TWM470395U - Chip antenna structure improvement - Google Patents

Chip antenna structure improvement Download PDF

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Publication number
TWM470395U
TWM470395U TW102211632U TW102211632U TWM470395U TW M470395 U TWM470395 U TW M470395U TW 102211632 U TW102211632 U TW 102211632U TW 102211632 U TW102211632 U TW 102211632U TW M470395 U TWM470395 U TW M470395U
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Taiwan
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carrier
radiator
wafer antenna
top surface
hollow portion
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TW102211632U
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Chinese (zh)
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wei-hong Cai
wen-zhao Liao
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Power Wave Electronic Co Ltd
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Priority to TW102211632U priority Critical patent/TWM470395U/en
Publication of TWM470395U publication Critical patent/TWM470395U/en

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晶片天線結構改良 Wafer antenna structure improvement

本發明係有關一種天線,尤指一種單極化的晶片天線結構改良。 The present invention relates to an antenna, and more particularly to a single-polarized wafer antenna structure improvement.

隨著無線通訊科技的發展,電子產品例如筆記型電腦、行動電話、個人數位助理(PDA)等可攜式電子裝置均朝向輕薄化進行設計開發。用以收發電波訊號的天線尺寸相對縮小,或是改變天線結構型態,方可內置於電子產品內部使用。 With the development of wireless communication technology, portable electronic devices such as notebook computers, mobile phones, and personal digital assistants (PDAs) are designed and developed toward thin and light. The size of the antenna used to transmit and receive radio signals is relatively small, or the antenna structure can be changed to be built into the electronic product.

目前市面上常見的多頻段的多頻天線具有一晶片天線及一基板。該晶片天線係以陶瓷材料製作成一長方形的載體,並於該載體上披覆有至少一可供通訊的輻射金屬部,該晶片天線在與該基板電性連結時,係將該晶片天線的輻射金屬部與基板(印刷電路板)上的微帶線進行電性連結,在該微帶線與銅軸電纜線電性連結後,該輻射金屬部在收到信號後,並將信號經微帶線傳給銅軸電纜線,再由銅軸電纜線傳給電子裝置的主機板進行處理,以達通訊之目的。 A multi-band multi-band antenna commonly used on the market currently has a chip antenna and a substrate. The chip antenna is made of a ceramic material and formed into a rectangular carrier, and the carrier is coated with at least one radiating metal portion for communication. When the chip antenna is electrically connected to the substrate, the wafer antenna is radiated. The metal portion is electrically connected to the microstrip line on the substrate (printed circuit board). After the microstrip line is electrically connected to the copper shaft cable, the radiation metal portion receives the signal and passes the signal through the microstrip. The wire is transmitted to the copper shaft cable, and then the copper shaft cable is transmitted to the motherboard of the electronic device for processing purposes.

由於該晶片天線以陶瓷材料製作後,該晶片天線體積較傳統的天線縮小許多,但是與該晶片天線搭配使用的基板為了與該晶片天線具有一較佳的匹配特性時,該基板的體積較該晶片天線大上數倍,在運用於行動電子裝置上可以降低該裝置的厚度,但是對該裝置的體積無法縮小,因此無法運用在現階段朝輕薄短小設計的 行動電子裝置上。 Since the wafer antenna is made of a ceramic material, the volume of the wafer antenna is much smaller than that of a conventional antenna, but when the substrate used with the wafer antenna has a better matching characteristic with the wafer antenna, the volume of the substrate is larger than that of the wafer antenna. The chip antenna is several times larger, and it can reduce the thickness of the device when it is applied to mobile electronic devices. However, the size of the device cannot be reduced, so it cannot be applied to the current thin and light design. On the mobile electronic device.

因此,本創作之主要目地,在於解決傳統缺失,避免缺失存在,本創作利用玻離纖維材料為晶片天線的載體,可以使本創作的晶片天線體積較傳統晶片天天體積縮小數倍之多,讓搭配使用的基板的體積也可相對縮小數倍之多,讓運用的行動電子裝置的體機可以縮至更小,以符合輕薄短小之目地。 Therefore, the main purpose of this creation is to solve the traditional lack and avoid the existence of the missing. This creation uses the glass fiber material as the carrier of the wafer antenna, which can make the volume of the wafer antenna of this creation shrink several times more than the traditional wafer. The volume of the substrate used in combination can be reduced by several times, so that the mobile electronic device can be reduced to a smaller size to meet the requirements of lightness and shortness.

