TWM519316U - Guide element for thin-film deposition and thin-film deposition apparatus comprising the same - Google Patents

Description

Drainage element for film deposition and thin film deposition device containing the same

The present invention relates to a drainage element for film deposition and a thin film deposition apparatus including the same.

In the conventional production of thin film light-emitting diodes, Molecular Beam Epitaxy (MBE), Chemical Vapor Deposition (CVD), and Plasma Enhanced Chemical Vapor Deposition (Plasma Enhanced Chemical) can be used. Vapor Deposition; PECVD), Atomic Layer Epitaxy (ALE) or Atomic Layer Deposition (ALD) to grow various films required to form a light-emitting diode. Among them, the use of an atomic layer deposition process and a plasma-assisted chemical vapor deposition process to grow various films required to form a light-emitting diode has gradually become a trend.

For today's process technology, the atomic layer deposition process and the plasma-assisted chemical vapor deposition process belong to two different process chambers, not only equipment In the process of component transfer, the unfinished LED components are exposed to the environment, resulting in a decrease in film quality. Thin film deposition device

The present invention provides a drainage element for film deposition, and a thin film deposition apparatus including the same. The drainage element for film deposition comprises: an annular body comprising an upper surface and a lower surface opposite to the upper surface; and a plurality of extraction channels located on the upper surface or the lower surface, and recessed in the ring a body through which the first process gas flows out to the outside of the annular body; wherein a pumping prop with an extracting flow direction has an angle with a radial direction of the center of the annular body .

10‧‧‧Semiconductor substrate

20‧‧ nucleation layer

30‧‧‧buffer layer

40‧‧‧n-type gallium nitride layer (n-GaN)

50‧‧‧ active layer

100‧‧‧film deposition apparatus

110‧‧‧Upper cavity

110A‧‧‧Upper upper body parts

110B‧‧‧Upper upper part

115‧‧‧Second process gas conduit

120‧‧‧ lower cavity

125‧‧‧First Process Gas Pipeline

130‧‧‧Fixed devices

135‧‧‧ bias electrode

140‧‧‧Hosting

145‧‧‧ gas barrier

148‧‧‧Drawing runner

150‧‧‧spray head for vapor deposition

150A‧‧‧first air disc

150B‧‧‧second order air disc

150A1‧‧‧ first upper surface

150A2‧‧‧ first lower surface

150B1‧‧‧Second upper surface

150B2‧‧‧Second lower surface

151‧‧‧ first recess

152‧‧‧Second pocket

153‧‧‧First vent

154‧‧‧Second vent

160‧‧‧Main gas supply pipe

161‧‧‧First inclined wall

162‧‧‧Branch gas supply pipe

163‧‧‧ vent

164‧‧‧Management

164’‧‧‧Bend Manifold

164A‧‧‧Bend

164B‧‧‧Vertical

165‧‧‧First process gas inlet

166‧‧‧ first opening

167‧‧‧ blocking block

170‧‧‧ Plasma gas dispersion plate

170A‧‧‧First plasma gas dispersion plate

170B‧‧‧Second plasma gas dispersion plate

170C‧‧‧The third plasma gas dispersion plate

172‧‧‧ third vent

174‧‧‧fourth vent

176‧‧‧ fifth vent

177‧‧‧ bias electrode

177A‧‧‧ dielectric layer

177B‧‧‧Metal electrode

177C‧‧‧ dielectric layer

178‧‧‧Quartz retaining ring

180‧‧‧Intake room

190‧‧‧Second process gas

200‧‧‧Substrate

300‧‧‧First gas supply system

310‧‧‧ First source of precursor gas

315‧‧‧First high pressure pipe

320‧‧‧Second precursor gas supply

325‧‧‧Second high pressure tube

330‧‧‧Clean gas supply

335‧‧‧ third high pressure pipe

350‧‧‧High pressure control valve

400‧‧‧Second gas supply system

410‧‧‧Second process gas supply

415‧‧‧ fourth high pressure pipe

450‧‧‧High pressure control valve

500‧‧‧Air pump

550‧‧‧Exhaust pipe

600‧‧‧Second semiconductor layer

61‧‧‧First electrode

62‧‧‧second electrode

620‧‧‧metal layer

640‧‧‧graphene layer

650‧‧‧graphene layer

N1‧‧‧ first normal

N2‧‧‧ second normal

900‧‧‧ cavity

Figure 1 is a schematic cross-sectional view showing a thin film deposition apparatus according to the present invention.

