TWM464437U - Wafer supporting device - Google Patents
Wafer supporting device Download PDFInfo
- Publication number
- TWM464437U TWM464437U TW102212155U TW102212155U TWM464437U TW M464437 U TWM464437 U TW M464437U TW 102212155 U TW102212155 U TW 102212155U TW 102212155 U TW102212155 U TW 102212155U TW M464437 U TWM464437 U TW M464437U
- Authority
- TW
- Taiwan
- Prior art keywords
- wafer carrier
- wafer
- carrier device
- wafers
- support
- Prior art date
Links
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
本創作是關於一種晶圓承載裝置,特別是一種可使晶圓底部完全脫離下支撐件的晶圓承載裝置。The present invention relates to a wafer carrier device, and more particularly to a wafer carrier device that allows the bottom of the wafer to be completely detached from the lower support member.
半導體產業中,晶圓製程無疑地是最關鍵的環節之一,其決定了晶圓的性質,例如改變導電特性、降低內部缺陷或表面改質。例如,晶圓處理製程可包含熱擴散、化學氣相沉積(例如氧化矽或氮化矽薄膜)、退火製程或是蝕刻製程等等。In the semiconductor industry, wafer processing is undoubtedly one of the most critical aspects, which determine the properties of the wafer, such as changing the conductive properties, reducing internal defects or surface modification. For example, the wafer processing process may include thermal diffusion, chemical vapor deposition (eg, hafnium oxide or tantalum nitride thin film), an annealing process, or an etching process, and the like.
熱擴散主要是用於摻雜以形成PN接面,改變晶圓的導電性質,可應用於不同元件。沉積薄膜,例如氧化物或是氮化物薄膜則用以當作緩衝層,降低晶格常數的差異;或是當作絕緣層,以形成介電材料。退火處理則可以消除晶圓的內應力及缺陷,並改善摻雜密度。至於蝕刻製程,則是對晶圓實施表面處理,用以清潔表面、消除損傷層、減薄厚度或提升平坦度等等。無論晶圓製程的目的或手段為何,皆需要將多個晶圓排列在晶舟上面,用以批量處理。Thermal diffusion is mainly used for doping to form a PN junction, changing the conductive properties of the wafer, and can be applied to different components. A deposited film, such as an oxide or nitride film, is used as a buffer layer to reduce the difference in lattice constants; or as an insulating layer to form a dielectric material. Annealing eliminates internal stresses and defects in the wafer and improves doping density. As for the etching process, the wafer is subjected to a surface treatment for cleaning the surface, eliminating the damaged layer, thinning the thickness, or improving the flatness. Regardless of the purpose or means of the wafer process, multiple wafers need to be arranged on the wafer boat for batch processing.
一般而言,晶舟具有多個微凹槽位於兩側及底部,使晶圓能夠穩固的排列其上。以沉積薄膜製程為例,在以LPCVD製程沉積氧化物薄膜的時候,會將製程氣體(例如TEOS,四乙氧矽烷)引入高溫水平爐體中,並與晶圓表面產生反應。然而,微凹槽與晶圓之間的間隙狹小,使得氣流不易進入,如圖8A及8B所示,若使用傳統晶舟乘載晶圓W,晶圓W與晶舟槽底部So 的間距To 相當狹小,導致部分晶圓表面與氣體反應不完全,使得晶圓表面所沉積的薄膜厚度不均,尤其是接近微凹槽的位置膜厚較薄, 產生晶舟痕(boatmark),使得外觀上有明顯差異,並影響晶圓的品質,因此客戶的接受度也會下降。除此之外,在各種不同的製程中,其他製程流體、溫度梯度等反應氛圍也可能會無法均勻流通或分布,導致反應不均的情形產生,影響晶圓的外觀及性質。In general, the boat has a plurality of micro-grooves on both sides and at the bottom, so that the wafer can be stably arranged thereon. Taking the deposition film process as an example, when an oxide film is deposited by the LPCVD process, a process gas (such as TEOS, tetraethoxy decane) is introduced into the high temperature horizontal furnace body and reacted with the wafer surface. However, the gap between the micro-groove and the wafer is narrow, so that the airflow is not easy to enter. As shown in FIGS. 8A and 8B, if the conventional wafer boat is used to carry the wafer W, the distance between the wafer W and the bottom of the wafer boat slot S o The T o is quite narrow, which causes some of the wafer surface to react with the gas incompletely, so that the thickness of the film deposited on the surface of the wafer is not uniform, especially the film thickness near the micro-groove is thin, resulting in a boat mark. There are significant differences in appearance and affect the quality of the wafer, so customer acceptance will also decline. In addition, in various processes, reaction environments such as other process fluids and temperature gradients may not be uniformly distributed or distributed, resulting in uneven reaction and affecting the appearance and properties of the wafer.