為達上述之目的,本創作提供一種晶片天線結構改良,包含:一載體,為玻璃纖維材料,其上具有一頂面、一底面及二端面;一輻射體,係由一螺旋狀輻射體及一蜿蜓狀輻射體組成,該螺旋狀輻射體係以貫穿載體設於該載體的頂面及該底面,該蜿蜓狀輻射體設於該載體的頂面與該螺旋狀輻射體電性連結;一電極,係設於該載體的二端面與部份的該頂面及該底面上,並與該螺旋狀輻射體及該蜿蜓狀輻射體電性連結。 In order to achieve the above object, the present invention provides a wafer antenna structure improvement comprising: a carrier, a glass fiber material having a top surface, a bottom surface and two end surfaces; a radiator having a spiral radiator and a spiral-shaped radiation system, the spiral-shaped radiation system is disposed on the top surface of the carrier and the bottom surface through the carrier, and the radial radiator is disposed on the top surface of the carrier and electrically connected to the spiral radiator; An electrode is disposed on the top surface and the bottom surface of the two end faces and portions of the carrier, and is electrically connected to the spiral radiator and the radial radiator.

其中,該載體為單層玻璃纖維材料製成一長條狀或長板狀。 Wherein, the carrier is made of a single layer of glass fiber material and is formed into a long strip shape or a long plate shape.

其中,該載體為多層玻璃纖維材料製成一長條狀或長板狀。 Wherein, the carrier is made of a plurality of layers of glass fiber material in the form of a long strip or a long plate.

其中,該螺旋狀輻射體係由複數金屬線段及複數貫穿該載體1的導電柱組成,該些金屬線段分別設於該載體的頂面及該底面上,該些導電柱貫穿該載體與分別設在該載體的頂面及該底面的該些金屬線段的端部電性連結,以連結成螺旋狀輻射體。 Wherein, the spiral radiation system is composed of a plurality of metal line segments and a plurality of conductive columns penetrating through the carrier 1. The metal wire segments are respectively disposed on a top surface and a bottom surface of the carrier, and the conductive columns are respectively disposed through the carrier and respectively The top surface of the carrier and the ends of the metal line segments of the bottom surface are electrically connected to form a spiral radiator.

其中,該蜿蜓狀輻射體係由複數的金屬線段連接而成並設於該載體的頂面,該蜿蜓狀輻射體的金屬線段與該螺旋狀輻射體的金屬 線段電性連結。 Wherein the braided radiation system is formed by connecting a plurality of metal wire segments and is disposed on a top surface of the carrier, the metal wire segment of the braided radiator and the metal of the spiral radiator The line segments are electrically connected.

其中,該電極係由第一電極及第二電極組成,該第一電極及該第二電極分別設於該載體的二端面與部份的該頂面及該底面上,並與該螺旋狀輻射體及該蜿蜓狀輻射體電性連結。 The electrode is composed of a first electrode and a second electrode, and the first electrode and the second electrode are respectively disposed on the top surface and the bottom surface of the two end faces and portions of the carrier, and the spiral radiation The body and the braided radiator are electrically connected.

其中,更包含一基板,該基板的正面上具有一第一接地金屬層、一信號延伸金屬層及一第一鏤空部,該第一鏤空部的一側延伸有一第二鏤空部,該第一鏤空部及該第二鏤空部上具有一信號饋入線。 The first surface of the substrate has a first grounding metal layer, a signal extending metal layer and a first hollow portion. One side of the first hollow portion has a second hollow portion extending from the first hollow portion. The hollow portion and the second hollow portion have a signal feed line.

其中,以該晶片天線的電極的第一電極及該第二電極電性連結於該信號延伸金屬層及該信號饋入線一端上。 The first electrode and the second electrode of the electrode of the chip antenna are electrically connected to the signal extension metal layer and one end of the signal feed line.

其中,該信號饋入線另一端用以電性連結有一同軸電纜線。 The other end of the signal feeding line is electrically connected to a coaxial cable.

其中,該基板的背面具有一第二接地金屬層及一第三鏤空部,該第三鏤空部對應於該基板正面的第一鏤空部,並以該第三鏤空部形成一淨空區。 The back surface of the substrate has a second grounding metal layer and a third hollow portion. The third hollow portion corresponds to the first hollow portion of the front surface of the substrate, and a clearing portion is formed by the third hollow portion.

