TWM480759U - Chemical mechanical polishing dresser with particular cutting capability - Google Patents

Description

Chemical mechanical polishing dresser with specific cutting ability

This creation is about a chemical mechanical polishing dresser, especially a chemical mechanical polishing dresser with specific cutting capabilities with abrasive specifications.

Chemical Mechanical Polishing (CMP) is a common grinding process in various industries. The surface of various articles can be ground using a chemical polishing process, including ceramic, tantalum, glass, quartz, or metal wafers. In addition, with the rapid development of integrated circuits, chemical mechanical polishing can achieve large-area planarization, so it is one of the common wafer planarization techniques in semiconductor manufacturing. In particular, as the volume of the transistor shrinks, the number of chemical mechanical polishing processes increases. For example, in the 28 nm line width process, the number of chemical mechanical polishing processes can be as high as 30 times. .

The semiconductor industry currently spends more than $1 billion annually on manufacturing silicon wafers that must have very flat and smooth surfaces. There are many techniques for fabricating smooth and flat surface tantalum wafers. One of the most common processes is called chemical mechanical polishing (CMP), which involves the use of a polishing pad in combination with a slurry. The most important thing in all CMP processes is the uniformity of the wafer, the IC line. The smoothness of the road, the removal rate of the yield, the life of the CMP consumables, etc., allow the chemical mechanical polishing to achieve the highest level of performance.

In the chemical mechanical polishing process of semiconductors, the wafer (or other semiconductor components) is contacted by a polishing pad (Pad), and the polishing liquid is used as needed to pass the chemical reaction and physical mechanical force to remove the wafer. Impurity or uneven structure of the surface; when the polishing pad is used for a certain period of time, since the grinding debris generated by the grinding process is accumulated on the surface of the polishing pad, the polishing effect and the efficiency are lowered, and therefore, the conditioner can be used for grinding. The surface of the pad is ground to re-roughen the surface of the pad and maintain it in an optimal state of grinding.

A known method, such as the Republic of China Patent Publication No. 487615, discloses a method and apparatus for controlling the adjustment of a polishing pad using non-contact ultrasonic technology. Ultrasonic transducers are used to measure the thickness of each layer of the polishing pad. The transducers can be placed adjacent to the workpiece carrier, the pad conditioner, or at other suitable locations to monitor the parameters of the pad and provide feedback to the carrier and/or adjustment assembly. The measurement data may include any or many useful pad parameters such as pad thickness, pad compression force, pad density, and pad fluid saturation. All such data can be used to control various processing variables, including pad adjustment, removal rate, and other variables to extend the life of the pad and improve its planarization.

In addition, another Republic of China Patent Publication No. I229381 discloses a control system for a polishing pad profile, which is suitable for a chemical mechanical polishing device comprising a polishing pad, a polishing table, a polishing head and a regulator, wherein the polishing pad comprises a light transmission Area. The control system includes at least one light source, a detector, and A processor. The light source is disposed in the polishing table and corresponds to the light transmitting region of the polishing pad. The detector is located above the polishing pad to detect light emitted by the light source passing through the light transmitting region of the polishing pad. The processor estimates the thickness of the polishing pad based on the result detected by the detector to determine the contour of the polishing pad, and then sends a processing signal to the regulator to adjust the processing of the regulator. Since the present invention can control the polishing pad profile on the wire, it is possible to reduce the variation of the unevenness in the wafer to obtain a flat polishing pad profile.

However, in the above chemical mechanical polishing dresser, the ultrasonic polishing or optical method is used to measure the thickness of the polishing pad, thereby determining the service life of the polishing pad or the dresser after the grinding process, but it is still impossible to evaluate the dressing process of the dresser. Pre-grinding performance. Therefore, there is an urgent need to develop a chemical mechanical polishing dresser having a specific cutting ability with a grinding index for judging the grinding performance of the chemical mechanical polishing dresser having a specific cutting ability.

The main purpose of the present work is to provide a CMP polishing dresser having a specific cutting ability with a grinding index, by which the grinding performance of the CMP polishing dresser having a specific cutting ability can be judged.

