TWI519794B - Interconnect structure, manufacturing method and application thereof - Google Patents

Description

Interconnect structure, its manufacturing method and its application

The present invention provides an interconnect structure, a method of fabricating the same, and an application thereof, and more particularly to a device that achieves excellent mechanical and electrical performance through a modular interconnect structure.

According to the general semiconductor chip and integrated circuit in the manufacturing process, in order to test the characteristics and parameters of the integrated circuit of each wafer, it will be connected to the devices under test (DUTs), so that each wafer needs to be used before cutting. The electrical interconnects are tested individually, mainly to ensure that the function of the integrated circuit is working properly. This test process should consider the chip design and density. It is obvious that the electrical interconnect must keep pace with the development of technology. .

In recent years, with the rapid growth of integrated circuit technology, the size of the semiconductor integrated circuit has been gradually reduced to obtain an increase in the unit area of the wafer and to increase the operating speed. In contrast, it is applied to at least two electrons. The electrical interconnects of the components also desire to achieve a smaller pitch, thereby developing a relatively tightly spaced contact pad. Furthermore, the space or pitch of the probe array must correspond to the electrical connection requirements of the contact pads or bumps. Increasingly, there is also an increasing demand for planarity.

However, if the electrical interconnects of the electronic components are inspected, if the pitch is too small, the operation speed, reliability and yield will be affected, and the above-mentioned slight defects may be solved by the license, but there is still no single electrical interconnection. The device is fully compliant with the requirements. In other words, the most urgent need for process technology to improve is the test equipment used at each electrical contact point on the semiconductor package to provide the required mechanical properties, such as spring force, compliance, and removal from contact. Film scratching on the surface of the pad or bump action.

In view of this, our inventors are concentrating on further research on the electrical interconnects of conventional electronic components, and proceeding with research and development and improvement, with a better creation to solve the above problems, and after continuous trial and modification, The invention came out.

Accordingly, it is an object of the present invention to address the limitations of the prior art. The inventors provide an interconnect structure, a method of fabricating the same, and an application thereof, when connected to a test device, with a corresponding space or pitch-intensive contact pad or The bumps do indeed achieve good spring force, compliance and mechanical properties of the wiping action.

In order to achieve the above object, the inventors provide a method for fabricating an interconnect structure, the steps comprising: forming at least one patterned region in a conductive layer, the patterned region having at least one junction and a contact a mask layer is disposed on the conductive layer, and a metal material is plated on the surface of the contact structure to form a thin layer; at least one first opening is formed in a non-conductive layer, wherein the first opening corresponds to the Forming a region; forming an at least one second opening in an adhesive layer, the second opening being formed corresponding to the patterned region; sequentially stacking and laminating the foil layer, the adhesive layer, and The non-conductive layer; and singulating the contact structure according to the first opening and the second opening, and forming at least one interconnection element.

According to the manufacturing method of the interconnect structure described above, the step of forming the thin layer further comprises: the mask layer having a shielding portion corresponding to the confluent portion, and the corresponding contact structure having a non-shielding region.

According to the manufacturing method of the interconnect structure, the step of forming the thin layer further includes: the contact structure includes a first contact arm and a second contact arm respectively formed on both sides of the confluence portion, and is bent The sheet layer is such that the first contact arm and the second contact arm are located in different planes.

According to the manufacturing method of the interconnect structure described above, the step of forming the patterned region further includes: the confluent portions are two corresponding and parallel confluence portions, and the contact structure comprises coherent to the confluences The third contact arm of the department.

According to the manufacturing method of the interconnection structure described above, the step of forming the sheet layer further comprises: bending the sheet layer such that the confluence portions are located on different planes.

The method of fabricating an interconnect structure as described above, wherein singulating the contact structure uses a process selected from an etching process, a stamping process, a laser process, or a drilling process.

According to the manufacturing method of the interconnect structure described above, the step of singulating the contact structure further includes: completely removing the bus bar according to the shielding region to form at least one connecting segment.

According to the manufacturing method of the interconnect structure, the step of singulating the contact structure further includes: removing the confluence portion according to the shielding region portion to form at least one connecting segment and at least one bonding segment.

According to the manufacturing method of the interconnect structure described above, the method further includes the steps of: repeatedly stacking the plurality of thin layers, the adhesive layer and the non-conductive layer and forming an interconnect module.

According to the manufacturing method of the interconnect structure described above, the method further includes the step of defining a selected area in the interconnect module, and cutting and fabricating a probe wafer according to the selected area.