其中,更包含有一絕緣層,該絕緣層設於該載體的頂面、底面及該輻射體上。 Wherein, an insulating layer is further disposed on the top surface, the bottom surface of the carrier and the radiator.

其中,該絕緣層為綠漆。 Wherein, the insulating layer is green lacquer.

其中,更包含有一圖案層。 Among them, there is a pattern layer.

其中,該圖案層為公司商標圖案、產品型號、序號。 The pattern layer is a company logo pattern, a product model number, and a serial number.

10‧‧‧晶片天線 10‧‧‧Watt antenna

1‧‧‧載體 1‧‧‧ Carrier

11‧‧‧頂面 11‧‧‧ top surface

12‧‧‧底面 12‧‧‧ bottom

13‧‧‧端面 13‧‧‧ end face

2‧‧‧輻射體 2‧‧‧ radiator

21‧‧‧螺旋狀輻射體 21‧‧‧Spiral radiator

211‧‧‧金屬線段 211‧‧‧Metal segments

212‧‧‧導電柱 212‧‧‧conductive column

22‧‧‧蜿蜓狀輻射體 22‧‧‧Shape radiator

221‧‧‧金屬線段 221‧‧‧Metal segments

3‧‧‧電極 3‧‧‧Electrode

31‧‧‧第一電極 31‧‧‧First electrode

32‧‧‧第二電極 32‧‧‧second electrode

4‧‧‧絕緣層 4‧‧‧Insulation

5‧‧‧圖案層 5‧‧‧pattern layer

20‧‧‧基板 20‧‧‧Substrate

201‧‧‧第一接地金屬層 201‧‧‧First grounded metal layer

202‧‧‧信號延伸金屬層 202‧‧‧Signal extension metal layer

203‧‧‧第一鏤空部 203‧‧‧The first time

204‧‧‧第二鏤空部 204‧‧‧Second Air Force

205‧‧‧信號饋入線 205‧‧‧Signal feed line

206‧‧‧第二接地金屬層 206‧‧‧Second grounded metal layer

207‧‧‧第三鏤空部 207‧‧ Third Third Department

第一圖,係本創作之晶片天線外觀立體示意圖。 The first figure is a stereoscopic view of the appearance of the wafer antenna of the present invention.

第二圖,係本創作之晶片天線另一視角外觀立體示意圖。 The second figure is a perspective view of another perspective view of the wafer antenna of the present invention.

第三圖,係第一圖的3-3位置的斷面剖視示意圖。 The third figure is a schematic cross-sectional view of the 3-3 position of the first figure.

第四圖,係本創作之晶片天線與基板分解示意圖。 The fourth figure is a schematic diagram of the decomposition of the wafer antenna and the substrate of the present invention.

第五圖,係本創作之晶片天線與基板組合示意圖。 The fifth figure is a schematic diagram of the combination of the wafer antenna and the substrate of the present invention.

第六圖,係本創作之晶片天線與基板組合的另一面示意圖。 The sixth figure is a schematic view of the other side of the combination of the wafer antenna and the substrate of the present invention.

第七圖,係本創作之晶片天線電性連結於該基板上所量測的天線反射係數曲線一示意圖。 The seventh figure is a schematic diagram of the antenna reflection coefficient curve measured by electrically connecting the wafer antenna of the present invention to the substrate.

第八圖,係本創作之晶片天線電性連結於該基板上所量測的天線反射係數曲線二示意圖。 The eighth figure is a schematic diagram of the antenna reflection coefficient curve measured by electrically connecting the wafer antenna of the present invention to the substrate.

第九圖,係本創作之晶片天線電性連結於該基板上所量測的天線反射係數曲線三示意圖。 The ninth figure is a three-dimensional diagram of the antenna reflection coefficient curve measured by the chip antenna of the present invention electrically connected to the substrate.

第十圖,係本創作之晶片天線電性連結於該基板上所量測的天線反射係數曲線四示意圖。 The tenth figure is a schematic diagram of the antenna reflection coefficient curve measured by the chip antenna of the present invention electrically connected to the substrate.

第十一圖,係本創作之晶片天線電性連結於該基板上所量測的天線反射係數曲線五示意圖。 The eleventh figure is a schematic diagram of the fifth reflection coefficient curve of the antenna measured by the chip antenna of the present invention electrically connected to the substrate.

