101年06月07日梭正替換頁 M439175 五、新型說明： 【新型所屬之技術領域】 [0001] 本創作有關於一種半導體元件檢驗機，使得影像擷 取單元可同時對待測晶片或晶圓的表面及側邊進行影像 擷取。 【先前技術】 [0002] 晶片或晶圓等半導體元件在製造的過程中，往往會On June 07, 101, Shuttle is replacing page M439175. V. New description: [New technology field] [0001] This work is about a semiconductor component inspection machine that allows the image capture unit to simultaneously measure wafers or wafers. Image capture on the surface and sides. [Prior Art] [0002] Semiconductor components such as wafers or wafers are often used in the manufacturing process.
伴隨有缺陷或污點的產生，且晶片或晶圓上的缺陷或污 點往往會對後續產品的良率造成影響。因此在完成晶片 或晶圓的製作後，通常會進一步對晶片或晶圓進行檢測 *以確定晶片或晶圓符合相關的要求。 [0003] 請參閱第1圖，為習用晶片檢測裝置之構造示意圖 。如圖所示，習用之晶片檢測裝置10主要包括有一承載 座11及一影像擷取單元13，其中承載座11可用以承載一 待測的晶片12，並以影像擷取單元13對承載座11上之待 測晶片12的上表面121進行影像擷取。 [0004] 影像擷取單元13可為感光耦合元件（CCD)，可將晶片 12的影像儲存成為一數位影像資料，並可進一步對影像 擷取單元13所擷取的數位影像資料進行分析及比對。在 實際應用時可將擷取之晶片12的數位影像資料與目標晶 片影像資料進行比對，並得知待測晶片12與目標晶片之 間的尺寸差異，藉此以得知待測晶片12是否符合產品要 求。 [0005] 除此之外，亦可進一步對擷取之晶片12的數位影像 10022332^^^ A〇101 第3頁/共18頁 1013215108-0 M439175 101年06月07日修正替換頁 資料進行其他的桧測，例如可由晶片12的數位影像資料 得知待測晶片12上是否有污點的存在，藉此以判斷待測 晶片12的品質。然而以上述之晶片檢測裝置10對晶片12 進行檢測還是存在有部分的缺失，使得晶片12檢測的結 果無法符合使用者的要求。 [0006] [0007] [0008] 【新型内容】 本創作之一目的，在於提供一種半導體元件檢驗機 ，主要於待測區的周圍設置有至少一反射單元，使得影 像擷取單元在擷取晶片或晶圓之表面影像的同時，亦可 透過反射單元擷取晶片或晶圓之側邊的影像，藉此將有 利於提高晶片或晶圓檢測的準確性。 本創作之又一目的，在於提供一種半導體元件檢驗 機，透過至少一反射單元的設置，將可在不增加額外之 檢測步驟的前提之下，對晶片或晶圓的表面及側邊進行 檢測*措此以提南晶片或晶圓之檢測的效率。 本創作之又一目的，在於提供一種半導體元件檢驗 機，主要於待測區的周圍設置有至少一發光單元，可用 以將光源投射在待測區内之晶片或晶圓的側邊，籍此將 更有利於以影像擷取單元擷取晶片或晶圓之側邊的影像Defects or stains are accompanied, and defects or stains on the wafer or wafer tend to affect the yield of subsequent products. Therefore, after the fabrication of the wafer or wafer is completed, the wafer or wafer is typically further inspected to determine that the wafer or wafer meets the relevant requirements. [0003] Please refer to FIG. 1 , which is a schematic structural view of a conventional wafer detecting device. As shown in the figure, the conventional wafer detecting device 10 mainly includes a carrier 11 and an image capturing unit 13 , wherein the carrier 11 can be used to carry a wafer 12 to be tested, and the image capturing unit 13 is used to support the carrier 11 . The upper surface 121 of the wafer 12 to be tested is image-captured. The image capturing unit 13 can be a photosensitive coupling element (CCD), and can store the image of the wafer 12 into a digital image data, and further analyze and compare the digital image data captured by the image capturing unit 13 Correct. In actual application, the digital image data of the captured wafer 12 can be compared with the target wafer image data, and the difference in size between the wafer 12 to be tested and the target wafer is known, thereby knowing whether the wafer 12 to be tested is Meet product requirements. [0005] In addition, the digital image of the captured wafer 12 can be further processed. 10022332^^^ A〇101 Page 3/18 pages 1013215108-0 M439175 Correction of the replacement page data of June 7, 101 For example, the presence or absence of a stain on the wafer 12 to be tested can be obtained from the digital image data of the wafer 12, thereby determining the quality of the wafer 12 to be tested. However, there is still a partial absence of the wafer 12 inspection by the wafer inspection apparatus 10 described above, so that the result of the wafer 12 inspection does not meet the requirements of the