electrode, and an output voltage is output.

In one embodiment, the fingerprint sensor further includes a substrate and an encapsulation layer. The insulating substrate is disposed on the substrate. The substrate includes a plurality of pads, and at least one of the pads is at least connected to a surface of the insulating substrate. The electrical connection is made, and the encapsulation layer covers the insulating substrate, the fingerprint sensing unit, and the integrated circuit chip and extends over the substrate.

In one embodiment, the fingerprint sensor further includes a flexible circuit substrate, an encapsulation layer, and a protective colloid. The flexible circuit substrate is electrically connected to at least one contact on a surface of the insulating substrate, and the encapsulation layer at least covers the fingerprint sense. The measuring unit and a part of the insulating substrate cover the integrated circuit chip and a part of the insulating substrate.

In one embodiment, the fingerprint recognition sensor further includes a flexible circuit substrate, an encapsulation layer, and a carrier substrate. The flexible circuit substrate is electrically connected to at least one contact on a surface of the insulating substrate, and the encapsulation layer covers the insulating substrate. The surface, the fingerprint sensing unit and the integrated circuit chip, the carrier substrate covers the encapsulation layer.

Another embodiment of the present invention provides a fingerprint identification sensor including an insulating substrate, a fingerprint sensing unit, a flexible circuit substrate, and an integrated circuit chip. The insulating substrate has a surface and a bottom surface opposite to the surface. The fingerprint sensing unit includes at least one sensing element located in the sensing area and at least one switching element located in the circuit area. The fingerprint sensing unit includes a polysilicon layer formed on the insulating substrate, a first conductive layer, and a second conductive layer. The first conductive layer is between the polysilicon layer and the second conductive layer, wherein the polysilicon layer comprises at least one polysilicon pattern, the first conductive layer comprises a first electrode, and the second conductive layer comprises at least a second electrode pattern and a second electrode. The polysilicon pattern and the electrode patterns constitute a switching element, the first electrode and the second electrode constitute a sensing element, and the sensing element is configured to sense the texture of the finger to generate a fingerprint sensing signal and transmit the signal to the switching element, and the switching element outputs Fingerprint sensing signal. The flexible circuit substrate is electrically connected to at least one contact on a surface of the insulating substrate. The integrated circuit chip is disposed on the flexible circuit substrate and electrically connected to the switching element of the fingerprint sensing unit through the flexible circuit substrate, and the integrated circuit chip receives the fingerprint sensing signal and processes the output result signal.

In one embodiment, the contact of the fingerprint sensor is the first conductive layer or the conductive layer of the same layer as the second conductive layer.

In summary, the present invention provides a fingerprint recognition sensor, and the fingerprint recognition sensor includes an insulating substrate, a fingerprint sensing unit, and an integrated circuit chip. The fingerprint sensing unit and the integrated circuit wafer are respectively disposed on the surface of the insulating substrate. In practice, the fingerprint sensing unit uses a thin film transistor array process to simultaneously form a thin film transistor as a switching element and form a sensing electrode as a sensing element on the insulating substrate. The integrated circuit chip is fabricated by an integrated circuit process, and is disposed on an insulating substrate through a glass flip chip process. The sensing element is configured to sense the texture of the finger to generate a fingerprint sensing signal and transmit the signal to the switching element, and the switching element outputs the fingerprint sensing signal to the integrated circuit chip, and the integrated circuit chip receives the fingerprint sensing signal and processes the signal Output result signal.

Since the present invention separates the fingerprint sensing unit that senses the fingerprint sensing signal and the integrated circuit chip that processes the fingerprint sensing signal by different methods, and the fingerprint sensing unit can be disposed at a cost through the thin film transistor array process. On a lower insulating substrate. Accordingly, compared with the conventional fingerprint identification sensor using the full integrated circuit process, the present invention does not need to reduce the fingerprint sensing area in order to reduce the cost of the integrated circuit process, that is, the creation can maintain a sense of possession. Under the premise of measuring the area, the cost of the integrated circuit process is effectively reduced.

