TWM516783U - Large-area LED lighting device - Google Patents

Description

Large-area light-emitting diode lighting device

The present invention relates to a lighting device, and more particularly to a large-area light emitting diode lighting device.

In recent years, the demand for energy-saving lighting has increased day by day, and the demand for developing large-area lighting devices has also arisen, especially in large-area lighting devices combined with light-emitting diodes (LEDs). Referring to FIG. 1 and FIG. 2, a light-emitting diode light-emitting module 1 disclosed in the invention patent No. I224873 certificate number (hereinafter referred to as the first case 1) approved by Taiwan has a heat-dissipating substrate 11 and a plurality of light-emitting crystals. A chip 12, a plurality of n-type electrodes 13 electrically connected in series to each other on the heat dissipation substrate 11, and a plurality of p-type electrodes 14 electrically connected in series to each other and disposed on the heat dissipation substrate 11. An n-type metal bump 121 and a p-type metal bump 122 are disposed on each of the light-emitting crystal grains 12.

The illuminating crystal grains 12 are formed by a multi-channel dicing process by an epitaxial substrate (not shown) having a luminescent film layer structure on the surface. In the detailed production process of the first case 1, the light-emitting dies 12 are formed by flip chip, and are directly disposed before the first die cutting process has not cut the epitaxial substrate. The n-type metal bumps 121 and the p-type metal bumps 122 on the respective light-emitting crystal grains 12 are the respective n-type electrodes 13 and the p-type electrodes 14 which are respectively disposed on the heat dissipation substrate 11 in alignment. Then, the surface mount technology (SMT) such as electric welding or welding is disposed on the heat dissipation substrate 11 so that the n-type metal bumps 121 and the p-type metal bumps 122 of the respective light-emitting crystal grains 12 are correspondingly coupled to the respective n-type electrodes 13 and Each p-type electrode 14. Finally, a second die cutting process is performed to disconnect the epitaxial substrate and the light emitting dies 12 are spaced apart from each other on the heat dissipation substrate 11. After being electrically conducted, the n-type electrodes 13 electrically connected in series with each other on the heat dissipation substrate 11 and the p-type electrodes 14 electrically connected in series are illuminate the light-emitting dies 12 and generate a large The area of the illuminating area. However, in order to generate a large-area illuminating region, the illuminating dies 12 are required to pass through the first die cutting process, the surface bonding technique, and the second die cutting process to generate a large-area illuminating region. The steps are cumbersome and the manufacturing costs are high.

As can be seen from the above description, improving the structure of the large-area light-emitting diode lighting device to simplify the manufacturing process is a problem to be solved by those skilled in the art.

Therefore, the object of the present invention is to provide a large-area light-emitting diode lighting device.

Therefore, the novel large-area light-emitting diode lighting device comprises an epitaxial substrate, an illuminating film layer structure, and at least one electrode unit. The size of the epitaxial substrate is greater than or equal to 1 吋. The luminescent layer structure includes a first type semiconductor layer disposed on the epitaxial substrate, an active layer disposed on the first type semiconductor layer, and a second type semiconductor layer disposed on the active layer . One dimension of the luminescent film layer structure is greater than or equal to 1 吋 and defines at least one die, and the die protrudes from the first type semiconductor layer toward the second type semiconductor layer, and partially exposes the first A type of semiconductor layer defines a platform for the die. The electrode unit includes a first electrode and a second electrode. The first electrode is electrically connected and disposed on a platform of the die, and the second electrode is electrically connected to the second type semiconductor layer of the die.

The effect of the novel: the epitaxial substrate and the luminescent film layer structure are not cut, so that the crystal grain exhibits a light-emitting area of 1 大于 or more directly on the epitaxial substrate under current conduction, thereby simplifying the manufacturing process, and Reduce manufacturing costs.