茲有關本創作之技術內容及詳細說明,現配合圖式說明如下: The technical content and detailed description of this creation are as follows:

請參閱第一、二、三圖,係本創作之晶片天線外觀立體及另一視角外觀立體與第一圖的3-3位置的斷面剖視示意圖。如圖所示:本創作之晶片天線結構改良,該晶片天線10至少包含:一載體1、一輻射體2、一電極層3、一絕緣層4及一圖案層5。 Please refer to the first, second and third figures, which are schematic cross-sectional views of the appearance of the wafer antenna of the present invention and the appearance of the other perspective and the 3-3 position of the first figure. As shown in the figure, the wafer antenna structure of the present invention is improved. The wafer antenna 10 comprises at least a carrier 1, a radiator 2, an electrode layer 3, an insulating layer 4 and a pattern layer 5.

該載體1,係以單層或多層的玻璃纖維材料製成一長條狀或長板狀,其上具有一頂面11、一底面12及二端面13。 The carrier 1 is formed into a long strip or a long plate shape by a single or multi-layered glass fiber material, and has a top surface 11, a bottom surface 12 and two end surfaces 13 thereon.

該輻射體2,係由一螺旋狀輻射體21及一與該螺旋狀輻射體21電性連結的蜿蜓狀輻射體22組成。該螺旋狀輻射體21係由複數金屬線段211及複數貫穿該載體1的導電柱212組成,該些金屬線段211分別設於該載體1的頂面11及底面12上,該些導電柱212貫穿該載體1與分別設在該載體1的頂面11及底面12的該些金屬線段211的端部電性連結,以連結成螺旋狀輻射體21。該蜿蜓狀輻射體22係由複數的金屬線段221連接而成並設於該載體1的頂面11,該蜿蜓狀輻射體22的金屬線段221與該螺旋狀輻射體21的金屬線段211電性連結。 The radiator 2 is composed of a spiral radiator 21 and a beam radiator 22 electrically connected to the spiral radiator 21. The spiral radiator 21 is composed of a plurality of metal segments 211 and a plurality of conductive pillars 212 extending through the carrier 1. The metal segments 211 are respectively disposed on the top surface 11 and the bottom surface 12 of the carrier 1, and the conductive pillars 212 are penetrated. The carrier 1 is electrically connected to the end portions of the metal wire segments 211 provided on the top surface 11 and the bottom surface 12 of the carrier 1 to be coupled to the spiral radiator 21 . The braid 22 is connected by a plurality of metal segments 221 and is disposed on the top surface 11 of the carrier 1. The metal segment 221 of the braid 22 and the metal segment 211 of the spiral radiator 21 Electrical connection.

該電極3,係由第一電極31及第二電極32組成,該第一電極31及該第二電極32分別設於該載體1的二端面13與部份的該頂面11及該底面12上,並與該螺旋狀輻射體21及該蜿蜓狀輻射體22電性連結,該第一電極31及該第二電極32以供該晶片天線10可以電性連結在該基板(圖中未示)形成單極天線,可運用於行動電子裝置的通訊上。 The electrode 3 is composed of a first electrode 31 and a second electrode 32. The first electrode 31 and the second electrode 32 are respectively disposed on the two end faces 13 of the carrier 1 and a portion of the top surface 11 and the bottom surface 12 of the carrier 1. And electrically connected to the spiral radiator 21 and the radial radiator 22, the first electrode 31 and the second electrode 32 are electrically connected to the substrate of the wafer antenna 10 (not shown) The display of a monopole antenna can be used for communication of mobile electronic devices.

該絕緣層4,係設於該載體1的頂面11、底面12及該輻射體2上,以保護載體1及輻射體2。在本圖式中,該絕緣層4為綠漆。 The insulating layer 4 is disposed on the top surface 11 and the bottom surface 12 of the carrier 1 and the radiator 2 to protect the carrier 1 and the radiator 2. In the figure, the insulating layer 4 is green lacquer.

該圖案層5,係設於該絕緣層4上,該圖案層5為公司商標圖案、產品型號、序號。 The pattern layer 5 is disposed on the insulating layer 4, and the pattern layer 5 is a company logo pattern, a product model number, and a serial number.