According to the manufacturing method of the interconnect structure described above, the method further includes the step of defining a selected area in the interconnect module, and cutting and forming an interposer according to the selected area.

According to the manufacturing method of the interconnect structure described above, the conductive layer material is selected from the group consisting of beryllium copper alloy, phosphor bronze, spring steel or nickel titanium alloy.

The method of fabricating an interconnect structure according to the above, wherein the metal material is selected from the group consisting of nickel, gold, palladium, rhodium or platinum.

According to the manufacturing method of the interconnect structure described above, wherein the non-conductive layer material It is selected from the group consisting of glass cloth based epoxy resin (FR4), polyimide (Polyimide) or ceramic (Ceramic).

According to the manufacturing method of the interconnect structure described above, the contact structure includes first and second contact arms respectively formed on both sides of the confluent portion.

According to the manufacturing method of the interconnect structure, the first contact arm and the second contact arm are respectively formed with at least one bent portion, and are formed at the top ends of the first contact arm and the second contact arm. Highlights.

According to the manufacturing method of the interconnection structure described above, the first contact arm and the second contact arm system respectively have different spring rates.

The method of fabricating an interconnect structure as described above, wherein the first contact arms have different spring rates.

According to the manufacturing method of the interconnect structure described above, wherein the second contact arms have different spring rates

According to the manufacturing method of the interconnect structure described above, wherein the first contact arms have a first pitch and the second contact arms have a second pitch

According to the manufacturing method of the interconnect structure described above, the first contact arm and the second contact arm correspond to each other and are arranged at intervals.

According to the manufacturing method of the interconnect structure described above, the first contact arm and the second contact arm are respectively opposite to each other and arranged at intervals.

In order to achieve the above object, the inventors further provide an interconnection structure comprising: at least one interconnection element having a spacer and a plurality of first contact arms, the spacer comprising Having at least one foil layer, a plurality of adhesive layers and a plurality of non-conductive layers, the foil layers being located between the adhesive layers, and the adhesive layer is located between the non-conductive layers; the first contact arm systems The same direction extends from the spacer.

In order to achieve the above object, the inventors further provide an interconnection structure comprising: at least one interconnection element having at least two spacers and a plurality of third contact arms, the spacers Corresponding and parallel to each other, the spacer comprises at least one sheet layer, a plurality of adhesive layers and a plurality of non-conductive layers, the sheet layer is located between the adhesive layers, and the adhesive layer is located at the non- Between the conductive layers; the third contact arms are continuous with the spacers.

In order to achieve the above object, the inventors provide a probe card structure comprising: a probe chip having a substrate and an interconnection module disposed on the substrate, the interconnection module The system includes a plurality of interconnecting elements having at least two spacers and a plurality of third contact arms, the spacers being corresponding to each other and parallel, the spacers comprising at least one sheet layer, a plurality of adhesive layers And a plurality of non-conductive layers, the sheet layer is located between the adhesive layers, and the adhesive layer is located between the non-conductive layers; the third contact arms are continuous with the spacers, and An interconnecting component is coupled to a device to be tested by one end of the third contact arm, and the other end of the third contact arm is coupled to a circuit board.

In order to achieve the above object, the inventors further provide a probe card structure, comprising: a probe chip having a base body and a first interconnecting module disposed on the base body, the first The interconnect module includes at least one first interconnecting component, the first interconnecting component having a spacer and a plurality of first contact arms extending from the spacer in the same direction; and a The interposer has a frame and a second interconnect module disposed on the frame, the second interconnect module includes at least one second interconnecting component, and the second interconnecting component has a spacer member and a plurality of first contact arms extending in the same direction from the spacer and extending oppositely to the spacer a plurality of second contact arms; thereby, the first interconnecting module The first contact arm is coupled to the device to be tested, and the spacer is configured with a spacer transformer. The spacer transformer is coupled to the second interconnect module on the opposite side of the first interconnect module. The first contact arm, and the second interconnect module is coupled to a circuit board by using the second contact arm thereof.

With the above arrangement, the present invention is mainly capable of performing a modular interconnection structure according to user requirements, wherein the sheet layer, the adhesive layer and the non-conductive layer are planar structures, and Resetting the number of layers of the sheet layer, the adhesive layer and the non-conductive layer repeatedly according to requirements, that is, the interconnecting elements are variable in size to form an interconnect module, and the interconnect module can further form a three-dimensional structure And applied to the probe card structure, which can be configured or not configured according to the use requirement, to be connected to the device to be tested for electrical testing, and further, the spacer can prevent the first contact arm, the first The second contact arm or the third contact arm is excessively bent and damaged when subjected to force. The present invention can also be applied to an electronic component, which has good mechanical and electrical properties, such as spring force, compliance, and removal from contact pads or The wiping action of the film on the surface of the bump can greatly reduce the advantages and effects of the pitch.