Fig. 2A is a plan view showing the first-stage air disk 150A and the second-stage air disk 150B of the shower head 150 for the thin film deposition apparatus shown in Fig. 1.

Fig. 2B is a view showing the exhaust direction of the first air passage 150A and the first exhaust hole 153 and the second exhaust hole 154 which are located on the B-B' section line shown in Fig. 2A.

Fig. 2C is a schematic cross-sectional view showing the first-stage air disc 150A and the second-stage air disc 150B shown in Fig. 2A combined into a sprinkler head 150 for vapor phase sinking and taken along the line B-B'.

Fig. 2D is an enlarged cross-sectional view showing the plasma gas dispersion disk 170 shown in Fig. 1.

2E and 2E' are schematic cross-sectional views showing the bias electrode 177 and the plasma generating portion in Fig. 2D.

Fig. 2F is a schematic cross-sectional view showing the A-A' hatching of the second-order air disk 150B shown in Fig. 2A.

Fig. 3 is a plan view showing the carrier 140 shown in Fig. 1.

Figure 4 is a schematic view showing the flow of process gas in the thin film deposition apparatus in accordance with the present invention for performing the first thin film deposition mode.

Figure 5 is a schematic view showing the flow of process gas in the thin film deposition apparatus in accordance with the present invention for performing the second thin film deposition mode.

6A to 6B are cross-sectional processes for forming a composite layer electrode containing graphene and a metal pattern layer on p-GaN by using the thin film deposition apparatus according to the present invention.

7A to 7C are cross-sectional processes for forming a graphene electrode on p-GaN using the thin film deposition apparatus according to the present invention.

The manner in which the novel embodiments are made and used will be described in detail below. It should be noted, however, that the present invention provides many new concepts that can be applied, which can be implemented in a variety of specific forms. The specific embodiments discussed herein are merely illustrative of specific ways to make and use the present invention and are not intended to limit the scope of the invention.

Example:

First, referring to Fig. 1, there is shown a schematic cross-sectional view of a thin film deposition apparatus according to the present invention. As shown in FIG. 1, the thin film deposition apparatus according to the present invention comprises a cavity 100 which is composed of an upper cavity 110, a lower cavity 120 and a fixing device 130. The upper cavity 110 includes an upper cavity. The upper member 110A and the upper cavity lower member 110B are composed of. The cavity 100 includes a carrier 140 surrounding the gas barrier ring 145, and is disposed in the lower cavity 120 for carrying a substrate 200, and disposed above the carrier 140 and located on the upper cavity upper component 110A. A plasma generating system includes an inlet chamber 180 and a plasma gas dispersion tray 170. In addition, the thin film deposition apparatus according to the present invention further includes a first intake system 300 adapted to provide a first process gas required for a first thin film deposition mode, and a second intake system 400 coupled to the plasma generation system. Suitable for providing a second process gas required for a second thin film deposition mode. The cavity 100 further includes a vapor deposition shower head 150 including a first-order air disk 150A and a second-order air disk 150B disposed on the upper cavity between the carrier 140 and the plasma generating system. Inside the lower part 110B.

Next, please refer to FIG. 2A, which shows the top view of the first order air disc 150A and the second air receiving disc 150B of the sprinkler head 150 as shown in FIG. Figure. As shown in FIG. 2A, the first-order air disk 150A has a first upper surface 150A1 and a first lower surface 150A2, and includes a plurality of first apertures r1 (between 3 mm and 9 mm). A recess 151 is formed on the first upper surface 150A1 at a distance from each other at a first distance d1, and each of the first recesses 151 includes a first exhaust hole 153 extending through the first air plate 150A to the first lower surface. 150A2 and having a second aperture r2 (between 0.5 mm and 2.5 mm); and a plurality of second pockets 152 having a third aperture r3 (between 5 mm and 15 mm), mutually mutually at a second distance d2 The spacers are formed on the first upper surface 150A1, and each of the second recesses 152 includes a second exhaust hole 154 extending through the first lower surface 150A2 and having a fourth aperture r4 (between 0.5 mm and 2.5 mm). . Wherein, the first recess 151 and the second recess 152 are staggered with each other.

