TWM512591U - Thin-film deposition apparatus - Google Patents

Abstract

A showerhead used for thin-film deposition comprises a first-level gas disk, and a second-level gas disk connecting the first-level gas disk, wherein the first-level gas disk comprises multiple first recesses with a first diameter, and each of the first recesses comprises a first gas-dispensing hole with a second diameter through the first gas disk, and wherein the second gas disk comprises a gas inlet for providing a first process gas flowing through the gas inlet into the second gas disk, and a gas conduit connecting the gas inlet and buried in the second gas disk for the first process gas flowing to the multiple first recesses through the gas conduit and being sprayed outside the first gas-dispensing holes .

Description

Thin film deposition device

The present invention relates to a showerhead for film deposition and a thin film deposition apparatus including a showerhead, and more particularly to a multi-mode showerhead and a multi-mode thin film deposition apparatus.

In the conventional fabrication of thin film light-emitting diodes, Molecular Beam Epitaxy (MBE), Chemical Vapor Deposition (CVD), and Plasma Enhanced Chemical Vapor Deposition (Plasma Enhanced Chemical) can be used. Vapor Deposition; PECVD), Atomic Layer Epitaxy (ALE) or Atomic Layer Deposition (ALD) to grow various films required to form a light-emitting diode. Among them, the use of an atomic layer deposition process and a plasma-assisted chemical vapor deposition process to grow various films required to form a light-emitting diode has gradually become a trend.

For the current process technology, the atomic layer deposition process and the plasma-assisted chemical vapor deposition process belong to two different process chambers, which not only has high equipment cost, but also does not complete the packaged light during the component transfer process. The polar components are exposed to the environment, resulting in a reduction in film quality.

A sprinkler head for film deposition, comprising a first-order air disc; and a second-order air disc connecting the first-order air disc, wherein the first-order air disc comprises a plurality of first recesses having a first aperture a hole, and each of the first recesses includes a first exhaust hole having a second aperture extending through the first air disk; wherein the second air disk includes an air inlet for a first process The gas is sent into the second-order air disk via the air inlet, and a gas supply line is connected to the air inlet and embedded in the second-order air disk, so that the first process gas can pass through the gas supply line The first recesses are entered and evenly sprayed through the first venting opening in each of the first recesses.

A thin film deposition apparatus includes a cavity; a carrier is located in the cavity; and a showerhead for film deposition is located in the cavity and above the carrier.

The manner in which the novel embodiments are made and used will be described in detail below. It should be noted, however, that the present invention provides many new concepts that can be applied, which can be implemented in a variety of specific forms. The specific embodiments discussed herein are merely illustrative of specific ways to make and use the present invention and are not intended to limit the scope of the invention. Example:

First, referring to Fig. 1, there is shown a schematic cross-sectional view of a thin film deposition apparatus according to the present invention. As shown in FIG. 1, the thin film deposition apparatus according to the present invention includes a cavity 900 which is formed by a lower cavity 120, an upper cavity 110 above the upper cavity 110, and a fixing device 130 located in the lower cavity. Between 120 and the upper cavity 110, the lower cavity 120 and the upper cavity 110 are connected and fixed. The upper cavity 110 comprises an upper cavity upper part 110A and an upper cavity lower part 110B. The cavity 900 includes a carrier 140 disposed in the lower cavity 120 for carrying a substrate 200, a plasma generating system disposed above the carrier 140 and located in the upper cavity upper component 110A, including An inlet chamber 180 and a plasma gas dispersion tray 170. In addition, the thin film deposition apparatus according to the present invention further includes a first air intake system 300 adapted to provide a first process gas required for a first thin film deposition mode; and a second air intake system 400 coupled to the plasma A generating system adapted to provide a second process gas required for a second thin film deposition mode. The cavity 900 further includes a vapor deposition shower head 150, which includes a first-order air disk 150A and a second-order air disk 150B disposed under the upper cavity between the carrier 140 and the plasma generating system. Inside component 110B.