有鑑於此,應當發展一種使製程流體及反應氛圍能夠更均勻地與晶圓表面反應的晶圓承載裝置取代傳統晶舟,以解決上述問題。In view of this, a wafer carrier device capable of more uniformly reacting a process fluid and a reaction atmosphere with a wafer surface should be developed to replace the conventional wafer boat to solve the above problems.
本創作提供一種晶圓承載裝置,其支撐底座能夠抵住晶圓之底部並使晶圓向上脫離下支撐件,減少晶圓承載裝置與晶圓的接觸面積,使製程進行時,製程流體及反應氛圍更順利的在晶圓以及晶圓承載裝置之間流通分布並與晶圓表面反應,解決了反應不均的問題。The present invention provides a wafer carrier device whose support base can abut the bottom of the wafer and lift the wafer upward from the lower support member, thereby reducing the contact area between the wafer carrier and the wafer, and making the process flow, process fluid and reaction. The atmosphere is more smoothly distributed between the wafer and the wafer carrier and reacts with the wafer surface, solving the problem of uneven reaction.
為了解決先前技術之問題,本創作之一實施例提供了一種晶圓承載裝置,其係用以承載多個晶圓進行一製程。晶圓承載裝置包含一上支撐件、一下支撐件以及一支撐底座。上支撐件位於晶圓承載裝置之上部。下支撐件位於晶圓承載裝置之下部。於製程以外的時間,下支撐件係用以承載存放多個晶圓。一支撐底座則設置於晶圓承載裝置之底部。於進行製程時,支撐底座抵住多個晶圓之底部使多個晶圓向上移動脫離下支撐件並傾斜靠向上支撐件,並由支撐底座與上支撐件承載多個晶圓。In order to solve the problems of the prior art, an embodiment of the present invention provides a wafer carrier device for carrying a plurality of wafers for a process. The wafer carrier includes an upper support, a lower support, and a support base. The upper support is located above the wafer carrier. The lower support is located below the wafer carrier. At times other than the process, the lower support is used to carry multiple wafers. A support base is disposed at the bottom of the wafer carrier. During the process, the support base is placed against the bottom of the plurality of wafers to move the plurality of wafers upwardly away from the lower support and tilted against the upward support, and the plurality of wafers are carried by the support base and the upper support.
以下藉由具體實施例配合所附的圖式詳加說明,當更容易瞭解本創作之目的、技術內容、特點及其所達成之功效。In the following, the specific embodiments and the accompanying drawings are explained in detail, and it is easier to understand the purpose, technical content, characteristics and effects achieved by the present invention.
1‧‧‧晶圓承載裝置1‧‧‧ wafer carrier
10‧‧‧上支撐件10‧‧‧Upper support
11‧‧‧上支撐桿11‧‧‧Upper support rod
20‧‧‧下支撐件20‧‧‧lower support
21‧‧‧下支撐桿21‧‧‧ Lower support rod
22‧‧‧底支撐桿22‧‧‧Bottom support rod
30‧‧‧支撐底座30‧‧‧Support base
31‧‧‧通孔31‧‧‧through hole
G1‧‧‧上支撐桿11之多個凹槽G1‧‧‧Multiple grooves on the upper support rod 11
G2‧‧‧下支撐桿21之多個凹槽G2‧‧‧Multiple grooves of the lower support rod 21
G3‧‧‧底支撐桿22之多個凹槽G3‧‧‧Multiple grooves of the bottom support rod 22
S‧‧‧G1的底部Bottom of S‧‧G1
T‧‧‧暗溝T‧‧‧ditch
W‧‧‧晶圓W‧‧‧ wafer
W’‧‧‧圖2B中,傾斜後的晶圓WW’‧‧‧ Figure 2B, the tilted wafer W
θ‧‧‧水平傾斜角度Θ‧‧‧ horizontal tilt angle
So ‧‧‧傳統晶舟的晶舟槽底部S o ‧‧‧The bottom of the crystal boat in the traditional boat
To ‧‧‧晶圓W與傳統晶舟的晶舟槽底部So 的間距The boat bottom of the groove S o T o ‧‧‧ the wafer W and the pitch of a conventional boat
W‧‧‧晶圓W‧‧‧ wafer
圖1為本創作一實施例之晶圓承載裝置的立體示意圖。FIG. 1 is a perspective view of a wafer carrier device according to an embodiment of the present invention.
