TWM521259U - Cathode module - Google Patents
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- TWM521259U TWM521259U TW105201671U TW105201671U TWM521259U TW M521259 U TWM521259 U TW M521259U TW 105201671 U TW105201671 U TW 105201671U TW 105201671 U TW105201671 U TW 105201671U TW M521259 U TWM521259 U TW M521259U
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Abstract
Description
本新型創作是有關於一種陰極模組,且特別是有關於一種離子源的陰極模組。The present invention relates to a cathode module, and more particularly to a cathode module for an ion source.
離子植入(Ion Implantation)技術不但能提供各種半導體摻雜的需求,且由於其能準確地控制摻質的摻入含量與分佈,因此,離子植入技術已成為半導體元件製程上最主要的摻質預置技術。Ion Implantation technology not only provides various semiconductor doping requirements, but because it can accurately control the doping content and distribution of dopants, ion implantation technology has become the most important blending process in semiconductor devices. Quality preset technology.
離子植入機為用來實施離子植入技術的半導體製程設備,其作用為引導具有能量的、帶電粒子進入晶圓。離子源(ion source)是離子植入機的主要部分之一,其用來產生離子的硬體設備,離子源的基本原理是運用特殊氣體,在適當的低壓下,把氣體分子藉由熱電子撞擊而離子化,因而產生離子植入機所需要使用的摻質離子。An ion implanter is a semiconductor processing device used to implement ion implantation techniques to direct energized, charged particles into a wafer. The ion source is one of the main parts of the ion implanter, which is used to generate ions. The basic principle of the ion source is to use a special gas to heat the gas molecules at a suitable low pressure. Ionization by impact, thus producing dopant ions that are required for ion implanters.
進一步地說,離子源利用一燈絲(filament),其例如為鎢絲,發射出熱電子轟擊一陰極以加熱陰極,可使陰極產生熱電子並與離子源內的反應氣體相互撞擊,以產生電漿。Further, the ion source utilizes a filament, such as a tungsten wire, which emits hot electrons to bombard a cathode to heat the cathode, causing the cathode to generate hot electrons and collide with the reaction gas in the ion source to generate electricity. Pulp.
然而,隨著長時間的加熱及與高活性的反應氣體或解離的離子造成的腐蝕作用,因而容易在陰極底部與側壁之間產生破損或斷裂脫落等情形,因而讓離子植入機當機而無法運作,並因此增加離子源的更換頻率以及增加離子植入機的維修成本。However, with the long-time heating and the corrosive action caused by the highly reactive reaction gas or the dissociated ions, it is easy to cause breakage or breakage between the bottom of the cathode and the side wall, thereby causing the ion implanter to crash. It does not work, and therefore increases the frequency of ion source replacement and increases the cost of repairing the ion implanter.
本新型創作提供一種離子源的陰極模組,其藉由改變燈絲的輪廓配置,而得以提高陰極的使用壽命。The novel creation provides an ion source cathode module that improves the life of the cathode by changing the contour configuration of the filament.
本新型創作的陰極模組,適用於離子源。離子源包括箱體。陰極模組包括陰極與燈絲。陰極裝設於箱體的一側且陰極 倔具有背對於箱體的容置槽。燈絲配置於容置槽內。燈絲具有第一弧形部、第二弧形部與第三弧形部,其中第一弧形部連接在第二弧形部與第三弧形部之間。第二弧形部與第三弧形部彼此靠近而在第一弧形部的相對兩端處形成瓶頸 The cathode module of the present invention is suitable for an ion source. The ion source includes a tank. The cathode module includes a cathode and a filament. The cathode is mounted on one side of the case and the cathode The crucible has a receiving groove facing away from the box. The filament is disposed in the receiving groove. The filament has a first arcuate portion, a second arcuate portion and a third arcuate portion, wherein the first arcuate portion is coupled between the second arcuate portion and the third arcuate portion. The second curved portion and the third curved portion are close to each other to form a bottleneck at opposite ends of the first curved portion
在本新型創作的一實施例中,上述第一弧形部的內徑尺寸大於或等於第二弧形部的中央反曲點至第三弧形部的中央反曲點的相對距離。In an embodiment of the present invention, the inner diameter of the first curved portion is greater than or equal to the relative distance from the central inflection point of the second curved portion to the central inflection point of the third curved portion.
