M439257 五、新型說明： 【新型所屬之技術領域】 本創作有關於-種包覆結構，尤其是指—種用於包 覆光電元件的基材包覆結構。 【先前技術】M439257 V. New description: [New technical field] This creation has a kind of covering structure, especially a substrate covering structure for coating photovoltaic elements. [Prior Art]
在半導體或發光二極體的後段製程中，晶圓在掣造 完成之後會被黏貼到膜狀結構上，再切割成數個晶粒， 这些晶粒維持著貼附在膜狀結構上的形式，#下來會送 入檢測設備之中。_設制該些晶粒進行檢驗測試， 並且依其等級做分類，之後該些晶__於膜狀結構 上’以避免晶粒因滾動而移位或受損 構上貼附保護膜，以保護該些晶粒。 H …、、而，由於習知技術的保護膜會塗佈化學物質，以 護膜與膜狀結構進行_。然而，保護膜塗佈化 于貝，會在覆盍於該些晶粒上時，殘留化學物質於該 些晶粒上，而造成之後進行的後段製程其良率下降。因 此，克服化學物質朗的問題，將成為提升該 率的重要因素。 ~ 【新型内容】 本創作的基材包覆結構為改善化學物質殘留的問 碭’因此改變保護膜的材料。由於保護膜上不另 化學物質，可減少化學物質 段製程的良率。子物質殘留的問通’可有效提升後 、本創作提供-種基材包覆結構，其包括―基材、一 黏者層及至少―絕緣層。基材軸於光電元件 心層上，、姆層接合於光電元件㈣層上，且絕緣層 3/1〇 M439257 覆蓋基材。另外，絕緣層的面積是大於光電元件黏著層 的面積。 本創作提供一種基材包覆結構，其包括一基材、一 光電元件黏著層、一離型層及一抗靜電層。基材黏附於 光電元件黏著層上，離型層接合於光電元件黏著層上。 抗靜電層透過離型層與光電元件黏著層接合，抗靜電層 的面積大於光電元件黏著層的面積。 綜上所述，本創作的基材包覆結構具有好的抗靜電 及保護之功效，以及方便將絕緣層從光電元件黏著層上 進行剝離。並且，不會產生殘留物於發光二極體晶粒 上，因此後段的封裝打線(Wire-bonding)的製程良率可以 提升。 為使能更進一步瞭解本創作之特徵及技術内容，請 參閱以下有關本創作之詳細說明與附圖，然而所附圖式 僅提供參考與說明用，並非用來對本創作加以限制者。 【實施方式】 請參考圖1及圖2所示，本創作提供一種基材包覆 結構1，其包括一基材10、一光電元件黏著層20及至 少一絕緣層3 0。 首先，光電元件黏著層20具有黏性，可將基材10 黏附於光電元件黏著層20上。如圖1所示，基材10可 為片狀的形式，因此基材10可為藍寶石晶圓、半導體 晶圓、單晶石夕晶圓、多晶石夕晶圓或太陽能電池面板。如 圖2所示，基材10可為塊狀的形式，因此基材10可為 發光二極體晶粒或晶片，然而基材10的元件不以上述 為限。另外，光電元件黏著層20可為膠膜本體、藍膜 4/10 M439257 (Blue tape)本體或uv臈本體，然而光電 的材質不以上述為限。 件黏考層20 在本實施例中是將發光二極體晶狀 或藍膜本體上’透過膠膜本體或藍膜本體本=:體 將發光7極體晶粒黏附於勝膜本體或藍膜本體上:， 之後，再將絕緣層30蓋附於光電元件 上，亦即絕緣層30是為接合於光電元件點著層二2〇 並且’絕緣層30充份覆蓋於基材10上，以達曰 其In the back-end process of a semiconductor or a light-emitting diode, the wafer is adhered to the film structure after the fabrication is completed, and then cut into a plurality of crystal grains, and the crystal grains are maintained in a form attached to the film structure. #下 will be sent to the testing equipment. _ Configuring the dies for inspection testing, and classifying them according to their grades, after which the granules are on the membranous structure to avoid the grains being displaced or damaged by rolling, and the protective film is attached. Protect the grains. H ..., and, because the protective film of the prior art is coated with a chemical substance, the film and the film structure are carried out. However, the protective film is coated on the shell, and when it is coated on the crystal grains, residual chemicals are deposited on the crystal grains, resulting in a decrease in yield in the subsequent stage process. Therefore, overcoming the problem of chemical substances will become an important factor in increasing the rate. ~ [New content] The substrate coating structure of this creation is to improve the chemical substance residue, thus changing the material of the protective film. Since there is no chemical on the protective film, the yield of the chemical process can be reduced. The problem of the residue of the sub-substance can be effectively enhanced, and the present invention provides a substrate-clad structure comprising a substrate, a layer of adhesive and at least an insulating layer. The substrate axis is on the core layer of the photovoltaic element, the layer of the layer is bonded to the layer of the photovoltaic element (4), and the insulating layer 3/1 〇 M439257 covers the substrate. Further, the area of the insulating layer is larger than the area of the adhesion layer of the photovoltaic element. The present invention provides a substrate covering structure comprising a substrate, a photovoltaic element adhesive layer, a release