TWM483633U - Metal substrate - Google Patents

Metal substrate Download PDF

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Publication number
TWM483633U
TWM483633U TW103204002U TW103204002U TWM483633U TW M483633 U TWM483633 U TW M483633U TW 103204002 U TW103204002 U TW 103204002U TW 103204002 U TW103204002 U TW 103204002U TW M483633 U TWM483633 U TW M483633U
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Taiwan
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metal
substrate
insulating substrate
layer
modified surface
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TW103204002U
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Chinese (zh)
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Hung-Jung Lee
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Azotek Co Ltd
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Priority to TW103204002U priority Critical patent/TWM483633U/en
Publication of TWM483633U publication Critical patent/TWM483633U/en

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Abstract

A metal substrate comprises a first insulation substrate, a second insulation substrate, a first metal layer, a second metal layer and a release layer. The first insulation substrate has a first modification surface and a second surface opposite to the first modification surface. The first metal layer faces the second surface. The release layer is bonded on the first modification surface, and thus the first insulation substrate is disposed between the release layer and the first metal layer. The second insulation substrate is disposed on one side of the release layer, and thus the release layer is disposed between the first modification surface and the second insulation substrate. The second metal layer is disposed on one side of the second insulation substrate, and thus the second insulation substrate is disposed between the release layer and the second metal layer. The first modification surface has an original roughness. When the first modification surface is released from the release layer, the difference between the original roughness and the released roughness of the first modification surface is substantially less than 10%.

Description

金屬基板Metal substrate

本創作是有關於一種電子電路基板,且特別是有關於一種金屬基板。The present invention relates to an electronic circuit substrate, and more particularly to a metal substrate.

印刷電路板是電子產品中不可或缺之材料,而隨著消費性電子產品需求成長,對於印刷電路板之需求亦是與日俱增。由於軟性印刷電路板具有可撓曲性及可三度空間配線等特性,在科技化電子產品強調輕薄短小、可撓曲性的發展驅勢下,目前被廣泛應用電腦及其週邊設備、通訊產品以及消費性電子產品等等。Printed circuit boards are an indispensable material in electronic products, and as the demand for consumer electronics grows, so does the demand for printed circuit boards. Due to the flexible nature of flexible printed circuit boards and the ability to make three-dimensional wiring, the use of computer and its peripheral equipment and communication products is widely used in the development of technology-based electronic products that emphasize lightness, shortness, and flexibility. And consumer electronics and more.

典型的印刷電路基板是由一介電基板,例如樹脂(Resin)、玻璃纖維(Glass fiber)或其他塑化材質,以及一高純度的導體層,例如銅箔(Copper foil)或其他金屬材料層,所形成的複合結構(Composite material)。以軟性銅箔基板(Flexible Copper Clad Laminate)為例,其係以聚醯亞胺(Polyimide,PI)基材作為介電基板的主要成份,並採用塗佈法(Casting)或熱壓法(Lamination),將無膠單面銅箔塗佈或貼附於聚醯亞胺基材表面。A typical printed circuit board is composed of a dielectric substrate such as resin (Resin), glass fiber or other plasticized material, and a high-purity conductor layer such as a copper foil or other metal material layer. , the formed composite material. Taking Flexible Copper Clad Laminate as an example, a Polyimide (PI) substrate is used as a main component of a dielectric substrate, and a coating method (Casting) or a hot pressing method (Lamination) is used. ), a glue-free single-sided copper foil is coated or attached to the surface of the polyimide substrate.

目前電子系統朝向輕薄短小、且低成本的方向發展,因此軟性印刷電路板的選用也朝向超薄、高密度及多功能方向發展。然而,由於採用單層聚醯亞胺基材來製作超薄軟性印刷電路板的技術,基材的挺性不夠,在加工製程中,易造成折傷、墊傷或爆板的問題, 影響生產的良率和尺寸安定性。有鑒於此,現已有額外採用塗布或轉印法將黏著層形成於單層聚醯亞胺基材表面上,並以一補強層貼覆於黏著層上,並予以壓合使該補強層緊密黏接聚醯亞胺基材,得到複合式結構,使其對超薄銅箔基板提供補強作用,並在從而提升超薄軟性印刷電路板的良率。At present, electronic systems are moving toward a light, short, and low-cost direction, so the selection of flexible printed circuit boards is also moving toward ultra-thin, high-density, and multi-functional directions. However, due to the technique of fabricating an ultra-thin flexible printed circuit board using a single-layer polyimide substrate, the stiffness of the substrate is insufficient, which may cause problems of folding, padding or flashing in the processing process. Affects production yield and dimensional stability. In view of this, an adhesive layer is additionally formed on the surface of the single-layer polyimide substrate by a coating or transfer method, and is adhered to the adhesive layer with a reinforcing layer, and is pressed to make the reinforcing layer. The polyimide substrate is tightly bonded to obtain a composite structure, which provides a reinforcing effect on the ultra-thin copper foil substrate, thereby improving the yield of the ultra-thin flexible printed circuit board.

然而,在高壓高溫的熱壓合作用下,黏膠會與聚醯亞胺基材產生些許的熔接作用,以致於後續要將補強層撕離時,容易造成黏膠殘留,增加產品的不良率。若保留補強層又徒增軟性印刷電路板的厚度。因此,有需要提供一種先進的印刷電路基板及其製作方法,解決習知技術所面臨的問題。However, under the high pressure and high temperature hot pressing cooperation, the adhesive will have a slight fusion effect with the polyimide substrate, so that when the reinforcing layer is torn off later, the adhesive residue is easily caused, and the defective rate of the product is increased. . If the reinforcing layer is retained, the thickness of the flexible printed circuit board is increased. Therefore, there is a need to provide an advanced printed circuit board and a method of fabricating the same that solves the problems faced by the prior art.

本創作一方面是在提供本發明一方面是在提供一種金屬基板,包括第一絕緣基材、第二絕緣基材、第一金屬層、第二金屬層及離型層。第一絕緣基材具有第一改質表面以及相對於第一改質表面的第二表面。第一金屬層面對第二表面。離型層貼合於第一改質表面,使第一絕緣基材位於離型層與第一金屬層之間。第二絕緣基材位於離型層的一側,並使離型層位於第一改質表面與第二絕緣基材之間。第二金屬層位於第二絕緣基材的一側,使第二絕緣基材位於離型層與第二金屬層之間。第一改質表面具有一初始表面粗糙度。在第一改質表面與離型層分離之後,第一改質表面的初始表面粗糙度的變化量實質小於10%。In one aspect, the present invention provides a metal substrate including a first insulating substrate, a second insulating substrate, a first metal layer, a second metal layer, and a release layer. The first insulating substrate has a first modified surface and a second surface opposite the first modified surface. The first metal layer faces the second surface. The release layer is attached to the first modified surface such that the first insulating substrate is between the release layer and the first metal layer. The second insulating substrate is located on one side of the release layer and the release layer is positioned between the first modified surface and the second insulating substrate. The second metal layer is on one side of the second insulating substrate such that the second insulating substrate is between the release layer and the second metal layer. The first modified surface has an initial surface roughness. After the first modified surface is separated from the release layer, the amount of change in the initial surface roughness of the first modified surface is substantially less than 10%.

在本創作的一實施例之中,金屬基板更包括位於第一絕緣基材與第一金屬層之間的第一黏膠層。在本創作的一實施例之中,金屬基板更包括位於第二絕緣基材與第二金屬層之間的第二黏膠層。在本創作的一實施例之中,金屬基板更包括:位於第一絕緣基材與第 一金屬層之間的第一黏膠層,以及位於第二絕緣基材與第二金屬層之間的第二黏膠層。In an embodiment of the present invention, the metal substrate further includes a first adhesive layer between the first insulating substrate and the first metal layer. In an embodiment of the present invention, the metal substrate further includes a second adhesive layer between the second insulating substrate and the second metal layer. In an embodiment of the present invention, the metal substrate further includes: a first insulating substrate and a first a first adhesive layer between the metal layers and a second adhesive layer between the second insulating substrate and the second metal layer.

在本創作的一實施例之中,第二絕緣基材面對離型層的一側,具有與第一改質表面相同的第二改質表面。In an embodiment of the present creation, the second insulating substrate faces the side of the release layer and has the same second modified surface as the first modified surface.