〔this invention〕

1‧‧‧ Conductive layer

2‧‧‧ patterned area

21‧‧ ‧ Confluence Department

22‧‧‧Contact structure

23, 24‧‧‧ link segment

25‧‧‧Combined section

221‧‧‧First contact arm

222‧‧‧second contact arm

2211, 2221‧‧‧bend

2212, 2222‧‧‧ protruding parts

3‧‧‧mask layer

31‧‧‧ shaded area

32‧‧‧Unshielded area

4‧‧‧Sheet layer

5‧‧‧ Non-conductive layer

51‧‧‧ first opening

6‧‧‧Adhesive layer

61‧‧‧second opening

7‧‧‧ Pressurized plate

8, 8a‧‧‧ interconnection components

81a‧‧‧Parts

811a‧‧‧Sheet

812a‧‧‧Adhesive layer

813a‧‧‧non-conductive layer

82a‧‧‧First contact arm

83a‧‧‧second contact arm

821a, 831a‧‧‧bend

822a, 832a‧‧‧ highlights

8b‧‧‧Interconnect components

81b‧‧‧ spacer

811b‧‧‧Sheet

812b‧‧‧Adhesive layer

813b‧‧‧non-conductive layer

82b‧‧‧First contact arm

83b‧‧‧second contact arm

821b, 831b‧‧‧bend

822b, 832b‧‧‧ highlights

841c, 841d, 841e‧‧‧bend

842c, 842d, 842e‧‧ ‧ protruding parts

9‧‧‧Interconnect module

91‧‧‧Selected area

10‧‧‧ probe chip

101‧‧‧ base

102‧‧‧First interconnected components

1021‧‧‧ spacers

1022‧‧‧First contact arm

20‧‧‧Intermediary

201‧‧‧ frame

202‧‧‧Second interconnected components

2021‧‧‧ spacers

2022‧‧‧First contact arm

2023‧‧‧second contact arm

30‧‧‧Device under test

40‧‧‧Interval transformer

50‧‧‧ boards

60‧‧‧ probe chip

601‧‧‧ base

602‧‧‧Interconnect components

6021‧‧‧ spacers

6022‧‧‧3rd contact arm

70‧‧‧Device under test

701‧‧‧First coupling point

80‧‧‧ boards

801‧‧‧Second coupling point

602a‧‧‧Interconnect components

6021a‧‧‧ spacers

6022a‧‧‧3rd contact arm

70a‧‧‧Device under test

80a‧‧‧ boards

100‧‧‧Electronic components

22a, 22b, 22c, 22d, 22e, 22f, 22g‧‧‧ contact structure

23a, 23b, 23c, 23d, 23e, 23f, 23g‧‧‧ contact structure

[Fig. 1] is a schematic view showing the formation of a conductive layer in the production method of the present invention.

[Fig. 2] is a schematic view showing the stacking of the sheet layer, the adhesive layer and the non-conductive layer of the manufacturing method of the present invention.

[Fig. 3] is an enlarged schematic view showing a partial structure of a sheet layer of the production method of the present invention.

[Fig. 4] is a schematic view showing lamination via a pressurizing plate in the production method of the present invention.

[Fig. 5] is a schematic view showing the formation of a singular contact structure of the manufacturing method of the present invention.

[Fig. 6] is an enlarged schematic view showing a partial structure of Fig. 5.

[Fig. 7] is a schematic view showing the formation of a joining section in the production method of the present invention.

[Fig. 8] is a structural schematic diagram of one of the interconnection elements of the manufacturing method of the present invention Figure.

[Fig. 9] is another schematic structural view of an interconnection element of the manufacturing method of the present invention.

[Fig. 10] is a perspective view of a stereoscopic appearance of an embodiment of the present invention.

[Fig. 11] is a perspective view showing a stereoscopic appearance of another embodiment of the present invention.

[Fig. 12A to Fig. 12C] is a schematic view showing the contact structure of the present invention having a different state.

[Fig. 13] is a schematic view showing the formation of an interconnect module of the manufacturing method of the present invention.

[Fig. 14] is a schematic view showing the preparation of a probe wafer or an interposer of the present invention.