Similarly, as shown in FIG. 2A, the second-order air disk 150B has a second upper surface 150B1 and a second lower surface 150B2, and the second-stage air disk 150B includes a first process gas inlet 165. Connected to a first air intake system 300 (as shown in FIG. 1) to introduce a first process gas when the first thin film deposition mode is activated. The second-stage air disk 150B further includes a main gas supply pipe 160 connected to the first process gas inlet 165 and disposed in the second-order gas disk 150B, and a plurality of branch gas supply pipes 162 spaced apart from each other and the main gas supply The tubes 160 are connected and disposed in the second-order gas disk 150B. The plurality of manifolds 164 are formed on the main gas supply pipe 160 and the branch gas supply pipes 162. The manifolds 164 are spaced apart from each other by a first distance d1. And penetrating the second lower surface 150B2 of the second-order air disk 150B, and each of the manifolds 164 corresponds to each of the first-order air plates 150A. The first pocket 151. When the first thin mode deposition mode is activated, in the atomic layer deposition mode in this embodiment, the first process gas enters the main gas supply pipe 160 and the branch gas supply pipe 162 through the first process gas inlet 165, and then is connected. The manifold 164 of the main gas supply pipe 160 and the branch gas supply pipe 162 is introduced into the first pocket 151, and then uniformly sprayed onto the surface of the substrate 200 through the first exhaust hole 153 in each of the first pockets 151.

In addition, the second-order air disk 150B further includes a plurality of first openings 166 formed in a region other than the main gas supply pipe 160 and the branch gas supply pipes 162. The first openings 166 are arranged at a distance from each other by a second distance d2. The second upper surface 150B1 and the second lower surface 150B2, and each of the first openings 166 respectively corresponds to each of the second recesses 152 on the first-order air disk 150A, such that the electricity generated when the second thin film deposition mode is activated The slurry may enter the second cavity 152 through the first opening 166 to form a plurality of matrix-arranged plasma sources, and uniformly spray the plasma onto the substrate 200 via the second exhaust hole 154 in each of the second recesses 152. surface.

Next, please refer to FIG. 2B, which shows the first-stage air disc 150A shown in FIG. 2A and the exhaust air of the first exhaust hole 153 and the second exhaust hole 154 located on the BB' section line. Schematic diagram of the direction. The first exhaust hole 153 and the second exhaust hole 154 located on the B-B' section line are inclined at an acute angle β with respect to the second normal line N2 of the vertical first-order air disk 150A. And the horizontal direction component is perpendicular to the first exhaust hole 153 and the second exhaust hole 154 and the line formed by the central axis normal Nc of the first order air plate 150A, and the first exhaust hole 153 located at other positions. And the second exhaust hole 154 is also disposed in the first step in the same manner On disk 150A. In one embodiment, 30° ≦ β ≦ 60°. In this embodiment, each of the first exhaust holes 153 and each of the second exhaust holes 154 is exhausted by an acute angle β with respect to the normal line N2 of the vertical first-order air disk 150A. Outside the surface of the substrate 200, its horizontal exhaust direction component forms a clockwise vortex so that the reactive gas can be more evenly distributed within the cavity 100. Although the vortex of the present embodiment is rotated in the clockwise direction, those skilled in the art will be able to adjust the exhaust directions of the first exhaust hole 153 and the second exhaust hole 154 as needed to make the first exhaust holes. The horizontal exhaust direction component of 153 and each of the second exhaust holes 154 forms a vortex that rotates counterclockwise.