The exemplary embodiments are described with reference to the accompanying drawings, in which FIG. It should be noted that the inventive concept may be embodied in many different forms and should not be construed as being limited to the illustrative embodiments set forth herein. Rather, these exemplary embodiments are provided so that this description will be thorough and complete, and the scope of the inventive concept will be fully conveyed to those skilled in the art. In each of the figures, the relative proportions of the various layers and regions may be exaggerated, and like numerals indicate the like elements.

FIG. 1A is a schematic structural diagram of a fingerprint identification sensor according to a first embodiment of the present invention. FIG. 1B is a functional block diagram of the fingerprint recognition sensor of the first embodiment of the present invention. Referring to FIG. 1A and FIG. 1B , in the embodiment, the fingerprint identification sensor 100 is actually a capacitive fingerprint sensor. The fingerprint recognition sensor 100 includes an insulating substrate 110, a fingerprint sensing unit 120, and an integrated circuit chip 130. The fingerprint sensing unit 120 and the integrated circuit chip 130 are disposed on the insulating substrate 110.

The insulating substrate 110 has a surface 112 and a bottom surface 114 opposite to the surface 112. In this embodiment, the fingerprint sensing unit 120 and the integrated circuit wafer 130 are disposed on the surface 112 of the insulating substrate 110. In practice, the insulating substrate 110 is a carrier disposed on the fingerprint sensing unit 120 and the integrated circuit chip 130. The insulating substrate 110 may be a glass substrate, a plastic substrate, or a sapphire substrate.

The fingerprint sensing unit 120 is disposed on the surface 112 of the insulating substrate 110, and the fingerprint sensing unit 120 divides the sensing region M1 and the circuit region M2. The fingerprint sensing unit 120 includes at least one sensing element 122 and at least one switching element 124, wherein the sensing element 122 is located in the sensing area M1, and the switching element 124 is located in the circuit area M2. In practice, the fingerprint sensing unit 120 includes a plurality of sensing elements 122. The sensing elements 122 are electrode structural units. The sensing elements 122 are arranged in a matrix on the insulating substrate 110 to form an electrode array structure for sensing. The texture of the finger produces a fingerprint sensing signal. The switching element 124 is an active component for acting as a switch for transmitting signals to the sensing element 122 and outputting a fingerprint sensing signal from the sensing element 122.

In detail, the fingerprint sensing unit 120 includes a polysilicon layer Ps, a first conductive layer Pa, and a second conductive layer Pb formed on the surface 112 of the insulating substrate 110, wherein the first conductive layer Pa is located in the polysilicon layer Ps and the second conductive layer. Between layers Pb. In the present embodiment, the polysilicon layer Ps is formed on the surface 112 of the insulating substrate 110, the first conductive layer Pa is formed over the polysilicon layer Ps, and the second conductive layer Pb is formed over the first conductive layer Pa. The polysilicon layer Ps includes at least one polysilicon pattern 124p, the first conductive layer Pa includes a first electrode 122a, and the second conductive layer Pb includes at least a second electrode pattern 124b and a second electrode 122b. In practice, the fingerprint sensing unit 120 may further include other conductive layers or the like according to the electrical connection design, and may be formed between the first conductive layer Pa and the second conductive layer Pb, or may be formed on the first conductive layer. Above the Pa or the second conductive layer Pb, the other conductive layers may be used as a trace (not shown) or the like. Further, the number of layers of other conductive layers and the circuit layout design can be planned according to the consideration of the electrical connection of the fingerprint sensing unit 120. For example, the fingerprint sensing unit 120 may further include a third conductive layer (not shown) between the first conductive layer Pa and the second conductive layer Pb, and the third conductive layer may be used as an electrical connection. line.