layer and an antistatic layer. The substrate is adhered to the adhesion layer of the photovoltaic element, and the release layer is bonded to the adhesion layer of the photovoltaic element. The antistatic layer is bonded to the photovoltaic element adhesive layer through the release layer, and the area of the antistatic layer is larger than the area of the photovoltaic element adhesion layer. In summary, the substrate coating structure of the present invention has good antistatic and protective effects, and facilitates the peeling of the insulating layer from the adhesive layer of the photovoltaic element. Moreover, no residue is generated on the light-emitting diode die, so the process yield of the subsequent wire-bonding can be improved. In order to further understand the features and technical contents of the present invention, please refer to the following detailed description and drawings of the present invention. However, the drawings are only for reference and explanation, and are not intended to limit the creation. [Embodiment] Referring to Figures 1 and 2, the present invention provides a substrate covering structure 1 comprising a substrate 10, a photovoltaic element adhesive layer 20 and at least one insulating layer 30. First, the photovoltaic element adhesive layer 20 has adhesiveness, and the substrate 10 can be adhered to the photovoltaic element adhesive layer 20. As shown in Fig. 1, the substrate 10 can be in the form of a sheet, and thus the substrate 10 can be a sapphire wafer, a semiconductor wafer, a single crystal wafer, a polycrystalline wafer or a solar panel. As shown in Fig. 2, the substrate 10 may be in the form of a block, and thus the substrate 10 may be a light-emitting diode die or wafer, however the components of the substrate 10 are not limited to the above. In addition, the photovoltaic element adhesive layer 20 may be a film body, a blue film 4/10 M439257 (Blue tape) body or a uv臈 body, but the material of the photoelectric is not limited to the above. In this embodiment, the adhesion test layer 20 is to adhere the light-emitting diode body or the blue film body to the crystal film body or the blue film body. On the film body:, then, the insulating layer 30 is attached to the photovoltaic element, that is, the insulating layer 30 is bonded to the photovoltaic element to layer 2 2 and the insulating layer 30 is fully covered on the substrate 10, Daqiqi
材10以及抗靜電的效果。 ’、°蔓基Material 10 and antistatic effect. ‘,° 蔓基
其中’絕緣層3G的面積S大於光電元件黏著層Μ 的面積，方便將絕緣層30從光電元件黏著層2〇上^行 剝離。如圖3所示，絕緣層3〇,31也可設計為兩層結才冓订 亦即於絕緣層30上可再增加絕緣層31而形成兩層結 構，達到更好的抗靜電及保護之功效。然而絕緣層3〇 也可設計為多層結構，並不限定絕緣層3〇的層數。其 中’絕緣層30的材質可為聚乙烯(Polyethylene)、聚丙 烯（Polypropylene)、聚氯乙烯(Poly Vinyl Chloride)、乙烯 -醋酸乙稀脂共聚物(Ethylene Vinyl Acetate)、聚對苯二 曱酸醋（Polyethylene Terephthalate)、聚乙烯醇(Polyvinyl alcohol)、聚乙烯醇縮丁搭(Polyvinyl butyral)或曱基戊稀 聚合物（TPX)，然而絕緣層30的材質不以上述為限。 除此之外，可在絕緣層30上選擇性塗佈離型劑本 體，離型劑本體可為矽利康（silicone)離型劑本體或非矽 利康離型劑本體。或是離型劑本體為一種無溶劑形式， 其可為加熱硬化之離型劑本體或放射線硬化之離型劑 本體，加熱硬化之離型劑本體可經由加熱而產生硬化的 5/10 政果，放射線硬化之離型劑本體可經由紫外光照射而產 生硬化的效果。另外，將放射線硬化之離型劑本體塗佈 ^緣層30上’可方便用於觀察晶粒。並且使用放射 ，石更化的方式，不會有離型劑移行(migrati〇n)且殘留於 =缸上的問題’因此後段的封震打線(wh>e_b()nding)的製 程良率可以提升。 明參考圖4所不，絕緣層30的表面亦可形成凹陷 :32,凹陷區32將於該絕緣層％的表面形成紋路，其 的在於減少與光電树黏著層2()接觸的面積，以便 乂。巴緣層30從光電疋件|占著層2〇上進行剝離。且黏 2所產生的氣，泡，氣體可從凹陷區32之t排出，以 、，隹待絕緣層30的平整性。 請參考圖5所示 1 ’其包括一基材1〇、 50及一抗靜電層40。 