2‧‧‧ epitaxial substrate

43‧‧‧First electrode line

3‧‧‧luminescent film structure

31‧‧‧First type semiconductor layer

32‧‧‧ active layer

33‧‧‧Second type semiconductor layer

34‧‧‧ grain

341‧‧‧ platform

342‧‧‧Transparent conductive layer

4‧‧‧Electrode unit

41‧‧‧First electrode

42‧‧‧second electrode

44‧‧‧Second electrode line

5‧‧‧Insulation protection layer

6‧‧‧ patterned metal conductive layer

61‧‧‧First conductive area

62‧‧‧Second conductive area

Other features and effects of the present invention will be apparent from the following description of the drawings, wherein: FIG. 1 is a perspective view illustrating a light-emitting diode illumination disclosed by the Taiwan Patent No. I224873. Module 2 is a front view showing the electrical connection relationship between a plurality of light-emitting dies in the light-emitting diode light-emitting module of FIG. 1; FIG. 3 is a top plan view showing one of the novel large-area light-emitting diode lighting devices. 1 is a cross-sectional view taken along line IV-IV of FIG. 3, illustrating an epitaxial substrate, a luminescent film layer structure, and a detailed structure of an electrode unit of the first embodiment. Figure 5 is a top plan view showing a second embodiment of the novel large-area light-emitting diode lighting device; Figure 6 is a cross-sectional view taken along line VI-VI of Figure 5, illustrating the second embodiment An epitaxial substrate, an illuminating film layer structure, a plurality of electrode units, a plurality of insulating protective layers, and a detailed connection relationship of the plurality of metal conductive layers.

As shown in FIG. 3 and FIG. 4, a first embodiment of the novel large-area light-emitting diode illumination device includes an epitaxial substrate 2, an illuminating film layer structure 3, and an electrode unit 4.

The size of the epitaxial substrate 2 is greater than or equal to 1 吋. Preferably, the material of the epitaxial substrate 2 is a sapphire substrate.

As shown in FIG. 4, the luminescent film layer structure 3 includes a first type semiconductor layer 31 disposed on the epitaxial substrate 2, an active layer 32 disposed on the first type semiconductor layer 31, and a set. A second type semiconductor layer 33 on the active layer 32. A size of the luminescent film layer structure 3 is greater than or equal to 1 吋 and defines a die 34, and the die 34 is protruded from the first type semiconductor layer 31 toward the second type semiconductor layer 33, and is partially The first type semiconductor layer 31 is exposed to define a land 341 of the die 34. In the first embodiment of the present invention, the die 34 of the luminescent film layer structure 3 includes a transparent conductive layer 342 disposed on the second semiconductor layer 33 of the die 34. It can be composed of indium tin oxide (ITO).

The electrode unit 4 includes a first electrode 41, a second electrode 42, a plurality of first electrode lines 43, and a plurality of second electrode lines 44. The first electrode 41 is electrically connected to the platform 341 of the die 34, and the second electrode 42 is electrically connected to the second type semiconductor layer 33 of the die 34. The first electrode lines 43 are electrically connected to the first electrode 41 and extend to the second electrode 42 . The second electrode lines 44 are electrically connected to the second electrode 42 and extend toward the first electrode 43 .

In the first embodiment of the present invention, the electrode unit 4 can conduct the first electrode 41, the first electrode line 43, the second electrode 42 and the second electrode after an injection current is supplied from an external power source. Line 44 is such that the luminescent film layer structure 3 can emit a blue light source. It should be additionally noted here that the first embodiment of the present invention can be further designed in accordance with the chromaticity of the light source required by the environment. For example, when the environment requires a light source When the chromaticity is the blue light source, the first embodiment of the present invention can generate a blue light-emitting area of 1 大于 or more by simply supplying the injection current through the external power source. In addition, when the chromaticity of the light source required by the environment belongs to the white light source, the first embodiment of the present invention may further cover the luminescent film layer structure 3 with a yellow fluorescent layer (not shown) for transmitting the luminescent film. The blue light emitted by the layer structure 3 excites the yellow fluorescent layer and mixes the light, so that the chromaticity of the light source generated after the light mixing is a white light source.

As shown in FIG. 5 and FIG. 6, a second embodiment of the novel large-area light-emitting diode lighting device is substantially the same as the first embodiment, and the difference is that the crystal of the luminescent film layer structure 3 The number of the particles 34 and the electrode unit 4 is plural, and further includes an insulating protective layer 5 and a patterned metal conductive layer 6. As shown in FIG. 6, the first type semiconductor layers 31 of each two adjacent crystal grains 34 are connected to each other, and the land 341 of each of the crystal grains 34 corresponds to a portion of each of the first type semiconductor layers 31, each of which protrudes upward. The active layer 32 and each of the second semiconductor layers 33. The insulating protective layer 5 covers the respective crystal grains 34 such that the first electrode 41 and the second electrode 42 on each of the crystal grains 34 are exposed. The patterned metal conductive layer 6 is disposed on the insulating protective layer 5 and electrically connected to each two adjacent crystal grains 34.