圖2A為本創作一實施例之製程前晶圓承載裝置(不含支撐底座)承載晶圓的橫剖面示意圖。2A is a cross-sectional view of a wafer carrying device (without a support base) carrying a wafer before the process of the present invention.
圖2B為本創作一實施例之製程中晶圓承載裝置(包含支撐底座)承 載晶圓的橫剖面示意圖。2B is a wafer carrier device (including a support base) in the process of creating an embodiment of the present invention. A schematic cross-sectional view of a wafer.
圖3A為本創作一實施例之製程前晶圓承載裝置承載晶圓的局部縱剖面示意圖。3A is a partial longitudinal cross-sectional view of a wafer carrier carrying wafer before the process of the present invention.
圖3B為本創作一實施例之製程中晶圓承載裝置承載晶圓的局部縱剖面示意圖。3B is a partial longitudinal cross-sectional view of a wafer carrier carrying wafer in a process of the present invention.
圖4為本創作一實施例之支撐底座的側面示意圖。4 is a schematic side view of a support base according to an embodiment of the present invention.
圖5A及圖5B為本創作一實施例之晶圓承載裝置的不同角度的暗溝示意圖。5A and FIG. 5B are schematic diagrams showing dark trenches at different angles of the wafer carrier device according to an embodiment of the invention.
圖6A、圖6B、圖6C及圖6D為本創作根據圖5A的其他實施例的示意圖。6A, 6B, 6C, and 6D are schematic views of other embodiments of the creation according to Fig. 5A.
圖7A、圖7B及圖7C為本創作根據圖5B的其他實施例的示意圖。7A, 7B, and 7C are schematic views of other embodiments of the creation according to Fig. 5B.
圖8A及圖8B為先前技術中的晶舟乘載晶圓的局部示意圖。8A and 8B are partial schematic views of a wafer boat carrier wafer in the prior art.
請參考圖1,圖1所示為本創作一實施例之一種晶圓承載裝置,其係用以承載多個晶圓進行一製程。晶圓承載裝置1包含一上支撐件10、一下支撐件20以及一支撐底座30。上支撐件10位於晶圓承載裝置1之上部。下支撐件20位於晶圓承載裝置1之下部。如圖2A所示,於製程以外的時間,下支撐件20(包含下支撐桿21及底支撐桿22),係用以承載存放多個晶圓W。圖3A則是圖2A的側視剖面圖,其顯示了在製程以外的時間,晶圓W係立於下支撐件20的底支撐桿22之上。再如圖2B、3B所示,於進行製程時,支撐底座30則設置於晶圓承載裝置1之底部。支撐底座30抵住多個晶圓W之底部使多個晶圓W向上移動脫離下支撐件20並傾斜靠向上支撐件10,並由支撐底座30與上支撐件10承載多個晶圓W。因此,原本的晶圓W會因為受到支撐底座向上頂起而移動至W’的位置(如圖2B所示)。須注意者,為了保持圖面整潔,下支撐桿21並未示於圖3A及3B。於一實施例中,請參照圖4,支撐底座30之頂面具有一水平傾斜角度θ ,較佳者,水平傾斜角度θ之範圍為5到40度。因為支撐底座30具有一高 度,因此可以抵住晶圓W使之向上移動;並進一步具有一傾斜角度θ ,使得晶圓W可以傾斜靠向上支撐件10。較佳者,如圖1及圖2B所示,支撐底座30具有至少一通孔31,垂直貫穿支撐底座30,用以使製程流體及反應氛圍通過,使反應更為均勻。Please refer to FIG. 1. FIG. 1 illustrates a wafer carrier device for carrying a plurality of wafers for a process. The wafer carrier device 1 includes an upper support member 10, a lower support member 20, and a support base 30. The upper support 10 is located above the wafer carrier 1 . The lower support 20 is located below the wafer carrier 1 . As shown in FIG. 2A, the lower support member 20 (including the lower support rod 21 and the bottom support rod 22) is used to carry and store a plurality of wafers W at a time other than the process. 3A is a side cross-sectional view of FIG. 2A showing the wafer W erected above the bottom support bar 22 of the lower support member 20 at a time other than the process. As shown in FIGS. 2B and 3B, the support base 30 is disposed at the bottom of the wafer carrier 1 during the manufacturing process. The support base 30 is pressed against the bottom of the plurality of wafers W to move the plurality of wafers W away from the lower support 20 and tilted against the upper support 10, and the plurality of wafers W are carried by the support base 30 and the upper support 10. Therefore, the original wafer W is moved to the position of W' by the support base up (as shown in FIG. 2B). It should be noted that in order to keep the drawing clean, the lower support bar 21 is not shown in FIGS. 3A and 3B. In an embodiment, referring to FIG. 4, the top mask of the support base 30 has a horizontal tilt angle θ . Preferably, the horizontal tilt angle θ ranges from 5 to 40 degrees. Since the support base 30 has a height, it can be moved against the wafer W; and further has an inclination angle θ so that the wafer W can be tilted against the upward support 10. Preferably, as shown in FIG. 1 and FIG. 2B, the support base 30 has at least one through hole 31 extending vertically through the support base 30 for passing the process fluid and the reaction atmosphere to make the reaction more uniform.