在本新型創作的一實施例中,上述第一弧形部的內徑尺寸為6.6mm,上述第二弧形部的中央反曲點至第三弧形部的中央反曲點的相對距離為5.4mm。In an embodiment of the present invention, the inner diameter of the first curved portion is 6.6 mm, and the relative distance from the central inflection point of the second curved portion to the central inflection point of the third curved portion is 5.4mm.
在本新型創作的一實施例中,上述的第一弧形部、第二弧形部與第三弧形部位於同一平面,且第一弧形部的開口朝向相對於第二弧形部的開口朝向及第三弧形部的開口朝向。In an embodiment of the present invention, the first curved portion, the second curved portion and the third curved portion are in the same plane, and the opening of the first curved portion is oriented opposite to the second curved portion. The opening faces and the opening of the third curved portion faces.
在本新型創作的一實施例中,上述的陰極在其容置槽內具有填角結構,環繞於第一弧形部、第二弧形部與第三弧形部。In an embodiment of the present invention, the cathode has a fillet structure in its receiving groove, surrounding the first curved portion, the second curved portion and the third curved portion.
在本新型創作的一實施例中,上述的容置槽具有槽底與槽壁,填角結構連接在槽底與槽壁之間。In an embodiment of the present invention, the accommodating groove has a groove bottom and a groove wall, and the fillet structure is connected between the groove bottom and the groove wall.
在本新型創作的一實施例中,上述的填角結構是內圓角。In an embodiment of the novel creation, the above-mentioned fillet structure is an inner fillet.
在本新型創作的一實施例中,上述內圓角的半徑為3mm。In an embodiment of the present invention, the inner fillet has a radius of 3 mm.
在本新型創作的一實施例中,上述的陰極模組還包括燈絲裝置件,具有兩個鉗臂,分別夾持燈絲的兩端,以使上述的第一弧形部、第二弧形部與第三弧形部伸入容置槽。In an embodiment of the present invention, the cathode module further includes a filament device member having two forceps arms respectively holding the two ends of the filament to make the first curved portion and the second curved portion. And the third curved portion extends into the receiving groove.
在本新型創作的一實施例中,上述的陰極模組還包括固定件,裝設於箱體的一側,且陰極嵌設在固定件中。In an embodiment of the present invention, the cathode module further includes a fixing member mounted on one side of the casing, and the cathode is embedded in the fixing member.
在本新型創作的一實施例中,上述的陰極還具有至少一嵌槽,而固定件具有至少一卡掣凸部,藉由卡掣凸部卡合於嵌槽,而使陰極穿設且固定於固定件中。In an embodiment of the present invention, the cathode further has at least one recessed groove, and the fixing member has at least one latching protrusion, and the cathode is inserted and fixed by the latching protrusion being engaged with the recessed groove. In the fixture.
在本新型創作的一實施例中,上述第二弧形部的虛擬中心至上述第三弧形部的虛擬中心的直線距離為8mm±1mm。In an embodiment of the present invention, the linear distance from the virtual center of the second curved portion to the virtual center of the third curved portion is 8 mm ± 1 mm.
基於上述,在本新型創作的上述實施例中,配置在陰極之容置槽內的燈絲區分為第一弧形部、第二弧形部與第三弧形部,其中第一弧形部連接在第二弧形部與第三弧形部之間,且更重要的是,燈絲在前述弧形部的輪廓是讓第二弧形部與第三弧形部朝向第一弧形部所在位置集中靠近,而在第一弧形部的相對兩端處形成瓶頸,亦即讓弧形部得以遠離陰極的側壁。如此一來,不但讓陰極的側壁免於遭受燈絲所產生熱電子的直接轟擊而得以具有較長的使用壽命外,也讓作為陰極熱源的燈絲能因所述弧形部的配置位置而產生熱源集中的效果,進而提高離子源的電漿產生效率。Based on the above, in the above embodiment of the present invention, the filament disposed in the accommodating groove of the cathode is divided into a first curved portion, a second curved portion and a third curved portion, wherein the first curved portion is connected Between the second curved portion and the third curved portion, and more importantly, the contour of the filament in the arcuate portion is such that the second curved portion and the third curved portion are located toward the first curved portion. Focusing close, and forming a neck at the opposite ends of the first curved portion, that is, allowing the curved portion to be away from the sidewall of the cathode. In this way, not only the side wall of the cathode is protected from the direct bombardment of the hot electrons generated by the filament to have a long service life, but also the filament as the cathode heat source can generate a heat source due to the arrangement position of the curved portion. The concentrated effect further increases the plasma generation efficiency of the ion source.
