TWM467878U - Interconnection structure and probe card structure using the same - Google Patents
Interconnection structure and probe card structure using the same Download PDFInfo
- Publication number
- TWM467878U TWM467878U TW102211615U TW102211615U TWM467878U TW M467878 U TWM467878 U TW M467878U TW 102211615 U TW102211615 U TW 102211615U TW 102211615 U TW102211615 U TW 102211615U TW M467878 U TWM467878 U TW M467878U
- Authority
- TW
- Taiwan
- Prior art keywords
- contact arm
- contact
- interconnect
- interconnecting
- contact arms
- Prior art date
Links
Landscapes
- Measuring Leads Or Probes (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
本創作係提供一種互連結構及應用其之探針卡結構,尤指一種透過模組化互連結構,俾達成極佳之機械與電器性能者。The present invention provides an interconnect structure and a probe card structure for use thereof, and more particularly, a modular interconnect structure for achieving excellent mechanical and electrical performance.
按,一般半導體晶片與積體電路於製造過程,為了測試各晶圓的積體電路之特性及參數,將連接至測試設備(Devices under test,DUTs),令每一晶片在切割前,需要利用電互連器個別進行測試,其主要係確保積體電路之功能是否可正常運作,此測試過程應考量到晶片設計及密度,顯見所述電互連器必須隨著科技發展而與時俱進。According to the general semiconductor chip and integrated circuit in the manufacturing process, in order to test the characteristics and parameters of the integrated circuit of each wafer, it will be connected to the devices under test (DUTs), so that each wafer needs to be used before cutting. The electrical interconnects are tested individually, mainly to ensure that the function of the integrated circuit is working properly. This test process should consider the chip design and density. It is obvious that the electrical interconnect must keep pace with the development of technology. .
近年來,更是隨著積體電路技術之快速成長,使得半導體積體電路之尺寸漸趨縮小,以求取單位晶圓面積容量提升,並增進操作速度,相對之下,應用於至少二電子組件之電互連器同樣欲達到更小的節距(pitch),進而發展出空間相對緊密之接觸墊,再者,探針陣列之空間或節距必須對應接觸墊或凸塊之電連接需求漸增,同時對於共面性(planarity)之需求亦漸增。In recent years, with the rapid growth of integrated circuit technology, the size of the semiconductor integrated circuit has been gradually reduced to obtain an increase in the unit area of the wafer and to increase the operating speed. In contrast, it is applied to at least two electrons. The electrical interconnects of the components also desire to achieve a smaller pitch, thereby developing a relatively tightly spaced contact pad. Furthermore, the space or pitch of the probe array must correspond to the electrical connection requirements of the contact pads or bumps. Increasingly, there is also an increasing demand for planarity.
惟,經查習用電子組件之電互連器,如所述節距過小則會影響操作速度、可靠度及良率,是以其或許可分別解決前述些許缺失,但仍未有單一電互連器能完全符合需求,換言之,製程技術最迫切需要改善的是,應用於半導體封裝上每一電接觸點之測試設備,藉以提供所需之機械性能,例如彈簧 力、順應性,以及去除於接觸墊或凸塊表面的膜之擦刮動作。However, if the electrical interconnects of the electronic components are inspected, if the pitch is too small, the operation speed, reliability and yield will be affected, and the above-mentioned slight defects may be solved by the license, but there is still no single electrical interconnection. The device is fully compliant with the requirements. In other words, the most urgent need for process technology to improve is the test equipment used at each electrical contact point on the semiconductor package to provide the required mechanical properties, such as springs. Force, compliance, and wiping action of the film removed from the surface of the contact pad or bump.
有鑑於此,本創作人特地針對習用電子組件之電互連器加以研究及改良,期以一較佳創作改善上述問題,並在經過長期研發及不斷測試後,始有本創作之問世。In view of this, the author has specially researched and improved the electrical interconnects of the conventional electronic components, and has improved the above problems with a better creation, and after a long period of research and development and continuous testing, the creation of this creation has begun.
緣是,本創作之目的係為解決先前技術之限制,吾等創作人提供一種互連結構及應用其之探針卡結構,於連接至測試設備時,以對應空間或節距密集之接觸墊或凸塊,並確實達到良好的彈簧力、順應性及擦刮動作之機械性能。The reason is that the purpose of this creation is to solve the limitations of the prior art. Our creators provide an interconnect structure and a probe card structure using the same, and when connected to the test equipment, the contact pads are dense with corresponding space or pitch. Or bumps, and indeed achieve good spring force, compliance and mechanical properties of the wiping action.
為達致以上目的,吾等創作人提供一種互連結構,其係包含有:至少一互連元件,所述互連元件係具有一間隔件及複數第一接觸臂,該間隔件係包含有至少一薄片層、複數黏著層及複數非導電層,所述薄片層係位於所述黏著層之間,且所述黏著層係位於所述非導電層之間;該等第一接觸臂係同向延伸自該間隔件。To achieve the above objects, our creators provide an interconnect structure comprising: at least one interconnecting member having a spacer and a plurality of first contact arms, the spacer comprising At least one sheet layer, a plurality of adhesive layers and a plurality of non-conductive layers, the sheet layer being located between the adhesive layers, and the adhesive layer is located between the non-conductive layers; the first contact arms are The extension extends from the spacer.
據上所述之互連結構,其中,所述薄片層係包含一導電層,且該等第一接觸臂係一體成型自該導電層,於該等第一接觸臂表面係電鍍有金屬材料。The interconnect structure according to the above, wherein the sheet layer comprises a conductive layer, and the first contact arms are integrally formed from the conductive layer, and the surface of the first contact arms is plated with a metal material.
據上所述之互連結構,其中,該導電層材料係選自鈹銅合金、磷青銅、彈簧鋼或鎳鈦合金組成之群組。According to the interconnect structure described above, the conductive layer material is selected from the group consisting of beryllium copper alloy, phosphor bronze, spring steel or nickel titanium alloy.
據上所述之互連結構,其中,該金屬材料係選自鎳、金、鈀、銠或鉑組成之群組。According to the interconnect structure described above, the metal material is selected from the group consisting of nickel, gold, palladium, rhodium or platinum.
據上所述之互連結構,其中,該等第一接觸臂係朝該間隔件反向 延伸複數第二接觸臂。According to the interconnect structure described above, wherein the first contact arms are reversed toward the spacer Extending the plurality of second contact arms.
據上所述之互連結構,其中,該等第一接觸臂係分別形成自一連結段,所述連結段係呈間隔排列設置者。According to the interconnection structure described above, the first contact arms are respectively formed from a joint segment, and the joint segments are arranged at intervals.
據上所述之互連結構,其中,該其二相鄰的第一接觸臂係形成自一結合段,所述結合段係呈間隔排列設置者。According to the interconnect structure described above, the two adjacent first contact arms are formed from a bonding section, and the bonding sections are arranged in a spaced arrangement.