user. [0006] [0008] [New content] One object of the present invention is to provide a semiconductor component inspection machine, which is mainly provided with at least one reflection unit around the area to be tested, so that the image capturing unit is drawing the wafer. At the same time as the surface image of the wafer, the image of the side of the wafer or the wafer can also be captured through the reflective unit, thereby facilitating the improvement of the accuracy of the wafer or wafer inspection. Another object of the present invention is to provide a semiconductor component inspection machine that can detect the surface and side of a wafer or wafer without adding an additional detection step through the arrangement of at least one reflection unit. This is the efficiency of the detection of the wafer or wafer. A further object of the present invention is to provide a semiconductor component inspection machine, which is mainly provided with at least one light emitting unit around the area to be tested, which can be used to project a light source on the side of a wafer or a wafer in a region to be tested. It will be more advantageous to capture the image of the side of the wafer or wafer by the image capturing unit.
[0009] 本創作之又一目的，在於提供一種半導體元件檢驗 機，主要將至少一反射單元設置於輸送單元的周圍，藉 此將可在輸送晶片或晶圓的過程當中，對晶片或晶圓的 表面及側邊進行檢測。 臟233#單编號删1 第4頁/共18頁 1013215108-0 M439175 [0010] 101年.06月07日接正替換頁 為達上述目的，本創作提供一種半導體元件檢驗機 ，包括有：一輸送單元，用以進行至少一晶片或至少一 晶圓的輸送，且輸送單元包括有一檢測區；一影像擷取 單元，位於輸送單元的上方，並用以對位於檢測區内之 晶片或晶圓的表面進行影像擷取；及至少一反射單元， 位於輸送單元的周圍，其中影像擷取單元透過反射單元 擷取晶片或晶圓之側邊的影像。 [0011] 本創作還提供另一種半導體元件檢驗機，包括有： 一承載座，用以承載至少一晶片或至少一晶圓；一影像 擷取單元，位於承載座的上方，並用以對晶片或晶圓的 表面進行影像擷取；及至少一反射單元，位於承載座的 周圍，其中影像擷取單元透過反射單元擷取晶片或晶圓 之側邊的影像。 [0012] 上述半導體元件檢驗機的一實施例，其中晶片或晶 圓的外觀為任意的幾何形狀或近似圓形，而反射單元則 形成與晶片或晶圓之形狀相似的壞狀構造。 [0013] 上述半導體元件檢驗機的一實施例，包括有至少一 發光單元用以將光源投射在晶片或晶圓的側邊。 [0014] 上述半導體元件檢驗機的一實施例，其中發光單元 位於輸送單元之檢測區的周圍。 [0015] 上述半導體元件檢驗機的一實施例，其中發光單元 的數量與反射單元的數量相同。 [0016] 上述半導體元件檢驗機的一實施例，其中晶片或晶 圓包括有複數個側邊，且反射單元的數量與晶片或晶圓 10022332#單編號 A〇101 第5頁/共18頁 1013215108-0 M439175 [0017] [0018] [0019] [0020] [0021] 101年06月07日核正替换頁 之側邊的數量相同。 上述半導體元件檢驗機的一實施例，其中反射單元 位於輸送單元之檢測區的周圍。 c 【實施方式】 請參閱第2圖，為本創作半導體元件檢驗機一實施 例的構造示意圖。如圖所示，半導體元件檢驗機20主要 包括有一承載座21、一影像擷取單元23及至少一反射單 元25，其中承載座21可用以承載至少一晶片或至少一晶 圓等半導體元件22，並以影像擷取單元23對待測的晶片 · 或晶圓22進行擷取影像。 承載座21的部分區域可被定義成為一檢測區211，而 影像擷取單元23則被設置在承載座21的上方，以利於擷 取待測之晶片或晶圓22的影像，其中本創作所述之影像 操取單元23可為電荷竊合元件（Charge-coupled Device，CCD)或者是互補式金屬氧化物半導體 (Complementary Metal-Oxide-Seraiconductor ， CMOS) 。 · 在本創作一較佳實施例中，影像擷取單元23位於承 · 載座21之檢測區211上方，並用以對放置在承載座21之檢 測區211内的待測晶片或晶圓22進行影像擷取，例如對晶 片或晶圓22的表面（上表面或下表面）221進行影像的擷取 ，並形成一晶片或晶圓22的數位影像資料。 此外，亦可進一步對待測晶片或晶圓22之表面221的 數位影像資料進行分析及比對，以得知待測晶片或晶圓 10022332#單编號 A〇101 第6頁/共18頁 1013215108-0 M439175 / 101年.06月0>日修正替换頁 22之表面221的品質。例如可將晶片或晶圓22的數位影像 資料與目標晶片或晶圓的影像資料進行比對，以得知待 測晶片或晶圓22與目標晶片或晶圓之間的尺寸差異，藉 此以得知待測晶片或晶圓22是否符合產品要求，當然亦 可由數位影像資料，得知晶片或晶圓22表面是否有污點 或結構上的缺陷。 [0022] 承載座21的周圍設置有一個或多個反射單元25，例 如可將反射單元25設置在承載座21之檢測區211的周圍。 當待測晶片或晶圓22位於檢測區211時，影像擷取單元23 將可以透過反射單元25對晶片或晶圓22的側邊（側表面 )223進行影像的擷取，如第3圖所示。 [0023] 透過影像擷取單元23對晶片或晶圓22的側邊22 3進行 影像擷取，將可對晶片或晶圓22的側邊223進行檢測，更 可進一步檢測出晶片或晶圓22之表面221與側邊223之交 界處是否有髒污或結構上的缺陷，藉此將可提高晶片或 晶圓22之檢測的準確度，並可依據檢測的結果對晶片或 晶圓2 2進行分類8 [0024] 在實際應用反射單元25具有角度調整的功能，使用 者可調整反射單元25的角度，以使得晶片或晶圓22之側 邊223散射的光源投射至反射單元25，並透過反射單元25 將散射的光源投射到影像擷取單元23，使得影像擷取單 元23可對晶片或晶圓22的侧邊223進行影像擷取。在不同 實施例中，反射單元25與晶片或晶圓22及/或影像擷取單 元23之間的相對位置亦為可調整。透過可調整角度及位 置之反射單元25的設置，可使得半導體元件檢驗機20適 1013215108-0 10022332^^^51 A0101 * 7 1 7 ^ 18 1 M439175 用於各種不同尺寸的晶片或晶圓22。 