關於上支撐件10的結構,請再參考圖1。於一實施例中,上支撐件10包含至少二個上支撐桿11相對設置於晶圓承載裝置1之上部兩側,且每一上支撐桿11具有多個凹槽G1間隔排列設置於其上用以支撐多個晶圓W。較佳者,上支撐件10之二個上支撐桿11係為平行設置。關於凹槽G1的形狀,較佳者,每一上支撐桿11的多個凹槽G1為多個形槽(如圖5B所示)。另外,亦可為多個U形槽(如圖7A所示)、多個V形槽(如圖7B所示)或是多個梯形漸縮槽(如圖7C所示)。Regarding the structure of the upper support 10, please refer to FIG. In an embodiment, the upper support member 10 includes at least two upper support rods 11 disposed opposite to the upper sides of the wafer carrier device 1 , and each upper support rod 11 has a plurality of grooves G1 spaced apart from each other. Used to support multiple wafers W. Preferably, the two upper support bars 11 of the upper support member 10 are arranged in parallel. Regarding the shape of the groove G1, preferably, the plurality of grooves G1 of each upper support rod 11 are plural Shaped groove (as shown in Figure 5B). Alternatively, a plurality of U-shaped grooves (as shown in FIG. 7A), a plurality of V-shaped grooves (as shown in FIG. 7B) or a plurality of trapezoidal tapered grooves (as shown in FIG. 7C) may be used.
關於下支撐件20的結構,請再參考圖1。於一實施例中,下支撐件20包含至少二個下支撐桿21相對設置於晶圓承載裝置1之下部兩側,且每一下支撐桿21具有多個凹槽G2間隔排列設置於其上用以支撐多個晶圓W。較佳者,下支撐件20之二個下支撐桿21係為平行設置。較佳者,請再參考圖1,於一實施例中,下支撐件20更包含一底支撐桿22設置於晶圓承載裝置1之中央底部,且底支撐桿22具有多個凹槽G3間隔排列設置於其上用以支撐多個晶圓W。Regarding the structure of the lower support member 20, please refer to FIG. In one embodiment, the lower support member 20 includes at least two lower support rods 21 disposed opposite to the lower sides of the wafer carrier device 1, and each of the lower support rods 21 has a plurality of grooves G2 spaced apart therefrom. To support a plurality of wafers W. Preferably, the two lower support bars 21 of the lower support member 20 are arranged in parallel. Preferably, referring to FIG. 1 , in an embodiment, the lower support member 20 further includes a bottom support rod 22 disposed at a central bottom of the wafer carrier 1 , and the bottom support rod 22 has a plurality of grooves G3 spaced apart. Arranged thereon to support a plurality of wafers W.