據上所述之互連結構,其中,該其二相鄰的第一接觸臂係形成自一結合段,而另一第一接觸臂則係形成自一連結段,所述結合段及連結段係呈間隔排列設置者。According to the interconnection structure described above, the two adjacent first contact arms are formed from one joint segment, and the other first contact arm is formed from a joint segment, the joint segment and the joint segment They are arranged in intervals.
據上所述之互連結構,其中,所述第一接觸臂及第二接觸臂係分別成型有至少一彎曲部,並於所述第一接觸臂及第二接觸臂頂端成型有一突出部。According to the above-mentioned interconnection structure, the first contact arm and the second contact arm are respectively formed with at least one bent portion, and a protrusion is formed at the top ends of the first contact arm and the second contact arm.
據上所述之互連結構,其中,該等第一接觸臂之間係與該等第二接觸臂之間具有相異節距。According to the interconnect structure described above, the first contact arms are spaced apart from the second contact arms by a different pitch.
據上所述之互連結構,其中,該等第一接觸臂係與第二接觸臂相互對應,並呈間隔排列。According to the interconnect structure described above, the first contact arm and the second contact arm correspond to each other and are arranged at intervals.
據上所述之互連結構,其中,該等第一接觸臂與第二接觸臂係分別兩兩相對,並呈間隔排列。According to the interconnect structure described above, the first contact arm and the second contact arm are respectively opposite to each other and arranged at intervals.
據上所述之互連結構,其中,所述第一接觸臂及第二接觸臂係位於不同平面。According to the interconnect structure described above, the first contact arm and the second contact arm are located in different planes.
據上所述之互連結構,其中,所述互連元件為複數,該等互連元件係相互堆疊並形成一互連模組。According to the interconnect structure described above, wherein the interconnection elements are plural, the interconnection elements are stacked on each other and form an interconnection module.
為達致以上目的,吾等創作人另提供一種互連結構,其係包含 有:至少一互連元件,所述互連元件係具有至少二間隔件及複數第三接觸臂,該等間隔件係相互對應並平行,所述間隔件係包含有至少一薄片層、複數黏著層及複數非導電層,所述薄片層係位於所述黏著層之間,且所述黏著層係位於所述非導電層之間;該等第三接觸臂係連貫該等間隔件。In order to achieve the above objectives, our creators also provide an interconnection structure, which There is: at least one interconnecting component, the interconnecting component having at least two spacers and a plurality of third contact arms, the spacers being corresponding to each other and parallel, the spacers comprising at least one foil layer, a plurality of adhesive layers And a plurality of non-conductive layers, the sheet layer being located between the adhesive layers, and the adhesive layer is located between the non-conductive layers; the third contact arms are continuous with the spacers.
據上所述之互連結構,其中,所述薄片層係包含一導電層,該等第三接觸臂係一體成型自該導電層,於該等第三接觸臂表面係電鍍有金屬材料。According to the interconnection structure described above, the sheet layer comprises a conductive layer, and the third contact arms are integrally formed from the conductive layer, and the surface of the third contact arms is plated with a metal material.
據上所述之互連結構,其中,該等第三接觸臂受到彎折,使得該等間隔件位於不同平面。According to the interconnect structure described above, the third contact arms are bent such that the spacers are in different planes.
據上所述之互連結構,其中,該等第三接觸臂係分別形成自一連結段,所述連結段係呈間隔排列設置者。According to the interconnect structure described above, the third contact arms are respectively formed from a connecting segment, and the connecting segments are arranged in a spaced arrangement.
據上所述之互連結構,其中,該其二相鄰的第三接觸臂係形成自一結合段,所述結合段係呈間隔排列設置者。According to the interconnect structure described above, the two adjacent third contact arms are formed from a bonding section, and the bonding sections are arranged in a spaced arrangement.
據上所述之互連結構,其中,該其二相鄰的第三接觸臂係形成自一結合段,而另一第三接觸臂則係形成自一連結段,所述結合段及連結段係呈間隔排列設置者。According to the interconnect structure described above, the two adjacent third contact arms are formed from one joint segment, and the other third contact arm is formed from a joint segment, the joint segment and the joint segment They are arranged in intervals.
據上所述之互連結構,其中,所述第三接觸臂係成型有至少一彎曲部,並於所述第三接觸臂兩端成型有一突出部。According to the interconnection structure described above, the third contact arm is formed with at least one bent portion, and a protrusion is formed at both ends of the third contact arm.
據上所述之互連結構,其中,所述互連元件為複數,該等互連元件係相互堆疊並形成一互連模組。According to the interconnect structure described above, wherein the interconnection elements are plural, the interconnection elements are stacked on each other and form an interconnection module.
為達致以上目的,吾等創作人係提供一種探針卡結構,其係包含有:一探針晶片,其係具有一基體及一設置於該基體之互連模組,該互連模組係包含複數互連元件,所述互連元件係具有至少二間隔件及複數第三接觸臂,該等間隔件係相互對應並平行,所述間隔件係包含有至少一薄片層、複數黏著層及複數非導電層,所述薄片層係位於所述黏著層之間,且所述黏著層係位於所述非導電層之間;該等第三接觸臂係連貫該等間隔件,又,該其一互連元件係利用該等第三接觸臂之一端係耦接一待測元件,且該等第三接觸臂之另端係耦接一電路板。In order to achieve the above object, our creator provides a probe card structure comprising: a probe chip having a base body and an interconnect module disposed on the base body, the interconnect module The system includes a plurality of interconnecting elements having at least two spacers and a plurality of third contact arms, the spacers being corresponding to each other and parallel, the spacers comprising at least one sheet layer, a plurality of adhesive layers And a plurality of non-conductive layers, the sheet layer is located between the adhesive layers, and the adhesive layer is located between the non-conductive layers; the third contact arms are continuous with the spacers, and An interconnecting component is coupled to a device to be tested by one end of the third contact arm, and the other end of the third contact arm is coupled to a circuit board.
據上所述之探針卡結構,其中,所述薄片層係包含一導電層,該等第三接觸臂係一體成型自該導電層,於該等第三接觸臂表面係電鍍有金屬材料。According to the probe card structure described above, the sheet layer comprises a conductive layer, and the third contact arms are integrally formed from the conductive layer, and the surface of the third contact arms is plated with a metal material.
據上所述之探針卡結構,其中,該等第三接觸臂受到彎折,使得該等間隔件位於不同平面。According to the probe card structure described above, the third contact arms are bent such that the spacers are located in different planes.
據上所述之探針卡結構,其中,該待測元件係設有複數第一耦接點,且該電路板係設有複數第二耦接點,藉以定義該其一互連元件係位於一第一平面,並定義垂直該第一平面者為一第二平面,而該等第三接觸臂連結至所述第一耦接點與第二耦接點係於該第二平面具有相異節距。According to the probe card structure described above, the device to be tested is provided with a plurality of first coupling points, and the circuit board is provided with a plurality of second coupling points, thereby defining that an interconnection component is located a first plane, and defining the first plane is a second plane, and the third contact arm is coupled to the first coupling point and the second coupling point is different from the second plane Pitch.