101年06月07日按正替换頁 [0025] [0026] 在本創作一較佳實施例中，晶片或晶圓22包括有複 數個側邊223，而反射單元25的數量則與晶片或晶圓22之 侧邊223的數量相同。此外，晶片或晶圓22的外觀可為任 意的幾何形狀，而複數個反射單元25則形成與晶片或晶 圓22之形狀相似的環狀構造，並設置於檢測區211周圍。 如本創作第2圖所示之晶片或晶圓22為四邊形並包 括有四個側邊223，反射單元25的數量亦為四個，並形成 一近似四邊形的還狀構造，且環設於檢測區211周圍。各 個反射單元25可分別將晶片或晶圓22之各個側邊223的影 像投射至影像擷取單元23，藉此影像擷取單元23將可同 時取得待測晶片或晶圓22之表面221及各個側邊223的影 像。 [0027] [0028] [0029] 在不同實施例中，反射單元25的數量可隨著待測晶 片或晶圓22之邊長的數量進行調整。此外，若晶片或晶 圓22的形狀近似圓形，則可將一個或多個反射單元25製 作成圓形的環狀構造，並環設於晶片或晶圓22的周圍。 請參閱第4圖，為本創作半導體元件檢驗機又一實 施例的構造示意圖。如圖所示，本創作所述之半導體元 件檢驗機30主要包括有一輸送單元31、一影像擷取單元 23及至少一反射單元25，其中輸送單元31可用以進行一 個或多個晶片或晶圓22的輸送，而影像擷取單元23則可 用以對輸送單元31上的晶片或晶圓22進行影像擷取。 輸送單元31的部分區域可被定義成為一檢測區311， 觀皿^單编號A0101 第8頁/共18頁 1013215108-0 M439175 101年06月07日修正替換頁 而影像擷取單元23則被設置在輸送單元31的上方，在本 創作一較佳實施例中，影像擷取單元23位於輸送單元31 之檢測區311上方，並用以對檢測區311内之待測晶片或 晶圓22的表面211進行影像擷取。 [0030] 在實際應用時，輸送單元31主要用以進行晶片或晶 圓22的輸送，當輸送單元31將晶片或晶圓22傳送至檢測 區311時，便可進一步以影像擷取單元23進行攝像。在本 創作一較佳實施例中，當晶片或晶圓22被傳送至檢測區 311時，可使得輸送單元31暫時停止晶片或晶圓22的輸送 ，並有利於以影像擷取單元23對靜置的晶片或晶圓22擷 取影像。 [0031] 輸送單元31的周圍設置有一個或多個反射單元25， 例如可將反射單元25設置在輸送單元31之檢測區311的周 圍。當待測晶片或晶圓22進入檢測區311時，影像擷取單 元23可透過反射單元25對晶片或晶圓22的側邊223進行 影像的擷取。 [0032] 請參閱第5圖，為本創作半導體元件檢驗機又一實 施例的構造示意圖。如圖所示，本創作所述之半導體元 件檢驗機40主要包括有一輸送單元31、一影像擷取單元 23、至少一反射單元25及至少一發光單元47，其中輸送 單元31可用以進行一個或多個晶片或晶圓22的輸送，而 影像擷取單元23則可用以對輸送單元31上的晶片或晶圓 22進行影像的擷取。 [0033] 輸送單元31的部分區域可被定義成為一檢測區311， 其中影像擷取單元23被設置在輸送單元31之檢測區311的 10022332^^^^ A〇101 ^ 9 1 / ^ 18 I 1013215108-0 M439175 101年06月07日核正替换頁 上方，而反射單元25則被設置在檢測區311的周圍。在本 創作實施例中，半導體元件檢驗機40還包括有複數個發 光單元47，其中發光單元47位於輸送單元31之檢測區 311的周圍，並用以將光源投射在晶片或晶圓22的側邊 223。此外，發光單元47的數量可與反射單元25的數量相 同，並可與反射單元25相鄰。 [0034] 透過發光單元4 7將光源投射在晶片或晶圓2 2的側邊 223，將更有利於以影像擷取單元23對晶片或晶圓22的側 邊223進行影像的擷取。在實際應用時，發光單元47可為 發散光源，且發光單元47可相對於晶片或晶圓22進行距 離及角度的調整，使得發光單元47所產生的光源可正確 的投射在晶片或晶圓22的側邊223。此外，在不同實施例 中，亦可選擇可產生不色光之發光單元47，例如發光單 元47可用以產生紅光、藍光或紫外光，藉此以提高晶片 或晶圓2 2之檢測的精確度。 [0035] 本創作實施例所述之發光單元47亦可被應用在第2 圖所述之半導體元件檢驗機20上，發光單元47可設置於 承載座21之檢測區211周圍，並用以將光源投射在晶片或 晶圓22的側邊223，以利於影像擷取單元23對晶片或晶圓 22的側邊223進行攝像。 [0036] 以上所述者，僅為本創作之較佳實施例而已，並非 用來限定本創作實施之範圍，即凡依本創作申請專利範 圍所述之形狀、構造、特徵及精神所為之均等變化與修 飾，均應包括於本創作之申請專利範圍内。 10022332^^^^ 【圖式簡單說明】 A0101 .第10頁/共18頁 1013215108-0 M439175 [0037] [0038] 101年06月07日按正替換頁 第1圖：為習用晶片檢測裝置之構造示意圖； 第2圖：為本創作半導體元件檢驗機一實施例的構造示 意圖； [0039] 第3圖：為本創作半導體元件檢驗機一實施例的側面示 意圖； · [0040] 第4圖：為本創作半導體元件檢驗機又一實施例的構造 不意圖，及 [0041] 第5圖：為本創作半導體元件檢驗機又一實施例的構造 示意圖。 【主要元件符號說明】 [0042] 10 晶片檢測裝置 11 承載座 [0043] 12 晶片 121 上表面 [0044] 13 影像擷取單元 [0045] 20 半導體元件檢驗機 21 承載座 [0046] 211 檢測區 22 半導體元件 [0047] 221 表面 223 側邊 [0048]. 23 影像辑取單元 25 反射單元 [0049] 30 半導體元件檢驗機 31 輸送單元 [0050] 311 檢測區 40 半導體元件檢驗機 [0051] 47 發光單元 10022332^^^ A〇101 第11頁/共18頁 1013215108-0[0009] Another object of the present invention is to provide a semiconductor component inspection machine, which mainly comprises at least one reflective unit disposed around a transport unit, thereby being capable of transferring wafers or wafers to wafers or wafers. The surface and sides are tested. Dirty 233# single number deletion 1 page 4 / total 18 pages 1013215108-0 M439175 [0010] 101 years. June 07th replacement page for the above purpose, the present invention provides a semiconductor component inspection machine, including: a transport unit for transporting at least one wafer or at least one wafer, and the transport unit includes a detection area; an image capture unit located above the transport unit for using a wafer or wafer located in the detection area The image is