M436926 五、新型說明： 【新型所屬之技術領域】 本創作是有關於一種離子植入機的離子源，且特別是 有關於一種具有陰極模組的離子植入機的離子源。 【先前技術】 離子植入(Ion Implantation)技術不但能提供各種半導 體摻雜的需求，且由於其能準確地控制摻質的摻入含量與 刀佈，因此，離子植入技術已成為半導體元件製程上最主 要的摻質預置技術。離子植入機為用來實施離子植入技術 的半導體製程設備’其作用為引導具有能量的、帶電粒子 進入晶圓。 離子源（ion source)是離子植入機的主要部分之一，其 用來產生離子的硬體設備，離子源的基本原理是運用特殊 氣體，在適當的低壓下，把氣體分子藉由熱電子撞擊而離 子化，因而產生離子植入機所需要使用的摻質離子。進一 步地說，離子源利用一燈絲（filament)，其例如為鎢絲，發鲁 射出熱電子轟擊一陰極以加熱陰極，可使陰極產生熱電子 並與離子源内的反應氣體相互撞擊，以產生電漿。 在習知用於產生熱電子的陰極中，陰極連接一支撐 才干，且藉由固定支撐桿以固定陰極與離子源的相對位置。 然而，隨著燈絲長時間的加熱以及陰極與氣體反應後，於 陰極與支撐桿之間的連接處受到高溫加熱將使得上述之連 接處及陰極與氣體反應之平面處產生耗損，並使得支撐桿 4 成離子源無法產生離子，並使 將會提高離子源的更換頻率以及 容易斷裂而讓陰極脫落，造4 離子植入機當機。因此，將, 增加離子植入機的維修成本。 【新型内容】 其陰極具有較佳的固持結 本創作提供一種陰極模組，其陸 構，以減少離子植入機的維修成本。 本創作提出-種陰極模組，適用於一離子機的一離子 二括-腔體與—承載座體。腔體固設於承載座 體上且具有-萃取孔與—貫孔。陰極模組包括—陰極、一 燈絲、-燈絲裝置件與—炎持件。陰極具有—容置槽，其 中陰極的一端經由貫孔穿入腔體的内部，且陰極的另曰一^ 位於腔體之外。麟、㈣加熱陰極且配置於容置槽内，以 使陰極發射出熱電子，並與位於腔體的内部的一氣體源相 互作用而產生電漿。這些離子經由萃取孔被萃取出腔體。 燈絲裝置件裝置燈絲。夾持件具有一支撐部與兩失持部， 其中支撐部固設於承載座體上且連接兩夾持部，且支撐部 與兩夾持部構成一類丫形狀並存在一容置開口。陰極的另 一鳊配置於容置開口内，且兩夾持部夾持陰極的另一端。 在本創作之一實施例中，上述之兩夾持部的其中之一 個具有一限位部，且限位部朝向容置槽的一延伸方向突 伸。陰極的另一端的一端面抵靠於限位部，以使燈絲與险 極之間存在一間距，其中此間距可為0.7mm。 " 在本創作之一實施例中’上述之陰極更具有一環狀 部，環繞於陰極的—圓周。 _ 此外，陰極更具有至少一‘切°的直^大於貫孔的直徑。 至容置槽内且鄰近環狀部而設置:由陰極的圓周貫穿 部，述:燈絲具有兩個失持蠕 承载座體上，且各個鉗臂！：，臂的-端固設至 在本創作之-實㈣由另^夹持各個夾持端部。 為一體成型。、& 1 ，上述之支撐部與兩個夾持部 此外，擋板的材質反可為有鶴或 分的各個夹持部。 狀。卩^置，用以容置部 部夾持於陰二的且=夾持件的兩個夾持 夾持於陰極的外面，因此加熱陰極時’由於夾持部 入機的當機風險。藉此，可脫落而造成離子植 離子植入機的維修成本。4子源的更換頻率並降低 為讓本創作之上述特徵和優點能 舉貝施例，並配合所附圖式作詳細說明如下易下文特 【實施方式】 圖1 本創作一實施例之陰極模1 且的組合圖。圖2為 爆炸圖。圖3為圖i之陰極模組的局部 M436926 立體圖。請參考圖1、圖2與圖3，在本實施例中，陰極模 組100適用於離子植入機（未繪示）的一離子源1。離子 源1包括一腔體10與一承載座體20。腔體10固設於承載 座體20上，且腔體1〇可由多塊隔板12所構成。腔體1〇 具有一萃取孔12a與一貫孔12b，其中萃取孔123位於這 些隔板12的其中之一塊上，且貫孔12b位於這些隔板12 的其中之另一塊上。需說明的是，為使視圖清楚及易懂， 圖3的視角不同於圖1的視角。 陰極模組100包括一陰極11〇、一燈絲12〇、一燈絲 裝置件130與一夾持件140。陰極11()具有一容置槽112， 且陰極Π0具有一第一端ii〇a與一第二端u〇b，其中陰 極110的第一端110a經由腔體1〇的貫孔pb穿入於腔體 10的内部，且陰極110的第二端ll〇b位於腔體1〇之外。 燈絲120用以加熱陰極110且配置於容置槽112内，以使 陰極110發射出多個熱電子’並與灌入於腔體1〇的内部的 一氣體源（gassource)14相互作用而產生多個離子。這些離 子經由卒取孔12a被卒取出腔體1 〇。燈絲裝置件1裝置 燈絲120。夾持件140具有一支撐部142與兩個夾持部 144，其中支撐部142固設於承載座體2〇上且連接兩個夾 持部144 ’且支撐部142與兩個夹持部144構成一類丫形 狀並存在一容置開口 140a。陰極110的第二端u〇b配置 於夾持件140的容置開口 140a内，且兩個夾持部142夾持 陰極110的第二端110b。因此，在燈絲12〇通上電源且發 射出多個熱電子以加熱陰極110後，由於夾持件14〇'兩個 7 M436926 夾持部144夾持在陰極ι10的第二端u〇b的外表面上可 有效地避免陰極110因燈絲120加熱及陰極11〇與氣體源 14的氣體反應後耗相而產生脫洛的風險。藉此，可減少^ 子源1的更換頻率並降低離子植入機的維修成本。M436926 V. New Description: [New Technology Field] This creation is about an ion source for an ion implanter, and in particular for an ion source with an ion implanter with a cathode module. [Prior Art] Ion Implantation technology not only provides various semiconductor doping requirements, but also because it can accurately control the doping content of the dopant and the knife cloth, the ion implantation technology has become a semiconductor component process. The most important doping preset technology. Ion implanters are semiconductor process equipment used to implement ion implantation techniques to direct energetic, charged particles into the wafer. The ion source is one of the main parts of the ion implanter, which is used to generate ions. The basic principle of the ion source is to use a special gas to heat the gas molecules at a suitable low pressure. Ionization by impact, thus producing dopant ions that are required for ion implanters. Further, the ion source utilizes a filament, such as a tungsten wire, which emits a hot electron to bombard a cathode to heat the