為達致以上目的,吾等創作人另提供一種探針卡結構,其係包含有:一探針晶片,其係具有一基體及一設置於該基體之第一互連模組,該第一互連模組係包含至少一第一互連元件,所述第一互連元件係具有一間隔件及複數第一接觸臂,該等第一接觸臂係同向延伸自該間隔件;以及一中介件,其係具有一框體及一設置於該框體之第二互連模組,該第二互連模組係包含至少一第二互連元件,所述第二互連元件係具有一間隔件及複數第一接觸臂,該等第一接觸臂係同向延伸自該間隔件,並朝該間隔件反向延伸複數第二接觸臂;藉之,該第一互連模組之第一接觸臂係耦接一待測元件,且其間隔件係組設一間隔變壓器,該間隔變壓器於組設該第一互連模組之相反側係耦接該第二互連模組之第一接觸臂,且該第二互連模組係利用其第二接觸臂耦接一電路板。In order to achieve the above object, the creator further provides a probe card structure, comprising: a probe chip having a base body and a first interconnecting module disposed on the base body, the first The interconnect module includes at least one first interconnecting component, the first interconnecting component having a spacer and a plurality of first contact arms extending from the spacer in the same direction; and a The interposer has a frame and a second interconnect module disposed on the frame, the second interconnect module includes at least one second interconnecting component, and the second interconnecting component has a spacer member and a plurality of first contact arms extending in the same direction from the spacer and extending oppositely to the spacer a plurality of second contact arms; thereby, the first interconnecting module The first contact arm is coupled to the device to be tested, and the spacer is configured with a spacer transformer. The spacer transformer is coupled to the second interconnect module on the opposite side of the first interconnect module. The first contact arm, and the second interconnect module is coupled to a circuit board by using the second contact arm thereof.
據上所述之探針卡結構,其中,所述第一互連元件與第二互連元件之間隔件係分別包含有至少一薄片層、複數黏著層及複數非導電層,所述薄片層係位於所述黏著層之間,且所述黏著層係位於所述非導電層之間。The probe card structure according to the above, wherein the spacers of the first interconnecting member and the second interconnecting member respectively comprise at least one thin layer, a plurality of adhesive layers and a plurality of non-conductive layers, the thin layer Located between the adhesive layers, and the adhesive layer is between the non-conductive layers.
據上所述之探針卡結構,其中,所述薄片層係包含一導電層,該等第一接觸臂與第二接觸臂係一體成型自該導電層,於該等第一接觸臂與第二接觸臂表面係電鍍有金屬材料。According to the probe card structure described above, the sheet layer comprises a conductive layer, and the first contact arm and the second contact arm are integrally formed from the conductive layer, and the first contact arm and the first contact arm The surface of the two contact arms is plated with a metallic material.
據上所述之探針卡結構,其中,該第二互連模組之第一接觸臂係與第二接觸臂相互對應,並呈間隔排列。According to the probe card structure described above, the first contact arm of the second interconnect module and the second contact arm correspond to each other and are arranged at intervals.
藉由上述設置,與先前技術相較之下,本創作主要係能依照使用者需求,進行模組化互連結構,其中,該薄片層、該黏著層及該非導電層皆為平面構造,並根據需求決定重複堆疊該薄片層、該黏著層及該非導電層之層數,意即該等互連元件為可變尺寸而形成互連模組,此互連模組能進一步形成三維立體結構者,並應用在探針卡結構,其可根據使用需求配置或未配置該間隔變壓器,以連結至待測元件進行電性測試,再者,該間隔件係能防止該等第一接觸臂、第二接觸臂或第三接觸臂於受力時過度彎曲而損壞,本創作亦能適用安裝於一電子組件,俾具有良好的機械與電器性能,例如彈簧力、順應性,以及去除於接觸墊或凸塊表面的膜之擦刮動作,同時可大幅減低節距等優點及功效。With the above arrangement, compared with the prior art, the present invention mainly implements a modular interconnection structure according to user requirements, wherein the sheet layer, the adhesive layer and the non-conductive layer are both planar structures, and Resetting the number of layers of the sheet layer, the adhesive layer and the non-conductive layer repeatedly according to requirements, that is, the interconnecting elements are variable in size to form an interconnect module, and the interconnect module can further form a three-dimensional structure And applied to the probe card structure, which can be configured or not configured according to the use requirement, to be connected to the device to be tested for electrical testing, and further, the spacer can prevent the first contact arm, the first The second contact arm or the third contact arm is excessively bent and damaged when subjected to force. The present invention can also be applied to an electronic component, which has good mechanical and electrical properties, such as spring force, compliance, and removal from the contact pad or The wiping action of the film on the surface of the bump can greatly reduce the advantages and effects of the pitch.
本創作係一種互連結構及應用其之探針卡結構,其實施手段、特點及其功效,茲舉數種較佳可行實施例並配合圖式於下文進行詳細說明,俾供鈞上深入瞭解並認同本創作。The present invention is an interconnect structure and a probe card structure using the same, and its implementation means, features and functions, and several preferred embodiments are described in detail below with reference to the drawings. And agree with this creation.
