TWM509224U - Electrochemical plating apparatus and wafer edge detecting system - Google Patents

Abstract

An electrochemical plating apparatus including a plating and removing metal form wafer edge module, a carrying platform, a robot arm and detecting device. The plating and removing metal form wafer edge module is used wafer plating process and wafer edge metal removal process. The robot arm grabs the wafer and makes the wafer moving at between the plating and removing metal form wafer edge module and the carrying platform. The detecting device is disposed on the carrying platform for detecting edge of the wafer. The detecting device includes an image capturing unit, a first light source and a second light source. The image capturing unit is located above the wafer for capturing an image of edge of the wafer. An angle is disposed between an optical axis of the image capturing unit and a top surface of the wafer and the angle between 30 degrees to 90 degrees. The first source is located above the wafer and a light emitting face of the first light source faces to edge of the wafer. The second source is located below the wafer and a light emitting face of the second light source faces to edge of the wafer.

Description

Electrochemical plating equipment and wafer edge inspection system

This creation is directed to an electrochemical plating apparatus, and more particularly to an electrochemical plating apparatus for a wafer edge inspection system.

In the semiconductor process, the Electrochemical Plating (ECP) process is one of the stages of the metallization process, mainly using current to provide electrons to convert metal ions into metal atoms and depositing metal films on a certain interface. The process is usually to increase the copper layer to a copper metal layer by Physical Vapor Deposition (PVD).

The electrochemical plating process mainly consists of a plating process, an edge bevel removal (EBR), and an anneal process. The wafer bevel edge removal (EBR) is mainly to wafer edge. The residual copper is cleaned by a chemical adjustment such as hydrogen peroxide (H ₂ O ₂ ) and sulfuric acid (H ₂ SO ₄ ) to prevent the residual copper at the edge of the wafer from peeling off during the subsequent chemical mechanical polishing process and damaging the metal surface. , affecting the subsequent process, it is necessary to carry out the residual copper removal operation by the wafer oblique edge cleaning (EBR) process.

However, in the wafer bevel cleaning (EBR) process, the chemical adjustment agent is not accurate enough, and the transfer tube of the chemical transfer agent is damaged. Factors such as wafer horizontal offset and excessive or too little chemical conditioning flow cause abnormal wafer bevel cleaning, resulting in a large number of bad wafers. Therefore, it is necessary to make an abnormality in the wafer bevel cleaning process. Detection and monitoring to prevent a large number of bad wafers from being generated.

At present, the way to detect the abnormality of wafer bevel cleaning is, for example, Timing detection of wafer bevel cleaning data or sampling naked-eye detection, but such detection methods, not only can not achieve the effect of instant detection and monitoring, but also cost a lot of labor costs. Therefore, how to improve the above problems is the focus of the relevant personnel in the field.

The present invention provides an electrochemical plating apparatus having a detecting device for detecting an edge to be tested of a wafer to instantly detect whether an edge of the wafer is abnormally cleaned in an electrochemical plating process.

The present invention further provides a wafer edge detection system having a detecting device for detecting an edge to be tested of a wafer to instantly detect whether an edge of the wafer is cleaned abnormally in the electrochemical plating process.

To achieve the above advantages, the present invention provides an electrochemical plating apparatus comprising an electroplating and edge metal cleaning module, a carrying platform, a first robot arm, and at least one detecting device. Electroplating and edge metal cleaning modules are used to perform electroplating and edge metal cleaning processes on wafers. The carrier platform is used to carry the wafer. The first robot arm is located between the electroplating and edge metal cleaning module and the carrying platform for grasping the movement of the wafer between the electroplating and the edge metal cleaning module and the carrying platform. The detecting device is disposed on the carrying platform for detecting an edge to be tested of the wafer placed on the carrying platform, and the detecting device comprises an image capturing unit, a first light source and a second light source. The image capturing unit is located above the wafer for capturing an image of the edge of the wafer to be tested, and the optical axis of the image capturing unit and the wafer The top surfaces have an included angle with an included angle ranging from 30 degrees to 90 degrees. The first light source is located above the wafer, and the first light emitting surface of the first light source faces the edge to be tested. The second light source is located below the wafer, and the second light emitting surface of the second light source faces the edge to be tested.