為讓本新型創作的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。The above described features and advantages of the present invention will become more apparent and understood from the following description.
圖1是依據本新型創作一實施例的一種離子源的示意圖,在此僅繪示離子佈植機的局部,較能清楚的辨識離子源的部分。圖2是圖1的離子源的爆炸圖。圖3是圖2的燈絲的示意圖,在此同時提供直角座標系,而圖3是以Y-Z平面繪示燈絲。請同時參考圖1至圖3,在本實施例中,離子植入機(未繪示)的離子源100包括箱體120、氣體產生器130與陰極模組110。箱體120例如是由多個隔板所構成,且箱體120具有內部空間SP、萃取孔122與貫孔124,其中萃取孔122位於箱體120的頂部,貫孔124位於箱體120的側部,氣體產生器130組裝於箱體120的底部,以將反應氣體gas灌入內部空間SP。BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a schematic illustration of an ion source in accordance with an embodiment of the present invention. Only a portion of the ion implanter is shown herein, and portions of the ion source are more clearly identified. 2 is an exploded view of the ion source of FIG. 1. Figure 3 is a schematic illustration of the filament of Figure 2, while providing a right angle coordinate system, while Figure 3 is a filament in the Y-Z plane. Referring to FIG. 1 to FIG. 3 simultaneously, in the embodiment, the ion source 100 of the ion implanter (not shown) includes a case 120, a gas generator 130 and a cathode module 110. The casing 120 is composed of, for example, a plurality of partitions, and the casing 120 has an internal space SP, an extraction hole 122 and a through hole 124, wherein the extraction hole 122 is located at the top of the casing 120, and the through hole 124 is located at the side of the casing 120. The gas generator 130 is assembled to the bottom of the tank 120 to inject the reaction gas gas into the internal space SP.
陰極模組110包括陰極114、燈絲112、燈絲裝置件111與固定件113。陰極114具有容置槽114a,其在陰極114裝設於箱體120之側部時背對於箱體120的內部空間SP,本實施例的陰極114實質上呈杯體結構,用以穿過前述貫孔124而裝設於箱體120的內部空間SP,但讓容置槽114a暴露於箱體120外。The cathode module 110 includes a cathode 114, a filament 112, a filament device member 111, and a fixture 113. The cathode 114 has a receiving groove 114a, which is opposite to the internal space SP of the casing 120 when the cathode 114 is mounted on the side of the casing 120. The cathode 114 of the present embodiment has a substantially cup structure for passing through the foregoing The through hole 124 is installed in the inner space SP of the casing 120, but the accommodating groove 114a is exposed to the outside of the casing 120.
如圖2所示,陰極114實際上是藉由嵌設於固定件113後再組裝於箱體120。進一步地說,陰極114具有嵌槽114d,而固定件113具有卡掣凸部113a(在此因視角緣故而僅繪示其中一側的卡掣凸部,然其可對應嵌槽114a的數量且不因此而受限),因而藉由卡掣凸部113a卡合於嵌槽114d的結構搭配,而讓陰極114得以穿設並固定於固定件113中,進而再藉由將固定件113組合於箱體120而使固定件113與陰極114能結合在箱體120的同一側部。燈絲裝置件111具有兩個鉗臂111a、111b,分別夾持在燈絲112的相對兩端,以藉此讓燈絲112能伸入於容置槽114a內。As shown in FIG. 2, the cathode 114 is actually assembled to the case 120 by being embedded in the fixing member 113. Further, the cathode 114 has a recessed groove 114d, and the fixing member 113 has a latching projection 113a (only one of the latching projections on one side is shown here because of the viewing angle, but it can correspond to the number of the recessed grooves 114a and Therefore, it is not limited thereby, so that the cathode 114 can be pierced and fixed in the fixing member 113 by the structure of the latching portion 113a being engaged with the recessed groove 114d, and then the fixing member 113 can be combined by The case 120 allows the fixing member 113 and the cathode 114 to be coupled to the same side of the case 120. The filament device member 111 has two caliper arms 111a, 111b that are respectively clamped at opposite ends of the filament 112 to thereby allow the filament 112 to protrude into the accommodating groove 114a.