首先,請參閱第1圖至第13圖所示,本創作主要係一種互連結構,特先闡明本創作的製造方法之步驟係包括:於一導電層1形成至少一圖案化區域2,該等圖案化區域2係呈陣列式排列,且所述圖案化區域2係具有至少一匯流部21及一接觸結構22,該接觸結構22係包含分別成型於該匯流部21兩側之第一接觸臂221及第二接觸臂222,所述第一接觸臂221及第二接觸臂222係分別成型有至少一彎曲部2211、2221,並於所述第一接觸臂221及第二接觸臂222頂端成型有一突出部2212、2222,又,該導電層1材料係選自鈹銅合金、磷青銅、彈簧鋼或鎳鈦合金組成之群組;於該導電層1對應設置一遮罩層3,該遮罩層3係對應該匯流部21而具有遮蔽區域31,其對應該接觸結構22則係具有非遮蔽區域32,且於該接觸結構22表面電鍍金屬材料,即該第一接觸臂221及第二接觸臂222表面係電鍍金屬材料,該金屬材料係選自鎳、金、鈀、銠或鉑組成之群組,其電鍍係茲舉鎳/金組成、鎳/金/鈀/金組成、鎳/金/銠組成、鎳/金/鉑組成或其他組成為例,藉以形成一薄片層4;於一非導電層5形成至少一第一開口51,所述第一開口51係對應所述圖案化區域2而製成者,又,該非導電層5材料係選自玻璃布基有環氧樹脂(FR4)、聚醯亞胺(Polyimide)或陶瓷(Ceramic)組成之群組;於一黏著層6形成至少一第二開口61,所述第二開口61係對應所述圖案化區域2而製成者,且所述第二開口61係使用一製程選自一車床加工製程;First, referring to FIG. 1 to FIG. 13 , the present invention is mainly an interconnect structure. The steps of the manufacturing method of the present invention are as follows: forming at least one patterned region 2 on a conductive layer 1 , The patterned regions 2 are arranged in an array, and the patterned regions 2 have at least one confluence portion 21 and a contact structure 22, and the contact structure 22 includes first contacts respectively formed on both sides of the confluence portion 21. The first contact arm 221 and the second contact arm 222 are respectively formed with at least one bent portion 2211, 2221, and at the top of the first contact arm 221 and the second contact arm 222. Forming a protrusion portion 2212, 2222, wherein the material of the conductive layer 1 is selected from the group consisting of beryllium copper alloy, phosphor bronze, spring steel or nickel titanium alloy; a conductive layer 1 is correspondingly disposed with a mask layer 3, The mask layer 3 has a shielding area 31 corresponding to the confluence portion 21, and the corresponding contact structure 22 has a non-shielding area 32, and the surface of the contact structure 22 is plated with a metal material, that is, the first contact arm 221 and the The surface of the two contact arms 222 is plated with a metal material, The metal material is selected from the group consisting of nickel, gold, palladium, rhodium or platinum, and the electroplating system is composed of nickel/gold composition, nickel/gold/palladium/gold composition, nickel/gold/ruthenium composition, nickel/gold/platinum. The composition or other composition is taken as an example to form a thin layer 4; at least one first opening 51 is formed in a non-conductive layer 5, and the first opening 51 is made corresponding to the patterned region 2, and The material of the conductive layer 5 is selected from the group consisting of epoxy resin (FR4), polyimide or ceramic; and at least one second opening 61 is formed in an adhesive layer 6. The second opening 61 is made corresponding to the patterned region 2, and the second opening 61 is selected from a lathe processing process using a process;
依序堆疊並利用兩相對應之加壓板7,進行層壓該薄片層4、該黏著層6及該非導電層5;以及Laminating the sheet layer 4, the adhesive layer 6 and the non-conductive layer 5 by sequentially stacking and using two corresponding pressing plates 7;
根據所述第一開口51及第二開口61而單一化該接觸結構22,其係根據所述遮蔽區域31完全移除該匯流部21,而形成至少一連結段23,概如第7圖所示般,所述單一化該接觸結構22係使用一製程選自一蝕刻製程、一衝壓製程、一雷射製程或一鑽削製程,並經由車床加工磨除後,形成至少一互連元件8,該等互連元件8應同樣係呈陣列式排列,為清楚表現所述互連元件8之結構僅繪製其一,特予敘明,又,於此步驟中若係根據所述遮蔽區域31部分移除該匯流部21,而形成至少一連結段24及至少一結合段25,概如第9圖所示,該其二相鄰的第一接觸臂221係形成自一結合段25,而另一第一接觸臂221則係形成自一連結段24,所述結合段25及連結段24係呈間隔排列設置者,顯見該等連結段24與結合段25係能依照使用需求而進行配置。The contact structure 22 is singulated according to the first opening 51 and the second opening 61, and the confluence portion 21 is completely removed according to the shielding area 31 to form at least one connecting section 23, as shown in FIG. Generally, the singulation of the contact structure 22 is performed by using a process selected from an etching process, a stamping process, a laser process, or a drilling process, and after grinding through a lathe process, forming at least one interconnecting component 8 The interconnecting elements 8 should be arranged in an array as well. For the sake of clearly showing the structure of the interconnecting elements 8, only one of them is shown. It is specifically described, and in this step, according to the shielding area 31. Partially removing the confluence portion 21 to form at least one joint segment 24 and at least one joint segment 25, as shown in FIG. 9, the two adjacent first contact arms 221 are formed from a joint portion 25, and The other first contact arm 221 is formed from a connecting portion 24, and the connecting portion 25 and the connecting portion 24 are arranged at intervals. It is obvious that the connecting portion 24 and the connecting portion 25 can be configured according to the use requirements. .
請再次參閱第10圖所示,根據前述製造方法,本創作之一實施例係提供一種互連結構,其係包含有:Referring again to FIG. 10, according to the foregoing manufacturing method, an embodiment of the present invention provides an interconnection structure including:
至少一互連元件8a,所述互連元件8a係具有一間隔件81a、複數第一接觸臂82a及複數第二接觸臂83a,該間隔件81a係包含有至少一薄片層811a、複數黏著層812a及複數非導電層813a,所述薄片層811a係位於所述黏著層812a之間,且所述薄片層811a係包含有導電層,該導電層材料係選自鈹銅合金、磷青銅、彈簧鋼或鎳鈦合金組成之群組,且該等第一接觸臂82a係一體成型自該導電層,於該等第一接觸臂82a表面係電鍍有金屬材料,該金屬材料係選自鎳、金、鈀、銠或鉑組成之群組,所述黏著層812a係位於所述非導電層813a之間;該等第一接觸臂82a係同向延伸自該間隔件81a;該等第二接觸臂83a係朝該間隔件81a反向延伸者,又,該等第一接觸臂82a係與第二接觸臂83a相互對應,並呈間隔排列,所述第一接觸臂82a及第二接觸臂83a係分別成型有至少一彎曲部821a、831a,並於所述第一接觸臂82a及第二接觸臂83a頂端成型有一突出部822a、832a。At least one interconnecting member 8a having a spacer 81a, a plurality of first contact arms 82a and a plurality of second contact arms 83a, the spacer 81a comprising at least one foil layer 811a, a plurality of adhesive layers 812a and a plurality of non-conductive layers 813a, the sheet layer 811a is located between the adhesive layers 812a, and the sheet layer 811a comprises a conductive layer selected from the group consisting of beryllium copper alloy, phosphor bronze, and spring. a group of steel or nickel-titanium alloys, and the first contact arms 82a are integrally formed from the conductive layer, and the surface of the first contact arms 82a is plated with a metal material selected from the group consisting of nickel and gold. a group of palladium, rhodium or platinum, the adhesive layer 812a being located between the non-conductive layers 813a; the first contact arms 82a extending in the same direction from the spacer 81a; the second contact arms 83a is oppositely extended toward the spacer 81a. Further, the first contact arms 82a and the second contact arms 83a correspond to each other and are arranged at intervals. The first contact arm 82a and the second contact arm 83a are Forming at least one curved portion 821a, 831a, respectively, and at the first Contact tip 83a and the arm 82a forming the second contact arm has a projection 822a, 832a.