在本創作的一實施例之中,離型層包含彈性體型感壓膠、樹脂型感壓膠或二者之組合。In an embodiment of the present creation, the release layer comprises an elastomeric pressure sensitive adhesive, a resinous pressure sensitive adhesive, or a combination of the two.

在本創作的一實施例之中,第一改質表面包括至少一官能基,其係選自於由-CH3、-CH2、-O-、-COOH、-COOHCH3、-COOHC2H5、-NH2、-NO2、-OH、-CONH2、-CONH、-SiO2及上述任一組合所組成的一族群。In an embodiment of the present invention, the first modifying surface comprises at least one functional group selected from the group consisting of -CH3, -CH2, -O-, -COOH, -COOHCH3, -COOHC2H5, -NH2, - A group consisting of NO2, -OH, -CONH2, -CONH, -SiO2, and any combination of the above.

在本創作的一實施例之中,第一改質表面的表面位能(surface energy),實質大於3達因/公分。In an embodiment of the present creation, the surface energy of the first modified surface is substantially greater than 3 dynes/cm.

在本創作的一實施例之中,第一金屬層和第二金屬層包含:銅(Cu)、鋁(Al)、金(Au)、銀(Ag)、錫(Sn)、鉛(Pb)、鉛錫合金(Sn-Pb Alloy)、鐵(Fe)、鈀(Pd)、鎳(Ni)、鉻(Cr)、鉬(Mo)、鎢(W)、鋅(Zn)、錳(Mn)、鈷(Co)、不鏽鋼(stainless steel)或上述之任意組合。In an embodiment of the present invention, the first metal layer and the second metal layer comprise: copper (Cu), aluminum (Al), gold (Au), silver (Ag), tin (Sn), lead (Pb) , Sn-Pb Alloy, Iron (Fe), Pd (Pd), Nickel (Ni), Chromium (Cr), Mo (Mo), Tungsten (W), Zinc (Zn), Manganese (Mn) , cobalt (Co), stainless steel (stainless steel) or any combination of the above.

在本創作的一實施例之中,第一絕緣基材和該第二絕緣基材的材質,分別係選自於由聚醯亞胺(Polyimide,PI)、聚乙烯對苯二甲酸酯(Polyethylene Terephthalate,PET)、鐵氟龍(Teflon)、液晶高分子(Liquid Crystal Polymer,LCP)、聚乙烯(Polyethylene,PE)、聚丙烯(Polypropylene,PP)、聚苯乙烯(Polystyrene,PS)、聚氯乙烯(Polyvinyl Chloride,PVC)、尼龍(Nylon or Polyamides)、壓克力(Acrylic)、ABS塑膠(Acrylonitrile-Butadiene-Styrene)、酚樹脂(Phenolic Resins)、環氧樹脂(Epoxy)、聚酯(Polyester)、矽膠(Silicone)、聚氨基甲酸乙酯(Polyurethane,PU)、聚醯胺-醯亞胺(polyamide-imide,PAI)及上述任一組合所組成的一族群。In an embodiment of the present invention, the materials of the first insulating substrate and the second insulating substrate are respectively selected from polyimide (PI), polyethylene terephthalate ( Polyethylene Terephthalate, PET), Teflon, Liquid Crystal Polymer (LCP), Polyethylene (PE), Polypropylene (PP), Polystyrene (PS), Poly Polyvinyl chloride (PVC), Nylon or Polyamides, Acrylic, ABS (Acrylonitrile-Butadiene-Styrene), Phenolic Resins, Epoxy, Polyester (Epoxy) Polyester), Silicone, Polyurethane (PU), Polyamide-imide (PAI), and a combination of any of the above.

根據上述實施例,本創作的是提供一種金屬基板,其係將兩個分別包含有絕緣基材和金屬層的單面板結構之金屬基板,以離型層將二者貼合。並在其中一個單面板結構之金屬基板的絕緣基材與離型層貼合的界面上,進行改質製程,使其具有一改質表面。當此一絕緣基材在與離型層(或另一絕緣基材)分離時,此一絕緣基材之改質表面的表面粗糙度與尚未與離型層貼合前的起始表面粗糙度相比,其變化量實質小於10%。According to the above embodiment, the present invention provides a metal substrate in which two metal substrates each having a single-panel structure including an insulating substrate and a metal layer are bonded together by a release layer. And on the interface of the insulating substrate of the metal substrate of the single-panel structure and the release layer, the modification process is performed to have a modified surface. When the insulating substrate is separated from the release layer (or another insulating substrate), the surface roughness of the modified surface of the insulating substrate and the initial surface roughness before bonding to the release layer In comparison, the amount of change is substantially less than 10%.

當採用此一雙層金屬基板來製作印刷電路基板時,不但可補強單面板結構之金屬基板的結構強度,防止其在印刷電路基板製程中發生折傷、墊傷或爆板,從而提升印刷電路基板的良率。另外,可以利用絕緣基材之改質表面的表面位能較低,可在和離型層貼合之後再輕易與之分離,而不殘留黏膠的特性,將兩個單面板結構之金屬基板暫時壓合,待經過印刷電路基板全製程之後再予分離,藉以同時製作出兩個具有單面板結構的印刷電路基板,如此更可大幅增加印刷電路基板製程的效率與產能。When the printed circuit board is fabricated by using the two-layer metal substrate, the structural strength of the metal substrate of the single-panel structure can be enhanced, and the printed circuit can be prevented from being damaged, padded or exploded in the process of the printed circuit board, thereby improving the printed circuit. The yield of the substrate. In addition, the surface of the modified substrate can be made of a lower surface energy, and can be easily separated from the release layer, without leaving the characteristics of the adhesive, and the metal substrate of the two single-panel structure Temporarily press-fitted, and then separated after passing through the entire process of the printed circuit board, thereby simultaneously producing two printed circuit boards having a single-panel structure, which can greatly increase the efficiency and productivity of the printed circuit board process.

10‧‧‧單面板結構之金屬基板10‧‧‧Metal substrate with single-panel structure

11‧‧‧單面板結構之金屬基板11‧‧‧Metal substrate with single-panel structure

21‧‧‧單面板結構之金屬基板21‧‧‧Metal substrate with single-panel structure

30‧‧‧單面板結構之金屬基板30‧‧‧Metal substrate with single-panel structure

40‧‧‧單面板結構之金屬基板40‧‧‧Metal substrate with single-panel structure

41‧‧‧單面板結構之金屬基板41‧‧‧Metal substrate with single-panel structure

100‧‧‧雙面板結構之金屬基板100‧‧‧Double-panel metal substrate

101‧‧‧第一絕緣基材101‧‧‧First insulating substrate

101a‧‧‧第一絕緣基材的第一表面101a‧‧‧ first surface of the first insulating substrate

101b‧‧‧第一絕緣基材的第二表面101b‧‧‧Second surface of the first insulating substrate

101c‧‧‧第一改質表面101c‧‧‧First modified surface

102‧‧‧第一金屬層102‧‧‧First metal layer

103‧‧‧第一黏膠層103‧‧‧First adhesive layer

104‧‧‧改質製程104‧‧‧Modification process

105‧‧‧離型層105‧‧‧ release layer

106‧‧‧第二絕緣基材106‧‧‧Second insulating substrate

107‧‧‧第二金屬層107‧‧‧Second metal layer

108‧‧‧第二黏膠層108‧‧‧Second adhesive layer

109‧‧‧熱壓合製程109‧‧‧Hot press process

200‧‧‧雙面板結構之金屬基板200‧‧‧Double-panel metal substrate

206‧‧‧第二絕緣基材206‧‧‧Second insulating substrate

206c‧‧‧第二改質表面206c‧‧‧Second modified surface

207‧‧‧第二金屬層207‧‧‧Second metal layer

208‧‧‧第二黏膠層208‧‧‧Second adhesive layer

300‧‧‧雙面板結構之金屬基板300‧‧‧Double-panel metal substrate

306‧‧‧第二絕緣基材306‧‧‧Second insulating substrate

307‧‧‧第二金屬層307‧‧‧Second metal layer

400‧‧‧雙面板結構之金屬基板400‧‧‧Double-panel metal substrate

401‧‧‧第一絕緣基材401‧‧‧First insulating substrate

401c‧‧‧第一改質表面401c‧‧‧First modified surface

402‧‧‧第一金屬層402‧‧‧First metal layer

406‧‧‧第二絕緣基材406‧‧‧Second insulating substrate

407‧‧‧第二金屬層407‧‧‧Second metal layer

圖1A至1F係根據本創作的一實施例所繪示之製作印刷電路基板的製程結構剖面示意圖。1A to 1F are schematic cross-sectional views showing a process structure for fabricating a printed circuit board according to an embodiment of the present invention.