The first electrode 122a and the second electrode 122b constitute a sensing element 122, and the polysilicon pattern 124p and the electrode pattern 124b constitute a switching element 124. Specifically, the first electrode 122a and the second electrode 122b included in the electrode structure unit of the sensing element 122 serve as sensing electrodes, and a reference capacitance may be formed between the first electrode 122a and the second electrode 122b. When the finger touches the fingerprint recognition sensor, the second electrode 122b senses the finger and forms a sensing signal (current or voltage sensing signal) of the fingerprint peak and the valley corresponding to the reference capacitance. It should be noted that, since the fingerprint sensing unit 120 may further include a third conductive layer (not shown) between the first conductive layer Pa and the second conductive layer Pb, the trace of the third conductive layer may be located at Between an electrode 122a and the second electrode 122b.

The polysilicon pattern 124p of the polysilicon layer Ps can be used as a gate electrode, and the at least two electrode patterns 124b can be used as a source electrode and a drain electrode, respectively. Accordingly, the switching element 124 is a thin film transistor (TFT), which is substantially through the two-electrode pattern 124b of the second conductive layer Pb as a source electrode and a drain electrode, respectively, and a polysilicon layer. The polysilicon pattern 124p of Ps is configured as a gate electrode. In practice, the fingerprint sensing unit 120 may further include an insulating layer, a semiconductor layer or other dielectric layer formed on the insulating substrate 110, so that the switching element 124 may include a gate according to various process design and process considerations. A very insulating layer, an etch stop layer, a channel layer or other dielectric layer. In the present embodiment, the switching element 124 is a bottom-gate type thin film transistor as an example.

In other embodiments, the switching element 124 can also be a top-gate type thin film transistor (not shown). That is, in other embodiments, the second conductive layer Pb is formed on the surface 112 of the insulating substrate 110, the first conductive layer Pa is formed on the second conductive layer Pb, and the polysilicon layer Ps is formed on the first conductive layer. Above Pa. Similarly, the switching element 124 is substantially formed by transmitting the second electrode pattern 124b of the second conductive layer Pb as a source electrode and a drain electrode, and a polysilicon pattern 124p passing through the polysilicon layer Ps as a gate electrode. Thin film transistor. Therefore, the polysilicon pattern 124p used as the gate electrode is located above the two electrode pattern 124b serving as the source electrode and the drain electrode. However, this creation does not limit the type of the switching element 124, and the order and position of formation of the gate insulating layer, the etch stop layer, and the channel layer can be adjusted correspondingly depending on the type of the switching element 124.

In detail, the material of the first conductive layer Pa and the second conductive layer Pb may be a transparent conductive material, such as indium tin oxide (ITO), indium zinc oxide (IZO), or aluminum zinc oxide (indium zinc oxide). Aluminum zinc oxide (AZO), indium tin zinc oxide (ITZO) or zinc oxide (zinc oxide). Alternatively, the material of the first conductive layer Pa and the second conductive layer Pb may be a metal material, gold, silver, copper, nickel, or any combination thereof.

In practice, when the sensing element 122 and the switching element 124 are fabricated, a thin film transistor can be simultaneously formed as a switching element 124 and a sensing electrode as a sensing element 122 through a TFT Array process. . In this embodiment, specifically, the polysilicon layer PS including the polysilicon pattern 124p is deposited, lithographically, and etched. Then, the entire conductive layer is deposited, and then formed into a first conductive layer Pa by a process such as lithography and etching, wherein the first conductive layer Pa includes the first electrode 122a. Then, according to the process design and process considerations, an insulating layer, a semiconductor layer or other conductive layer is deposited, and a process such as lithography and etching is used to form a gate insulating layer, an etch stop layer, a channel layer or other traces. . Then, the entire conductive layer is deposited, and then formed into a second conductive layer Pb by a process such as lithography and etching. The second conductive layer Pb includes at least two electrode patterns 124b and second electrodes 122b. It is noted that the fingerprint sensing unit 120 may further include another conductive layer or the like according to the electrical connection design, and may be formed between the first conductive layer Pa and the second conductive layer Pb, or may be formed in the first The conductive layer Pa or the second conductive layer Pb is disposed on the conductive layer Pa or the second conductive layer Pb. Therefore, the number of layers of the other conductive layers and the circuit layout can be fabricated by performing lithography and etching according to the electrical connection of the fingerprint sensing unit 120. .