Referring again to FIG. 6, the patterned metal conductive layer 6 includes a plurality of first conductive regions 61 and a plurality of second conductive regions 62. The first conductive regions 61 are electrically connected to the first electrode 41 and the second electrode 42 on each of the two adjacent crystal grains 34 such that the crystal grains 34 are electrically connected in series. The second conductive regions 62 are electrically connected first between each two adjacent crystal grains 34 The electrode 41 and the second electrode 42 between each two adjacent crystal grains 34 are such that the crystal grains 34 are electrically connected in parallel.

It should be noted that when the current is conducted through the crystal grains 34, the embodiments of the present invention can be used as a large-area illumination device without a procedure such as die cutting and surface adhesion, thereby simplifying the manufacturing process and reducing the manufacturing cost.

It is worth mentioning that the second embodiment has a plurality of crystal grains 34, and the current diffusion path is short, and the light emission is relatively uniform compared with the first embodiment. In addition, if a few crystal grains have a leakage problem, the overall brightness of the second embodiment is also less affected.

In summary, the novel large-area light-emitting diode illumination device transmits the un-cut epitaxial substrate 2 and the luminescent film layer structure 3, so that the crystal grains 34 are directly on the epitaxial substrate 2 under current conduction. A light-emitting area of 1 大于 or more is produced, thereby simplifying the manufacturing process and reducing the manufacturing cost. Therefore, the purpose of the present invention can be achieved.

However, the above is only a preferred embodiment of the present invention, and when it is not possible to limit the scope of the present invention, any simple equivalent changes and modifications made in accordance with the scope of the present patent application and the contents of the patent specification are It is still within the scope of this new patent.

2‧‧‧ epitaxial substrate

3‧‧‧luminescent film structure

31‧‧‧First type semiconductor layer

32‧‧‧ active layer

33‧‧‧Second type semiconductor layer

34‧‧‧ grain

341‧‧‧ platform

342‧‧‧Transparent conductive layer

4‧‧‧Electrode unit

41‧‧‧First electrode

42‧‧‧second electrode

43‧‧‧First electrode line

44‧‧‧Second electrode line

Claims (6)

A large-area light-emitting diode lighting device comprising: an epitaxial substrate having a size greater than or equal to 1 吋; a luminescent film layer structure comprising a first-type semiconductor layer disposed on the epitaxial substrate, An active layer on the first type semiconductor layer, and a second type semiconductor layer disposed on the active layer, the size of the luminescent film layer structure being greater than or equal to 1 吋 and defining at least one die, and the a die extending from the first type semiconductor layer toward the second type semiconductor layer and partially exposing the first type semiconductor layer to define a land of the die; and at least one electrode unit including a first An electrode and a second electrode are electrically connected and disposed on the platform of the die, and the second electrode is electrically connected to the second type semiconductor layer of the die. The large-area light-emitting diode lighting device of claim 1, wherein the dies of the luminescent film layer structure comprise a transparent conductive layer disposed on the second-type semiconductor layer of the die on. The large-area light-emitting diode lighting device of claim 2, wherein the electrode unit further comprises a plurality of first electrode lines and a plurality of second electrode lines, the first electrode lines being electrically connected to the first electrode And extending to the second electrode, the second electrode lines are electrically connected to the second electrode and extend toward the first electrode. The large-area light-emitting diode lighting device of claim 3, further comprising an insulating protective layer and a patterned metal conductive layer, wherein the number of crystal grains of the electrode unit and the luminescent film layer structure is plural , every two adjacent grains The first type of semiconductor layers are connected to each other, and the platforms of the respective crystal grains respectively surround the first type semiconductor layers, the active layers and the second type semiconductor layers which are protruded upward, and the insulating protective layer covers the respective crystal grains. The first electrode and the second electrode on each of the crystal grains are exposed, and the patterned metal conductive layer is disposed on the insulating protective layer and electrically connected to each two adjacent crystal grains. The large-area light-emitting diode lighting device of claim 4, wherein the patterned metal conductive layer comprises a plurality of first conductive regions, and the first conductive regions are electrically connected to each two adjacent crystal grains. The first electrode and the second electrode are such that the crystal grains are electrically connected in series. The large-area light-emitting diode lighting device of claim 5, wherein the patterned metal conductive layer further comprises a plurality of second conductive regions, and the second conductive regions are electrically connected to each two adjacent crystal grains a first electrode between the first electrode and a second electrode between each two adjacent crystal grains to electrically connect the crystal grains in an electrical parallel manner.