圖2係根據本創作的另一實施例所繪示的雙面板結構之金屬基板的結構剖面圖。2 is a cross-sectional view showing the structure of a metal substrate of a double-panel structure according to another embodiment of the present invention.

圖3係根據本創作的又一實施例所繪示的雙面板結構之金屬基板的結構剖面圖。3 is a cross-sectional view showing the structure of a metal substrate of a double-panel structure according to still another embodiment of the present invention.

圖4係根據本創作的再另一實施例所繪示的雙面板結構之金屬基板的結構剖面圖。4 is a cross-sectional view showing the structure of a metal substrate of a double panel structure according to still another embodiment of the present invention.

本創作是在提供一種雙面板結構之金屬基板,其係包含有兩個以離型層相互貼合的單面板結構之金屬基板,藉由其中一個單面板結構之金屬基板所採用的絕緣基材具有可暫時和絕緣貼附層貼合/離型(bond/debond)的特性,來解決製程中發生基材易折傷、墊傷或爆板等問題,還可大幅提高製程良率與效率。為讓本創作之上述和其他目的、特徵和優點能更明顯易懂,下文特舉數個金屬基板及其製作方法作為較佳實施例,並配合所附圖式,作詳細說明如下。The present invention provides a metal substrate having a double-panel structure, which comprises two metal substrates of a single-panel structure in which the release layers are bonded to each other, and an insulating substrate used for a metal substrate of one single-panel structure. It has the characteristics of temporary and insulative bonding/bonding/bonding (bond/debond) to solve the problems of substrate breakage, padding or blasting in the process, and can greatly improve the process yield and efficiency. The above and other objects, features and advantages of the present invention will become more apparent and understood.

請參照圖1A至1E,圖1A至1E係根據本創作的一實施例所繪示之製作雙面板結構之金屬基板100的製程結構剖面示意圖。其中製作雙面板結構之金屬基板100的方法,包含下述步驟:首先,提供第一絕緣基材101,其中第一絕緣基材101係具有彼此相對的第一表面101a以和第二表面101b(如圖1A所繪示)。1A to 1E are schematic cross-sectional views showing a process structure of a metal substrate 100 for fabricating a double-panel structure according to an embodiment of the present invention. The method of manufacturing the metal substrate 100 of the double-panel structure includes the following steps: First, a first insulating substrate 101 is provided, wherein the first insulating substrate 101 has a first surface 101a opposite to each other and a second surface 101b ( As shown in Figure 1A).

在本創作的一些實施例之中,第一絕緣基材101可以是電木板、玻璃纖維板或各式的塑膠板材。例如由聚醯亞胺、聚乙烯對苯二甲酸酯、鐵氟龍、液晶高分子、聚乙烯、聚丙烯、聚苯乙烯、聚氯乙烯、尼龍、壓克力、ABS塑膠、酚樹脂、環氧樹脂、聚酯、矽膠、聚氨基甲酸乙酯、聚醯胺-醯亞胺及上述任意組合。In some embodiments of the present creation, the first insulating substrate 101 may be an electric wood board, a fiberglass board, or a variety of plastic sheets. For example, from polyimine, polyethylene terephthalate, Teflon, liquid crystal polymer, polyethylene, polypropylene, polystyrene, polyvinyl chloride, nylon, acrylic, ABS plastic, phenolic resin, Epoxy resin, polyester, silicone, polyurethane, polyamide-imine, and any combination thereof.

在本創作的一實施例之中,第一絕緣基材101可以是一種以玻璃纖維、不織物料、以及樹脂組成的絕緣部分,再以環氧樹脂和銅箔壓製成的黏合片(prepreg)。而在本創作的另一實施例之中,第一絕緣基材101可以是一種可撓性的聚醯亞胺薄膜、聚乙烯對苯二甲酸酯薄膜或鐵氟龍薄膜。而在本實施例中,第一絕緣基材101,較佳係厚度實質介於5μm至200μm的聚醯亞胺薄膜。其中,第一絕緣基材101在100℃至200℃之間之熱線性膨脹係數,實質介於5ppm/℃至60ppm/℃ 之間。且第一絕緣基材101的玻璃轉移溫度(Glass transition temperature,Tg)實質介於200℃至450℃之間。In an embodiment of the present invention, the first insulating substrate 101 may be a prepreg made of an insulating portion composed of glass fibers, a non-woven material, and a resin, and then pressed with an epoxy resin and a copper foil. In another embodiment of the present invention, the first insulating substrate 101 may be a flexible polyimide film, a polyethylene terephthalate film or a Teflon film. In the present embodiment, the first insulating substrate 101 is preferably a polyimide film having a thickness substantially ranging from 5 μm to 200 μm. Wherein, the thermal insulating coefficient of the first insulating substrate 101 between 100 ° C and 200 ° C is substantially between 5 ppm / ° C and 60 ppm / ° C between. And the glass transition temperature (Tg) of the first insulating substrate 101 is substantially between 200 ° C and 450 ° C.

形成此一聚醯亞胺薄膜的方式,是採用包含二酐化合物、二胺化合物單體及含有聚醯胺酸溶液的溶劑來進行合成。其中二酐化合物包含:2,2-雙(3,4-二羧酸)六氟丙烷二酐雙酐(6FDA)、4-(2,5-二氧代四氫呋喃-3-基)-1,2,3,4-四氫萘-1,2-二甲酸雙酐(TDA)、均苯四甲酸二酐(1,2,4,5-均苯四甲酸二酐,PMDA)、二苯酮四甲酸二酐(benzophenone tetracarboxylic dianhydride,BTDA)、聯苯四羧酸二酐(Biphenyltetracarboxylic dianhydride,BPDA)、4,4,-氧苯二甲酸酐(4,4,-Oxydiphthalic dianhydride,4,4,-ODPA)、3,4,-氧苯二甲酸酐(3,4,-Oxydiphthalic dianhydride,3,4,-ODPA)、雙-二羧基苯基二甲基矽烷二酐(bis dicarboxyphenyl dimethylsilane dianhydride,SiDA)、雙二(羧基苯氧基)二苯硫醚二酐(Bis(dicarboxyphenoxy)diphenyl sulfide dianhydride,BDSDA)、1,4,5,8-亞萘四甲酸二酐(1,4,5,8-Naphthalenetetracarboxylicdianhydride、NTCDA)、對苯二酚二酞酸酐(hydroquinnone diphtalic anhydride、HQDA)、雙酚A二酐(4,4'-bisphenol A dianhydride、BPADA)、1,3-二氫-1,3-二氧-5-異苯并呋喃羧酸亞苯酯3,3’,4,4’-二苯基碸四酸酐(3,3’,4,4’-Diphenylsulfone tetracarboxylic dianhydride、DSDA)、(1,3-dihydro-1,3-dioxo-5-isobenzofurancarboxylic acid phenylene ester、TAHQ)、二苯基碸四羧酸二酸酐(sulfonyldiphthalic anhydride,SO 2 DPA)、環丁烷四甲酸二酐(Cyclobutane-1,2,3,4-tetracarboxylic dianhydride,CBDA)、(異丙基二苯氧基)雙(鄰苯二甲酸酐)(isopropylidene di-phenoxy)bis(phthalic anhydride),6HBDA)等其中的一種或多種,但並不以此為限。The method of forming the polyimide film is carried out by using a solvent comprising a dianhydride compound, a diamine compound monomer, and a polyglycine solution. The dianhydride compound comprises: 2,2-bis(3,4-dicarboxylic acid) hexafluoropropane dianhydride dianhydride (6FDA), 4-(2,5-dioxotetrahydrofuran-3-yl)-1, 2,3,4-tetrahydronaphthalene-1,2-dicarboxylic acid dianhydride (TDA), pyromellitic dianhydride (1,2,4,5-pyromellitic dianhydride, PMDA), benzophenone Benzophenone tetracarboxylic dianhydride (BTDA), biphenyltetracarboxylic dianhydride (BPDA), 4,4,- oxyphthalic anhydride (4,4,-Oxydiphthalic dianhydride, 4,4,- ODPA), 3,4,- oxyphthalic anhydride (3,4,-Oxydiphthalic dianhydride, 3,4,-ODPA), bis-dicarboxyphenyl dimethylsilane dianhydride (SiDA) Bis(dicarboxyphenoxy)diphenyl sulfide dianhydride (BDSDA), 1,4,5,8-naphthalenetetracarboxylic dianhydride (1,4,5,8- Naphthalene tetracarboxylic dianhydride, NTCDA), hydroquinnone diphtalic anhydride (HQDA), bisphenol A dianhydride (B, 4,4'-bisphenol A dianhydride, BPADA), 1,3-dihydro-1,3-di Oxyphenyl-5-isobenzofurancarboxylate 3,3',4,4'-diphenyl Ammonium anhydride (3,3',4,4'-Diphenylsulfone tetracarboxylic dianhydride, DSDA), (1,3-dihydro-1,3-dioxo-5-isobenzofurancarboxylic acid phenylene ester, TAHQ), diphenylphosphonium tetracarboxylate Sulfonyldiphthalic anhydride (SO 2 DPA), cyclobutane-1, 2,3,4-tetracarboxylic dianhydride (CBDA), (isopropyldiphenoxy) bis(o-phenylene) One or more of isopropylidene di-phenoxy bis (phthalic anhydride), 6HBDA, etc., but not limited thereto.