根據上述內容,於非製程的時候,晶圓承載裝置1可用於存放晶圓W;於製程的時候,則可以使晶圓W的底部邊緣脫離下支撐件20的凹槽(G2、G3),避免了以往因為晶圓W接觸凹槽而導致反應不均勻的問題。可理解的是,根據本創作的概念,亦即於製程時,使晶圓邊緣脫離支撐件的技術特徵,亦可以應用於不同的製程。另外,製程可為熱處理製程,例如一熱擴散製程、一化學氣相沉積製程(例如氧化矽或氮化矽)、一退火製程或是一蝕刻製程等等。本創作之目的是為了使晶圓表面在製程時能夠均勻的反應。例如,當進行沉積薄膜的製程,本創作的晶圓承載裝置1 可使製程氣體順利流動,並與晶圓表面均勻反應,避免了因邊緣接觸效應所導致的沉積膜厚不均。若為一高溫退火製程,則可使晶圓表面均勻的接觸到高溫氛圍,使晶圓獲得均勻且良好的性質。或者是進行蝕刻製程時,例如氣相蝕刻或液相蝕刻,對晶圓實施表面處理,用以清潔表面、消除損傷層、減薄厚度及提升平坦度,此時製程流體可以均勻分布以得到良好的蝕刻結果。另外,本創作之晶圓承載裝置1可為一石英晶圓承載裝置、碳化矽(SiC)晶圓承載裝置或一氧化鋁(Sapphire、Al2 O3 )晶圓承載裝置,依據使用者的需求而選用。這些不同材質的晶圓承載裝置,除了耐高溫以外,也不易與製程流體及反應氛圍產生反應(例如耐酸鹼),因此可以減少製程中的汙染。According to the above, during the non-process, the wafer carrier device 1 can be used to store the wafer W; during the process, the bottom edge of the wafer W can be separated from the groove (G2, G3) of the lower support member 20, The problem of uneven reaction due to the wafer W contacting the groove has been avoided. It can be understood that according to the concept of the present creation, that is, the technical feature of the wafer edge being separated from the support during the process, it can also be applied to different processes. In addition, the process may be a heat treatment process, such as a thermal diffusion process, a chemical vapor deposition process (such as hafnium oxide or tantalum nitride), an annealing process or an etching process, and the like. The purpose of this creation is to enable the wafer surface to react evenly during the process. For example, when the process of depositing a thin film is performed, the wafer carrying device 1 of the present invention can smoothly flow the process gas and uniformly react with the surface of the wafer, thereby avoiding uneven thickness of the deposited film due to the edge contact effect. If it is a high temperature annealing process, the surface of the wafer can be uniformly exposed to a high temperature atmosphere, so that the wafer can obtain uniform and good properties. Or, during the etching process, such as vapor phase etching or liquid phase etching, the wafer is surface-treated to clean the surface, remove the damaged layer, reduce the thickness, and improve the flatness. At this time, the process fluid can be evenly distributed to obtain good. Etching results. In addition, the wafer carrier device 1 of the present invention may be a quartz wafer carrier device, a silicon carbide (SiC) wafer carrier device or an alumina (Sapphire, Al 2 O 3 ) wafer carrier device, according to the needs of the user. And choose. These wafer carrier devices of different materials, in addition to high temperature resistance, are not easily reacted with process fluids and reaction atmospheres (for example, acid and alkali resistance), thereby reducing contamination during the process.
除了上述可使晶圓W底部脫離下支撐件20的技術特徵,根據本創作的一實施例,晶圓承載裝置1還具有一種特殊的暗溝構造。請參考圖5A及圖5B,其中每一晶圓W係分別斜靠於二個上支撐桿11的每一凹槽G1內且每一晶圓W之周緣與二個上支撐桿11的每一凹槽G1之底部具有一間隙用以形成一暗溝T提供製程流體及反應氛圍均勻流動分佈。In addition to the above-described technical features that allow the bottom of the wafer W to be detached from the lower support member 20, the wafer carrier device 1 also has a special underdrain configuration in accordance with an embodiment of the present invention. Referring to FIG. 5A and FIG. 5B, each of the wafers W is respectively inclined in each of the grooves G1 of the two upper support bars 11 and each of the periphery of the wafer W and each of the two upper support bars 11 The bottom of the groove G1 has a gap for forming a dark trench T to provide a uniform flow distribution of the process fluid and the reaction atmosphere.