cathode, causing the cathode to generate hot electrons and collide with the reaction gas in the ion source to generate electricity. Pulp. In conventional cathodes for generating hot electrons, the cathode is connected to a support and the relative position of the cathode to the ion source is fixed by fixing the support rod. However, as the filament is heated for a long period of time and the cathode reacts with the gas, the high temperature heating at the junction between the cathode and the support rod causes a loss in the junction between the junction and the cathode and the gas, and causes the support rod 4 The ion source is unable to generate ions, and will increase the frequency of replacement of the ion source and easily break the cathode to cause the cathode to fall off, and the 4 ion implanter will crash. Therefore, the maintenance cost of the ion implanter will be increased. [New content] The cathode has a better holding junction. The present invention provides a cathode module with a land structure to reduce the maintenance cost of the ion implanter. This creation proposes a cathode module suitable for an ion-two-cavity and a carrier body of an ion machine. The cavity is fixed on the carrier body and has an extraction hole and a through hole. The cathode module comprises a cathode, a filament, a filament device and an inflammatory member. The cathode has a receiving groove, wherein one end of the cathode penetrates into the interior of the cavity via the through hole, and the other side of the cathode is located outside the cavity. Lin (4) heats the cathode and is disposed in the accommodating groove so that the cathode emits hot electrons and interacts with a gas source located inside the cavity to generate plasma. These ions are extracted into the cavity via the extraction holes. Filament device device filament. The clamping member has a supporting portion and two missing portions, wherein the supporting portion is fixed on the carrier body and connects the two clamping portions, and the supporting portion and the two clamping portions form a shape of a shape and a receiving opening exists. Another crucible of the cathode is disposed in the receiving opening, and the two clamping portions sandwich the other end of the cathode. In one embodiment of the present invention, one of the two clamping portions has a limiting portion, and the limiting portion protrudes toward an extending direction of the receiving groove. An end face of the other end of the cathode abuts against the stopper so that there is a space between the filament and the dangerous electrode, wherein the pitch may be 0.7 mm. " In an embodiment of the present invention, the cathode has an annular portion surrounding the circumference of the cathode. In addition, the cathode has at least one 'cut' diameter which is larger than the diameter of the through hole. It is disposed in the accommodating groove and adjacent to the annular portion: a circumferential penetrating portion of the cathode, the filament has two non-suspended creeping carrier bodies, and each caliper arm! : The end of the arm is fixed to the end of the creation - the actual (four) is held by the other ^ clamping end. For one-piece molding. , & 1 , the above-mentioned support portion and the two clamping portions. Further, the material of the baffle may