captured by the surface; and the at least one reflecting unit is located around the conveying unit, wherein the image capturing unit captures the image of the side of the wafer or the wafer through the reflecting unit. [0011] The present invention also provides another semiconductor component inspection machine, comprising: a carrier for carrying at least one wafer or at least one wafer; an image capturing unit located above the carrier and used for the wafer or An image capture is performed on a surface of the wafer; and at least one reflective unit is disposed around the carrier, wherein the image capturing unit captures an image of a side of the wafer or the wafer through the reflective unit. [0012] An embodiment of the above semiconductor component inspection machine in which the appearance of the wafer or wafer is of any geometric shape or approximately circular shape, and the reflection unit forms a bad structure similar to the shape of the wafer or wafer. [0013] An embodiment of the semiconductor component inspection machine includes at least one light emitting unit for projecting a light source on a side of a wafer or a wafer. [0014] An embodiment of the above semiconductor component inspection machine, wherein the light emitting unit is located around the detection area of the transport unit. [0015] An embodiment of the above semiconductor component inspection machine, wherein the number of light emitting units is the same as the number of reflective units. [0016] An embodiment of the above semiconductor component inspection machine, wherein the wafer or wafer includes a plurality of sides, and the number of reflective cells and the wafer or wafer 10022332# single number A 〇 101 page 5 / 18 pages 1013215108 [0018] [0020] [0020] [0021] The number of sides of the nuclear replacement page is the same on June 7, 101. An embodiment of the above semiconductor component inspection machine wherein the reflection unit is located around the detection zone of the delivery unit. c [Embodiment] Please refer to Fig. 2, which is a schematic structural view of an embodiment of a semiconductor component inspection machine. As shown, the semiconductor component inspection machine 20 mainly includes a carrier 21, an image capturing unit 23, and at least one reflecting unit 25. The carrier 21 can be used to carry at least one semiconductor element 22 such as a wafer or at least one wafer. The image is taken by the image capturing unit 23 for the wafer or wafer 22 to be measured. A portion of the carrier 21 can be defined as a detection area 211, and the image capturing unit 23 is disposed above the carrier 21 to facilitate capturing images of the wafer or wafer 22 to be tested. The image manipulation unit 23 can be a Charge-coupled Device (CCD) or a Complementary Metal-Oxide-Seraiconductor (CMOS). In the preferred embodiment of the present invention, the image capturing unit 23 is located above the detection area 211 of the carrier 21 and is used to perform the wafer or wafer 22 to be tested placed in the detection area 211 of the carrier 21. The image capture, for example, captures the image of the surface (upper or lower surface) 221 of the wafer or wafer 22 and forms a digital image of the wafer or wafer 22. In addition, the digital image data of the surface 221 of the wafer or wafer 22 to be tested may be further analyzed and compared to obtain a wafer or wafer to be tested 10022332# single number A 〇 101 page 6 / 18 pages 1013215108 -0 M439175 / 101 years. 