接著,請再次參閱第11圖所示,同樣係根據前述製造方法,本創作之另一實施例提供一種互連結構,其係包含有至少一互連元件8b,所述互連元件8b係具有一間隔件81b、複數第一接觸臂82b及複數第二接觸臂83b,該間隔件81b係包含有至少一薄片層811b、複數黏著層812b及複數非導電層813b,所述第一接觸臂82b及第二接觸臂83b係分別成型有至少一彎曲部821b、831b,並於所述第一接觸臂82b及第二接觸臂83b頂端成型有一突出部822b、832b,其差異處主要係在於:Next, please refer to FIG. 11 again, again according to the foregoing manufacturing method, another embodiment of the present invention provides an interconnection structure including at least one interconnection element 8b having the interconnection element 8b a spacer 81b, a plurality of first contact arms 82b and a plurality of second contact arms 83b, the spacer 81b includes at least one thin layer 811b, a plurality of adhesive layers 812b and a plurality of non-conductive layers 813b, the first contact arms 82b And the second contact arm 83b is respectively formed with at least one curved portion 821b, 831b, and a protruding portion 822b, 832b is formed at the top end of the first contact arm 82b and the second contact arm 83b, the difference mainly being:
該等第一接觸臂82b與第二接觸臂83b係分別兩兩相對,並呈間隔排列;The first contact arm 82b and the second contact arm 83b are respectively opposite to each other and arranged at intervals;
於實際應用時,請見第12A圖至第12C圖,無論係該第一接觸臂82a、82b或第二接觸臂83a、83b,所述彎曲部841c、841d、841e及突出部842c、842d、842e係可為相異態樣,該等第一接觸臂82a、82b之間係與該等第二接觸臂83a、83b之間具有相異節距,並可分別位於不同平面,以形成三維立體結構,就製造方法之步驟而言,其係透過彎折該薄片層811a、811b,使得所述第一接觸臂82a、82b及第二接觸臂83a、83b位於不同平面。In practical applications, please refer to FIGS. 12A to 12C, regardless of the first contact arms 82a, 82b or the second contact arms 83a, 83b, the curved portions 841c, 841d, 841e and the protruding portions 842c, 842d, The 842e may be in a different state, and the first contact arms 82a, 82b and the second contact arms 83a, 83b have different pitches and may be respectively located on different planes to form a three-dimensional The structure, in terms of the steps of the manufacturing method, is such that the first contact arms 82a, 82b and the second contact arms 83a, 83b are located on different planes by bending the sheet layers 811a, 811b.
續上而論,請參閱第13圖及第14圖所示,本創作係一種互連結構之製造方法,其步驟更進一步包括:To be continued, please refer to Figures 13 and 14, which are a method of manufacturing an interconnect structure, the steps of which further include:
重複堆疊複數該薄片層811b、該黏著層812b及該非導電層813b並形成一互連模組9,即所述互連元件8b為複數,圖所繪示者係以具有兩相對應的第一接觸臂82b與第二接觸臂83b之互連元件8b為例,該等互連元件8b係相互堆疊並形成該互連模組9;Repeatingly stacking the plurality of thin layer 811b, the adhesive layer 812b and the non-conductive layer 813b and forming an interconnection module 9, that is, the interconnection element 8b is plural, and the figure is drawn to have two corresponding first The contact arm 82b and the second contact arm 83b of the interconnection element 8b as an example, the interconnection elements 8b are stacked on each other and form the interconnection module 9;
於該互連模組9定義一選定區域91,根據該選定區域91切割並製成一探針晶片或一中介件。A selected area 91 is defined in the interconnect module 9, and a probe wafer or an interposer is cut and formed according to the selected area 91.
關於本創作之應用概可提供兩種態樣,第一種態樣請參閱第15圖所示,本創作之一實施例係提供一種探針卡結構,其係包含有:There are two aspects to the application of this creation. The first aspect is shown in Fig. 15. One embodiment of the present invention provides a probe card structure, which includes:
一探針晶片10,其係具有一基體101及一設置於該基體101之第一互連模組,該第一互連模組係包含至少一第一互連元件102,所述第一互連元件102係具有一間隔件1021及複數第一接觸臂1022,該等第一接觸臂1022係同向延伸自該間隔件1021;以及a probe wafer 10 having a base body 101 and a first interconnect module disposed on the base body 101, the first interconnect module including at least one first interconnecting component 102, the first mutual The connecting member 102 has a spacer 1021 and a plurality of first contact arms 1022 extending from the spacer 1021 in the same direction;
一中介件20,其係具有一框體201及一設置於該框體201之第二互連模組,該第二互連模組係包含至少一第二互連元件202,所述第二互連元件202係具有一間隔件2021及複數第一接觸臂2022,該等第一接觸臂2022係同向延伸自該間隔件2021,並朝該間隔件2021反向延伸複數第二接觸臂2023;An interposer 20 having a frame 201 and a second interconnect module disposed on the frame 201, the second interconnect module including at least one second interconnecting component 202, the second The interconnecting component 202 has a spacer 2021 and a plurality of first contact arms 2022. The first contact arms 2022 extend in the same direction from the spacer 2021 and extend in the opposite direction to the spacer 2021. ;
藉之,該第一互連模組之第一接觸臂1022係耦接一待測元件30,且其間隔件1021係組設一間隔變壓器40,該間隔變壓器40於組設該第一互連模組之相反側係耦接該第二互連模組之第一接觸臂2022,且該第二互連模組係利用其第二接觸臂2023耦接一電路板50。The first contact arm 1022 of the first interconnect module is coupled to a device under test 30, and the spacer 1021 is provided with a spacer transformer 40. The spacer transformer 40 is configured to form the first interconnect. The opposite side of the module is coupled to the first contact arm 2022 of the second interconnect module, and the second interconnect module is coupled to a circuit board 50 by the second contact arm 2023.
接著,第二種態樣請參閱第16圖所示,本創作之另一實施例係提供一種探針卡結構,其係包含有:Next, in the second aspect, please refer to FIG. 16. Another embodiment of the present invention provides a probe card structure, which comprises:
一探針晶片60,其係具有一基體601及一設置於該基體601之互連模組,該互連模組係包含複數互連元件602,所述互連元件602係具有至少二間隔件6021及複數第三接觸臂6022,該等間隔件6021係相互對應並平行;該等第三接觸臂6022係連貫該等間隔件6021,又,該其一互連元件602係利用該等第三接觸臂6022之一端係耦接一待測元件70,該待測元件70係設有複數第一耦接點701,且該等第三接觸臂6022之另端係耦接一電路板80,該電路板80係設有複數第二耦接點801;A probe wafer 60 having a base 601 and an interconnect module disposed on the base 601, the interconnect module including a plurality of interconnecting elements 602 having at least two spacers 6021 and a plurality of third contact arms 6022, the spacers 6021 are corresponding to each other and parallel; the third contact arms 6022 are continuous with the spacers 6021, and an interconnecting component 602 is utilized by the third component One end of the contact arm 6022 is coupled to a device to be tested 70. The device to be tested 70 is provided with a plurality of first coupling points 701, and the other ends of the third contact arms 6022 are coupled to a circuit board 80. The circuit board 80 is provided with a plurality of second coupling points 801;
藉以定義該其一互連元件602係位於一第一平面,並定義垂直該第一平面者為一第二平面,而該等第三接觸臂6022連結至所述第一耦接點701與第二耦接點801係於該第二平面具有相異節距。By way of example, the interconnecting component 602 is located in a first plane, and the first plane is defined as a second plane, and the third contact arm 6022 is coupled to the first coupling point 701 and the first The two coupling points 801 have different pitches in the second plane.