be a respective clamping portion having a crane or a minute. shape. The 用以^ is placed so that the accommodating portion is clamped to the yin and the two nips of the nip are clamped to the outside of the cathode, so that when the cathode is heated, the risk of occlusion due to the nip is entered. Thereby, it can fall off and cause maintenance cost of the ion implanter. The frequency and frequency of the replacement of the four sub-sources are reduced to the above-mentioned features and advantages of the present invention, and the following description is given in detail with reference to the following drawings. [Embodiment] FIG. 1 is a cathode mold of an embodiment. A combination of 1 and . Figure 2 shows the exploded view. Figure 3 is a partial perspective view of the M436926 of the cathode module of Figure i. Referring to FIG. 1, FIG. 2 and FIG. 3, in the embodiment, the cathode mold set 100 is applied to an ion source 1 of an ion implanter (not shown). The ion source 1 includes a cavity 10 and a carrier body 20. The cavity 10 is fixed to the carrier body 20, and the cavity 1 is composed of a plurality of spacers 12. The cavity 1 has an extraction hole 12a and a constant hole 12b, wherein the extraction hole 123 is located on one of the spacers 12, and the through hole 12b is located on the other of the spacers 12. It should be noted that the viewing angle of FIG. 3 is different from the viewing angle of FIG. 1 in order to make the view clear and easy to understand. The cathode module 100 includes a cathode 11 〇, a filament 12 〇, a filament device member 130 and a clamping member 140. The cathode 11() has a receiving groove 112, and the cathode Π0 has a first end ii〇a and a second end u〇b, wherein the first end 110a of the cathode 110 penetrates through the through hole pb of the cavity 1〇 Inside the cavity 10, and the second end 11b of the cathode 110 is located outside the cavity 1〇. The filament 120 is used to heat the cathode 110 and is disposed in the accommodating groove 112, so that the cathode 110 emits a plurality of hot electrons' and interacts with a gas source 14 poured into the interior of the cavity 1 Multiple ions. These ions are removed from the cavity 1 through the stroke hole 12a. Filament device 1 device filament 120. The clamping member 140 has a supporting portion 142 and two clamping portions 144. The supporting portion 142 is fixed on the bearing body 2 且 and connects the two clamping portions 144 ′ and the supporting portion 142 and the two clamping portions 144 . A type of dome shape is formed and a receiving opening 140a is present. The second end u?b of the cathode 110 is disposed in the receiving opening 140a of the holder 140, and the two clamping portions 142 sandwich the second end 110b of the cathode 110. Therefore, after the filament 12 is powered on and a plurality of hot electrons are emitted to heat the cathode 110, the clamping portion 14''s 7 M436926 clamping portion 144 is clamped at the second end u〇b of the cathode ι10. The risk of detachment of the cathode 110 due to the heating of the filament 120 and the reaction of the cathode 11 〇 with the gas of the gas source 14 can be effectively avoided on the outer surface. Thereby, the frequency of replacement of the source 1 can be reduced and the maintenance cost of the ion implanter can be reduced.