06 months 0> Day correction replaces the quality of surface 221 of page 22. For example, the digital image data of the wafer or wafer 22 can be compared with the image data of the target wafer or wafer to know the difference in size between the wafer or wafer 22 to be tested and the target wafer or wafer, thereby Knowing whether the wafer or wafer 22 to be tested meets the product requirements, it is of course also possible to know from the digital image data whether the surface of the wafer or wafer 22 is stained or structurally defective. [0022] One or more reflecting units 25 are disposed around the carrier 21, for example, the reflecting unit 25 may be disposed around the detecting area 211 of the carrier 21. When the wafer or wafer 22 to be tested is located in the detection area 211, the image capturing unit 23 can image the side (side surface) 223 of the wafer or wafer 22 through the reflection unit 25, as shown in FIG. Show. [0023] The image capture unit 23 performs image capture on the side 22 of the wafer or wafer 22, and the side 223 of the wafer or wafer 22 can be detected, and the wafer or wafer 22 can be further detected. Whether there is dirt or structural defects at the interface between the surface 221 and the side 223, thereby improving the accuracy of the detection of the wafer or wafer 22, and performing wafer or wafer 2 2 according to the result of the detection. Classification 8 [0024] In practice, the reflection unit 25 has a function of angle adjustment, and the user can adjust the angle of the reflection unit 25 so that the light source scattered by the side 223 of the wafer or wafer 22 is projected to the reflection unit 25 and transmitted through the reflection. The unit 25 projects the scattered light source to the image capturing unit 23 so that the image capturing unit 23 can perform image capturing on the side 223 of the wafer or wafer 22. In various embodiments, the relative position between the reflective unit 25 and the wafer or wafer 22 and/or image capture unit 23 is also adjustable. The semiconductor component inspection machine 20 can be used for wafers or wafers 22 of various sizes by the arrangement of the angles and positions of the reflective unit 25, which can be used for the semiconductor component inspection machine 20 1013215108-0 10022332^^^51 A0101 * 7 1 7 ^ 18 1 M439175. [0025] In a preferred embodiment of the present invention, the wafer or wafer 22 includes a plurality of sides 223, and the number of reflective units 25 is the same as the wafer or crystal. The number of sides 223 of the circle 22 is the same. In addition, the appearance of the wafer or wafer 22 can be any geometric shape, and the plurality of reflective units 25 form an annular configuration similar to the shape of the wafer or wafer 22 and disposed about the detection region 211. The wafer or wafer 22 as shown in Fig. 2 of the present invention has a quadrangular shape and includes four side edges 223, and the number of the reflecting units 25 is also four, and forms an approximately quadrilateral shape, and the ring is set for detection. Around area 211. Each of the reflective units 25 can respectively project an image of each side 223 of the wafer or wafer 22 to the image capturing unit 23, whereby