In order to achieve the above object, the present invention provides a CMP polishing dresser having a specific cutting capability, comprising: a substrate; a bonding layer disposed on the substrate; and a plurality of abrasive particles embedded in the abrasive particles In the bonding layer, and the abrasive particles are fixed to the substrate by the bonding layer; wherein the chemical mechanical polishing repair with specific cutting ability The whole machine has a grinding index, and the grinding index is used to judge the grinding performance of the chemical mechanical polishing dresser having a specific cutting ability. According to this, the creation can further classify various kinds of trimmers (for example, abrasive particles of different particle sizes or different abrasive particles, etc.) according to the difference of the grinding index, so as to provide users with actual grinding processing. The above requirements are to select a dresser that meets its grinding index.

In the CMP polishing dresser with specific cutting ability of the present invention, the grinding index is the amount of wear of the polishing pad in a unit time when the polishing pad is polished by the chemical mechanical polishing dresser having a specific cutting ability. For example, the amount of reduction in the thickness of the polishing pad during the grinding process is reduced.

In the chemical mechanical polishing dresser having the specific cutting ability of the present invention, the rotation speed of the chemical mechanical polishing dresser having the specific cutting ability and the rotation speed of the polishing pad can be arbitrarily changed according to the grinding processing conditions or the user's demand, wherein The CMP mechanical dresser having a specific cutting ability can rotate at a speed of 5 rpm (revolutions per minute) to 200 rpm; in one aspect of the present invention, the CMP length of the CMP can be rotated to 60 rpm. 100 rpm; in another aspect of the creation, the CMP polishing dresser having a specific cutting capability may have a rotational speed of 75 rpm. In addition, in the CMP polishing dresser having the specific cutting ability of the present invention, the polishing pad can rotate from 5 rpm to 200 rpm; in one aspect of the present invention, the polishing pad can rotate from 80 rpm to 120 rpm; In another aspect of the creation, the polishing pad can be rotated at 100 rpm.

In the high wear chemical mechanical polishing dresser of this creation, The force applied to the polishing pad by the CMP abrasive dresser having a specific cutting ability may be arbitrarily changed according to the grinding processing conditions or the user's needs, wherein the CMP abrasive dresser having the specific cutting ability is applied to the polishing pad. The force can range from 2 pounds to 150 pounds; in one aspect of the creation, the chemical mechanical polishing dresser with specific cutting capabilities can be applied to the polishing pad at a force of 15 to 30 pounds; In another aspect, the CMP abrasive dresser having a particular cutting capability can have a force applied to the polishing pad of 25 pounds.

In the chemical mechanical polishing dresser having the specific cutting ability of the present invention, the grinding time of the chemical mechanical polishing dresser having the specific cutting ability applied to the polishing pad can be arbitrarily changed according to the grinding processing conditions or requirements, wherein The polishing time of the chemical mechanical polishing dresser having a specific cutting ability applied to the polishing pad may be 5 minutes to 20 minutes; in one aspect of the present invention, the chemical mechanical polishing dresser having a specific cutting ability is applied thereto. The polishing time of the polishing pad may be from 8 minutes to 12 minutes; in another aspect of the creation, the polishing time of the chemical mechanical polishing dresser having a specific cutting ability applied to the polishing pad may be 10 minutes.

In the CMP polishing dresser with specific cutting ability of the present invention, the grinding index can be divided into different grades or performances according to user requirements or grinding processing conditions, for example, the grinding index is divided into three, four, and five. , or other various grades; wherein, in one aspect of the creation, the abrasive index can have three levels of cutting capability, including: a high speed cutting capability level, a medium cutting capacity level, and a low speed cutting capability level. Wherein, the high-speed cutting capability level can represent that the polishing pad has an abrasion rate of more than 500 Micron/hour to provide the user with a dresser with a faster grinding rate; the medium cutting capacity level can represent that the polishing pad can be worn at a rate of 150 microns/hour to 500 microns/hour for user access A trimmer having a relatively stable polishing rate; and the low speed cutting capability rating can represent a wear rate of the polishing pad of less than 150 microns per hour to provide a user with a trimmer having a slower grinding rate.