The integrated circuit chip 130 is disposed on the surface 112 of the insulating substrate 110, and the integrated circuit chip 130 is electrically connected to the switching element 124 of the fingerprint sensing unit 120. Specifically, the integrated circuit wafer 130 is provided with a bump B1, and a ceramic on-glass (COG) process is used to sandwich an anisotropic conductive film (ACF) A1. Between the circuit chip 130 and the insulating substrate 110, the position of the bump B1 of the integrated circuit wafer 130 corresponds to the position of the pad P1 on the surface 112 of the insulating substrate 110, so that the bump B1 of the integrated circuit wafer 130 is The pads P1 on the surface 112 of the insulating substrate 110 are electrically connected.

It should be noted that the pad P1 may belong to the same layer of the conductive layer as the first conductive layer Pa or the second conductive layer Pb depending on the design of the electrical connection and the transmission of the signal. Since the integrated circuit chip 130 is electrically connected to the switching element 124 of the fingerprint sensing unit 120, and in this embodiment, the switching element 124 is a bottom gate thin film transistor, and the fingerprint sensing signal from the fingerprint sensing unit 120 is sourced. The pole or the drain enters and exits the switch element 124. Therefore, in the embodiment, the pad P1 and the second conductive layer Pb belong to the same layer of the conductive layer. Accordingly, the fingerprint sensing signal from the sensing element 122 of the fingerprint sensing unit 120 can be transmitted to the integrated circuit chip 130 via the switching element 124 of the fingerprint sensing unit 120 and through the pad P1.

It should be noted that the integrated circuit chip 130 is a microprocessor (Micro Processing Unit) which is fabricated on the surface of a semiconductor wafer by an integrated circuit process. The integrated circuit chip 130 may include integrated circuit components (not shown) and analog integrated circuit components 132 having analog and digital mixed signals depending on a desired function. The integrated circuit chip 130 receives the fingerprint sensing signal from the fingerprint sensing unit 120 and processes the fingerprint sensing signal into a fingerprint analog sensing signal, which can be processed by the analog conversion digital processing and output a result signal.

The fingerprint recognition sensor 100 further includes a substrate 150 and a glue 160. Specifically, the substrate 150 is a circuit board, and the substrate 150 is disposed on the bottom surface 114 of the insulating substrate 110. In order to better connect the substrate 150 to the insulating substrate 110 , the substrate 150 may be bonded to the bottom surface 114 of the insulating substrate 110 by the adhesive 160 . The glue 160 is located between the substrate 150 and the insulating substrate 110.

The wiring pattern on the surface of the substrate 150 includes a plurality of pads 140. At least one of the pads 140 is electrically connected to the contact P2 on the surface 112 of the insulating substrate 110. The contact P2 may be a conductive layer of the same layer as the first conductive layer Pa or the second conductive layer Pb. It can also be in the same layer as other conductive layers or traces (not shown) depending on electrical connection considerations. In practice, the solder pad 140 and the contact P2 can be electrically connected by wire bonding, but this creation does not limit this.

The fingerprint recognition sensor 100 further includes an encapsulation layer 170. In the present embodiment, the encapsulation layer 170 covers the insulating substrate 110, the fingerprint sensing unit 120, and the integrated circuit wafer 130 and extends over the surface of the substrate 150. It should be noted that the encapsulation layer 170 is a molding compound for protecting the fingerprint sensing unit 120 and the integrated circuit chip 130 or avoiding improper electrical connection or short circuit. The encapsulation layer 170 may be a viscous preimpregnated material layer, wherein the prepreg material layer is, for example, a glass fiber prepreg, a carbon fiber prepreg, or an epoxy resin. material.

