M440455 五、新型說明： 【新型所屬之技術領域】 本創作係關於一種氣體填充系統之數位流量控制裝 置’由指-種控制填充至—晶圓載具内之氣體流量的數位 流量控制裝置。 【先前技術】 半導體製程中，晶圓的處理及製造期間係藉由自動化 設備將裝載有晶圓之晶圓载具搬運至不同的製程區。為了 達到高潔淨環境的要求，必須透過氣體填充系統將氮氣或 潔淨氣體(Clean Dry Air，CDA)填充於晶圓載具巾，以排除 晶圓載具内部的氧氣及水氣，進而避免晶圓載具内之晶圓 產生化學反應導致晶圓的汙染而降低生產良率。 u ”、、第1圖所示’其係為習知氣體填充系統應用於 晶圓載具200的示意圖，由氣體供應器1〇所輸出之氣體(例 如氮氣或潔淨氣體等）的流量監控係藉由經過例如浮球流 =計之機械式流量計40來量測充氣管路3〇中的氣體流 1，並配合控 20以人為進行氣體流量的控制；但是， =於機械式抓里6十40無法讀出有效之量測數值，故通常在 =械式流量計40後端加震一壓力計5〇，壓力計5〇係依相 2官路下壓力與流4變化成正比之原理來進行流量變化之 則’以作為充氣管路30是否異常之判斷依據；此外，填 充至該晶圓載具之氣體係藉由抽氣幫浦％並由控制間 20控制開關以透過出氣管路60排出。 3 M44Q455 然而，上述藉由機械式流量計40及壓力計50並以人 為調整控制閥20的氣體流量控制方式係無法在特定狀況下 進行快速調整，例如當廠端之氣壓壓降、氣體供應器10或 充氣管路30内部氣壓異常等，而無法即時因應製程狀況來 控制調整填充至晶圓載具200之氣體流量。 因此，習知技術中，應用於晶圓載具之氣體填充裝置 係具有無法精確監控與即時調整氣體流量之缺點。 ®【新型内容】 本創作之一目的係提供一種氣體填充系統之數位流量 控制裝置，其係用於控制填充至一晶圓載具内之氣體的流 量，並可達成準確及快速的氣體流量控制。 為達上述目的及其他目的，本創作之氣體填充系統之 數位流量控制裝置係用於根據一設定流量值控制填充至一 晶圓載具内之氣體的流量，該數位流量控制裝置包含：一 • 主控電腦設備，具有一程式控制器，該主控電腦設備用於 接收該設定流量值以產生一目標流量訊號並透過該程式控 制器傳送；及一質量流量控制器，係裝設於輸送氣體至該 晶圓載具内的充氣管路上以及與該程式控制器電性連接， 該質量流量控制器用於根據所接收之該目標流量訊號控制 該質量流量控制器内之電控閥門以調節該充氣管路内氣體 的流量。 於一實施例中，該氣體填充系統更包含：該主控電腦 設備更用於供一調節訊號的設定，以使該主控電腦設備基 4 M44Q455 於該設定流量值及該調節訊號產生該目標流量訊號，其中 該=訊號係包含—第-充氣速率衫值及-第二充氣速 率。又疋值《^第A氣速率設定值係用於控制該質量流量 控制器以使氣體的流量值於一第一時間值内線性增加到該 f定流量值’該第二充氣速率設定值係用於控制該質量流 =控制器以使氣體的流量值於—第二時間值内自該設定流 $值線性降至零。 〜於-實施例中，該質量流量控制器更用於侦測該充氣 :路内氣體的流量以產生—實際流量訊號，並透過該程式 控制讀遞至魅控電腦設備巾以紀錄之。 摘料善技術中必須人為操控而無法 以無法準確判讀絲管路喊體流量 ί點’而可藉由數位式之質量流量控制器控制填充至晶 =具内之氣㈣流量，而可達成準確及快速的氣 【實施方式】 為充分瞭解本創作之目的、特徵及功效，兹 具體之實施例，並配合所附 9 " 明，說明如後： ^式料創作做-詳細說 請一併參照第2圖及第3圖，第2圖係為 實施例中數位流量控制裝置 乍於一 創作於, 万塊圖，第3圖係為本 ，作Γ實心中數位流量控缝置助於氣體填充系Γ 不思圖。本麟實施狀數位流量控職置_係應用 M44Q455 於半導體元件製程中，#係可控制填充至一晶圓載具内之 氣體的流量；其中，數位流量控制裝置1〇〇主要包含主控 電腦設備11G及質量流量控制器12G，而可根據設定流量值 m控制填充至晶圓载具2〇〇内之氣體的流量。 該主控電腦設備110具有程式控制器111，該程式控制 器hi係可例如為可程式邏輯控制器（Pr〇g疆脱此M440455 V. New description: [New technical field] This is a digital flow control device for a gas filling system that controls the flow of gas into the wafer carrier by finger-type control. [Prior Art] In the semiconductor manufacturing process, wafer-loaded wafer carriers are transported to different process areas by automated equipment during processing and manufacturing of wafers. In order to meet the requirements of a high clean environment, nitrogen or clean gas (CDA) must be filled in the wafer carrier towel through a gas filling system to eliminate oxygen and moisture inside the wafer carrier, thereby avoiding the inside of the wafer carrier. The wafer produces a chemical reaction that causes contamination of the wafer and reduces production yield. u", Figure 1 is a schematic diagram of a conventional gas filling system applied to the wafer carrier 200, and the flow monitoring of the gas (such as nitrogen or clean gas) outputted by the gas supplier 1 is used. The gas flow 1 in the gas line 3〇 is measured by a mechanical flow meter 40 such as a float flow meter, and the control of the gas flow is controlled by the control 20; however, = 10 in the mechanical grip 40 can not read the effective measurement value, so usually at the back of the = mechanical flowmeter 40 shocked a pressure gauge 5 〇, the pressure gauge 5 〇 according to the phase 2 official road pressure and flow 4 change proportional to the principle The flow rate change is determined as the basis for determining whether the gas line 30 is abnormal; in addition, the gas system filled to the wafer carrier is controlled by the pumping unit and controlled by the control room 20 to be discharged through the gas outlet line 60. 