據上所述顯見第一種態樣係配置有間隔變壓器40,而第二種態樣則未配置該間隔變壓器40,先以第一種態樣而言,定義X方向及Y方向,該第一互連元件102之第一接觸臂1022間於X方向係具有一第一節距P1 ,則於Y方向係具有一第二節距P2 ,該第二互連元件202之第二接觸臂2023間於X方向係具有一第三節距P3 ,則於Y方向係具有一第四節距P4 ,因而該第二互連元件202係透過該間隔變壓器40,使變化該第三節距P3 為該第一節距P1 ,且第一種態樣共具有四個耦接點;針對第二種態樣而言,同樣係定義X方向及Y方向,連結至該第一耦接點701之第三接觸臂6022間於X方向係具有一第五節距P5 ,則連結至該第二耦接點801之第三接觸臂6022間於X方向係具有一第六節距P6 ,於Y方向係具有一第七節距P7 ,因而係透過該第三接觸臂6022直接變化該第六節距P6 為第五節距P5 ,意即完全無須似第一種態樣設置該間隔變壓器40,且第二種態樣僅具有第一耦接點701與第二耦接點801共二個耦接點。According to the above description, the first aspect is configured with a spacer transformer 40, and in the second aspect, the spacer transformer 40 is not disposed. First, in the first aspect, the X direction and the Y direction are defined. The first contact arm 1022 of an interconnecting component 102 has a first pitch P 1 in the X direction, a second pitch P 2 in the Y direction, and a second contact of the second interconnecting component 202 . The arm 2023 has a third pitch P 3 in the X direction, and has a fourth pitch P 4 in the Y direction. Therefore, the second interconnecting member 202 passes through the spacer transformer 40 to change the third. The pitch P 3 is the first pitch P 1 , and the first aspect has a total of four coupling points; for the second aspect, the X direction and the Y direction are also defined, and the first is connected to the first The third contact arm 6022 of the coupling point 701 has a fifth pitch P 5 in the X direction, and the third contact arm 6022 connected to the second coupling point 801 has a sixth section in the X direction. The distance P 6 has a seventh pitch P 7 in the Y direction, so that the sixth pitch P 6 is directly changed by the third contact arm 6022 to be the fifth pitch P 5 , which means The spacer transformer 40 is not required to be disposed in the first mode, and the second embodiment has only two coupling points of the first coupling point 701 and the second coupling point 801.
請參閱第17圖所示,本創作之又一實施例係提供一種互連結構,其係包含有:Referring to FIG. 17, another embodiment of the present invention provides an interconnection structure including:
至少一互連元件602a,所述互連元件602a係具有至少二間隔件6021a及複數第三接觸臂6022a,該等間隔件6021a係相互對應並平行;該等第三接觸臂6022a係連貫該等間隔件6021a;At least one interconnecting member 602a having at least two spacers 6021a and a plurality of third contact arms 6022a, the spacers 6021a being corresponding to each other and parallel; the third contact arms 6022a being consecutively connected Spacer 6021a;
藉之,所述互連元件602a亦能利用該等第三接觸臂6022a之一端耦接一待測元件70a,且該等第三接觸臂6022a之另端係耦接一電路板80a。The interconnecting component 602a can also be coupled to a device to be tested 70a by one end of the third contact arm 6022a, and the other end of the third contact arm 6022a is coupled to a circuit board 80a.
在此,本創作人需特別說明的是,該等第三接觸臂6022a於製造方法,其步驟係於形成所述圖案化區域之步驟,更包含:該等匯流部為兩相對應且平行之匯流部,且該接觸結構係包含連貫於該等匯流部之第三接觸臂6022a;以及彎折該薄片層,使得該等匯流部位於不同平面,續請參閱第18圖所示,該等第三接觸臂6022a受到彎折,使得該等間隔件6021a位於不同平面,以形成三維立體結構,俾可變化該等第三接觸臂6022a在相異平面之節距,綜言之,該等第三接觸臂6022a不僅可於X方向形成相異節距,亦可形成三維立體結構而於Y方向形成相異節距。Here, the creator needs to specify that the third contact arm 6022a is in the manufacturing method, and the step is the step of forming the patterned region, and further includes: the confluent portions are two corresponding and parallel a confluence portion, wherein the contact structure includes a third contact arm 6022a that is continuous with the confluence portions; and the sheet layer is bent such that the confluence portions are located on different planes, as shown in FIG. 18, The three contact arms 6022a are bent such that the spacers 6021a are located on different planes to form a three-dimensional structure, and the pitch of the third contact arms 6022a at different planes can be changed. In summary, the third The contact arm 6022a can form not only a different pitch in the X direction but also a three-dimensional structure and a different pitch in the Y direction.
最後,請參閱第19圖所示,本創作之互連結構更進一步利用該互連元件8b係耦接至一電子組件100,所述電子組件100係適用安裝於電池或電力傳輸器,藉以達到較佳之電連接效果.;請參閱第20圖所示,相異互連元件係分別形成相異形狀之接觸結構並相互插接,其符號為22a至22g,以及23a至23g,此可視為公插與母插,而第21A圖至第21F圖係用以顯現其相互插接並具有相異態樣。Finally, referring to FIG. 19, the interconnect structure of the present invention is further coupled to the electronic component 100 by using the interconnecting component 8b, and the electronic component 100 is suitable for being mounted on a battery or a power transmitter. Preferably, the electrical connection effect;; as shown in Fig. 20, the different interconnecting elements respectively form contact structures of different shapes and are mutually plugged, the symbols are 22a to 22g, and 23a to 23g, which can be regarded as public Inserted into the female insert, and the 21A to 21F are used to visualize the mutual insertion and have different appearances.
綜觀上述,本創作所揭露之技術手段不僅為前所未見,且確可達致預期之目的與功效,故兼具新穎性與進步性,誠屬專利法所稱之新型無誤,以其整體結構而言,確已符合專利法之法定要件,爰依法提出新型專利申請。Looking at the above, the technical means exposed in this creation is not only unprecedented, but also achieves the intended purpose and effect, so it is both novel and progressive. It is a new type of patent law that is called the whole. In terms of structure, it has indeed met the statutory requirements of the Patent Law and has filed a new type of patent application in accordance with the law.