Next, referring to FIG. 2A, there is shown a plan view of the first-order air disc 150A and the second-stage air disc 150B of the sprinkler head 150 for vapor deposition as shown in FIG. 1. As shown in FIG. 2A, the first-order air disk 150A has a first first upper surface 150A1 and a first lower surface 150A2, and includes a plurality of first concaves having a first aperture r1 (between 3 mm and 9 mm). The holes 151 are formed on the first upper surface 150A1 at a distance from each other by a first distance d1, and each of the first recesses 151 includes a first exhaust hole 153 extending through the first air plate 150A to the first lower surface 150A2. a second aperture r2 (between 0.5 mm and 2.5 mm); and a plurality of second pockets 152 having a third aperture r3 (between 5 mm and 15 mm) spaced apart from each other by a second distance d2 Formed on the first upper surface 150A1, and each of the second recesses 152 includes a second exhaust hole 154 extending through the first air plate 150A to the first lower surface 150A2 and having a fourth aperture r4 (between 0.5 mm and 2.5) Between mm). Wherein, the first recess 151 and the second recess 152 are staggered with each other.

Similarly, as shown in FIG. 2A, the second-order air disk 150B has a second upper surface 150B1 and a second lower surface 150B2, and the second-stage air disk 150B includes a first process gas inlet 165. Connected to a first air intake system 300 (as shown in FIG. 1) to introduce a first process gas when the first thin film deposition mode is activated. The second-stage air disk 150B further includes a main gas supply pipe 160, and is connected to the first process gas inlet 165 and disposed on the second-order gas disk 150B, and a plurality of branch gas supply pipes 162 spaced apart from each other, respectively The gas supply pipe 160 is connected to and disposed on the second-stage gas disk 150B, and a plurality of manifolds 164 are formed on the main gas supply pipe 160 and the branch gas supply pipe 162. The manifolds 164 are spaced apart from each other by a first distance d1 and penetrate through each other. The second order air plate 150B to the second lower surface 150B2, and each manifold 164 corresponds to each of the first pockets 151 on the first order air plate 150A. When the first thin mode deposition mode is activated, in the atomic layer deposition mode in this embodiment, the first process gas enters the main gas supply pipe 160 and the branch gas supply pipe 162 through the first process gas inlet 165, and then is connected. The manifold 164 of the main gas supply pipe 160 and the branch gas supply pipe 162 is introduced into the first pocket 151, and then uniformly sprayed onto the surface of the substrate 200 through the first exhaust hole 153 in each of the first pockets 151.

In addition, the second-order air disc second-stage air disc 150B further includes a plurality of first openings 166 formed in a region other than the main gas supply pipe 160 and the branch gas supply pipe 162, and the first openings 166 are mutually mutually connected by the second distance d2. The first array of openings 164 extends through the second upper surface 150B1 and the second lower surface 150B2, and each of the first openings 166 corresponds to each of the second recesses 152 on the first stepped disk 150A, and the plurality of first openings 166 correspond to The plurality of second recesses 152 form a plurality of matrix-arranged plasma reaction chambers. When the second thin film deposition mode is activated, the plasma can be generated in a plurality of plasma reaction chambers and passed through each of the second recesses 152. The second exhaust hole 154 uniformly sprays the plasma onto the surface of the substrate 200.

Next, please refer to FIG. 2B, which shows that the first-order air disc 150A and the second-order air disc 150B as shown in FIG. 2A are combined into a vapor deposition head 150, and along the section line B-B. 'The schematic diagram of the profile presented. As shown in FIG. 2B, the respective manifolds 164 of the main gas supply pipe 160 or the branch gas supply pipe 162 connected to the second-stage gas disk 150B are aligned to extend into the first-order gas disk 150A. In each of the first recesses 151, when the first thin film deposition mode is activated, the first process gas is uniformly sprayed on the substrate surface via the first exhaust hole 153; the first opening 166 located on the second-order air disk 150B is Aligned with the second pocket 152 located on the first-order disc 150A, and when the second thin film deposition mode is activated, the second process gas contained in the inlet chamber 180 (as shown in FIG. 1) is 190 (as shown in FIG. 5), through the plasma gas dispersing disc 170 as shown in FIG. 1, entering a plurality of first openings 166 and corresponding plurality of second recesses 152 to form a plurality of matrix-arranged plasmas The reaction chamber generates plasma required for the second thin film deposition mode in a plurality of matrix-arranged plasma reaction chambers, and then uniformly sprays the plasma onto the substrate via the second exhaust holes 154 in each of the second recesses 152. 200 surface.