3 M44Q455 However, the above-mentioned gas flow control method of mechanically adjusting the control valve 20 by the mechanical flow meter 40 and the pressure gauge 50 cannot be quickly adjusted under certain conditions, for example, the pressure drop at the factory end, the gas supply. 10 or inflatable tube 30 The internal air pressure is abnormal, and the gas flow filled into the wafer carrier 200 cannot be controlled in time according to the process conditions. Therefore, in the prior art, the gas filling device applied to the wafer carrier has the inability to accurately monitor and adjust the gas in real time. Disadvantages of Flow. ® [New Content] One of the purposes of this creation is to provide a digital flow control device for a gas filling system that is used to control the flow of gas filled into a wafer carrier and achieve accurate and fast flow. Gas flow control. For the above purposes and other purposes, the digital flow control device of the gas filling system of the present invention is for controlling the flow rate of gas filled into a wafer carrier according to a set flow value, the digital flow control device comprising : a main control computer device having a program controller for receiving the set flow value to generate a target flow signal and transmitting through the program controller; and a mass flow controller, the system is installed Transmitting gas to the gas line in the wafer carrier and to the program controller Connected, the mass flow controller is configured to control an electronically controlled valve in the mass flow controller to adjust a flow rate of gas in the gas line according to the received target flow signal. In an embodiment, the gas filling system further comprises The main control computer device is further configured to provide an adjustment signal so that the main control computer device base 4 M44Q455 generates the target flow signal at the set flow value and the adjustment signal, wherein the signal system includes - The inflation rate value and the second inflation rate. The threshold value is used to control the mass flow controller to linearly increase the flow value of the gas within a first time value to the predetermined value. The flow value 'this second inflation rate setting is used to control the mass flow = controller to cause the flow value of the gas to linearly decrease from the set flow $ value to zero within the second time value. In the embodiment, the mass flow controller is further configured to detect the inflation: the flow of the gas in the road to generate an actual flow signal, and the program is controlled to read and record to the computer device. In the technique of picking good materials, it is necessary to manually control and cannot accurately correct the flow of the silk pipe. The digital flow controller can control the flow of gas into the crystal (4) by the digital mass flow controller. And the rapid gas [Embodiment] In order to fully understand the purpose, characteristics and efficacy of this creation, the specific examples, and with the accompanying 9 " Ming, explain as follows: ^ style material creation - detailed please please Referring to FIG. 2 and FIG. 3, FIG. 2 is a digital flow control device in the embodiment, which is created in a 10,000-block diagram, and the third diagram is based on the solid-state digital flow control slit. Filling the system is not a