In the CMP polishing dresser having the specific cutting ability of the present invention, the abrasive particles may be synthetic diamonds, natural diamonds, polycrystalline diamonds, or cubic boron nitride; in a preferred aspect of the present invention, These abrasive particles can be synthetic diamonds. On the other hand, in the planarized chemical mechanical polishing dresser of the present invention, the abrasive particles may have a particle diameter of 30 micrometers to 600 micrometers; in one aspect of the present invention, the particle diameters of the abrasive particles may be It is 300 microns.

In the CMP polishing dresser having the specific cutting ability of the present invention, the composition of the bonding layer or the composition or size of the abrasive particles may be arbitrarily changed according to the conditions and requirements of the grinding process, and the composition of the bonding layer may be ceramic Materials, brazing materials, plating materials, metal materials, or polymer materials are not limited to this creation. In one aspect of the present invention, the bonding layer can be a solder layer, and the solder layer can be less selected from the group consisting of iron, cobalt, nickel, chromium, manganese, lanthanum, aluminum, copper, and combinations thereof. . In another aspect of the present invention, the polymer material is an epoxy resin, a polyester resin, a polyacrylic resin, or a phenolic resin. In addition, in the CMP polishing dresser with specific cutting ability, the material and size of the substrate can be arbitrarily changed according to the conditions and requirements of the grinding process, wherein the material of the substrate can be stainless steel, die steel, metal Alloys, or ceramic materials, etc., this creation is not limited to this. In this In a preferred aspect of the creation, the material of the substrate may be a stainless steel substrate.

In summary, according to the CMP mechanical dresser with specific cutting ability, the grinding index of the polishing pad in a unit time can be provided, and the index is used to judge the chemical mechanical grinding with specific cutting ability. The grinding performance of the dresser makes it possible to select the required chemical mechanical polishing dresser with specific cutting capability depending on the process.

10, 20‧‧‧Chemical mechanical polishing dresser

11‧‧‧ polishing pad

12‧‧‧ wafer

13‧‧‧ stage

201‧‧‧Substrate

202‧‧‧bonding layer

203‧‧‧Abrasive particles

Figure 1 is a schematic diagram of the configuration of the chemical mechanical polishing apparatus of the present invention.

Figure 2 is a schematic illustration of a CMP polishing dresser with specific cutting capabilities.

Figure 3 is a comparison of the polishing rates of the CMP polishing dressers with specific cutting capabilities.

The embodiments of the present invention are described below by way of specific examples, and those skilled in the art can readily appreciate the other advantages and effects of the present invention from the disclosure herein. In addition, the present invention may be implemented or applied by various other specific embodiments, and various modifications and changes may be made without departing from the spirit of the invention.

Example 1

Please refer to FIG. 1 and FIG. 2, which are schematic diagrams of the configuration of the chemical mechanical polishing equipment with specific cutting ability. FIG. 2 is a creation tool. Schematic diagram of a CMP abrasive dresser with specific cutting capabilities. First, as shown in FIG. 2, a chemical mechanical polishing dresser 20 having a specific cutting capability is provided, comprising: a stainless steel substrate 201; a nickel-based metal solder bonding layer 202; and a plurality of abrasive particles 203. The abrasive particles 203 are embedded and fixed on the bonding layer 202, and the bonding layer 202 is fixed on the substrate 201. The abrasive particles 203 are diamond particles having a particle diameter of 300 micrometers and are ground. The particles 203 can be arranged in a conventional cloth drilling technique (for example, a template drilling), and the spacing and arrangement of the abrasive particles 203 can be controlled by a template (not shown), and the abrasive particles 203 are The tip is upward to form the orientation of a tip grinding surface, or the abrasive particles 203 are arbitrarily changed according to user requirements or processing conditions to have the same or different tip orientation; further, as shown in FIG. 1, the specific cutting ability The chemical mechanical polishing dresser 10 has a grinding index, and the tips of the abrasive particles of the chemical mechanical polishing dresser 10 face the polishing pad 11 (please refer to 2), and a wafer 12 to be processed is disposed on the polishing pad 11, wherein the polishing pad 11 is disposed on the stage 13 and the polishing pad 11 is made of polyurethane and provides a downward direction. The force causes the chemical mechanical polishing dresser 10 to contact the polishing pad 11, and the polishing index is that the polishing pad 11 is polished in the unit when the polishing pad 11 is polished by the chemical mechanical polishing dresser 10 having a specific cutting ability. The amount of wear during the time, and the grinding index is used to judge the polishing rate or the grinding performance of the CMP polishing dresser 10 having a specific cutting ability.