Next, please refer to FIG. 2C, which shows that the first-order air disc 150A and the second-order air disc 150B as shown in FIG. 2A are combined into a vapor deposition head 150, and along the section line B-B. 'The schematic diagram of the profile presented. As shown in FIG. 2C, the respective manifolds 164 connected to the main gas supply pipe 160 or the branch gas supply pipe 162 located on the second-stage air disk 150B are aligned to extend into the first-order air disk 150A. In each of the first recesses 151, when the first thin film deposition mode is activated, the first process gas is uniformly sprayed on the substrate surface via the first exhaust hole 153; the first opening 166 is located on the second-order gas disk 150B. Aligned with the second pocket 152 located on the first-order disc 150A, and when the second thin film deposition mode is activated, the second process housed in the inlet chamber 180 (shown in FIG. 1) The gas 190 (as shown in FIG. 5) is passed through the plasma gas dispersing disc 170 as shown in FIG. 1, to generate the plasma required for the second thin film deposition mode, and then to pass through the second order gas disk 150B. An opening 166 enters the second pocket 152 to form a plurality of matrix rows The plasma source of the column is then evenly sprayed onto the surface of the substrate 200 via the second vent 154 in each of the second pockets 152.

As described above, the exhaust directions of the first exhaust hole 153 and the second exhaust hole 154 are both inclined by an acute angle β with respect to the normal N1 of the vertical first-order air disk 150A. In addition, in order to make the first exhaust hole 153 more efficient in spraying the first process gas, the first exhaust hole 153 may be designed to have a sectional area as close to the first lower surface 150A2 as shown in FIG. 2C. The distance is gradually increased such that the first exhaust hole 153 has a large spray coverage area, and the first process gases ejected from the adjacent first exhaust holes overlap each other. Likewise, the second venting opening 153 can also be designed with the same principle.

Next, referring to FIG. 2D, there is shown a cross-sectional enlarged view of the plasma gas dispersion disk 170 shown in FIG. 1, which includes a first plasma gas dispersion disk 170A and a second plasma gas dispersion. The disk 170B and a third plasma gas dispersion disk 170C are sandwiched and fixed by a quartz fixing ring 178, wherein the first plasma gas dispersion disk 170A and the third plasma gas dispersion disk 170C are made of an insulating material (for example, quartz). Composition. The first plasma gas dispersion disk 170A includes a plurality of third rows arranged at a second distance d2 and spaced apart from each other and having a fifth aperture r5 (between 0.5 mm and 2.5 mm) and penetrating through the first plasma gas dispersion disk 170A. The air hole 172; the second plasma gas dispersing disc 170B is disposed under the first plasma gas dispersing disc 170A, and the second plasma gas dispersing disc 170B includes a plurality of second spaced distances d2 spaced apart from each other and having a sixth aperture r6 (between 0.5 mm and 5 mm) and through the fourth venting opening 174 of the second plasma gas dispersing disc 170B, each The fourth exhaust hole 174 corresponds to each of the third exhaust holes 172; the third plasma gas dispersing disc 170C is disposed on the second plasma gas dispersing disc 170B and the second step gas of the vapor deposition head 150 Between the discs 150B, and the third plasma gas dispersing disc 170C includes a plurality of bias electrodes 177 arranged at a second distance d2 and spaced through the third plasma gas dispersing disc 170C, and a seventh aperture r7 is disposed therein. The fifth venting opening 176. Further, the diameter of the third exhaust hole 172 is smaller than the diameter of the fourth exhaust hole 174.

Next, please refer to FIG. 2E and FIG. 2E'. 2E is a detailed cross-sectional view of the bias electrode 177 and the plasma generating portion, wherein the bias electrode 177 includes a metal electrode 177B and dielectric layers 177A, 177C sandwiching the metal electrode 177B. As shown in FIG. 2E, when the plasma gas passes through the bias electrode 177 through the fifth vent hole 176, a bias voltage is applied by the metal electrode 177B, followed by a second-order gas disk of the shower head 150 for vapor deposition. The first opening 166 on the 150B enters the second recess 152 on the first-order air disk 150A to form a plurality of matrix-arranged plasma sources, and then through the second exhaust hole 154 in each of the second recesses 152. Spray the plasma evenly. Fig. 2E shows a cylindrical plasma generating portion whose electrode 177B is a planar electrode. In other embodiments according to the present invention, the cylindrical plasma generating portion of the planar electrode may be modified to be a concentric spherical upper and lower electrode, as shown in FIG. 2E', and the bowl-shaped plasma generating portion is formed at the same potential. The distance D from each point on the surface to the electrode 177B is equal, and has a relatively uniform potential distribution compared with the cylindrical plasma generating portion, the plasma density is relatively uniform, and the heat generated by the plasma reaction can be uniformly dispersed. It is not easy to concentrate on a specific point, and can eliminate the dead angle around the bottom of the cylinder, reducing the generation of particles in the process application.