FIG. 1C is a schematic diagram of the sensing principle of the fingerprint identification sensor according to the first embodiment of the present invention. Please refer to FIG. 1C with reference to FIG. 1B. In this embodiment, the position of the first electrode 122a is located between the positions corresponding to the two adjacent second electrodes 122b. The driving integrated circuit component 132 includes at least a driving circuit component 132a, a sensing driving component 132b, and a process element (not shown). In the present embodiment, the drive circuit component 132a is located substantially in the row direction, and the sense drive component 132b is located substantially in the column direction. The switch element 124 includes a first switch element 1241 and a second switch element 1242. The first switch element 1241 serves as a switch for electrically connecting the drive circuit element 132a and the first electrode 122a, and the second switch element 1242 serves as a switch. A switching element electrically connecting the driving element 132b and the second electrode 122b is sensed. . The drive circuit component 132a can be used as a radio frequency emission source (Tx), and the sense drive component 132b can be used as a reception source (Rx). When the finger touches the encapsulation layer 170 of the fingerprint recognition sensor, the sum of the capacitance values between the first electrode 122a and the second electrode 122b of the sensing element 122 corresponding to the contact position of the finger changes, and the original capacitance ( The finger does not contact the encapsulation layer 170) to cause a difference, whereby the fingerprint sensing signal (current or voltage sensing signal) is generated, and the driving circuit component 132a can sequentially input the voltage signal to the column of the fingerprint sensing unit 120. Corresponding first switching element 1241.

In practice, when a plurality of sensing elements 122 of one of the columns sequentially receive the voltage signals emitted by the driving circuit elements 132a (transmitting sources), these other senses in the other columns of the electrode array structure The cell 122 can be grounded or electrically floating. The second switching element 1242 in the column direction sequentially inputs the fingerprint sensing signals generated by the sensing elements 122 in the respective row directions to the sensing driving element 132b. The sensing drive component 132b receives the fingerprint sensing signal and drives the processing unit of the integrated circuit component 132. The processing unit that drives the integrated circuit component 132 determines the finger position based on the fingerprint sensing signal.

FIG. 1D is a circuit diagram of the fingerprint identification sensor of the first embodiment of the present invention. Please refer to FIG. 1D with reference to FIG. 1B and FIG. 1C. The integrated circuit chip 130 can include an operational amplifier 134 that is electrically coupled to the fingerprint sensing unit 120 depending on the desired function. The operational amplifier 134 has a positive input 134a, a negative input 134b, and an output 134c. The positive input terminal 134a is grounded. The negative input terminal 134b is electrically connected to the second electrode 122b, the finger applies an input voltage signal, the second electrode 122b and the pattern of the finger form the sensing capacitance C _finger , and the reference capacitor is formed between the first electrode 122a and the second electrode 122b. C _ref , and the different second switching elements 1242 respectively input the fingerprint sensing signals generated by the sensing elements 122 from different contact positions of the corresponding fingers to the negative input terminal 134b. The output terminal 134c is electrically connected to the first electrode 122a and outputs an output voltage.

FIG. 2 is a schematic structural diagram of a fingerprint identification sensor according to a second embodiment of the present invention. Please refer to Figure 2. The fingerprint recognition sensor 200 of the second embodiment is similar in structure to the fingerprint recognition sensor 100 of the first embodiment. The main difference is that the fingerprint recognition sensor 200 includes an encapsulation layer 270, a flexible circuit substrate 280, and a protective colloid. 290. The encapsulation layer 270 covers the fingerprint sensing unit 120 and a portion of the insulating substrate 110. The flexible circuit board 280 can be electrically connected to at least one contact P2 on the surface 112 of the insulating substrate 110 via a flexible circuit substrate-foaming process (FPC on glass, FOG) by an isotropic conductive film (not shown). The protective colloid 290 covers the integrated circuit wafer 130 and a portion of the insulating substrate 110.