據此,燈絲112配置於容置槽114a內的部分,用以加熱陰極114且使陰極114發射出多個熱電子,並與氣體產生器130灌入於箱體120的內部空間SP的反應氣體gas相互作用而產生多個離子,這些離子會經由萃取孔12a而被萃取出箱體120。Accordingly, the filament 112 is disposed in a portion of the accommodating groove 114a for heating the cathode 114 and causing the cathode 114 to emit a plurality of hot electrons, and is injected into the internal space SP of the tank 120 with the gas generator 130. The gas interacts to generate a plurality of ions which are extracted out of the tank 120 via the extraction holes 12a.
如圖3所示,燈絲112具有第一弧形部C1、第二弧形部C2與第三弧形部C3,其中第一弧形部C1連接在第二弧形部C2與第三弧形部C3之間,且同位於Y-Z平面,並由於第一弧形部C1的開口朝向相對於第二弧形部C2的開口朝向與第三弧形部C3的開口朝向,而使第一弧形部C1、第二弧形部C2與第三弧形部C3形成所示馬蹄狀的同平面結構。As shown in FIG. 3, the filament 112 has a first curved portion C1, a second curved portion C2 and a third curved portion C3, wherein the first curved portion C1 is connected to the second curved portion C2 and the third curved portion. The portion C3 is located in the YZ plane, and the first arc is formed because the opening of the first curved portion C1 faces the opening with respect to the second curved portion C2 toward the opening of the third curved portion C3. The portion C1, the second curved portion C2 and the third curved portion C3 form a horseshoe-like in-plane structure.
值得注意的是,在本實施例中,如圖3所示,第一弧形部C1、第二弧形部C2與第三弧形部C3各具有對應的虛擬中心A1、A2與A3,而第二弧形部C2與第三弧形部C3彼此靠近而在第一弧形部C1的相對兩端處形成瓶頸,且因此讓第一弧形部C1呈(倒置的)「Ω」狀,其中第二弧形部C2的虛擬中心A2及第三弧形部C3的虛擬中心A3之間的直線距離為8mm±1mm。It should be noted that, in this embodiment, as shown in FIG. 3, the first curved portion C1, the second curved portion C2, and the third curved portion C3 each have corresponding virtual centers A1, A2, and A3, and The second curved portion C2 and the third curved portion C3 are close to each other to form a neck at the opposite ends of the first curved portion C1, and thus the first curved portion C1 is in an "inverted" "Ω" shape. The linear distance between the virtual center A2 of the second curved portion C2 and the virtual center A3 of the third curved portion C3 is 8 mm ± 1 mm.
進一步地說,第一弧形部C1的內徑尺寸會大於或等於第二弧形部C2的中央反曲點T1至第三弧形部C3的中央反曲點T2的相對距離。在此需先說明的是,所述中央反曲點係指位在該弧形部之弧長中心處的反曲點而言。舉例來說,在此以平行Z軸的直線Z1為參考,第一弧形部C1的內徑尺寸即相當於反曲點T3、T4之間的相對距離,也就是將其正投影至直線Z2上所產生的投影長度L2。另一方面,第二弧形部C2的中央反曲點T1正投影至直線Z1與第三弧形部C3的中央反曲點T2正投影至直線Z1的相對距離即為所示的投影長度L1。據此,投影長度L2≧投影長度L1,而在本實施例中,第一弧形部C1的內部尺寸(即投影長度L2)為6.6mm,而第二弧形部C2的中央反曲點T1至第三弧形部C3的中央反曲點T2的相對距離(即投影長度L1)為5.4mm。Further, the inner diameter of the first curved portion C1 may be greater than or equal to the relative distance from the central inflection point T1 of the second curved portion C2 to the central inflection point T2 of the third curved portion C3. It should be noted here that the central inflection point refers to the inflection point at the center of the arc length of the curved portion. For example, here, with reference to the straight line Z1 of the parallel Z axis, the inner diameter of the first curved portion C1 corresponds to the relative distance between the inflection points T3 and T4, that is, it is orthographically projected to the straight line Z2. The projection length L2 produced on it. On the other hand, the relative inversion of the central inflection point T1 of the second curved portion C2 to the straight line Z1 and the central inflection point T2 of the third curved portion C3 to the straight line Z1 is the projected length L1 as shown. . According to this, the projection length L2 ≧ projection length L1, and in the present embodiment, the inner dimension of the first curved portion C1 (ie, the projection length L2) is 6.6 mm, and the central inflection point T1 of the second curved portion C2 The relative distance (i.e., projection length L1) to the central inflection point T2 of the third curved portion C3 is 5.4 mm.