圖4為圖1之陰極模組沿A_A割面線的剖面圖。請參 考1、圖3與圖4,本實施例的兩個夾持部144的其中之一 ，可具有一限位部144a，且限位部14知朝向陰^ i比的 容置槽112的-延伸方向D突伸，其+此延伸方向d由陰 極110的第二端ll〇b朝向陰極11〇的第一端u〇a。陰極 110的第二端ll〇b的一端面丨10c抵靠於限位部14如，以 使燈絲120與該陰極11 〇之間存在一間距s。進一步地說， 當燈絲120加熱陰極no時，燈絲12〇與陰極11〇之門可 保持一距離’以滿足燈絲120所發射的熱電子轟擊陰極 的距離。因此，當陰極U0的端面⑽抵靠於夾持件⑽ 的限位部144a時，於燈絲120與陰極11〇之間的間距s 可做為校正燈絲12G的位置之用，射本實施例的^巨s 較佳為0.7麵’且當間距S為0.7職時，可在燈絲12〇盘 陰極110之間保持一最佳距離。 /、 此外，為了將加強限制陰極110與燈絲120的相對位 置，以避免燈絲120與陰極110之間的間距s產生誤差。 因此，本實施例的支撐部142與兩個夾持部144可為一體 成型的結構。藉此，可使夹持件14〇具有較佳的尺寸精产， 以避免夾持件140的組裝公差造胡距s的誤差。帝^明 的是，本創作的支撐部與兩夾持部除了可以一體成型^ 8 M436926 製造之外，在另—實施例中，支撐部與兩失持部亦可以八 件方式製如互相絲。因此’錢者可依據實際^ 況’選擇支撐部與兩夾持部的製造方式。 月 請參考圖2與圖3，本實施例的燈絲12〇具有兩個 持端部122 ’且燈絲裝置件130具有兩個鉗臂132。各 臂132的第一端132a固設至承載座體2〇上，且各個鉗臂 132的第二端132b夾持各個夾持端部122。藉此， 燈絲120組裝。 又取 ，參考圖2、圖3與圖4，本實施例的陰極11〇更具 有二％狀部114，環繞於該陰極11〇的一圓周。陰極工比 之環狀部114的直徑dl大於腔體1〇之貫孔既的直柄 汜。藉此，可避免腔體1〇内的氣體源14外洩以及腔體= 内的高溫散逸，以提高位於雜1G _子的敎性。此 外，當陰極110嵌入於腔體10的貫孔12b時，由於環狀部 1H的直徑dl大於腔體1〇之貫孔12b的直徑汜，'因此環 狀部114亦可作為定位陰極110之用途。 衣 承上述，陰極110更具有至少一環狀切槽116，其由 陰極110的圓周貫穿至容置槽112内且鄰近環狀部114'而 設置。進一步地說，在燈絲120發射出多個熱電子並持續 加，陰極110 —段時間後，陰極110的表面會產生高溫且 此高溫會傳導至夾持件140，而使失持件140產生熔化之 風險。因此，藉由環狀切槽116的配置，可使鄰近於兩夾 持。卩144的陰極110的高溫透過環狀切槽116傳遞至外 界，以減少兩夾持部144因過熱而熔化。 9 M436926 請參考圖1、圖2與圖3，在本實施例中，陰極模組 100更包括一擋板150，其配置於腔體1〇上。擋板15〇具 有一開口 152’且腔體1〇的萃取孔12&藉由開口 152暴露。 藉此配置’擋板150可用以阻隔位於腔體1〇内的高溫，亦 可減少腔體10的熱能散逸。此外，本實施例的擋板150 的材質可為耐高溫材質，其例如為鎢。藉此，可抵擋腔體 10的尚溫，且同時具有高強度之優點。另外，在另一實施4 is a cross-sectional view of the cathode module of FIG. 1 taken along line A_A. Referring to FIG. 3 and FIG. 4, one of the two clamping portions 144 of the embodiment may have a limiting portion 144a, and the limiting portion 14 is configured to face the receiving slot 112 of the cathode ratio. Extending direction D, which is + from the second end 11b of the cathode 110 towards the first end u〇a of the cathode 11A. An end face 丨 10c of the second end 11b of the cathode 110 abuts against the stopper portion 14 such that a distance s exists between the filament 120 and the cathode 11 。. Further, when the filament 120 heats the cathode no, the filament 12 〇 and the gate of the cathode 11 可 can maintain a distance 'to meet the distance of the hot electrons emitted by the filament 120 from the cathode. Therefore, when the end surface (10) of the cathode U0 abuts against the limiting portion 144a of the clamping member (10), the spacing s between the filament 120 and the cathode 11? can be used as the position for correcting the filament 12G. ^ Giant s is preferably 0.7 face 'and maintains an optimum distance between the filaments 12 of the filament 12 when the spacing S is 0.7. Further, in order to strengthen the relative position of the cathode 110 and the filament 120, an error is generated to avoid the spacing s between the filament 120 and the cathode 110. Therefore, the support portion 142 and the two clamping portions 144 of the present embodiment can be integrally formed. Thereby, the clamping member 14 can be made to have a better size and precision, so as to avoid the error of the assembly tolerance of the clamping member 140. It is imperative that the support portion and the two clamping portions of the present invention can be manufactured in one piece, in addition to the integral molding, in another embodiment, the support portion and the two missing portions can also be made in two pieces. . Therefore, the 'money can select the manufacturing method of the support portion and the two clamping portions according to the actual condition. Referring to Figures 2 and 3, the filament 12 of the present embodiment has two holding ends 122' and the