本創作另提供一種基材包覆結構 一光電元件黏著層20、一離型層 黏附：㈣光電疋件黏著層2〇具有黏性，可將基材1 塊狀的形式，因此其二 然而基材10可為片狀1 石曰门 土材10可為發光二極體晶粒、藍1 =面Π體晶圓、單晶石夕晶圓、多晶糊^ 另二：I然而基材Μ的元件不以上述為限 UV膜本體^件細層2G可為膠財體、藍膜本體; 限膜本體’然而光電元件黏著層20的材質不以上心 在本貫施例中是將發朵_ 膜上，極體晶粒置於勝膜或藍 黏附於膠膜或藍的錄’將發光二極體晶粒 6/10 M439257 之後，再將離型層50及抗靜電層40蓋附於光電元 件黏著層20上，亦即離型層50接合於光電元件黏著層 20上，因此抗靜電層40透過離型層50與光電元件黏著 層20進行接合，並且抗靜電層40的面積大於光電元件 黏著層20的面積，方便將抗靜電層40從光電元件黏著 層20上進行剝離。其中，抗靜電層40為離型紙本體。 請參考圖6所示，離型層50以及抗靜電層40的表 面可為凹凸的形狀，其目的在於減少與光電元件黏著層 20接觸的面積，以便於將抗靜電層40及離型層50從光 電元件黏著層20上進行剝離。且黏合時所產生的氣泡， 氣體可從凹凸的形狀之中排出，以維持抗靜電層40的 平整性。 綜上所述，本創作的基材包覆結構具有好的抗靜電 及保護之功效，以及方便將絕緣層從光電元件黏著層上 進行剝離。並且，不會產生殘留物於發光二極體晶粒 上，因此後段的封裝打線(Wire-bonding)的製程良率可以 提升。 惟以上所述僅為本創作之較佳實施例，非意欲侷限 本創作的專利保護範圍，故舉凡運用本創作說明書及圖 式内容所為的等效變化，均同理皆包含於本創作的權利 保護範圍内，合予陳明。 【圖式簡單說明】 圖1為本創作之基材包覆結構第一實施例的片狀基材的 立體不意圖。 圖2為本創作之基材包覆結構第一實施例的塊狀基材的 立體示意圖。 7/10 M4J9257 立體作之基材包覆結構第-實施例的兩層絕緣層 圖。為本創作之基材包覆結構第一實施例的剖面示意 =5為本創作之基材包覆結構第二實施例的立體示意 圖0 圖6為本創作之基材包覆結構第二實施例的剖面示意 圖0 【主要元件符號說明】 基材包覆結構 1 基材 10 光電元件黏著層 20 絕緣層 30,31 凹陷區 32 抗靜電層 40 離型層 50 8/1〇Wherein the area S of the insulating layer 3G is larger than the area of the photovoltaic element adhesive layer ,, and the insulating layer 30 is easily peeled off from the photovoltaic element adhesive layer 2 . As shown in FIG. 3, the insulating layer 3, 31 can also be designed as a two-layer junction, that is, the insulating layer 31 can be further added to the insulating layer 30 to form a two-layer structure, thereby achieving better antistatic and protection. efficacy. However, the insulating layer 3 can also be designed as a multilayer structure without limiting the number of layers of the insulating layer 3〇. The material of the insulating layer 30 may be Polyethylene, Polypropylene, Poly Vinyl Chloride, Ethylene Vinyl Acetate, Poly(terephthalic acid). Polyethylene Terephthalate, Polyvinyl alcohol, Polyvinyl butyral or decyl pentylene polymer (TPX), however, the material of the insulating layer 30 is not limited to the above. In addition, the release agent body may be selectively coated on the insulating layer 30, and the release agent body may be a silicone release agent body or a non-Likon release agent body. Or the release agent body is in a solvent-free form, which may be a heat-hardening release agent body or a radiation-hardening release agent body, and the heat-hardening release agent body may be hardened by heating. The radiation hardening release agent body can be hardened by irradiation with ultraviolet light. Further, coating the radiation-cured release agent body onto the edge layer 30 can be conveniently used for observing crystal grains. And using the method of radiation and stone, there is no problem that the release agent moves and remains on the cylinder. Therefore, the process yield of the rear shock line (wh>e_b()nding can be Upgrade. Referring to FIG. 4, the surface of the insulating layer 30 may also form a recess: 32. The recessed region 32 will form a grain on the surface of the insulating layer, which is to reduce the area of contact with the photovoltaic tree adhesion layer 2 ( Hey. The rim layer 30 is peeled off from the photovoltaic element| The gas, bubbles, and gas generated by the adhesive 2 can be discharged from the recessed portion 32 to ensure the flatness of the insulating layer 30. Please refer to FIG. 5, which includes a substrate 1 , 50 and an antistatic layer 40. The present invention further provides a substrate covering structure, a photovoltaic element adhesive layer 20, and a release layer adhesion: (4) the photoelectric element adhesive layer 2 is adhesive, and the substrate can be in the form of a block, so The material 