惟以上所述者,僅為本創作之較佳實施例,當不能以此作為限定本創作之實施範圍,即大凡依本創作申請專利範圍及說明書內容所作之等效變化與修飾,皆應仍屬於本創作專利涵蓋之範圍內。However, the above descriptions are only preferred embodiments of the present invention, and should not be used as a limitation to the scope of implementation of the creation, that is, the equivalent changes and modifications made by the applicant in accordance with the scope of the patent application and the contents of the specification should still be Belonging to the scope covered by this creation patent.
〔本創作〕[this creation]
(1)‧‧‧導電層
(2)‧‧‧圖案化區域
(21)‧‧‧匯流部
(22)‧‧‧接觸結構
(23、24)‧‧‧連結段
(25)‧‧‧結合段
(221)‧‧‧第一接觸臂
(222)‧‧‧第二接觸臂
(2211、2221)‧‧‧彎曲部
(2212、2222)‧‧‧突出部
(3)‧‧‧遮罩層
(31)‧‧‧遮蔽區域
(32)‧‧‧非遮蔽區域
(4)‧‧‧薄片層
(5)‧‧‧非導電層
(51)‧‧‧第一開口
(6)‧‧‧黏著層
(61)‧‧‧第二開口
(7)‧‧‧加壓板
(8、8a)‧‧‧互連元件
(81a)‧‧‧間隔件
(811a)‧‧‧薄片層
(812a)‧‧‧黏著層
(813a)‧‧‧非導電層
(82a)‧‧‧第一接觸臂
(83a)‧‧‧第二接觸臂
(821a、831a)‧‧‧彎曲部
(822a、832a)‧‧‧突出部
(8b)‧‧‧互連元件
(81b)‧‧‧間隔件
(811b)‧‧‧薄片層
(812b)‧‧‧黏著層
(813b)‧‧‧非導電層
(82b)‧‧‧第一接觸臂
(83b)‧‧‧第二接觸臂
(821b、831b)‧‧‧彎曲部
(822b、832b)‧‧‧突出部
(841c、841d、841e)‧‧‧彎曲部
(842c、842d、842e)‧‧‧突出部
(9)‧‧‧互連模組
(91)‧‧‧選定區域
(10)‧‧‧探針晶片
(101)‧‧‧基體
(102)‧‧‧第一互連元件
(1021)‧‧‧間隔件
(1022)‧‧‧第一接觸臂
(20)‧‧‧中介件
(201)‧‧‧框體
(202)‧‧‧第二互連元件
(2021)‧‧‧間隔件
(2022)‧‧‧第一接觸臂
(2023)‧‧‧第二接觸臂
(30)‧‧‧待測元件
(40)‧‧‧間隔變壓器
(50)‧‧‧電路板
(60)‧‧‧探針晶片
(601)‧‧‧基體
(602)‧‧‧互連元件
(6021)‧‧‧間隔件
(6022)‧‧‧第三接觸臂
(70)‧‧‧待測元件
(701)‧‧‧第一耦接點
(80)‧‧‧電路板
(801)‧‧‧第二耦接點
(602a)‧‧‧互連元件
(6021a)‧‧‧間隔件
(6022a)‧‧‧第三接觸臂
(70a)‧‧‧待測元件
(80a)‧‧‧電路板
(100)‧‧‧電子組件
(22a、22b、22c、22d、22e、22f、22g)‧‧‧接觸結構
(23a、23b、23c、23d、23e、23f、23g)‧‧‧接觸結構(1) ‧‧‧ Conductive layer
(2) ‧‧‧patterned areas
(21) ‧ ‧ Confluence Department
(22) ‧‧‧Contact structure
(23, 24) ‧ ‧ link segment
(25) ‧ ‧ joint section
(221)‧‧‧First contact arm
(222)‧‧‧Second contact arm
(2211, 2221) ‧ ‧ bending
(2212, 2222) ‧ ‧ protruding parts
(3) ‧ ‧ mask layer
(31)‧‧‧Shaded area
(32) ‧‧‧Unshielded areas
(4) ‧ ‧ sheet layer
(5) ‧ ‧ non-conductive layer
(51) ‧ ‧ first opening
(6) ‧ ‧ adhesive layer
(61) ‧ ‧ second opening
(7) ‧‧‧Pressure plate
(8, 8a) ‧‧‧Interconnect components
(81a) ‧‧‧ spacers
(811a)‧‧‧Sheet
(812a) ‧‧‧Adhesive layer
(813a)‧‧‧ Non-conductive layer
(82a)‧‧‧First contact arm
(83a) ‧‧‧second contact arm
(821a, 831a) ‧ ‧ bending
(822a, 832a) ‧ ‧ protruding parts
(8b)‧‧‧Interconnect components
(81b) ‧‧‧ spacers
(811b)‧‧‧Sheet
(812b)‧‧‧Adhesive layer
(813b)‧‧‧ Non-conductive layer
(82b)‧‧‧First contact arm
(83b)‧‧‧second contact arm
(821b, 831b) ‧ ‧ bending
(822b, 832b) ‧ ‧ highlights
(841c, 841d, 841e) ‧ ‧ bending
(842c, 842d, 842e) ‧ ‧ s
(9)‧‧‧Interconnect modules
(91)‧‧‧ Selected areas
(10)‧‧‧ probe wafer
(101) ‧ ‧ base
(102)‧‧‧First interconnected components
(1021) ‧‧‧ spacers
(1022)‧‧‧First contact arm
(20) ‧‧‧Intermediary
(201)‧‧‧Box
(202)‧‧‧Second interconnected components
(2021) ‧‧‧ spacers
(2022)‧‧‧First contact arm
(2023) ‧‧‧second contact arm
(30) ‧‧‧ components to be tested
(40) ‧‧‧Interval transformer
(50)‧‧‧ boards
(60)‧‧‧ probe wafer
(601) ‧ ‧ base
(602)‧‧‧Interconnect components
(6021) ‧‧‧ spacers
(6022) ‧‧ Third contact arm
(70) ‧‧‧ components to be tested
(701)‧‧‧First coupling point
(80)‧‧‧ boards
(801)‧‧‧Second coupling point
(602a)‧‧‧Interconnect components
(6021a) ‧‧‧ spacers
(6022a) ‧‧‧ third contact arm
(70a) ‧‧‧ components to be tested
(80a)‧‧‧ boards
(100)‧‧‧Electronic components
(22a, 22b, 22c, 22d, 22e, 22f, 22g) ‧ ‧ contact structure
(23a, 23b, 23c, 23d, 23e, 23f, 23g) ‧ ‧ contact structure
[第1圖]係本創作之製造方法之導電層形成示意圖。[Fig. 1] is a schematic view showing the formation of a conductive layer in the manufacturing method of the present invention.