[Fig. 15] is a schematic view showing the structure of a probe card according to an embodiment of the present invention.

[Fig. 16] Fig. 16 is a schematic view showing the structure of a probe card according to another embodiment of the present invention.

[Fig. 17] Fig. 17 is a schematic view showing the structure of a probe card according to still another embodiment of the present invention.

[Fig. 18] Fig. 17 is a schematic view showing a three-dimensional structure further formed in Fig. 17.

[Fig. 19] is a schematic diagram of coupling to an electronic component in accordance with another embodiment of the present invention.

[Fig. 20] is a schematic view showing the interconnection elements of the present invention interposed.

[21A to 21F] is a schematic diagram in which the interconnection elements of the present invention are interposed and have different states.

The invention will be described in detail below with reference to the drawings.

Please refer to FIG. 1 to FIG. 13 first, the present invention is an interconnection structure. The manufacturing method comprises the steps of: forming at least one patterned region 2 on a conductive layer 1, the patterned regions 2 are arranged in an array, and the patterned region 2 has at least one junction portion 21 and a contact The first contact arm 221 and the second contact arm 222 are respectively formed on the two sides of the confluence portion 21, and the first contact arm 221 and the second contact arm 222 are respectively formed with at least one The protrusions 2211 and 2222 are formed on the top ends of the first contact arm 221 and the second contact arm 222. The conductive layer 1 is made of beryllium copper alloy, phosphor bronze, spring steel or a group of nickel-titanium alloys; a mask layer 3 corresponding to the conductive layer 1 is disposed, and the mask layer 3 has a shielding area 31 corresponding to the confluence portion 21, and the corresponding contact structure 22 has a non-shielding area. 32, and the surface of the contact structure 22 is plated with a metal material, that is, the surface of the first contact arm 221 and the second contact arm 222 is plated with a metal material selected from the group consisting of nickel, gold, palladium, rhodium or platinum. Group, its electroplating system is composed of nickel/gold composition, nickel / gold / palladium / gold composition, nickel / gold / bismuth composition, nickel / gold / platinum composition or other composition as an example, thereby forming a sheet layer 4; at least a first opening 51 is formed in a non-conductive layer 5, The first opening 51 is made corresponding to the patterned region 2, and the material of the non-conductive layer 5 is selected from the group consisting of epoxy resin (FR4), polyimide or ceramic (Ceramic). a group of components; at least one second opening 61 is formed in an adhesive layer 6, the second opening 61 is made corresponding to the patterned region 2, and the second opening 61 is selected from a process using a process a lathe processing process or a laser processing process; sequentially stacking and using two corresponding pressing plates 7, laminating the sheet layer 4, the adhesive layer 6 and the non-conductive layer 5; and according to the first opening 51 And the second opening 61 singularizes the contact structure 22, which completely removes the confluence portion 21 according to the shielding region 31, and forms at least one connecting segment 23, as shown in FIG. 7, the singulation of the contact structure 22 is performed by using a process selected from an etching process, a stamping process, a laser process, or a drilling process, and after grinding through a lathe. Forming at least one interconnection element 8, which should be arranged in an array as well, for the purpose of clearly representing the structure of the interconnection element 8, only one of which is specifically described, and in this step, If the confluence portion 21 is partially removed according to the shielding region 31, at least one connecting portion 24 and at least one bonding portion 25 are formed. As shown in FIG. 9, the two adjacent first contact arms 221 are Formed from a joint section 25, and the other first contact arm 221 is formed from a joint section 24, and the joint section 25 and the joint section 24 are arranged at intervals, and the joint section 24 and the joint section 25 are apparent. It can be configured according to the needs of use.

Referring again to FIG. 10, according to the foregoing manufacturing method, an embodiment of the present invention provides an interconnection structure including: At least one interconnecting member 8a having a spacer 81a, a plurality of first contact arms 82a and a plurality of second contact arms 83a, the spacer 81a comprising at least one foil layer 811a, a plurality of adhesive layers 812a and a plurality of non-conductive layers 813a, the sheet layer 811a is located between the adhesive layers 812a, and the sheet layer 811a comprises a conductive layer selected from the group consisting of beryllium copper alloy, phosphor bronze, and spring. a group of steel or nickel-titanium alloys, and the first contact arms 82a are integrally formed from the conductive layer, and the surface of the first contact arms 82a is plated with a metal material selected from the group consisting of nickel and gold. a group of palladium, rhodium or platinum, the adhesive layer 812a being located between the non-conductive layers 813a; the first contact arms 82a extending in the same direction from the spacer 81a; the second contact arms 83a is oppositely extended toward the spacer 81a. Further, the first contact arms 82a and the second contact arms 83a correspond to each other and are arranged at intervals. The first contact arm 82a and the second contact arm 83a are Forming at least one curved portion 821a, 831a, respectively, and at the first Contact tip 83a and the arm 82a forming the second contact arm has a projection 822a, 832a.