10 can be a sheet 1 stone door soil material 10 can be a light emitting diode grain, a blue 1 = a facet wafer, a single crystal stone wafer, a polycrystalline paste ^ another two: I, however, a substrate The components of the UV film body are not limited to the above. The fine layer 2G can be a plastic body or a blue film body; the film-limiting body is however, the material of the photovoltaic element adhesive layer 20 is not superimposed in the present embodiment. _ On the film, after the polar crystal is placed on the film or the blue is adhered to the film or the blue film is printed, the light-emitting diode crystal is 6/10 M439257, and then the release layer 50 and the antistatic layer 40 are attached. The photovoltaic element adhesive layer 20, that is, the release layer 50 is bonded to the photovoltaic element adhesive layer 20, so that the antistatic layer 40 is bonded to the photovoltaic element adhesive layer 20 through the release layer 50, and the area of the antistatic layer 40 is larger than that of the photoelectric layer. The area of the component adhesive layer 20 facilitates the peeling of the antistatic layer 40 from the photovoltaic element adhesive layer 20. The antistatic layer 40 is a release paper body. Referring to FIG. 6, the surface of the release layer 50 and the antistatic layer 40 may have a concave-convex shape for the purpose of reducing the area of contact with the photovoltaic element adhesion layer 20, so as to facilitate the antistatic layer 40 and the release layer 50. Peeling is performed from the photovoltaic element adhesive layer 20. Further, the bubbles generated at the time of bonding can be discharged from the shape of the concavities and convexities to maintain the flatness of the antistatic layer 40. In summary, the substrate coating structure of the present invention has good antistatic and protective effects, and facilitates the peeling of the insulating layer from the adhesive layer of the photovoltaic element. Moreover, no residue is generated on the light-emitting diode die, so the process yield of the subsequent wire-bonding can be improved. However, the above description is only the preferred embodiment of the present invention, and it is not intended to limit the scope of patent protection of this creation. Therefore, the equivalent changes made by using this creation specification and the contents of the schema are all included in the right of this creation. Within the scope of protection, it is given to Chen Ming. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view of a sheet-like substrate of a first embodiment of the substrate coating structure of the present invention. Fig. 2 is a perspective view showing the bulk substrate of the first embodiment of the substrate coating structure of the present invention. 7/10 M4J9257 Three-layer insulating layer of the substrate-clad structure of the third embodiment. The cross-sectional view of the first embodiment of the substrate coating structure of the present invention is a schematic view of the second embodiment of the substrate coating structure of the present invention. FIG. 6 is a second embodiment of the substrate covering structure of the present invention. Schematic diagram of section 0 [Description of main components] Substrate cladding structure 1 Substrate 10 Photoelectric component adhesion layer 20 Insulation layer 30, 31 Depression area 32 Antistatic layer 40 Release layer 50 8/1〇