As shown in FIG. 2C, there is shown a cross-sectional enlarged view of the plasma gas dispersion disk 170 as shown in FIG. 1, which includes a first plasma gas dispersion disk 170A, a second plasma gas dispersion disk 170B, and A third plasma gas dispersion disk 170C is sandwiched and fixed by a quartz fixing ring 178, wherein the first plasma gas dispersion disk 170A and the third plasma gas dispersion disk 170C are each made of an insulating material such as quartz. The first plasma gas dispersion disk 170A includes a plurality of third rows arranged at a second distance d2 and spaced apart from each other and having a fifth aperture r5 (between 0.5 mm and 2.5 mm) and penetrating through the first plasma gas dispersion disk 170A. The air hole 172; the second plasma gas dispersing disc 170B is disposed under the first plasma gas dispersing disc 170A, and the second plasma gas dispersing disc 170B includes a plurality of second holes d2 spaced apart from each other and having a sixth aperture R6 (between 0.5 mm and 5 mm) and penetrating through the fourth exhaust hole 174 of the second plasma gas dispersing disc 170B, each fourth exhaust hole 174 corresponding to each of the third exhaust holes 172; The plasma gas dispersion disk 170C is disposed between the second plasma gas dispersion disk 170B and the second-order gas disk 150B of the vapor deposition head 150, and the third plasma gas dispersion disk 170C includes a plurality of The distance d2 is spaced apart from each other and penetrates the bias electrode 177 of the plasma gas dispersion disk, and is internally provided with a fifth vent hole 176 having a seventh aperture r7. Further, the diameter of the third exhaust hole 172 is smaller than the diameter of the fourth exhaust hole 174.

Next, please refer to the 2D and 2D' drawings. 2D is a detailed cross-sectional view of the bias electrode 177 and the plasma reaction chamber, wherein the bias electrode 177 includes a metal electrode 177B and an electrically insulating dielectric layer 177A for sandwiching the metal electrode 177B. 177C. As shown in FIG. 2D, the metal electrode 177B is externally connected to a voltage source (not shown). The first-order air disk 150A and the second-order air disk 150B are made of a metal material and grounded, and the electrically insulating dielectric layer 177C is used. Electrically insulated from the metal electrode 177B, when the second process gas enters the first opening 166 and the plasma chamber corresponding to the second recess 152 through the fifth exhaust hole 176, the metal electrode 177B of the external voltage source is grounded A bias voltage provided by the first-order air disk 150A and the second-order air disk 150B forms a plasma for the second process gas, and then uniformly sprays the plasma through the second exhaust hole 154 in each of the second recesses 152. come out. Figure 2D shows a cylindrical plasma reaction chamber with electrode 177B being a planar electrode. In other embodiments according to the present invention, the cylindrical plasma reaction chamber of the planar electrode can be modified to be a concentric spherical upper and lower electrode, as shown in FIG. 2D', forming a bowl-shaped plasma reaction chamber at the same potential. The distance D from each point on the surface to the electrode 177B is equal. Compared with the cylindrical plasma reaction chamber, the potential distribution is relatively uniform, the plasma density is relatively uniform, and the heat generated by the plasma reaction can be uniformly dispersed, and it is difficult to concentrate on a specific point. It can eliminate the dead angle around the bottom of the cylinder and reduce the generation of particles during process application.