Next, please refer to Figure 11 again, again according to the aforementioned manufacturing method. Another embodiment of the present invention provides an interconnect structure including at least one interconnecting member 8b having a spacer 81b, a plurality of first contact arms 82b, and a plurality of second contact arms 83b The spacer 81b includes at least one thin layer 811b, a plurality of adhesive layers 812b, and a plurality of non-conductive layers 813b. The first contact arm 82b and the second contact arm 83b are respectively formed with at least one curved portion 821b, 831b. And a protrusion 822b, 832b is formed on the top end of the first contact arm 82b and the second contact arm 83b, and the difference is mainly at: The first contact arm 82b and the second contact arm 83b are respectively opposite to each other and arranged at intervals; in practical applications, please refer to FIGS. 12A to 12C, regardless of whether the first contact arm 82a, 82b or The second contact arms 83a, 83b, the curved portions 841c, 841d, 841e and the protruding portions 842c, 842d, 842e may be different, and the first contact arms 82a, 82b are connected to the second The contact arms 83a, 83b have different pitches and may be respectively located on different planes to form a three-dimensional structure. In the step of the manufacturing method, the sheet layers 811a, 811b are bent, so that the first One of the contact arms 82a, 82b and the second contact arms 83a, 83b are located on different planes.

In the above, referring to FIG. 13 and FIG. 14, the present invention is a method for fabricating an interconnect structure, the method further comprising: repeatedly stacking the plurality of the thin layer 811b, the adhesive layer 812b, and the non-conductive layer. 813b and an interconnection module 9 is formed, that is, the interconnection element 8b is plural, and the figure is shown as an example of the interconnection element 8b having two corresponding first contact arms 82b and second contact arms 83b. The interconnection elements 8b are stacked on each other and form the interconnection module 9; A selected area 91 is defined in the interconnect module 9, and a probe wafer or an interposer is cut and formed according to the selected area 91.

Two aspects can be provided with respect to the application of the present invention. For the first aspect, please refer to As shown in FIG. 15, an embodiment of the present invention provides a probe card structure including a probe wafer 10 having a base 101 and a first interconnecting mold disposed on the base 101. The first interconnecting module 102 includes at least one first interconnecting component 102, the first interconnecting component 102 having a spacer 1021 and a plurality of first contact arms 1022. The first contact arms 1022 are The same as the spacer 1021; and a spacer 20 having a frame 201 and a second interconnect module disposed on the frame 201, the second interconnect module includes at least one The second interconnecting component 202 has a spacer 2021 and a plurality of first contact arms 2022. The first contact arms 2022 extend in the same direction from the spacer 2021 toward the spacer. The second contact arm 2023 of the first interconnecting module is coupled to a device to be tested 30, and the spacer 1021 is provided with a spacer transformer 40. The spacer transformer 40 is coupled to the first side of the second interconnect module on the opposite side of the first interconnect module Arm 2022, and the second system interconnect module 2023 with its second contact arm 50 is coupled to a circuit board.

Next, a second aspect of the present invention is shown in FIG. 16. Another embodiment of the present invention provides a probe card structure including a probe wafer 60 having a base 601 and a setting. In the interconnect module of the base 601, the interconnect module includes a plurality of interconnecting elements 602 having at least two spacers 6021 and a plurality of third contact arms 6022. The spacers 6021 are Corresponding to and parallel to each other; the third contact arm 6022 is connected to the spacers 6021, and the interconnecting component 602 is coupled to a device to be tested 70 by one end of the third contact arms 6022. The device to be tested 70 is provided with a plurality of first coupling points 701, and the other ends of the third contact arms 6022 are coupled to a circuit board 80. The circuit board 80 is provided with a plurality of second coupling points 801. Defining an interconnect element 602 in a first plane and defining The first plane is perpendicular to the second plane, and the third contact arm 6022 is coupled to the first coupling point 701 and the second coupling point 801 has a different pitch in the second plane.