[第2圖]係本創作之製造方法之薄片層、黏著層及非導電層之堆疊示意圖。[Fig. 2] A stacking diagram of a sheet layer, an adhesive layer, and a non-conductive layer in the manufacturing method of the present invention.
[第3圖]係本創作之製造方法之薄片層之局部結構放大示意圖。[Fig. 3] is an enlarged schematic view showing a partial structure of a sheet layer of the manufacturing method of the present invention.
[第4圖]係本創作之製造方法中經由加壓板之疊層示意圖。[Fig. 4] is a schematic view showing the lamination of a pressure plate in the manufacturing method of the present invention.
[第5圖]係本創作之製造方法之單一化接觸結構之形成示意圖。[Fig. 5] is a schematic view showing the formation of a singular contact structure of the manufacturing method of the present invention.
[第6圖]係於第5圖之局部結構放大示意圖。[Fig. 6] is an enlarged schematic view showing a partial structure of Fig. 5.
[第7圖]係本創作之製造方法之形成連結段之示意圖。[Fig. 7] is a schematic diagram showing the formation of a joining section of the manufacturing method of the present invention.
[第8圖]係本創作之製造方法之互連元件之一結構示意圖。[Fig. 8] is a schematic structural view of one of the interconnection elements of the manufacturing method of the present invention.
[第9圖]係本創作之製造方法之互連元件之另一結構示意圖。[Fig. 9] is another schematic structural view of an interconnection element of the manufacturing method of the present invention.
[第10圖]係本創作之一實施例之立體外觀示意圖。[Fig. 10] is a perspective view of a stereoscopic appearance of an embodiment of the present invention.
[第11圖]係本創作之另一實施例之立體外觀示意圖。[Fig. 11] is a perspective view showing a stereoscopic appearance of another embodiment of the present creation.
[第12A圖至第12C圖]係本創作之接觸結構具有相異態樣示意圖。[Fig. 12A to Fig. 12C] The contact structure of the present invention has a schematic diagram of a different state.
[第13圖]係本創作之製造方法之互連模組之形成示意圖。[Fig. 13] is a schematic diagram showing the formation of an interconnection module of the manufacturing method of the present invention.
[第14圖]係本創作製成探針晶片或中介件示意圖。[Fig. 14] is a schematic view of a probe wafer or an interposer made by the present invention.
[第15圖]係本創作之一實施例之探針卡結構示意圖。[Fig. 15] is a schematic view showing the structure of a probe card of an embodiment of the present invention.
[第16圖]係本創作之另一實施例之探針卡結構示意圖。[Fig. 16] Fig. 16 is a schematic view showing the structure of a probe card of another embodiment of the present invention.
[第17圖]係本創作之又一實施例之探針卡結構示意圖。[Fig. 17] Fig. 17 is a schematic view showing the structure of a probe card of still another embodiment of the present invention.
[第18圖]係本創作於第17圖進一步形成三維結構示意圖。[Fig. 18] This is a schematic diagram of the three-dimensional structure further formed in Fig. 17.
[第19圖]係根據本創作另一實施例耦接至電子組件之示意圖。[Fig. 19] is a schematic diagram of coupling to an electronic component according to another embodiment of the present creation.
[第20圖]係本創作之互連元件相互插接示意圖。[Fig. 20] is a schematic diagram of the interconnection of the interconnection elements of the present invention.
[第21A至21F圖]係本創作之互連元件相互插接並具有相異態樣示意圖。[21A to 21F] The interconnection elements of the present invention are interposed and have different patterns.
(8a)‧‧‧互連元件(8a)‧‧‧Interconnect components
(81a)‧‧‧間隔件(81a) ‧‧‧ spacers
(811a)‧‧‧薄片層(811a)‧‧‧Sheet
(812a)‧‧‧黏著層(812a) ‧‧‧Adhesive layer
(813a)‧‧‧非導電層(813a)‧‧‧ Non-conductive layer
(82a)‧‧‧第一接觸臂(82a)‧‧‧First contact arm
(83a)‧‧‧第二接觸臂(83a) ‧‧‧second contact arm
(821a、831a)‧‧‧彎曲部(821a, 831a) ‧ ‧ bending
(822a、832a)‧‧‧突出部(822a, 832a) ‧ ‧ protruding parts
Claims (30)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW102211615U TWM467878U (en) | 2013-06-21 | 2013-06-21 | Interconnection structure and probe card structure using the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW102211615U TWM467878U (en) | 2013-06-21 | 2013-06-21 | Interconnection structure and probe card structure using the same |
Publications (1)
Publication Number | Publication Date |
---|---|
TWM467878U true TWM467878U (en) | 2013-12-11 |
Family
ID=50155526
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW102211615U TWM467878U (en) | 2013-06-21 | 2013-06-21 | Interconnection structure and probe card structure using the same |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWM467878U (en) |
-
2013
- 2013-06-21 TW TW102211615U patent/TWM467878U/en not_active IP Right Cessation
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7628617B2 (en) | Structure and process for a contact grid array formed in a circuitized substrate | |
CN101128091B (en) | Component-embedded multilayer printed wiring board and manufacturing method thereof | |
CN102646913B (en) | Making method for electric connector | |
KR101278713B1 (en) | Probe card and method of manufacture | |
JP5500870B2 (en) | Substrate with connection terminal and socket for electronic parts | |
JP5788166B2 (en) | Connection terminal structure, manufacturing method thereof, and socket | |
US7217139B2 (en) | Interconnect assembly for a probe card | |
CN102854343B (en) | For test structure and the method for testing of semiconductor devices | |
US8963013B2 (en) | Three dimensional interposer device | |
KR101517409B1 (en) | Semiconductor test socket and manufacturing method thereof | |
CN105304584B (en) | Interposer substrate and method of manufacturing the same | |
US20100167561A1 (en) | Structure and process for a contact grid array formed in a circuitized substrate | |
US20130029500A1 (en) | Connector and fabrication method thereof | |
TW201640973A (en) | Method for manufacturing electrical interconnection structure | |
KR100908810B1 (en) | Method for manufacturing micro tips and needles and vertical probes for probe cards | |
TWI519794B (en) | Interconnect structure, manufacturing method and application thereof | |
KR101556216B1 (en) | Semiconductor test socket and manufacturing method thereof | |
KR20080110037A (en) | Vertical probe assembly for probe card and method for fabricating the same | |
TWM467878U (en) | Interconnection structure and probe card structure using the same | |
JP2000340277A (en) | Interconnector and its manufacture | |
JP5794833B2 (en) | Connection terminal, manufacturing method thereof, and socket | |
JP4090950B2 (en) | IC module for compound IC card | |
JP2009147080A5 (en) | ||
JP2002257898A (en) | Structure of probe for inspecting semiconductor device and method of making the same | |
US9253880B2 (en) | Printed circuit board including a plurality of circuit layers and method for manufacturing the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4K | Annulment or lapse of a utility model due to non-payment of fees |