Next, referring to Fig. 2F, there is shown a schematic cross-sectional view of the main gas supply pipe 160 and the manifold 164 which are shown along the A-A' section line of the second-order air disk 150B shown in Fig. 2A. As shown in FIG. 2F, in order to solve the disadvantage that the flow rate of the first process gas is uneven in the main gas supply pipe 160, the main gas supply pipe 160 disclosed in the present invention is adjacent to the second gas disk 150. The lower surface 150B2 has a first inclined pipe wall 161 such that the cross section of the main gas supply pipe 160 varies with the intake port 165.

Increase and gradually decrease. The first inclined pipe wall 161 has a plurality of air holes 163 spaced apart from each other by a first distance d1, and the manifold 164 which is originally perpendicular to the second upper surface 150B1 and connected to the air holes 163 is further configured to include a bent portion. 164A and a curved portion 164' of a vertical portion 164B, wherein the curved portion 164A is separated from the first normal line N1 passing through the second upper surface 150B1 by an acute angle α, and the vertical portion 164B is perpendicular to the second upper surface 150B1. This makes it easier for the first process gas entering the main gas supply pipe 160 to flow into the curved portion 164A. In addition, a baffle 167 may be formed on the downwind of the vent of the manifold 164 and/or the curved manifold 164' to increase the number of entries into the manifold 164 and/or the curved manifold 164'. A process gas flow. Similarly, the branch gas supply pipe 162 can also be designed in the above manner, and will not be described herein.

Next, please refer to FIG. 3, which shows a plan view of the carrier 140 shown in FIG. 1. As shown in Figure 3, the surface of the carrier 140 carries A substrate 200 is deposited on the surface of the substrate, and the carrier 140 includes a gas barrier ring 145 having an annular shape surrounding the periphery thereof. In another embodiment, the choke ring 145 is spaced a distance from the carrier 140. The choke ring includes a plurality of pumping passages 148 spaced apart from each other, and the pumping passages 148 may be disposed on the upper surface or the lower surface of the choke ring 145 and recessed in the annular body, and each of the pumping passages The direction of 148 corresponds to the tangential direction of the vortex flow. In other words, the direction of each of the drawing channels 148 is at an angle to the radial direction of the center of the annular body of the gas block ring 145, thereby causing the plasma of the first process gas or the second process gas to be pumped. When the system is in operation, it is evacuated from the cavity 100 via the drawing flow path 148, thereby increasing the effect of clockwise or counterclockwise vortex caused by the first exhaust hole 153 and/or the second exhaust hole being exhausted, such as As indicated by the two circular arc arrows inside the annular body, the vortex flow generally flows around the center of the annular body, so that the reaction gas can be more evenly distributed in the cavity 100.

As shown in FIG. 1, the first air intake system 300 disclosed in this embodiment includes a first precursor gas supply source 310, a second precursor gas supply source 320, and a clean gas supply required for the atomic layer deposition mode. The source 330, the first process gas conduit 125, one end of which is connected to the first process gas inlet 165 of the second-order gas disk 150B, and the other phase is connected to a high-pressure control valve 350, and a first high-pressure pipe 315 is connected to Between the first precursor gas supply source 310 and the high pressure control valve 350, a second high pressure pipe 325 is connected between the second precursor gas supply source 320 and the high pressure control valve 350, and a third high pressure pipe 335 is connected to the clean The gas supply source 330 is between the high pressure control valve 350. Wherein, the first air intake system 300 The first precursor gas, the second precursor gas, or the clean gas supply is switched into the first process gas inlet 165 by controlling the high pressure control valve 350. The clean gas may be selected from inert gases that do not chemically react with the first precursor gas and the second precursor gas, such as nitrogen or blunt gas.