圖4是圖2的陰極的剖面圖,在此以X-Y平面為基準。請同時參考圖2至圖4,在本實施例中,陰極114還具有位於容置槽114a內的填角結構R1, 以當燈絲112被燈絲裝置件111的兩個鉗臂111a、111b夾住後而使第一弧形部C1、第二弧形部C2與第三弧形部C3伸入容置槽114a內時,前述第一弧形部C1、第二弧形部C2與第三弧形部C3會被填角結構R1所環繞。進一步地說,陰極114具有槽底114b與槽壁114c,填角結構R1實質上連接在槽底114b與槽壁114c之間。在此,第一弧形部C1、第二弧形部C2與第三弧形部C3被填角結構R 31所環繞的配置方式,正是讓槽壁114c的厚度能因填角結構R1而增加,以抵抗燈絲114在第一弧形部C1、第二弧形部C2與第三弧形部C3處因加熱及腐蝕所產生對陰極114的結構衝擊。在此,本實施例的填角結構R1實質上為半圓角,且其半徑為3mm。 4 is a cross-sectional view of the cathode of FIG. 2, based on the X-Y plane. Referring to FIG. 2 to FIG. 4 simultaneously, in the embodiment, the cathode 114 further has a fillet structure R1 located in the receiving groove 114a. When the filament 112 is clamped by the two caliper arms 111a, 111b of the filament device 111, the first curved portion C1, the second curved portion C2 and the third curved portion C3 are extended into the accommodating groove 114a. The first curved portion C1, the second curved portion C2 and the third curved portion C3 are surrounded by the fillet structure R1. Further, the cathode 114 has a groove bottom 114b and a groove wall 114c, and the fillet structure R1 is substantially connected between the groove bottom 114b and the groove wall 114c. Here, the first curved portion C1, the second curved portion C2, and the third curved portion C3 are filled with the corner structure R The surrounding configuration of 31 is such that the thickness of the groove wall 114c can be increased by the fillet structure R1 to resist the filament 114 at the first curved portion C1, the second curved portion C2 and the third curved portion C3. The structural impact on the cathode 114 due to heating and corrosion. Here, the fillet structure R1 of the present embodiment is substantially semi-rounded and has a radius of 3 mm.
綜上所述,在本新型創作的上述實施例中,陰極模組藉由改變燈絲的輪廓而影響其在陰極內的配置方式,同時陰極在燈絲的弧形部搭配填角結構,因而得以降低陰極因燈絲加熱所對其產生的溫度與腐蝕衝擊,且因此提高陰極1.4倍的使用壽命。In summary, in the above embodiment of the novel creation, the cathode module affects its arrangement in the cathode by changing the contour of the filament, and the cathode is matched with the fillet structure in the curved portion of the filament, thereby being reduced. The temperature and corrosion shock generated by the cathode due to the heating of the filament, and thus the life of the cathode 1.4 times.
進一步地說,在燈絲結構中,藉由第二弧形部與第三弧形部朝向第一弧形部所在位置集中靠近,而在第一弧形部的相對兩端處形成瓶頸,藉以遠離陰極的槽壁,此舉不但讓陰極的側壁免於遭受燈絲所產生熱電子的直接轟擊而得以具有較長的使用壽命外,也讓作為陰極熱源的燈絲能因所述弧形部的配置位置而產生熱源集中的效果,進而提高離子源的電漿產生效率。Further, in the filament structure, the second curved portion and the third curved portion are concentrated toward the position of the first curved portion, and a bottleneck is formed at opposite ends of the first curved portion, thereby being far away The groove wall of the cathode, which not only allows the side wall of the cathode to be subjected to direct bombardment by the hot electrons generated by the filament to have a long service life, but also allows the filament as the cathode heat source to be disposed due to the arc portion The effect of heat source concentration is generated, thereby increasing the plasma generation efficiency of the ion source.