According to the above description, the first aspect is configured with a spacer transformer 40, and in the second aspect, the spacer transformer 40 is not disposed. First, in the first aspect, the X direction and the Y direction are defined. The first contact arm 1022 of an interconnecting component 102 has a first pitch P ₁ in the X direction, a second pitch P ₂ in the Y direction, and a second contact of the second interconnecting component 202 . The arm 2023 has a third pitch P ₃ in the X direction, and has a fourth pitch P ₄ in the Y direction. Therefore, the second interconnecting member 202 passes through the spacer transformer 40 to change the third. The pitch P _{3 is} the first pitch P ₁ , and the first aspect has a total of four coupling points; for the second aspect, the X direction and the Y direction are also defined, and the first is connected to the first The third contact arm 6022 of the coupling point 701 has a fifth pitch P ₅ in the X direction, and the third contact arm 6022 connected to the second coupling point 801 has a sixth section in the X direction. The distance P ₆ has a seventh pitch P ₇ in the Y direction, so that the sixth pitch P ₆ is directly changed by the third contact arm 6022 to be the fifth pitch P ₅ , which means The spacer transformer 40 is not required to be disposed in the first mode, and the second embodiment has only two coupling points of the first coupling point 701 and the second coupling point 801.

Referring to FIG. 17, another embodiment of the present invention provides an interconnection structure including: at least one interconnection element 602a having at least two spacers 6021a and a plurality of The three contact arms 6022a, the spacers 6021a are corresponding to each other and parallel; the third contact arms 6022a are continuous with the spacers 6021a; wherein the interconnection members 602a can also utilize the third contact arms 6022a One end is coupled to a device to be tested 70a, and the other ends of the third contact arms 6022a are coupled to a circuit board 80a.

Here, the inventors need to specifically state that the third contact arms 6022a In the manufacturing method, the step of forming the patterned region further comprises: the confluent portions are two corresponding parallel parallel portions, and the contact structure comprises a third contact consecutive to the confluent portions The arm 6022a; and the sheet layer is bent such that the confluence portions are located on different planes. In summary, the third contact arms 6022a can form not only a different pitch in the X direction but also a three-dimensional structure in Y. The directions form distinct pitches.

Finally, referring to FIG. 19, the interconnect structure of the present invention further utilizes the interconnecting component 8b to be coupled to an electronic component 100, which is suitable for mounting on a battery or a power transmitter. The preferred electrical connection effect; as shown in Fig. 20, the different interconnection elements respectively form contact structures of different shapes and are mutually plugged, and the symbols are 22a to 22g, and 23a to 23g, which can be regarded as a male insertion. With the female insert, and the 21A to 21F are used to visualize the mutual insertion and have different appearances.

In summary, the technical means disclosed by the present invention can effectively solve the problems of the prior knowledge, achieve the intended purpose and efficacy, and are not found in the publication before publication, have not been publicly used, and have long-term progress, The invention referred to in the Patent Law is correct, and the application is filed according to law, and the company is invited to give a detailed examination and grant a patent for invention.

The above is only the preferred embodiments of the present invention, and the scope of the present invention is not limited thereto, that is, the equivalent changes and modifications made by the scope of the invention and the contents of the invention are all It should remain within the scope of this invention.

8a‧‧‧Interconnect components

81a‧‧‧Parts

811a‧‧‧Sheet

812a‧‧‧Adhesive layer

813a‧‧‧non-conductive layer

82a‧‧‧First contact arm

83a‧‧‧second contact arm

821a, 831a‧‧‧bend

822a, 832a‧‧‧ highlights

Claims (48)