As shown in FIG. 1, the first air intake system 300 disclosed in this embodiment includes a first precursor gas supply source 310, a second precursor gas supply source 320, and a clean gas supply required for the atomic layer deposition mode. The source 330 and the first process gas conduit 125 are connected at one end to the first process gas inlet 165 of the second-stage gas disk 150B, and the other phase is connected to a high-pressure control valve 350 and a first high-pressure pipe 315. Between the first precursor gas supply source 310 and the high pressure control valve 350, a second high pressure pipe 325, connected between the second precursor gas supply source 320 and the high pressure control valve 350, and a third high pressure pipe 335, It is connected between the clean gas supply source 330 and the high pressure control valve 350. Wherein, the first intake system 300 switches the first precursor gas, the second precursor gas or the clean gas supply into the first process gas inlet 165 by controlling the high pressure control valve 350. The clean gas may be selected from inert gases that do not chemically react with the first precursor gas and the second precursor gas, such as nitrogen or blunt gas.

Next, please refer to FIG. 3, which is a schematic view showing the flow of the first process gas in the thin film deposition apparatus according to the present invention to perform the first thin film deposition mode. As described above, the first thin film deposition mode disclosed by the present invention is an atomic layer deposition process, and when the first thin film deposition mode is activated, the first precursor gas supply source 310 in the first intake system 300 is turned on, so that A precursor gas enters the first process gas conduit 125 from the first high pressure pipe 315 via the high pressure control valve 350, and then enters the gas inlet 165 of the second stage gas disk 150B in the vapor deposition head 150, and then passes through The main gas supply pipe 160 and the branch gas supply pipe 162, and introduce the first precursor gas into the first pocket 151 by the manifold 164 connected to the main gas supply pipe 160 and the branch gas supply pipe 162, and then pass each The first exhaust hole 153 in the first recess 151 causes the first precursor gas to be uniformly sprayed on the surface of the substrate 200. Thereafter, the first precursor gas supply source 310 is turned off, and then the clean gas supply source 330 is turned on, and the clean gas is introduced into the vapor deposition head 150 along the third high pressure pipe 335 in the manner described above, by pumping The air pump 500 causes the residual first precursor gas and the clean gas to be drawn out of the cavity 900 via the exhaust pipe 550. Next, the clean gas supply source 330 is turned off, then the second precursor gas supply source 320 is turned on, and the second precursor gas supply source 320 is introduced into the gas along the second high pressure pipe 325 in the manner described above. The shower head 150 for phase deposition is sprayed on the surface of the substrate 200 to which the first precursor is attached, and the second precursor is reacted with the first precursor on the surface of the substrate 200 to form a desired film. Finally, the second precursor gas supply source 320 is turned off, and then the clean gas supply source 330 is turned on, and the clean gas is introduced into the vapor deposition head 150 for vapor deposition along the third high pressure pipe 335 in the manner as described above. The air pump 500 causes the residual second precursor gas and the clean gas to be drawn out of the cavity 900 via the exhaust pipe 550, and an atomic layer deposition process cycle can be completed. The number of atomic layer deposition process cycles described above can be repeated multiple times depending on the desired film thickness.

As shown in FIG. 1 , the second intake system 400 disclosed in this embodiment includes a second process gas supply source 410 , a fourth high pressure pipe 415 , and a high pressure control valve 450 . By controlling the high pressure control valve 450 , The second process gas is delivered to the second process gas conduit 115 of the inlet chamber 180 via the fourth high pressure pipe 415 when the second thin film deposition mode is activated, and then enters the intake chamber 180.