二胺化合物包含:4,4-二胺基二苯醚 (4,4’-oxydianiline、4,4’-ODA)、3,4-二胺基二苯醚(3,4’-Oxydianiline、3,4’-ODA)、3,3’-二羥基-4,4’-二胺基聯苯(3,3’-dihydroxy-4,4’-diamino-biphenyl、HAB)、對苯二胺(para-phenylenediamine,p-PDA)、間苯二胺(m-PDA)、對亞甲基二胺(pMDA)、間亞甲基二胺(mMDA)、雙胺基苯氧基苯(Bis aminophenoxy benzene,133APB,134APB)、雙胺基苯氧基苯基六氟丙烷(bis aminophenoxy phenyl hexafluoropropane,4BDAF)、雙胺苯六氟丙烷(bis aminophenyl hexafluoropropane,33-6F,44-6F)、二胺基二苯碸(bis aminophenyl sulfone,4DDS,3DDS)、2,2-雙(4-[4-胺基苯氧基]苯基)丙烷(2,2-Bis(4-[4-aminophenoxy]phenyl)propane、BAPP)、2,2-雙(4-[3-胺基苯氧基]苯基)碸(2,2-Bis(4-[3-aminophenoxy]phenyl)sulfone、m-BAPS)、1,4-雙(4-胺基苯氧基)苯(1,4-Bis(4-aminophenoxy)benzene、TPE-Q)、1,3-雙(4-胺基苯氧基)苯(1,3-Bis(4-aminophenoxy)benzene、TPE-R)、1,3-雙(3-胺基苯氧基)苯(1,3-Bis(3-aminophenoxy)benzene、APB)、4,4-雙(4-胺基苯氧基)聯苯(4,4'-Bis(4-aminophenoxy)biphenyl、BAPB)、1,4-雙(4-胺基苯氧基)-2,5-第三丁基苯(1,4-Bis(4-aminophenoxy)-2,5-di-t-butylbenzene、DTBAB)、4,4’-雙(4-胺基苯氧基)二苯甲酮(4,4’-Bis(4-aminophenoxy)benzophenone、BAPK)二(三氟甲基)二胺基聯苯(Bis(trifluoromethyl)benzidine,TFDB)環己烷二胺(Cyclohexanediamine,13CHD,14CHD)、雙胺基苯氧基苯基丙烷bis aminophenoxy phenyl propane,6HMDA)、雙胺基羥基苯基六氟丙烷(Bis aminohydroxyphenyl hexafluoropropane,DBOH)、雙胺基苯氧基二苯基碸(bis aminophenoxy diphenyl sulfone,DBSDA)等其中的一種或多種,但並不以此為限。The diamine compound comprises: 4,4-diaminodiphenyl ether (4,4'-oxydianiline, 4,4'-ODA), 3,4-diaminodiphenyl ether (3,4'-Oxydianiline, 3,4'-ODA), 3,3'-dihydroxy- 4,4'-diamino-biphenyl (HAB), para-phenylenediamine (p-PDA), m-phenylenediamine (m) -PDA), p-methylenediamine (pMDA), methylenediamine (mMDA), bisaminophenoxy benzene (133APB, 134APB), bisaminophenoxyphenyl hexa Bis-aminophen phenyl hexafluoropropane (4BDAF), bis aminophenyl hexafluoropropane (33-6F, 44-6F), bis aminophenyl sulfone (4DDS, 3DDS), 2, 2 -Bis(4-[4-aminophenoxy]phenyl)propane (2,2-Bis(4-[4-aminophenoxy]phenyl)propane, BAPP), 2,2-bis(4-[3- Aminophenoxy]phenyl)sulfonium (2,2-Bis(4-[3-aminophenoxy]phenyl)sulfone, m-BAPS), 1,4-bis(4-aminophenoxy)benzene (1) , 4-Bis(4-aminophenoxy)benzene, TPE-Q), 1,3-bis(4-aminophenoxy)benzene, TPE-R, 1 ,3-bis(3-aminophenoxy)benzene (1,3-Bis(3-aminophenoxy)benzene, APB) 4,4-bis(4-aminophenoxy)biphenyl (4,4'-Bis(4-aminophenoxy)biphenyl, BAPB), 1,4-bis(4-aminophenoxy)-2, 5-tert-butylbenzene (1,4-Bis(4-aminophenoxy)-2,5-di-t-butylbenzene, DTBAB), 4,4'-bis(4-aminophenoxy)diphenyl Cyclohexanediamine (13CHD, 14CHD) Bisaminophenoxy phenyl propane (6HMDA), Bis aminohydroxyphenyl hexafluoropropane (DBOH), bis aminophenoxy diphenyl sulfone , DBSDA), etc., one or more of them, but not limited to this.

含有聚醯胺酸溶液的溶劑,則包含N-甲基-2-吡咯烷酮(N-methyl-2-pyrrolidone、NMP)、N,N-二甲基乙醯胺 (N,N-dimethylacetamide、DMAc)、γ-丁內酯(γ-butyrolactone、GBL)、二甲基甲醯胺(Dimethylformamide、DMF)、2-丁氧基乙醇(2-Butoxyethanol)、2-乙氧基乙醇(2-Ethoxyethanol)等其中一種或多種溶劑混合,但並不以此為限。The solvent containing the polyaminic acid solution contains N-methyl-2-pyrrolidone (NMP), N,N-dimethylacetamide (N, N-dimethylacetamide, DMAc), γ-butyrolactone (GBL), Dimethylformamide (DMF), 2-Butoxyethanol, 2-B One or more solvents such as 2-Ethoxyethanol are mixed, but are not limited thereto.

在本創作的一些較佳實施例中,聚醯亞胺薄膜是採用聯苯四羧酸二酐(BPDA)、苯二胺(PDA)和二胺基二苯醚(ODA)來加以合成,且此三者較佳的莫耳分率比,較佳可為1:0.5:0.5、1:0.7:0.3或1:0.3:0.7。In some preferred embodiments of the present invention, the polyimide film is synthesized using biphenyltetracarboxylic dianhydride (BPDA), phenylenediamine (PDA), and diaminodiphenyl ether (ODA), and The preferred molar ratio of the three is preferably 1:0.5:0.5, 1:0.7:0.3 or 1:0.3:0.7.