In an embodiment of the present invention, the image capturing unit and the top surface of the wafer have a spacing greater than 0 cm and less than 5 cm.

In an embodiment of the present invention, the first light emitting surface of the first light source has an angle with the top surface of the wafer, and the angle ranges from 20 degrees to 70 degrees.

In an embodiment of the present invention, the first light source and the top surface of the wafer have a spacing greater than 0 cm and less than 20 cm.

In an embodiment of the present invention, the second light emitting surface of the second light source is parallel to a bottom surface of the wafer opposite the top surface.

In an embodiment of the present invention, the angle between the optical axis of the image capturing unit and the top surface of the wafer is 60 degrees.

In an embodiment of the present invention, the number of the at least one detecting device is plural, and the detecting devices are arranged along a circular trajectory, and the detecting devices are equally spaced from each other.

In an embodiment of the present invention, the light emitted by the first light source and the second light source respectively is red light having a wavelength ranging from 620 to 750 nm.

In an embodiment of the present invention, the light emitted by the first light source and the second light source is infrared light.

In an embodiment of the present invention, the electrochemical plating apparatus further includes a heating module, a wafer transfer cassette, and a second robot arm. The heating module is used to heat treat the wafer. The wafer transfer cassette is used to accommodate the wafer. The second robot arm is located between the carrying platform, the heating module and the wafer transfer box for gripping the wafer to make the wafer on the carrying platform, the heating module and the crystal Move between the round boxes.

The present invention also provides a wafer edge detection system, including the above Electrochemical plating equipment and processing unit. The processing unit is electrically connected to the detecting device for receiving the image of the edge to be tested of the wafer captured by the image capturing unit, and the processing unit calculates the edge width value of the wafer according to the image of the edge to be measured, and the edge width of the wafer is The value is compared with the standard value of the edge width of the wafer to obtain the variation of the edge width of the wafer, and the variation of the edge width of the wafer is compared with the threshold value to determine whether the wafer is in an abnormal state, and the processing unit responds to the abnormal state of the wafer. Control the electrochemical plating equipment to stop working.

Electrochemical plating equipment and wafer edge of the present embodiment A detection system having detection means for detecting an edge to be tested of the wafer to achieve immediate detection of a cleaning abnormality in the edge of the wafer during the electrochemical plating process. The detecting device of the present embodiment includes an image capturing unit, a first light source, and a second light source. By placing the image capturing unit above the wafer, and the optical axis of the image capturing unit and the top surface of the wafer have an angle ranging from 30 degrees to 90 degrees, respectively, the first light source and the second light source are respectively Placed on the upper and lower sides of the wafer and the light-emitting surface faces the edge of the wafer to be tested to provide sufficient light. Under such a structure, the image at the edge of the wafer can be clearly captured, and the wafer can be effectively judged based on the image. Whether the edge is cleaned abnormally. In addition, the edge edge detection system of the present embodiment can instantaneously control the electrochemical plating device to stop operating when a cleaning abnormality occurs at the edge of the wafer, so as to prevent the abnormal edge cleaning of the wafer from continuing.

The above and other objects, features and advantages of the present invention will be more It is apparent that the preferred embodiment is described below in detail with reference to the accompanying drawings.