Next, please refer to FIG. 4, which is a schematic view showing the flow of process gas in the thin film deposition apparatus according to the present invention for performing the second thin film deposition mode. As described above, the second thin film deposition mode disclosed by the present invention is a plasma-assisted chemical vapor deposition process, and when the second thin film deposition mode is activated, the second process gas supply source of the second intake system 400 is turned on, And the second process gas enters the second process gas conduit 115 via the fourth high pressure pipe 415 under the control of the high pressure control valve 450, and is input into the intake chamber 180. The second process gas 190 entering the intake chamber 180 passes through the first plasma gas dispersion disk 170A through the third exhaust hole 172, and then passes through the second plasma gas dispersion disk 170B through the fourth exhaust hole 174, and then passes through the first The fifth venting opening 176 of the three-plasma gas dispersing disc 170C enters the plurality of first openings 166 and the corresponding plurality of second recesses 152 to form a plurality of matrix-arranged plasma reaction chambers, and plasmas arranged in a plurality of matrices The plasma required for the second thin film deposition mode is generated in the reaction chamber, and then the plasma is evenly sprayed on the surface of the substrate 200 through the second exhaust hole 154 in each of the second recesses 152 to form a desired plasma assist. Chemical vapor deposited film. The second process gas of the present embodiment includes, for example, one of silane, argon, hydrogen, oxygen, or a combination thereof.

5A and 5B are cross-sectional processes showing the formation of a composite current spreading layer containing a graphene layer and a metal layer on a semiconductor using the thin film deposition apparatus according to the present invention.

Referring to FIG. 5A, a semiconductor substrate 10 is provided. The semiconductor substrate 10 has an epitaxial layer 1000. The epitaxial layer 1000 includes a semiconductor substrate 10, a buffer layer 20, a first semiconductor layer 30, and an active layer. The layer 40 and the second semiconductor layer 600, wherein the buffer layer 20, a first semiconductor layer 30, an active layer 40, and a second semiconductor layer 600 are sequentially formed on the semiconductor substrate 10. In the present embodiment, the first semiconductor layer 30 includes an n-type gallium nitride layer (n-GaN), and the second semiconductor layer 600 includes a p-type gallium nitride layer (p-GaN). Then, a metal layer 620 having a thickness of less than 10 nm is deposited on the surface of the second semiconductor layer 600 by the first thin film deposition mode (ALD) of the thin film deposition apparatus 100 according to the present invention, and the metal layer 620 is in ohmic contact with the second semiconductor layer 600. The material of the metal layer 620 can be selected from copper, foil or nickel. Then, using a second thin film deposition mode (PECVD) of the thin film deposition apparatus according to the present invention, a graphene layer 640 having a thickness of less than 5 nm is deposited on the surface of the metal layer 620 at a temperature lower than 350 ° C to form a A composite current spreading layer comprising a metal layer 620 and a graphene layer 640, wherein the metal layer 620 is in ohmic contact with the graphene layer 640 for improved lateral current spreading.

Next, referring to FIG. 5B, the thin film deposition removes a portion of the metal layer 620, the graphene layer 640, the second semiconductor layer 600, and the active layer 40 by using a conventional lithography and etching process to expose the first semiconductor layer 30, and then A first electrode 61 and a second electrode 62 are respectively formed on the graphene layer 640 and the exposed first semiconductor layer 30 to introduce an external current.

6A to 6C are cross-sectional processes for forming a current diffusion layer containing graphene on a semiconductor layer by using the thin film deposition apparatus according to the present invention.

Referring to FIG. 6A, a semiconductor substrate 10 is provided. The semiconductor substrate 10 has an epitaxial layer 1000. The epitaxial layer 1000 includes a buffer layer 20, a first semiconductor layer 30, an active layer 40, and a first layer. The semiconductor layer 600 has a buffer layer 20, a first semiconductor layer 30, an active layer 40, and a second semiconductor layer 600 sequentially formed on the semiconductor substrate 10. In the present embodiment, the first semiconductor layer 30 includes an n-type gallium nitride layer (n-GaN), and the second semiconductor layer 600 includes a p-type gallium nitride layer (p-GaN). A metal layer 620 having a thickness of less than 10 nm is then deposited on the surface of the second semiconductor layer 600 using the first thin film deposition mode (ALD) of the thin film deposition apparatus 100 according to the present invention. The material of the metal layer 620 can be selected from copper, foil or nickel.