the image capturing unit 23 can simultaneously acquire the surface 221 of the wafer or wafer 22 to be tested and each Image of side 223. [0029] [0029] In various embodiments, the number of reflective units 25 can be adjusted as the number of sides of the wafer or wafer 22 to be tested is adjusted. Further, if the shape of the wafer or wafer 22 is approximately circular, one or more of the reflecting units 25 may be formed into a circular annular configuration and disposed around the wafer or wafer 22. Please refer to Fig. 4, which is a schematic structural view of still another embodiment of the semiconductor component inspection machine of the present invention. As shown, the semiconductor component inspection machine 30 of the present invention mainly includes a transport unit 31, an image capture unit 23 and at least one reflection unit 25, wherein the transport unit 31 can be used to perform one or more wafers or wafers. The image capture unit 23 can be used to image capture the wafer or wafer 22 on the transport unit 31. A partial area of the transport unit 31 can be defined as a detection area 311, and the image capture unit 23 is corrected by the correction page on June 07, 101, and the number of pages A10101, page 8 of 18, 1013215108-0, M439175 The image capturing unit 23 is located above the detecting area 311 of the transport unit 31 and is used to face the surface of the wafer or wafer 22 to be tested in the detecting area 311. 211 performs image capture. [0030] In practical applications, the transport unit 31 is mainly used for transporting the wafer or the wafer 22. When the transport unit 31 transfers the wafer or wafer 22 to the detection area 311, the image capture unit 23 can further perform the image capture unit 23. Camera. In a preferred embodiment of the present invention, when the wafer or wafer 22 is transferred to the detection region 311, the transport unit 31 can temporarily stop the transport of the wafer or wafer 22, and facilitate the image capture unit 23 to be static. The placed wafer or wafer 22 captures an image. One or more reflecting units 25 are disposed around the conveying unit 31, and for example, the reflecting unit 25 may be disposed around the detecting area 311 of the conveying unit 31. When the wafer or wafer 22 to be tested enters the detection area 311, the image capturing unit 23 can image the side 223 of the wafer or wafer 22 through the reflection unit 25. [0032] Referring to FIG. 5, a schematic structural view of still another embodiment of the semiconductor component inspection machine of the present invention is shown. As shown, the semiconductor component inspection machine 40 of the present invention mainly includes a transport unit 31, an image capture unit 23, at least one reflection unit 25, and at least one illumination unit 47, wherein the delivery unit 31 can be used to perform one or The plurality of wafers or wafers 22 are transported, and the image capture unit 23 can be used to image the wafers or wafers 22 on the transport unit 31. [0033] A partial area of the transport unit 31 can be defined as a detection area 311, wherein the image capturing unit 23 is disposed at the detection area 311 of the transport unit 31 at 10022332^^^^ A〇101 ^ 9 1 / ^ 18 I 1013215108-0 M439175 On June 7, 101, the top of the replacement page is verified, and the reflection unit 25 is disposed around the detection area 311. In the present embodiment, the semiconductor component inspection machine 40 further includes a plurality of light emitting units 47, wherein the light emitting unit 47 is located around the detection area 311 of the transport unit 31 and is used to project a light source on the side of the wafer or wafer 22. 