之後,於第一絕緣基材101的第二表面101b上形成第一黏膠層103。再於第一黏膠層103的一側,形成第一金屬層102,使該第一黏膠層103位於第一絕緣基材101的第二表面101b與第一金屬層102之間,構成一三層的複合結構(如圖1B所繪示)。Thereafter, a first adhesive layer 103 is formed on the second surface 101b of the first insulating substrate 101. Forming a first metal layer 102 on one side of the first adhesive layer 103, such that the first adhesive layer 103 is located between the second surface 101b of the first insulating substrate 101 and the first metal layer 102, thereby forming a A three-layer composite structure (as shown in Figure 1B).

在本創作的一些實施例之中,第一金屬層102包含銅(Cu)、鋁(Al)、金(Au)、銀(Ag)、錫(Sn)、鉛(Pb)、鉛錫合金(Sn-Pb Alloy)、鐵(Fe)、鈀(Pd)、鎳(Ni)、鉻(Cr)、鉬(Mo)、鎢(W)、鋅(Zn)、錳(Mn)、鈷(Co)、不鏽鋼(stainless steel)或上述之任意組合。例如,在本實施例之中,第一金屬層102可以是厚度實質介於3μm至210μm之間的銅箔層。其係藉由熱壓法,利用熱可塑性的第一黏膠層103,以高溫高壓將第一金屬層102貼附於第一絕緣基材101的第二表面101b上。其中,第一黏膠層103包含由環氧樹脂(Epoxy Resins)、苯氧基樹脂(Phenoxy Resin)、丙烯酸樹脂(Acrylic Resin)、胺基甲酸乙酯樹脂(Polyurethane Resin)、矽橡膠(Silicone Rubber)系樹脂、聚對環二甲苯(Poly-para-xylylene;Parylene)系樹脂、雙馬來醯亞胺系樹脂(Bimaleimide Resin)、聚醯亞胺樹脂(Polyimide Resin)或其混合物。In some embodiments of the present creation, the first metal layer 102 comprises copper (Cu), aluminum (Al), gold (Au), silver (Ag), tin (Sn), lead (Pb), and lead-tin alloy ( Sn-Pb Alloy), iron (Fe), palladium (Pd), nickel (Ni), chromium (Cr), molybdenum (Mo), tungsten (W), zinc (Zn), manganese (Mn), cobalt (Co) , stainless steel (stainless steel) or any combination of the above. For example, in the present embodiment, the first metal layer 102 may be a copper foil layer having a thickness substantially between 3 μm and 210 μm. The first metal layer 102 is attached to the second surface 101b of the first insulating substrate 101 at a high temperature and high pressure by a hot pressing method using the first adhesive layer 103 of thermoplasticity. The first adhesive layer 103 comprises Epoxy Resins, Phenoxy Resin, Acrylic Resin, Polyurethane Resin, Silicone Rubber. A resin, a poly-para-xylylene (Parylene) resin, a Bimaleimide Resin, a Polyimide Resin, or a mixture thereof.

接著,於第一絕緣基材101的第一表面101a進行一個改質製程104,藉以形成一改質表面101c,從而完成一個有膠系之單面板 結構的金屬基板10的製備(如圖1C所繪示)。在本創作的一些實施例之中,改質製程104可以是一種電漿處理製程。例如,採用氬氣(Ar)和氮氣(N2)的反應氣氛,對第一絕緣基材101的第一表面101a進行改質。其中,氣體流量實質介於50公升/分鐘(L/min)至100公升/分鐘之間;氬氣和氮氣二者的含量比,實質介於1:1至1:20之間;操作電壓實質介於300伏特(V)至600伏特之間;操作時間實質介於10秒至50秒之間。在本創作的一較佳實施例之中,改質製程104的氣體流量,實質為70公升/分鐘;氬氣和氮氣二者的含量比,實質為3:8;操作電壓實質為500伏特;操作時間為20秒。Then, a modification process 104 is performed on the first surface 101a of the first insulating substrate 101 to form a modified surface 101c, thereby completing a single-panel panel. Preparation of the structural metal substrate 10 (as shown in Figure 1C). In some embodiments of the present creation, the upgrading process 104 can be a plasma processing process. For example, the first surface 101a of the first insulating substrate 101 is modified by a reaction atmosphere of argon (Ar) and nitrogen (N2). Wherein, the gas flow rate is substantially between 50 liters/min (L/min) and 100 liters/min; the content ratio of argon gas and nitrogen gas is substantially between 1:1 and 1:20; Between 300 volts (V) and 600 volts; the operating time is essentially between 10 seconds and 50 seconds. In a preferred embodiment of the present invention, the gas flow rate of the reforming process 104 is substantially 70 liters/min; the content ratio of argon gas and nitrogen gas is substantially 3:8; the operating voltage is substantially 500 volts; The operating time is 20 seconds.

在本創作的另外一些實施例之中,改質製程104可以是一種紫外光照射製程。例如,在真空度實質為2torr的條件下,採用波長實質介於180μm至270μm之間的紫外光,對第一絕緣基材101的第一表面101a進行照射,照射時間實質介於20秒至80秒之間。在本創作的一些實施例之中,較佳是以波長為182μm、184μm或254μm的紫外光,對第一絕緣基材101的第一表面101a照射60秒。其中,又以波長為182μm的紫外光效果尤佳。In still other embodiments of the present disclosure, the upgrading process 104 can be an ultraviolet light irradiation process. For example, under the condition that the degree of vacuum is substantially 2 torr, the first surface 101a of the first insulating substrate 101 is irradiated with ultraviolet light having a wavelength substantially between 180 μm and 270 μm, and the irradiation time is substantially between 20 seconds and 80. Between seconds. In some embodiments of the present invention, the first surface 101a of the first insulating substrate 101 is preferably irradiated for 60 seconds with ultraviolet light having a wavelength of 182 μm, 184 μm or 254 μm. Among them, the effect of ultraviolet light having a wavelength of 182 μm is particularly preferable.

在本創作的又一些實施例之中,改質製程104可以是一種鹼性溶液浸潤製程。例如,採用重量百分濃度(%)實質大於5的聯胺(Hydrazine,N2H4)、氫氧化鉀(Potassium Hydroxide,KOH)、氫氧化鈉(Sodium Hydroxide,NaOH)水溶液或其組合,對第一絕緣基材101的第一表面101a進行浸潤,反應時間實質介於20秒至80秒之間。In still other embodiments of the present disclosure, the upgrading process 104 can be an alkaline solution infiltration process. For example, using a hydrazine (N2H4), a potassium hydroxide (KOH), an aqueous solution of sodium hydroxide (NaOH), or a combination thereof in a weight percent concentration (%) substantially greater than 5, the first insulation The first surface 101a of the substrate 101 is wetted, and the reaction time is substantially between 20 seconds and 80 seconds.

經過改質製程104處理過後的改質表面101c,相對於導電率約0.055μS/cm(25℃),比阻抗值(Resistivity)實質為18MΩ.cm(25℃)的去離子純水,具有實質介於3達因/公分至30達因/公分之間的表面位能,較佳實質介於15達因/公分至25達因/公分之間。且改質表面101c的粗糙度實質小於3μm。The modified surface 101c after the modification process 104 has a specific resistance of about 0.055 μS/cm (25 ° C), and the specific impedance value (Resistivity) is substantially 18 MΩ. Cm (25 ° C) deionized pure water, with a surface potential between 3 dynes/cm and 30 dynes/cm, preferably between 15 dynes/cm and 25 dynes/cm. between. And the roughness of the modified surface 101c is substantially less than 3 μm.

接著,在第一絕緣基材101的改質表面101c上,貼附一層離型層105(如圖1D所繪示)。在本創作的一些實施例中,離型層105可以是,例如包含天然橡膠感壓膠、合成橡膠感壓膠、熱塑型彈性體感壓膠或上述之任一組合的彈性體型感壓膠,或是包含聚丙烯酸酯(Polyacrylate)、聚氨酯(Polyurethane)、聚氯乙烯、聚乙烯基醚(Polyvinyl Ether)的樹脂型感壓膠。Next, on the modified surface 101c of the first insulating substrate 101, a release layer 105 is attached (as shown in FIG. 1D). In some embodiments of the present invention, the release layer 105 may be, for example, an elastomeric pressure sensitive adhesive comprising a natural rubber pressure sensitive adhesive, a synthetic rubber pressure sensitive adhesive, a thermoplastic elastomeric pressure sensitive adhesive, or any combination thereof. Or a resin type pressure sensitive adhesive comprising Polyacrylate, Polyurethane, polyvinyl chloride or polyvinyl ether.