傳統的晶舟,其兩側的支撐件,皆以較為密合的方式,固定晶圓的兩側邊緣,並沒有考慮到暗溝的設計。若通入製程流體,則流體無法順利流通,導致晶圓的兩側邊緣的表面與流體反應不均勻,以沉積薄膜的製程而言,會造成膜厚不均,產生晶舟痕(boatmark)。同樣地,若是進行高溫退火的反應,因為高溫氛圍的不均勻,也會使得晶圓退火後的性質受到影響。若是進行蝕刻,蝕刻流體的不均勻分布可能得到不理想的蝕刻結果。根據本創作的晶圓承載裝置(圖5A及5B),其所提供的凹槽G1具有加寬加深之特徵,在進行製程的時候,僅有晶圓W周緣附近的背面斜靠於凹槽G1的內壁上,形成線接觸,且晶圓W周緣與凹槽G1的底部S(即晶圓W周緣的離心方向所指向的凹槽G1底部)之間具有一間隙形成一寬深的暗溝T,得以讓製程流體及反應氛圍順利 通過及分布,使得晶圓W周緣附近的表面得以與製程流體均勻反應。凹槽G1的設計上,以能夠固持住晶圓為原則,並盡量加寬加大,以得到寬深的暗溝T。此處,暗溝T的延伸方向即為凹槽G1的延伸方向。較佳者,多個凹槽G1的底部S為弧形向下延伸(如圖5A所示)。此外,亦可傾斜向下延伸(如圖6A所示)或是多段向下延伸(如圖6B、6C及6D所示)。The traditional boat, the support members on both sides, fix the sides of the wafer in a relatively close manner, and does not consider the design of the dark groove. If the process fluid is introduced, the fluid cannot flow smoothly, and the surface of both sides of the wafer reacts unevenly with the fluid. In the process of depositing the film, the film thickness is uneven and a boatmark is generated. Similarly, in the case of high-temperature annealing, the properties of the wafer after annealing are affected by the unevenness of the high-temperature atmosphere. If etching is performed, uneven distribution of the etching fluid may result in undesirable etching results. According to the wafer carrying device of the present invention (Figs. 5A and 5B), the groove G1 provided has the feature of widening and deepening, and only the back surface near the periphery of the wafer W is inclined to the groove G1 during the process. On the inner wall, a line contact is formed, and a gap between the periphery of the wafer W and the bottom S of the groove G1 (ie, the bottom of the groove G1 pointed by the circumferential direction of the periphery of the wafer W) forms a wide and dark dark groove T. To make the process fluid and reaction atmosphere smooth Through and distribution, the surface near the periphery of the wafer W is allowed to react uniformly with the process fluid. The design of the groove G1 is based on the principle of being able to hold the wafer, and is widened as much as possible to obtain a dark trench T. Here, the extending direction of the dark groove T is the extending direction of the groove G1. Preferably, the bottom S of the plurality of grooves G1 extends downward in an arc shape (as shown in Fig. 5A). In addition, it may extend obliquely downward (as shown in FIG. 6A) or multiple segments downward (as shown in FIGS. 6B, 6C and 6D).
綜合上述,藉由本創作所提供的一種晶圓承載裝置,其支撐底座能夠抵住晶圓之底部並使晶圓向上脫離下支撐件,減少晶圓承載裝置與晶圓的接觸面積,使製程流體及反應氛圍更順利的在晶圓以及晶圓承載裝置之間流通分布並與晶圓表面反應,解決了反應不均的問題。In summary, the wafer carrier device provided by the present invention can support the base against the bottom of the wafer and lift the wafer upward from the lower support member, thereby reducing the contact area between the wafer carrier and the wafer, and making the process fluid The reaction environment is more smoothly distributed between the wafer and the wafer carrier and reacts with the wafer surface to solve the problem of uneven reaction.
以上所述之實施例及圖式僅是為說明本創作之技術思想及特點,其目的在使熟習此項技藝之人士能夠瞭解本創作之內容並據以實施,當不能以之限定本創作之專利範圍,即大凡依本創作所揭示之精神所作之均等變化或修飾,仍應涵蓋在本創作之專利範圍內。The embodiments and drawings described above are only for explaining the technical idea and characteristics of the present invention, and the purpose thereof is to enable those skilled in the art to understand the contents of the present invention and implement them according to the present invention. The scope of patents, that is, the equivalent changes or modifications made by the authors in accordance with the spirit of this creation, shall remain covered by the scope of this creation.