請參閱第四、五、六圖,係本創作之晶片天線與基板分解、組合及組合的另一面示意圖。如圖所示:該晶片天線10電性連結在一 個具有淨空區的基板20上做說明。 Please refer to the fourth, fifth and sixth figures, which is another schematic diagram of the decomposition, combination and combination of the wafer antenna and the substrate of the present invention. As shown in the figure: the wafer antenna 10 is electrically connected to a The substrate 20 having the clearance area is described.

該基板20正面上具有一第一接地金屬層201、一信號延伸金屬層202及一第一鏤空部203,該第一鏤空部203的一側延伸有一第二鏤空部204,該第一鏤空部203及該第二鏤空部204上具有一信號饋入線205。該基板20的背面具有一第二接地金屬層206及一第三鏤空部207,該第三鏤空部207對應於該基板20正面的第一鏤空部203,並以該第三鏤空部207形成一淨空區。 The front surface of the substrate 20 has a first grounding metal layer 201, a signal extending metal layer 202 and a first hollow portion 203. One side of the first hollow portion 203 extends with a second hollow portion 204. The first hollow portion The 203 and the second hollow portion 204 have a signal feed line 205 thereon. The back surface of the substrate 20 has a second ground metal layer 206 and a third hollow portion 207. The third hollow portion 207 corresponds to the first hollow portion 203 on the front surface of the substrate 20, and the third hollow portion 207 forms a first hollow portion 207. Clearance area.

在該晶片天線10與該基板20電性連結時,以該晶片天線10的電極3的第一電極31及該第二電極32電性連結於該信號延伸金屬層202及該信號饋入線205一端上,該信號饋入線205另一端用以電性連結有一同軸電纜線(圖中未示),在天線接收信號或發射信號時,由該同軸電纜線傳遞給該信號饋入線205,或由該信號饋入線205將信號傳給該同軸電纜線,以達到信號的收發傳遞。 When the chip antenna 10 is electrically connected to the substrate 20, the first electrode 31 and the second electrode 32 of the electrode 3 of the chip antenna 10 are electrically connected to the signal extension metal layer 202 and the signal feed line 205. The other end of the signal feeding line 205 is electrically connected to a coaxial cable (not shown). When the antenna receives a signal or transmits a signal, the coaxial cable transmits the signal to the signal feeding line 205, or The signal feed line 205 transmits a signal to the coaxial cable to achieve signal transmission and reception.

請參閱第七圖,係本創作之晶片天線電性連結於該基板上所量測的天線反射係數曲線一示意圖。如圖所示: Please refer to the seventh figure, which is a schematic diagram of the antenna reflection coefficient curve measured by the chip antenna electrically connected to the substrate. as the picture shows:

當m1頻率在2.2665GHZ為-6.5988dB。 When the m1 frequency is at 2.2665 GHz, it is -6.5988 dB.

當m2頻率在5.3089GHZ為-8.4880dB。 When the m2 frequency is at 5.3089 GHz, it is -8.4880 dB.

請參閱第八圖,係本創作之晶片天線電性連結於該基板上所量測的天線反射係數曲線二示意圖。如圖所示: Please refer to the eighth figure, which is a schematic diagram of the antenna reflection coefficient curve measured by electrically connecting the wafer antenna of the present invention to the substrate. as the picture shows:

當m1頻率在2.3876GHZ為-6.3776dB。 When the m1 frequency is at 2.3876 GHz, it is -6.3776 dB.

當m2頻率在5.5939GHZ為-8.7311dB。 When the m2 frequency is at 5.5939 GHz, it is -8.7311 dB.

請參閱第九圖,係本創作之晶片天線電性連結於該基板上所量測 的天線反射係數曲線三示意圖。如圖所示: Please refer to the ninth figure, which is measured by electrically connecting the wafer antenna of the present invention to the substrate. The schematic diagram of the antenna reflection coefficient curve is three. as the picture shows:

當m1頻率在2.5016GHZ為-6.4142dB。 When the m1 frequency is at 2.5016 GHZ, it is -6.4142 dB.

當m2頻率在5.6224GHZ為-9.2754dB。 When the m2 frequency is -9.2754dB at 5.6224GHZ.