223. Further, the number of the light emitting units 47 may be the same as the number of the reflecting units 25 and may be adjacent to the reflecting unit 25. [0034] Projecting the light source through the light-emitting unit 47 to the side 223 of the wafer or wafer 22 will facilitate image capture by the image capture unit 23 on the side 223 of the wafer or wafer 22. In practical applications, the light emitting unit 47 can be a divergent light source, and the light emitting unit 47 can adjust the distance and angle with respect to the wafer or the wafer 22, so that the light source generated by the light emitting unit 47 can be correctly projected on the wafer or the wafer 22 . Side 223. In addition, in different embodiments, a light-emitting unit 47 that can generate a colorless light may be selected. For example, the light-emitting unit 47 may be used to generate red, blue or ultraviolet light, thereby improving the accuracy of detection of the wafer or wafer 22. . [0035] The light-emitting unit 47 of the present embodiment can also be applied to the semiconductor component inspection machine 20 of FIG. 2, and the light-emitting unit 47 can be disposed around the detection area 211 of the carrier 21 for using the light source. Projected on the side 223 of the wafer or wafer 22 to facilitate imaging of the side 223 of the wafer or wafer 22 by the image capture unit 23. [0036] The above description is only for the preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, that is, the shape, structure, features and spirit as described in the scope of the patent application is equal. Changes and modifications are to be included in the scope of the patent application for this creation. 10022332^^^^ [Simple description of the drawing] A0101. Page 10/18 pages 1013215108-0 M439175 [0038] [0038] On June 7, 101, according to the replacement page, Figure 1 is a conventional wafer inspection device. FIG. 2 is a schematic view showing the configuration of an embodiment of the semiconductor component inspection machine of the present invention; [0039] FIG. 3 is a side view showing an embodiment of the semiconductor component inspection machine of the present invention; [0040] FIG. A configuration of a further embodiment of the semiconductor component inspection machine of the present invention is not intended, and [0041] FIG. 5 is a schematic structural view of still another embodiment of the semiconductor component inspection machine of the present invention. [Main component symbol description] [0042] 10 wafer detecting device 11 carrier [0043] 12 wafer 121 upper surface [0044] 13 image capturing unit [0045] 20 semiconductor component inspection machine 21 carrier [0046] 211 detection area 22 Semiconductor component [0047] 221 Surface 223 Side [0048]. 23 Image capture unit 25 Reflector unit [0049] 30 Semiconductor component inspection machine 31 Transport unit [0050] 311 Detection area 40 Semiconductor component inspection machine [0051] 47 Light-emitting unit 10022332^^^ A〇101 Page 11 of 18 1013215108-0