A method for fabricating an interconnect structure includes the steps of: forming at least one patterned region on a conductive layer, the patterned region having at least one junction portion and a contact structure; and correspondingly providing a mask layer on the conductive layer And plating a metal material on the surface of the contact structure to form a thin layer, the mask layer has a shielding area corresponding to the confluent portion, and the corresponding contact structure has a non-shielding area; forming at least one non-conductive layer a first opening, the first opening is made corresponding to the patterned region; at least one second opening is formed in an adhesive layer, and the second opening is made corresponding to the patterned region; Stacking and laminating the sheet layer, the adhesive layer and the non-conductive layer; and singulating the contact structure according to the first opening and the second opening, and forming at least one interconnection element; wherein the contact structure is singulated The step of: further removing the confluence portion according to the shielding region to form at least one connecting segment; or removing the confluence portion according to the shielding region portion to form At least a coupling section and a binding section. The method of manufacturing the interconnect structure of claim 1, wherein the step of forming the thin layer further comprises: the contact structure comprising first contact arms and second contacts respectively formed on both sides of the confluent portion Arming and bending the sheet layer such that the first contact arm and the second contact arm are in different planes. The method for manufacturing an interconnect structure according to claim 1, wherein the step of forming the patterned region further comprises: the confluent portions being two corresponding parallel parallel portions, and the contact structure comprises A third contact arm that is continuous with the confluences. The manufacturing method of the interconnection structure according to claim 3, wherein the step of forming the sheet layer further comprises: bending the sheet layer such that the confluence portions are located on different planes. The method of fabricating the interconnect structure of claim 1, wherein the singulating the contact structure uses a process selected from the group consisting of an etching process, a stamping process, a laser process, or a drilling process. The manufacturing method of the interconnect structure of claim 1, further comprising the steps of: repeatedly stacking the plurality of thin layers, the adhesive layer and the non-conductive layer and forming an interconnect module. The method of fabricating the interconnect structure of claim 6, further comprising the step of defining a selected area in the interconnect module, and cutting and fabricating a probe wafer according to the selected area. The manufacturing method of the interconnect structure of claim 6, further comprising the step of: defining a selected area in the interconnect module, and cutting and forming an interposer according to the selected area. The method of manufacturing an interconnect structure according to claim 1, wherein the conductive layer material is selected from the group consisting of beryllium copper alloy, phosphor bronze, spring steel, or nickel titanium alloy. The method of manufacturing an interconnect structure according to claim 1, wherein the metal material is selected from the group consisting of nickel, gold, palladium, rhodium or platinum. The method for manufacturing an interconnect structure according to claim 1, wherein the non-conductive layer material is selected from the group consisting of epoxy resin (FR4), polyimide or ceramic. Group of. The method of manufacturing an interconnect structure according to claim 1, wherein the contact structure comprises first and second contact arms respectively formed on both sides of the confluent portion. The manufacturing method of the interconnection structure according to claim 12, wherein the first contact arm and the second contact arm are respectively formed with at least one bent portion, and the first contact arm and the second contact arm A protrusion is formed on the top end of the contact arm. The method of manufacturing an interconnect structure according to claim 12, wherein the first contact arm and the second contact arm have different spring rates, respectively. The method of fabricating the interconnect structure of claim 12, wherein the first contact arms have different spring rates. The method of fabricating the interconnect structure of claim 12, wherein the second contact arms have different spring rates. The manufacturing method of the interconnection structure according to claim 12, wherein the first contact arms have a first pitch and the second contact arms have a second section. distance. The method of manufacturing an interconnect structure according to claim 12, wherein the first contact arm and the second contact arm correspond to each other and are arranged at intervals. The manufacturing method of the interconnection structure according to claim 12, wherein the first contact arm and the second contact arm are respectively opposite to each other and arranged at intervals. An interconnect structure comprising: at least one interconnecting component, the interconnecting component having a spacer and a plurality of first contact arms, the spacer comprising at least one foil layer, a plurality of adhesive layers, and a plurality of non-components a conductive layer, the thin layer is located between the adhesive layers, and the adhesive layer is located between the non-conductive layers; the first contact arms extend in the same direction from the spacer, wherein The first contact arm extends a plurality of second contact arms in a reverse direction toward the spacer. The interconnect structure of claim 20, wherein the sheet layer comprises a conductive layer, and the surface of the first contact arms is plated with a metal material. The interconnect structure of claim 21, wherein the conductive layer material is selected from the group consisting of beryllium copper alloy, phosphor bronze, spring steel or nickel titanium alloy. The interconnect structure of claim 21, wherein the metal material is selected from the group consisting of nickel, gold, palladium, rhodium or platinum. The interconnecting structure of claim 20, wherein the first contact arms are respectively formed from a connecting segment, and the connecting segments are arranged at intervals. The interconnect structure of claim 20, wherein the two adjacent first contact arms are formed from a joint segment, and the joint segments are arranged in a spaced arrangement. The interconnecting