Next, please refer to FIG. 6B, and then use the second thin film deposition mode (PECVD) of the thin film deposition apparatus according to the present invention to allow carbon atoms to penetrate the metal layer 620 at a temperature of about 700 to 1000 degrees C. A surface of the second semiconductor layer 600 forms a graphene layer 650 having a thickness of less than 5 nm between the second semiconductor layer 600 and the metal layer 620, and the graphene layer 650 forms an ohmic contact with the second semiconductor layer 600.

Finally, referring to FIG. 6C, the metal layer 620 is removed by an etching process to expose the graphene layer 650 to form a transparent current diffusion layer for improving the lateral current spreading capability. Then, a portion of the graphene layer 650, the second semiconductor layer 600, and the active layer 40 are removed by a conventional lithography and etching process to expose the first semiconductor layer 30, followed by the graphene layer 650 and the exposed first semiconductor, respectively. A first electrode 61 and a second electrode 62 are formed on the layer 30 to introduce an external current, respectively.

In summary, the present invention has provided a sprinkler head suitable for atomic layer deposition and plasma assisted chemical vapor deposition, and a thin film deposition apparatus including a sprinkler head, which can be switched between the same cavity and the atomic layer deposition process as needed. The plasma-assisted chemical vapor deposition process solves the shortcomings of the current inability to integrate the atomic deposition process and the plasma-assisted chemical vapor deposition process in the same cavity.

Although the present invention has been disclosed in the preferred embodiments as described above, it is not intended to limit the present invention, and any of the above-described various embodiments may be modified and combined without departing from the spirit and scope of the present invention. example.

<TABLE border="1" borderColor="#000000" width="85%"><TBODY><tr><td> 10 </td><td> Semiconductor substrate</td></tr><tr> <td> 20 </td><td> buffer layer</td></tr><tr><td> 30 </td><td> first semiconductor layer</td></tr><tr> <td> 40 </td><td> active layer</td></tr><tr><td> 600 </td><td> second semiconductor layer</td></tr><tr> <td> 61 </td><td> First electrode</td></tr><tr><td> 62 </td><td> Second electrode</td></tr><tr> <td> 620 </td><td> metal layer</td></tr><tr><td> 640 </td><td> graphene layer</td></tr><tr>< Td> 650 </td><td> graphene layer</td></tr><tr><td> 100 </td><td> thin film deposition apparatus</td></tr><tr>< Td> 900 </td><td> cavity</td></tr><tr><td> 110 </td><td> upper cavity</td></tr><tr><td > 110A </td><td> upper upper part </td></tr><tr><td> 110B </td><td> lower upper part </td></tr>< Tr><td> 115 </td><td> second process gas conduit</td></tr><tr><td> 120 </td><td> lower cavity</td></tr ><tr><td> 125 </td><td> First Process Gas Pipeline</td></tr><tr><td> 130 </td><td> Fixture</td></ Tr><tr><td> 140 </td><td> carrier </ Td></tr><tr><td> 150 </td><td> sprinkler head for vapor deposition</td></tr><tr><td> 150A </td><td> First-order air disc </td></tr><tr><td> 150B </td><td> second-order air disc</td></tr><tr><td> 150A1 </td> <td> first upper surface </td></tr><tr><td> 150A2 </td><td> first lower surface </td></tr><tr><td> 150B1 </ Td><td> second upper surface </td></tr><tr><td> 150B2 </td><td> second lower surface </td></tr><tr><td> 151 </td><td> first recess</td></tr><tr><td> 152 </td><td> second recess</td></tr><tr><td > 153 </td><td> First vent </td></tr><tr><td> 154 </td><td> Second vent </td></tr>< Tr><td> 160 </td><td> main gas supply pipe</td></tr><tr><td> 162 </td><td> branch gas supply pipe</td></tr ><tr><td> 164 </td><td> Manifold</td></tr><tr><td> 165 </td><td> First Process Gas Inlet </td> </tr><tr><td> 166 </td><td> first opening</td></tr><tr><td> 170 </td><td> plasma gas dispersion disk</ Td></tr><tr><td> 170A </td><td> first plasma gas dispersion disk</td></tr><tr><td> 170B </td><td> Two plasma gas dispersion plate</td></tr><tr> <td> 170C </td><td> Third plasma gas dispersion disk</td></tr><tr><td> 172 </td><td> Third vent hole</td>< /tr><tr><td> 174 </td><td> Fourth exhaust hole</td></tr><tr><td> 176 </td><td> Fifth exhaust hole< /td></tr><tr><td> 177 </td><td> Bias electrode</td></tr><tr><td> 177A </td><td> Dielectric layer< /td></tr><tr><td> 177B </td><td> Metal Electrode</td></tr><tr><td> 177C </td><td> Dielectric Layer</ Td></tr><tr><td> 178 </td><td> Quartz retaining ring</td></tr><tr><td> 180 </td><td> Inlet chamber </ Td></tr><tr><td> 190 </td><td> second process gas</td></tr><tr><td> 200 </td><td> substrate </td ></tr><tr><td> 300 </td><td> First gas supply system</td></tr><tr><td> 310 </td><td> First precursor Gas supply source</td></tr><tr><td> 315 </td><td> first high pressure pipe</td></tr><tr><td> 320 </td><td > Second precursor gas supply source</td></tr><tr><td> 325 </td><td> Second high pressure pipe</td></tr><tr><td> 330 < /td><td> Clean Gas Supply Source</td></tr><tr><td> 335 </td><td> Third High Pressure Pipe</td></tr><tr><td> 350 </td><td> High Pressure Control Valve</td></tr ><tr><td> 400 </td><td> Second gas supply system</td></tr><tr><td> 410 </td><td> Second process gas supply </ Td></tr><tr><td> 415 </td><td> Fourth high pressure pipe</td></tr><tr><td> 450 </td><td> High pressure control valve< /td></tr><tr><td> 500 </td><td> Pumps</td></tr><tr><td> 550 </td><td> Pumps</td ></tr><tr><td> </td><td> </td></tr><tr><td> </td><td> </td></tr></TBODY ></TABLE>