雖然本新型創作已以實施例揭露如上,然其並非用以限定本新型創作,任何所屬技術領域中具有通常知識者,在不脫離本新型創作的精神和範圍內,當可作些許的更動與潤飾,故本新型創作的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the novel creation, and any person skilled in the art can make some changes without departing from the spirit and scope of the novel creation. Retouching, the scope of protection of this new creation is subject to the definition of the scope of the patent application attached.
100‧‧‧離子源
110‧‧‧陰極模組
111‧‧‧燈絲裝置件
111a、111b‧‧‧鉗臂
112‧‧‧燈絲
113‧‧‧固定件
113a‧‧‧卡掣凸部
114‧‧‧陰極
114a‧‧‧容置槽
114b‧‧‧槽底
114c‧‧‧槽壁
114d‧‧‧嵌槽
120‧‧‧箱體
122‧‧‧萃取孔
124‧‧‧貫孔
130‧‧‧氣體產生器
A1、A2、A3‧‧‧虛擬中心
C1‧‧‧第一弧形部
C2‧‧‧第二弧形部
C3‧‧‧第三弧形部
L1、L2‧‧‧投影長度
R1‧‧‧填角結構
SP‧‧‧內部空間
T1、T2‧‧‧中央反曲點
T3、T4‧‧‧反曲點
Z1‧‧‧直線
gas‧‧‧反應氣體
X-Y-Z‧‧‧直角座標100‧‧‧Ion source
110‧‧‧ Cathode Module
111‧‧‧Film device
111a, 111b‧‧‧ clamp arm
112‧‧‧filament
113‧‧‧Fixed parts
113a‧‧‧Carmen convex
114‧‧‧ cathode
114a‧‧‧ accommodating slots
114b‧‧‧ bottom
114c‧‧‧ slot wall
114d‧‧‧ slotted
120‧‧‧ cabinet
122‧‧‧ extraction holes
124‧‧‧through holes
130‧‧‧ gas generator
A1, A2, A3‧‧‧ Virtual Center
C1‧‧‧First curved part
C2‧‧‧Second curved part
C3‧‧‧ Third curved part
L1, L2‧‧‧ projection length
R1‧‧‧ fillet structure
SP‧‧‧Internal space
T1, T2‧‧‧ Central recurve points
T3, T4‧‧‧ recurve points
Z1‧‧‧ Straight line
Gas‧‧‧reaction gas
XYZ‧‧‧right angle coordinates
圖1是依據本新型創作一實施例的一種離子源的示意圖。 圖2是圖1的離子源的爆炸圖。 圖3是圖2的燈絲的示意圖。 圖4是圖2的陰極的剖面圖。1 is a schematic illustration of an ion source in accordance with an embodiment of the present invention. 2 is an exploded view of the ion source of FIG. 1. Figure 3 is a schematic illustration of the filament of Figure 2. Figure 4 is a cross-sectional view of the cathode of Figure 2 .
112‧‧‧燈絲 112‧‧‧filament
A1、A2、A3‧‧‧虛擬中心 A1, A2, A3‧‧‧ Virtual Center
C1‧‧‧第一弧形部 C1‧‧‧First curved part
C2‧‧‧第二弧形部 C2‧‧‧Second curved part
C3‧‧‧第三弧形部 C3‧‧‧ Third curved part
L1、L2‧‧‧投影長度 L1, L2‧‧‧ projection length
T1、T2‧‧‧中央反曲點 T1, T2‧‧‧ Central recurve points
T3、T4‧‧‧反曲點 T3, T4‧‧‧ recurve points
Z1‧‧‧直線 Z1‧‧‧ Straight line
X-Y-Z‧‧‧直角座標 X-Y-Z‧‧‧right angle coordinates
Claims (12)
Priority Applications (1)
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TW105201671U TWM521259U (en) | 2016-02-02 | 2016-02-02 | Cathode module |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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TW105201671U TWM521259U (en) | 2016-02-02 | 2016-02-02 | Cathode module |
Publications (1)
Publication Number | Publication Date |
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TWM521259U true TWM521259U (en) | 2016-05-01 |
Family
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Application Number | Title | Priority Date | Filing Date |
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2016
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