Referring to FIG. 4, there is shown a schematic diagram of process gas flow in a thin film deposition apparatus in accordance with the present invention for performing a first thin film deposition mode. As described above, the first thin film deposition mode disclosed by the present invention is an atomic layer deposition process, and when the first thin film deposition mode is activated, the first precursor gas supply source 310 in the first intake system 300 is turned on, so that A precursor gas enters the first process gas conduit 125 from the first high pressure pipe 315 via the high pressure control valve 350, and then enters the gas inlet 165 of the second stage gas disk 150B in the vapor deposition head 150, and then passes through The main gas supply pipe 160 and the branch gas supply pipe 162, and introduce the first precursor gas into the first pocket 151 by the manifold 164 connected to the main gas supply pipe 160 and the branch gas supply pipe 162, and then pass each The first exhaust hole 153 in the first recess 151 causes the first precursor gas to be uniformly sprayed on the surface of the substrate 200. Thereafter, the first precursor gas supply source 310 is turned off first, then the clean gas supply source 330 is turned on, and the clean gas is introduced into the vapor deposition head 150 for vapor deposition along the third high pressure pipe 335 in the manner as described above. The air pump 500 causes the residual first precursor gas and the clean gas to be drawn out of the cavity 100 via the exhaust pipe 550. Next, the clean gas supply source 330 is turned off first, and then the second precursor gas supply source 320 is turned on, so that the second precursor gas supply source 320 guides the second precursor gas along the second high pressure pipe 325 in the manner described above. The inside of the vapor deposition head 150 is sprayed onto the surface of the substrate 200 to which the first precursor is attached, and the second precursor is reacted with the first precursor on the surface of the substrate 200 to form a desired film. Finally, the second precursor gas supply source 320 is turned off, then the clean gas supply source 330 is turned on, and the clean gas is introduced into the vapor deposition head 150 along the third high pressure pipe 335 in the manner described above, and the pumping is started. The air pump 500 causes the residual second precursor gas and the clean gas to be withdrawn from the cavity 100 via the exhaust pipe 550, and an atomic layer deposition process cycle can be completed. The number of atomic layer deposition process cycles described above can be repeated multiple times depending on the desired film thickness.

As shown in FIG. 1 , the second intake system 400 disclosed in this embodiment includes a second process gas supply source 410 , a fourth high pressure pipe 415 , and a high pressure control valve 450 . By controlling the high pressure control valve 450 , The second process gas is delivered to the second process gas conduit 115 of the inlet chamber 180 via the fourth high pressure pipe 415 when the second thin film deposition mode is activated, and then enters the intake chamber 180.

Referring to FIG. 5, there is shown a schematic diagram of process gas flow in a thin film deposition apparatus in accordance with the present invention for performing a second thin film deposition mode. As described above, the second thin film deposition mode disclosed by the present invention is a plasma-assisted chemical vapor deposition process, and when the second thin film deposition mode is activated, the second process gas supply source of the second intake system 400 is turned on, And the second process gas enters the second process gas conduit 115 via the fourth high pressure pipe 415 under the control of the high pressure control valve 450, and is input into the intake chamber 180. The second process gas 190 entering the intake chamber 180 passes through the first plasma gas dispersion disk 170A through the third exhaust hole 172, and then passes through The fourth exhaust hole 174 passes through the second plasma gas dispersion disk 170B, then enters the fifth exhaust hole 176 of the third plasma gas dispersion disk 170C and is biased by the bias electrode 177. Next, the first opening 166 on the second-order air disk 150B of the vapor deposition head 150 enters the second cavity 152 on the first-order air disk 150A to form a plurality of matrix-arranged plasma sources, and then The plasma is evenly sprayed onto the surface of the substrate 200 through the second venting opening 154 in each of the second recesses 152 to form a desired plasma-assisted chemical vapor deposited film. The second process gas of the present embodiment includes, for example, one of silane, argon, hydrogen, oxygen, or a combination thereof.

6A and 6B are views showing the structure of each step of forming a semiconductor element by using the thin film deposition apparatus of the present invention.