problem. Benlin implementation digital flow control position _ system application M44Q455 in the semiconductor component manufacturing process, # system can control the flow of gas filled into a wafer carrier; wherein, the digital flow control device 1 〇〇 mainly contains the main control computer equipment The 11G and the mass flow controller 12G can control the flow rate of the gas filled into the wafer carrier 2〇〇 according to the set flow value m. The master computer device 110 has a program controller 111, which can be, for example, a programmable logic controller (Pr〇g
Logic ^ntroller，PLC) ’該主控電腦設備n〇用於接收該設定流 里值如使用者將此值輸人至該主控電腦設備内）以產 生目軚仙·里訊唬si並透過該程式控制器1U傳送；如第 3圖所示，該質晋、、&旦 "丨L 夏控制器（Mass Flow Controller) 120 係 裝設於輸送氣體至兮曰 與該程式控制g : 内的充氣管路30上以及 於根據所麵切電性連接’該質纽量㈣11 120用 3, 19Π ^ ^ ^ 目標流量訊號S1控制該質量流量控制 藉以達成準確3門以調節該充4^3()内氣體的流量’ 該質量流量工：之自動化數位流量控制。 體流量之流量係包含可㈣充氣管路30中氣 具體而言，該产：機構並具有調節氣體流量之電控閥門； 觸方式來量==應__如以感應流體溫差之非接 閥或壓電式抑告〜量；該電控閥門係例如為電磁式控制 式控制器當該f量流量控制器12G接收由該程 制器120係根據1出之目標流量訊號S1時’該質量流量控 小，藉以流量訊號si來控制電控閥門之大 器120之氣體流息變該充氣管路30上通過該質量流量控制 /;η·里’達成自動化之數位流量控制。 6 M440455 請一併參照第2圖及第4B圖，於本創作一較佳實施例 中，該主控電腦設備110更用於供一調節訊號S2的設定， 以使該主控電腦設備110基於該設定流量值m及該調節訊 號S2產生該目標流量訊號S1，並藉由該程式控制器111 傳送至該質量流量控制器120 ;如第4B圖所示，該調節訊 號S2係包含一第一充氣速率設定值vl及一第二充氣速率 設定值v2;其中，該第一充氣速率設定值vl係用於控制該 質量流量控制器120以使氣體的流量值於一第一時間值tl ^ 内線性增加到該設定流量值m，並可穩定維持該設定流量 值m於一第三時間值t3的期間，該第二充氣速率設定值 v2係用於控制該質量流量控制器120以使氣體的流量值於 一第二時間值t2内自該設定流量值m線性降至零；據此， 該主控電腦設備110係依據該設定流量值m與該調節訊號 S2之第一充氣速率設定值vl及第二充氣速率設定值v2進 行計算，以產生該目標流量訊號S1並傳送至該質量流量控 • 制器120,使該質量流量控制器120控制氣體流量於該第一 時間tl内以第一預定斜率（流量與時間的關係）增加以及於 第二時間t2内以第二預定斜率（流量與時間的關係）降低， 其中，該第一預定斜率與該第二預定斜率係可依據實際需 要採用相同或不同之斜率關係。 在習知技術以機械式流量計30及壓力計40配合控制 閥20的氣體流量控制方式中（第1圖），如第4A圖所示， 氣體流量的變化無法連續且線性地控制，當於控制閥20開 啟而開始充氣於晶圓載具200時，氣體流量係瞬間增加而 7 M440455 導致晶圓載具200内部的氣流產生劇烈變化，造成晶圓載 具200内已沉澱或漂浮中的微粒或其他粉塵被劇烈擾動 著，進而造成大量飛揚的微粒污染晶圓；因此，本創作係 可藉由該質量流量控制器120調整電控閥門之大小來精準 控制氣體流量變化，而可在填充氣體之初始及結束的特定 時間内，使晶圓載具200内部之氣體流量變化量可如第4B 圖所示之連續而線性地增加及降低，並可形成穩定之流 場，以避免晶圓載具200内部之氣體流量瞬間增加而導致 ^ 氣流劇烈變化的情形，進而防止該晶圓載具200内部的微 粒或粉塵被氣流擾動而揚起導致晶圓的汙染。 請再參照第2圖及第3圖，於本創作另一較佳實施例 中，該質量流量控制器120更可包含用於偵測該充氣管路 30内氣體的流量的功能，以產生一實際流量訊號S3，該實 際流量訊號S3係可透過該程式控制器111傳遞至該主控電 腦設備110中以紀錄之，藉此保存當批晶圓於製程期間之 φ 資訊；並且，該實際流量訊號S3所代表的資訊係可顯示於 質量流量控制器120或該主控電腦設備110之顯示螢幕， 有助於操作人員監控製程期間的晶圓載具200之狀況；此 外，該主控電腦設備110亦可儲存該設定流量值m、目標 流量訊號S1、調節訊號S2或實際流量訊號S3等資訊，以 利於生產過程之品管及監控。 綜合上述，本創作改善了習知技術中必須人為操控而 無法快速調整氣體流量以及無法準確判讀充氣管路内氣體 流量等缺點，而可藉由數位式之質量流量控制器控制填充 8 M440455 至:圓載具内之氣體的流量，而可達成準確及快速的氣體 流量控制。 ' — 〜本創作在上文中已以較佳實施例揭露，然熟習本項 術者應理解的是，該實施例僅用於描繪本創作，而不應 讀為限制本創作之範圍。應注意的是，舉凡與該實_# 效之變化與置換’均應設為涵蓋於本創作之範相。因此， 本創作之賴範圍當以申請專利範圍所界定者為準。 【圖式簡單說明】 =1圖為習知氣體填充系統應用於晶圓載具的示意圖。 能方^圖為本創作於—實施例中數位流量控_之功 用於圖實施例中數位流量控制裝置應 係為氣;r的示意圖；第4B圖 平乂佳貫轭例之充氣速率的示意圖。 【主要元件符號說明】 10 氣體供應器 2〇,2〇’控制閥 30 40 50 充氣管路 機械式流量計 壓力計 出氣管路 9 60 M44G455 70 抽氣幫浦 100 數位流量控制裝置 110 主控電腦設備 111 程式控制器 120 質量流量控制器 200 晶圓載具 SI 目標流量訊號 S2 調節訊號 S3 實際流量訊號 m 設定流量值 vl 第一充氣速率設定值 v2 第二充氣速率設定值 tl 第一時間值 t2 第二時間 t3 第三時間值Logic ^ntroller, PLC) 'The master computer device n〇 is used to receive the value of the set stream, if the user enters the value into the master computer device) to generate the target and the message The program controller 1U transmits; as shown in FIG. 3, the quality, &"丨L Summer Flow Controller 120 is installed in the delivery gas to the program control g: The mass flow line 30 is controlled on the inner gas line 30 and according to the electrical connection of the surface (4) 11 120 with 3, 19 Π ^ ^ ^ target flow signal S1 to control the mass flow control to achieve accurate 