請參閱第十圖,係本創作之晶片天線電性連結於該基板上所量測的天線反射係數曲線四示意圖。如圖所示: Please refer to the tenth figure, which is a schematic diagram of the antenna reflection coefficient curve measured by the chip antenna of the present invention being electrically connected to the substrate. as the picture shows:

當m1頻率在2.6370GHZ為-6.5900dB。 When the m1 frequency is 2.6370 GHz, it is -6.5900 dB.

當m2頻率在5.9786GHZ為-10.9856dB。 When the m2 frequency is at -5.986 GHz, it is -10.9856 dB.

請參閱第十一圖,係本創作之晶片天線電性連結於該基板上所量測的天線反射係數曲線五示意圖。如圖所示: Please refer to the eleventh figure, which is a schematic diagram of the reflection coefficient curve of the antenna measured by the chip antenna of the present invention electrically connected to the substrate. as the picture shows:

當m1頻率在2.7937GHZ為-6.7283dB。 When the m1 frequency is 6.7937 GHz, it is -6.7283 dB.

當m2頻率在6.0000GHZ為-9.2765dB。 When the m2 frequency is at 6.0000 GHz, it is -9.2765 dB.

上述僅為本創作之較佳實施例而已,並非用來限定本創作實施之範圍。即凡依本創作申請專利範圍所做的均等變化與修飾,皆為本創作專利範圍所涵蓋。 The above is only the preferred embodiment of the present invention and is not intended to limit the scope of the present invention. That is, the equal changes and modifications made by the patent application scope of this creation are covered by the scope of the creation patent.

10‧‧‧晶片天線 10‧‧‧Watt antenna

1‧‧‧載體 1‧‧‧ Carrier

11‧‧‧頂面 11‧‧‧ top surface

12‧‧‧底面 12‧‧‧ bottom

13‧‧‧端面 13‧‧‧ end face

2‧‧‧輻射體 2‧‧‧ radiator

21‧‧‧螺旋狀輻射體 21‧‧‧Spiral radiator

211‧‧‧金屬線段 211‧‧‧Metal segments

212‧‧‧導電柱 212‧‧‧conductive column

22‧‧‧蜿蜓狀輻射體 22‧‧‧Shape radiator

221‧‧‧金屬線段 221‧‧‧Metal segments

3‧‧‧電極 3‧‧‧Electrode

31‧‧‧第一電極 31‧‧‧First electrode

32‧‧‧第二電極 32‧‧‧second electrode

4‧‧‧絕緣層 4‧‧‧Insulation

5‧‧‧圖案層 5‧‧‧pattern layer

Claims (14)