1, 1a, 1b‧‧‧Electrical plating equipment

11‧‧‧Electroplating and edge metal cleaning modules

12‧‧‧Loading platform

13‧‧‧First robotic arm

14, 14a, 14b‧‧‧ detection device

15‧‧‧heating module

16‧‧‧ wafer transfer box

17‧‧‧Second robotic arm

100‧‧‧ wafer

101‧‧‧ top surface

102‧‧‧ bottom surface

111‧‧‧ plating bath

112‧‧‧Edge metal cleaning tank

121‧‧‧First carrying area

122‧‧‧Second carrying area

141‧‧‧Image capture unit

142‧‧‧First light source

143‧‧‧second light source

1420, 1430‧‧‧ luminous surface

2‧‧‧ Wafer Edge Detection System

20‧‧‧Processing unit

E‧‧‧ edge to be tested

OA‧‧‧ optical axis

G1, G2‧‧‧ spacing

Θ1, θ2‧‧‧ angle

CAθ1, CAθ2, CAθ3‧‧‧ center angle

FIG. 1 is a schematic structural view of an electrochemical plating apparatus according to an embodiment of the present invention.

FIG. 2 is a schematic structural view of the detecting device of the embodiment.

FIG. 3 is a schematic structural view of an electrochemical plating apparatus according to another embodiment of the present invention.

4 is a schematic structural view of a wafer edge detecting system according to an embodiment of the present invention.

Please refer to FIG. 1. FIG. 1 is a schematic structural view of an electrochemical plating apparatus according to an embodiment of the present invention. As shown in FIG. 1, the electrochemical plating apparatus 1 of the present embodiment includes an electroplating and edge metal cleaning module 11, a carrier platform 12, a first robot arm 13, and at least one detecting device 14. The electroplating and edge metal cleaning module 11 is used to perform an electroplating process on the wafer 100 and an edge metal cleaning process (ie, a wafer bevel cleaning process). The carrier platform 12 is used to carry the wafer 100. The first robot arm 13 is located between the plating and edge metal cleaning module 11 and the carrying platform 12, and the first robot arm 13 is used to grab the wafer 100 to make the wafer 100 in the plating and edge removing module 11 and the carrying platform. Move between 12s. At least one detecting device 14 is disposed on the carrying platform 12 for detecting the edge to be tested of the wafer 100 placed on the carrying platform.

The structure of the electrochemical plating apparatus of the present embodiment will be further described in detail below.

As shown in FIG. 1 , the electrochemical plating apparatus 1 of the present embodiment further includes a heating module 15 , a Front Opening Unified Pod (FOUP) 16 , and a second robot arm 17 . The heating module 15 is used for performing a heat treatment process on the wafer 100, and the purpose of the heat treatment process on the wafer is: Process defects after chemical mechanical polishing (CMP) are minimized, and the wafer must be heat treated before chemical mechanical polishing. The wafer transfer cassette 16 is used for accommodating the wafer, and the wafer transfer cassette 16 has the functions of loading, unloading, storing and transporting the wafer, and providing a high clean environment for the wafer. The second robot arm 17 is located between the carrying platform 12, the heating module 15 and the wafer transfer box 16, and the second robot arm 17 is used for grabbing the wafer to transfer the wafer to the carrying platform 12, the heating module and the wafer. Move between boxes.

As shown in FIG. 1, the carrier platform 12 of this embodiment includes a first The carrying area 121 and the second carrying area 122, in addition, the plating and edge metal cleaning module 11 includes at least one plating bath 111 and at least one edge metal cleaning tank 112. The first carrying area 121 of the carrying platform 12 is the entrance of the wafer into the plating and edge metal cleaning module 11, that is, the first mechanical arm 13 grabs the wafer placed on the first carrying area 121 and enters the plating. After the electroplating process is performed with the plating tank 111 of the edge metal cleaning module 11, the first robot arm 13 then grabs the plated wafer to the edge metal cleaning bath 112 for the edge metal cleaning process. The second carrying area 122 of the carrying platform 12 exits the exit of the plating and edge metal cleaning module 11 after the wafer is subjected to an electroplating process and an edge metal cleaning process, that is, the first robot arm 13 completes the plating and edge metal cleaning. The wafer is captured to the second load-bearing area 122 for placement. It is worth mentioning that, in this embodiment, the detecting device 14 for detecting whether the edge of the wafer is cleaned or not is disposed in the second carrying region 122 of the carrying platform 12.