filament assembly 130 has two jaw arms 132. The first end 132a of each arm 132 is secured to the carrier body 2, and the second end 132b of each of the jaw arms 132 grips each of the clamping ends 122. Thereby, the filament 120 is assembled. Further, referring to Figs. 2, 3 and 4, the cathode 11'' of the present embodiment has a second portion 114 which surrounds a circumference of the cathode 11''. The diameter dl of the annular portion 114 of the cathode working ratio is larger than the straight shank of the through hole of the cavity. Thereby, the leakage of the gas source 14 in the cavity 1〇 and the high temperature dissipation in the cavity= can be avoided to improve the enthalpy of the miscellaneous 1G_sub. In addition, when the cathode 110 is embedded in the through hole 12b of the cavity 10, since the diameter dl of the annular portion 1H is larger than the diameter 汜 of the through hole 12b of the cavity 1', the annular portion 114 can also serve as the positioning cathode 110. use. In the above, the cathode 110 further has at least one annular slit 116 which is formed by the circumference of the cathode 110 penetrating into the accommodating groove 112 and adjacent to the annular portion 114'. Further, after the filament 120 emits a plurality of hot electrons and continues to be applied, the cathode 110 may generate a high temperature on the surface of the cathode 110 for a period of time and the high temperature is transmitted to the holder 140 to melt the holder 140. Risk. Therefore, by the configuration of the annular slit 116, it is possible to be adjacent to the two holdings. The high temperature of the cathode 110 of the crucible 144 is transmitted to the outer space through the annular slit 116 to reduce melting of the two holding portions 144 due to overheating. 9 M436926 Please refer to FIG. 1 , FIG. 2 and FIG. 3 . In the embodiment, the cathode module 100 further includes a baffle 150 disposed on the cavity 1 . The baffle 15 has an opening 152' and the extraction holes 12& of the cavity 1 are exposed by the opening 152. By this configuration, the baffle 150 can be used to block the high temperature located in the cavity 1 and also to reduce the thermal energy dissipation of the cavity 10. In addition, the material of the baffle 150 of the embodiment may be a high temperature resistant material, which is, for example, tungsten. Thereby, the temperature of the cavity 10 can be resisted, and at the same time, it has the advantage of high strength. In addition, in another implementation
例=，擋板150的材質可為石墨。藉此，可抵擋腔體1〇 的咼，，且相較於鎢具有較低廉的價格。換言之，當擋板 150 1滿足強度的需求時，擔板150的材質可採用鶴。反 之，虽擋板150需滿足價格的需求時，擋板15〇的材質 採用石墨。 再者，擋板150具有多個凹陷部154。各個凹陷部154 對應於各個夾持部144而設置，用以容置部分的各個夾持 部144。藉此，可減少擋板15〇與夾持件14〇互相接觸之 風險，而造成離子植入機短路。For example, the material of the baffle 150 may be graphite. Thereby, the ridge of the cavity 1 抵 can be resisted, and the price is lower than that of tungsten. In other words, when the baffle 150 1 satisfies the strength requirement, the material of the plate 150 can be a crane. Conversely, although the baffle 150 needs to meet the price requirement, the material of the baffle 15 is made of graphite. Furthermore, the baffle 150 has a plurality of recesses 154. The respective recessed portions 154 are provided corresponding to the respective holding portions 144 for accommodating the respective holding portions 144 of the portions. Thereby, the risk of the baffle 15 〇 and the holding member 14 〇 being in contact with each other can be reduced, causing the ion implanter to be short-circuited.