3 doors to adjust the charge 4^ The flow rate of gas in 3() 'The mass flow: automatic digital flow control. The flow rate of the body flow includes (4) the gas in the gas line 30. Specifically, the production: the mechanism has an electric control valve for regulating the gas flow rate; the amount of contact mode == should be __ such as the non-connecting valve for sensing the temperature difference of the fluid Or a piezoelectric suppression device; the electronically controlled valve is, for example, an electromagnetic control controller. When the f-quantity flow controller 12G receives the target flow signal S1 according to the controller 120, the quality is The flow control is small, and the flow signal si is used to control the gas flow of the electric control valve 120. The gas flow control is performed on the gas line 30 through the mass flow control/;η·里' to achieve automatic digital flow control. 6 M440455 Please refer to FIG. 2 and FIG. 4B together. In a preferred embodiment of the present invention, the main control computer device 110 is further configured to provide an adjustment signal S2, so that the main control computer device 110 is based on The set flow value m and the adjustment signal S2 generate the target flow signal S1, and is transmitted to the mass flow controller 120 by the program controller 111; as shown in FIG. 4B, the adjustment signal S2 includes a first The inflation rate set value v1 and a second inflation rate set value v2; wherein the first inflation rate set value v1 is used to control the mass flow controller 120 such that the flow rate value of the gas is within a first time value tl ^ Increased to the set flow value m, and can stably maintain the set flow value m during a third time value t3, the second inflation rate set value v2 is used to control the mass flow controller 120 to make the gas The flow rate value linearly decreases from the set flow rate value m to zero in a second time value t2; accordingly, the master computer device 110 is based on the set flow rate value m and the first inflation rate setting value v1 of the adjustment signal S2. And the second inflation rate setting V2 performs a calculation to generate the target flow signal S1 and transmits to the mass flow controller 120, so that the mass flow controller 120 controls the gas flow rate within the first time t1 to a first predetermined slope (flow and time) The relationship is increased and decreased by a second predetermined slope (flow versus time) during the second time t2, wherein the first predetermined slope and the second predetermined slope may be the same or different slope relationships depending on actual needs. In the conventional gas flow control method in which the mechanical flow meter 30 and the pressure gauge 40 are combined with the control valve 20 (Fig. 1), as shown in Fig. 4A, the change in the gas flow rate cannot be continuously and linearly controlled. When the control valve 20 is opened and begins to inflate on the wafer carrier 200, the gas flow rate is instantaneously increased and the 7 M440455 causes a dramatic change in the airflow inside the wafer carrier 200, causing particles or other dust that has settled or floated in the wafer carrier 200. Being violently disturbed, causing a large amount of flying particles to contaminate the wafer; therefore, the present invention can adjust the size of the electronically controlled