In the first embodiment of the present invention, please refer to FIG. 1 together, which includes a preferred grinding processing parameter, including: the chemical machine with specific cutting ability The rotational speed of the mechanical polishing dresser 10 was 75 rpm, and the rotational speed of the polishing pad 11 was 100 rpm. In addition, the chemical mechanical polishing dresser 10 having a specific cutting ability is applied to the polishing pad 11 with a force of 25 pounds, and the polishing time of the chemical mechanical polishing dresser having a specific cutting ability applied to the polishing pad is 10 minutes. The grinding processing reference can be arbitrarily changed according to the needs of the user.

The grinding index of the CMP polishing dresser having a specific cutting ability, which indicates that the polishing pad 11 is measured in a unit time after the polishing pad 11 is ground for a specific time by the CMP polishing machine 10 having a specific cutting ability. The amount of wear, for example, the amount of reduction per hour of the thickness of the polishing pad, that is, expressed in units of micrometers per hour, and the grinding index of the inventive example 1 is used to judge the chemical mechanical polishing conditioner 10 having a specific cutting ability. Grinding performance. After the measurement, the greater the value of the abrasion amount per unit time of the polishing pad obtained, the faster the polishing rate of the dresser, and the type of chemical mechanical polishing dresser can provide faster grinding processing; When the obtained polishing pad has a small amount of wear per unit time, indicating that the polishing rate of the dresser is slower, this type of chemical mechanical polishing dresser can provide slower grinding processing, even by selecting The trimmer of the indicator is suitably ground to obtain a better flatness of the grinding quality. The chemical mechanical polishing dresser 10 having different grinding indexes or abrasion performance can be obtained by the present invention example 1. Therefore, the required chemical mechanical polishing dresser 10 can be selected according to various processing processes or user requirements to extend the dresser or polish. Pad life and improve grinding efficiency and efficiency.

Example 2

Embodiment 2 is substantially the same as the chemical mechanical polishing dresser having the specific cutting ability described in the foregoing Embodiment 1, except that Embodiment 2 further distinguishes the grinding index of the chemical mechanical polishing dresser having the specific cutting ability. There are three levels of cutting capability, including: a high speed cutting capability rating, a medium cutting capability rating, and a low speed cutting capability rating, wherein the high speed cutting capability rating indicates that the polishing pad has an attrition rate greater than 500 microns per hour, the medium The cutting ability rating indicates that the polishing pad has an attrition rate of from 150 micrometers per hour to 500 micrometers per hour, and the low speed cutting capability rating indicates that the polishing pad has an attrition rate of less than 150 micrometers per hour to 0.5 micrometers per hour.

Please refer to FIG. 3, which is a comparison diagram of the polishing rate of the chemical mechanical polishing dresser with specific cutting ability. Among them, three trimmers with different particle sizes are selected, wherein the sample 1 is the average particle diameter of the abrasive particles. A 350 micron dresser, a sample 2 is a dresser having an average particle diameter of 300 μm for grinding particles, and a sample 3 is a dresser having an average particle diameter of 250 μm of the abrasive particles, and the thickness of the polishing pad is performed according to the polishing conditions of the above Example 1. Measurement and grinding rate calculation. The results after grinding showed that the polishing pad wear rate of sample 1 was 600 μm/hr, the polishing pad wear rate of sample 2 was 300 μm/hr, and the polishing pad wear rate of sample 3 was 100 μm/hr; The trimmers were differentiated according to the three cutting capability levels defined in Example 2, with sample 1 classified as a high speed cutting capability level, sample 2 classified as a medium cutting capacity level, and sample 3 classified as a low speed cutting capability level.