1‧‧‧晶圓承載裝置1‧‧‧ wafer carrier
10‧‧‧上支撐件10‧‧‧Upper support
11‧‧‧上支撐桿11‧‧‧Upper support rod
20‧‧‧下支撐件20‧‧‧lower support
21‧‧‧下支撐桿21‧‧‧ Lower support rod
22‧‧‧底支撐桿22‧‧‧Bottom support rod
30‧‧‧支撐底座30‧‧‧Support base
31‧‧‧通孔31‧‧‧through hole
G1‧‧‧上支撐桿11之多個凹槽G1‧‧‧Multiple grooves on the upper support rod 11
G2‧‧‧下支撐桿21之多個凹槽G2‧‧‧Multiple grooves of the lower support rod 21
G3‧‧‧底支撐桿22之多個凹槽G3‧‧‧Multiple grooves of the bottom support rod 22
Claims (11)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW102212155U TWM464437U (en) | 2013-06-28 | 2013-06-28 | Wafer supporting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW102212155U TWM464437U (en) | 2013-06-28 | 2013-06-28 | Wafer supporting device |
Publications (1)
Publication Number | Publication Date |
---|---|
TWM464437U true TWM464437U (en) | 2013-11-01 |
Family
ID=49991370
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW102212155U TWM464437U (en) | 2013-06-28 | 2013-06-28 | Wafer supporting device |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWM464437U (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108838984A (en) * | 2018-08-19 | 2018-11-20 | 苏州沃斯曼精密机械有限公司 | A kind of tilting storing unit of tooling chuck |
CN110797286A (en) * | 2018-08-02 | 2020-02-14 | 奇景光电股份有限公司 | Wafer rack |
CN114267619A (en) * | 2021-12-27 | 2022-04-01 | 新阳硅密(上海)半导体技术有限公司 | Tilting device and wafer same-side tilting method |
-
2013
- 2013-06-28 TW TW102212155U patent/TWM464437U/en not_active IP Right Cessation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110797286A (en) * | 2018-08-02 | 2020-02-14 | 奇景光电股份有限公司 | Wafer rack |
CN108838984A (en) * | 2018-08-19 | 2018-11-20 | 苏州沃斯曼精密机械有限公司 | A kind of tilting storing unit of tooling chuck |
CN114267619A (en) * | 2021-12-27 | 2022-04-01 | 新阳硅密(上海)半导体技术有限公司 | Tilting device and wafer same-side tilting method |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR102417931B1 (en) | Substrate supporting device and substrate processing apparatus including the same | |
JP5386046B1 (en) | Susceptor support and epitaxial growth apparatus provided with this susceptor support | |
KR101608947B1 (en) | Semiconductor substrate support susceptor for vapor-phase epitaxy, epitaxial wafer manufacturing device, and epitaxial wafer manufacturing method | |
US20130109192A1 (en) | Susceptor with ring to limit backside deposition | |
JP5237390B2 (en) | Epitaxial barrel susceptor with improved film thickness uniformity | |
JP5243465B2 (en) | Plasma processing equipment | |
US20100107974A1 (en) | Substrate holder with varying density | |
TWI505400B (en) | Susceptor | |
KR20100029772A (en) | Susceptor for improving throughput and reducing wafer damage | |
WO2012066752A1 (en) | Susceptor and method of manufacturing epitaxial wafer | |
TWM464437U (en) | Wafer supporting device | |
JP2013153171A (en) | Plasma processing apparatus and plasma processing method | |
TW201732077A (en) | Flat susceptor with grooves for minimizing temperature profile across a substrate | |
CN107326342A (en) | For the graphite plate in MOCVD device | |
JP2007243167A (en) | Susceptor and apparatus for manufacturing epitaxial wafer | |
JP2016183087A (en) | Manufacturing method for silicon carbide epitaxial substrate | |
TWI628734B (en) | Susceptor for improved epitaxial wafer flatness and methods for fabricating a semiconductor wafer processing device | |
JP2024133383A (en) | Susceptor | |
US10410909B2 (en) | Waffer pedestal and support structure thereof | |
TW201005803A (en) | Silicon epitaxial wafer and method for manufacturing the same | |
TW201721718A (en) | Method for producing a semiconductor wafer with epitaxial layer in a deposition chamber, apparatus for producing a semiconductor wafer with epitaxial layer, and semiconductor wafer with epitaxial layer | |
JP5440589B2 (en) | Vapor growth apparatus and epitaxial wafer manufacturing method | |
JP2017199745A (en) | Susceptor | |
TW201332055A (en) | Susceptor | |
JP2001127143A (en) | Substrate supporting device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4K | Annulment or lapse of a utility model due to non-payment of fees |