Please refer to FIG. 2, which is the structure of the detecting device 14 of the embodiment. schematic diagram. As shown in FIG. 2, the detecting device 14 of the embodiment includes an image capturing unit 141, a first light source 142, and a second optical edge 143. The image capturing unit 141 is located above the wafer 100, that is, above the second carrying area 122 of the carrying platform 12, and the image capturing unit 141 is configured to capture the edge of the wafer 100 to be tested. It is worth mentioning that the optical axis OA of the image capturing unit 141 has an angle θ1 with the top surface 101 of the wafer 100, and the angle θ1 ranges, for example, between 30 degrees and 90 degrees. The first light source 142 is located above the wafer 100, that is, above the second carrying area 122 of the carrying platform 12, and the first light source 142 and the image capturing unit 141 are respectively located on the carrying platform 12 (or the wafer 100). On the different sides of the first light source 142, the light emitting surface 1420 of the first light source 142 faces the edge E of the wafer 100 to be tested. The second light source 143 is located below the wafer 100. Specifically, the second light source 143 is embedded in the carrying platform 12, and the second light source 143 and the image capturing unit 141 are respectively located on the carrying platform 12 (or On the same side of the circle 100), the light emitting surface 1430 of the second light source 143 faces the edge E to be tested of the wafer 100.

In this embodiment, the optical axis OA of the image capturing unit 141 is The angle θ1 between the top surface 101 of the wafer 100 is, for example, 60 degrees, but the present invention is not limited thereto, and the angle θ1 between the optical axis OA of the image capturing unit 141 and the top surface 101 of the wafer may be practical. In the case of the situation, the most suitable angle is selected between 30 degrees and 90 degrees. When the angle θ1 between the optical axis OA of the image capturing unit 141 and the top surface 101 of the wafer 100 is 60 degrees, the image capturing unit The 141 is capable of capturing an image of the edge E of the wafer 100 to be measured. In addition, the image capturing unit 141 and the top surface 101 of the wafer 100 have a gap G1, and the range of the spacing G1 is, for example, greater than 0 cm and less than 5 cm, but the creation does not limit the image capturing unit. The distance G1 between the 141 and the top surface 101 of the wafer 100 may be selected from the most suitable pitch distance between more than 0 cm and less than 5 cm depending on the actual situation.

In this embodiment, the light emitting surface 1420 of the first light source 142 is The surface 101 of the wafer 100 has an included angle θ2 between which the included angle θ2 is, for example, between 20 degrees and 70 degrees. In addition, the first light source 142 and the wafer 100 have The pitch G2, the range of the pitch G2 is, for example, greater than 0 cm and less than 20 cm. The present invention does not limit the angle between the light-emitting surface 1420 of the first light source 142 and the surface 101 of the wafer 100 at an angle θ2 and the distance G2 between the first light source 142 and the wafer 100, which can be provided according to actual needs. Use the most suitable angle and spacing distance with sufficient light. In addition, the light emitting surface 1430 of the second light source 143 is, for example, parallel to the bottom surface 102 of the wafer 100 opposite to the top surface 101. However, the present invention is not limited thereto, and the second light source can provide sufficient light. 143 and the bottom surface 102 of the wafer 100 may also have an included angle depending on the actual situation.

In this embodiment, the first light source 142 and the second light source 143 are The light rays respectively emitted are, for example, red light having a wavelength ranging from 620 nm to 750 nm, but the present invention is not limited thereto. In other embodiments, the first light source 142 and the second light source 143 are The separately emitted light is, for example, infrared light.