According to the grinding index of the creation example 2, the user can provide various polishing pad grinding by using different grades of chemical mechanical polishing dressers. When the user needs a fast grinding rate, a chemical mechanical polishing dresser with a high-speed cutting capability can be used to grind the polishing pad; when the user needs a slow grinding rate, a chemical mechanical polishing dresser with a low-speed cutting capability can be used. Grinding the polishing pad; when the user needs a more stable polishing rate, the polishing pad can be ground by a chemical mechanical polishing dresser of medium cutting capability. In the grinding index of the second embodiment of the present invention, the chemical mechanical polishing dresser of different grades can be replaced according to the process or the needs of the user. Therefore, the chemical mechanical polishing dresser having the specific cutting ability of the present invention can be customized according to the user. The different grinding indexes are set according to the requirements, and are not limited to the grinding index of the chemical mechanical polishing dresser having the specific cutting ability as described in the second embodiment of the present invention, and are classified into three cutting ability levels, and thus, during the chemical grinding process, the replacement is performed. Different grades of chemical mechanical polishing trimmers to achieve the desired purpose of the user.

The above-described embodiments are merely examples for convenience of description, and the scope of the claims is intended to be limited to the above embodiments.

10‧‧‧Chemical mechanical polishing dresser

11‧‧‧ polishing pad

12‧‧‧ wafer

13‧‧‧ stage

Claims (16)

A chemical mechanical polishing dresser having a specific cutting ability, comprising: a substrate; a bonding layer disposed on the substrate; and a plurality of abrasive particles embedded in the bonding layer, and the bonding layer is embedded in the bonding layer, and the bonding layer is embedded in the bonding layer The abrasive particles are fixed to the substrate by the bonding layer; wherein the chemical mechanical polishing dresser having a specific cutting ability has a grinding index, and the grinding index is used to determine the chemical machine having the specific cutting ability Grinding performance of the abrasive dresser. A chemical mechanical polishing dresser having a specific cutting ability as described in claim 1, wherein the polishing index is when the polishing pad is polished by the chemical mechanical polishing dresser having a specific cutting ability The amount of wear per unit time. A chemical mechanical polishing dresser having a specific cutting ability as described in claim 2, wherein the chemical mechanical polishing dresser having a specific cutting ability rotates at a speed of 5 rpm to 200 rpm. A chemical mechanical polishing dresser having a specific cutting ability as described in claim 2, wherein the polishing pad has a rotational speed of 5 rpm to 200 rpm. A chemical mechanical polishing dresser having a specific cutting ability as described in claim 2, wherein the chemical mechanical polishing dresser having a specific cutting ability exerts a force of 2 to 150 pounds on the polishing pad. A chemical mechanical polishing dresser having a specific cutting ability as described in claim 2, wherein the polishing time of the chemical mechanical polishing dresser having a specific cutting ability is applied to the polishing pad for 5 minutes to 120 minutes. A chemical mechanical polishing dresser having a specific cutting ability as described in claim 2, wherein the grinding index has three cutting ability levels, including: a high-speed cutting capability level, a medium cutting capacity level, and a low-speed cutting. Ability level. A CMP wearer having a specific cutting ability as described in claim 7 wherein the high speed cutting capability is such that the polishing pad has an attrition rate greater than 500 microns/hour. A CMP wearer having a specific cutting ability as described in claim 7 wherein the medium cutting ability rating is an abrasion rate of the polishing pad of from 150 micrometers per hour to 500 micrometers per hour. A CMP wearer having a specific cutting ability as described in claim 7 wherein the low speed cutting capability is such that the polishing pad has an attrition rate of less than 150 microns per hour. A chemical mechanical polishing dresser having a specific cutting ability as described in claim 1, wherein the abrasive particles are synthetic diamonds, natural diamonds, polycrystalline diamonds, or cubic boron nitride. A chemical mechanical polishing conditioner having a specific cutting ability as described in claim 1, wherein the abrasive particles have a particle diameter of from 30 micrometers to 600 micrometers. A chemical mechanical polishing dresser having a specific cutting ability as described in claim 1, wherein the bonding layer is composed of a ceramic material, a brazing material, a plating material, a metal material, or a polymer material. A chemical mechanical polishing conditioner having a specific cutting ability according to claim 13 , wherein the brazing material is at least one selected from the group consisting of iron, cobalt, nickel, chromium, manganese, cerium, aluminum, and combinations thereof. The group that makes up. A chemical mechanical polishing conditioner having a specific cutting ability as described in claim 13 wherein the polymer material is an epoxy resin, a polyester resin, a polyacrylic resin, or a phenol resin. A chemical mechanical polishing conditioner having a specific cutting ability as described in claim 1, wherein the substrate is a stainless steel substrate.