FIG. 3 is a schematic structural diagram of a fingerprint identification sensor according to a third embodiment of the present invention. Please refer to Figure 3. The fingerprint recognition sensor 300 of the third embodiment is similar in structure to the fingerprint recognition sensor 200 of the second embodiment. Generally, in the embodiment, the insulating substrate 110 is used as a carrier of the fingerprint sensing unit 120, and the flexible circuit substrate 380 is used as a carrier of the integrated circuit wafer 330. Specifically, the flexible circuit board 380 is electrically connected to at least one contact P2 on the surface 112 of the insulating substrate 110. The integrated circuit chip 330 bonds the bump B1 on the wafer and the flexible circuit substrate 380 through a film-on-film (COF) process, so that the integrated circuit chip 330 passes through the flexible circuit substrate 380 and the fingerprint sensing unit. The switch element 124 of the 120 is electrically connected to receive the fingerprint sensing signal from the sensing element 122 of the fingerprint sensing unit 120 and process and output a result signal.

FIG. 4 is a schematic structural diagram of a fingerprint identification sensor according to a fourth embodiment of the present invention. Please refer to Figure 4. The fingerprint recognition sensor 400 of the fourth embodiment is similar in structure to the fingerprint recognition sensor 200 of the second embodiment. The flexible circuit substrate 480 is electrically connected to at least one contact P2 on the surface 112 of the insulating substrate 110, and the flexible circuit substrate 480 is mainly used to enable the fingerprint recognition sensor 400 to be connected to the external circuit. In this embodiment, the encapsulation layer 470 is disposed on the surface 112 of the insulating substrate 110 to cover the fingerprint sensing unit 120, the integrated circuit wafer 130, and a portion of the flexible circuit substrate 480. The carrier substrate C1 is overlaid on the encapsulation layer 470 and serves as a carrier for the fingerprint sensing unit 120 and the integrated circuit chip 130. When the finger is applied to the bottom surface 114 of the insulating substrate 110, the carrier substrate C1 can bear the force from the portion applied by the finger, thereby improving the overall structural strength of the fingerprint recognition sensor. Further, the fingerprint recognition sensor 400 can optionally include a color layer E1. The color layer E1 is disposed on the bottom surface 114 of the insulating substrate 110. It should be noted that the color layer E1 is a color paint, which can present a desired color according to the actual design of the fingerprint recognition sensor 400 to provide the appearance color of the fingerprint recognition sensor 400, such as but not limited to It is red, white, silver or black.

In summary, the present invention provides a fingerprint recognition sensor, and the fingerprint recognition sensor includes an insulating substrate, a fingerprint sensing unit, and an integrated circuit chip. The fingerprint sensing unit and the integrated circuit wafer are respectively disposed on the surface of the insulating substrate. In practice, the fingerprint sensing unit uses a thin film transistor array process to simultaneously form a thin film transistor as a switching element and form a sensing electrode as a sensing element on the insulating substrate. The integrated circuit chip is fabricated by an integrated circuit process, and is disposed on an insulating substrate through a glass flip chip process. The sensing element is configured to sense the texture of the finger to generate a fingerprint sensing signal and transmit the signal to the switching element, and the switching element outputs the fingerprint sensing signal to the integrated circuit chip, and the integrated circuit chip receives the fingerprint sensing signal and processes the signal Output result signal.

Since the present invention separates the fingerprint sensing unit that senses the fingerprint sensing signal and the integrated circuit chip that processes the fingerprint sensing signal by different methods, and the fingerprint sensing unit can be disposed at a cost through the thin film transistor array process. On a lower insulating substrate. Accordingly, compared with the conventional fingerprint identification sensor using the full integrated circuit process, the present invention does not need to reduce the fingerprint sensing area in order to reduce the cost of the integrated circuit process, that is, the creation can maintain a sense of possession. Under the premise of measuring the area, the cost of the integrated circuit process is effectively reduced.

Although the technical content of the present invention has been disclosed in the above preferred embodiments, it is not intended to limit the present invention. Anyone who is familiar with the art, and some modifications and refinements that do not depart from the spirit of the present invention should be included in the creation. Therefore, the scope of protection of this creation is subject to the definition of the scope of the patent application.