structure of claim 20, wherein the two adjacent first contact arms are formed from a joint segment and the other first contact arm is formed from a joint segment, The joint section and the joint section are arranged at intervals. The interconnecting structure of claim 20, wherein the first contact arm and the second contact arm are respectively formed with at least one bent portion, and at the top of the first contact arm and the second contact arm A protrusion is formed. The interconnect structure of claim 20, wherein the first contact arms have a different pitch from the second contact arms. The interconnection structure of claim 20, wherein the first contact arm and the second contact arm correspond to each other and are arranged at intervals. The interconnecting structure of claim 20, wherein the first contact arm and the second contact arm are respectively opposite to each other and arranged at intervals. The interconnect structure of claim 20, wherein the first contact arm and the second contact arm are located in different planes. The interconnection structure of claim 20, wherein the interconnection elements are plural, and the interconnection elements are stacked on each other and form an interconnection module. An interconnect structure comprising: at least one interconnecting member having at least two spacers and a plurality of third contact arms, the spacers being corresponding to each other and parallel, the spacers comprising Having at least one foil layer, a plurality of adhesive layers, and a plurality of non-conductive layers, the foil layers being located between the adhesive layers, and the adhesive layer is located between the non-conductive layers; the third contact arm systems Coherently the spacers. The interconnecting structure of claim 33, wherein the sheet layer comprises a conductive layer, and the third contact arm is integrally formed from the conductive layer, and is plated on the surface of the third contact arm. There are metal materials. The interconnect structure of claim 33, wherein the third contact arms are bent such that the spacers are in different planes. The interconnecting structure of claim 33, wherein the third contact arms are respectively formed from a connecting segment, and the connecting segments are arranged at intervals. The interconnect structure of claim 33, wherein the two adjacent third contact arms are formed from a joint segment, and the joint segments are arranged at intervals. The interconnecting structure of claim 33, wherein the two adjacent third contact arms are formed from one bonding segment, and the other third contact arm is formed from a connecting segment, The joint section and the joint section are arranged at intervals. The interconnection structure of claim 33, wherein the third contact arm is formed with at least one bent portion, and a protrusion is formed at both ends of the third contact arm. The interconnection structure of claim 33, wherein the interconnection elements are plural, and the interconnection elements are stacked on each other and form an interconnection module. A probe card structure comprising: a probe wafer having a substrate and an interconnection module disposed on the substrate, the interconnection module comprising a plurality of interconnection elements, the interconnection element Bracket There are at least two spacers and a plurality of third contact arms, the spacers are corresponding to each other and parallel, and the spacer comprises at least one sheet layer, a plurality of adhesive layers and a plurality of non-conductive layers, wherein the sheet layer is located at Between the adhesive layers, and the adhesive layer is located between the non-conductive layers; the third contact arms are continuous with the spacers, and an interconnecting component thereof utilizes the third contact arms One end is coupled to a device to be tested, and the other ends of the third contact arms are coupled to a circuit board. The probe card structure of claim 41, wherein the sheet layer comprises a conductive layer, the third contact arms are integrally formed from the conductive layer, and the third contact arm surface is Electroplated with metal material. The probe card structure of claim 41, wherein the third contact arms are bent such that the spacers are located in different planes. The probe card structure of claim 41, wherein the device to be tested is provided with a plurality of first coupling points, and the circuit board is provided with a plurality of second coupling points, thereby defining one of the The interconnecting component is located in a first plane, and defines a first plane perpendicular to the first plane, and the third contact arm is coupled to the first coupling point and the second coupling point. The two planes have different pitches. A probe card structure comprising: a probe chip having a base body and a first interconnect module disposed on the base body, the first interconnect module comprising at least one first interconnect An element, the first interconnecting member having a spacer and a plurality of first contact arms extending from the spacer in the same direction; An interposer having a frame and a second interconnecting module disposed on the frame, the second interconnecting module comprising at least one second interconnecting component, the second interconnecting component Having a spacer member and a plurality of first contact arms extending from the spacer in the same direction and extending a plurality of second contact arms toward the spacer; wherein the first interconnect module The first contact arm is coupled to a device to be tested, and the spacer is provided with a spacer transformer. The spacer transformer is coupled to the second interconnect module on the opposite side of the first interconnect module. The first contact arm, and the second interconnect module is coupled to a circuit board by using the second contact arm thereof. The probe card structure of claim 45, wherein the spacers of the first interconnecting component and the second interconnecting component respectively comprise at least one thin layer, a plurality of adhesive layers and a plurality of non-conductive layers The sheet layer is located between the adhesive layers, and the adhesive layer is located between the non-conductive layers. The probe card structure of claim 45, wherein the sheet layer comprises a conductive layer, and the first contact arm and the second contact arm are integrally formed from the conductive layer. A contact arm and a surface of the second contact arm are plated with a metal material. The probe card structure of claim 45, wherein the first contact arm of the second interconnect module and the second contact arm correspond to each other and are arranged at intervals.