後續再於離型層105上,貼附一個至少包含有第二絕緣基材106和第二金屬層107的單面板結構的金屬基板11。並藉由一熱壓合製程109,使單面板結構的金屬基板11與單面板結構的金屬基板10緊密貼合,完成雙面板結構之金屬基板100的製備,使離型層105位於第一改質表面101c與第二絕緣基材106之間,且使第二絕緣基材106位於離型層105與第二金屬層107之間(如圖1E所繪示)。Subsequent to the release layer 105, a metal substrate 11 having a single-panel structure including at least a second insulating substrate 106 and a second metal layer 107 is attached. And the metal substrate 11 of the single-panel structure is closely adhered to the metal substrate 10 of the single-panel structure by a thermal pressing process 109, and the preparation of the metal substrate 100 of the double-panel structure is completed, so that the release layer 105 is located in the first modification. The second insulating substrate 106 is disposed between the release layer 105 and the second metal layer 107 (as shown in FIG. 1E).

在本實施例中,單面板結構的金屬基板11與單面板結構的金屬基板10一樣,皆為有膠系之單面板結構的金屬基板。其中,單面板結構的金屬基板11,還包含一個第二黏膠層108,位於第二絕緣基材106與第二金屬層107之間,用來將第二金屬層107與第二絕緣基材106貼合。In the present embodiment, the metal substrate 11 of the single-panel structure is the same as the metal substrate 10 of the single-panel structure, and is a metal substrate having a rubber-based single-panel structure. The metal substrate 11 of the single-panel structure further includes a second adhesive layer 108 between the second insulating substrate 106 and the second metal layer 107 for using the second metal layer 107 and the second insulating substrate. 106 fit.

在本創作的一些實施例之中,熱壓合製程109可以示一種熱板壓合製程,其壓合溫度實質大於50℃,較佳介於120℃至500℃之間,又以250℃為更佳。壓合壓力實質大於0.3公斤/平方公分(Kg/cm2),較佳實質介於15公斤/平方公分至90公斤/平方公分之間,又以20公斤/平方公分為更佳。而在本創作的一些實施例之中,熱壓合製程109可以示一種熱滾壓合製程,壓合溫度實質大於50℃,較佳介於150℃至380℃之間,又以250℃為更佳。壓合壓力實質大於3KN/cm,較佳實質介於3KN/cm至30KN/cm之間,又以20KN/cm為更佳。壓合張力實質大於0.5Kg。In some embodiments of the present creation, the thermocompression bonding process 109 may show a hot plate pressing process, wherein the pressing temperature is substantially greater than 50 ° C, preferably between 120 ° C and 500 ° C, and further 250 ° C. good. The pressing pressure is substantially greater than 0.3 kg/cm 2 (Kg/cm 2 ), preferably between 15 kg/cm 2 and 90 kg/cm 2 , and more preferably 20 kg/cm 2 . In some embodiments of the present invention, the thermocompression bonding process 109 may show a hot rolling process, the pressing temperature is substantially greater than 50 ° C, preferably between 150 ° C and 380 ° C, and further 250 ° C. good. The pressing pressure is substantially greater than 3 KN/cm, preferably substantially between 3 KN/cm and 30 KN/cm, and more preferably 20 KN/cm. The press tension is substantially greater than 0.5 Kg.

值得注意的是,貼附於第一絕緣基材101的第一改質表面101c之單面板結構的金屬基板,也可具有與第一絕緣基材101的第一改質表面101c相同的第二改質表面。例如請參照圖2,圖2係根據本創作的另一實施例所繪示的雙面板結構之金屬基板200的結構剖面圖。其中,雙面板結構之金屬基板200與圖1E的雙面板結構之金屬基板100結構類似,皆係由兩個有膠系之單面板結構的金屬基板10和21(包含第二絕緣基材206、第二黏膠層208和第二金屬層207)所構成。差別僅在於,單面板結構的金屬基板21的第二絕緣基材206面對離型層105的一側,具有與第一絕緣基材101的第一改質表面101c相同的第二改質表面206c。由於單面板結構的金屬基板10的結構與製作方法已詳述如前,故詳細流程不在此贅述,相同的元件將以相同的元件符號加以描述。It should be noted that the metal substrate of the single-panel structure attached to the first modified surface 101c of the first insulating substrate 101 may also have the same second surface as the first modified surface 101c of the first insulating substrate 101. Modify the surface. For example, please refer to FIG. 2. FIG. 2 is a cross-sectional view showing the structure of a metal substrate 200 of a double-panel structure according to another embodiment of the present invention. The metal substrate 200 of the double-panel structure is similar to the metal substrate 100 of the double-panel structure of FIG. 1E, and is composed of two metal substrates 10 and 21 having a single-panel structure with a glue system (including a second insulating substrate 206, The second adhesive layer 208 and the second metal layer 207) are formed. The only difference is that the second insulating substrate 206 of the metal substrate 21 of the single-panel structure faces the side of the release layer 105, and has the same second modified surface as the first modified surface 101c of the first insulating substrate 101. 206c. Since the structure and manufacturing method of the metal substrate 10 of the single-panel structure have been described in detail as before, the detailed process is not described herein, and the same components will be described by the same component symbols.

另外值得注意的是,雖然上述實施例中,雙面板結構之金屬基板皆係以兩個有膠系之單面板結構的金屬基板所構成。但在本創作的一些實施例之中,雙面板結構之金屬基板其中之一者或二者都,可以是無膠系之單面板結構的金屬基板。It is also worth noting that, in the above embodiments, the metal substrates of the double-panel structure are composed of two metal substrates having a single-panel structure. However, in some embodiments of the present invention, one or both of the metal substrates of the double-panel structure may be a metal substrate having a single-panel structure without a glue.

例如請參照圖3,圖3係根據本創作的又一實施例所繪示的雙面板結構之金屬基板300的結構剖面圖。其中,雙面板結構之金屬基板300與圖1E的雙面板結構之金屬基板100結構類似,皆係由兩個單面板結構的金屬基板10和30所構成。差別僅在於,貼附於第一絕緣基材101的第一改質表面101c之單面板結構的金屬基板30,為無膠系之單面板結構的金屬基板。其中,單面板結構的金屬基板30包含第二絕緣基材206以及第二金屬層307,且第二金屬層307直接貼附於第二絕緣基材306的一側,使第二絕緣基材306位於第二金屬層307與第一絕緣基材101的第一改質表面101c之間。由於單面板結構的金屬基板10的結構與製作方法已詳述如前,故詳細流程不在此贅述,相同的元件將以相同的元件符號加以描述。For example, please refer to FIG. 3. FIG. 3 is a cross-sectional view showing the structure of a metal substrate 300 of a double-panel structure according to still another embodiment of the present invention. The metal substrate 300 of the double-panel structure is similar to the metal substrate 100 of the double-panel structure of FIG. 1E, and is composed of two metal substrates 10 and 30 of a single-panel structure. The only difference is that the metal substrate 30 of the single-panel structure attached to the first modified surface 101c of the first insulating substrate 101 is a metal substrate having a single-panel structure without a glue. The metal substrate 30 of the single-panel structure includes the second insulating substrate 206 and the second metal layer 307, and the second metal layer 307 is directly attached to one side of the second insulating substrate 306, so that the second insulating substrate 306 Located between the second metal layer 307 and the first modified surface 101c of the first insulating substrate 101. Since the structure and manufacturing method of the metal substrate 10 of the single-panel structure have been described in detail as before, the detailed process is not described herein, and the same components will be described by the same component symbols.