Referring to FIG. 6A, a method of forming a semiconductor device includes providing a semiconductor substrate 10, and forming an epitaxial layer 1000 on the semiconductor substrate 10, including a semiconductor substrate 10, a buffer layer 20, and a first semiconductor layer. 30. An active layer 40 and a second semiconductor layer 600. In this embodiment, the first semiconductor layer 30 includes an n-type gallium nitride layer (n-GaN), the second semiconductor layer 600 includes a p-type gallium nitride layer (p-GaN), and the active layer 40 includes a gallium nitride series. The multiple Quantum Well (MQW) formed by the material is used to emit light. Then, using the thin film deposition apparatus 100 of the present invention, a metal layer 620 having a thickness of 1 to 10 nm is deposited on the surface of the second semiconductor layer 600 in a first thin film deposition mode, for example, the aforementioned atomic layer deposition method (ALD). Layer 620 is in ohmic contact with second semiconductor layer 600. The material of the metal layer 620 is optional From copper, foil or nickel. And then using the second thin film deposition apparatus of the present invention in a second thin film deposition mode, such as the aforementioned plasma assisted chemical vapor deposition (PECVD), at a temperature of less than 350 ° C, on the surface of the metal layer 620 described above. A graphene layer 640 having a thickness of 1 to 5 nm is deposited to form a composite current diffusion layer comprising a metal layer 620 and a graphene layer 640, wherein the metal layer 620 is in ohmic contact with the graphene layer 640 for improving lateral current dispersion. Ability.

Next, referring to FIG. 6B, the thin film deposition removes a portion of the metal layer 620, the graphene layer 640, the second semiconductor layer 600, and the active layer 40 by using a conventional lithography and etching process to expose the first semiconductor layer 30, and then A first electrode 61 and a second electrode 62 are respectively formed on the graphene layer 640 and the exposed first semiconductor layer 30 to introduce an external current.

7A to 7C are views showing the structure of each step of forming a semiconductor element by using the thin film deposition apparatus of the present invention.

Referring to FIG. 7A, the method for forming a semiconductor device includes providing a semiconductor substrate 10, and forming an epitaxial layer 1000 on the semiconductor substrate 10, sequentially including a buffer layer 20, a first semiconductor layer 30, and an active layer. 40 and a second semiconductor layer 600. In this embodiment, the first semiconductor layer 30 includes an n-type gallium nitride layer (n-GaN), and the active layer 40 includes a multiple quantum well structure (MQW) formed by a material of a gallium nitride series. The light is emitted, and the second semiconductor layer 600 includes a p-type gallium nitride layer (p-GaN). Then, using the thin film deposition apparatus 100 of the present invention, the surface of the second semiconductor layer 600 is In a thin film deposition mode, for example, a metal layer 620 having a thickness of 1 to 10 nm is deposited by the aforementioned atomic layer deposition method (ALD). The material of the metal layer 620 can be selected from copper, foil or nickel.

Next, please refer to FIG. 7B, and then use the thin film deposition apparatus of the present invention in a second thin film deposition mode, such as the aforementioned plasma assisted chemical vapor deposition (PECVD), at a temperature of about 700 to 1000 degrees C. Under the condition, the carbon atoms are passed through the metal layer 620 to reach the surface of the second semiconductor layer 600, and a graphene layer 650 having a thickness of 1 to 5 nm is formed between the second semiconductor layer 600 and the metal layer 620, wherein the graphite The olefin layer 650 forms an ohmic contact with the second semiconductor layer 600.

Finally, referring to FIG. 7C, the metal layer 620 is removed by an etching process to expose the graphene layer 650 to form a transparent current spreading layer for improving the lateral current spreading capability. Then, a portion of the graphene layer 650, the second semiconductor layer 600, and the active layer 40 are removed by a conventional lithography and etching process to expose the first semiconductor layer 30, followed by the graphene layer 650 and the exposed first A first electrode 61 and a second electrode 62 are formed on the semiconductor layer 30 to introduce an external current, respectively.