Please refer to FIG. 3 , which is an electrochemical example of another embodiment of the present invention. Schematic diagram of the electroplating equipment. As shown in FIG. 3, the electrochemical plating apparatus 1a of the present embodiment is substantially similar to the structure of the electrochemical plating apparatus 1 shown in FIG. 1, except that the electrochemical plating apparatus 1a of the present embodiment includes a plurality of detecting devices 14, 14a. , 14b. It should be noted that, for convenience of description, FIG. 3 only shows the components of the carrying platform 12, the wafer 100 and the detecting devices 14, 14a, 14b, etc. In addition, the structure and detection of the detecting devices 14a, 14b of the present embodiment The architecture of the device 14 is the same, and the detailed detection device architecture is shown in FIG. 2. The detecting devices 14, 14a, 14b of the present embodiment are arranged along a circular trajectory, that is, along a circular trajectory of the wafer 100, and the spacing between the detecting devices 14, 14a, 14b is equal, for example. Specifically, the arrangement position of the detecting device 14 and the detecting device 14a have a central angle CAθ1, and the detecting device 14a and The detection device 14b has a central angle CA?2, and the detection device 14b and the detection device 14 have a central angle CA?3, and the angles of the central angle CA?1, the central angle CA?2, and the central angle CA?3 are equal to each other. In the structural design of the embodiment having a plurality of detecting devices 14, 14a, 14b, images of different edges of the wafer 100 to be tested can be captured by the detecting devices 14, 14a, 14b, according to a plurality of different side edges. The image is used to determine whether the edge of the wafer is abnormally cleaned, thereby improving the accuracy of the detection.

It should be particularly noted that in the present embodiment, the number of detecting devices The quantity is described by taking three examples as an example, but the number of the detecting devices is not limited in the present creation. In the case where the arrangement space of the electrochemical plating apparatus 1a is sufficient, the number of the detecting devices can be adjusted according to actual needs. increase.

Please refer to FIG. 4, which is a wafer edge of an embodiment of the present invention. Schematic diagram of the structure of the detection system. As shown in FIG. 4, the wafer edge detecting system 2 of the present embodiment includes an electrochemical plating apparatus 1b and a processing unit 20. In the present embodiment, the structure of the electrochemical plating apparatus 1b is substantially similar to the structure of the electrochemical plating apparatus 1 shown in FIG. 1. For the description of the related components, please refer to FIG. 1, which will not be further described herein. The processing unit 20 of the embodiment is electrically connected to the detecting device 14 of the electrochemical plating device 1b, and the processing unit 20 is configured to receive the image of the edge to be tested of the wafer 100 captured by the image capturing unit 141, and the processing unit 20 is based on the wafer. Calculate the edge width value of the image of the edge of the 100 to be measured, and compare the wafer edge width value with the wafer edge width standard value (for example, 2.2 mm or 2.8 mm) to obtain the wafer edge width variation. The wafer edge width variation is compared with the threshold value to determine whether the wafer is in an abnormal state. If the wafer edge width variation exceeds the threshold value, it is determined that the wafer 100 is in an abnormal state, and the processing unit 20 is in the wafer 100 The electrochemical plating apparatus 1b is controlled to stop operating in an abnormal state. If the wafer edge width variation does not exceed the threshold, then It is determined that the wafer 100 is in a normal state, and the processing unit 20 does not stop the operation of the electrochemical plating apparatus 1b, and continues the above-described step of monitoring whether the wafer is in an abnormal state.

In summary, the electrochemical plating apparatus of the present embodiment and A wafer edge detection system having a detecting device for detecting an edge to be tested of a wafer to instantly detect whether an edge of the wafer is cleaned abnormally in the electrochemical plating process. The detecting device of the present embodiment includes an image capturing unit, a first light source, and a second light source. By placing the image capturing unit above the wafer, and the optical axis of the image capturing unit and the top surface of the wafer have an angle ranging from 30 degrees to 90 degrees, respectively, the first light source and the second light source are respectively Placed on the upper and lower sides of the wafer and the light-emitting surface faces the edge of the wafer to be tested to provide sufficient light. Under such a structure, the image at the edge of the wafer can be clearly captured, and the wafer can be effectively judged based on the image. Whether the edge is cleaned abnormally. In addition, the edge edge detection system of the present embodiment can instantaneously control the electrochemical plating device to stop operating when a cleaning abnormality occurs at the edge of the wafer, so as to prevent the abnormal edge cleaning of the wafer from continuing.