面 險 综上所述，本創作的夾持件具有支撐部與兩夾持部， 夾持部構成類Y形狀並存在容置開口。在將 =於谷置開口_ ’可使兩祕部夾持陰極的外表 。错可有效地避免陰極陳絲加熱而產生脫落 成m離子源的更換鮮以及降低離子植人機的維修 ^在,^失持部具有限位部時，可使燈絲與陰極之 ===，因此可做為校正燈絲的位置之用。再者， d更n環狀部’且陰極之環狀部的直徑大於腔體之 1V1咔此 :r本逸，其中擋板的材質== ，.:任二 =:= 本創作之精神 :μ知識者’在不脫離In summary, the grip member of the present invention has a support portion and two clamping portions, and the clamping portion constitutes a Y-like shape and has a receiving opening. In the case of placing the opening _ ' in the valley, the two parts can be clamped to the appearance of the cathode. The error can effectively avoid the replacement of the cathode filament wire to produce the replacement of the m ion source and reduce the maintenance of the ion implanter. When the loss portion has a limit portion, the filament and the cathode can be made ===, Therefore, it can be used as a position for correcting the filament. Furthermore, d is more n-ring portion' and the diameter of the annular portion of the cathode is larger than 1V1 of the cavity: r is the current, wherein the material of the baffle ==, .: any two =:= The spirit of the creation: μ knowledge is 'not leaving
創作之保魏圍當視後二請⑶=為;本 【圖式簡單說明】 :2創作一實施例之陰極模組的組合圖。 圖2為圖1之陰極模組的爆炸圖。 圖3為圖1之陰極模組的局部立體圖 圖4為圖1之陰極模組沿Μ割面i的剖面圖。The creation of the Wei Weiwei after the second two (3) = for; this [schematic description]: 2 create a combination of a cathode module of an embodiment. 2 is an exploded view of the cathode module of FIG. 1. 3 is a partial perspective view of the cathode module of FIG. 1. FIG. 4 is a cross-sectional view of the cathode module of FIG. 1 along the cut surface i.
【主要元件符號說明】 1 ·離子源 10 :腔體 12 .隔板 12a :萃取孔 12b :貫孔 14 :氣體源 20 :承載座體 1〇〇 :陰極模組 110 :陰極 11 M436926 110a :第一端 110b :第二端 110c :端面 112 :容置槽 114 :環狀部 116 :環狀切槽 120 :燈絲 122 :夾持端部 130 :燈絲裝置件 132 :鉗臂 132a :第一端 132b ··第二端 140 :夾持件 140a :容置開口 142 :支撐部 144 :夾持部 144a :限位部 150 :擋板 152 :開口 154 :凹陷部 (Π、d2 :直徑 D:延伸方向 S :間距[Main component symbol description] 1 · Ion source 10: cavity 12 . Separator 12a : Extraction hole 12b : Through hole 14 : Gas source 20 : Carrier body 1 : Cathode module 110 : Cathode 11 M436926 110a : One end 110b: second end 110c: end surface 112: accommodating groove 114: annular portion 116: annular grooving 120: filament 122: clamping end portion 130: filament device member 132: caliper arm 132a: first end 132b · Second end 140: Clamping member 140a: accommodating opening 142: Supporting portion 144: Clamping portion 144a: Restricting portion 150: Baffle 152: Opening 154: Depression (Π, d2: Diameter D: Extension direction S: spacing