In summary, the novel embodiment has provided a sprinkler head suitable for atomic layer deposition and plasma assisted chemical vapor deposition, and a thin film deposition device including a sprinkler head, which can switch between different deposition modes in the same cavity as needed. The thin film deposition process solves the shortcomings of existing thin film deposition processes that cannot be in different modes in the same cavity.

Although the present invention has been disclosed in the preferred embodiments as described above, it is not intended to limit the present invention, and any of the above-described various embodiments may be modified and combined without departing from the spirit and scope of the present invention. example.

100‧‧‧film deposition apparatus

110‧‧‧Upper cavity

110A‧‧‧Upper upper body parts

110B‧‧‧Upper upper part

115‧‧‧Second process gas conduit

120‧‧‧ lower cavity

125‧‧‧First Process Gas Pipeline

130‧‧‧Fixed devices

135‧‧‧ bias electrode

140‧‧‧Hosting

145‧‧‧ gas barrier

150‧‧‧spray head for vapor deposition

150A‧‧‧first air disc

150B‧‧‧second order air disc

151‧‧‧ first recess

152‧‧‧Second pocket

153‧‧‧First vent

154‧‧‧Second vent

160‧‧‧Main gas supply pipe

162‧‧‧Branch gas supply pipe

164‧‧‧Management

165‧‧‧First process gas inlet

166‧‧‧ first opening

170‧‧‧ Plasma gas dispersion plate

170A‧‧‧First plasma gas dispersion plate

170B‧‧‧Second plasma gas dispersion plate

170C‧‧‧The third plasma gas dispersion plate

172‧‧‧ third vent

174‧‧‧fourth vent

176‧‧‧ fifth vent

177‧‧‧ bias electrode

178‧‧‧Quartz retaining ring

180‧‧‧Intake room

190‧‧‧Second process gas

200‧‧‧Substrate

300‧‧‧First gas supply system

310‧‧‧ First source of precursor gas

315‧‧‧First high pressure pipe

320‧‧‧Second precursor gas supply

325‧‧‧Second high pressure tube

330‧‧‧Clean gas supply

335‧‧‧ third high pressure pipe

350‧‧‧High pressure control valve

400‧‧‧Second gas supply system

410‧‧‧Second process gas supply

415‧‧‧ fourth high pressure pipe

450‧‧‧High pressure control valve

500‧‧‧Air pump

550‧‧‧Exhaust pipe

900‧‧‧ cavity

Claims (10)

A drainage element for film deposition, comprising: an annular body comprising an upper surface and a lower surface opposite to the upper surface; and a plurality of extraction channels located on the upper surface or the lower surface and recessed in the ring a body, wherein a first process gas flows out to the outside of the annular body through the pumping flow paths; wherein the pumping flow prop has an angle of the drawing flow path and an angle between a center of the annular body and a circumference of the annular body . The drainage element for film deposition according to claim 1, wherein the first process gas forms a swirling airflow inside the annular body, and substantially flows around a center of the annular body. The drainage element for film deposition according to claim 2, wherein the direction of the extraction flow path corresponds to a direction of the line of the vortex flow. A thin film deposition apparatus comprising: a cavity; a carrier disposed in the cavity for carrying a substrate; and a drainage component for film deposition, selected from the film of claim 1 to 3 Any one of the drainage elements for deposition is disposed above the carrier in the cavity. The thin film deposition apparatus of claim 4, wherein the drainage element is attached or spaced apart from the carrier. The thin film deposition apparatus of claim 4, further comprising a sprinkler head disposed above the carrier in the cavity for distributing the first process gas in the cavity. The thin film deposition apparatus of claim 4, further comprising a pumping system, wherein the pumping system operates to draw the first process gas away from the cavity via the pumping channels. The thin film deposition apparatus of claim 6, wherein the sprinkler head further provides a second process gas for forming a plasma in the cavity. The thin film deposition apparatus of claim 8, wherein the first process gas is used for atomic layer deposition (ALD) in the cavity, and the plasma is used for plasma-assisted chemical vapor phase in the cavity. Deposition (PECVD). The thin film deposition apparatus of claim 6, wherein the sprinkler head comprises a plurality of first exhaust holes and a plurality of second exhaust holes, the first exhaust holes and the second exhaust holes The aperture size is different.