While the present invention has been described in its preferred embodiments, the present invention is not intended to limit the invention, and the present invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application.

12‧‧‧Loading platform

14‧‧‧Detection device

100‧‧‧ wafer

101‧‧‧ top surface

102‧‧‧ bottom surface

122‧‧‧Second carrying area

141‧‧‧Image capture unit

142‧‧‧First light source

143‧‧‧second light source

1420, 1430‧‧‧ luminous surface

E‧‧‧ edge to be tested

OA‧‧‧ optical axis

G1, G2‧‧‧ spacing

Θ1, θ2‧‧‧ angle

Claims (11)

An electrochemical plating apparatus comprising: an electroplating and edge metal cleaning module for performing an electroplating process and an edge metal cleaning process on a wafer; a carrying platform for carrying the wafer; and a first robot arm Between the electroplating and edge metal cleaning module and the carrying platform for grasping the wafer to move the wafer between the plating and edge metal cleaning module and the carrying platform; and at least one detecting The device is disposed on the carrying platform for detecting a to-be-measured edge of the wafer placed on the carrying platform. The detecting device includes: an image capturing unit located above the wafer for capturing the An image of the edge to be tested of the wafer, and an optical axis of the image capturing unit and an upper surface of the wafer have an angle ranging from 30 degrees to 90 degrees; a light source is disposed above the wafer, a first light emitting surface of the first light source faces the edge to be tested; and a second light source is located below the wafer, and a second light emitting surface of the second light source faces The edge to be tested. The electrochemical plating apparatus of claim 1, wherein the image capturing unit and the top surface of the wafer have a spacing greater than 0 cm and less than 5 cm. The electrochemical plating apparatus of claim 1, wherein the first light emitting surface of the first light source has an angle with the top surface of the wafer, and the angle ranges from 20 degrees to 70 degrees. Between degrees. The electrochemical plating apparatus of claim 1, wherein the first light source and the top surface of the wafer have a spacing greater than 0 cm and less than 20 cm. The electrochemical plating apparatus of claim 1, wherein the second light emitting surface of the second light source is parallel to a bottom surface of the wafer opposite the top surface. The electrochemical plating apparatus of claim 1, wherein an angle between the optical axis of the image capturing unit and the top surface of the wafer is 60 degrees. The electrochemical plating apparatus according to claim 1, wherein the number of the at least one detecting device is plural, the detecting devices are arranged along a circular track, and the detecting devices are equally spaced from each other . The electrochemical plating apparatus of claim 1, wherein the first light source and the second light source respectively emit red light having a wavelength ranging from 620 to 750 nm. An electrochemical plating apparatus according to claim 1, wherein The light emitted by the first light source and the second light source is infrared light. The electrochemical plating apparatus of claim 1, further comprising: a heating module for performing a heat treatment process on a wafer; a wafer transfer cassette for accommodating the wafer; a second robot arm is disposed between the carrying platform, the heating module, and the wafer transfer cassette, for grasping the wafer to make the wafer on the carrying platform, the heating module, and the wafer transfer box Move between. A wafer edge detecting system, comprising: the electrochemical plating device according to claim 1; and a processing unit electrically connected to the detecting device for receiving the image capturing unit An image of the edge to be tested of the wafer, the processing unit calculates a wafer edge width value according to the image of the edge to be tested, and compares the edge width value of the wafer with a standard value of a wafer edge width to obtain a The wafer edge width variation amount is compared with a threshold value of the wafer to determine whether the wafer is in an abnormal state, and the processing unit controls the electrochemical plating according to the wafer being in the abnormal state. The device stopped working.