100, 200, 300, 400‧‧‧ fingerprint identification sensor
110‧‧‧Insert substrate
112‧‧‧ surface
114‧‧‧ bottom
120‧‧‧Finger sensing unit
122‧‧‧Sensitive element
122a‧‧‧first electrode
122b‧‧‧second electrode
124‧‧‧Switch element
124b‧‧‧electrode pattern
124p‧‧‧ Polysilicon pattern
1241‧‧‧The first switch element
1242‧‧‧Second switch element
130, 330‧‧‧ integrated circuit chip
132‧‧‧Drive integrated circuit components
132a‧‧‧Drive circuit components
132b‧‧‧Sensing drive components
134‧‧‧Amplifier
134a‧‧‧ positive input
134b‧‧‧negative input
134c‧‧‧output
140‧‧‧ solder pads
150‧‧‧Substrate
160‧‧‧Stained materials
170, 270, 470‧‧ ‧ encapsulation layer
280, 380, 480‧‧‧Soft circuit board
290‧‧‧Protective colloid
A1‧‧‧Indirect directional conductive film
B1‧‧‧Bumps
C1‧‧‧bearing substrate
C _finger ‧‧‧ Sense capacitance
C _ref ‧‧‧reference capacitor
E1‧‧‧ color layer
M1‧‧‧ Sensing Area
M2‧‧‧ circuit area
P1‧‧‧ pads
P2‧‧‧ joints
Pa‧‧‧first conductive layer
Pb‧‧‧Second conductive layer
Ps‧‧ polycrystalline layer

FIG. 1A is a schematic structural diagram of a fingerprint identification sensor according to a first embodiment of the present invention. FIG. 1B is a functional block diagram of the fingerprint recognition sensor of the first embodiment of the present invention. FIG. 1C is a schematic diagram of the sensing principle of the fingerprint identification sensor according to the first embodiment of the present invention. FIG. 1D is a circuit diagram of the fingerprint identification sensor of the first embodiment of the present invention. FIG. 2 is a schematic structural diagram of a fingerprint identification sensor according to a second embodiment of the present invention. FIG. 3 is a schematic structural diagram of a fingerprint identification sensor according to a third embodiment of the present invention. FIG. 4 is a schematic structural diagram of a fingerprint identification sensor according to a fourth embodiment of the present invention.

100‧‧‧Fingerprint sensor

110‧‧‧Insert substrate

112‧‧‧ surface

114‧‧‧ bottom

120‧‧‧Finger sensing unit

122‧‧‧Sensitive element

122a‧‧‧first electrode

122b‧‧‧second electrode

124‧‧‧Switch element

124b‧‧‧electrode pattern

124p‧‧‧ Polysilicon pattern

130‧‧‧Integrated circuit chip

140‧‧‧ solder pads

150‧‧‧Substrate

160‧‧‧Stained materials

170‧‧‧Encapsulation layer

A1‧‧‧Indirect directional conductive film

B1‧‧‧Bumps

M1‧‧‧ Sensing Area

M2‧‧‧ circuit area

P1‧‧‧ pads

P2‧‧‧ joints

Pa‧‧‧first conductive layer

Pb‧‧‧Second conductive layer

Claims (10)