valve by the mass flow controller 120 to accurately control the gas flow change, and at the initial stage of filling the gas During a certain period of time, the amount of change in the gas flow rate inside the wafer carrier 200 can be continuously and linearly increased and decreased as shown in FIG. 4B, and a stable flow field can be formed to avoid gas inside the wafer carrier 200. The instantaneous increase of the flow rate causes the airflow to change drastically, thereby preventing the particles or dust inside the wafer carrier 200 from being disturbed by the airflow and causing the air carrier to be lifted. Pollution round. Referring to FIG. 2 and FIG. 3 again, in another preferred embodiment of the present invention, the mass flow controller 120 further includes a function for detecting the flow rate of the gas in the inflation line 30 to generate a The actual traffic signal S3, the actual traffic signal S3 can be transmitted to the master computer device 110 through the program controller 111 for recording, thereby storing the φ information of the batch wafer during the process; and the actual traffic The information represented by the signal S3 can be displayed on the display screen of the mass flow controller 120 or the host computer device 110, which helps the operator to monitor the condition of the wafer carrier 200 during the process; in addition, the master computer device 110 The set flow value m, the target flow signal S1, the adjustment signal S2 or the actual flow signal S3 can also be stored to facilitate quality control and monitoring of the production process. In summary, the present invention improves the shortcomings of the prior art that it is necessary to manually manipulate the gas flow rate and cannot accurately interpret the gas flow rate in the gas line, and the digital mass flow controller can be used to control the filling of 8 M440455 to: Accurate and fast gas flow control is achieved by the flow of gas within the round carrier. The present invention has been disclosed in the above preferred embodiments, and it should be understood by those skilled in the art that the present invention is only intended to depict the present invention and is not intended to limit the scope of the present invention. It should be noted that both the change and the replacement of the actual _# effect should be set to cover the scope of this creation. Therefore, the scope of this creation is subject to the definition of the scope of patent application. [Simple description of the figure] =1 Figure is a schematic diagram of a conventional gas filling system applied to a wafer carrier. The energy level diagram is the work of the digital flow control in the embodiment. The figure is used in the embodiment. The digital flow control device should be a gas; the schematic diagram of r; the 4B diagram is a schematic diagram of the inflation rate of the yoke example. . [Main component symbol description] 10 gas supply 2〇, 2〇' control valve 30 40 50 Inflatable pipe mechanical flowmeter pressure gauge outlet pipe 9 60 M44G455 70 pumping pump 100 digital flow control device 110 main control computer Device 111 Program Controller 120 Mass Flow Controller 200 Wafer Carrier SI Target Flow Signal S2 Adjustment Signal S3 Actual Flow Signal m Set Flow Value vl First Inflation Rate Set Value v2 Second Inflation Rate Set Value tl First Time Value t2 Second time t3 third time value