Figure 1 is a schematic cross-sectional view showing a thin film deposition apparatus according to the present invention.

Fig. 2A is a plan view showing the first-stage air disk 150A and the second-stage air disk 150B of the shower head 150 for vapor deposition shown in Fig. 1.

Fig. 2B is a schematic cross-sectional view showing the first-stage air disk 150A and the second-order air disk 150B shown in Fig. 2A combined into a vapor deposition head 150 and taken along a section line B-B'.

Fig. 2C is an enlarged cross-sectional view showing the plasma gas dispersion disk 170 shown in Fig. 1.

2D and 2D' are schematic cross-sectional views showing the bias electrode 177 and the plasma reaction chamber of Fig. 2C.

Figure 3 is a schematic illustration of process gas flow in a thin film deposition apparatus in accordance with the present invention for performing a first thin film deposition mode.

Figure 4 is a schematic illustration of process gas flow in a thin film deposition apparatus in accordance with the present invention for performing a second thin film deposition mode.

5A and 5B are cross-sectional processes for forming a composite current diffusion layer containing a graphene layer and a metal layer on a semiconductor by using the thin film deposition apparatus according to the present invention.

6A to 6C are cross-sectional processes for forming a current diffusion layer containing graphene on a semiconductor layer by using the thin film deposition apparatus according to the present invention.