例如請參照圖4,圖4係根據本創作的再另一實施例所繪示的雙面板結構之金屬基板400的結構剖面圖。其中,雙面板結構之金屬基板400與圖1E的雙面板結構之金屬基板100結構類似,皆係由兩個單面板結構的金屬基板40和41所構成。差別僅在於,構成雙面板結構之金屬基板400的兩個單面板結構的金屬基板40和41。都是無膠系之單面板結構的金屬基板。其中,單面板結構的金屬基板40包含第一絕緣基材401以及直接貼附於第一絕緣基材401相對於第一改質表面401c之一側的第一金屬層402;而單面板結構的金屬基板41包含第二絕緣基材406以及直接貼附於第二絕緣基材406面對離型層105之相反一側的第二金屬層407。For example, please refer to FIG. 4. FIG. 4 is a cross-sectional view showing the structure of a metal substrate 400 of a double-panel structure according to still another embodiment of the present invention. The metal substrate 400 of the double-panel structure is similar to the metal substrate 100 of the double-panel structure of FIG. 1E, and is composed of two metal substrates 40 and 41 of a single-panel structure. The only difference is the metal substrates 40 and 41 of the two single-panel structures constituting the metal substrate 400 of the double-panel structure. They are metal substrates with a single-panel structure without glue. The metal substrate 40 of the single-panel structure includes a first insulating substrate 401 and a first metal layer 402 directly attached to one side of the first insulating substrate 401 with respect to the first modified surface 401c; The metal substrate 41 includes a second insulating substrate 406 and a second metal layer 407 directly attached to the opposite side of the second insulating substrate 406 facing the release layer 105.

請再參照圖1E,後續將具有兩個有膠系單面板結構之金屬基板10和11的雙面板結構之金屬基板100,進行軟性印刷電路板的全製程加工,包括濕製程加工,例如曝光、顯影、蝕刻、去膜、及電鍍加工,以及高溫段之後續加工後形成兩面印刷電路板,再將兩個有膠式印刷電路板分離,可同時形成兩個有膠系單面軟性印刷電路板(未繪示),進而大幅增加軟性印刷電路板製程效率與產能。Referring to FIG. 1E again, the metal substrate 100 having the double-panel structure of the metal substrates 10 and 11 having the rubber single-panel structure is subsequently subjected to full-process processing of the flexible printed circuit board, including wet processing, such as exposure, Development, etching, stripping, and electroplating, and subsequent processing of the high temperature section to form a two-sided printed circuit board, and then separating the two adhesive printed circuit boards, and simultaneously forming two plastic single-sided flexible printed circuit boards (not shown), which in turn greatly increases the process efficiency and productivity of flexible printed circuit boards.

在本創作的一些實施例之中,可使用機械力將構成雙面板結構之金屬基板100的兩個單面板結構之金屬基板10或11分離(如圖1F所繪示)。在本創作的實施例之中,將雙面板結構之金屬基板100,分離兩個單面板結構之金屬基板10或11所需的剝離強度實質大於80克/公分(gf/cm),較佳介於100克/公分至600克/公分之間。In some embodiments of the present invention, the metal substrates 10 or 11 of the two single-panel structures constituting the metal substrate 100 of the double-panel structure may be separated by mechanical force (as shown in FIG. 1F). In the embodiment of the present invention, the peeling strength required to separate the metal substrates 10 or 11 of the two single-panel structures from the metal substrate 100 of the double-panel structure is substantially greater than 80 g/cm (gf/cm), preferably between 100 g / cm to 600 g / cm.

由於藉由熱壓合製程109所形成的雙面板結構之金屬基板100,相較於單面板結構之金屬基板10或11,可提供厚度,補強單面板結構之金屬基板10或11的挺性,賦予單面板結構之金屬基板10或11更優異的機械性質,可以防止金屬基板在軟性印刷電路板的全製程加工,包括濕製程加工,例如曝光、顯影、蝕刻、去膜、及電鍍加工, 以及高溫段加工,例如燒烤、快壓、覆蓋層熟化、及表面裝貼,等過程中,發生折傷、墊傷或爆板等問題。Due to the metal substrate 100 of the double-panel structure formed by the thermal compression bonding process 109, the thickness of the metal substrate 10 or 11 reinforcing the single-panel structure can be provided as compared with the metal substrate 10 or 11 of the single-panel structure. The metal substrate 10 or 11 imparting a single-panel structure has superior mechanical properties, and can prevent the entire processing of the metal substrate in the flexible printed circuit board, including wet processing such as exposure, development, etching, film removal, and electroplating. And high-temperature processing, such as barbecue, fast pressure, cover layer curing, and surface mounting, etc., problems such as breakage, padding or blasting.

而又由於第一絕緣基材101之改質表面101c的表面位能,實質小於一般黏膠的表面位能(約大於3達因/公分)。因此可輕易移除離型層105,使單面板結構之金屬基板10或11彼此分離,而不殘留黏膠,從而提升軟性印刷電路板製程的製程良率。在本創作的實施例之中,分離後的兩個單面板結構之金屬基板10和11,二者的第一絕緣基材101和第二絕緣基材106厚度,與單面板結構之金屬基板10和11二者尚未貼合之前第一絕緣基材101和第二絕緣基材106的起始厚度相比,其變化量實質小於10%。另外,第一絕緣基材10之第一改質表面101c的表面粗糙度,與其尚未和離型層貼合時的原始表面粗糙度相比,其變化量實質小於10%。Moreover, due to the surface potential energy of the modified surface 101c of the first insulating substrate 101, it is substantially smaller than the surface potential energy of the general adhesive (about 3 dynes/cm). Therefore, the release layer 105 can be easily removed, and the metal substrate 10 or 11 of the single-panel structure can be separated from each other without leaving adhesive, thereby improving the process yield of the flexible printed circuit board process. In the embodiment of the present invention, the separated metal substrates 10 and 11 of the single-panel structure, the thicknesses of the first insulating substrate 101 and the second insulating substrate 106 of the two, and the metal substrate 10 of the single-panel structure The amount of change of the first insulating substrate 101 and the second insulating substrate 106 is substantially less than 10% compared to the initial thickness of the first insulating substrate 101 and the first insulating substrate 106 before they are bonded. In addition, the surface roughness of the first modified surface 101c of the first insulating substrate 10 is substantially less than 10% compared to the original surface roughness when it has not been bonded to the release layer.

根據上述實施例,本創作的是提供一種金屬基板,其係將兩個分別包含有絕緣基材和金屬層的單面板結構之金屬基板,以離型層將二者貼合。並在其中一個單面板結構之金屬基板的絕緣基材與離型層貼合的界面上,進行改質製程,使其具有一改質表面。當此一絕緣基材在與離型層(或另一絕緣基材)分離時,此一絕緣基材之改質表面的表面粗糙度與尚未與離型層貼合前的起始表面粗糙度相比,其變化量實質小於10%。According to the above embodiment, the present invention provides a metal substrate in which two metal substrates each having a single-panel structure including an insulating substrate and a metal layer are bonded together by a release layer. And on the interface of the insulating substrate of the metal substrate of the single-panel structure and the release layer, the modification process is performed to have a modified surface. When the insulating substrate is separated from the release layer (or another insulating substrate), the surface roughness of the modified surface of the insulating substrate and the initial surface roughness before bonding to the release layer In comparison, the amount of change is substantially less than 10%.

當採用此一雙層金屬基板來製作印刷電路基板時,不但可補強單面板結構之金屬基板的結構強度,防止其在印刷電路基板製程中發生折傷、墊傷或爆板,從而提升印刷電路基板的良率。另外,可以利用絕緣基材之改質表面的表面位能較低,可在和離型層貼合之後再輕易與之分離,而不殘留黏膠的特性,將兩個單面板結構之金屬基板暫時壓合,待經過印刷電路基板全製程之後再予分離,藉以同時製作出兩個具有單面板結構的印刷電路基板,如此更可大幅增加印刷 電路基板製程的效率與產能。When the printed circuit board is fabricated by using the two-layer metal substrate, the structural strength of the metal substrate of the single-panel structure can be enhanced, and the printed circuit can be prevented from being damaged, padded or exploded in the process of the printed circuit board, thereby improving the printed circuit. The yield of the substrate. In addition, the surface of the modified substrate can be made of a lower surface energy, and can be easily separated from the release layer, without leaving the characteristics of the adhesive, and the metal substrate of the two single-panel structure Temporarily press-fitted, and then separated after passing through the entire process of the printed circuit board, thereby simultaneously producing two printed circuit boards having a single-panel structure, thereby greatly increasing printing The efficiency and productivity of circuit board processes.