A fingerprint identification sensor includes: an insulating substrate having a surface and a bottom surface opposite to the surface; a fingerprint sensing unit disposed on the surface of the insulating substrate, the fingerprint sensing unit dividing a sense The fingerprint sensing unit includes at least one sensing element located in the sensing area and at least one switching element located in the circuit area, and the fingerprint sensing unit includes a polysilicon layer formed on the insulating substrate a first conductive layer and a second conductive layer, the first conductive layer being located between the polysilicon layer and the second conductive layer, wherein the polysilicon layer comprises at least one polysilicon pattern, the first conductive layer comprises a first An electrode, wherein the second conductive layer comprises at least a second electrode pattern and a second electrode, the polysilicon pattern and the electrode patterns comprise the switching element, the first electrode and the second electrode comprise the sensing element, the sensing The element is configured to sense a fingerprint of a finger to generate a fingerprint sensing signal and transmit the fingerprint sensing signal to the switching element, and the switching element outputs the fingerprint sensing signal; and an integrated circuit chip And is connected to the switching element electrically sensing unit of the fingerprint on the surface of the insulating substrate, the integrated circuit chip to receive the fingerprint sensing signal and outputs a result signal to be processed. The fingerprint recognition sensor of claim 1, wherein the polysilicon layer is on the surface of the insulating substrate, the first conductive layer is formed on the polysilicon layer, and the second conductive layer is formed on the first Above the conductive layer. The fingerprint recognition sensor of claim 1, wherein the fingerprint sensing unit comprises a plurality of sensing elements, the sensing elements form an electrode array structure and the sensing elements are respectively associated with a transmitting source and a Receiving a source electrical connection, when the sensing elements of one of the electrode array structures receive the voltage signal emitted by the transmitting source, the sensing elements of the other rows of the electrode array structure are grounded or electrically Floating. The fingerprint recognition sensor of claim 1, wherein the second conductive layer comprises at least two second electrodes, and the position of the first electrode is located between two positions corresponding to the second electrodes. The fingerprint identification sensor of claim 1, wherein the integrated circuit chip comprises an operational amplifier, the operational amplifier is electrically connected to the fingerprint sensing unit, and the operational amplifier has a positive input terminal and a negative input terminal. The input terminal and the output terminal are grounded, and the negative input terminal is electrically connected to the second electrode, and the output terminal is electrically connected to the first electrode and outputs an output voltage. The fingerprint identification sensor of claim 1, further comprising: a substrate, the insulating substrate is disposed on the substrate, the substrate comprises a plurality of pads, wherein at least one of the pads and the surface of the insulating substrate At least one of the contacts is electrically connected; and an encapsulation layer, wherein the encapsulation layer covers the insulating substrate, the fingerprint sensing unit, and the integrated circuit chip and extends over the substrate. The fingerprint identification sensor of claim 1, further comprising: a flexible circuit substrate, wherein the flexible circuit substrate is electrically connected to at least one contact on the surface of the insulating substrate; an encapsulation layer covering at least The fingerprint sensing unit and a portion of the insulating substrate; and a protective colloid covering the integrated circuit wafer and a portion of the insulating substrate. The fingerprint identification sensor of claim 1, further comprising: a flexible circuit substrate, wherein the flexible circuit substrate is electrically connected to at least one contact on the surface of the insulating substrate; an encapsulation layer covering the The surface of the insulating substrate, the fingerprint sensing unit and the integrated circuit wafer; and a carrier substrate overlying the encapsulation layer. A fingerprint identification sensor includes: an insulating substrate having a surface and a bottom surface opposite to the surface; a fingerprint sensing unit disposed on the surface of the insulating substrate, the fingerprint sensing unit dividing a sense The fingerprint sensing unit includes at least one sensing element located in the sensing area and at least one switching element located in the circuit area, and the fingerprint sensing unit includes a polysilicon layer formed on the insulating substrate a first conductive layer and a second conductive layer, the first conductive layer being located between the polysilicon layer and the second conductive layer, wherein the polysilicon layer comprises at least one polysilicon pattern, the first conductive layer comprises a first An electrode, wherein the second conductive layer comprises at least a second electrode pattern and a second electrode, the polysilicon pattern and the electrode patterns comprise the switching element, the first electrode and the second electrode comprise the sensing element, the sensing The element is configured to sense a fingerprint of a finger to generate a fingerprint sensing signal and transmit the fingerprint sensing signal to the switching element, and the switching element outputs the fingerprint sensing signal; a flexible circuit substrate and The at least one contact on the surface of the insulating substrate is electrically connected; and an integrated circuit chip is disposed on the flexible circuit substrate and electrically connected to the switch element of the fingerprint sensing unit through the flexible circuit substrate. The integrated circuit chip receives the fingerprint sensing signal and processes and outputs a result signal. The fingerprint recognition sensor of claim 9, wherein the contact is the same conductive layer as the first conductive layer or the second conductive layer.