一種晶片天線結構改良,包含:一載體,為玻璃纖維材料,其上具有一頂面、一底面及二端面;一輻射體,係由一螺旋狀輻射體及一蜿蜓狀輻射體組成,該螺旋狀輻射體係以貫穿載體設於該載體的頂面及該底面,該蜿蜓狀輻射體設於該載體的頂面與該螺旋狀輻射體電性連結;一電極,係設於該載體的二端面與部份的該頂面及該底面上,並與該螺旋狀輻射體及該蜿蜓狀輻射體電性連結。 A wafer antenna structure improvement comprising: a carrier, a glass fiber material having a top surface, a bottom surface and two end surfaces; a radiator comprising a spiral radiator and a beam radiator The spiral radiation system is disposed on the top surface and the bottom surface of the carrier through the carrier, and the radial radiator is disposed on the top surface of the carrier and electrically connected to the spiral radiator; an electrode is disposed on the carrier The top surface and the top surface of the second end surface and the portion are electrically connected to the spiral radiator and the radial radiator. 如申請專利範圍第1項所述之晶片天線結構改良,其中,該載體為單層玻璃纖維材料製成一長條狀或長板狀。 The wafer antenna structure according to claim 1, wherein the carrier is made of a single layer of glass fiber material in the form of a strip or a long plate. 如申請專利範圍第2項所述之晶片天線結構改良,其中,該載體為多層玻璃纖維材料製成一長條狀或長板狀。 The wafer antenna structure as described in claim 2, wherein the carrier is made of a plurality of layers of glass fiber material in the form of a strip or a long plate. 如申請專利範圍第3項所述之晶片天線結構改良,其中,該螺旋狀輻射體係由複數金屬線段及複數貫穿該載體的導電柱組成,該些金屬線段分別設於該載體的頂面及該底面上,該些導電柱貫穿該載體與分別設在該載體的頂面及該底面的該些金屬線段的端部電性連結,以連結成螺旋狀輻射體。 The improved structure of the wafer antenna according to claim 3, wherein the spiral radiation system is composed of a plurality of metal line segments and a plurality of conductive columns penetrating the carrier, wherein the metal wire segments are respectively disposed on a top surface of the carrier and the On the bottom surface, the conductive pillars are electrically connected to the ends of the metal line segments respectively disposed on the top surface and the bottom surface of the carrier to be connected to form a spiral radiator. 如申請專利範圍第4項所述之晶片天線結構改良,其中,該蜿蜓狀輻射體係由複數的金屬線段連接而成並設於該載體的頂面,該蜿蜓狀輻射體的金屬線段與該螺旋狀輻射體的金屬線段電性連結。 The improved structure of the wafer antenna according to claim 4, wherein the braided radiation system is formed by connecting a plurality of metal segments and is disposed on a top surface of the carrier, and the metal segments of the braided radiator The metal wire segments of the spiral radiator are electrically connected. 如申請專利範圍第5項所述之晶片天線結構改良,其中,該電極 係由第一電極及第二電極組成,該第一電極及該第二電極分別設於該載體的二端面與部份的該頂面及該底面上,並與該螺旋狀輻射體及該蜿蜓狀輻射體電性連結。 The wafer antenna structure improvement according to claim 5, wherein the electrode The first electrode and the second electrode are respectively disposed on the top surface and the bottom surface of the two end faces and portions of the carrier, and the spiral radiator and the cymbal The braided radiator is electrically connected. 如申請專利範圍第6項所述之晶片天線結構改良,其中,更包含一基板,該基板的正面上具有一第一接地金屬層、一信號延伸金屬層及一第一鏤空部,該第一鏤空部的一側延伸有一第二鏤空部,該第一鏤空部及該第二鏤空部上具有一信號饋入線。 The improved structure of the wafer antenna according to the sixth aspect of the invention, further comprising a substrate having a first ground metal layer, a signal extension metal layer and a first hollow portion on the front surface of the substrate, the first A second hollow portion extends from one side of the hollow portion, and the first hollow portion and the second hollow portion have a signal feeding line thereon. 如申請專利範圍第7項所述之晶片天線結構改良,其中,以該晶片天線的電極的第一電極及該第二電極電性連結於該信號延伸金屬層及該信號饋入線一端上。 The improved structure of the wafer antenna according to claim 7, wherein the first electrode and the second electrode of the electrode of the wafer antenna are electrically connected to the signal extension metal layer and one end of the signal feed line. 如申請專利範圍第8項所述之晶片天線結構改良,其中,該信號饋入線另一端用以電性連結有一同軸電纜線。 The improved structure of the wafer antenna according to claim 8 is characterized in that the other end of the signal feeding line is electrically connected to a coaxial cable. 如申請專利範圍第9項所述之晶片天線結構改良,其中,該基板的背面具有一第二接地金屬層及一第三鏤空部,該第三鏤空部對應於該基板正面的第一鏤空部,並以該第三鏤空部形成一淨空區。 The improved structure of the wafer antenna according to claim 9, wherein the back surface of the substrate has a second ground metal layer and a third hollow portion, and the third hollow portion corresponds to the first hollow portion of the front surface of the substrate. And forming a clearance area with the third hollow portion. 如申請專利範圍第10項所述之晶片天線結構改良,其中,更包含有一絕緣層,該絕緣層設於該載體的頂面、底面及該輻射體上。 The wafer antenna structure improvement according to claim 10, further comprising an insulating layer disposed on the top surface, the bottom surface of the carrier and the radiator. 如申請專利範圍第11項所述之晶片天線結構改良,其中,該絕緣層為綠漆。 The wafer antenna structure improvement according to claim 11, wherein the insulating layer is green lacquer. 如申請專利範圍第12項所述之晶片天線結構改良,其中,更包含有一圖案層。 The wafer antenna structure improvement according to claim 12, further comprising a pattern layer. 如申請專利範圍第13項所述之晶片天線結構改良,其中,該圖案層為公司商標圖案、產品型號、序號。 The improved structure of the wafer antenna according to claim 13 is characterized in that the pattern layer is a company logo pattern, a product model number, and a serial number.
TW102211632U 2013-06-21 2013-06-21 Chip antenna structure improvement TWM470395U (en)

Priority Applications (1)

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