雖然本創作已以較佳實施例揭露如上,然其並非用以限定本創作。任何該領域中具有通常知識者,在不脫離本創作之精神和範圍內,當可作些許之更動與潤飾。因此本創作之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed above in the preferred embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the field can make some changes and refinements without departing from the spirit and scope of this creation. Therefore, the scope of protection of this creation is subject to the definition of the scope of the patent application attached.

10‧‧‧單面板結構之金屬基板10‧‧‧Metal substrate with single-panel structure

11‧‧‧單面板結構之金屬基板11‧‧‧Metal substrate with single-panel structure

100‧‧‧雙面板結構之金屬基板100‧‧‧Double-panel metal substrate

101‧‧‧第一絕緣基材101‧‧‧First insulating substrate

101b‧‧‧第一絕緣基材的第二表面101b‧‧‧Second surface of the first insulating substrate

101c‧‧‧第一改質表面101c‧‧‧First modified surface

102‧‧‧第一金屬層102‧‧‧First metal layer

103‧‧‧第一黏膠層103‧‧‧First adhesive layer

105‧‧‧離型層105‧‧‧ release layer

106‧‧‧第二絕緣基材106‧‧‧Second insulating substrate

107‧‧‧第二金屬層107‧‧‧Second metal layer

108‧‧‧第二黏膠層108‧‧‧Second adhesive layer

109‧‧‧熱壓合製程109‧‧‧Hot press process

Claims (10)

一種金屬基板,包括:一第一絕緣基材,具有一第一改質表面以及相對於該第一改質表面的一第二表面;一第一金屬層,面對該第二表面;一離型層,貼合於該第一改質表面,使該第一絕緣基材位於該離型層與該第一金屬層之間;一第二絕緣基材,位於該離型層的一側,並使該離型層位於該第一改質表面與該第二絕緣基材之間;以及一第二金屬層,位於該第二絕緣基材的一側,使該第二絕緣基材位於該離型層與該第二金屬層之間;其中該第一改質表面具有一初始表面粗糙度,當該第一改質表面與該離型層分離之後,該初始表面粗糙度具有實質小於10%的一變化量。 A metal substrate comprising: a first insulating substrate having a first modified surface and a second surface opposite to the first modified surface; a first metal layer facing the second surface; a layer disposed on the first modified surface such that the first insulating substrate is between the release layer and the first metal layer; and a second insulating substrate is disposed on a side of the release layer And the release layer is located between the first modified surface and the second insulating substrate; and a second metal layer is disposed on a side of the second insulating substrate such that the second insulating substrate is located Between the release layer and the second metal layer; wherein the first modified surface has an initial surface roughness, and the initial surface roughness has substantially less than 10 after the first modified surface is separated from the release layer A change in %. 如申請專利範圍第1項所述之金屬基板,更包括一第一黏膠層,位於該第一絕緣基材與該第一金屬層之間。 The metal substrate of claim 1, further comprising a first adhesive layer between the first insulating substrate and the first metal layer. 如申請專利範圍第1項所述之金屬基板,更包括一第二黏膠層,位於該第二絕緣基材與該第二金屬層之間。 The metal substrate of claim 1, further comprising a second adhesive layer between the second insulating substrate and the second metal layer. 如申請專利範圍第1項所述之金屬基板,更包括:一第一黏膠層,位於該第一絕緣基材與該第一金屬層之間;以及一第二黏膠層,位於該第二絕緣基材與該第二金屬層之間。 The metal substrate of claim 1, further comprising: a first adhesive layer between the first insulating substrate and the first metal layer; and a second adhesive layer located at the first Between the two insulating substrates and the second metal layer. 如申請專利範圍第1項所述之金屬基板,其中該第二絕緣基材面對該離型層的一側,具有與該第一改質表面相同的一第二改質表面。 The metal substrate of claim 1, wherein the second insulating substrate faces the side of the release layer and has a second modified surface identical to the first modified surface. 如申請專利範圍第1項所述之金屬基板,其中該離型層包含一彈性體型感壓膠、一樹脂型感壓膠或二者之組合。 The metal substrate according to claim 1, wherein the release layer comprises an elastomer type pressure sensitive adhesive, a resin type pressure sensitive adhesive or a combination of the two. 如申請專利範圍第1項所述之金屬基板,其中該第一改質表面包括至少一官能基,該至少一官能基係選自於由-CH3 、-CH2 、-O-、-COOH、-COOHCH3 、-COOHC2 H5 、-NH2 、-NO2 、-OH、-CONH2 、-CONH、-SiO2 及上述任一組合所組成的一族群。The metal substrate of claim 1, wherein the first modified surface comprises at least one functional group selected from the group consisting of -CH 3 , -CH 2 , -O-, -COOH a group consisting of -COOHCH 3 , -COOHC 2 H 5 , -NH 2 , -NO 2 , -OH, -CONH 2 , -CONH, -SiO 2 and any combination of the above. 如申請專利範圍第1項所述之金屬基板,其中該第一改質表面具有實質大於3達因/公分(dyn/cm)的表面位能(surface energy)。 The metal substrate of claim 1, wherein the first modified surface has a surface energy of substantially greater than 3 dynes/cm (dyn/cm). 如申請專利範圍第1項所述之金屬基板,其中該第一金屬層和該第二金屬層包含:銅(Cu)、鋁(Al)、金(Au)、銀(Ag)、錫(Sn)、鉛(Pb)、鉛錫合金(Sn-Pb Alloy)、鐵(Fe)、鈀(Pd)、鎳(Ni)、鉻(Cr)、鉬(Mo)、鎢(W)、鋅(Zn)、錳(Mn)、鈷(Co)、不鏽鋼(stainless steel)或上述之任意組合。 The metal substrate of claim 1, wherein the first metal layer and the second metal layer comprise: copper (Cu), aluminum (Al), gold (Au), silver (Ag), tin (Sn ), lead (Pb), lead-tin alloy (Sn-Pb Alloy), iron (Fe), palladium (Pd), nickel (Ni), chromium (Cr), molybdenum (Mo), tungsten (W), zinc (Zn) ), manganese (Mn), cobalt (Co), stainless steel (stainless steel) or any combination of the above. 如申請專利範圍第1項所述之金屬基板,其中該第一絕緣基材和該第二絕緣基材的材質,分別係選自於由聚醯亞胺(Polyimide,PI)、聚乙烯對苯二甲酸酯(Polyethylene Terephthalate,PET)、鐵氟龍(Teflon)、液晶高分子(Liquid Crystal Polymer,LCP)、聚乙烯(Polyethylene,PE)、聚丙烯(Polypropylene,PP)、聚苯乙烯(Polystyrene,PS)、聚氯乙烯(Polyvinyl Chloride,PVC)、尼龍(Nylon or Polyamides)、壓克力(Acrylic)、ABS塑膠(Acrylonitrile-Butadiene-Styrene)、酚樹脂(Phenolic Resins)、環氧樹脂(Epoxy)、聚酯(Polyester)、矽膠(Silicone)、聚氨基甲酸乙酯(Polyurethane,PU)、聚醯胺-醯亞胺(polyamide-imide,PAI)及上述任一組合所組成的一族群。 The metal substrate according to claim 1, wherein the materials of the first insulating substrate and the second insulating substrate are respectively selected from polyimide (PI), polyethylene to benzene. Polyethylene Terephthalate (PET), Teflon, Liquid Crystal Polymer (LCP), Polyethylene (PE), Polypropylene (PP), Polystyrene (Polystyrene) , PS), Polyvinyl Chloride (PVC), Nylon (Nylon or Polyamides), Acrylic, ABS (Acrylonitrile-Butadiene-Styrene), Phenolic Resins, Epoxy, Polyester, Silicone, Polyurethane (Polyurethane, PU), polyamine-imide (PAI), and a combination of any of the above.
TW103204002U 2014-03-07 2014-03-07 Metal substrate TWM483633U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI488549B (en) * 2014-03-07 2015-06-11 Azotek Co Ltd Metal substrate and fabricating method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI488549B (en) * 2014-03-07 2015-06-11 Azotek Co Ltd Metal substrate and fabricating method thereof

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