100‧‧‧film deposition apparatus

900‧‧‧ cavity

110‧‧‧Upper cavity

110A‧‧‧Upper upper body parts

110B‧‧‧Upper upper part

115‧‧‧Second process gas conduit

120‧‧‧ lower cavity

125‧‧‧First Process Gas Pipeline

130‧‧‧Fixed devices

140‧‧‧Hosting

150‧‧‧spray head for vapor deposition

150A‧‧‧first air disc

150B‧‧‧second order air disc

151‧‧‧ first recess

152‧‧‧Second pocket

153‧‧‧First vent

154‧‧‧Second vent

160‧‧‧Main gas supply pipe

162‧‧‧Branch gas supply pipe

164‧‧‧Management

165‧‧‧First process gas inlet

166‧‧‧ first opening

170‧‧‧ Plasma gas dispersion plate

170A‧‧‧First plasma gas dispersion plate

170B‧‧‧Second plasma gas dispersion plate

170C‧‧‧The third plasma gas dispersion plate

172‧‧‧ third vent

174‧‧‧fourth vent

176‧‧‧ fifth vent

177‧‧‧ bias electrode

178‧‧‧Quartz retaining ring

180‧‧‧Intake room

190‧‧‧Second process gas

200‧‧‧Substrate

300‧‧‧First gas supply system

310‧‧‧ First source of precursor gas

315‧‧‧First high pressure pipe

320‧‧‧Second precursor gas supply

325‧‧‧Second high pressure tube

330‧‧‧Clean gas supply

335‧‧‧ third high pressure pipe

350‧‧‧High pressure control valve

400‧‧‧Second gas supply system

410‧‧‧Second process gas supply

415‧‧‧ fourth high pressure pipe

450‧‧‧High pressure control valve

500‧‧‧Air pump

550‧‧‧Exhaust pipe

Claims (10)

A shower head for film deposition, comprising: a first-order air disk; and a second-order air disk coupled to the first-order air disk, wherein the first-order air disk comprises a plurality of first holes having a first aperture a recess, and each of the first recesses includes a first exhaust hole having a second aperture extending through the first air disc; wherein the second air disc includes an air inlet for a first a process gas is sent into the second-order air disk via the air inlet, and a gas supply line is connected to the air inlet and embedded in the second-order air disk, so that the first process gas can be supplied through the gas The tubing enters the first pockets and is evenly sprayed through the first venting opening in each of the first pockets. The sprinkler head of claim 1, wherein the first step air disc further comprises a first upper surface, a first lower surface opposite the first upper surface, and a plurality of second surfaces having a third aperture a recess, wherein the plurality of first recesses are formed on the first upper surface at a first distance from each other, and the plurality of second recesses are formed on the first lower surface at a second distance from each other. And each of the second recesses includes a second venting opening extending through the first lower surface and having a fourth aperture, wherein the first recesses and the second recesses are staggered with each other. The sprinkler head of claim 1, wherein the second-order air disc further comprises a plurality of first openings formed outside the gas supply line And the second openings are disposed on the second upper surface and the second lower surface at a second distance from each other, and each of the first openings respectively corresponds to the first Each of the second recesses on the gas disk, such that plasma can enter the second recesses through the first openings to form a plurality of matrix-arranged plasma sources, and via each of the second recesses The second venting hole in the cavity sprays the plasma evenly. The sprinkler head of claim 3, wherein the gas supply line comprises: a main gas supply pipe connected to the air inlet and embedded in the second-order air disk; and a plurality of spaced apart The branch gas supply pipes are respectively connected to the main gas supply pipe and buried in the second-order gas disk, so that the first process gas can be circulated into each of the branch gas supply pipes via the main gas supply pipe. The sprinkler head of claim 4, wherein the gas supply line further comprises a plurality of manifolds formed on the main gas supply pipe and the branch gas supply pipes, the manifolds being at a first distance Arranging at intervals from each other and penetrating the second lower surface, and each of the plurality of manifolds respectively corresponding to each of the first recesses on the first stepped disk, such that the first process gas can enter the first a pocket is evenly sprayed through the first venting opening in each of the first pockets. The sprinkler head of claim 1, wherein the second aperture is larger than the first apertures. The sprinkler head of claim 5, wherein the aperture of each of the first openings is larger than the aperture of each of the manifolds. The sprinkler head of claim 1, wherein the air inlet is connected to a first air intake system. The sprinkler head of claim 1, wherein the first air disc and/or the second air disc are coupled to a grounding wire. A thin film deposition apparatus comprising: a cavity; a carrier located in the cavity; and a sprinkler head selected from the first to eighth aspects of the patent application, located above the carrier.